Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122999) > Сторінка 149 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TLE7230GXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:8 PDSO-24Part Status: Obsolete Fault Protection: Open Load Detect, Over Temperature Supplier Device Package: PG-DSO-24-13 Ratio - Input:Output: 1:8 Current - Output (Max): 300mA Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 4.5V ~ 5.5V Rds On (Typ): 800mOhm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: SPI Number of Outputs: 8 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7230R | Infineon Technologies |
Description: IC SW SMART OCTAL LOWSIDE PDSO36 |
на замовлення 1539 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE7231GXUMA1 | Infineon Technologies |
Description: IC PWR DRIVER N-CHAN 1:4 DSO-14Part Status: Not For New Designs Fault Protection: Open Load Detect, Over Temperature Supplier Device Package: PG-DSO-14-1 Ratio - Input:Output: 1:4 Current - Output (Max): 320mA Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Voltage - Load: 4.5V ~ 5.5V Rds On (Typ): 1Ohm Output Configuration: Low Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: SPI Number of Outputs: 4 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 3440 шт: термін постачання 21-31 дні (днів) |
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TLE7232GXUMA1 | Infineon Technologies |
Description: IC SPI DRIVER RELAY CTRL PDSO-24 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7269GXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 2/2 DSO-14Part Status: Not For New Designs Duplex: Full Receiver Hysteresis: 300 mV Supplier Device Package: PG-DSO-14-24 Protocol: LINbus Data Rate: 20kBd Number of Drivers/Receivers: 2/2 Voltage - Supply: 7V ~ 27V Operating Temperature: -40°C ~ 150°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7270DNTMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 300MA TO252-5Part Status: Obsolete Control Features: Delay, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: PG-TO252-5-1 Number of Regulators: 1 Voltage - Input (Max): 42V Current - Quiescent (Iq): 30 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 300mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Packaging: Cut Tape (CT) Current - Supply (Max): 40 µA Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): 0.5V @ 200mA PSRR: 60dB (100Hz) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7368EXUMA1 | Infineon Technologies |
Description: IC PS SYSTEM MULTI VOLT PGDSO-36 |
на замовлення 1795 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE7368GNUMA1 | Infineon Technologies |
Description: IC REG AUTO APPL 3OUT PDSO36 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7469GV52AUMA1 | Infineon Technologies |
Description: IC REG LINEAR 2.6V/5V DSO-12Qualification: AEC-Q100 Grade: Automotive Protection Features: Over Current, Over Temperature, Short Circuit Voltage Dropout (Max): -, 0.6V @ 215mA PSRR: 60dB (100Hz), 60dB (100Hz) Part Status: Not For New Designs Control Features: Inhibit, Reset, Watchdog Voltage - Output (Min/Fixed): 2.6V, 5V Supplier Device Package: PG-DSO-12-11 Number of Regulators: 2 Voltage - Input (Max): 45V Current - Quiescent (Iq): 55 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 200mA, 215mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1009 шт: термін постачання 21-31 дні (днів) |
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TLE8102SGAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE8104EXT | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC750N10ND G | Infineon Technologies |
Description: MOSFET 2N-CH 100V 3.2A 8TDSON |
на замовлення 4431 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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IPB100N04S3-03 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A TO263-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB47N10S-33 | Infineon Technologies |
Description: MOSFET N-CH 100V 47A TO263-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISP772T | Infineon Technologies |
Description: IC SWITCH HISIDE SMART 8DSO |
на замовлення 6140 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE4253GS | Infineon Technologies |
Description: IC REG LDO ADJ 0.25A 8DSO |
на замовлення 1090 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE4254GA | Infineon Technologies |
Description: IC REG LDO ADJ 70MA 8DSO |
на замовлення 19025 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE4284DV18ATMA1 | Infineon Technologies |
Description: IC REG LDO 1.8V 1A TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4290D | Infineon Technologies |
Description: IC REG LDO 5V 0.4A TO252-5 |
на замовлення 4701 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE4294G V50 | Infineon Technologies |
Description: IC REG LDO 5V 30MA SCT595-5 |
на замовлення 5823 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE4675DATMA1 | Infineon Technologies |
Description: IC REG LDO 5V 0.4A TO252-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE6365G | Infineon Technologies |
Description: IC REG BUCK 5V 0.4A P8DSO |
на замовлення 6744 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE6389-3G V50 | Infineon Technologies |
Description: IC REG CTRLR BUCK 14DSO |
на замовлення 8955 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE7230G | Infineon Technologies |
Description: IC SW SMART OCTAL LOWSIDE PDSO24 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7230R | Infineon Technologies |
Description: IC SW SMART OCTAL LOWSIDE PDSO36 |
на замовлення 1539 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLE7232GXUMA1 | Infineon Technologies |
Description: IC SPI DRIVER RELAY CTRL PDSO-24 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE7368EXUMA1 | Infineon Technologies |
Description: IC PS SYSTEM MULTI VOLT PGDSO-36 |
на замовлення 1795 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BSZ042N04NS G | Infineon Technologies |
Description: MOSFET N-CH 40V 40A TSDSON-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS443P | Infineon Technologies |
Description: SWITCH HIGH SIDE POWER TO252-5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CYRF6936b-40LtXC | Infineon Technologies |
Description: IC RF TXRX ISM>1GHZ 40QFN Packaging: Tray Package / Case: 40-VFQFN Exposed Pad Sensitivity: -97dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx Only Operating Temperature: 0°C ~ 70°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 4dBm Current - Receiving: 21mA Data Rate (Max): 1Mbps Current - Transmitting: 21mA Supplier Device Package: 40-QFN (6x6) Modulation: DSSS, GFSK RF Family/Standard: General ISM > 1GHz Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSC067N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 15A/50A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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BSD316SNL6327XT | Infineon Technologies |
Description: MOSFET N-CH 30V 1.4A SOT363-6Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 3.7µA Supplier Device Package: PG-SOT363-PO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V |
на замовлення 732 шт: термін постачання 21-31 дні (днів) |
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BSL215PL6327HTSA1 | Infineon Technologies |
Description: MOSFET 2P-CH 20V 1.5A TSOP6-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 11µA Supplier Device Package: PG-TSOP6-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSL302SNL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 7.1A TSOP-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-TSOP6-6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSL306NL6327HTSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 11µA Supplier Device Package: PG-TSOP6-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSO033N03MSGXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 17A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V |
на замовлення 24288 шт: термін постачання 21-31 дні (днів) |
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BSO051N03MS G | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V |
на замовлення 2132 шт: термін постачання 21-31 дні (днів) |
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BSO080P03SNTMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 12.6A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V Power Dissipation (Max): 1.79W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSO083N03MSGXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V |
на замовлення 2056 шт: термін постачання 21-31 дні (днів) |
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BSZ440N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 5.3A/18A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 12µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V |
на замовлення 6182 шт: термін постачання 21-31 дні (днів) |
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BSO330N02KGFUMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 20V 5.4A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 20µA Supplier Device Package: PG-DSO-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSR802NL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 3.7A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 750mV @ 30µA Supplier Device Package: PG-SC59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 24123 шт: термін постачання 21-31 дні (днів) |
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BSS205NL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 2.5A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 11µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSZ160N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 8A/40A 8TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 12µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V |
на замовлення 5038 шт: термін постачання 21-31 дні (днів) |
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IPD034N06N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
на замовлення 29537 шт: термін постачання 21-31 дні (днів) |
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BTS3118DATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 4457 шт: термін постачання 21-31 дні (днів) |
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BTS3134DATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 12451 шт: термін постачання 21-31 дні (днів) |
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BTS3205NHUSA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 700mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS4300SGAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 300mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-24 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
на замовлення 8532 шт: термін постачання 21-31 дні (днів) |
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BTS500801TEAAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 8mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 30V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 10A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-5-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
на замовлення 27073 шт: термін постачання 21-31 дні (днів) |
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BTS50090-1TMA | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 8mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 38V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 9A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-7-4 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD0P2RF02LRHE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 21VC TSLP-2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: RF Antenna Capacitance @ Frequency: 0.23pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-2-17 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ESD5V3U4UHDMIE6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 5.3VWM 28VC TSLP-9-1Packaging: Cut Tape (CT) Package / Case: 9-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.4pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: PG-TSLP-9-1 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 28V (Typ) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IFX2931GV50XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA DSO8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPB50N10S3L-16 | Infineon Technologies |
Description: MOSFET N-CH 100V 50A TO263-3 |
на замовлення 1544 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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IPB70N10S312ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 70A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1917 шт: термін постачання 21-31 дні (днів) |
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IPD30N03S4L09ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 30A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Qualification: AEC-Q101 |
на замовлення 20684 шт: термін постачання 21-31 дні (днів) |
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IPD50P03P4L11ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 50A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD80P03P4L07ATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 80A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 158 шт: термін постачання 21-31 дні (днів) |
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IPD90N03S4L03ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 90A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 45µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1112 шт: термін постачання 21-31 дні (днів) |
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| TLE7230GXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:8 PDSO-24
Part Status: Obsolete
Fault Protection: Open Load Detect, Over Temperature
Supplier Device Package: PG-DSO-24-13
Ratio - Input:Output: 1:8
Current - Output (Max): 300mA
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 4.5V ~ 5.5V
Rds On (Typ): 800mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CHAN 1:8 PDSO-24
Part Status: Obsolete
Fault Protection: Open Load Detect, Over Temperature
Supplier Device Package: PG-DSO-24-13
Ratio - Input:Output: 1:8
Current - Output (Max): 300mA
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 4.5V ~ 5.5V
Rds On (Typ): 800mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TLE7230R |
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Виробник: Infineon Technologies
Description: IC SW SMART OCTAL LOWSIDE PDSO36
Description: IC SW SMART OCTAL LOWSIDE PDSO36
на замовлення 1539 шт:
термін постачання 21-31 дні (днів)
| TLE7231GXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:4 DSO-14
Part Status: Not For New Designs
Fault Protection: Open Load Detect, Over Temperature
Supplier Device Package: PG-DSO-14-1
Ratio - Input:Output: 1:4
Current - Output (Max): 320mA
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PWR DRIVER N-CHAN 1:4 DSO-14
Part Status: Not For New Designs
Fault Protection: Open Load Detect, Over Temperature
Supplier Device Package: PG-DSO-14-1
Ratio - Input:Output: 1:4
Current - Output (Max): 320mA
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: SPI
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 3440 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.15 грн |
| 10+ | 120.21 грн |
| 25+ | 109.81 грн |
| 100+ | 92.37 грн |
| 250+ | 87.27 грн |
| 500+ | 84.19 грн |
| 1000+ | 80.32 грн |
| TLE7232GXUMA1 |
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Виробник: Infineon Technologies
Description: IC SPI DRIVER RELAY CTRL PDSO-24
Description: IC SPI DRIVER RELAY CTRL PDSO-24
товару немає в наявності
В кошику
од. на суму грн.
| TLE7269GXUMA1 |
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Виробник: Infineon Technologies
Description: IC TRANSCEIVER FULL 2/2 DSO-14
Part Status: Not For New Designs
Duplex: Full
Receiver Hysteresis: 300 mV
Supplier Device Package: PG-DSO-14-24
Protocol: LINbus
Data Rate: 20kBd
Number of Drivers/Receivers: 2/2
Voltage - Supply: 7V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC TRANSCEIVER FULL 2/2 DSO-14
Part Status: Not For New Designs
Duplex: Full
Receiver Hysteresis: 300 mV
Supplier Device Package: PG-DSO-14-24
Protocol: LINbus
Data Rate: 20kBd
Number of Drivers/Receivers: 2/2
Voltage - Supply: 7V ~ 27V
Operating Temperature: -40°C ~ 150°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TLE7270DNTMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 300MA TO252-5
Part Status: Obsolete
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
Description: IC REG LINEAR 5V 300MA TO252-5
Part Status: Obsolete
Control Features: Delay, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO252-5-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 30 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Cut Tape (CT)
Current - Supply (Max): 40 µA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 200mA
PSRR: 60dB (100Hz)
товару немає в наявності
В кошику
од. на суму грн.
| TLE7368EXUMA1 |
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Виробник: Infineon Technologies
Description: IC PS SYSTEM MULTI VOLT PGDSO-36
Description: IC PS SYSTEM MULTI VOLT PGDSO-36
на замовлення 1795 шт:
термін постачання 21-31 дні (днів)
| TLE7368GNUMA1 |
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Виробник: Infineon Technologies
Description: IC REG AUTO APPL 3OUT PDSO36
Description: IC REG AUTO APPL 3OUT PDSO36
товару немає в наявності
В кошику
од. на суму грн.
| TLE7469GV52AUMA1 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 2.6V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Not For New Designs
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 2.6V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 2.6V/5V DSO-12
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): -, 0.6V @ 215mA
PSRR: 60dB (100Hz), 60dB (100Hz)
Part Status: Not For New Designs
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 2.6V, 5V
Supplier Device Package: PG-DSO-12-11
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 55 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA, 215mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1009 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.04 грн |
| 10+ | 187.37 грн |
| 25+ | 172.14 грн |
| 100+ | 145.85 грн |
| 250+ | 138.37 грн |
| 500+ | 133.87 грн |
| TLE8102SGAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
товару немає в наявності
В кошику
од. на суму грн.
| TLE8104EXT |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
товару немає в наявності
В кошику
од. на суму грн.
| BSC750N10ND G |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 3.2A 8TDSON
Description: MOSFET 2N-CH 100V 3.2A 8TDSON
на замовлення 4431 шт:
термін постачання 21-31 дні (днів)
| IPB100N04S3-03 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Description: MOSFET N-CH 40V 100A TO263-3
товару немає в наявності
В кошику
од. на суму грн.
| IPB47N10S-33 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 47A TO263-3
Description: MOSFET N-CH 100V 47A TO263-3
товару немає в наявності
В кошику
од. на суму грн.
| ISP772T |
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Виробник: Infineon Technologies
Description: IC SWITCH HISIDE SMART 8DSO
Description: IC SWITCH HISIDE SMART 8DSO
на замовлення 6140 шт:
термін постачання 21-31 дні (днів)
| TLE4253GS |
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Виробник: Infineon Technologies
Description: IC REG LDO ADJ 0.25A 8DSO
Description: IC REG LDO ADJ 0.25A 8DSO
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
| TLE4254GA |
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Виробник: Infineon Technologies
Description: IC REG LDO ADJ 70MA 8DSO
Description: IC REG LDO ADJ 70MA 8DSO
на замовлення 19025 шт:
термін постачання 21-31 дні (днів)
| TLE4284DV18ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LDO 1.8V 1A TO252-3
Description: IC REG LDO 1.8V 1A TO252-3
товару немає в наявності
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| TLE4290D |
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Виробник: Infineon Technologies
Description: IC REG LDO 5V 0.4A TO252-5
Description: IC REG LDO 5V 0.4A TO252-5
на замовлення 4701 шт:
термін постачання 21-31 дні (днів)
| TLE4294G V50 |
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Виробник: Infineon Technologies
Description: IC REG LDO 5V 30MA SCT595-5
Description: IC REG LDO 5V 30MA SCT595-5
на замовлення 5823 шт:
термін постачання 21-31 дні (днів)
| TLE4675DATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LDO 5V 0.4A TO252-5
Description: IC REG LDO 5V 0.4A TO252-5
товару немає в наявності
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| TLE6365G |
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Виробник: Infineon Technologies
Description: IC REG BUCK 5V 0.4A P8DSO
Description: IC REG BUCK 5V 0.4A P8DSO
на замовлення 6744 шт:
термін постачання 21-31 дні (днів)
| TLE6389-3G V50 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14DSO
Description: IC REG CTRLR BUCK 14DSO
на замовлення 8955 шт:
термін постачання 21-31 дні (днів)
| TLE7230G |
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Виробник: Infineon Technologies
Description: IC SW SMART OCTAL LOWSIDE PDSO24
Description: IC SW SMART OCTAL LOWSIDE PDSO24
товару немає в наявності
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| TLE7230R |
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Виробник: Infineon Technologies
Description: IC SW SMART OCTAL LOWSIDE PDSO36
Description: IC SW SMART OCTAL LOWSIDE PDSO36
на замовлення 1539 шт:
термін постачання 21-31 дні (днів)
| TLE7232GXUMA1 |
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Виробник: Infineon Technologies
Description: IC SPI DRIVER RELAY CTRL PDSO-24
Description: IC SPI DRIVER RELAY CTRL PDSO-24
товару немає в наявності
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од. на суму грн.
| TLE7368EXUMA1 |
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Виробник: Infineon Technologies
Description: IC PS SYSTEM MULTI VOLT PGDSO-36
Description: IC PS SYSTEM MULTI VOLT PGDSO-36
на замовлення 1795 шт:
термін постачання 21-31 дні (днів)
| BSZ042N04NS G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 40A TSDSON-8
Description: MOSFET N-CH 40V 40A TSDSON-8
товару немає в наявності
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| BTS443P |
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Виробник: Infineon Technologies
Description: SWITCH HIGH SIDE POWER TO252-5
Description: SWITCH HIGH SIDE POWER TO252-5
товару немає в наявності
В кошику
од. на суму грн.
| CYRF6936b-40LtXC |
Виробник: Infineon Technologies
Description: IC RF TXRX ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 21mA
Data Rate (Max): 1Mbps
Current - Transmitting: 21mA
Supplier Device Package: 40-QFN (6x6)
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RF TXRX ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 21mA
Data Rate (Max): 1Mbps
Current - Transmitting: 21mA
Supplier Device Package: 40-QFN (6x6)
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| BSC067N06LS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 15A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
Description: MOSFET N-CH 60V 15A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.58 грн |
| 10+ | 87.53 грн |
| 100+ | 59.05 грн |
| BSD316SNL6327XT |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
на замовлення 732 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 16.27 грн |
| 30+ | 10.22 грн |
| 100+ | 7.33 грн |
| 500+ | 5.77 грн |
| BSL215PL6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2P-CH 20V 1.5A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Description: MOSFET 2P-CH 20V 1.5A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
товару немає в наявності
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| BSL302SNL6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Description: MOSFET N-CH 30V 7.1A TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
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| BSL306NL6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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| BSO033N03MSGXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 17A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
Description: MOSFET N-CH 30V 17A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
на замовлення 24288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.89 грн |
| 10+ | 104.32 грн |
| 100+ | 81.33 грн |
| 500+ | 63.05 грн |
| 1000+ | 49.78 грн |
| BSO051N03MS G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 2132 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.30 грн |
| 10+ | 29.92 грн |
| 100+ | 25.05 грн |
| 500+ | 21.61 грн |
| 1000+ | 21.02 грн |
| BSO080P03SNTMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Description: MOSFET P-CH 30V 12.6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| BSO083N03MSGXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Description: MOSFET N-CH 30V 11A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
на замовлення 2056 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.94 грн |
| 10+ | 36.64 грн |
| 100+ | 31.12 грн |
| 500+ | 26.04 грн |
| 1000+ | 24.79 грн |
| BSZ440N10NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
на замовлення 6182 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.92 грн |
| 10+ | 50.07 грн |
| 100+ | 32.89 грн |
| 500+ | 23.95 грн |
| 1000+ | 21.72 грн |
| 2000+ | 19.84 грн |
| BSO330N02KGFUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 5.4A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Supplier Device Package: PG-DSO-8
Description: MOSFET 2N-CH 20V 5.4A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Supplier Device Package: PG-DSO-8
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| BSR802NL6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 3.7A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.7A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
Qualification: AEC-Q101
на замовлення 24123 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.32 грн |
| 10+ | 38.73 грн |
| 100+ | 25.13 грн |
| 500+ | 18.09 грн |
| 1000+ | 16.32 грн |
| BSS205NL6327HTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
Description: MOSFET N-CH 20V 2.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 419 pF @ 10 V
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од. на суму грн.
| BSZ160N10NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Description: MOSFET N-CH 100V 8A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
на замовлення 5038 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.71 грн |
| 10+ | 85.44 грн |
| 100+ | 57.83 грн |
| 500+ | 43.17 грн |
| 1000+ | 40.89 грн |
| IPD034N06N3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 29537 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 192.95 грн |
| 10+ | 119.84 грн |
| 100+ | 82.20 грн |
| 500+ | 62.05 грн |
| 1000+ | 58.18 грн |
| BTS3118DATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 4457 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.94 грн |
| 10+ | 75.22 грн |
| 25+ | 68.32 грн |
| 100+ | 57.00 грн |
| 250+ | 53.60 грн |
| 500+ | 51.56 грн |
| 1000+ | 49.05 грн |
| BTS3134DATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 12451 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.48 грн |
| 10+ | 99.02 грн |
| 25+ | 90.20 грн |
| 100+ | 75.62 грн |
| 250+ | 71.31 грн |
| 500+ | 68.71 грн |
| 1000+ | 65.48 грн |
| BTS3205NHUSA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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| BTS4300SGAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 300mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 8532 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.19 грн |
| 10+ | 69.40 грн |
| 25+ | 62.89 грн |
| 100+ | 52.31 грн |
| 250+ | 49.11 грн |
| 500+ | 47.18 грн |
| 1000+ | 44.84 грн |
| BTS500801TEAAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 30V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 27073 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.20 грн |
| 10+ | 179.02 грн |
| 25+ | 164.31 грн |
| 100+ | 139.03 грн |
| 250+ | 131.80 грн |
| 500+ | 130.47 грн |
| BTS50090-1TMA |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220-7
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 38V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-7-4
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
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од. на суму грн.
| ESD0P2RF02LRHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 21VC TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
Description: TVS DIODE 5.3VWM 21VC TSLP-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: RF Antenna
Capacitance @ Frequency: 0.23pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power Line Protection: No
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од. на суму грн.
| ESD5V3U4UHDMIE6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: TVS DIODE 5.3VWM 28VC TSLP-9-1
Packaging: Cut Tape (CT)
Package / Case: 9-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-9-1
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Description: TVS DIODE 5.3VWM 28VC TSLP-9-1
Packaging: Cut Tape (CT)
Package / Case: 9-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: PG-TSLP-9-1
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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| IFX2931GV50XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 100MA DSO8
Description: IC REG LINEAR 5V 100MA DSO8
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В кошику
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| IPB50N10S3L-16 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO263-3
Description: MOSFET N-CH 100V 50A TO263-3
на замовлення 1544 шт:
термін постачання 21-31 дні (днів)
| IPB70N10S312ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.42 грн |
| 10+ | 155.36 грн |
| 100+ | 108.70 грн |
| 500+ | 89.79 грн |
| IPD30N03S4L09ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Qualification: AEC-Q101
на замовлення 20684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.04 грн |
| 10+ | 47.76 грн |
| 100+ | 31.42 грн |
| 500+ | 22.89 грн |
| 1000+ | 20.76 грн |
| IPD50P03P4L11ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| IPD80P03P4L07ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 80A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 158 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.31 грн |
| 10+ | 77.68 грн |
| 100+ | 52.38 грн |
| IPD90N03S4L03ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1112 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 93.20 грн |
| 100+ | 63.14 грн |
| 500+ | 47.18 грн |
| 1000+ | 43.30 грн |

















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