Продукція виробника infineon technologies
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| Фото | Назва | Техн. інф. | Виробник | Інформація | В наявності/на замовлення | Ціна без ПДВ |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAS140WE6327 Код товару: 117616 |
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Infineon Technologies |
Діоди, діодні мости, стабілітрони - Діоди Шотткі |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 15083 шт - ціна та термін постачання
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BAS140WE6327HTSA1 Код товару: 144159 |
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Infineon Technologies |
Діоди, діодні мости, стабілітрони - Діоди Шотткі |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 58806 шт - ціна та термін постачання
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TLE9251VLEXUMA1 Код товару: 163586 |
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Infineon Technologies |
Мікросхеми - Інтерфейсні Корпус: TSON Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP Тип монтажу: SMD Інтерфейс: CAN |
в наявності: 28 шт
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IPB123N10N3GATMA1 |
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Infineon Technologies |
Description: MOSFET N-CH 100V 58A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.5V @ 46µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 1388 шт - ціна та термін постачання
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| SAK-XC2267M-104F80L AB | Infineon Technologies |
Description: IC MCU 16BIT 100LQFP Manufacturer: Infineon Technologies Packaging: Tape & Reel (TR) Part Status: Obsolete |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||||
| IFS200V12PT4BOSA1 |
|
Infineon Technologies |
Description: MODULE IPM MIPAQ-3 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
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IR38363MTRPBFAUMA1 |
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Infineon Technologies |
Description: IC REG 15A 34PQFN Base Part Number: IR38363 Supplier Device Package: 34-PQFN (5x7) Package / Case: 34-PowerVFQFN Mounting Type: Surface Mount Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Infineon Technologies |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3360 шт - ціна та термін постачання
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IPW60R018CFD7XKSA1 |
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Infineon Technologies |
Description: MOSFET N CH Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Current - Continuous Drain (Id) @ 25°C: 101A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
на замовлення 59 шт термін постачання 14-28 дні (днів) |
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IPW60R017C7XKSA1 |
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Infineon Technologies |
Description: HIGH POWER_NEW Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 4V @ 2.91mA Power Dissipation (Max): 446W (Tc) Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V Current - Continuous Drain (Id) @ 25°C: 109A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-3 Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
 |
IPW60R037CSFDXKSA1 | Infineon Technologies |
Description: MOSFET N CH Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel |
на замовлення 218 шт термін постачання 14-28 дні (днів) |
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| IPW60R075CPAFKSA1 |
|
Infineon Technologies |
Description: AUTOMOTIVE Part Status: Active Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
 |
IPW60R120P7XKSA1 |
|
Infineon Technologies |
Description: MOSFET N-CH 600V 26A TO247-3 Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4V @ 410µA Power Dissipation (Max): 95W (Tc) |
на замовлення 1 шт термін постачання 14-28 дні (днів) |
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IPW60R145CFD7XKSA1 |
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Infineon Technologies |
Description: MOSFET HIGH POWER Part Status: Active FET Feature: Standard Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Packaging: Tube |
на замовлення 178 шт термін постачання 14-28 дні (днів) |
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IPW60R060P7XKSA1 |
|
Infineon Technologies |
Description: MOSFET N-CH 600V 48A TO247-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4V @ 800µA Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
 |
IPW60R090CFD7XKSA1 |
|
Infineon Technologies |
Description: MOSFET N-CH 600V 25A TO247-3 Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 570µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V |
на замовлення 199 шт термін постачання 14-28 дні (днів) |
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SHIELDBTS500151TADTOBO1 |
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Infineon Technologies |
Description: EVAL 12V PROTECT SWITCH SHIELD Part Status: Active Utilized IC / Part: BTS50015-1TAD Contents: Board(s) Type: Power Management Function: Switch Packaging: Bulk |
на замовлення 1 шт термін постачання 14-28 дні (днів) |
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| SIDC14D120H8X1SA1 |
|
Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 25A WAFER Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Speed: Standard Recovery >500ns, > 200mA (Io) Current - Average Rectified (Io): 25A (DC) Supplier Device Package: Sawn on foil Diode Type: Standard Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
| SRF55V10PNBX1SA3 | Infineon Technologies |
Description: IC INTELLIGENT EEPROM MCC2-2 Part Status: Active |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||||
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IPD80R2K0P7ATMA1 |
|
Infineon Technologies |
Description: MOSFET N-CH 800V 3A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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SGP04N60XKSA1 |
|
Infineon Technologies |
Description: IGBT, 9.4A, 600V, N-CHANNEL Package / Case: TO-220-3 Packaging: Tube Power - Max: 50 W Current - Collector Pulsed (Icm): 19 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 9.4 A Part Status: Obsolete Gate Charge: 24 nC Test Condition: 400V, 4A, 67Ohm, 15V Switching Energy: 131µJ Td (on/off) @ 25°C: 22ns/237ns IGBT Type: NPT Supplier Device Package: PG-TO220-3-1 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
на замовлення 11298 шт термін постачання 14-28 дні (днів) |
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IRS2541STRPBF |
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Infineon Technologies |
Description: IC LED DRIVER CTRLR DIM 8SOIC Operating Temperature: -25°C ~ 150°C (TJ) Topology: Step-Down (Buck) Type: DC DC Controller Part Status: Obsolete Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Dimming: PWM Frequency: 500kHz Voltage - Supply (Max): 15.6V Voltage - Supply (Min): 9V Number of Outputs: 1 Internal Switch(s): No Base Part Number: IRS2541SPBF Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRS25411STRPBF |
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Infineon Technologies |
Description: IC LED DRIVER CTRLR DIM 8SOIC Part Status: Discontinued at Digi-Key Voltage - Supply (Max): 16.6V Voltage - Supply (Min): 8V Number of Outputs: 1 Internal Switch(s): No Topology: Step-Down (Buck) Type: DC DC Controller Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Base Part Number: IRS25411SPBF Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Dimming: PWM Frequency: 500kHz |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
 |
IRS25411PBF |
|
Infineon Technologies |
Description: IC LED DRIVER CTRLR DIM 8DIP Packaging: Tube Part Status: Obsolete Voltage - Supply (Max): 16.6V Voltage - Supply (Min): 8V Dimming: PWM Supplier Device Package: 8-PDIP Topology: Step-Down (Buck) Internal Switch(s): No Operating Temperature: -25°C ~ 150°C (TJ) Type: DC DC Controller Frequency: 500kHz Number of Outputs: 1 Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) |
на замовлення 900 шт термін постачання 14-28 дні (днів)
на замовлення 870 шт - ціна та термін постачання
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IRS2541PBF |
|
Infineon Technologies |
Description: IC LED DRVR CTRLR DIM 500MA 8DIP Part Status: Obsolete Voltage - Supply (Max): 15.6V Voltage - Supply (Min): 9V Dimming: PWM Supplier Device Package: 8-PDIP Topology: Step-Down (Buck) Internal Switch(s): No Operating Temperature: -25°C ~ 150°C (TJ) Type: DC DC Controller Frequency: 500kHz Number of Outputs: 1 Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 300 шт термін постачання 14-28 дні (днів) |
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BSL307SPH6327XTSA1 |
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Infineon Technologies |
Description: MOSFET P-CH 30V 5.5A 6TSOP Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP-6-1 Package / Case: SOT-23-6 Thin, TSOT-23-6 |
на замовлення 2931 шт термін постачання 14-28 дні (днів) |
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IPB180N04S400ATMA1 |
|
Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO263-7-3 Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: PG-TO263-7-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) |
на замовлення 13422 шт термін постачання 14-28 дні (днів) |
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IR2156STRPBF |
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Infineon Technologies |
Description: IC BALLAST CNTRL 44KHZ 14SOIC Base Part Number: IR2156SPBF Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Dimming: No Current - Supply: 10mA Voltage - Supply: 10.5V ~ 16.5V Frequency: 36kHz ~ 44kHz Type: Ballast Controller Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) |
на замовлення 3537 шт термін постачання 14-28 дні (днів)
на замовлення 10000 шт - ціна та термін постачання
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| DDB2U40N12W1RFB11BPSA1 |
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Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-2311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: AG-EASY1B-1 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A Current - Reverse Leakage @ Vr: 116 µA @ 1200 V |
на замовлення 24 шт термін постачання 14-28 дні (днів) |
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BSP321PH6327XTSA1 |
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Infineon Technologies |
Description: MOSFET P-CH 100V 980MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
на замовлення 782 шт термін постачання 14-28 дні (днів)
на замовлення 782 шт - ціна та термін постачання
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ICE2A0565ZHKLA1 |
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Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Part Status: Obsolete Control Features: Soft Start Voltage - Start Up: 13.5 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DIP-7-1 Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 72% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Power (Watts): 23 W |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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ICE2A0565GXUMA1 |
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Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSO Power (Watts): 23 W Part Status: Obsolete Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Packaging: Tape & Reel (TR) Control Features: Soft Start Voltage - Start Up: 13.5 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-12-10 Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 72% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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ICE2A0565FKLA1 |
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Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Power (Watts): 23 W Part Status: Obsolete Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 13.5 V Control Features: Soft Start Supplier Device Package: PG-DIP-8 Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 72% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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AUIRFZ24NSTRR |
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Infineon Technologies |
Description: MOSFET N-CH 55V 17A DPAK Part Status: Obsolete Supplier Device Package: D-PAK (TO-252AA) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRFZ24NSTRLPBF |
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Infineon Technologies |
Description: MOSFET N-CH 55V 17A D2PAK Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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AUXCLFZ24NSTRL |
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Infineon Technologies |
Description: MOSFET N-CH 55V 17A D2PAK Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRFZ24NSTRL |
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Infineon Technologies |
Description: MOSFET N-CH 55V 17A D2PAK Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Mounting Type: Surface Mount |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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AUIRFZ24NSTRL |
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Infineon Technologies |
Description: MOSFET N-CH 55V 17A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Mounting Type: Surface Mount Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 8216 шт - ціна та термін постачання
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TLE5009A16DE1200XUMA1 |
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Infineon Technologies |
Description: SENSOR ANGLE 360DEG SMD Part Status: Active Output Signal: Cosine, Sine Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Supplier Device Package: PG-TDSO-16 For Measuring: Angle Technology: Magnetoresistive Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Actuator Type: External Magnet, Not Included Voltage - Supply: 3V ~ 3.6V Termination Style: Gull Wing Operating Temperature: -40°C ~ 125°C Output: Analog Voltage |
на замовлення 2290 шт термін постачання 14-28 дні (днів)
на замовлення 2500 шт - ціна та термін постачання
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BAS21E6327HTSA1 |
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Infineon Technologies |
Description: DIODE GEN PURP 200V 250MA SOT23 Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Current - Average Rectified (Io): 250mA (DC) Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Base Part Number: BAS21 Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Part Status: Last Time Buy Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Mounting Type: Surface Mount Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100nA @ 200V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 37687 шт термін постачання 14-28 дні (днів) |
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| Infineon Technologies |
Description: DIODE GP 200V 250MA SOT23-3 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOT23 Current - Average Rectified (Io): 250mA (DC) Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 5pF @ 0V, 1MHz |
на замовлення 1097 шт термін постачання 14-28 дні (днів) |
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BAS2103WE6327HTSA1 |
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Infineon Technologies |
Description: DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Part Status: Last Time Buy Base Part Number: BAS21-03W Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOD323-2 Package / Case: SC-76, SOD-323 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Current - Average Rectified (Io): 250mA (DC) Voltage - DC Reverse (Vr) (Max): 200V |
на замовлення 41943 шт термін постачання 14-28 дні (днів) |
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| Infineon Technologies |
Description: DIODE GEN PURP 200V 250MA SOD323 Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOD323-2 Current - Average Rectified (Io): 250mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 577 шт термін постачання 14-28 дні (днів) |
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BC857BE6327HTSA1 |
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Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT-23 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Frequency - Transition: 250MHz Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 100mA Transistor Type: PNP Part Status: Last Time Buy Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Base Part Number: BC857 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 36025 шт термін постачання 14-28 дні (днів) |
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XMC1404Q064X0200AAXUMA1 |
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Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 64VQFN Connectivity: CANbus, I²C, LINbus, SPI, UART/USART Speed: 48MHz Core Size: 32-Bit Core Processor: ARM® Cortex®-M0 Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Supplier Device Package: PG-VQFN-64-6 Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Data Converters: A/D 12x12b Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V RAM Size: 16K x 8 Program Memory Type: FLASH Program Memory Size: 200KB (200K x 8) Number of I/O: 48 Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT |
на замовлення 1846 шт термін постачання 14-28 дні (днів)
на замовлення 17598 шт - ціна та термін постачання
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| SIGC12T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Part Status: Obsolete IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Input Type: Standard Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 10A, 27Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Manufacturer: Infineon Technologies |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||||
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IRF7307QTRPBF |
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Infineon Technologies |
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Power - Max: 2W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 60000 шт - ціна та термін постачання
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IRF7307PBF |
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Infineon Technologies |
Description: MOSFET N/P-CH 20V 8-SOIC Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 9 шт - ціна та термін постачання
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IPB180N04S401ATMA1 |
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Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO263-7 Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 4V @ 140µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 4482 шт - ціна та термін постачання
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IPC100N04S51R9ATMA1 |
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Infineon Technologies |
Description: MOSFET N-CH 40V 100A 8TDSON-34 Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-34 Vgs(th) (Max) @ Id: 3.4V @ 50µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 9802 шт - ціна та термін постачання
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BFR92PE6327HTSA1 |
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Infineon Technologies |
Description: RF TRANS NPN 15V 5GHZ SOT23-3 Base Part Number: BFR92 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 45mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Power - Max: 280mW Gain: 10.5dB ~ 16dB Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Frequency - Transition: 5GHz Voltage - Collector Emitter Breakdown (Max): 15V Transistor Type: NPN Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) |
на замовлення 24044 шт термін постачання 14-28 дні (днів)
на замовлення 3500 шт - ціна та термін постачання
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1ED020I12FA2XUMA2 |
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Infineon Technologies |
Description: IC IGBT DVR 1200V 2A DSO20 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Output Supply: 13V ~ 20V Current - Output High, Low: 2A, 2A Rise / Fall Time (Typ): 30ns, 50ns Voltage - Isolation: 4500Vrms Number of Channels: 1 Technology: Magnetic Coupling Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Supplier Device Package: PG-DSO-20-77 Package / Case: 20-SOIC (0.295", 7.50mm Width) |
на замовлення 998 шт термін постачання 14-28 дні (днів) |
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AUIRLR2905Z |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5 шт - ціна та термін постачання
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AUIRLR2905TRL |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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AUIRLR2905 |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905TRRPBF |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905CPBF |
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Infineon Technologies |
Description: MOSFET N-CH 55V 36A DPAK Mounting Type: Surface Mount Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta) Supplier Device Package: D-Pak Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905PBF |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Packaging: Tube Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 50 шт - ціна та термін постачання
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IRLR2905ZPBF |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905Z |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905TRR |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905TRL |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905ZTRLPBF |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 110W (Tc) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRLR2905ZTRPBF |
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Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drain to Source Voltage (Vdss): 55V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 110W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
на замовлення 3393 шт термін постачання 14-28 дні (днів)
на замовлення 150 шт - ціна та термін постачання
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IR2103STRPBF |
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Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Rise / Fall Time (Typ): 100ns, 50ns High Side Voltage - Max (Bootstrap): 600V Input Type: Inverting, Non-Inverting Current - Peak Output (Source, Sink): 210mA, 360mA Logic Voltage - VIL, VIH: 0.8V, 3V Voltage - Supply: 10V ~ 20V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Channel Type: Independent Driven Configuration: Half-Bridge |
на замовлення 5933 шт термін постачання 14-28 дні (днів)
на замовлення 55932 шт - ціна та термін постачання
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ITS4140NHUMA1 |
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Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PG-SOT223-4 Ratio - Input:Output: 1:1 Current - Output (Max): 200mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 4.9V ~ 60V Input Type: Non-Inverting Rds On (Typ): 1Ohm Output Configuration: High Side Operating Temperature: -30°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Part Status: Active Output Type: N-Channel Package / Case: TO-261-4, TO-261AA Features: Auto Restart Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 4368 шт - ціна та термін постачання
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IRG4BC15UD-LPBF |
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Infineon Technologies |
Description: IGBT 600V 14A 49W TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A Supplier Device Package: TO-262 Td (on/off) @ 25°C: 17ns/160ns Switching Energy: 240µJ (on), 260µJ (off) Test Condition: 480V, 7.8A, 75Ohm, 15V Gate Charge: 23 nC Part Status: Obsolete Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 42 A Power - Max: 49 W |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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TDA48632GXUMA2 |
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Infineon Technologies |
Description: IC PFC CTRLR DCM 8DSO Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Base Part Number: TDA4863 Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Startup: 20µA Voltage - Supply: 12.5V ~ 20V Operating Temperature: -40°C ~ 150°C Mode: Discontinuous Conduction (DCM) |
на замовлення 15294 шт термін постачання 14-28 дні (днів)
на замовлення 4644 шт - ціна та термін постачання
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IRF5305SPBF |
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Infineon Technologies |
Description: MOSFET P-CH 55V 31A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRF5305L |
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Infineon Technologies |
Description: MOSFET P-CH 55V 31A TO262 Packaging: Tube Part Status: Obsolete Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 2080 шт - ціна та термін постачання
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IRF5305STRRPBF |
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Infineon Technologies |
Description: MOSFET P-CH 55V 31A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRF5305PBF |
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Infineon Technologies |
Description: MOSFET P-CH 55V 31A TO220AB Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 4718 шт термін постачання 14-28 дні (днів)
на замовлення 1137 шт - ціна та термін постачання
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IRF540NL |
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Infineon Technologies |
Description: MOSFET N-CH 100V 33A TO262 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IRF540NSTRRPBF |
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Infineon Technologies |
Description: MOSFET N-CH 100V 33A D2PAK Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 1 шт - ціна та термін постачання
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IRF540NPBF |
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Infineon Technologies |
Description: MOSFET N-CH 100V 33A TO220AB Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA |
на замовлення 28376 шт термін постачання 14-28 дні (днів)
на замовлення 13877 шт - ціна та термін постачання
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IRF540NLPBF |
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Infineon Technologies |
Description: MOSFET N-CH 100V 33A TO262 Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 250µA FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Power Dissipation (Max): 130W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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IR3556MTRPBF |
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Infineon Technologies |
Description: IC DRIVER GATE 50A PQFN Packaging: Cut Tape (CT) Part Status: Obsolete Applications: Synchronous Buck Converters, Voltage Regulators Interface: PWM Load Type: Inductive Current - Output / Channel: 50A Voltage - Supply: 4.5V ~ 7V Voltage - Load: 4.5V ~ 15V Features: Diode Emulation, Status Flag Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO Mounting Type: Surface Mount Package / Case: 30-PowerVFQFN Supplier Device Package: 30-PQFN (6x6) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
| IRG5U75HF06A |
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Infineon Technologies |
Description: IGBT MOD 600V 100A 330W POWIR 34 Part Status: Obsolete Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Supplier Device Package: POWIR® 34 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: POWIR® 34 Module Packaging: Box Power - Max: 330 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
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IRG4RC10UTRPBF |
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Infineon Technologies |
Description: IGBT 600V 8.5A 38W DPAK Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8.5A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Power - Max: 38W Switching Energy: 80µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 19ns/116ns Test Condition: 480V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5734 шт - ціна та термін постачання
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IRGR3B60KD2TRLP |
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Infineon Technologies |
Description: IGBT 600V 7.8A 52W DPAK IGBT Type: NPT Supplier Device Package: D-Pak Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Reverse Recovery Time (trr): 77 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 52 W Current - Collector Pulsed (Icm): 15.6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7.8 A Part Status: Obsolete Gate Charge: 13 nC Test Condition: 400V, 3A, 100Ohm, 15V Switching Energy: 62µJ (on), 39µJ (off) Td (on/off) @ 25°C: 18ns/110ns |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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|
IRGR3B60KD2TRP |
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Infineon Technologies |
Description: IGBT 600V 7.8A 52W DPAK Reverse Recovery Time (trr): 77 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 52 W Current - Collector Pulsed (Icm): 15.6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7.8 A Part Status: Obsolete Gate Charge: 13 nC Test Condition: 400V, 3A, 100Ohm, 15V Switching Energy: 62µJ (on), 39µJ (off) Td (on/off) @ 25°C: 18ns/110ns IGBT Type: NPT Supplier Device Package: D-Pak Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
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|
IRG4RC10UDTRLP |
|
Infineon Technologies |
Description: IGBT 600V 8.5A 38W DPAK Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Reverse Recovery Time (trr): 28ns Test Condition: 480V, 5A, 100Ohm, 15V Td (on/off) @ 25°C: 40ns/87ns Gate Charge: 15nC Input Type: Standard Switching Energy: 140µJ (on), 120µJ (off) Power - Max: 38W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Current - Collector Pulsed (Icm): 34A Current - Collector (Ic) (Max): 8.5A Voltage - Collector Emitter Breakdown (Max): 600V Part Status: Obsolete Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 18478 шт - ціна та термін постачання
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|
IRGS6B60KDTRLP |
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Infineon Technologies |
Description: IGBT 600V 13A 90W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3828 шт - ціна та термін постачання
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|
IRGS10B60KDTRLP |
|
Infineon Technologies |
Description: IGBT 600V 22A 156W D2PAK Td (on/off) @ 25°C: 30ns/230ns IGBT Type: NPT Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A Reverse Recovery Time (trr): 90 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Power - Max: 156 W Current - Collector Pulsed (Icm): 44 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 22 A Part Status: Obsolete Gate Charge: 38 nC Test Condition: 400V, 10A, 47Ohm, 15V Switching Energy: 140µJ (on), 250µJ (off) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3124 шт - ціна та термін постачання
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| TLE9251VLEXUMA1 Код товару: 163586 |
|
Виробник: Infineon Technologies
Мікросхеми - Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
25 шт - склад КиївМікросхеми - Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
3 шт - РАДІОМАГ-Дніпро
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| IPB123N10N3GATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 1388 шт - ціна та термін постачання
| SAK-XC2267M-104F80L AB |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Manufacturer: Infineon Technologies
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC MCU 16BIT 100LQFP
Manufacturer: Infineon Technologies
Packaging: Tape & Reel (TR)
Part Status: Obsolete
| IFS200V12PT4BOSA1 |
|
Виробник: Infineon Technologies
Description: MODULE IPM MIPAQ-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MODULE IPM MIPAQ-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
| IR38363MTRPBFAUMA1 |
|
Виробник: Infineon Technologies
Description: IC REG 15A 34PQFN
Base Part Number: IR38363
Supplier Device Package: 34-PQFN (5x7)
Package / Case: 34-PowerVFQFN
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Infineon Technologies
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC REG 15A 34PQFN
Base Part Number: IR38363
Supplier Device Package: 34-PQFN (5x7)
Package / Case: 34-PowerVFQFN
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Infineon Technologies
на замовлення 3360 шт - ціна та термін постачання
| IPW60R018CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
на замовлення 59 шт Description: MOSFET N CH
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
термін постачання 14-28 дні (днів)
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| IPW60R017C7XKSA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
| IPW60R037CSFDXKSA1 |
Виробник: Infineon Technologies
Description: MOSFET N CH
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
на замовлення 218 шт Description: MOSFET N CH
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
термін постачання 14-28 дні (днів)
|
| IPW60R075CPAFKSA1 |
|
| IPW60R120P7XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
на замовлення 1 шт Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
термін постачання 14-28 дні (днів)
|
| IPW60R145CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET HIGH POWER
Part Status: Active
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Tube
на замовлення 178 шт Description: MOSFET HIGH POWER
Part Status: Active
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Tube
термін постачання 14-28 дні (днів)
|
| IPW60R060P7XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 600V 48A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| IPW60R090CFD7XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO247-3
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 199 шт Description: MOSFET N-CH 600V 25A TO247-3
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
термін постачання 14-28 дні (днів)
|
| SHIELDBTS500151TADTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL 12V PROTECT SWITCH SHIELD
Part Status: Active
Utilized IC / Part: BTS50015-1TAD
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
на замовлення 1 шт Description: EVAL 12V PROTECT SWITCH SHIELD
Part Status: Active
Utilized IC / Part: BTS50015-1TAD
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
термін постачання 14-28 дні (днів)
| SIDC14D120H8X1SA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 25A (DC)
Supplier Device Package: Sawn on foil
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: DIODE GEN PURP 1.2KV 25A WAFER
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 25A (DC)
Supplier Device Package: Sawn on foil
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
| SRF55V10PNBX1SA3 |
| IPD80R2K0P7ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
| SGP04N60XKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT, 9.4A, 600V, N-CHANNEL
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 50 W
Current - Collector Pulsed (Icm): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9.4 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 4A, 67Ohm, 15V
Switching Energy: 131µJ
Td (on/off) @ 25°C: 22ns/237ns
IGBT Type: NPT
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 11298 шт Description: IGBT, 9.4A, 600V, N-CHANNEL
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 50 W
Current - Collector Pulsed (Icm): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9.4 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 4A, 67Ohm, 15V
Switching Energy: 131µJ
Td (on/off) @ 25°C: 22ns/237ns
IGBT Type: NPT
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
термін постачання 14-28 дні (днів)
|
| IRS2541STRPBF |
|
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8SOIC
Operating Temperature: -25°C ~ 150°C (TJ)
Topology: Step-Down (Buck)
Type: DC DC Controller
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Dimming: PWM
Frequency: 500kHz
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Number of Outputs: 1
Internal Switch(s): No
Base Part Number: IRS2541SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC LED DRIVER CTRLR DIM 8SOIC
Operating Temperature: -25°C ~ 150°C (TJ)
Topology: Step-Down (Buck)
Type: DC DC Controller
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Dimming: PWM
Frequency: 500kHz
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Number of Outputs: 1
Internal Switch(s): No
Base Part Number: IRS2541SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
| IRS25411STRPBF |
|
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8SOIC
Part Status: Discontinued at Digi-Key
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Number of Outputs: 1
Internal Switch(s): No
Topology: Step-Down (Buck)
Type: DC DC Controller
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: IRS25411SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Dimming: PWM
Frequency: 500kHz
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC LED DRIVER CTRLR DIM 8SOIC
Part Status: Discontinued at Digi-Key
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Number of Outputs: 1
Internal Switch(s): No
Topology: Step-Down (Buck)
Type: DC DC Controller
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: IRS25411SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Dimming: PWM
Frequency: 500kHz
| IRS25411PBF |
|
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8DIP
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
на замовлення 900 шт Description: IC LED DRIVER CTRLR DIM 8DIP
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
термін постачання 14-28 дні (днів)
на замовлення 870 шт - ціна та термін постачання
| IRS2541PBF |
|
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR DIM 500MA 8DIP
Part Status: Obsolete
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 300 шт Description: IC LED DRVR CTRLR DIM 500MA 8DIP
Part Status: Obsolete
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
термін постачання 14-28 дні (днів)
| BSL307SPH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A 6TSOP
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP-6-1
Package / Case: SOT-23-6 Thin, TSOT-23-6
на замовлення 2931 шт Description: MOSFET P-CH 30V 5.5A 6TSOP
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP-6-1
Package / Case: SOT-23-6 Thin, TSOT-23-6
термін постачання 14-28 дні (днів)
| IPB180N04S400ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7-3
Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
на замовлення 13422 шт Description: MOSFET N-CH 40V 180A TO263-7-3
Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
термін постачання 14-28 дні (днів)
| IR2156STRPBF |
|
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 44KHZ 14SOIC
Base Part Number: IR2156SPBF
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Dimming: No
Current - Supply: 10mA
Voltage - Supply: 10.5V ~ 16.5V
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 3537 шт Description: IC BALLAST CNTRL 44KHZ 14SOIC
Base Part Number: IR2156SPBF
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Dimming: No
Current - Supply: 10mA
Voltage - Supply: 10.5V ~ 16.5V
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
термін постачання 14-28 дні (днів)
на замовлення 10000 шт - ціна та термін постачання
| DDB2U40N12W1RFB11BPSA1 |
|
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
на замовлення 24 шт Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
термін постачання 14-28 дні (днів)
|
| BSP321PH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 782 шт Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
термін постачання 14-28 дні (днів)
на замовлення 782 шт - ціна та термін постачання
| ICE2A0565ZHKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 23 W
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 23 W
| ICE2A0565GXUMA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 23 W
Part Status: Obsolete
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-10
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 23 W
Part Status: Obsolete
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-10
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| ICE2A0565FKLA1 |
|
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 23 W
Part Status: Obsolete
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 23 W
Part Status: Obsolete
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
| AUIRFZ24NSTRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Part Status: Obsolete
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A DPAK
Part Status: Obsolete
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
| IRFZ24NSTRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A D2PAK
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
| AUXCLFZ24NSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
| IRFZ24NSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Mounting Type: Surface Mount
| AUIRFZ24NSTRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 8216 шт - ціна та термін постачання
| TLE5009A16DE1200XUMA1 |
|
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
на замовлення 2290 шт Description: SENSOR ANGLE 360DEG SMD
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
термін постачання 14-28 дні (днів)
на замовлення 2500 шт - ціна та термін постачання
|
| BAS21E6327HTSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Base Part Number: BAS21
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 37687 шт Description: DIODE GEN PURP 200V 250MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Base Part Number: BAS21
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
термін постачання 14-28 дні (днів)
на замовлення 1097 шт - ціна та термін постачання
| BAS21E6327HTSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GP 200V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
на замовлення 1097 шт Description: DIODE GP 200V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
термін постачання 14-28 дні (днів)
на замовлення 37687 шт - ціна та термін постачання
|
| BAS2103WE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOD323
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: BAS21-03W
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Package / Case: SC-76, SOD-323
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
на замовлення 41943 шт Description: DIODE GEN PURP 200V 250MA SOD323
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: BAS21-03W
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Package / Case: SC-76, SOD-323
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
термін постачання 14-28 дні (днів)
на замовлення 577 шт - ціна та термін постачання
| BAS2103WE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 577 шт Description: DIODE GEN PURP 200V 250MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
термін постачання 14-28 дні (днів)
на замовлення 41943 шт - ціна та термін постачання
|
| BC857BE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 250MHz
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: BC857
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 36025 шт Description: TRANS PNP 45V 0.1A SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 250MHz
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: BC857
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
термін постачання 14-28 дні (днів)
| XMC1404Q064X0200AAXUMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64VQFN
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Speed: 48MHz
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-VQFN-64-6
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Data Converters: A/D 12x12b
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
RAM Size: 16K x 8
Program Memory Type: FLASH
Program Memory Size: 200KB (200K x 8)
Number of I/O: 48
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
на замовлення 1846 шт Description: IC MCU 32BIT 200KB FLASH 64VQFN
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Speed: 48MHz
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-VQFN-64-6
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Data Converters: A/D 12x12b
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
RAM Size: 16K x 8
Program Memory Type: FLASH
Program Memory Size: 200KB (200K x 8)
Number of I/O: 48
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
термін постачання 14-28 дні (днів)
на замовлення 17598 шт - ціна та термін постачання
| SIGC12T60NCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Infineon Technologies
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Infineon Technologies
| IRF7307QTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 60000 шт - ціна та термін постачання
| IRF7307PBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 8-SOIC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N/P-CH 20V 8-SOIC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 9 шт - ціна та термін постачання
| IPB180N04S401ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 40V 180A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
на замовлення 4482 шт - ціна та термін постачання
| IPC100N04S51R9ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 40V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 9802 шт - ціна та термін постачання
| BFR92PE6327HTSA1 |
|
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Base Part Number: BFR92
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
Voltage - Collector Emitter Breakdown (Max): 15V
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 24044 шт Description: RF TRANS NPN 15V 5GHZ SOT23-3
Base Part Number: BFR92
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
Voltage - Collector Emitter Breakdown (Max): 15V
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
термін постачання 14-28 дні (днів)
на замовлення 3500 шт - ціна та термін постачання
| 1ED020I12FA2XUMA2 |
|
Виробник: Infineon Technologies
Description: IC IGBT DVR 1200V 2A DSO20
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Output Supply: 13V ~ 20V
Current - Output High, Low: 2A, 2A
Rise / Fall Time (Typ): 30ns, 50ns
Voltage - Isolation: 4500Vrms
Number of Channels: 1
Technology: Magnetic Coupling
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-DSO-20-77
Package / Case: 20-SOIC (0.295", 7.50mm Width)
на замовлення 998 шт Description: IC IGBT DVR 1200V 2A DSO20
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Output Supply: 13V ~ 20V
Current - Output High, Low: 2A, 2A
Rise / Fall Time (Typ): 30ns, 50ns
Voltage - Isolation: 4500Vrms
Number of Channels: 1
Technology: Magnetic Coupling
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-DSO-20-77
Package / Case: 20-SOIC (0.295", 7.50mm Width)
термін постачання 14-28 дні (днів)
| AUIRLR2905Z |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
на замовлення 5 шт - ціна та термін постачання
| AUIRLR2905TRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
| AUIRLR2905 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
| IRLR2905TRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
| IRLR2905CPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 36A DPAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Supplier Device Package: D-Pak
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 36A DPAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Supplier Device Package: D-Pak
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
| IRLR2905PBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 50 шт - ціна та термін постачання
| IRLR2905ZPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
| IRLR2905Z |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
| IRLR2905TRR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
| IRLR2905TRL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| IRLR2905ZTRLPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
| IRLR2905ZTRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
на замовлення 3393 шт Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
термін постачання 14-28 дні (днів)
на замовлення 150 шт - ціна та термін постачання
| IR2103STRPBF | |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 210mA, 360mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10V ~ 20V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
на замовлення 5933 шт Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 210mA, 360mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10V ~ 20V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
термін постачання 14-28 дні (днів)
на замовлення 55932 шт - ціна та термін постачання
| ITS4140NHUMA1 |
|
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -30°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -30°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
на замовлення 4368 шт - ціна та термін постачання
| IRG4BC15UD-LPBF |
|
Виробник: Infineon Technologies
Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
| TDA48632GXUMA2 |
|
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: TDA4863
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Startup: 20µA
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 150°C
Mode: Discontinuous Conduction (DCM)
на замовлення 15294 шт Description: IC PFC CTRLR DCM 8DSO
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: TDA4863
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Startup: 20µA
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 150°C
Mode: Discontinuous Conduction (DCM)
термін постачання 14-28 дні (днів)
на замовлення 4644 шт - ціна та термін постачання
| IRF5305SPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET P-CH 55V 31A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
| IRF5305L |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Part Status: Obsolete
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Part Status: Obsolete
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 2080 шт - ціна та термін постачання
| IRF5305STRRPBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET P-CH 55V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
| IRF5305PBF |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 4718 шт Description: MOSFET P-CH 55V 31A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
термін постачання 14-28 дні (днів)
на замовлення 1137 шт - ціна та термін постачання
|
| IRF540NL |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO262
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 33A TO262
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
| IRF540NSTRRPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 33A D2PAK
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 1 шт - ціна та термін постачання
| IRF540NPBF |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
на замовлення 28376 шт Description: MOSFET N-CH 100V 33A TO220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
термін постачання 14-28 дні (днів)
на замовлення 13877 шт - ціна та термін постачання
|
| IRF540NLPBF | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO262
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 33A TO262
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
| IR3556MTRPBF |
|
Виробник: Infineon Technologies
Description: IC DRIVER GATE 50A PQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Applications: Synchronous Buck Converters, Voltage Regulators
Interface: PWM
Load Type: Inductive
Current - Output / Channel: 50A
Voltage - Supply: 4.5V ~ 7V
Voltage - Load: 4.5V ~ 15V
Features: Diode Emulation, Status Flag
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Mounting Type: Surface Mount
Package / Case: 30-PowerVFQFN
Supplier Device Package: 30-PQFN (6x6)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC DRIVER GATE 50A PQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Applications: Synchronous Buck Converters, Voltage Regulators
Interface: PWM
Load Type: Inductive
Current - Output / Channel: 50A
Voltage - Supply: 4.5V ~ 7V
Voltage - Load: 4.5V ~ 15V
Features: Diode Emulation, Status Flag
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Mounting Type: Surface Mount
Package / Case: 30-PowerVFQFN
Supplier Device Package: 30-PQFN (6x6)
| IRG5U75HF06A |
|
Виробник: Infineon Technologies
Description: IGBT MOD 600V 100A 330W POWIR 34
Part Status: Obsolete
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Supplier Device Package: POWIR® 34
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Packaging: Box
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT MOD 600V 100A 330W POWIR 34
Part Status: Obsolete
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Supplier Device Package: POWIR® 34
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Packaging: Box
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
| IRG4RC10UTRPBF |
|
Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
на замовлення 5734 шт - ціна та термін постачання
| IRGR3B60KD2TRLP |
|
Виробник: Infineon Technologies
Description: IGBT 600V 7.8A 52W DPAK
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 7.8A 52W DPAK
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
| IRGR3B60KD2TRP |
|
Виробник: Infineon Technologies
Description: IGBT 600V 7.8A 52W DPAK
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 7.8A 52W DPAK
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
| IRG4RC10UDTRLP |
|
Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100Ohm, 15V
Td (on/off) @ 25°C: 40ns/87ns
Gate Charge: 15nC
Input Type: Standard
Switching Energy: 140µJ (on), 120µJ (off)
Power - Max: 38W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Current - Collector Pulsed (Icm): 34A
Current - Collector (Ic) (Max): 8.5A
Voltage - Collector Emitter Breakdown (Max): 600V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 8.5A 38W DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100Ohm, 15V
Td (on/off) @ 25°C: 40ns/87ns
Gate Charge: 15nC
Input Type: Standard
Switching Energy: 140µJ (on), 120µJ (off)
Power - Max: 38W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Current - Collector Pulsed (Icm): 34A
Current - Collector (Ic) (Max): 8.5A
Voltage - Collector Emitter Breakdown (Max): 600V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
на замовлення 18478 шт - ціна та термін постачання
| IRGS6B60KDTRLP |
|
Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
на замовлення 3828 шт - ціна та термін постачання
| IRGS10B60KDTRLP |
|
Виробник: Infineon Technologies
Description: IGBT 600V 22A 156W D2PAK
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 22A 156W D2PAK
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
на замовлення 3124 шт - ціна та термін постачання
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