Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (130637) > Сторінка 1 з 2178
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TLE9251VLEXUMA1 Код товару: 163586 |
Infineon Technologies |
 Мікросхеми > ІнтерфейсніКорпус: TSON Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP Тип монтажу: SMD Інтерфейс: CAN |
у наявності: 23 шт
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BAS140WE6327 Код товару: 117616 |
Infineon Technologies |
Діоди, діодні мости, стабілітрони > Діоди Шотткі |
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BAS140WE6327HTSA1 Код товару: 144159 |
Infineon Technologies |
Діоди, діодні мости, стабілітрони > Діоди Шотткі |
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IRGPC40UD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 40A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 160 W |
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IRGBC30UD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 23A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W |
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IRGBC20FD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 16A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V |
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IRGPF50F | Infineon Technologies |
Description: IGBT FAST 900V 51A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 900 V Power - Max: 200 W |
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IRGPC50F | Infineon Technologies |
Description: IGBT FAST 600V 70A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W |
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IRGBC40S | Infineon Technologies |
Description: IGBT STD 600V 50A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 160 W |
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IRGBC30S | Infineon Technologies |
Description: IGBT STD 600V 34A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 18A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W |
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IRGPC50UD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 55A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W |
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IRGPC50FD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 70A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W |
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IRGPC40FD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 49A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 49 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 160 W |
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IRGPC30FD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 31A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W |
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IRGBC20UD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 13A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 60 W |
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IRGBC30FD2 | Infineon Technologies |
Description: IGBT W/DIODE 600V 31A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W |
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IRGPH50F | Infineon Technologies |
Description: IGBT FAST 1200V 45A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A Supplier Device Package: TO-247AC Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W |
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IRGPH40F | Infineon Technologies |
Description: IGBT FAST 1200V 29A TO-247AC |
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IRGPF40F | Infineon Technologies |
Description: IGBT FAST 900V 31A TO-247AC |
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IRGPC50U | Infineon Technologies |
Description: IGBT UFAST 600V 55A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 200 W |
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IRGPC40U | Infineon Technologies |
Description: IGBT UFAST 600V 40A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 160 W |
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IRGPC40S | Infineon Technologies |
Description: IGBT STD 600V 50A TO-247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A Supplier Device Package: TO-247AC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 160 W |
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IRGBC40U | Infineon Technologies |
Description: IGBT UFAST 600V 40A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 160 W |
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IRGBF20F | Infineon Technologies |
Description: IGBT FAST 900V 20A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5.3A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 9 A Voltage - Collector Emitter Breakdown (Max): 900 V Power - Max: 60 W |
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IRGBC30U | Infineon Technologies |
Description: IGBT UFAST 600V 23A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W |
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IRGBC30F | Infineon Technologies |
Description: IGBT FAST 600V 31A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 100 W |
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IRGBC20U | Infineon Technologies |
Description: IGBT UFAST 600V 13A TO-220AB |
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IR2104S | Infineon Technologies |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Part Status: Obsolete DigiKey Programmable: Not Verified |
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IRSF3010 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 53mOhm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 11A Ratio - Input:Output: 1:1 Supplier Device Package: TO-220AB Fault Protection: Over Temperature, Over Voltage |
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IRF7106 | Infineon Technologies |
Description: MOSFET N/P-CH 20V 3A/2.5A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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IRF7204TR | Infineon Technologies |
Description: MOSFET P-CH 20V 5.3A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V |
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IRF7102 | Infineon Technologies |
Description: MOSFET 2N-CH 50V 2A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
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IRF7201 | Infineon Technologies |
Description: MOSFET N-CH 30V 7.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
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IR2151 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Current - Peak Output (Source, Sink): 125mA, 250mA Part Status: Obsolete DigiKey Programmable: Not Verified |
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PVR3300 | Infineon Technologies |
Description: SSR RELAY DPST-NO 180MA 0-300V Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: DPST-NO (2 Form A) x 2 Termination Style: PC Pin Load Current: 180 mA Supplier Device Package: 16-DIP Part Status: Obsolete Voltage - Load: 0 V ~ 300 V On-State Resistance (Max): 24 Ohms |
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PVT412 | Infineon Technologies |
Description: SSR RELAY SPST-NO 140MA 0-400V Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 140 mA Supplier Device Package: 6-DIP Part Status: Obsolete Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 27 Ohms |
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PVT412L | Infineon Technologies |
Description: SSR RELAY SPST-NO 120MA 0-400V Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 120 mA Supplier Device Package: 6-DIP Part Status: Obsolete Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 35 Ohms |
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PVU414 | Infineon Technologies |
Description: SSR RELAY SPST-NO 140MA 0-400V Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 140 mA Supplier Device Package: 6-DIP Voltage - Load: 0 V ~ 400 V On-State Resistance (Max): 27 Ohms |
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PVI1050 | Infineon Technologies |
Description: IC ISO PHOTOVOLTC 5/10VOUT 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads Output Type: Photovoltaic Mounting Type: Through Hole Input Type: DC Voltage - Isolation: 2500Vrms Supplier Device Package: 8-DIP Voltage - Output (Max): 5V, 10V Part Status: Obsolete Number of Channels: 1 |
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PVI5050 | Infineon Technologies |
Description: IC ISO PHOTOVOLTC 5V-OUT 8-DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads Output Type: Photovoltaic Mounting Type: Through Hole Input Type: DC Current - Output / Channel: 5µA Voltage - Isolation: 2500Vrms Supplier Device Package: 8-DIP Voltage - Output (Max): 5V Part Status: Obsolete Number of Channels: 1 |
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PVA1354 | Infineon Technologies |
Description: SSR RELAY SPST-NO 300MA 0-100V Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 300 mA Supplier Device Package: 8-DIP Modified Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 5 Ohms |
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PVA3354 | Infineon Technologies |
Description: SSR RELAY SPST-NO 130MA 0-300V Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 130 mA Supplier Device Package: 8-DIP Modified Part Status: Obsolete Voltage - Load: 0 V ~ 300 V On-State Resistance (Max): 24 Ohms |
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IRF520N | Infineon Technologies |
Description: MOSFET N-CH 100V 9.7A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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94-2304 | Infineon Technologies |
Description: MOSFET N-CH 30V 116A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
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IRL3803 | Infineon Technologies |
Description: MOSFET N-CH 30V 140A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
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IRFL4105TR | Infineon Technologies |
Description: MOSFET N-CH 55V 3.7A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
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IRLL3303TR | Infineon Technologies |
Description: MOSFET N-CH 30V 4.6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
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IRFP044N | Infineon Technologies |
Description: MOSFET N-CH 55V 53A TO247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 29A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
товар відсутній |
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IRFP054N | Infineon Technologies |
Description: MOSFET N-CH 55V 81A TO247AC Packaging: Bag Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V |
товар відсутній |
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IRFR1205 | Infineon Technologies |
Description: MOSFET N-CH 55V 44A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товар відсутній |
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94-4762 | Infineon Technologies |
Description: MOSFET N-CH 55V 27A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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IRFL4105TR | Infineon Technologies |
Description: MOSFET N-CH 55V 3.7A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
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IRFL4310TR | Infineon Technologies |
Description: MOSFET N-CH 100V 1.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V |
товар відсутній |
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IRLL2705TR | Infineon Technologies |
Description: MOSFET N-CH 55V 3.8A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V |
товар відсутній |
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IRLL3303TR | Infineon Technologies |
Description: MOSFET N-CH 30V 4.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V |
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94-2310 | Infineon Technologies |
Description: MOSFET N-CH 100V 17A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
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PVDZ172N | Infineon Technologies |
Description: SSR RELAY SPST-NO 1.5A 0-60V Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads Output Type: DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 1.5 A Supplier Device Package: 8-DIP Modified Part Status: Obsolete Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 250 MOhms |
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PVAZ172N | Infineon Technologies |
Description: SSR RELAY SPST-NO 1A 0-60V |
товар відсутній |
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PVN012 | Infineon Technologies |
Description: SSR RELAY SPST-NO 2.5A 0-20V Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 2.5 A Supplier Device Package: 6-DIP Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 100 mOhms |
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PVG612 | Infineon Technologies |
Description: SSR RELAY SPST-NO 1A 0-60V Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 1 A Supplier Device Package: 6-DIP Part Status: Obsolete Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 500 mOhms |
товар відсутній |
| TLE9251VLEXUMA1 Код товару: 163586 |
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Виробник: Infineon Technologies
Мікросхеми > Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
Мікросхеми > Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
у наявності: 23 шт
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 41 грн |
| 10+ | 38.6 грн |
| BAS140WE6327 Код товару: 117616 |
|
товар відсутній
| BAS140WE6327HTSA1 Код товару: 144159 |
|
товар відсутній
| IRGPC40UD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 40A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
Description: IGBT W/DIODE 600V 40A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
товар відсутній
| IRGBC30UD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Description: IGBT W/DIODE 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
| IRGBC20FD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Description: IGBT W/DIODE 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
товар відсутній
| IRGPF50F |
|
Виробник: Infineon Technologies
Description: IGBT FAST 900V 51A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 200 W
Description: IGBT FAST 900V 51A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 200 W
товар відсутній
| IRGPC50F |
|
Виробник: Infineon Technologies
Description: IGBT FAST 600V 70A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
Description: IGBT FAST 600V 70A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
товар відсутній
| IRGBC40S |
|
Виробник: Infineon Technologies
Description: IGBT STD 600V 50A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
Description: IGBT STD 600V 50A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
товар відсутній
| IRGBC30S |
|
Виробник: Infineon Technologies
Description: IGBT STD 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 18A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Description: IGBT STD 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 18A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
| IRGPC50UD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 55A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
Description: IGBT W/DIODE 600V 55A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
товар відсутній
| IRGPC50FD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 70A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
Description: IGBT W/DIODE 600V 70A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
товар відсутній
| IRGPC40FD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 49A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
Description: IGBT W/DIODE 600V 49A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
товар відсутній
| IRGPC30FD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 31A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Description: IGBT W/DIODE 600V 31A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
| IRGBC20UD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 60 W
Description: IGBT W/DIODE 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 60 W
товар відсутній
| IRGBC30FD2 |
|
Виробник: Infineon Technologies
Description: IGBT W/DIODE 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Description: IGBT W/DIODE 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
| IRGPH50F |
|
Виробник: Infineon Technologies
Description: IGBT FAST 1200V 45A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Supplier Device Package: TO-247AC
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Description: IGBT FAST 1200V 45A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
Supplier Device Package: TO-247AC
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
товар відсутній
| IRGPC50U |
|
Виробник: Infineon Technologies
Description: IGBT UFAST 600V 55A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
Description: IGBT UFAST 600V 55A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 27A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 200 W
товар відсутній
| IRGPC40U |
|
Виробник: Infineon Technologies
Description: IGBT UFAST 600V 40A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
Description: IGBT UFAST 600V 40A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
товар відсутній
| IRGPC40S |
|
Виробник: Infineon Technologies
Description: IGBT STD 600V 50A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
Description: IGBT STD 600V 50A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 31A
Supplier Device Package: TO-247AC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
товар відсутній
| IRGBC40U |
|
Виробник: Infineon Technologies
Description: IGBT UFAST 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
Description: IGBT UFAST 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 160 W
товар відсутній
| IRGBF20F |
|
Виробник: Infineon Technologies
Description: IGBT FAST 900V 20A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5.3A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 60 W
Description: IGBT FAST 900V 20A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5.3A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 60 W
товар відсутній
| IRGBC30U |
|
Виробник: Infineon Technologies
Description: IGBT UFAST 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Description: IGBT UFAST 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
| IRGBC30F |
|
Виробник: Infineon Technologies
Description: IGBT FAST 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
Description: IGBT FAST 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 17A
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
товар відсутній
| IR2104S | |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| IRSF3010 |
|
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 53mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220AB
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 53mOhm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 11A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-220AB
Fault Protection: Over Temperature, Over Voltage
товар відсутній
| IRF7106 |
|
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 3A/2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N/P-CH 20V 3A/2.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товар відсутній
| IRF7204TR |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 5.3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Description: MOSFET P-CH 20V 5.3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
товар відсутній
| IRF7102 |
|
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 50V 2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 50V 2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товар відсутній
| IRF7201 | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Description: MOSFET N-CH 30V 7.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.3A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
товар відсутній
| IR2151 | |
|
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 125mA, 250mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 125mA, 250mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| PVR3300 |
|
Виробник: Infineon Technologies
Description: SSR RELAY DPST-NO 180MA 0-300V
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: DPST-NO (2 Form A) x 2
Termination Style: PC Pin
Load Current: 180 mA
Supplier Device Package: 16-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
Description: SSR RELAY DPST-NO 180MA 0-300V
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: DPST-NO (2 Form A) x 2
Termination Style: PC Pin
Load Current: 180 mA
Supplier Device Package: 16-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
товар відсутній
| PVT412 | |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 140 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 140 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
товар відсутній
| PVT412L | |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
товар відсутній
| PVU414 |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 140 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
Description: SSR RELAY SPST-NO 140MA 0-400V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 140 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 27 Ohms
товар відсутній
| PVI1050 |
|
Виробник: Infineon Technologies
Description: IC ISO PHOTOVOLTC 5/10VOUT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V, 10V
Part Status: Obsolete
Number of Channels: 1
Description: IC ISO PHOTOVOLTC 5/10VOUT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Input Type: DC
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V, 10V
Part Status: Obsolete
Number of Channels: 1
товар відсутній
| PVI5050 |
|
Виробник: Infineon Technologies
Description: IC ISO PHOTOVOLTC 5V-OUT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V
Part Status: Obsolete
Number of Channels: 1
Description: IC ISO PHOTOVOLTC 5V-OUT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V
Part Status: Obsolete
Number of Channels: 1
товар відсутній
| PVA1354 |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 300MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 300 mA
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
Description: SSR RELAY SPST-NO 300MA 0-100V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 300 mA
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
товар відсутній
| PVA3354 |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 130MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 130 mA
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
Description: SSR RELAY SPST-NO 130MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 130 mA
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 24 Ohms
товар відсутній
| IRF520N |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 9.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 100V 9.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.7A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| 94-2304 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 116A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 30V 116A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
товар відсутній
| IRL3803 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Description: MOSFET N-CH 30V 140A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
товар відсутній
| IRFL4105TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
| IRLL3303TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товар відсутній
| IRFP044N |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 53A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 29A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 55V 53A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 29A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
товар відсутній
| IRFP054N | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 81A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Description: MOSFET N-CH 55V 81A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 43A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
товар відсутній
| IRFR1205 | |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| 94-4762 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
| IRFL4105TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Description: MOSFET N-CH 55V 3.7A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
товар відсутній
| IRFL4310TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Description: MOSFET N-CH 100V 1.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
товар відсутній
| IRLL2705TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 3.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Description: MOSFET N-CH 55V 3.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
товар відсутній
| IRLL3303TR |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
Description: MOSFET N-CH 30V 4.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
товар відсутній
| 94-2310 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товар відсутній
| PVDZ172N | |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.5 A
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
Description: SSR RELAY SPST-NO 1.5A 0-60V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1.5 A
Supplier Device Package: 8-DIP Modified
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 250 MOhms
товар відсутній
| PVN012 |
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Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
товар відсутній
| PVG612 | |
|
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Part Status: Obsolete
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
товар відсутній