Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (129573) > Сторінка 319 з 2160

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SHIELDBTS70081EPPTOBO1 SHIELDBTS70081EPPTOBO1 Infineon Technologies Infineon-PROFET+2_12V_Arduino_Shield-UserManual-v01_00-EN.pdf?fileId=5546d4626df6ee62016dfe3f1eff118b Description: BTS7008-1EPP SHIELD FOR ARDUINO
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPP
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2854.43 грн
В кошику  од. на суму  грн.
KP275PS2GOKITTOBO1 KP275PS2GOKITTOBO1 Infineon Technologies Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18 Description: DIGITAL MAP PRESSURE SENSOR 2GO
Packaging: Box
Sensitivity: ±3kPa
Interface: SENT
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Pressure
Utilized IC / Part: KP275
Supplied Contents: Board(s)
Sensing Range: 10 ~ 400kPa
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IDP45E60XKSA2 Infineon Technologies Infineon-IDP45E60-DS-v02_05-en.pdf?fileId=db3a30432313ff5e01237a518c6e7be9 Description: IC IDP45E60 TO220-2
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SP376571160XTMA1 Infineon Technologies Description: IC TPMS & INERTIA 14DSOSP
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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SIDC88D65DC8AX7SA2 Infineon Technologies Description: DIODE GENERAL PURPOSE 650V
Packaging: Bulk
Part Status: Obsolete
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2ED2106S06FXUMA1 2ED2106S06FXUMA1 Infineon Technologies infineon-2ed2182-4-s06f-j-datasheet-en.pdf Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
4+98.18 грн
10+68.62 грн
25+62.19 грн
100+51.66 грн
250+48.47 грн
500+46.54 грн
1000+45.04 грн
Мінімальне замовлення: 4 шт
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TC264D40F200WBCKXUMA1 TC264D40F200WBCKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Number of I/O: 88
DigiKey Programmable: Not Verified
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
1+1437.90 грн
10+1106.88 грн
25+1037.57 грн
100+902.22 грн
250+868.12 грн
500+847.58 грн
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TC234LP32F200FACKXUMA1 TC234LP32F200FACKXUMA1 Infineon Technologies Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 380 шт:
термін постачання 21-31 дні (днів)
1+1159.98 грн
10+887.14 грн
25+829.66 грн
100+719.31 грн
250+691.04 грн
В кошику  од. на суму  грн.
1ED44176N01FXUMA1 1ED44176N01FXUMA1 Infineon Technologies Infineon-1ED44176N01F-DataSheet-v02_02-EN.pdf?fileId=5546d46265487f7b01655c2d7ae77787 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: CMOS, TTL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Current - Peak Output (Source, Sink): 800mA, 1.75A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2516 шт:
термін постачання 21-31 дні (днів)
5+74.43 грн
10+51.70 грн
25+46.63 грн
100+38.60 грн
250+36.13 грн
500+34.64 грн
1000+33.19 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
TC275T64F200WDCKXUMA1 TC275T64F200WDCKXUMA1 Infineon Technologies infineon-tc27xdc-datasheet-en.pdf Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
1+1783.92 грн
10+1379.69 грн
50+1244.22 грн
100+1128.31 грн
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IRS2008MTRPBFAUMA1 IRS2008MTRPBFAUMA1 Infineon Technologies Infineon-IRS2008(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3 Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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IRS2008MTRPBFAUMA1 IRS2008MTRPBFAUMA1 Infineon Technologies Infineon-IRS2008(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3 Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIDC14D60E6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC08D60C8X1SA3 Infineon Technologies Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770 Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC25T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/324ns
Test Condition: 400V, 30A, 11Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
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SIDC14D60C8X1SA1 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC04D60F6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC61T60NCX1SA1 Infineon Technologies SIGC61T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
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SIDC06D60E6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC81T60NCX7SA1 SIGC81T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 95ns/200ns
Test Condition: 300V, 100A, 2.2Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
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SIDC14D60F6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC42T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/130ns
Test Condition: 300V, 50A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
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SIDC06D60F6X1SA4 Infineon Technologies SIDC06D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC14D60F6X1SA4 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC08D60C8X7SA1 Infineon Technologies Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC14D60C8X7SA1 Infineon Technologies Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D65C8X1SA1 SIDC06D65C8X1SA1 Infineon Technologies Infineon-SIDC06D65C8_L4017C-DS-v01_00-en.pdf?fileId=db3a30433c9100bf013c915c15370045 Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
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SIGC42T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
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SIDC08D60C8X1SA2 Infineon Technologies Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770 Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60F6X7SA1 Infineon Technologies Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60F6X1SA2 Infineon Technologies SIDC06D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60E6X1SA1 Infineon Technologies SIDC06D60E6_ed1_3-12-01.pdf Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIDC14D60E6X1SA4 Infineon Technologies SIDC14D60E6_ed1_7-1-02.pdf Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIGC25T60UNX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
товару немає в наявності
В кошику  од. на суму  грн.
SIGC61T60NCX7SA1 SIGC61T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 300V, 75A, 3Ohm, 15V
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
товару немає в наявності
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SIDC14D60E6X1SA3 Infineon Technologies SIDC14D60E6_ed1_7-1-02.pdf Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIDC06D60E6X1SA4 Infineon Technologies SIDC06D60E6_ed1_3-12-01.pdf Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIDC04D60F6X1SA2 Infineon Technologies SIDC04D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIDC14D60C8X1SA3 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIDC14D60F6X1SA3 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIDC26D60C8X1SA1 SIDC26D60C8X1SA1 Infineon Technologies Infineon-SIDC26D60C8_L4028M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c9039e2405834 Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIDC08D60C8X1SA1 Infineon Technologies Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770 Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIDC04D60F6X1SA4 Infineon Technologies SIDC04D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SIGC25T60NCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
товару немає в наявності
В кошику  од. на суму  грн.
SIDC14D60F6X1SA1 Infineon Technologies SIDC14D60F6_ed2.1_9-3-10.pdf Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIGC81T60SNCX7SA1 SIGC81T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
товару немає в наявності
В кошику  од. на суму  грн.
SIDC14D60C8X1SA2 SIDC14D60C8X1SA2 Infineon Technologies Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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REFICL5102HVU150WTOBO1 REFICL5102HVU150WTOBO1 Infineon Technologies Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023 Description: EVAL BOARD FOR ICL5102HV
Packaging: Box
Voltage - Output: 17V ~ 48V
Voltage - Input: 277 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: ICL5102HV
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
товару немає в наявності
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FS380R12A6T4BBPSA1 FS380R12A6T4BBPSA1 Infineon Technologies Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1 Description: IGBT MODULE 1200V 380A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+46012.16 грн
В кошику  од. на суму  грн.
TLE92108232QXXUMA1 TLE92108232QXXUMA1 Infineon Technologies Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+129.97 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FS950R08A6P2BBPSA1 FS950R08A6P2BBPSA1 Infineon Technologies Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4 Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+22856.83 грн
12+21039.27 грн
В кошику  од. на суму  грн.
TLS715B0TSNPBOARDTOBO1 TLS715B0TSNPBOARDTOBO1 Infineon Technologies Description: EVAL TLS715B0NAV50 LDO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 40V
Current - Output: 150mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS715B0NAV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2048.38 грн
В кошику  од. на суму  грн.
TLE9210823QXAPPKITTOBO1 TLE9210823QXAPPKITTOBO1 Infineon Technologies TLE92108-23QX_APPKIT_Web.pdf Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+3974.82 грн
В кошику  од. на суму  грн.
EVALM5E1B1245NSICTOBO1 EVALM5E1B1245NSICTOBO1 Infineon Technologies Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27 Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
товару немає в наявності
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TLE92108231QXXUMA1 TLE92108231QXXUMA1 Infineon Technologies Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979 Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+125.04 грн
5000+118.09 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+135.61 грн
2000+127.42 грн
3000+125.84 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TLD22522EPXUMA1 TLD22522EPXUMA1 Infineon Technologies Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995 Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
3+109.27 грн
10+76.55 грн
25+69.45 грн
100+57.83 грн
250+54.33 грн
500+52.22 грн
1000+49.65 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 ICL5102HVXUMA1 Infineon Technologies Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6 Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3926 шт:
термін постачання 21-31 дні (днів)
2+232.00 грн
10+167.90 грн
25+153.93 грн
100+130.04 грн
250+123.17 грн
500+121.49 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRAUDAMP23 IRAUDAMP23 Infineon Technologies Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4 Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+20181.34 грн
В кошику  од. на суму  грн.
SHIELDBTS70081EPPTOBO1 Infineon-PROFET+2_12V_Arduino_Shield-UserManual-v01_00-EN.pdf?fileId=5546d4626df6ee62016dfe3f1eff118b
SHIELDBTS70081EPPTOBO1
Виробник: Infineon Technologies
Description: BTS7008-1EPP SHIELD FOR ARDUINO
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPP
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2854.43 грн
В кошику  од. на суму  грн.
KP275PS2GOKITTOBO1 Infineon-PS2GO_MS2Go_How_to_use_June2019-UserManual-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b6b47f3fd5a18
KP275PS2GOKITTOBO1
Виробник: Infineon Technologies
Description: DIGITAL MAP PRESSURE SENSOR 2GO
Packaging: Box
Sensitivity: ±3kPa
Interface: SENT
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Pressure
Utilized IC / Part: KP275
Supplied Contents: Board(s)
Sensing Range: 10 ~ 400kPa
товару немає в наявності
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IDP45E60XKSA2 Infineon-IDP45E60-DS-v02_05-en.pdf?fileId=db3a30432313ff5e01237a518c6e7be9
Виробник: Infineon Technologies
Description: IC IDP45E60 TO220-2
товару немає в наявності
В кошику  од. на суму  грн.
SP376571160XTMA1
Виробник: Infineon Technologies
Description: IC TPMS & INERTIA 14DSOSP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SIDC88D65DC8AX7SA2
Виробник: Infineon Technologies
Description: DIODE GENERAL PURPOSE 650V
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
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2ED2106S06FXUMA1 infineon-2ed2182-4-s06f-j-datasheet-en.pdf
2ED2106S06FXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-69
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+98.18 грн
10+68.62 грн
25+62.19 грн
100+51.66 грн
250+48.47 грн
500+46.54 грн
1000+45.04 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
TC264D40F200WBCKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC264D40F200WBCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.5MB (2.5M x 8)
RAM Size: 240K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 3 x Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-144-22
Number of I/O: 88
DigiKey Programmable: Not Verified
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1437.90 грн
10+1106.88 грн
25+1037.57 грн
100+902.22 грн
250+868.12 грн
500+847.58 грн
В кошику  од. на суму  грн.
TC234LP32F200FACKXUMA1 Infineon-TC23xAC_DS-DS-v01_00-EN.pdf?fileId=5546d462694c98b401695316f3d103ee
TC234LP32F200FACKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144TQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V
Connectivity: CANbus, FlexRay, LINbus, QSPI
Peripherals: DMA, WDT
Supplier Device Package: PG-TQFP-144-27
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 380 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1159.98 грн
10+887.14 грн
25+829.66 грн
100+719.31 грн
250+691.04 грн
В кошику  од. на суму  грн.
1ED44176N01FXUMA1 Infineon-1ED44176N01F-DataSheet-v02_02-EN.pdf?fileId=5546d46265487f7b01655c2d7ae77787
1ED44176N01FXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12.7V ~ 20V
Input Type: CMOS, TTL
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 25ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.2V, 1.7V
Current - Peak Output (Source, Sink): 800mA, 1.75A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2516 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5+74.43 грн
10+51.70 грн
25+46.63 грн
100+38.60 грн
250+36.13 грн
500+34.64 грн
1000+33.19 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
TC275T64F200WDCKXUMA1 infineon-tc27xdc-datasheet-en.pdf
TC275T64F200WDCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 40x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LQFP-176-22
Part Status: Active
Number of I/O: 112
DigiKey Programmable: Not Verified
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1783.92 грн
10+1379.69 грн
50+1244.22 грн
100+1128.31 грн
В кошику  од. на суму  грн.
IRS2008MTRPBFAUMA1 Infineon-IRS2008(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3
IRS2008MTRPBFAUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
IRS2008MTRPBFAUMA1 Infineon-IRS2008(S,M)-DataSheet-v01_00-EN.pdf?fileId=5546d46269e1c019016ae5475e943bd3
IRS2008MTRPBFAUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14MLPQ
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 14-MLPQ (4x4)
Rise / Fall Time (Typ): 70ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SIDC14D60E6X7SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC08D60C8X1SA3 Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC25T60SNCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/324ns
Test Condition: 400V, 30A, 11Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
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SIDC14D60C8X1SA1 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC04D60F6X7SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC61T60NCX1SA1 SIGC61T60NC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
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SIDC06D60E6X7SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIGC81T60NCX7SA1
SIGC81T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 95ns/200ns
Test Condition: 300V, 100A, 2.2Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
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SIDC14D60F6X7SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC42T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/130ns
Test Condition: 300V, 50A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
товару немає в наявності
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SIDC06D60F6X1SA4 SIDC06D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC14D60F6X1SA4 SIDC14D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC08D60C8X7SA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC14D60C8X7SA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D65C8X1SA1 Infineon-SIDC06D65C8_L4017C-DS-v01_00-en.pdf?fileId=db3a30433c9100bf013c915c15370045
SIDC06D65C8X1SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 650V 20A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
Current - Reverse Leakage @ Vr: 240 nA @ 650 V
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SIGC42T60SNCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
товару немає в наявності
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SIDC08D60C8X1SA2 Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60F6X7SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60F6X1SA2 SIDC06D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 15A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60E6X1SA1 SIDC06D60E6_ed1_3-12-01.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC14D60E6X1SA4 SIDC14D60E6_ed1_7-1-02.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIGC25T60UNX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
товару немає в наявності
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SIGC61T60NCX7SA1
SIGC61T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/170ns
Test Condition: 300V, 75A, 3Ohm, 15V
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
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SIDC14D60E6X1SA3 SIDC14D60E6_ed1_7-1-02.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC06D60E6X1SA4 SIDC06D60E6_ed1_3-12-01.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 10A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC04D60F6X1SA2 SIDC04D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC14D60C8X1SA3 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC14D60F6X1SA3 SIDC14D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC26D60C8X1SA1 Infineon-SIDC26D60C8_L4028M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c9039e2405834
SIDC26D60C8X1SA1
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 100 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 100
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
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SIDC08D60C8X1SA1 Infineon-SIDC08D60C8_L4022M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8feff14c5770
Виробник: Infineon Technologies
Description: DIODE GEN PURP 600V 30A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIDC04D60F6X1SA4 SIDC04D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 9A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 9A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIGC25T60NCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
товару немає в наявності
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SIDC14D60F6X1SA1 SIDC14D60F6_ed2.1_9-3-10.pdf
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 45A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 45 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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SIGC81T60SNCX7SA1
SIGC81T60SNCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/450ns
Test Condition: 400V, 100A, 3.3Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
товару немає в наявності
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SIDC14D60C8X1SA2 Infineon-SIDC14D60C8_L4024M-DS-v01_02-en.pdf?fileId=db3a30433c8a9179013c8ff64902577e
SIDC14D60C8X1SA2
Виробник: Infineon Technologies
Description: DIODE STANDARD 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
товару немає в наявності
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REFICL5102HVU150WTOBO1 Infineon-Referencedesign_REF-ICL-5102HV-U150W-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626eab8fbf016eac0dac4f0023
REFICL5102HVU150WTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICL5102HV
Packaging: Box
Voltage - Output: 17V ~ 48V
Voltage - Input: 277 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 3A
Utilized IC / Part: ICL5102HV
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
товару немає в наявності
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FS380R12A6T4BBPSA1 Infineon-FS380R12A6T4B-DataSheet-v03_01-EN.pdf?fileId=5546d4626da6c043016db9e750e268b1
FS380R12A6T4BBPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 380A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+46012.16 грн
В кошику  од. на суму  грн.
TLE92108232QXXUMA1 Infineon-TLE92108-232QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b3138d607ed
TLE92108232QXXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+129.97 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FS950R08A6P2BBPSA1 Infineon-FS950R08A6P2B-DataSheet-v03_00-EN.pdf?fileId=5546d4626da6c043016db9e7586868b4
FS950R08A6P2BBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 750V 950A AG-HYBRIDD-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 950 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 870 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+22856.83 грн
12+21039.27 грн
В кошику  од. на суму  грн.
TLS715B0TSNPBOARDTOBO1
TLS715B0TSNPBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL TLS715B0NAV50 LDO
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 4V ~ 40V
Current - Output: 150mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS715B0NAV50
Supplied Contents: Board(s)
Channels per IC: 1 - Single
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2048.38 грн
В кошику  од. на суму  грн.
TLE9210823QXAPPKITTOBO1 TLE92108-23QX_APPKIT_Web.pdf
TLE9210823QXAPPKITTOBO1
Виробник: Infineon Technologies
Description: EVAL MOSFET DRVR TLE92018 MOTIX
Packaging: Box
Function: Gate Driver
Type: Power Management
Utilized IC / Part: TLE9210823
Supplied Contents: Board(s)
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+3974.82 грн
В кошику  од. на суму  грн.
EVALM5E1B1245NSICTOBO1 Infineon-EVAL-M5-E1B1245N-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d4626cb27db2016d438785217e27
EVALM5E1B1245NSICTOBO1
Виробник: Infineon Technologies
Description: EVAL COOLSIC MOSFET MOTOR DRIVER
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDI20H12AH
Supplied Contents: Board(s)
товару немає в наявності
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TLE92108231QXXUMA1 Infineon-TLE92108-231QX-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749b323e140979
TLE92108231QXXUMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 28V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 950 V
Supplier Device Package: PG-VQFN-48-31
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Current - Peak Output (Source, Sink): 100mA, 100mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+125.04 грн
5000+118.09 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+135.61 грн
2000+127.42 грн
3000+125.84 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TLD22522EPXUMA1 Infineon-TLD2252-2EP-DataSheet-v01_00-EN.pdf?fileId=5546d4626da6c043016dba1517ee6995
TLD22522EPXUMA1
Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 14TSDSO
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 120mA
Internal Switch(s): No
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-TSDSO-14
Dimming: PWM
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Grade: Automotive
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+109.27 грн
10+76.55 грн
25+69.45 грн
100+57.83 грн
250+54.33 грн
500+52.22 грн
1000+49.65 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ICL5102HVXUMA1 Infineon-ICL5102HV-DataSheet-v01_02-EN.pdf?fileId=5546d4626c1f3dc3016c70f543a736d6
ICL5102HVXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER OFFL NO 19DSO
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width), 19 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.3MHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Half-Bridge
Supplier Device Package: PG-DSO-19-1
Dimming: No
Voltage - Supply (Min): 8.5V
Voltage - Supply (Max): 18V
Part Status: Active
на замовлення 3926 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+232.00 грн
10+167.90 грн
25+153.93 грн
100+130.04 грн
250+123.17 грн
500+121.49 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IRAUDAMP23 Infineon-IRAUDAMP23-DataSheet-v01_00-EN.pdf?fileId=5546d462677d0f4601679746020259b4
IRAUDAMP23
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS2452AM
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±80V ~ 160V
Max Output Power x Channels @ Load: 600W x 2 @ 20Ohm
Board Type: Fully Populated
Utilized IC / Part: IRS2452AM
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+20181.34 грн
В кошику  од. на суму  грн.