Продукція > GUANGDONG INMARK ELECTRONICS CO., LTD. > Всі товари виробника GUANGDONG INMARK ELECTRONICS CO., LTD. (303) > Сторінка 3 з 6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| MBR60150A | Guangdong Inmark Electronics Co., Ltd. | Description: DIODE ARR SCHOTT 150V 60A TO-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MBR60150F | Guangdong Inmark Electronics Co., Ltd. | Description: DIODE ARR SCHOTT 150V 60A TO-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR60200A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 200V 60A TO-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MBR60200F | Guangdong Inmark Electronics Co., Ltd. | Description: DIODE ARR SCHOTT 200V 60A TO-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR6045A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 60A TO-220Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-220 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MBR6045F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 45V 60A TO-220F Packaging: Tube Mounting Type: Through Hole Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-220F Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR6060A | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 60A TO-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MBR6060F | Guangdong Inmark Electronics Co., Ltd. |
Description: DIODE ARR SCHOTT 60V 60A TO-220F |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MJE15032 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 250V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 50 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MJE15033 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 250V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 50 W |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MMBT2907 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 60V 600MA SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBT3906 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 40V 200MA SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBT5401 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS PNP 150V 600MA SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MMBT5551 | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 160V 600MA SOT-23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MOT100N03MC | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 100A 3.4m To-25 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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MOT100N03MD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 100A 3.4m To-25Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT100N07D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 70V 100A 5.2m To-25 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT10N65D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 10A 0.88 To252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT10N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 10A 0.67 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT10N80HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 10A 1.4 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V Power Dissipation (Max): 60W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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MOT110N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 110A 3.5m To-25 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT1112T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 400A 0.85m TollPackaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 347W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V |
на замовлення 1980 шт: термін постачання 21-31 дні (днів) |
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MOT1113T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 399A 0.9m Toll-Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 399A Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 375W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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MOT1113T4 | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 399A 1.1m ToltPackaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 399A Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 455W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLT Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MOT120N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 120A 3m To-252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT120N10A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT120N10D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT120N10E | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2Packaging: Tape & Reel (TR) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MOT12N65A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 145W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT12N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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MOT12N65T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.62m Toll-Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Power Dissipation (Max): 208W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MOT12N70HF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 700V 12A 0.8 To220F |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT12N80HSF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 12A 1.3 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V Power Dissipation (Max): 41W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13005DA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 4A To-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT13005DF | Guangdong Inmark Electronics Co., Ltd. | Description: TRANS NPN 700V 4A To-220F |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13007MA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT13007MF | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220FPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 36 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT13009DA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13009DF | Guangdong Inmark Electronics Co., Ltd. | Description: TRANS NPN 700V 12A To-220F |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13009DW | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-247SPackaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Current - Collector Cutoff (Max): 1mA Frequency - Transition: 4MHz Supplier Device Package: TO-247S Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MOT130N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 130A 2.3m To-25Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT13N50A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 39W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT13N50SF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.51 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V Power Dissipation (Max): 48W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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| MOT150N03A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 150A 3.9m To-22 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT150N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 150A 1.5m To-25Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 83W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT150N10A | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 100V 150A 3.4m To-2 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT15N10C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 15A 80m To-251Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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MOT15N10D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 15A 80m To-252Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT15N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 15A 0.4 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT16N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 16A 0.3 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT16N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 16A 0.47 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V Power Dissipation (Max): 60W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT180N10A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 180A 3m To-220 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 260W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT180N10E | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 180A 3m To-263Packaging: Tape & Reel (TR) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 260W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MOT18N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 18A 0.27 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT18N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 18A 0.35 To220FPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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MOT20N03BD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 2A 8.8m To-252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT20N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 2A 9.7m To-252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT20N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 20A 0.19 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 45W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT20N50W | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 20A 0.19 To247sPackaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 260W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| MBR60150A |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 150V 60A TO-220
Description: DIODE ARR SCHOTT 150V 60A TO-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.92 грн |
| 10+ | 107.35 грн |
| 100+ | 64.42 грн |
| 500+ | 42.31 грн |
| 1000+ | 35.96 грн |
| MBR60150F |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 150V 60A TO-220
Description: DIODE ARR SCHOTT 150V 60A TO-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.26 грн |
| 10+ | 100.49 грн |
| 100+ | 60.29 грн |
| 500+ | 39.61 грн |
| 1000+ | 33.67 грн |
| MBR60200A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 60A TO-220
Description: DIODE ARR SCHOTT 200V 60A TO-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 187.51 грн |
| 10+ | 108.49 грн |
| 100+ | 65.09 грн |
| 500+ | 42.76 грн |
| 1000+ | 36.35 грн |
| MBR60200F |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 200V 60A TO-220
Description: DIODE ARR SCHOTT 200V 60A TO-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.59 грн |
| 10+ | 103.92 грн |
| 100+ | 62.35 грн |
| 500+ | 40.96 грн |
| 1000+ | 34.82 грн |
| MBR6045A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 60A TO-220
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 181.97 грн |
| 10+ | 105.06 грн |
| 100+ | 63.04 грн |
| 500+ | 41.41 грн |
| 1000+ | 35.20 грн |
| MBR6045F |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 45V 60A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Description: DIODE ARR SCHOTT 45V 60A TO-220F
Packaging: Tube
Mounting Type: Through Hole
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 0.62 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.26 грн |
| 10+ | 100.49 грн |
| 100+ | 60.29 грн |
| 500+ | 39.61 грн |
| 1000+ | 33.67 грн |
| MBR6060A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 60A TO-220
Description: DIODE ARR SCHOTT 60V 60A TO-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.39 грн |
| 10+ | 103.99 грн |
| 100+ | 62.39 грн |
| 500+ | 40.99 грн |
| 1000+ | 34.84 грн |
| MBR6060F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: DIODE ARR SCHOTT 60V 60A TO-220F
Description: DIODE ARR SCHOTT 60V 60A TO-220F
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 170.10 грн |
| 10+ | 98.43 грн |
| 100+ | 59.04 грн |
| 500+ | 38.78 грн |
| 1000+ | 32.96 грн |
| MJE15032 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
Description: TRANS NPN 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.17 грн |
| 10+ | 73.75 грн |
| 100+ | 44.28 грн |
| 500+ | 29.09 грн |
| 1000+ | 24.72 грн |
| MJE15033 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
Description: TRANS PNP 250V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.17 грн |
| 10+ | 73.75 грн |
| 100+ | 44.28 грн |
| 500+ | 29.09 грн |
| 1000+ | 24.72 грн |
| MMBT2907 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 60V 600MA SOT-23
Description: TRANS PNP 60V 600MA SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 67+ | 4.75 грн |
| 118+ | 2.59 грн |
| 197+ | 1.55 грн |
| 500+ | 1.02 грн |
| 1000+ | 0.87 грн |
| 3000+ | 0.74 грн |
| MMBT3906 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 40V 200MA SOT-23
Description: TRANS PNP 40V 200MA SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 134+ | 2009.00 грн |
| 182+ | 202.34 грн |
| 306+ | 21.06 грн |
| 500+ | 4.67 грн |
| 1000+ | 2.57 грн |
| 3000+ | 1.14 грн |
| MMBT5401 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS PNP 150V 600MA SOT-23
Description: TRANS PNP 150V 600MA SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 3.96 грн |
| 134+ | 2.29 грн |
| 223+ | 1.37 грн |
| 500+ | 0.90 грн |
| 1000+ | 0.76 грн |
| 3000+ | 0.65 грн |
| MMBT5551 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 160V 600MA SOT-23
Description: TRANS NPN 160V 600MA SOT-23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 3.96 грн |
| 134+ | 2.29 грн |
| 223+ | 1.37 грн |
| 500+ | 0.90 грн |
| 1000+ | 0.76 грн |
| 3000+ | 0.65 грн |
| MOT100N03MC |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.80 грн |
| 10+ | 31.31 грн |
| 100+ | 18.79 грн |
| 500+ | 12.34 грн |
| 1000+ | 10.49 грн |
| 4200+ | 8.92 грн |
| MOT100N03MD |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: MOSFET N-CH 30V 100A 3.4m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.60 грн |
| 11+ | 27.96 грн |
| 100+ | 16.77 грн |
| 500+ | 11.02 грн |
| 1000+ | 9.36 грн |
| 2500+ | 7.96 грн |
| MOT100N07D |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 70V 100A 5.2m To-25
Description: MOSFET N-CH 70V 100A 5.2m To-25
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 73.58 грн |
| 10+ | 42.44 грн |
| 100+ | 25.49 грн |
| 500+ | 16.75 грн |
| 1000+ | 14.23 грн |
| 2500+ | 12.10 грн |
| MOT10N65D |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.88 To252
Description: MOSFET N-CH 650V 10A 0.88 To252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 144.78 грн |
| 10+ | 83.88 грн |
| 100+ | 50.31 грн |
| 500+ | 33.05 грн |
| 1000+ | 28.10 грн |
| 2500+ | 23.88 грн |
| MOT10N65F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 650V 10A 0.67 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.07 грн |
| 10+ | 89.44 грн |
| 100+ | 53.67 грн |
| 500+ | 35.26 грн |
| 1000+ | 29.97 грн |
| MOT10N80HF |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 800V 10A 1.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 5A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 349.69 грн |
| 10+ | 202.05 грн |
| 100+ | 121.21 грн |
| 500+ | 79.63 грн |
| MOT110N03D |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 110A 3.5m To-25
Description: MOSFET N-CH 30V 110A 3.5m To-25
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.55 грн |
| 10+ | 33.52 грн |
| 100+ | 20.14 грн |
| 500+ | 13.23 грн |
| 1000+ | 11.25 грн |
| 2500+ | 9.56 грн |
| MOT1112T |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 400A 0.85m Toll
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 347W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V
Description: MOSFET N-CH 100V 400A 0.85m Toll
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 347W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 208 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15793 pF @ 20 V
на замовлення 1980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 749.23 грн |
| 10+ | 432.89 грн |
| 100+ | 259.74 грн |
| 500+ | 170.63 грн |
| 1000+ | 145.04 грн |
| MOT1113T |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 537.99 грн |
| 10+ | 310.84 грн |
| 100+ | 186.48 грн |
| 500+ | 122.50 грн |
| 1000+ | 104.13 грн |
| MOT1113T4 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 671.70 грн |
| 10+ | 388.32 грн |
| 100+ | 232.97 грн |
| 500+ | 153.04 грн |
| 1000+ | 130.09 грн |
| 2000+ | 110.57 грн |
| MOT120N03D |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 120A 3m To-252
Description: MOSFET N-CH 30V 120A 3m To-252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.62 грн |
| 10+ | 40.23 грн |
| 100+ | 24.15 грн |
| 500+ | 15.87 грн |
| 1000+ | 13.49 грн |
| 2500+ | 11.46 грн |
| MOT120N10A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 209.66 грн |
| 10+ | 121.29 грн |
| 100+ | 72.76 грн |
| 500+ | 47.80 грн |
| 1000+ | 40.63 грн |
| MOT120N10D |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 229.44 грн |
| 10+ | 132.26 грн |
| 100+ | 79.38 грн |
| 500+ | 52.14 грн |
| 1000+ | 44.32 грн |
| 2500+ | 37.67 грн |
| MOT120N10E |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.11 грн |
| 10+ | 242.50 грн |
| 100+ | 145.52 грн |
| 500+ | 95.60 грн |
| 800+ | 81.26 грн |
| MOT12N65A |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.33 грн |
| 10+ | 117.40 грн |
| 100+ | 70.44 грн |
| 500+ | 46.27 грн |
| 1000+ | 39.33 грн |
| MOT12N65F |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.19 грн |
| 10+ | 93.94 грн |
| 100+ | 56.35 грн |
| 500+ | 37.02 грн |
| MOT12N65T |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 541.95 грн |
| 10+ | 313.05 грн |
| 100+ | 187.84 грн |
| 500+ | 123.40 грн |
| 1000+ | 104.89 грн |
| 2000+ | 89.15 грн |
| MOT12N70HF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 12A 0.8 To220F
Description: MOSFET N-CH 700V 12A 0.8 To220F
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.82 грн |
| 10+ | 123.04 грн |
| 100+ | 73.79 грн |
| 500+ | 48.48 грн |
| 1000+ | 41.21 грн |
| MOT12N80HSF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 372.64 грн |
| 10+ | 215.38 грн |
| 100+ | 129.20 грн |
| 500+ | 84.88 грн |
| 1000+ | 72.15 грн |
| MOT13005DA |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 4A To-220
Description: TRANS NPN 700V 4A To-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.52 грн |
| 10+ | 55.92 грн |
| 100+ | 33.54 грн |
| 500+ | 22.04 грн |
| 1000+ | 18.73 грн |
| MOT13005DF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 4A To-220F
Description: TRANS NPN 700V 4A To-220F
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.98 грн |
| 10+ | 52.57 грн |
| 100+ | 31.53 грн |
| 500+ | 20.71 грн |
| 1000+ | 17.61 грн |
| MOT13007MA |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
товару немає в наявності
В кошику
од. на суму грн.
| MOT13007MF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
товару немає в наявності
В кошику
од. на суму грн.
| MOT13009DA |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220
Description: TRANS NPN 700V 12A To-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.72 грн |
| 10+ | 65.98 грн |
| 100+ | 39.59 грн |
| 500+ | 26.00 грн |
| 1000+ | 22.10 грн |
| MOT13009DF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220F
Description: TRANS NPN 700V 12A To-220F
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 104.43 грн |
| 10+ | 60.42 грн |
| 100+ | 36.23 грн |
| 500+ | 23.80 грн |
| 1000+ | 20.23 грн |
| MOT13009DW |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.23 грн |
| 10+ | 91.73 грн |
| 100+ | 55.01 грн |
| 500+ | 36.14 грн |
| 1000+ | 30.72 грн |
| 3000+ | 26.11 грн |
| MOT130N03D |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 39.31 грн |
| 100+ | 23.60 грн |
| 500+ | 15.51 грн |
| 1000+ | 13.18 грн |
| 2500+ | 11.20 грн |
| MOT13N50A |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.33 грн |
| 10+ | 117.40 грн |
| 100+ | 70.44 грн |
| 500+ | 46.27 грн |
| 1000+ | 39.33 грн |
| MOT13N50HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.33 грн |
| 10+ | 117.40 грн |
| 100+ | 70.44 грн |
| 500+ | 46.27 грн |
| 1000+ | 39.33 грн |
| MOT13N50SF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.20 грн |
| 10+ | 82.74 грн |
| 100+ | 49.64 грн |
| 500+ | 32.61 грн |
| MOT150N03A |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.81 грн |
| 10+ | 92.57 грн |
| 100+ | 55.50 грн |
| 500+ | 36.46 грн |
| 1000+ | 30.99 грн |
| MOT150N03D |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.98 грн |
| 10+ | 52.57 грн |
| 100+ | 31.52 грн |
| 500+ | 20.71 грн |
| 1000+ | 17.60 грн |
| 2500+ | 14.96 грн |
| MOT150N10A |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 150A 3.4m To-2
Description: MOSFET N-CH 100V 150A 3.4m To-2
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 329.12 грн |
| 10+ | 190.08 грн |
| 100+ | 114.05 грн |
| 500+ | 74.92 грн |
| 1000+ | 63.68 грн |
| MOT15N10C |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 15A 80m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.26 грн |
| 11+ | 27.96 грн |
| 100+ | 16.77 грн |
| 500+ | 11.02 грн |
| 1000+ | 9.36 грн |
| 4200+ | 7.96 грн |
| MOT15N10D |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.26 грн |
| 11+ | 27.96 грн |
| 100+ | 16.77 грн |
| 500+ | 11.02 грн |
| 1000+ | 9.36 грн |
| 2500+ | 7.96 грн |
| MOT15N50HF |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 15A 0.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 500V 15A 0.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.82 грн |
| 10+ | 123.04 грн |
| 100+ | 73.79 грн |
| 500+ | 48.48 грн |
| 1000+ | 41.21 грн |
| MOT16N50HF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.65 грн |
| 10+ | 132.49 грн |
| 100+ | 79.48 грн |
| 500+ | 52.21 грн |
| 1000+ | 44.38 грн |
| MOT16N65HF |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 217.57 грн |
| 10+ | 125.63 грн |
| 100+ | 75.37 грн |
| 500+ | 49.51 грн |
| 1000+ | 42.09 грн |
| MOT180N10A |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
Description: MOSFET N-CH 100V 180A 3m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 376.59 грн |
| 10+ | 217.51 грн |
| 100+ | 130.50 грн |
| 500+ | 85.73 грн |
| 1000+ | 72.87 грн |
| MOT180N10E |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-263
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
Description: MOSFET N-CH 100V 180A 3m To-263
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 911.42 грн |
| 10+ | 526.60 грн |
| 100+ | 315.95 грн |
| 500+ | 207.55 грн |
| 800+ | 176.42 грн |
| MOT18N50HF |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.18 грн |
| 10+ | 135.31 грн |
| 100+ | 81.18 грн |
| 500+ | 53.33 грн |
| 1000+ | 45.33 грн |
| MOT18N65HF |
![]() |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 253.17 грн |
| 10+ | 146.51 грн |
| 100+ | 87.88 грн |
| 500+ | 57.73 грн |
| MOT20N03BD |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 2A 8.8m To-252
Description: MOSFET N-CH 30V 2A 8.8m To-252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.77 грн |
| 14+ | 22.40 грн |
| 100+ | 13.42 грн |
| 500+ | 8.81 грн |
| 1000+ | 7.49 грн |
| 2500+ | 6.37 грн |
| MOT20N03D |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 2A 9.7m To-252
Description: MOSFET N-CH 30V 2A 9.7m To-252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.39 грн |
| 15+ | 21.26 грн |
| 100+ | 12.75 грн |
| 500+ | 8.37 грн |
| 1000+ | 7.12 грн |
| 2500+ | 6.05 грн |
| MOT20N50HF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.04 грн |
| 10+ | 153.21 грн |
| 100+ | 91.90 грн |
| 500+ | 60.38 грн |
| 1000+ | 51.32 грн |
| MOT20N50W |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 386.88 грн |
| 10+ | 223.68 грн |
| 100+ | 134.17 грн |
| 600+ | 88.14 грн |











