Продукція виробника infineon technologies

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Фото Назва Техн. інф. Виробник Інформація В наявності/на замовлення
Ціна
без ПДВ
BAS140WE6327
Код товару: 117616
INFNS11688-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Infineon Technologies Діоди, діодні мости, стабілітрони - Діоди Шотткі
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 15083 шт - ціна та термін постачання
BAS140WE6327HTSA1
Код товару: 144159
INFNS19700-1.pdf?t.download=true&u=5oefqw bas40_bas140series.pdf?folderId=db3a30431400ef68011425f1ca2505e3&fileId=db3a304314dca389011518a57ed20e11 Infineon Technologies Діоди, діодні мости, стабілітрони - Діоди Шотткі
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 58806 шт - ціна та термін постачання
TLE9251VLEXUMA1
Код товару: 163586
Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b Infineon Technologies Мікросхеми - Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
в наявності: 28 шт
  • 25 шт - склад Київ
  • 3 шт - РАДІОМАГ-Дніпро
1+ 37 грн
10+ 35 грн
IPB123N10N3GATMA1 IPB123N10N3GATMA1 Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e Infineon Technologies Description: MOSFET N-CH 100V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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на замовлення 1388 шт - ціна та термін постачання
SAK-XC2267M-104F80L AB Infineon Technologies Description: IC MCU 16BIT 100LQFP
Manufacturer: Infineon Technologies
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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IFS200V12PT4BOSA1 Infineon-IFS200V12PT4-DS-v02_01-en.pdf?fileId=db3a30432a40a650012a461a9c8b2b52 Infineon Technologies Description: MODULE IPM MIPAQ-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
товар відсутній, Ви можете зробити запит додавши товар у кошик
IR38363MTRPBFAUMA1 IR38363MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c Infineon Technologies Description: IC REG 15A 34PQFN
Base Part Number: IR38363
Supplier Device Package: 34-PQFN (5x7)
Package / Case: 34-PowerVFQFN
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Infineon Technologies
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3360 шт - ціна та термін постачання
IPW60R018CFD7XKSA1 IPW60R018CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Infineon Technologies Description: MOSFET N CH
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
на замовлення 59 шт
термін постачання 14-28 дні (днів)
1+ 1716.68 грн
10+ 1524.52 грн
IPW60R017C7XKSA1 IPW60R017C7XKSA1 Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8 Infineon Technologies Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
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IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1 Infineon Technologies Description: MOSFET N CH
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
на замовлення 218 шт
термін постачання 14-28 дні (днів)
1+ 844.62 грн
10+ 747.73 грн
100+ 645.72 грн
IPW60R075CPAFKSA1 IPW60R075CPA_Rev2.0_2010-02-15.pdf Infineon Technologies Description: AUTOMOTIVE
Part Status: Active
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошик
IPW60R120P7XKSA1 IPW60R120P7XKSA1 Infineon-IPW60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf045c0225 Infineon Technologies Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
на замовлення 1 шт
термін постачання 14-28 дні (днів)
1+ 380.83 грн
IPW60R145CFD7XKSA1 IPW60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Infineon Technologies Description: MOSFET HIGH POWER
Part Status: Active
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Tube
на замовлення 178 шт
термін постачання 14-28 дні (днів)
1+ 374.3 грн
10+ 323.76 грн
100+ 265.29 грн
IPW60R060P7XKSA1 IPW60R060P7XKSA1 Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c Infineon Technologies Description: MOSFET N-CH 600V 48A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IPW60R090CFD7XKSA1 IPW60R090CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Infineon Technologies Description: MOSFET N-CH 600V 25A TO247-3
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 199 шт
термін постачання 14-28 дні (днів)
1+ 496.45 грн
10+ 432.02 грн
100+ 357.69 грн
SHIELDBTS500151TADTOBO1 SHIELDBTS500151TADTOBO1 Infineon-Protected_Switch_Shield_with_BTS50015-1TAD_for_Arduino-GS-v01_00-EN.pdf?fileId=5546d462580663ef01583e4e1c0d1844 Infineon Technologies Description: EVAL 12V PROTECT SWITCH SHIELD
Part Status: Active
Utilized IC / Part: BTS50015-1TAD
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
на замовлення 1 шт
термін постачання 14-28 дні (днів)
SIDC14D120H8X1SA1 Infineon-SIDC14D120H8_L4055C-DS-v02_01-en.pdf?fileId=db3a304333b8a7ca0133c6b1701d6173 Infineon Technologies Description: DIODE GEN PURP 1.2KV 25A WAFER
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 25A (DC)
Supplier Device Package: Sawn on foil
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
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SRF55V10PNBX1SA3 Infineon Technologies Description: IC INTELLIGENT EEPROM MCC2-2
Part Status: Active
товар відсутній, Ви можете зробити запит додавши товар у кошик
IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a Infineon Technologies Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
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SGP04N60XKSA1 SGP04N60XKSA1 SGx04N60.pdf Infineon Technologies Description: IGBT, 9.4A, 600V, N-CHANNEL
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 50 W
Current - Collector Pulsed (Icm): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9.4 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 4A, 67Ohm, 15V
Switching Energy: 131µJ
Td (on/off) @ 25°C: 22ns/237ns
IGBT Type: NPT
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 11298 шт
термін постачання 14-28 дні (днів)
293+ 64.74 грн
IRS2541STRPBF IRS2541STRPBF IRS254(0,1)(S)PbF.pdf Infineon Technologies Description: IC LED DRIVER CTRLR DIM 8SOIC
Operating Temperature: -25°C ~ 150°C (TJ)
Topology: Step-Down (Buck)
Type: DC DC Controller
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Dimming: PWM
Frequency: 500kHz
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Number of Outputs: 1
Internal Switch(s): No
Base Part Number: IRS2541SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошик
IRS25411STRPBF IRS25411STRPBF irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826 Infineon Technologies Description: IC LED DRIVER CTRLR DIM 8SOIC
Part Status: Discontinued at Digi-Key
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Number of Outputs: 1
Internal Switch(s): No
Topology: Step-Down (Buck)
Type: DC DC Controller
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: IRS25411SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Dimming: PWM
Frequency: 500kHz
товар відсутній, Ви можете зробити запит додавши товар у кошик
IRS25411PBF IRS25411PBF irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826 Infineon Technologies Description: IC LED DRIVER CTRLR DIM 8DIP
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
на замовлення 900 шт
термін постачання 14-28 дні (днів)
на замовлення 870 шт - ціна та термін постачання
IRS2541PBF IRS2541PBF IRS254(0,1)(S)PbF.pdf Infineon Technologies Description: IC LED DRVR CTRLR DIM 500MA 8DIP
Part Status: Obsolete
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 300 шт
термін постачання 14-28 дні (днів)
BSL307SPH6327XTSA1 BSL307SPH6327XTSA1 Infineon-BSL307SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142dca7f3721687 Infineon Technologies Description: MOSFET P-CH 30V 5.5A 6TSOP
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP-6-1
Package / Case: SOT-23-6 Thin, TSOT-23-6
на замовлення 2931 шт
термін постачання 14-28 дні (днів)
IPB180N04S400ATMA1 IPB180N04S400ATMA1 Infineon-IPB180N04S4_00-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c3debd55d57&ack=t Infineon Technologies Description: MOSFET N-CH 40V 180A TO263-7-3
Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
на замовлення 13422 шт
термін постачання 14-28 дні (днів)
IR2156STRPBF IR2156STRPBF ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 Infineon Technologies Description: IC BALLAST CNTRL 44KHZ 14SOIC
Base Part Number: IR2156SPBF
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Dimming: No
Current - Supply: 10mA
Voltage - Supply: 10.5V ~ 16.5V
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 3537 шт
термін постачання 14-28 дні (днів)
на замовлення 10000 шт - ціна та термін постачання
DDB2U40N12W1RFB11BPSA1 Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c Infineon Technologies Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
на замовлення 24 шт
термін постачання 14-28 дні (днів)
1+ 5131.09 грн
BSP321PH6327XTSA1 BSP321PH6327XTSA1 Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39 Infineon Technologies Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 782 шт
термін постачання 14-28 дні (днів)
на замовлення 782 шт - ціна та термін постачання
ICE2A0565ZHKLA1 ICE2A0565ZHKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Infineon Technologies Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 23 W
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ICE2A0565GXUMA1 ICE2A0565GXUMA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Infineon Technologies Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 23 W
Part Status: Obsolete
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-10
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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ICE2A0565FKLA1 ICE2A0565FKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Infineon Technologies Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 23 W
Part Status: Obsolete
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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AUIRFZ24NSTRR AUIRFZ24NSTRR auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd Infineon Technologies Description: MOSFET N-CH 55V 17A DPAK
Part Status: Obsolete
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IRFZ24NSTRLPBF IRFZ24NSTRLPBF irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9 Infineon Technologies Description: MOSFET N-CH 55V 17A D2PAK
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
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AUXCLFZ24NSTRL AUXCLFZ24NSTRL irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9 Infineon Technologies Description: MOSFET N-CH 55V 17A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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IRFZ24NSTRL IRFZ24NSTRL irfz24ns.pdf Infineon Technologies Description: MOSFET N-CH 55V 17A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Mounting Type: Surface Mount
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AUIRFZ24NSTRL AUIRFZ24NSTRL auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd Infineon Technologies Description: MOSFET N-CH 55V 17A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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на замовлення 8216 шт - ціна та термін постачання
TLE5009A16DE1200XUMA1 TLE5009A16DE1200XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Infineon Technologies Description: SENSOR ANGLE 360DEG SMD
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
на замовлення 2290 шт
термін постачання 14-28 дні (днів)
на замовлення 2500 шт - ціна та термін постачання
1+ 600.31 грн
5+ 506.87 грн
10+ 456.17 грн
25+ 380.57 грн
50+ 352.02 грн
100+ 330.92 грн
BAS21E6327HTSA1 BAS21E6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Infineon Technologies Description: DIODE GEN PURP 200V 250MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Base Part Number: BAS21
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 37687 шт
термін постачання 14-28 дні (днів)
Infineon Technologies Description: DIODE GP 200V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
на замовлення 1097 шт
термін постачання 14-28 дні (днів)
3+ 23.52 грн
10+ 18.37 грн
100+ 9.72 грн
500+ 6 грн
1000+ 4.08 грн
BAS2103WE6327HTSA1 BAS2103WE6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Infineon Technologies Description: DIODE GEN PURP 200V 250MA SOD323
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: BAS21-03W
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Package / Case: SC-76, SOD-323
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
на замовлення 41943 шт
термін постачання 14-28 дні (днів)
Infineon Technologies Description: DIODE GEN PURP 200V 250MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 577 шт
термін постачання 14-28 дні (днів)
3+ 26.13 грн
10+ 18.68 грн
100+ 10.59 грн
500+ 6.58 грн
BC857BE6327HTSA1 BC857BE6327HTSA1 bc856series_bc857series_bc858series_bc859series_bc860series.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca389011541da0e3a1661 Infineon Technologies Description: TRANS PNP 45V 0.1A SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 250MHz
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: BC857
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 36025 шт
термін постачання 14-28 дні (днів)
XMC1404Q064X0200AAXUMA1 XMC1404Q064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Infineon Technologies Description: IC MCU 32BIT 200KB FLASH 64VQFN
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Speed: 48MHz
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-VQFN-64-6
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Data Converters: A/D 12x12b
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
RAM Size: 16K x 8
Program Memory Type: FLASH
Program Memory Size: 200KB (200K x 8)
Number of I/O: 48
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
на замовлення 1846 шт
термін постачання 14-28 дні (днів)
на замовлення 17598 шт - ціна та термін постачання
SIGC12T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Infineon Technologies
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IRF7307QTRPBF IRF7307QTRPBF IRF7307QPbF.pdf Infineon Technologies Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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на замовлення 60000 шт - ціна та термін постачання
IRF7307PBF IRF7307PBF irf7307pbf.pdf?fileId=5546d462533600a4015355f20d211b0e техническая информация Infineon Technologies Description: MOSFET N/P-CH 20V 8-SOIC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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на замовлення 9 шт - ціна та термін постачання
IPB180N04S401ATMA1 IPB180N04S401ATMA1 Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t Infineon Technologies Description: MOSFET N-CH 40V 180A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 4482 шт - ціна та термін постачання
IPC100N04S51R9ATMA1 IPC100N04S51R9ATMA1 Infineon-IPC100N04S5-1R9-DS-v01_02-EN.pdf?fileId=5546d4625696ed760156d57e72dd6073 Infineon Technologies Description: MOSFET N-CH 40V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 9802 шт - ціна та термін постачання
BFR92PE6327HTSA1 BFR92PE6327HTSA1 bfr92p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426fd178506a6 Infineon Technologies Description: RF TRANS NPN 15V 5GHZ SOT23-3
Base Part Number: BFR92
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
Voltage - Collector Emitter Breakdown (Max): 15V
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 24044 шт
термін постачання 14-28 дні (днів)
на замовлення 3500 шт - ціна та термін постачання
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf Infineon Technologies Description: IC IGBT DVR 1200V 2A DSO20
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Output Supply: 13V ~ 20V
Current - Output High, Low: 2A, 2A
Rise / Fall Time (Typ): 30ns, 50ns
Voltage - Isolation: 4500Vrms
Number of Channels: 1
Technology: Magnetic Coupling
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-DSO-20-77
Package / Case: 20-SOIC (0.295", 7.50mm Width)
на замовлення 998 шт
термін постачання 14-28 дні (днів)
AUIRLR2905Z AUIRLR2905Z AUIRLR2905Z.pdf Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5 шт - ціна та термін постачання
AUIRLR2905TRL AUIRLR2905TRL AUIRLR2905.pdf Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
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AUIRLR2905 AUIRLR2905 AUIRLR2905.pdf Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
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IRLR2905TRRPBF IRLR2905TRRPBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
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IRLR2905CPBF IRLR2905CPBF Part_Number_Guide_Web.pdf Infineon Technologies Description: MOSFET N-CH 55V 36A DPAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Supplier Device Package: D-Pak
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
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IRLR2905PBF IRLR2905PBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679 Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 50 шт - ціна та термін постачання
IRLR2905ZPBF IRLR2905ZPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c техническая информация Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRLR2905Z IRLR2905Z irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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IRLR2905TRR IRLR2905TRR IRLR,U2905.pdf Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
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IRLR2905TRL IRLR2905TRL IRLR,U2905.pdf Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRLR2905ZTRLPBF IRLR2905ZTRLPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
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IRLR2905ZTRPBF IRLR2905ZTRPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c Infineon Technologies Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
на замовлення 3393 шт
термін постачання 14-28 дні (днів)
на замовлення 150 шт - ціна та термін постачання
IR2103STRPBF IR2103STRPBF ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f техническая информация Infineon Technologies Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 210mA, 360mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10V ~ 20V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
на замовлення 5933 шт
термін постачання 14-28 дні (днів)
на замовлення 55932 шт - ціна та термін постачання
ITS4140NHUMA1 ITS4140NHUMA1 Infineon-ITS4140N-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4298dc34130&ack=t Infineon Technologies Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -30°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
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на замовлення 4368 шт - ціна та термін постачання
IRG4BC15UD-LPBF IRG4BC15UD-LPBF irg4bc15ud-spbf.pdf?fileId=5546d462533600a40153563f17c9224c Infineon Technologies Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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TDA48632GXUMA2 TDA48632GXUMA2 tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab Infineon Technologies Description: IC PFC CTRLR DCM 8DSO
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: TDA4863
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Startup: 20µA
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 150°C
Mode: Discontinuous Conduction (DCM)
на замовлення 15294 шт
термін постачання 14-28 дні (днів)
на замовлення 4644 шт - ціна та термін постачання
IRF5305SPBF IRF5305SPBF irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 Infineon Technologies Description: MOSFET P-CH 55V 31A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
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IRF5305L IRF5305L irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 Infineon Technologies Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Part Status: Obsolete
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 2080 шт - ціна та термін постачання
IRF5305STRRPBF IRF5305STRRPBF irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995 Infineon Technologies Description: MOSFET P-CH 55V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
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IRF5305PBF IRF5305PBF irf5305pbf.pdf?fileId=5546d462533600a4015355e370101993 Infineon Technologies Description: MOSFET P-CH 55V 31A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 4718 шт
термін постачання 14-28 дні (днів)
на замовлення 1137 шт - ціна та термін постачання
1+ 103.21 грн
10+ 88.69 грн
100+ 69.12 грн
500+ 53.59 грн
1000+ 47.01 грн
IRF540NL IRF540NL irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 Infineon Technologies Description: MOSFET N-CH 100V 33A TO262
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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IRF540NSTRRPBF IRF540NSTRRPBF irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 техническая информация Infineon Technologies Description: MOSFET N-CH 100V 33A D2PAK
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 1 шт - ціна та термін постачання
IRF540NPBF IRF540NPBF irf540npbf.pdf?fileId=5546d462533600a4015355e39f0d19a1 Infineon Technologies Description: MOSFET N-CH 100V 33A TO220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
на замовлення 28376 шт
термін постачання 14-28 дні (днів)
на замовлення 13877 шт - ціна та термін постачання
1+ 84.92 грн
10+ 73.09 грн
100+ 57 грн
500+ 44.19 грн
1000+ 38.76 грн
IRF540NLPBF IRF540NLPBF irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 техническая информация Infineon Technologies Description: MOSFET N-CH 100V 33A TO262
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
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IR3556MTRPBF IR3556MTRPBF pb-ir3556.pdf?fileId=5546d462533600a40153567fe2fb28d7 Infineon Technologies Description: IC DRIVER GATE 50A PQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Applications: Synchronous Buck Converters, Voltage Regulators
Interface: PWM
Load Type: Inductive
Current - Output / Channel: 50A
Voltage - Supply: 4.5V ~ 7V
Voltage - Load: 4.5V ~ 15V
Features: Diode Emulation, Status Flag
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Mounting Type: Surface Mount
Package / Case: 30-PowerVFQFN
Supplier Device Package: 30-PQFN (6x6)
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IRG5U75HF06A irg5u75hf06a.pdf Infineon Technologies Description: IGBT MOD 600V 100A 330W POWIR 34
Part Status: Obsolete
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Supplier Device Package: POWIR® 34
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Packaging: Box
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
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IRG4RC10UTRPBF IRG4RC10UTRPBF irg4rc10upbf.pdf?fileId=5546d462533600a401535648f0b02349 Infineon Technologies Description: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5734 шт - ціна та термін постачання
IRGR3B60KD2TRLP IRGR3B60KD2TRLP Part_Number_Guide_Web.pdf Infineon Technologies Description: IGBT 600V 7.8A 52W DPAK
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
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IRGR3B60KD2TRP IRGR3B60KD2TRP Part_Number_Guide_Web.pdf Infineon Technologies Description: IGBT 600V 7.8A 52W DPAK
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
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IRG4RC10UDTRLP IRG4RC10UDTRLP irg4rc10udpbf.pdf?fileId=5546d462533600a401535648e8532347 Infineon Technologies Description: IGBT 600V 8.5A 38W DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100Ohm, 15V
Td (on/off) @ 25°C: 40ns/87ns
Gate Charge: 15nC
Input Type: Standard
Switching Energy: 140µJ (on), 120µJ (off)
Power - Max: 38W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Current - Collector Pulsed (Icm): 34A
Current - Collector (Ic) (Max): 8.5A
Voltage - Collector Emitter Breakdown (Max): 600V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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на замовлення 18478 шт - ціна та термін постачання
IRGS6B60KDTRLP IRGS6B60KDTRLP IRG(B,S,SL)6B60KDPbF.pdf Infineon Technologies Description: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3828 шт - ціна та термін постачання
IRGS10B60KDTRLP IRGS10B60KDTRLP IRG(B,S,SL)10B60KDPbF.pdf Infineon Technologies Description: IGBT 600V 22A 156W D2PAK
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3124 шт - ціна та термін постачання
TLE9251VLEXUMA1
Код товару: 163586
Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b
Виробник: Infineon Technologies
Мікросхеми - Інтерфейсні
Корпус: TSON
Характеристики: CAN 5Mbps Standby 3.3V/5V Automotive 8-Pin TSON EP
Тип монтажу: SMD
Інтерфейс: CAN
25 шт - склад Київ
3 шт - РАДІОМАГ-Дніпро
1+ 37 грн
10+ 35 грн
IPB123N10N3GATMA1 Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e
IPB123N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 58A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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на замовлення 1388 шт - ціна та термін постачання
SAK-XC2267M-104F80L AB
Виробник: Infineon Technologies
Description: IC MCU 16BIT 100LQFP
Manufacturer: Infineon Technologies
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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IFS200V12PT4BOSA1 Infineon-IFS200V12PT4-DS-v02_01-en.pdf?fileId=db3a30432a40a650012a461a9c8b2b52
Виробник: Infineon Technologies
Description: MODULE IPM MIPAQ-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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IR38363MTRPBFAUMA1 Infineon-IR38163M%20IR38165M%20IR38363M%20IR38365M%20Datasheet-DS-v03_20-EN.pdf?fileId=5546d4625b62cd8a015bcf81f1526e4c
IR38363MTRPBFAUMA1
Виробник: Infineon Technologies
Description: IC REG 15A 34PQFN
Base Part Number: IR38363
Supplier Device Package: 34-PQFN (5x7)
Package / Case: 34-PowerVFQFN
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Infineon Technologies
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 3360 шт - ціна та термін постачання
IPW60R018CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R018CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9901 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 416W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
на замовлення 59 шт
термін постачання 14-28 дні (днів)
1+ 1716.68 грн
10+ 1524.52 грн
IPW60R017C7XKSA1 Infineon-IPW60R017C7-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153cc8319e77eb8
IPW60R017C7XKSA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 4V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 17mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
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IPW60R037CSFDXKSA1
IPW60R037CSFDXKSA1
Виробник: Infineon Technologies
Description: MOSFET N CH
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5623 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.63mA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
на замовлення 218 шт
термін постачання 14-28 дні (днів)
1+ 844.62 грн
10+ 747.73 грн
100+ 645.72 грн
IPW60R075CPAFKSA1 IPW60R075CPA_Rev2.0_2010-02-15.pdf
Виробник: Infineon Technologies
Description: AUTOMOTIVE
Part Status: Active
Packaging: Tube
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IPW60R120P7XKSA1 Infineon-IPW60R120P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015accdf045c0225
IPW60R120P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 26A TO247-3
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
на замовлення 1 шт
термін постачання 14-28 дні (днів)
1+ 380.83 грн
IPW60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R145CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET HIGH POWER
Part Status: Active
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Packaging: Tube
на замовлення 178 шт
термін постачання 14-28 дні (днів)
1+ 374.3 грн
10+ 323.76 грн
100+ 265.29 грн
IPW60R060P7XKSA1 Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c
IPW60R060P7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 48A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4V @ 800µA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IPW60R090CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPW60R090CFD7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO247-3
Part Status: Active
Supplier Device Package: PG-TO247-3
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 199 шт
термін постачання 14-28 дні (днів)
1+ 496.45 грн
10+ 432.02 грн
100+ 357.69 грн
SHIELDBTS500151TADTOBO1 Infineon-Protected_Switch_Shield_with_BTS50015-1TAD_for_Arduino-GS-v01_00-EN.pdf?fileId=5546d462580663ef01583e4e1c0d1844
SHIELDBTS500151TADTOBO1
Виробник: Infineon Technologies
Description: EVAL 12V PROTECT SWITCH SHIELD
Part Status: Active
Utilized IC / Part: BTS50015-1TAD
Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Bulk
на замовлення 1 шт
термін постачання 14-28 дні (днів)
SIDC14D120H8X1SA1 Infineon-SIDC14D120H8_L4055C-DS-v02_01-en.pdf?fileId=db3a304333b8a7ca0133c6b1701d6173
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 25A WAFER
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 25A (DC)
Supplier Device Package: Sawn on foil
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 25 A
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SRF55V10PNBX1SA3
Виробник: Infineon Technologies
Description: IC INTELLIGENT EEPROM MCC2-2
Part Status: Active
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IPD80R2K0P7ATMA1 Infineon-IPD80R2K0P7-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b423eae833e5a
IPD80R2K0P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 500 V
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SGP04N60XKSA1 SGx04N60.pdf
SGP04N60XKSA1
Виробник: Infineon Technologies
Description: IGBT, 9.4A, 600V, N-CHANNEL
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 50 W
Current - Collector Pulsed (Icm): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 9.4 A
Part Status: Obsolete
Gate Charge: 24 nC
Test Condition: 400V, 4A, 67Ohm, 15V
Switching Energy: 131µJ
Td (on/off) @ 25°C: 22ns/237ns
IGBT Type: NPT
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
на замовлення 11298 шт
термін постачання 14-28 дні (днів)
293+ 64.74 грн
IRS2541STRPBF IRS254(0,1)(S)PbF.pdf
IRS2541STRPBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8SOIC
Operating Temperature: -25°C ~ 150°C (TJ)
Topology: Step-Down (Buck)
Type: DC DC Controller
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Dimming: PWM
Frequency: 500kHz
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Number of Outputs: 1
Internal Switch(s): No
Base Part Number: IRS2541SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
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IRS25411STRPBF irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826
IRS25411STRPBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8SOIC
Part Status: Discontinued at Digi-Key
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Number of Outputs: 1
Internal Switch(s): No
Topology: Step-Down (Buck)
Type: DC DC Controller
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: IRS25411SPBF
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Dimming: PWM
Frequency: 500kHz
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IRS25411PBF irs25401pbf.pdf?fileId=5546d462533600a40153567b06662826
IRS25411PBF
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR DIM 8DIP
Packaging: Tube
Part Status: Obsolete
Voltage - Supply (Max): 16.6V
Voltage - Supply (Min): 8V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
на замовлення 900 шт
термін постачання 14-28 дні (днів)
на замовлення 870 шт - ціна та термін постачання
IRS2541PBF IRS254(0,1)(S)PbF.pdf
IRS2541PBF
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR DIM 500MA 8DIP
Part Status: Obsolete
Voltage - Supply (Max): 15.6V
Voltage - Supply (Min): 9V
Dimming: PWM
Supplier Device Package: 8-PDIP
Topology: Step-Down (Buck)
Internal Switch(s): No
Operating Temperature: -25°C ~ 150°C (TJ)
Type: DC DC Controller
Frequency: 500kHz
Number of Outputs: 1
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 300 шт
термін постачання 14-28 дні (днів)
BSL307SPH6327XTSA1 Infineon-BSL307SP-DS-v02_00-en.pdf?fileId=db3a304342c787030142dca7f3721687
BSL307SPH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A 6TSOP
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 25V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP-6-1
Package / Case: SOT-23-6 Thin, TSOT-23-6
на замовлення 2931 шт
термін постачання 14-28 дні (днів)
IPB180N04S400ATMA1 Infineon-IPB180N04S4_00-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c3debd55d57&ack=t
IPB180N04S400ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7-3
Input Capacitance (Ciss) (Max) @ Vds: 22880pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
Rds On (Max) @ Id, Vgs: 0.98mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: PG-TO263-7-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
на замовлення 13422 шт
термін постачання 14-28 дні (днів)
IR2156STRPBF ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
IR2156STRPBF
Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 44KHZ 14SOIC
Base Part Number: IR2156SPBF
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Dimming: No
Current - Supply: 10mA
Voltage - Supply: 10.5V ~ 16.5V
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 3537 шт
термін постачання 14-28 дні (днів)
на замовлення 10000 шт - ціна та термін постачання
DDB2U40N12W1RFB11BPSA1 Infineon-DDB2U40N12W1RF_B11-DataSheet-v01_10-EN.pdf?fileId=5546d4627956d53f01797956e82d517c
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY1B-2311
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: AG-EASY1B-1
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 40 A
Current - Reverse Leakage @ Vr: 116 µA @ 1200 V
на замовлення 24 шт
термін постачання 14-28 дні (днів)
1+ 5131.09 грн
BSP321PH6327XTSA1 Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39
BSP321PH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
на замовлення 782 шт
термін постачання 14-28 дні (днів)
на замовлення 782 шт - ціна та термін постачання
ICE2A0565ZHKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A0565ZHKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Power (Watts): 23 W
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ICE2A0565GXUMA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A0565GXUMA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Power (Watts): 23 W
Part Status: Obsolete
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Packaging: Tape & Reel (TR)
Control Features: Soft Start
Voltage - Start Up: 13.5 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-12-10
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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ICE2A0565FKLA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A0565FKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 23 W
Part Status: Obsolete
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 72%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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AUIRFZ24NSTRR auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd
AUIRFZ24NSTRR
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Part Status: Obsolete
Supplier Device Package: D-PAK (TO-252AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
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IRFZ24NSTRLPBF irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9
IRFZ24NSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
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AUXCLFZ24NSTRL irfz24nspbf.pdf?fileId=5546d462533600a40153563affb821f9
AUXCLFZ24NSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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IRFZ24NSTRL irfz24ns.pdf
IRFZ24NSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Mounting Type: Surface Mount
товар відсутній, Ви можете зробити запит додавши товар у кошик
AUIRFZ24NSTRL auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd
AUIRFZ24NSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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на замовлення 8216 шт - ціна та термін постачання
TLE5009A16DE1200XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
TLE5009A16DE1200XUMA1
Виробник: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
на замовлення 2290 шт
термін постачання 14-28 дні (днів)
на замовлення 2500 шт - ціна та термін постачання
1+ 600.31 грн
5+ 506.87 грн
10+ 456.17 грн
25+ 380.57 грн
50+ 352.02 грн
100+ 330.92 грн
BAS21E6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS21E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Base Part Number: BAS21
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 100nA @ 200V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 37687 шт
термін постачання 14-28 дні (днів)
на замовлення 1097 шт - ціна та термін постачання
BAS21E6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS21E6327HTSA1
Виробник: Infineon Technologies
Description: DIODE GP 200V 250MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA (DC)
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
на замовлення 1097 шт
термін постачання 14-28 дні (днів)
на замовлення 37687 шт - ціна та термін постачання
3+ 23.52 грн
10+ 18.37 грн
100+ 9.72 грн
500+ 6 грн
1000+ 4.08 грн
BAS2103WE6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS2103WE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOD323
Diode Type: Standard
Part Status: Last Time Buy
Base Part Number: BAS21-03W
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Package / Case: SC-76, SOD-323
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Current - Average Rectified (Io): 250mA (DC)
Voltage - DC Reverse (Vr) (Max): 200V
на замовлення 41943 шт
термін постачання 14-28 дні (днів)
на замовлення 577 шт - ціна та термін постачання
BAS2103WE6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS2103WE6327HTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOD323-2
Current - Average Rectified (Io): 250mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 577 шт
термін постачання 14-28 дні (днів)
на замовлення 41943 шт - ціна та термін постачання
3+ 26.13 грн
10+ 18.68 грн
100+ 10.59 грн
500+ 6.58 грн
BC857BE6327HTSA1 bc856series_bc857series_bc858series_bc859series_bc860series.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca389011541da0e3a1661
BC857BE6327HTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Frequency - Transition: 250MHz
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP
Part Status: Last Time Buy
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: BC857
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
на замовлення 36025 шт
термін постачання 14-28 дні (днів)
XMC1404Q064X0200AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q064X0200AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 64VQFN
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Speed: 48MHz
Core Size: 32-Bit
Core Processor: ARM® Cortex®-M0
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-VQFN-64-6
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Data Converters: A/D 12x12b
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
RAM Size: 16K x 8
Program Memory Type: FLASH
Program Memory Size: 200KB (200K x 8)
Number of I/O: 48
Peripherals: Brown-out Detect/Reset, I²S, LED, POR, PWM, WDT
на замовлення 1846 шт
термін постачання 14-28 дні (днів)
на замовлення 17598 шт - ціна та термін постачання
SIGC12T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 10A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Input Type: Standard
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Infineon Technologies
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IRF7307QTRPBF IRF7307QPbF.pdf
IRF7307QTRPBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 60000 шт - ціна та термін постачання
IRF7307PBF техническая информация irf7307pbf.pdf?fileId=5546d462533600a4015355f20d211b0e
IRF7307PBF
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V 8-SOIC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 9 шт - ціна та термін постачання
IPB180N04S401ATMA1 Infineon-IPB180N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c432c5d5d67&ack=t
IPB180N04S401ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 140µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 4482 шт - ціна та термін постачання
IPC100N04S51R9ATMA1 Infineon-IPC100N04S5-1R9-DS-v01_02-EN.pdf?fileId=5546d4625696ed760156d57e72dd6073
IPC100N04S51R9ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON-34
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-34
Vgs(th) (Max) @ Id: 3.4V @ 50µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 9802 шт - ціна та термін постачання
BFR92PE6327HTSA1 bfr92p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426fd178506a6
BFR92PE6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Base Part Number: BFR92
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Current - Collector (Ic) (Max): 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Power - Max: 280mW
Gain: 10.5dB ~ 16dB
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 5GHz
Voltage - Collector Emitter Breakdown (Max): 15V
Transistor Type: NPN
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
на замовлення 24044 шт
термін постачання 14-28 дні (днів)
на замовлення 3500 шт - ціна та термін постачання
1ED020I12FA2XUMA2 Infineon-1ED020I12FA2-DS-v02_00-en.pdf?fileId=db3a304333227b5e013344d078be4cdf
1ED020I12FA2XUMA2
Виробник: Infineon Technologies
Description: IC IGBT DVR 1200V 2A DSO20
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Output Supply: 13V ~ 20V
Current - Output High, Low: 2A, 2A
Rise / Fall Time (Typ): 30ns, 50ns
Voltage - Isolation: 4500Vrms
Number of Channels: 1
Technology: Magnetic Coupling
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: PG-DSO-20-77
Package / Case: 20-SOIC (0.295", 7.50mm Width)
на замовлення 998 шт
термін постачання 14-28 дні (днів)
AUIRLR2905Z AUIRLR2905Z.pdf
AUIRLR2905Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5 шт - ціна та термін постачання
AUIRLR2905TRL AUIRLR2905.pdf
AUIRLR2905TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
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AUIRLR2905 AUIRLR2905.pdf
AUIRLR2905
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
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IRLR2905TRRPBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLR2905TRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
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IRLR2905CPBF Part_Number_Guide_Web.pdf
IRLR2905CPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 36A DPAK
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Supplier Device Package: D-Pak
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
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IRLR2905PBF irlr2905pbf.pdf?fileId=5546d462533600a40153566cc2bb2679
IRLR2905PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Packaging: Tube
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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на замовлення 50 шт - ціна та термін постачання
IRLR2905ZPBF техническая информация irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IRLR2905Z irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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IRLR2905TRR IRLR,U2905.pdf
IRLR2905TRR
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
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IRLR2905TRL IRLR,U2905.pdf
IRLR2905TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRLR2905ZTRLPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
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IRLR2905ZTRPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Drain to Source Voltage (Vdss): 55V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
на замовлення 3393 шт
термін постачання 14-28 дні (днів)
на замовлення 150 шт - ціна та термін постачання
IR2103STRPBF техническая информация ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 100ns, 50ns
High Side Voltage - Max (Bootstrap): 600V
Input Type: Inverting, Non-Inverting
Current - Peak Output (Source, Sink): 210mA, 360mA
Logic Voltage - VIL, VIH: 0.8V, 3V
Voltage - Supply: 10V ~ 20V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
на замовлення 5933 шт
термін постачання 14-28 дні (днів)
на замовлення 55932 шт - ціна та термін постачання
ITS4140NHUMA1 Infineon-ITS4140N-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4298dc34130&ack=t
ITS4140NHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: High Side
Operating Temperature: -30°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Part Status: Active
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Features: Auto Restart
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 4368 шт - ціна та термін постачання
IRG4BC15UD-LPBF irg4bc15ud-spbf.pdf?fileId=5546d462533600a40153563f17c9224c
IRG4BC15UD-LPBF
Виробник: Infineon Technologies
Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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TDA48632GXUMA2 tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab
TDA48632GXUMA2
Виробник: Infineon Technologies
Description: IC PFC CTRLR DCM 8DSO
Part Status: Active
Packaging: Digi-Reel® (Додаткова плата за котушку в розмірі $7)
Base Part Number: TDA4863
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Startup: 20µA
Voltage - Supply: 12.5V ~ 20V
Operating Temperature: -40°C ~ 150°C
Mode: Discontinuous Conduction (DCM)
на замовлення 15294 шт
термін постачання 14-28 дні (днів)
на замовлення 4644 шт - ціна та термін постачання
IRF5305SPBF irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305SPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
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IRF5305L irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305L
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO262
Packaging: Tube
Part Status: Obsolete
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 2080 шт - ціна та термін постачання
IRF5305STRRPBF irf5305spbf.pdf?fileId=5546d462533600a4015355e378101995
IRF5305STRRPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
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IRF5305PBF irf5305pbf.pdf?fileId=5546d462533600a4015355e370101993
IRF5305PBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 31A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 4718 шт
термін постачання 14-28 дні (днів)
на замовлення 1137 шт - ціна та термін постачання
1+ 103.21 грн
10+ 88.69 грн
100+ 69.12 грн
500+ 53.59 грн
1000+ 47.01 грн
IRF540NL irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NL
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO262
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
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IRF540NSTRRPBF техническая информация irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 1 шт - ціна та термін постачання
IRF540NPBF irf540npbf.pdf?fileId=5546d462533600a4015355e39f0d19a1
IRF540NPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
на замовлення 28376 шт
термін постачання 14-28 дні (днів)
на замовлення 13877 шт - ціна та термін постачання
1+ 84.92 грн
10+ 73.09 грн
100+ 57 грн
500+ 44.19 грн
1000+ 38.76 грн
IRF540NLPBF техническая информация irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 33A TO262
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
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IR3556MTRPBF pb-ir3556.pdf?fileId=5546d462533600a40153567fe2fb28d7
IR3556MTRPBF
Виробник: Infineon Technologies
Description: IC DRIVER GATE 50A PQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Applications: Synchronous Buck Converters, Voltage Regulators
Interface: PWM
Load Type: Inductive
Current - Output / Channel: 50A
Voltage - Supply: 4.5V ~ 7V
Voltage - Load: 4.5V ~ 15V
Features: Diode Emulation, Status Flag
Fault Protection: Current Limiting, Over Temperature, Over Voltage, UVLO
Mounting Type: Surface Mount
Package / Case: 30-PowerVFQFN
Supplier Device Package: 30-PQFN (6x6)
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IRG5U75HF06A irg5u75hf06a.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 600V 100A 330W POWIR 34
Part Status: Obsolete
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Supplier Device Package: POWIR® 34
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: POWIR® 34 Module
Packaging: Box
Power - Max: 330 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
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IRG4RC10UTRPBF irg4rc10upbf.pdf?fileId=5546d462533600a401535648f0b02349
IRG4RC10UTRPBF
Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 8.5A
Current - Collector Pulsed (Icm): 34A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Power - Max: 38W
Switching Energy: 80µJ (on), 160µJ (off)
Input Type: Standard
Gate Charge: 15nC
Td (on/off) @ 25°C: 19ns/116ns
Test Condition: 480V, 5A, 100Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 5734 шт - ціна та термін постачання
IRGR3B60KD2TRLP Part_Number_Guide_Web.pdf
IRGR3B60KD2TRLP
Виробник: Infineon Technologies
Description: IGBT 600V 7.8A 52W DPAK
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
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IRGR3B60KD2TRP Part_Number_Guide_Web.pdf
IRGR3B60KD2TRP
Виробник: Infineon Technologies
Description: IGBT 600V 7.8A 52W DPAK
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15.6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.8 A
Part Status: Obsolete
Gate Charge: 13 nC
Test Condition: 400V, 3A, 100Ohm, 15V
Switching Energy: 62µJ (on), 39µJ (off)
Td (on/off) @ 25°C: 18ns/110ns
IGBT Type: NPT
Supplier Device Package: D-Pak
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
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IRG4RC10UDTRLP irg4rc10udpbf.pdf?fileId=5546d462533600a401535648e8532347
IRG4RC10UDTRLP
Виробник: Infineon Technologies
Description: IGBT 600V 8.5A 38W DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 28ns
Test Condition: 480V, 5A, 100Ohm, 15V
Td (on/off) @ 25°C: 40ns/87ns
Gate Charge: 15nC
Input Type: Standard
Switching Energy: 140µJ (on), 120µJ (off)
Power - Max: 38W
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Current - Collector Pulsed (Icm): 34A
Current - Collector (Ic) (Max): 8.5A
Voltage - Collector Emitter Breakdown (Max): 600V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
товар відсутній, Ви можете зробити запит додавши товар у кошик
на замовлення 18478 шт - ціна та термін постачання
IRGS6B60KDTRLP IRG(B,S,SL)6B60KDPbF.pdf
IRGS6B60KDTRLP
Виробник: Infineon Technologies
Description: IGBT 600V 13A 90W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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на замовлення 3828 шт - ціна та термін постачання
IRGS10B60KDTRLP IRG(B,S,SL)10B60KDPbF.pdf
IRGS10B60KDTRLP
Виробник: Infineon Technologies
Description: IGBT 600V 22A 156W D2PAK
Td (on/off) @ 25°C: 30ns/230ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
Reverse Recovery Time (trr): 90 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 156 W
Current - Collector Pulsed (Icm): 44 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 22 A
Part Status: Obsolete
Gate Charge: 38 nC
Test Condition: 400V, 10A, 47Ohm, 15V
Switching Energy: 140µJ (on), 250µJ (off)
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на замовлення 3124 шт - ціна та термін постачання
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