Продукція виробника infineon technologies
Обрати Сторінку:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
254
255
256
257
258
259
260
261
262
263
264
265
266
267
268
269
270
271
272
273
274
275
276
277
278
279
280
281
282
283
284
285
286
287
288
289
290
291
292
293
294
295
296
297
298
299
300
301
302
303
304
305
306
307
308
309
310
311
312
313
314
315
316
317
318
319
320
321
322
323
324
325
326
327
328
329
330
331
332
333
334
335
336
337
338
339
340
341
342
343
344
345
346
347
348
349
350
351
352
353
354
355
356
357
358
359
360
361
362
363
364
365
366
367
368
369
370
371
372
373
374
375
376
377
378
379
380
381
382
383
384
385
386
387
388
389
390
391
392
393
394
395
396
397
398
399
400
401
402
403
404
405
406
407
408
409
410
411
412
413
414
415
416
417
418
419
420
421
422
423
424
425
426
427
428
429
430
431
432
433
434
435
436
437
438
439
440
441
442
443
444
445
446
447
448
449
450
451
452
453
454
455
456
457
458
459
460
461
462
463
464
465
466
467
468
469
470
471
472
473
474
475
476
477
478
479
480
481
482
483
484
485
486
487
488
489
490
491
492
493
494
495
496
497
498
499
500
501
502
503
504
505
506
507
508
509
510
511
512
513
514
515
516
517
518
519
520
521
522
523
524
525
526
527
528
529
530
531
532
533
534
535
536
537
538
539
540
541
542
543
544
545
546
547
548
549
550
551
552
553
554
555
556
557
558
559
560
561
562
563
564
565
566
567
568
569
570
571
572
573
574
575
576
577
578
579
580
581
582
583
584
585
586
587
588
589
590
591
592
593
594
595
596
597
598
599
600
601
602
603
604
605
606
607
608
609
610
611
612
613
614
615
616
617
618
619
620
621
622
623
624
625
626
627
628
629
630
631
632
633
634
635
636
637
638
639
640
641
642
643
644
645
646
647
648
649
650
651
652
653
654
655
656
657
658
659
660
661
662
663
664
665
666
667
668
669
670
671
672
673
674
675
676
677
678
679
680
681
682
683
684
685
686
687
688
689
690
691
692
693
694
695
696
697
698
699
700
701
702
703
704
705
706
707
708
709
710
711
712
713
714
715
716
717
718
719
720
721
722
723
724
725
726
727
728
729
730
731
732
733
734
735
736
737
738
739
740
741
742
743
744
745
746
747
748
749
750
751
752
753
754
755
756
757
758
759
760
761
762
763
764
765
766
767
768
769
770
771
772
773
774
775
776
777
778
779
780
781
782
783
784
785
786
787
788
789
790
791
792
793
794
795
796
797
798
799
[ Наступна Сторінка >> ]
Фото | Назва | Техн. інф. | Виробник | Інформація | В наявності/на замовлення | Ціна без ПДВ |
||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BAS140WE6327 Код товару: 117616 |
![]() |
Infineon Technologies |
Діоди, діодні мости, стабілітрони - Діоди Шотткі |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 15083 шт - ціна та термін постачання
|
||||||||||||||
BAS140WE6327HTSA1 Код товару: 144159 |
![]() ![]() |
Infineon Technologies |
Діоди, діодні мости, стабілітрони - Діоди Шотткі |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 58806 шт - ціна та термін постачання
|
||||||||||||||
TLE9251VLEXUMA1 Код товару: 163586 |
![]() |
Infineon Technologies |
Мікросхеми - Інтерфейсні Корпус: TSON Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP Тип монтажу: SMD Інтерфейс: CAN |
в наявності: 28 шт
|
|
|||||||||||||
![]() |
IPB123N10N3GATMA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 100V 58A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.5V @ 46µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Bulk |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 1388 шт - ціна та термін постачання
|
|||||||||||||
SAK-XC2267M-104F80L AB | Infineon Technologies |
Description: IC MCU 16BIT 100LQFP Manufacturer: Infineon Technologies Packaging: Tape & Reel (TR) Part Status: Obsolete |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||||
IFS200V12PT4BOSA1 |
![]() |
Infineon Technologies |
Description: MODULE IPM MIPAQ-3 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
![]() |
IR38363MTRPBFAUMA1 |
![]() |
Infineon Technologies |
Description: IC REG 15A 34PQFN Base Part Number: IR38363 Supplier Device Package: 34-PQFN (5x7) Package / Case: 34-PowerVFQFN Mounting Type: Surface Mount Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Infineon Technologies |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3360 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IPW60R018CFD7XKSA1 |
![]() |
Infineon Technologies |
Description: MOSFET N CH Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Current - Continuous Drain (Id) @ 25°C: 101A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 |
на замовлення 59 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
IPW60R017C7XKSA1 |
![]() |
Infineon Technologies |
Description: HIGH POWER_NEW Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 4V @ 2.91mA Power Dissipation (Max): 446W (Tc) Mounting Type: Through Hole Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V Current - Continuous Drain (Id) @ 25°C: 109A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-3 Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IPW60R037CSFDXKSA1 | Infineon Technologies |
Description: MOSFET N CH Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 1.63mA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel |
на замовлення 218 шт![]() термін постачання 14-28 дні (днів) |
|
|||||||||||||
IPW60R075CPAFKSA1 |
![]() |
Infineon Technologies |
Description: AUTOMOTIVE Part Status: Active Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
![]() |
IPW60R120P7XKSA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 600V 26A TO247-3 Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4V @ 410µA Power Dissipation (Max): 95W (Tc) |
на замовлення 1 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
IPW60R145CFD7XKSA1 |
![]() |
Infineon Technologies |
Description: MOSFET HIGH POWER Part Status: Active FET Feature: Standard Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Packaging: Tube |
на замовлення 178 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
IPW60R060P7XKSA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 600V 48A TO247-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4V @ 800µA Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IPW60R090CFD7XKSA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 600V 25A TO247-3 Part Status: Active Supplier Device Package: PG-TO247-3 Vgs(th) (Max) @ Id: 4.5V @ 570µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V |
на замовлення 199 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
SHIELDBTS500151TADTOBO1 |
![]() |
Infineon Technologies |
Description: EVAL 12V PROTECT SWITCH SHIELD Part Status: Active Utilized IC / Part: BTS50015-1TAD Contents: Board(s) Type: Power Management Function: Switch Packaging: Bulk |
на замовлення 1 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
SIDC14D120H8X1SA1 |
![]() |
Infineon Technologies |
Description: DIODE GEN PURP 1.2KV 25A WAFER Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Speed: Standard Recovery >500ns, > 200mA (Io) Current - Average Rectified (Io): 25A (DC) Supplier Device Package: Sawn on foil Diode Type: Standard Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
SRF55V10PNBX1SA3 | Infineon Technologies |
Description: IC INTELLIGENT EEPROM MCC2-2 Part Status: Active |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||||
![]() |
IPD80R2K0P7ATMA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 800V 3A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
SGP04N60XKSA1 |
![]() |
Infineon Technologies |
Description: IGBT, 9.4A, 600V, N-CHANNEL Package / Case: TO-220-3 Packaging: Tube Power - Max: 50 W Current - Collector Pulsed (Icm): 19 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 9.4 A Part Status: Obsolete Gate Charge: 24 nC Test Condition: 400V, 4A, 67Ohm, 15V Switching Energy: 131µJ Td (on/off) @ 25°C: 22ns/237ns IGBT Type: NPT Supplier Device Package: PG-TO220-3-1 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
на замовлення 11298 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
IRS2541STRPBF |
![]() |
Infineon Technologies |
Description: IC LED DRIVER CTRLR DIM 8SOIC Operating Temperature: -25°C ~ 150°C (TJ) Topology: Step-Down (Buck) Type: DC DC Controller Part Status: Obsolete Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Dimming: PWM Frequency: 500kHz Voltage - Supply (Max): 15.6V Voltage - Supply (Min): 9V Number of Outputs: 1 Internal Switch(s): No Base Part Number: IRS2541SPBF Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRS25411STRPBF |
![]() |
Infineon Technologies |
Description: IC LED DRIVER CTRLR DIM 8SOIC Part Status: Discontinued at Digi-Key Voltage - Supply (Max): 16.6V Voltage - Supply (Min): 8V Number of Outputs: 1 Internal Switch(s): No Topology: Step-Down (Buck) Type: DC DC Controller Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Base Part Number: IRS25411SPBF Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Dimming: PWM Frequency: 500kHz |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
|
IRS25411PBF |
![]() |
Infineon Technologies |
Description: IC LED DRIVER CTRLR DIM 8DIP Packaging: Tube Part Status: Obsolete Voltage - Supply (Max): 16.6V Voltage - Supply (Min): 8V Dimming: PWM Supplier Device Package: 8-PDIP Topology: Step-Down (Buck) Internal Switch(s): No Operating Temperature: -25°C ~ 150°C (TJ) Type: DC DC Controller Frequency: 500kHz Number of Outputs: 1 Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) |
на замовлення 900 шт![]() термін постачання 14-28 дні (днів)
на замовлення 870 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
IRS2541PBF |
![]() |
Infineon Technologies |
Description: IC LED DRVR CTRLR DIM 500MA 8DIP Part Status: Obsolete Voltage - Supply (Max): 15.6V Voltage - Supply (Min): 9V Dimming: PWM Supplier Device Package: 8-PDIP Topology: Step-Down (Buck) Internal Switch(s): No Operating Temperature: -25°C ~ 150°C (TJ) Type: DC DC Controller Frequency: 500kHz Number of Outputs: 1 Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 300 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
BSL307SPH6327XTSA1 |
![]() |
Infineon Technologies |
Description: MOSFET P-CH 30V 5.5A 6TSOP Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP-6-1 Package / Case: SOT-23-6 Thin, TSOT-23-6 |
на замовлення 2931 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
IPB180N04S400ATMA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO263-7-3 Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Supplier Device Package: PG-TO263-7-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) |
на замовлення 13422 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
IR2156STRPBF |
![]() |
Infineon Technologies |
Description: IC BALLAST CNTRL 44KHZ 14SOIC Base Part Number: IR2156SPBF Supplier Device Package: 14-SOIC Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C Dimming: No Current - Supply: 10mA Voltage - Supply: 10.5V ~ 16.5V Frequency: 36kHz ~ 44kHz Type: Ballast Controller Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) |
на замовлення 3537 шт![]() термін постачання 14-28 дні (днів)
на замовлення 10000 шт - ціна та термін постачання
|
|
||||||||||||
DDB2U40N12W1RFB11BPSA1 |
![]() |
Infineon Technologies |
Description: LOW POWER EASY AG-EASY1B-2311 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: AG-EASY1B-1 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 40 A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A Current - Reverse Leakage @ Vr: 116 µA @ 1200 V |
на замовлення 24 шт![]() термін постачання 14-28 дні (днів) |
|
|||||||||||||
![]() |
BSP321PH6327XTSA1 |
![]() |
Infineon Technologies |
Description: MOSFET P-CH 100V 980MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 980mA (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 380µA Supplier Device Package: PG-SOT223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V |
на замовлення 782 шт![]() термін постачання 14-28 дні (днів)
на замовлення 782 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
ICE2A0565ZHKLA1 |
![]() |
Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Part Status: Obsolete Control Features: Soft Start Voltage - Start Up: 13.5 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DIP-7-1 Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 72% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Power (Watts): 23 W |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
ICE2A0565GXUMA1 |
![]() |
Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSO Power (Watts): 23 W Part Status: Obsolete Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Packaging: Tape & Reel (TR) Control Features: Soft Start Voltage - Start Up: 13.5 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-12-10 Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 72% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
ICE2A0565FKLA1 |
![]() |
Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Power (Watts): 23 W Part Status: Obsolete Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 13.5 V Control Features: Soft Start Supplier Device Package: PG-DIP-8 Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 100kHz Duty Cycle: 72% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
AUIRFZ24NSTRR |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 17A DPAK Part Status: Obsolete Supplier Device Package: D-PAK (TO-252AA) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRFZ24NSTRLPBF |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 17A D2PAK Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
AUXCLFZ24NSTRL |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 17A D2PAK Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRFZ24NSTRL |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 17A D2PAK Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V Mounting Type: Surface Mount |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
AUIRFZ24NSTRL |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 17A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Mounting Type: Surface Mount Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 8216 шт - ціна та термін постачання
|
|||||||||||||
![]() |
TLE5009A16DE1200XUMA1 |
![]() |
Infineon Technologies |
Description: SENSOR ANGLE 360DEG SMD Part Status: Active Output Signal: Cosine, Sine Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Supplier Device Package: PG-TDSO-16 For Measuring: Angle Technology: Magnetoresistive Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Actuator Type: External Magnet, Not Included Voltage - Supply: 3V ~ 3.6V Termination Style: Gull Wing Operating Temperature: -40°C ~ 125°C Output: Analog Voltage |
на замовлення 2290 шт![]() термін постачання 14-28 дні (днів)
на замовлення 2500 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
BAS21E6327HTSA1 |
![]() |
Infineon Technologies |
Description: DIODE GEN PURP 200V 250MA SOT23 Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Current - Average Rectified (Io): 250mA (DC) Voltage - DC Reverse (Vr) (Max): 200V Diode Type: Standard Base Part Number: BAS21 Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Part Status: Last Time Buy Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Mounting Type: Surface Mount Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Reverse Leakage @ Vr: 100nA @ 200V Reverse Recovery Time (trr): 50ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 37687 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
Infineon Technologies |
Description: DIODE GP 200V 250MA SOT23-3 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOT23 Current - Average Rectified (Io): 250mA (DC) Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Capacitance @ Vr, F: 5pF @ 0V, 1MHz |
на замовлення 1097 шт![]() термін постачання 14-28 дні (днів) |
|
|||||||||||||||
![]() |
BAS2103WE6327HTSA1 |
![]() |
Infineon Technologies |
Description: DIODE GEN PURP 200V 250MA SOD323 Diode Type: Standard Part Status: Last Time Buy Base Part Number: BAS21-03W Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOD323-2 Package / Case: SC-76, SOD-323 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Current - Average Rectified (Io): 250mA (DC) Voltage - DC Reverse (Vr) (Max): 200V |
на замовлення 41943 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
Infineon Technologies |
Description: DIODE GEN PURP 200V 250MA SOD323 Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PG-SOD323-2 Current - Average Rectified (Io): 250mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Standard Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 200 V |
на замовлення 577 шт![]() термін постачання 14-28 дні (днів) |
|
|||||||||||||||
![]() |
BC857BE6327HTSA1 |
![]() |
Infineon Technologies |
Description: TRANS PNP 45V 0.1A SOT-23 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Frequency - Transition: 250MHz Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 100mA Transistor Type: PNP Part Status: Last Time Buy Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Base Part Number: BC857 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 |
на замовлення 36025 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
XMC1404Q064X0200AAXUMA1 |
![]() |
Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 64VQFN Connectivity: CANbus, I²C, LINbus, SPI, UART/USART Speed: 48MHz Core Size: 32-Bit Core Processor: ARM® Cortex®-M0 Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Supplier Device Package: PG-VQFN-64-6 Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Data Converters: A/D 12x12b Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V RAM Size: 16K x 8 Program Memory Type: FLASH Program Memory Size: 200KB (200K x 8) Number of I/O: 48 Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT |
на замовлення 1846 шт![]() термін постачання 14-28 дні (днів)
на замовлення 17598 шт - ціна та термін постачання
|
|
||||||||||||
SIGC12T60NCX7SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600V WAFER Packaging: Bulk Part Status: Obsolete IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 10A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Input Type: Standard Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 10A, 27Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Manufacturer: Infineon Technologies |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||||
![]() |
IRF7307QTRPBF |
![]() |
Infineon Technologies |
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Power - Max: 2W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 60000 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRF7307PBF |
![]() ![]() |
Infineon Technologies |
Description: MOSFET N/P-CH 20V 8-SOIC Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 700mV @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 9 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IPB180N04S401ATMA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO263-7 Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 4V @ 140µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 4482 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IPC100N04S51R9ATMA1 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 40V 100A 8TDSON-34 Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-34 Vgs(th) (Max) @ Id: 3.4V @ 50µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 9802 шт - ціна та термін постачання
|
|||||||||||||
![]() |
BFR92PE6327HTSA1 |
![]() |
Infineon Technologies |
Description: RF TRANS NPN 15V 5GHZ SOT23-3 Base Part Number: BFR92 Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Current - Collector (Ic) (Max): 45mA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Power - Max: 280mW Gain: 10.5dB ~ 16dB Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Frequency - Transition: 5GHz Voltage - Collector Emitter Breakdown (Max): 15V Transistor Type: NPN Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) |
на замовлення 24044 шт![]() термін постачання 14-28 дні (днів)
на замовлення 3500 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
1ED020I12FA2XUMA2 |
![]() |
Infineon Technologies |
Description: IC IGBT DVR 1200V 2A DSO20 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Output Supply: 13V ~ 20V Current - Output High, Low: 2A, 2A Rise / Fall Time (Typ): 30ns, 50ns Voltage - Isolation: 4500Vrms Number of Channels: 1 Technology: Magnetic Coupling Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Supplier Device Package: PG-DSO-20-77 Package / Case: 20-SOIC (0.295", 7.50mm Width) |
на замовлення 998 шт![]() термін постачання 14-28 дні (днів) |
|
||||||||||||
![]() |
AUIRLR2905Z |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5 шт - ціна та термін постачання
|
|||||||||||||
![]() |
AUIRLR2905TRL |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
AUIRLR2905 |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905TRRPBF |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905CPBF |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 36A DPAK Mounting Type: Surface Mount Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta) Supplier Device Package: D-Pak Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905PBF |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Packaging: Tube Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 50 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRLR2905ZPBF |
![]() ![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905Z |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905TRR |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905TRL |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905ZTRLPBF |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drain to Source Voltage (Vdss): 55V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 110W (Tc) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRLR2905ZTRPBF |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAK Drain to Source Voltage (Vdss): 55V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 110W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) |
на замовлення 3393 шт![]() термін постачання 14-28 дні (днів)
на замовлення 150 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
IR2103STRPBF |
![]() ![]() |
Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Rise / Fall Time (Typ): 100ns, 50ns High Side Voltage - Max (Bootstrap): 600V Input Type: Inverting, Non-Inverting Current - Peak Output (Source, Sink): 210mA, 360mA Logic Voltage - VIL, VIH: 0.8V, 3V Voltage - Supply: 10V ~ 20V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 Channel Type: Independent Driven Configuration: Half-Bridge |
на замовлення 5933 шт![]() термін постачання 14-28 дні (днів)
на замовлення 55932 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
ITS4140NHUMA1 |
![]() |
Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Supplier Device Package: PG-SOT223-4 Ratio - Input:Output: 1:1 Current - Output (Max): 200mA Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 4.9V ~ 60V Input Type: Non-Inverting Rds On (Typ): 1Ohm Output Configuration: High Side Operating Temperature: -30°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Part Status: Active Output Type: N-Channel Package / Case: TO-261-4, TO-261AA Features: Auto Restart Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 4368 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRG4BC15UD-LPBF |
![]() |
Infineon Technologies |
Description: IGBT 600V 14A 49W TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A Supplier Device Package: TO-262 Td (on/off) @ 25°C: 17ns/160ns Switching Energy: 240µJ (on), 260µJ (off) Test Condition: 480V, 7.8A, 75Ohm, 15V Gate Charge: 23 nC Part Status: Obsolete Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 42 A Power - Max: 49 W |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
TDA48632GXUMA2 |
![]() |
Infineon Technologies |
Description: IC PFC CTRLR DCM 8DSO Part Status: Active Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7) Base Part Number: TDA4863 Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Current - Startup: 20µA Voltage - Supply: 12.5V ~ 20V Operating Temperature: -40°C ~ 150°C Mode: Discontinuous Conduction (DCM) |
на замовлення 15294 шт![]() термін постачання 14-28 дні (днів)
на замовлення 4644 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
IRF5305SPBF |
![]() |
Infineon Technologies |
Description: MOSFET P-CH 55V 31A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRF5305L |
![]() |
Infineon Technologies |
Description: MOSFET P-CH 55V 31A TO262 Packaging: Tube Part Status: Obsolete Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 2080 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRF5305STRRPBF |
![]() |
Infineon Technologies |
Description: MOSFET P-CH 55V 31A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRF5305PBF |
![]() |
Infineon Technologies |
Description: MOSFET P-CH 55V 31A TO220AB Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 4718 шт![]() термін постачання 14-28 дні (днів)
на замовлення 1137 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
IRF540NL |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 100V 33A TO262 Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRF540NSTRRPBF |
![]() ![]() |
Infineon Technologies |
Description: MOSFET N-CH 100V 33A D2PAK Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 1 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRF540NPBF |
![]() |
Infineon Technologies |
Description: MOSFET N-CH 100V 33A TO220AB Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA |
на замовлення 28376 шт![]() термін постачання 14-28 дні (днів)
на замовлення 13877 шт - ціна та термін постачання
|
|
||||||||||||
![]() |
IRF540NLPBF |
![]() ![]() |
Infineon Technologies |
Description: MOSFET N-CH 100V 33A TO262 Supplier Device Package: TO-262 Vgs(th) (Max) @ Id: 4V @ 250µA FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V Power Dissipation (Max): 130W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
|
IR3556MTRPBF |
![]() |
Infineon Technologies |
Description: IC DRIVER GATE 50A PQFN Packaging: Cut Tape (CT) Part Status: Obsolete Applications: Synchronous Buck Converters, Voltage Regulators Interface: PWM Load Type: Inductive Current - Output / Channel: 50A Voltage - Supply: 4.5V ~ 7V Voltage - Load: 4.5V ~ 15V Features: Diode Emulation, Status Flag Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO Mounting Type: Surface Mount Package / Case: 30-PowerVFQFN Supplier Device Package: 30-PQFN (6x6) |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
IRG5U75HF06A |
![]() |
Infineon Technologies |
Description: IGBT MOD 600V 100A 330W POWIR 34 Part Status: Obsolete Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Supplier Device Package: POWIR® 34 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: POWIR® 34 Module Packaging: Box Power - Max: 330 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A |
товар відсутній, Ви можете зробити запит додавши товар у кошик | ||||||||||||||
![]() |
IRG4RC10UTRPBF |
![]() |
Infineon Technologies |
Description: IGBT 600V 8.5A 38W DPAK Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8.5A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Power - Max: 38W Switching Energy: 80µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 15nC Td (on/off) @ 25°C: 19ns/116ns Test Condition: 480V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5734 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRGR3B60KD2TRLP |
![]() |
Infineon Technologies |
Description: IGBT 600V 7.8A 52W DPAK IGBT Type: NPT Supplier Device Package: D-Pak Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A Reverse Recovery Time (trr): 77 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 52 W Current - Collector Pulsed (Icm): 15.6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7.8 A Part Status: Obsolete Gate Charge: 13 nC Test Condition: 400V, 3A, 100Ohm, 15V Switching Energy: 62µJ (on), 39µJ (off) Td (on/off) @ 25°C: 18ns/110ns |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRGR3B60KD2TRP |
![]() |
Infineon Technologies |
Description: IGBT 600V 7.8A 52W DPAK Reverse Recovery Time (trr): 77 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 52 W Current - Collector Pulsed (Icm): 15.6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7.8 A Part Status: Obsolete Gate Charge: 13 nC Test Condition: 400V, 3A, 100Ohm, 15V Switching Energy: 62µJ (on), 39µJ (off) Td (on/off) @ 25°C: 18ns/110ns IGBT Type: NPT Supplier Device Package: D-Pak Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A |
товар відсутній, Ви можете зробити запит додавши товар у кошик | |||||||||||||
![]() |
IRG4RC10UDTRLP |
![]() |
Infineon Technologies |
Description: IGBT 600V 8.5A 38W DPAK Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Reverse Recovery Time (trr): 28ns Test Condition: 480V, 5A, 100Ohm, 15V Td (on/off) @ 25°C: 40ns/87ns Gate Charge: 15nC Input Type: Standard Switching Energy: 140µJ (on), 120µJ (off) Power - Max: 38W Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A Current - Collector Pulsed (Icm): 34A Current - Collector (Ic) (Max): 8.5A Voltage - Collector Emitter Breakdown (Max): 600V Part Status: Obsolete Packaging: Tape & Reel (TR) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 18478 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRGS6B60KDTRLP |
![]() |
Infineon Technologies |
Description: IGBT 600V 13A 90W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3828 шт - ціна та термін постачання
|
|||||||||||||
![]() |
IRGS10B60KDTRLP |
![]() |
Infineon Technologies |
Description: IGBT 600V 22A 156W D2PAK Td (on/off) @ 25°C: 30ns/230ns IGBT Type: NPT Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A Reverse Recovery Time (trr): 90 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Power - Max: 156 W Current - Collector Pulsed (Icm): 44 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 22 A Part Status: Obsolete Gate Charge: 38 nC Test Condition: 400V, 10A, 47Ohm, 15V Switching Energy: 140µJ (on), 250µJ (off) |
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3124 шт - ціна та термін постачання
|
TLE9251VLEXUMA1 Код товару: 163586 |
![]() |
Виробник: Infineon Technologies
Мікросхеми - Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
25 шт - склад КиївМікросхеми - Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
3 шт - РАДІОМАГ-Дніпро
|
IPB123N10N3GATMA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 1388 шт - ціна та термін постачання
SAK-XC2267M-104F80L AB |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Manufacturer: Infineon Technologies
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC MCU 16BIT 100LQFP
Manufacturer: Infineon Technologies
Packaging: Tape & Reel (TR)
Part Status: Obsolete
IFS200V12PT4BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: MODULE IPM MIPAQ-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MODULE IPM MIPAQ-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
IR38363MTRPBFAUMA1 |
![]() |

Виробник: Infineon Technologies
Description: IC REG 15A 34PQFN
Base Part Number: IR38363
Supplier Device Package: 34-PQFN (5x7)
Package / Case: 34-PowerVFQFN
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Infineon Technologies
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC REG 15A 34PQFN
Base Part Number: IR38363
Supplier Device Package: 34-PQFN (5x7)
Package / Case: 34-PowerVFQFN
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Infineon Technologies
на замовлення 3360 шт - ціна та термін постачання
IPW60R018CFD7XKSA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
на замовлення 59 шт Description: MOSFET N CH
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3

термін постачання 14-28 дні (днів)
|
IPW60R017C7XKSA1 |
![]() |

Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
IPW60R037CSFDXKSA1 |

Виробник: Infineon Technologies
Description: MOSFET N CH
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
на замовлення 218 шт Description: MOSFET N CH
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel

термін постачання 14-28 дні (днів)
|
IPW60R075CPAFKSA1 |
![]() |
IPW60R120P7XKSA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
на замовлення 1 шт Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)

термін постачання 14-28 дні (днів)
|
IPW60R145CFD7XKSA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET HIGH POWER
Part Status: Active
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Tube
на замовлення 178 шт Description: MOSFET HIGH POWER
Part Status: Active
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Tube

термін постачання 14-28 дні (днів)
|
IPW60R060P7XKSA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 600V 48A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
IPW60R090CFD7XKSA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO247-3
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 199 шт Description: MOSFET N-CH 600V 25A TO247-3
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V

термін постачання 14-28 дні (днів)
|
SHIELDBTS500151TADTOBO1 |
![]() |

Виробник: Infineon Technologies
Description: EVAL 12V PROTECT SWITCH SHIELD
Part Status: Active
Utilized IC / Part: BTS50015-1TAD
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
на замовлення 1 шт Description: EVAL 12V PROTECT SWITCH SHIELD
Part Status: Active
Utilized IC / Part: BTS50015-1TAD
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk

термін постачання 14-28 дні (днів)
SIDC14D120H8X1SA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 25A (DC)
Supplier Device Package: Sawn on foil
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: DIODE GEN PURP 1.2KV 25A WAFER
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 25A (DC)
Supplier Device Package: Sawn on foil
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
SRF55V10PNBX1SA3 |
IPD80R2K0P7ATMA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
SGP04N60XKSA1 |
![]() |

Виробник: Infineon Technologies
Description: IGBT, 9.4A, 600V, N-CHANNEL
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 50 W
Current - Collector Pulsed (Icm): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9.4 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 4A, 67Ohm, 15V
Switching Energy: 131µJ
Td (on/off) @ 25°C: 22ns/237ns
IGBT Type: NPT
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 11298 шт Description: IGBT, 9.4A, 600V, N-CHANNEL
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 50 W
Current - Collector Pulsed (Icm): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9.4 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 4A, 67Ohm, 15V
Switching Energy: 131µJ
Td (on/off) @ 25°C: 22ns/237ns
IGBT Type: NPT
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole

термін постачання 14-28 дні (днів)
|
IRS2541STRPBF |
![]() |

Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8SOIC
Operating Temperature: -25°C ~ 150°C (TJ)
Topology: Step-Down (Buck)
Type: DC DC Controller
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Dimming: PWM
Frequency: 500kHz
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Number of Outputs: 1
Internal Switch(s): No
Base Part Number: IRS2541SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC LED DRIVER CTRLR DIM 8SOIC
Operating Temperature: -25°C ~ 150°C (TJ)
Topology: Step-Down (Buck)
Type: DC DC Controller
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Dimming: PWM
Frequency: 500kHz
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Number of Outputs: 1
Internal Switch(s): No
Base Part Number: IRS2541SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
IRS25411STRPBF |
![]() |

Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8SOIC
Part Status: Discontinued at Digi-Key
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Number of Outputs: 1
Internal Switch(s): No
Topology: Step-Down (Buck)
Type: DC DC Controller
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: IRS25411SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Dimming: PWM
Frequency: 500kHz
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC LED DRIVER CTRLR DIM 8SOIC
Part Status: Discontinued at Digi-Key
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Number of Outputs: 1
Internal Switch(s): No
Topology: Step-Down (Buck)
Type: DC DC Controller
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: IRS25411SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Dimming: PWM
Frequency: 500kHz
IRS25411PBF |
![]() |
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8DIP
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
на замовлення 900 шт Description: IC LED DRIVER CTRLR DIM 8DIP
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)

термін постачання 14-28 дні (днів)
на замовлення 870 шт - ціна та термін постачання
IRS2541PBF |
![]() |

Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR DIM 500MA 8DIP
Part Status: Obsolete
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 300 шт Description: IC LED DRVR CTRLR DIM 500MA 8DIP
Part Status: Obsolete
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube

термін постачання 14-28 дні (днів)
BSL307SPH6327XTSA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A 6TSOP
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP-6-1
Package / Case: SOT-23-6 Thin, TSOT-23-6
на замовлення 2931 шт Description: MOSFET P-CH 30V 5.5A 6TSOP
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP-6-1
Package / Case: SOT-23-6 Thin, TSOT-23-6

термін постачання 14-28 дні (днів)
IPB180N04S400ATMA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7-3
Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
на замовлення 13422 шт Description: MOSFET N-CH 40V 180A TO263-7-3
Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)

термін постачання 14-28 дні (днів)
IR2156STRPBF |
![]() |

Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 44KHZ 14SOIC
Base Part Number: IR2156SPBF
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Dimming: No
Current - Supply: 10mA
Voltage - Supply: 10.5V ~ 16.5V
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 3537 шт Description: IC BALLAST CNTRL 44KHZ 14SOIC
Base Part Number: IR2156SPBF
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Dimming: No
Current - Supply: 10mA
Voltage - Supply: 10.5V ~ 16.5V
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)

термін постачання 14-28 дні (днів)
на замовлення 10000 шт - ціна та термін постачання
DDB2U40N12W1RFB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
на замовлення 24 шт Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V

термін постачання 14-28 дні (днів)
|
BSP321PH6327XTSA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 782 шт Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V

термін постачання 14-28 дні (днів)
на замовлення 782 шт - ціна та термін постачання
ICE2A0565ZHKLA1 |
![]() |

Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 23 W
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 23 W
ICE2A0565GXUMA1 |
![]() |

Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 23 W
Part Status: Obsolete
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-10
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 23 W
Part Status: Obsolete
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-10
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
ICE2A0565FKLA1 |
![]() |

Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 23 W
Part Status: Obsolete
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 23 W
Part Status: Obsolete
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
AUIRFZ24NSTRR |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Part Status: Obsolete
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A DPAK
Part Status: Obsolete
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
IRFZ24NSTRLPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A D2PAK
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
AUXCLFZ24NSTRL |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
IRFZ24NSTRL |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Mounting Type: Surface Mount
AUIRFZ24NSTRL |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 17A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
на замовлення 8216 шт - ціна та термін постачання
TLE5009A16DE1200XUMA1 |
![]() |

Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
на замовлення 2290 шт Description: SENSOR ANGLE 360DEG SMD
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage

термін постачання 14-28 дні (днів)
на замовлення 2500 шт - ціна та термін постачання
|
BAS21E6327HTSA1 |
![]() |

Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Base Part Number: BAS21
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 37687 шт Description: DIODE GEN PURP 200V 250MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Base Part Number: BAS21
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)

термін постачання 14-28 дні (днів)
на замовлення 1097 шт - ціна та термін постачання
BAS21E6327HTSA1 |
![]() |

Виробник: Infineon Technologies
Description: DIODE GP 200V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
на замовлення 1097 шт Description: DIODE GP 200V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz

термін постачання 14-28 дні (днів)
на замовлення 37687 шт - ціна та термін постачання
|
BAS2103WE6327HTSA1 |
![]() |

Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOD323
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: BAS21-03W
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Package / Case: SC-76, SOD-323
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
на замовлення 41943 шт Description: DIODE GEN PURP 200V 250MA SOD323
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: BAS21-03W
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Package / Case: SC-76, SOD-323
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V

термін постачання 14-28 дні (днів)
на замовлення 577 шт - ціна та термін постачання
BAS2103WE6327HTSA1 |
![]() |

Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 577 шт Description: DIODE GEN PURP 200V 250MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V

термін постачання 14-28 дні (днів)
на замовлення 41943 шт - ціна та термін постачання
|
BC857BE6327HTSA1 |
![]() |

Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 250MHz
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: BC857
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 36025 шт Description: TRANS PNP 45V 0.1A SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 250MHz
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: BC857
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

термін постачання 14-28 дні (днів)
XMC1404Q064X0200AAXUMA1 |
![]() |

Виробник: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64VQFN
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Speed: 48MHz
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-VQFN-64-6
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Data Converters: A/D 12x12b
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
RAM Size: 16K x 8
Program Memory Type: FLASH
Program Memory Size: 200KB (200K x 8)
Number of I/O: 48
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
на замовлення 1846 шт Description: IC MCU 32BIT 200KB FLASH 64VQFN
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Speed: 48MHz
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-VQFN-64-6
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Data Converters: A/D 12x12b
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
RAM Size: 16K x 8
Program Memory Type: FLASH
Program Memory Size: 200KB (200K x 8)
Number of I/O: 48
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT

термін постачання 14-28 дні (днів)
на замовлення 17598 шт - ціна та термін постачання
SIGC12T60NCX7SA1 |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Infineon Technologies
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Infineon Technologies
IRF7307QTRPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 60000 шт - ціна та термін постачання
IRF7307PBF | ![]() |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 8-SOIC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N/P-CH 20V 8-SOIC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
на замовлення 9 шт - ціна та термін постачання
IPB180N04S401ATMA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 40V 180A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
на замовлення 4482 шт - ціна та термін постачання
IPC100N04S51R9ATMA1 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 40V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 9802 шт - ціна та термін постачання
BFR92PE6327HTSA1 |
![]() |

Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Base Part Number: BFR92
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
Voltage - Collector Emitter Breakdown (Max): 15V
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 24044 шт Description: RF TRANS NPN 15V 5GHZ SOT23-3
Base Part Number: BFR92
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
Voltage - Collector Emitter Breakdown (Max): 15V
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)

термін постачання 14-28 дні (днів)
на замовлення 3500 шт - ціна та термін постачання
1ED020I12FA2XUMA2 |
![]() |

Виробник: Infineon Technologies
Description: IC IGBT DVR 1200V 2A DSO20
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Output Supply: 13V ~ 20V
Current - Output High, Low: 2A, 2A
Rise / Fall Time (Typ): 30ns, 50ns
Voltage - Isolation: 4500Vrms
Number of Channels: 1
Technology: Magnetic Coupling
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-DSO-20-77
Package / Case: 20-SOIC (0.295", 7.50mm Width)
на замовлення 998 шт Description: IC IGBT DVR 1200V 2A DSO20
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Output Supply: 13V ~ 20V
Current - Output High, Low: 2A, 2A
Rise / Fall Time (Typ): 30ns, 50ns
Voltage - Isolation: 4500Vrms
Number of Channels: 1
Technology: Magnetic Coupling
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-DSO-20-77
Package / Case: 20-SOIC (0.295", 7.50mm Width)

термін постачання 14-28 дні (днів)
AUIRLR2905Z |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
на замовлення 5 шт - ціна та термін постачання
AUIRLR2905TRL |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
AUIRLR2905 |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
IRLR2905TRRPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
IRLR2905CPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 36A DPAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Supplier Device Package: D-Pak
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 36A DPAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Supplier Device Package: D-Pak
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
IRLR2905PBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 50 шт - ціна та термін постачання
IRLR2905ZPBF | ![]() |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
IRLR2905Z |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
IRLR2905TRR |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
IRLR2905TRL |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
IRLR2905ZTRLPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
IRLR2905ZTRPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
на замовлення 3393 шт Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)

термін постачання 14-28 дні (днів)
на замовлення 150 шт - ціна та термін постачання
IR2103STRPBF | ![]() |
![]() |

Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 210mA, 360mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10V ~ 20V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
на замовлення 5933 шт Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 210mA, 360mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10V ~ 20V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge

термін постачання 14-28 дні (днів)
на замовлення 55932 шт - ціна та термін постачання
ITS4140NHUMA1 |
![]() |

Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -30°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -30°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
на замовлення 4368 шт - ціна та термін постачання
IRG4BC15UD-LPBF |
![]() |

Виробник: Infineon Technologies
Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
TDA48632GXUMA2 |
![]() |

Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: TDA4863
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Startup: 20µA
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 150°C
Mode: Discontinuous Conduction (DCM)
на замовлення 15294 шт Description: IC PFC CTRLR DCM 8DSO
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: TDA4863
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Startup: 20µA
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 150°C
Mode: Discontinuous Conduction (DCM)

термін постачання 14-28 дні (днів)
на замовлення 4644 шт - ціна та термін постачання
IRF5305SPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET P-CH 55V 31A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
IRF5305L |
![]() |

Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Part Status: Obsolete
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Part Status: Obsolete
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 2080 шт - ціна та термін постачання
IRF5305STRRPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET P-CH 55V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
IRF5305PBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 4718 шт Description: MOSFET P-CH 55V 31A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)

термін постачання 14-28 дні (днів)
на замовлення 1137 шт - ціна та термін постачання
|
IRF540NL |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO262
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 33A TO262
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
IRF540NSTRRPBF | ![]() |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 33A D2PAK
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
на замовлення 1 шт - ціна та термін постачання
IRF540NPBF |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
на замовлення 28376 шт Description: MOSFET N-CH 100V 33A TO220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA

термін постачання 14-28 дні (днів)
на замовлення 13877 шт - ціна та термін постачання
|
IRF540NLPBF | ![]() |
![]() |

Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO262
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: MOSFET N-CH 100V 33A TO262
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
IR3556MTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC DRIVER GATE 50A PQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Applications: Synchronous Buck Converters, Voltage Regulators
Interface: PWM
Load Type: Inductive
Current - Output / Channel: 50A
Voltage - Supply: 4.5V ~ 7V
Voltage - Load: 4.5V ~ 15V
Features: Diode Emulation, Status Flag
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Mounting Type: Surface Mount
Package / Case: 30-PowerVFQFN
Supplier Device Package: 30-PQFN (6x6)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IC DRIVER GATE 50A PQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Applications: Synchronous Buck Converters, Voltage Regulators
Interface: PWM
Load Type: Inductive
Current - Output / Channel: 50A
Voltage - Supply: 4.5V ~ 7V
Voltage - Load: 4.5V ~ 15V
Features: Diode Emulation, Status Flag
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Mounting Type: Surface Mount
Package / Case: 30-PowerVFQFN
Supplier Device Package: 30-PQFN (6x6)
IRG5U75HF06A |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 600V 100A 330W POWIR 34
Part Status: Obsolete
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Supplier Device Package: POWIR® 34
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Packaging: Box
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT MOD 600V 100A 330W POWIR 34
Part Status: Obsolete
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Supplier Device Package: POWIR® 34
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Packaging: Box
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
IRG4RC10UTRPBF |
![]() |

Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
на замовлення 5734 шт - ціна та термін постачання
IRGR3B60KD2TRLP |
![]() |

Виробник: Infineon Technologies
Description: IGBT 600V 7.8A 52W DPAK
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 7.8A 52W DPAK
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IRGR3B60KD2TRP |
![]() |

Виробник: Infineon Technologies
Description: IGBT 600V 7.8A 52W DPAK
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 7.8A 52W DPAK
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
IRG4RC10UDTRLP |
![]() |

Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100Ohm, 15V
Td (on/off) @ 25°C: 40ns/87ns
Gate Charge: 15nC
Input Type: Standard
Switching Energy: 140µJ (on), 120µJ (off)
Power - Max: 38W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Current - Collector Pulsed (Icm): 34A
Current - Collector (Ic) (Max): 8.5A
Voltage - Collector Emitter Breakdown (Max): 600V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 8.5A 38W DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100Ohm, 15V
Td (on/off) @ 25°C: 40ns/87ns
Gate Charge: 15nC
Input Type: Standard
Switching Energy: 140µJ (on), 120µJ (off)
Power - Max: 38W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Current - Collector Pulsed (Icm): 34A
Current - Collector (Ic) (Max): 8.5A
Voltage - Collector Emitter Breakdown (Max): 600V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
на замовлення 18478 шт - ціна та термін постачання
IRGS6B60KDTRLP |
![]() |

Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
на замовлення 3828 шт - ціна та термін постачання
IRGS10B60KDTRLP |
![]() |

Виробник: Infineon Technologies
Description: IGBT 600V 22A 156W D2PAK
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
товар відсутній, Ви можете зробити запит додавши товар у кошикDescription: IGBT 600V 22A 156W D2PAK
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
на замовлення 3124 шт - ціна та термін постачання
Обрати Сторінку:
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
254
255
256
257
258
259
260
261
262
263
264
265
266
267
268
269
270
271
272
273
274
275
276
277
278
279
280
281
282
283
284
285
286
287
288
289
290
291
292
293
294
295
296
297
298
299
300
301
302
303
304
305
306
307
308
309
310
311
312
313
314
315
316
317
318
319
320
321
322
323
324
325
326
327
328
329
330
331
332
333
334
335
336
337
338
339
340
341
342
343
344
345
346
347
348
349
350
351
352
353
354
355
356
357
358
359
360
361
362
363
364
365
366
367
368
369
370
371
372
373
374
375
376
377
378
379
380
381
382
383
384
385
386
387
388
389
390
391
392
393
394
395
396
397
398
399
400
401
402
403
404
405
406
407
408
409
410
411
412
413
414
415
416
417
418
419
420
421
422
423
424
425
426
427
428
429
430
431
432
433
434
435
436
437
438
439
440
441
442
443
444
445
446
447
448
449
450
451
452
453
454
455
456
457
458
459
460
461
462
463
464
465
466
467
468
469
470
471
472
473
474
475
476
477
478
479
480
481
482
483
484
485
486
487
488
489
490
491
492
493
494
495
496
497
498
499
500
501
502
503
504
505
506
507
508
509
510
511
512
513
514
515
516
517
518
519
520
521
522
523
524
525
526
527
528
529
530
531
532
533
534
535
536
537
538
539
540
541
542
543
544
545
546
547
548
549
550
551
552
553
554
555
556
557
558
559
560
561
562
563
564
565
566
567
568
569
570
571
572
573
574
575
576
577
578
579
580
581
582
583
584
585
586
587
588
589
590
591
592
593
594
595
596
597
598
599
600
601
602
603
604
605
606
607
608
609
610
611
612
613
614
615
616
617
618
619
620
621
622
623
624
625
626
627
628
629
630
631
632
633
634
635
636
637
638
639
640
641
642
643
644
645
646
647
648
649
650
651
652
653
654
655
656
657
658
659
660
661
662
663
664
665
666
667
668
669
670
671
672
673
674
675
676
677
678
679
680
681
682
683
684
685
686
687
688
689
690
691
692
693
694
695
696
697
698
699
700
701
702
703
704
705
706
707
708
709
710
711
712
713
714
715
716
717
718
719
720
721
722
723
724
725
726
727
728
729
730
731
732
733
734
735
736
737
738
739
740
741
742
743
744
745
746
747
748
749
750
751
752
753
754
755
756
757
758
759
760
761
762
763
764
765
766
767
768
769
770
771
772
773
774
775
776
777
778
779
780
781
782
783
784
785
786
787
788
789
790
791
792
793
794
795
796
797
798
799
[ Наступна Сторінка >> ]