Продукція > GUANGDONG INMARK ELECTRONICS CO., LTD. > Всі товари виробника GUANGDONG INMARK ELECTRONICS CO., LTD. (226) > Сторінка 3 з 4
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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MOT1113T | Guangdong Inmark Electronics Co., Ltd. |
 Description: MOSFET N-CH 100V 399A 0.9m Toll-Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 399A Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V Power Dissipation (Max): 375W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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MOT1113T4 | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 399A 1.1m Tolt Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 399A Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 455W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLT Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MOT120N10A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2 Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT120N10D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Power Dissipation (Max): 150W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT120N10E | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 120A 4.3m To-2 Packaging: Tape & Reel (TR) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MOT12N65A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 145W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT12N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.56 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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MOT12N65T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 12A 0.62m Toll- Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Power Dissipation (Max): 208W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MOT12N80HSF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 800V 12A 1.3 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V Power Dissipation (Max): 41W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13007MA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220 Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT13007MF | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 8A To-220F Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V Frequency - Transition: 14MHz Supplier Device Package: TO-220FP Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 36 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MOT13009DA | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13009DF | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-220F |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13009DW | Guangdong Inmark Electronics Co., Ltd. |
Description: TRANS NPN 700V 12A To-247S Packaging: Tube Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Current - Collector Cutoff (Max): 1mA Frequency - Transition: 4MHz Supplier Device Package: TO-247S Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 80 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MOT130N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 130A 2.3m To-25 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 88W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT13N50A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT13N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.39 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V Power Dissipation (Max): 39W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT13N50SF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 13A 0.51 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V Power Dissipation (Max): 48W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
на замовлення 990 шт: термін постачання 21-31 дні (днів) |
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| MOT150N03A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 150A 3.9m To-22 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 130W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT150N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 150A 1.5m To-25 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 83W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT15N10C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 15A 80m To-251 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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MOT15N10D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 15A 80m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT15N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 15A 0.4 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT16N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 16A 0.3 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT16N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 16A 0.47 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V Power Dissipation (Max): 60W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT180N10A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 180A 3m To-220 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 260W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT180N10E | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 180A 3m To-263 Packaging: Tape & Reel (TR) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 260W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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MOT18N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 18A 0.27 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V Power Dissipation (Max): 42W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT18N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 18A 0.35 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
на замовлення 900 шт: термін постачання 21-31 дні (днів) |
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| MOT20N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 20A 0.19 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 45W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT20N50W | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 20A 0.19 To247s Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V Power Dissipation (Max): 260W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MOT22N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 22A 0.35 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 42mOhm @ 11A, 10V Power Dissipation (Max): 52W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT2305AB2 | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET P-CH 20V 6A SOT23 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| MOT2310B2 | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 60V 3A SOT23 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| MOT25N50N | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 25A 0.2 To247 Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V Power Dissipation (Max): 300W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MOT25N50W | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 25A 0.21 To247s Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V Power Dissipation (Max): 297W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MOT2620J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N+P-CH 20V 20A 9m PDFN3x Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 13W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-PDFN (3x3) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MOT28N50HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 28A 0.20 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V Power Dissipation (Max): 55W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT28N50Q | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 500V 28A 0.2 To3PB Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V Power Dissipation (Max): 312.5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PB Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MOT28N60HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 600V 28A 0.24 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT2N65A | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 2A 2.9 To220 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT30N06D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 30A 20m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 938 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT30N10BD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 100V 30A 32m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Power Dissipation (Max): 54W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT3400AB2 | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 5.8A SOT23 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23 Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MOT3728J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 30V 10A 25m PDFN3x3 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Power Dissipation (Max): 20W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3x3) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 821 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MOT3N150V | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 1500V 3A 6 To3PF Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 8.2Ohm @ 1.5A, 10V Power Dissipation (Max): 90W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3PF Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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MOT4618D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N+P-CH 40V 28A/-25A 16m Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 20V Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT4733J | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET P-CH 40V 15A 33m PDFN3x3 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 4.5V Power Dissipation (Max): 25W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3x3) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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MOT4N65C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 2.3 To251 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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| MOT4N65D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 2.3 To252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| MOT4N65F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 2.3 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| MOT4N65T | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 4A 2.4m Toll-8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MOT4N70D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 4A 3 To252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT4N70F | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 700V 4A 3 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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MOT50N03BD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 50A 7.3m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT50N03C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 50A 7.3m To-251 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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MOT50N03D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 30V 50A 7.3m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Power Dissipation (Max): 40W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MOT50N04D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 40V 50A 8m To-252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| MOT50N06C | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 50A 13m To-251 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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MOT50N06D | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 60V 50A 13m To-252 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Power Dissipation (Max): 75W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| MOT1113T |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
Description: MOSFET N-CH 100V 399A 0.9m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Power Dissipation (Max): 375W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 50 V
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 525.76 грн |
| 10+ | 303.77 грн |
| 100+ | 182.24 грн |
| 500+ | 119.72 грн |
| 1000+ | 101.76 грн |
| MOT1113T4 |
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Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
Description: MOSFET N-CH 100V 399A 1.1m Tolt
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 399A
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 455W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLT
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13574 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 637.88 грн |
| 10+ | 368.85 грн |
| 100+ | 221.29 грн |
| 500+ | 145.37 грн |
| 1000+ | 123.57 грн |
| 2000+ | 105.03 грн |
| MOT120N10A |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 204.89 грн |
| 10+ | 118.53 грн |
| 100+ | 71.10 грн |
| 500+ | 46.71 грн |
| 1000+ | 39.71 грн |
| MOT120N10D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Power Dissipation (Max): 150W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4646 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.22 грн |
| 10+ | 129.25 грн |
| 100+ | 77.57 грн |
| 500+ | 50.96 грн |
| 1000+ | 43.31 грн |
| 2500+ | 36.82 грн |
| MOT120N10E |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 100V 120A 4.3m To-2
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 410.56 грн |
| 10+ | 236.99 грн |
| 100+ | 142.22 грн |
| 500+ | 93.42 грн |
| 800+ | 79.41 грн |
| MOT12N65A |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.56 To220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 145W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.35 грн |
| 10+ | 117.49 грн |
| 100+ | 70.48 грн |
| 500+ | 46.30 грн |
| 1000+ | 39.36 грн |
| MOT12N65F |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.56 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.37 грн |
| 10+ | 93.96 грн |
| 100+ | 56.38 грн |
| 500+ | 37.04 грн |
| MOT12N65T |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 650V 12A 0.62m Toll-
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V
Power Dissipation (Max): 208W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 542.00 грн |
| 10+ | 313.23 грн |
| 100+ | 187.95 грн |
| 500+ | 123.47 грн |
| 1000+ | 104.95 грн |
| 2000+ | 89.21 грн |
| MOT12N80HSF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 800V 12A 1.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 6A, 10V
Power Dissipation (Max): 41W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 364.17 грн |
| 10+ | 210.48 грн |
| 100+ | 126.27 грн |
| 500+ | 82.95 грн |
| 1000+ | 70.51 грн |
| MOT13007MA |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 8A To-220
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
товару немає в наявності
В кошику
од. на суму грн.
| MOT13007MF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
Description: TRANS NPN 700V 8A To-220F
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1A, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
товару немає в наявності
В кошику
од. на суму грн.
| MOT13009DA |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220
Description: TRANS NPN 700V 12A To-220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.11 грн |
| 10+ | 64.48 грн |
| 100+ | 38.71 грн |
| 500+ | 25.43 грн |
| 1000+ | 21.61 грн |
| MOT13009DF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-220F
Description: TRANS NPN 700V 12A To-220F
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.06 грн |
| 10+ | 59.04 грн |
| 100+ | 35.43 грн |
| 500+ | 23.27 грн |
| 1000+ | 19.78 грн |
| MOT13009DW |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
Description: TRANS NPN 700V 12A To-247S
Packaging: Tube
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Current - Collector Cutoff (Max): 1mA
Frequency - Transition: 4MHz
Supplier Device Package: TO-247S
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.50 грн |
| 10+ | 91.73 грн |
| 100+ | 55.04 грн |
| 500+ | 36.16 грн |
| 1000+ | 30.73 грн |
| 3000+ | 26.12 грн |
| MOT130N03D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
Description: MOSFET N-CH 30V 130A 2.3m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 88W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 12 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.49 грн |
| 10+ | 38.42 грн |
| 100+ | 23.07 грн |
| 500+ | 15.15 грн |
| 1000+ | 12.88 грн |
| 2500+ | 10.95 грн |
| MOT13N50A |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.35 грн |
| 10+ | 117.49 грн |
| 100+ | 70.48 грн |
| 500+ | 46.30 грн |
| 1000+ | 39.36 грн |
| MOT13N50HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.39 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 45mOhm @ 6.5A, 10V
Power Dissipation (Max): 39W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.35 грн |
| 10+ | 117.49 грн |
| 100+ | 70.48 грн |
| 500+ | 46.30 грн |
| 1000+ | 39.36 грн |
| MOT13N50SF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 500V 13A 0.51 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 55mOhm @ 6.5A, 10V
Power Dissipation (Max): 48W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.04 грн |
| 10+ | 82.79 грн |
| 100+ | 49.67 грн |
| 500+ | 32.63 грн |
| MOT150N03A |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
Description: MOSFET N-CH 30V 150A 3.9m To-22
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6297 pF @ 15 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 156.18 грн |
| 10+ | 90.61 грн |
| 100+ | 54.37 грн |
| 500+ | 35.72 грн |
| 1000+ | 30.36 грн |
| MOT150N03D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
Description: MOSFET N-CH 30V 150A 1.5m To-25
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 83W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.92 грн |
| 10+ | 51.52 грн |
| 100+ | 30.88 грн |
| 500+ | 20.28 грн |
| 1000+ | 17.24 грн |
| 2500+ | 14.66 грн |
| MOT15N10C |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 15A 80m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.39 грн |
| 11+ | 27.18 грн |
| 100+ | 16.27 грн |
| 500+ | 10.69 грн |
| 1000+ | 9.09 грн |
| 4200+ | 7.72 грн |
| MOT15N10D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Description: MOSFET N-CH 100V 15A 80m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.39 грн |
| 11+ | 27.18 грн |
| 100+ | 16.27 грн |
| 500+ | 10.69 грн |
| 1000+ | 9.09 грн |
| 2500+ | 7.72 грн |
| MOT15N50HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 15A 0.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Description: MOSFET N-CH 500V 15A 0.4 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 400mOhm @ 7.5A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.76 грн |
| 10+ | 120.84 грн |
| 100+ | 72.50 грн |
| 500+ | 47.63 грн |
| 1000+ | 40.48 грн |
| MOT16N50HF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 500V 16A 0.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 35mOhm @ 8A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.22 грн |
| 10+ | 129.77 грн |
| 100+ | 77.86 грн |
| 500+ | 51.15 грн |
| 1000+ | 43.48 грн |
| MOT16N65HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 650V 16A 0.47 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 55mOhm @ 8A, 10V
Power Dissipation (Max): 60W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.62 грн |
| 10+ | 123.07 грн |
| 100+ | 73.84 грн |
| 500+ | 48.50 грн |
| 1000+ | 41.23 грн |
| MOT180N10A |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
Description: MOSFET N-CH 100V 180A 3m To-220
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 361.08 грн |
| 10+ | 208.70 грн |
| 100+ | 125.23 грн |
| 500+ | 82.26 грн |
| 1000+ | 69.92 грн |
| MOT180N10E |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 180A 3m To-263
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
Description: MOSFET N-CH 100V 180A 3m To-263
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7470 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 874.47 грн |
| 10+ | 505.32 грн |
| 100+ | 303.16 грн |
| 500+ | 199.16 грн |
| 800+ | 169.28 грн |
| MOT18N50HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 500V 18A 0.27 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 42W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.27 грн |
| 10+ | 135.36 грн |
| 100+ | 81.22 грн |
| 500+ | 53.35 грн |
| 1000+ | 45.35 грн |
| MOT18N65HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.42 грн |
| 10+ | 143.25 грн |
| 100+ | 85.94 грн |
| 500+ | 56.46 грн |
| MOT20N50HF |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 500V 20A 0.19 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 45W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.20 грн |
| 10+ | 153.30 грн |
| 100+ | 91.96 грн |
| 500+ | 60.41 грн |
| 1000+ | 51.35 грн |
| MOT20N50W |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: MOSFET N-CH 500V 20A 0.19 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 24mOhm @ 10A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 386.59 грн |
| 10+ | 223.81 грн |
| 100+ | 134.24 грн |
| 600+ | 88.19 грн |
| MOT22N65HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 22A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 42mOhm @ 11A, 10V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 650V 22A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 42mOhm @ 11A, 10V
Power Dissipation (Max): 52W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 352.57 грн |
| 10+ | 203.63 грн |
| 100+ | 122.17 грн |
| 500+ | 80.26 грн |
| 1000+ | 68.22 грн |
| MOT2305AB2 |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 20V 6A SOT23
Description: MOSFET P-CH 20V 6A SOT23
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.60 грн |
| 44+ | 6.78 грн |
| 100+ | 4.06 грн |
| 500+ | 2.67 грн |
| 1000+ | 2.27 грн |
| 3000+ | 1.93 грн |
| MOT2310B2 |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 3A SOT23
Description: MOSFET N-CH 60V 3A SOT23
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.92 грн |
| 38+ | 8.04 грн |
| 100+ | 4.79 грн |
| 500+ | 3.15 грн |
| 1000+ | 2.68 грн |
| 3000+ | 2.28 грн |
| MOT25N50N |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Description: MOSFET N-CH 500V 25A 0.2 To247
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 5A, 10V
Power Dissipation (Max): 300W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 639.42 грн |
| 10+ | 369.15 грн |
| 100+ | 221.51 грн |
| 600+ | 145.51 грн |
| MOT25N50W |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
Description: MOSFET N-CH 500V 25A 0.21 To247s
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 24mOhm @ 12.5A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 30 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 542.00 грн |
| 10+ | 313.23 грн |
| 100+ | 187.95 грн |
| 600+ | 123.47 грн |
| MOT2620J |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 20V 20A 9m PDFN3x
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Description: MOSFET N+P-CH 20V 20A 9m PDFN3x
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 704pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.03 грн |
| 11+ | 29.63 грн |
| 100+ | 17.79 грн |
| 500+ | 11.69 грн |
| 1000+ | 9.94 грн |
| 5000+ | 8.45 грн |
| MOT28N50HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 28A 0.20 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 55W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Description: MOSFET N-CH 500V 28A 0.20 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 55W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 406.69 грн |
| 10+ | 234.90 грн |
| 100+ | 140.96 грн |
| 500+ | 92.60 грн |
| 1000+ | 78.71 грн |
| MOT28N50Q |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 500V 28A 0.2 To3PB
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 312.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PB
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Description: MOSFET N-CH 500V 28A 0.2 To3PB
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 312.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PB
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 600.76 грн |
| 10+ | 346.81 грн |
| 100+ | 208.09 грн |
| 600+ | 136.70 грн |
| MOT28N60HF |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 600V 28A 0.24 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Description: MOSFET N-CH 600V 28A 0.24 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 129mOhm @ 14A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 414.43 грн |
| 10+ | 239.74 грн |
| 100+ | 143.84 грн |
| 500+ | 94.49 грн |
| 1000+ | 80.32 грн |
| MOT2N65A |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 2A 2.9 To220
Description: MOSFET N-CH 650V 2A 2.9 To220
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.18 грн |
| 10+ | 46.98 грн |
| 100+ | 28.21 грн |
| 500+ | 18.53 грн |
| 1000+ | 15.75 грн |
| MOT30N06D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 30A 20m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 938 pF @ 20 V
Description: MOSFET N-CH 60V 30A 20m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 938 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.16 грн |
| 11+ | 27.47 грн |
| 100+ | 16.48 грн |
| 500+ | 10.82 грн |
| 1000+ | 9.20 грн |
| 2500+ | 7.82 грн |
| MOT30N10BD |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 100V 30A 32m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 54W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Description: MOSFET N-CH 100V 30A 32m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 54W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.00 грн |
| 10+ | 43.41 грн |
| 100+ | 26.03 грн |
| 500+ | 17.10 грн |
| 1000+ | 14.54 грн |
| 2500+ | 12.36 грн |
| MOT3400AB2 |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.37 грн |
| 43+ | 7.00 грн |
| 100+ | 4.21 грн |
| 500+ | 2.76 грн |
| 1000+ | 2.35 грн |
| 3000+ | 1.99 грн |
| MOT3728J |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 30V 10A 25m PDFN3x3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 20W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 821 pF @ 15 V
Description: MOSFET P-CH 30V 10A 25m PDFN3x3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 20W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 821 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.16 грн |
| 11+ | 27.40 грн |
| 100+ | 16.40 грн |
| 500+ | 10.77 грн |
| 1000+ | 9.16 грн |
| 5000+ | 7.78 грн |
| MOT3N150V |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 1500V 3A 6 To3PF
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 8.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3PF
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 1500V 3A 6 To3PF
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 8.2Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3PF
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 497.16 грн |
| 10+ | 287.62 грн |
| 100+ | 172.55 грн |
| 600+ | 113.35 грн |
| MOT4618D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N+P-CH 40V 28A/-25A 16m
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Description: MOSFET N+P-CH 40V 28A/-25A 16m
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 20V
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.69 грн |
| 10+ | 52.04 грн |
| 100+ | 31.24 грн |
| 500+ | 20.52 грн |
| 1000+ | 17.45 грн |
| 2500+ | 14.83 грн |
| MOT4733J |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET P-CH 40V 15A 33m PDFN3x3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 4.5V
Power Dissipation (Max): 25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 20 V
Description: MOSFET P-CH 40V 15A 33m PDFN3x3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 4.5V
Power Dissipation (Max): 25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (3x3)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.54 грн |
| 10+ | 34.77 грн |
| 100+ | 20.82 грн |
| 500+ | 13.68 грн |
| 1000+ | 11.63 грн |
| 5000+ | 9.88 грн |
| MOT4N65C |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 650V 4A 2.3 To251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.00 грн |
| 10+ | 43.63 грн |
| 100+ | 26.18 грн |
| 500+ | 17.20 грн |
| 1000+ | 14.62 грн |
| 4200+ | 12.43 грн |
| MOT4N65D |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 650V 4A 2.3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 75.00 грн |
| 10+ | 43.63 грн |
| 100+ | 26.18 грн |
| 500+ | 17.20 грн |
| 1000+ | 14.62 грн |
| 2500+ | 12.42 грн |
| MOT4N65F |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 650V 4A 2.3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.46 грн |
| 10+ | 52.56 грн |
| 100+ | 31.55 грн |
| 500+ | 20.72 грн |
| 1000+ | 17.62 грн |
| MOT4N65T |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 4A 2.4m Toll-8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Description: MOSFET N-CH 650V 4A 2.4m Toll-8
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 2A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.72 грн |
| 10+ | 167.75 грн |
| 100+ | 100.69 грн |
| 500+ | 66.14 грн |
| 1000+ | 56.22 грн |
| 2000+ | 47.79 грн |
| MOT4N70D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
Description: MOSFET N-CH 700V 4A 3 To252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.09 грн |
| 10+ | 45.27 грн |
| 100+ | 27.15 грн |
| 500+ | 17.84 грн |
| 1000+ | 15.16 грн |
| 2500+ | 12.89 грн |
| MOT4N70F |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
Description: MOSFET N-CH 700V 4A 3 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 93.56 грн |
| 10+ | 53.83 грн |
| 100+ | 32.32 грн |
| 500+ | 21.23 грн |
| 1000+ | 18.05 грн |
| MOT50N03BD |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.66 грн |
| 14+ | 22.41 грн |
| 100+ | 13.42 грн |
| 500+ | 8.82 грн |
| 1000+ | 7.50 грн |
| 2500+ | 6.37 грн |
| MOT50N03C |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V
Description: MOSFET N-CH 30V 50A 7.3m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 12 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.39 грн |
| 12+ | 26.80 грн |
| 100+ | 16.11 грн |
| 500+ | 10.58 грн |
| 1000+ | 9.00 грн |
| 4200+ | 7.65 грн |
| MOT50N03D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
Description: MOSFET N-CH 30V 50A 7.3m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 40W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.52 грн |
| 13+ | 24.57 грн |
| 100+ | 14.77 грн |
| 500+ | 9.70 грн |
| 1000+ | 8.25 грн |
| 2500+ | 7.01 грн |
| MOT50N04D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 40V 50A 8m To-252
Description: MOSFET N-CH 40V 50A 8m To-252
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 62.63 грн |
| 10+ | 36.11 грн |
| 100+ | 21.65 грн |
| 500+ | 14.22 грн |
| 1000+ | 12.09 грн |
| 2500+ | 10.28 грн |
| MOT50N06C |
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Description: MOSFET N-CH 60V 50A 13m To-251
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 61.85 грн |
| 10+ | 35.81 грн |
| 100+ | 21.48 грн |
| 500+ | 14.11 грн |
| 1000+ | 11.99 грн |
| 4200+ | 10.19 грн |
| MOT50N06D |
|
Виробник: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 60V 50A 13m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
Description: MOSFET N-CH 60V 50A 13m To-252
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 75W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.89 грн |
| 10+ | 32.46 грн |
| 100+ | 19.47 грн |
| 500+ | 12.79 грн |
| 1000+ | 10.87 грн |
| 2500+ | 9.24 грн |