Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126750) > Сторінка 150 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
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CY7C109BNL-15VC | Infineon Technologies |
 Description: IC SRAM 1MBIT PARALLEL 32SOJPackaging: Tube Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C026AV-25AC | Infineon Technologies |
Description: IC SRAM 256KBIT PARALLEL 100TQFP DigiKey Programmable: Not Verified Memory Organization: 16K x 16 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 100-TQFP (14x14) Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Bag |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C026AV-25AI | Infineon Technologies |
Description: IC SRAM 256KBIT PARALLEL 100TQFP DigiKey Programmable: Not Verified Memory Organization: 16K x 16 Access Time: 25 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 25ns Supplier Device Package: 100-TQFP (14x14) Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Bag |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C4271-15AC | Infineon Technologies |
Description: IC FIFO SYNC 32KX9 10NS 32TQFP Memory Size: 288K (32K x 9) Function: Synchronous Mounting Type: Surface Mount Package / Case: 32-TQFP Packaging: Bag DigiKey Programmable: Not Verified Voltage - Supply: 4.5 V ~ 5.5 V FWFT Support: No Retransmit Capability: No Programmable Flags Support: Yes Expansion Type: Depth, Width Bus Directional: Uni-Directional Supplier Device Package: 32-TQFP (7x7) Current - Supply (Max): 35mA Access Time: 10ns Data Rate: 66.7MHz Operating Temperature: 0°C ~ 70°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY8C24033-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 56SSOP DigiKey Programmable: Not Verified Number of I/O: 24 Supplier Device Package: 56-SSOP Peripherals: POR, PWM, WDT Connectivity: I2C, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Core Size: 8-Bit Data Converters: A/D 2x14b; D/A 2x9b Core Processor: M8C Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 256 x 8 Program Memory Size: 8KB (8K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 56-BSSOP (0.295", 7.50mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY2907FX14 | Infineon Technologies |
Description: IC CLOCK GENERATOR 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 130MHz Type: Clock Generator, Fanout Distribution Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 5.5V Ratio - Input:Output: 1:2 Differential - Input:Output: No/No Supplier Device Package: 14-SOIC PLL: Yes with Bypass Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY29948AC | Infineon Technologies |
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY29948AI | Infineon Technologies |
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY2DP818ZC | Infineon Technologies |
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP Packaging: Tube Package / Case: 38-TFSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVPECL Type: Fanout Buffer (Distribution) Input: LVDS, LVPECL, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:8 Differential - Input:Output: Yes/Yes Supplier Device Package: 38-TSSOP Frequency - Max: 350 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1328S-133AXI | Infineon Technologies | Description: IC SRAM 4.5MBIT PARALLEL 100TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1325S-100AXI | Infineon Technologies |
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.15V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Part Status: Obsolete Memory Interface: Parallel Access Time: 8 ns Memory Organization: 256K x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1324S-133AXC | Infineon Technologies | Description: IC SRAM 2MBIT PARALLEL 100TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1320SV18-250BZC | Infineon Technologies | Description: IC SRAM 18MBIT PAR 165FBGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1370SV25-167AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 100TQFP Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | ||||
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CY7C1414TV18-200BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGA Packaging: Bag Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 1M x 36 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1415TV18-200BZI | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 165FBGA Packaging: Bag Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1440SV33-167AXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 100TQFP Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1423TV18-267BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Bag Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 267 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 2M x 18 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1423TV18-267BZC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Bag Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 267 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 2M x 18 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1423SV18-250BZC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Bag Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Part Status: Obsolete Memory Interface: Parallel Memory Organization: 2M x 18 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1460SV25-167BZXI | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Packaging: Bag Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 1M x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C4275-15ASC | Infineon Technologies |
Description: IC FIFO SYNC 32KX18 10NS 64TQFP Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 576K (32K x 18) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 10ns Current - Supply (Max): 50mA Supplier Device Package: 64-TQFP (10x10) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: Yes FWFT Support: No Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| CY8C272434-24PVXI | Infineon Technologies |
Description: PROGRAMMABLE SYSTEM ON A CHIP DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| CY8C271434-24PXI | Infineon Technologies |
Description: PROGRAMMABLE SYSTEM ON A CHIP DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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CY8C24423A4-24SXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 28SOIC Packaging: Bag Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 10x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY8C24423A4-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 28SSOP Packaging: Bag Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 10x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY8C24423A4-24LTXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 32QFN Packaging: Bag Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 10x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 24 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY8C24123A4-24SXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 8SOIC Packaging: Bag Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 8-SOIC Number of I/O: 6 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| CY8C212234-24SXI | Infineon Technologies | Description: PROGRAMMABLE SYSTEM ON A CHIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| CY8C211234-24SXI | Infineon Technologies |
Description: PROGRAMMABLE SYSTEM ON A CHIP DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| CY8C203244-12LQXI | Infineon Technologies |
Description: PROGRAMMABLE SYSTEM ON A CHIP Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| CY8C202244-12LKXI | Infineon Technologies |
Description: IC MCU DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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CY7C1327S-166AXC | Infineon Technologies | Description: IC SRAM 4.5MBIT PARALLEL 100TQFP |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1347S-166BGC | Infineon Technologies |
Description: IC SRAM 4.5MBIT PAR 119PBGA Packaging: Tray Package / Case: 119-BGA Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.15V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 119-PBGA (14x22) Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||
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CY7C1360S-200BGC | Infineon Technologies |
Description: IC SRAM 9MBIT PARALLEL 119PBGA Packaging: Tray Package / Case: 119-BGA Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 119-PBGA (14x22) Memory Interface: Parallel Access Time: 3 ns Memory Organization: 256K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||
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CY7C1345S-100AXC | Infineon Technologies |
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.15V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Part Status: Active Memory Interface: Parallel Access Time: 8 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||
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CY7C63803-LQXC | Infineon Technologies |
Description: IC CONTROLLER USB 24QFN Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Function: Controller Interface: GPIO, SPI Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4V ~ 5.5V Current - Supply: 40mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-QFN (4x4) Part Status: Last Time Buy DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1360S-166AXC | Infineon Technologies |
Description: IC SRAM 9MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||
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CY7C185-15VI | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 28SOJ Packaging: Tube Package / Case: 28-BSOJ (0.300", 7.62mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOJ Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1370D-167AXCB | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFP Packaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1354SV25-166BZC | Infineon Technologies |
Description: IC SRAM 9MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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CY7C1325S-100AXC | Infineon Technologies |
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.15V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 100 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Part Status: Active Memory Interface: Parallel Access Time: 8 ns Memory Organization: 256K x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||
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CY7C1352S-133AXC | Infineon Technologies |
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x14) Memory Interface: Parallel Access Time: 4 ns Memory Organization: 256K x 18 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||
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IRFH5004TRPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 28A/100A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IRFH5015TRPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 10A/56A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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IRFH5020TRPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 5.1A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||
| IRFH5302DTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 29A/100A PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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IRFH5304TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 22A/79A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IRLH5030TRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 13A/100A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||
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IRLR8259PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 57A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
IRLML2060TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 1.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: Micro3™/SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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IRLR8256TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 81A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IRFH5004TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 40V 28A 8VQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IRFH5015TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 150V 10A 8VQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
IRFH5020TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 200V 5.1A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
IRFH5250DTR2PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 40A 8VQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
IRFH5255TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 15A 8VQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
IRFH5302DTR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 29A 8VQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: PQFN (5x6) Single Die Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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IRFH5304TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 22A 8VQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||
 |
IRLH5030TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 13A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. |
| CY7C109BNL-15VC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY7C026AV-25AC |
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Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bag
Description: IC SRAM 256KBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bag
товару немає в наявності
В кошику
од. на суму грн.
| CY7C026AV-25AI |
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bag
Description: IC SRAM 256KBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 100-TQFP (14x14)
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bag
товару немає в наявності
В кошику
од. на суму грн.
| CY7C4271-15AC |
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Виробник: Infineon Technologies
Description: IC FIFO SYNC 32KX9 10NS 32TQFP
Memory Size: 288K (32K x 9)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 32-TQFP
Packaging: Bag
DigiKey Programmable: Not Verified
Voltage - Supply: 4.5 V ~ 5.5 V
FWFT Support: No
Retransmit Capability: No
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-TQFP (7x7)
Current - Supply (Max): 35mA
Access Time: 10ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Description: IC FIFO SYNC 32KX9 10NS 32TQFP
Memory Size: 288K (32K x 9)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 32-TQFP
Packaging: Bag
DigiKey Programmable: Not Verified
Voltage - Supply: 4.5 V ~ 5.5 V
FWFT Support: No
Retransmit Capability: No
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 32-TQFP (7x7)
Current - Supply (Max): 35mA
Access Time: 10ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
товару немає в наявності
В кошику
од. на суму грн.
| CY8C24033-24PVXI |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 56SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 2x14b; D/A 2x9b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
Description: IC MCU 8BIT 8KB FLASH 56SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 2x14b; D/A 2x9b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 56-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| CY2907FX14 |
|
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 14-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 130MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 5.5V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 14-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
DigiKey Programmable: Not Verified
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В кошику
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| CY29948AC |
|
Виробник: Infineon Technologies
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
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| CY29948AI |
|
Виробник: Infineon Technologies
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
Description: IC CLK BUFFER 2:12 200MHZ 32TQFP
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В кошику
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| CY2DP818ZC |
|
Виробник: Infineon Technologies
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
Description: IC CLK BUFFER 1:8 350MHZ 38TSSOP
Packaging: Tube
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 38-TSSOP
Frequency - Max: 350 MHz
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В кошику
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| CY7C1328S-133AXI |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
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| CY7C1325S-100AXI |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
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| CY7C1324S-133AXC |
Виробник: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 100TQFP
Description: IC SRAM 2MBIT PARALLEL 100TQFP
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| CY7C1320SV18-250BZC |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Description: IC SRAM 18MBIT PAR 165FBGA
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В кошику
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| CY7C1370SV25-167AXC |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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| CY7C1414TV18-200BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 36
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 1M x 36
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| CY7C1415TV18-200BZI |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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| CY7C1440SV33-167AXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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| CY7C1423TV18-267BZXC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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| CY7C1423TV18-267BZC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 267 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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| CY7C1423SV18-250BZC |
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 18
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| CY7C1460SV25-167BZXI |
|
Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bag
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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| CY7C4275-15ASC |
|
Виробник: Infineon Technologies
Description: IC FIFO SYNC 32KX18 10NS 64TQFP
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 576K (32K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 50mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 32KX18 10NS 64TQFP
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 576K (32K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 50mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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| CY8C272434-24PVXI |
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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| CY8C271434-24PXI |
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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| CY8C24423A4-24SXI |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 28SOIC
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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| CY8C24423A4-24PVXI |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 28SSOP
Packaging: Bag
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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| CY8C24423A4-24LTXI |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Bag
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Bag
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
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| CY8C24123A4-24SXI |
|
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8SOIC
Packaging: Bag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 6
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 8SOIC
Packaging: Bag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-SOIC
Number of I/O: 6
DigiKey Programmable: Not Verified
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| CY8C212234-24SXI |
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
Description: PROGRAMMABLE SYSTEM ON A CHIP
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| CY8C211234-24SXI |
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
Description: PROGRAMMABLE SYSTEM ON A CHIP
DigiKey Programmable: Not Verified
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| CY8C203244-12LQXI |
Виробник: Infineon Technologies
Description: PROGRAMMABLE SYSTEM ON A CHIP
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: PROGRAMMABLE SYSTEM ON A CHIP
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| CY7C1327S-166AXC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
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| CY7C1347S-166BGC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PAR 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 840 шт
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| CY7C1360S-200BGC |
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 840 шт
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| CY7C1345S-100AXC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 720 шт
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| CY7C63803-LQXC |
|
Виробник: Infineon Technologies
Description: IC CONTROLLER USB 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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| CY7C1360S-166AXC |
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 720 шт
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| CY7C185-15VI |
|
Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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| CY7C1370D-167AXCB |
|
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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| CY7C1354SV25-166BZC |
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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| CY7C1325S-100AXC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Part Status: Active
Memory Interface: Parallel
Access Time: 8 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 720 шт
В кошику
од. на суму грн.
| CY7C1352S-133AXC |
Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 4 ns
Memory Organization: 256K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 720 шт
В кошику
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| IRFH5004TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 28A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
Description: MOSFET N-CH 40V 28A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
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| IRFH5015TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 10A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Description: MOSFET N-CH 150V 10A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 46.75 грн |
| IRFH5020TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
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| IRFH5302DTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Description: MOSFET N-CH 30V 29A/100A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
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од. на суму грн.
| IRFH5304TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Description: MOSFET N-CH 30V 22A/79A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
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од. на суму грн.
| IRLH5030TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
Description: MOSFET N-CH 100V 13A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| IRLR8259PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
Description: MOSFET N-CH 25V 57A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 21A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 13 V
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| IRLML2060TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
Description: MOSFET N-CH 60V 1.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Supplier Device Package: Micro3™/SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.67 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 64 pF @ 25 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.98 грн |
| 9000+ | 4.92 грн |
| IRLR8256TRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 81A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
Description: MOSFET N-CH 25V 81A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 25A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 13 V
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од. на суму грн.
| IRFH5004TR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 28A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
Description: MOSFET N-CH 40V 28A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 20 V
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| IRFH5015TR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 10A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Description: MOSFET N-CH 150V 10A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
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од. на суму грн.
| IRFH5020TR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
Description: MOSFET N-CH 200V 5.1A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
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В кошику
од. на суму грн.
| IRFH5250DTR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 40A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
Description: MOSFET N-CH 25V 40A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6115 pF @ 13 V
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В кошику
од. на суму грн.
| IRFH5255TR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 15A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
Description: MOSFET N-CH 25V 15A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 51A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 13 V
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В кошику
од. на суму грн.
| IRFH5302DTR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 29A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
Description: MOSFET N-CH 30V 29A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
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од. на суму грн.
| IRFH5304TR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 22A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
Description: MOSFET N-CH 30V 22A 8VQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 10 V
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В кошику
од. на суму грн.
| IRLH5030TR2PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
Description: MOSFET N-CH 100V 13A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.