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IKB30N65ES5ATMA1 IKB30N65ES5ATMA1 Infineon Technologies Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 2244 шт:
термін постачання 21-31 дні (днів)
1+335.83 грн
10+213.81 грн
100+151.53 грн
500+117.26 грн
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XMC1301T038F0032ABXUMA1 XMC1301T038F0032ABXUMA1 Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2432 шт:
термін постачання 21-31 дні (днів)
2+179.85 грн
10+128.74 грн
25+117.59 грн
100+98.79 грн
250+93.28 грн
500+89.96 грн
1000+85.80 грн
Мінімальне замовлення: 2
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IPB50R299CPATMA1 IPB50R299CPATMA1 Infineon Technologies IPB50R299CP.pdf Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPB50R250CPATMA1 IPB50R250CPATMA1 Infineon Technologies IPB50R250CP.pdf Description: MOSFET N-CH 550V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
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IMZA65R039M1HXKSA1 IMZA65R039M1HXKSA1 Infineon Technologies Infineon-IMZA65R039M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c5f3b3c68 Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
1+880.96 грн
30+677.13 грн
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FD600R06ME3_B11_S2 Infineon Technologies FD600R06ME3_B11_S2.pdf Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
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FF300R12KT3EHOSA1 FF300R12KT3EHOSA1 Infineon Technologies Infineon-FF300R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b981ab7e0010 Description: IGBT MOD 1200V 480A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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T720N16TOFXPSA1 T720N16TOFXPSA1 Infineon Technologies Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+10881.11 грн
В кошику  од. на суму  грн.
T720N14TOFXPSA1 Infineon Technologies Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee Description: SCR MODULE 1800V 1500A DO200AB
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
3+9637.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T720N14TOFXPSA1 Infineon Technologies Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee Description: SCR MODULE 1800V 1500A DO200AB
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94-2518PBF Infineon Technologies Description: IC MOSFET
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F3L200R07PE4 Infineon Technologies INFNS28259-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)
2+13054.46 грн
Мінімальне замовлення: 2
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SPP04N50C3XKSA1 SPP04N50C3XKSA1 Infineon Technologies Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4 Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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BF 775 E6327 BF 775 E6327 Infineon Technologies BF775.pdf Description: RF TRANS NPN 15V 5GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
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SAFC165HLF SAFC165HLF Infineon Technologies INFNS04974-1.pdf?t.download=true&u=5oefqw Description: EMBEDDED UTAH, C166
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROM
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V
Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Active
Number of I/O: 72
DigiKey Programmable: Not Verified
на замовлення 31595 шт:
термін постачання 21-31 дні (днів)
19+1243.31 грн
Мінімальне замовлення: 19
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IRF7905TRPBF IRF7905TRPBF Infineon Technologies irf7905pbf.pdf?fileId=5546d462533600a40153560c90a41d37 Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7905TRPBF IRF7905TRPBF Infineon Technologies irf7905pbf.pdf?fileId=5546d462533600a40153560c90a41d37 Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IPI80N06S207AKSA1 IPI80N06S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
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TLE4953C Infineon Technologies Description: HALL EFFECT SENSOR
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TLE4953CHAMA3 TLE4953CHAMA3 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
2+160.75 грн
5+137.79 грн
10+131.27 грн
25+116.02 грн
50+111.10 грн
100+106.62 грн
500+95.98 грн
Мінімальне замовлення: 2
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TLE4953CHAMA3 TLE4953CHAMA3 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
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TLE4953HALA1 TLE4953HALA1 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAG SWITCH SPEC PURP SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+448.84 грн
10+323.93 грн
25+287.96 грн
50+256.73 грн
100+249.97 грн
500+209.43 грн
1000+192.71 грн
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TLE4953CBAMA1 TLE4953CBAMA1 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
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TLE4953CBAMA1 TLE4953CBAMA1 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
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TLE4955CE2AAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 41772 шт:
термін постачання 21-31 дні (днів)
126+177.36 грн
Мінімальне замовлення: 126
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TLE4955CE2AAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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TLE4957CE6747HAMA1 Infineon Technologies TLE4957C_PB_26092013.pdf?fileId=db3a3043414fd3ef014159b1f5a06bf1 Description: MAGNETIC SWITCH HALL EFF SSO-3
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TLE4957C2E6247HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11780 шт:
термін постачання 21-31 дні (днів)
140+159.55 грн
Мінімальне замовлення: 140
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TLE4957C2NE6747HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
на замовлення 47800 шт:
термін постачання 21-31 дні (днів)
176+127.29 грн
Мінімальне замовлення: 176
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TLE4957C2NE6747HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
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TLE4955HALA1 Infineon Technologies Sensor_Solutions_BR-2016.pdf?fileId=5546d461590352c501591664f5d40037 Description: IC SPEED SENSOR MAGN PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
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TLE4955CE41184AAMA1 TLE4955CE41184AAMA1 Infineon Technologies Infineon-TLE4955C%20E41184-DataSheet-v01_01-EN.pdf?fileId=5546d4626cb27db2016d5e59d0850619 Description: MAG SWITCH SPEC PURP SSO-2-53
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TLE4954CBE4XTMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAG SWITCH SPEC PURP SSO-2-53
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TLE4955CE4AAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAG SWITCH SPEC PURP SSO-2-53
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TLE4955E4HALA1 Infineon Technologies Description: IC SPEED SENSOR MAGN PG-SSO-2
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TLE4955CE4807BAMA1 Infineon Technologies Description: IC SPEED SENSOR MAGN PG-SSO-2
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TLE4955CE11184XAMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS PG-SSO-2
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CY62148ESL-55ZAXI CY62148ESL-55ZAXI Infineon Technologies Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1603 шт:
термін постачання 21-31 дні (днів)
1+509.32 грн
10+435.58 грн
25+415.42 грн
40+380.46 грн
80+367.05 грн
230+347.47 грн
440+330.44 грн
945+327.02 грн
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PSB21493HV1.7 PSB21493HV1.7 Infineon Technologies Description: INCA-S CODEC
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Function: CODEC
Interface: IOM-2
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of Circuits: 1
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
7+3507.93 грн
Мінімальне замовлення: 7
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SAF-C167CS-LMCA+ SAF-C167CS-LMCA+ Infineon Technologies INFNS01700-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
товару немає в наявності
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C167SRLMHA C167SRLMHA Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
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XC2286M72F80LRABKXUMA1 XC2286M72F80LRABKXUMA1 Infineon Technologies Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAB-C167CS-LMCA+ SAB-C167CS-LMCA+ Infineon Technologies INFNS17729-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
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SAF-C167CS-L33MCA+ SAF-C167CS-L33MCA+ Infineon Technologies INFNS01700-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: 1Y24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
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IPB100N08S207ATMA1 IPB100N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I100N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e4463ae7&ack=t Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
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TLF2931GV33 TLF2931GV33 Infineon Technologies tlf2931_ds_101.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
776+32.35 грн
Мінімальне замовлення: 776
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IRFS3006PBF IRFS3006PBF Infineon Technologies irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f description Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
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AUIRFS3006-7TRL AUIRFS3006-7TRL Infineon Technologies auirfs3006-7p.pdf?fileId=5546d462533600a4015355b6571e14b0 Description: MOSFET N-CH 60V 293A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
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ND260N12KHPSA1 Infineon Technologies Infineon-ND260N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4312fc453c5 Description: DIODE GP 1.2KV 104A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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T560N12TOFXPSA1 Infineon Technologies T560N.pdf Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
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T3160N12TOFVTXPSA1 T3160N12TOFVTXPSA1 Infineon Technologies T3160N.pdf Description: SCR MODULE 1800V 7000A DO200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 7000 A
Voltage - Off State: 1.8 kV
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DD260N12KHPSA1 DD260N12KHPSA1 Infineon Technologies DD260N.pdf Description: DIODE MOD GP 1200V 260A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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DD260N12KKHPSA1 DD260N12KKHPSA1 Infineon Technologies DD260N.pdf Description: DIODE MOD GP 1200V 260A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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DD260N12KAHPSA1 DD260N12KAHPSA1 Infineon Technologies DD260N.pdf Description: DIODE MOD GP 1200V 260A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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IPP80P03P4L07AKSA1 IPP80P03P4L07AKSA1 Infineon Technologies IPx80P03P4L-07.pdf Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
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EVALM105F310RTOBO1 EVALM105F310RTOBO1 Infineon Technologies Infineon-UG-2020-24-EVAL-M1-05F310R-UserManual-v01_00-EN.pdf?fileId=5546d4627762291e01778cd09cc02d8a Description: EVAL BOARD FOR IRSM005-301MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM005-301MH
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+9163.75 грн
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EVALM105F804RTOBO1 EVALM105F804RTOBO1 Infineon Technologies Infineon-UG-2020-25-EVAL-M1-05F804R-UserManual-v01_00-EN.pdf?fileId=5546d4627762291e01778cd0bbe42d93 Description: EVAL BOARD FOR IRSM005-800MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM005-800MH
Supplied Contents: Board(s)
Primary Attributes: 6VAC ~ 30VAC Input Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9093.72 грн
В кошику  од. на суму  грн.
IFX1117MEVHTMA1 IFX1117MEVHTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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IFX1117MEVHTMA1 IFX1117MEVHTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
товару немає в наявності
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PSB2186FV1.1D Infineon Technologies SIEMS00944-1.pdf?t.download=true&u=5oefqw Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-TQFP-64-1
Part Status: Active
Number of Circuits: 1
на замовлення 3810 шт:
термін постачання 21-31 дні (днів)
36+645.27 грн
Мінімальне замовлення: 36
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IKB30N65ES5ATMA1 Infineon-IKB30N65ES5-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0162cd135b40491d
IKB30N65ES5ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 2244 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+335.83 грн
10+213.81 грн
100+151.53 грн
500+117.26 грн
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XMC1301T038F0032ABXUMA1
XMC1301T038F0032ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2432 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.85 грн
10+128.74 грн
25+117.59 грн
100+98.79 грн
250+93.28 грн
500+89.96 грн
1000+85.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB50R299CPATMA1 IPB50R299CP.pdf
IPB50R299CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPB50R250CPATMA1 IPB50R250CP.pdf
IPB50R250CPATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 550V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
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IMZA65R039M1HXKSA1 Infineon-IMZA65R039M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4627862c3e501786e0c5f3b3c68
IMZA65R039M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -2V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1393 pF @ 400 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+880.96 грн
30+677.13 грн
В кошику  од. на суму  грн.
FD600R06ME3_B11_S2 FD600R06ME3_B11_S2.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 600V 600A 2250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 60 nF @ 25 V
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FF300R12KT3EHOSA1 Infineon-FF300R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a304313b8b5a60113b981ab7e0010
FF300R12KT3EHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 480A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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T720N16TOFXPSA1 Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee
T720N16TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 720 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10881.11 грн
В кошику  од. на суму  грн.
T720N14TOFXPSA1 Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+9637.52 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T720N14TOFXPSA1 Infineon-T720N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ff97c57f5bee
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
товару немає в наявності
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94-2518PBF
Виробник: Infineon Technologies
Description: IC MOSFET
товару немає в наявності
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F3L200R07PE4 INFNS28259-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO4-1-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+13054.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SPP04N50C3XKSA1 Infineon-SPP_A04N50C3-DS-v02_09-en.pdf?fileId=db3a304412b407950112b42cfc9247e4
SPP04N50C3XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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BF 775 E6327 BF775.pdf
BF 775 E6327
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
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SAFC165HLF INFNS04974-1.pdf?t.download=true&u=5oefqw
SAFC165HLF
Виробник: Infineon Technologies
Description: EMBEDDED UTAH, C166
Packaging: Bulk
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 3K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROM
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.97V ~ 3.63V
Connectivity: HDLC, IOM-2/PCM, IrDA, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-TQFP-144-7
Part Status: Active
Number of I/O: 72
DigiKey Programmable: Not Verified
на замовлення 31595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+1243.31 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
IRF7905TRPBF irf7905pbf.pdf?fileId=5546d462533600a40153560c90a41d37
IRF7905TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IRF7905TRPBF irf7905pbf.pdf?fileId=5546d462533600a40153560c90a41d37
IRF7905TRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.8A/8.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
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IPI80N06S207AKSA1 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t
IPI80N06S207AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
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TLE4953C
Виробник: Infineon Technologies
Description: HALL EFFECT SENSOR
товару немає в наявності
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TLE4953CHAMA3 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953CHAMA3
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+160.75 грн
5+137.79 грн
10+131.27 грн
25+116.02 грн
50+111.10 грн
100+106.62 грн
500+95.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE4953CHAMA3 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953CHAMA3
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
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TLE4953HALA1 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953HALA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-1
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-1
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+448.84 грн
10+323.93 грн
25+287.96 грн
50+256.73 грн
100+249.97 грн
500+209.43 грн
1000+192.71 грн
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TLE4953CBAMA1 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953CBAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
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TLE4953CBAMA1 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953CBAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
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TLE4955CE2AAMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
на замовлення 41772 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
126+177.36 грн
Мінімальне замовлення: 126
В кошику  од. на суму  грн.
TLE4955CE2AAMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
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TLE4957CE6747HAMA1 TLE4957C_PB_26092013.pdf?fileId=db3a3043414fd3ef014159b1f5a06bf1
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
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TLE4957C2E6247HAMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
140+159.55 грн
Мінімальне замовлення: 140
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TLE4957C2NE6747HAMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Part Status: Obsolete
на замовлення 47800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
176+127.29 грн
Мінімальне замовлення: 176
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TLE4957C2NE6747HAMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Tape & Box (TB)
Part Status: Obsolete
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TLE4955HALA1 Sensor_Solutions_BR-2016.pdf?fileId=5546d461590352c501591664f5d40037
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE4955CE41184AAMA1 Infineon-TLE4955C%20E41184-DataSheet-v01_01-EN.pdf?fileId=5546d4626cb27db2016d5e59d0850619
TLE4955CE41184AAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
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TLE4954CBE4XTMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
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TLE4955CE4AAMA1 Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
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TLE4955E4HALA1
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
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TLE4955CE4807BAMA1
Виробник: Infineon Technologies
Description: IC SPEED SENSOR MAGN PG-SSO-2
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TLE4955CE11184XAMA1
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
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CY62148ESL-55ZAXI Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ESL-55ZAXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.32 грн
10+435.58 грн
25+415.42 грн
40+380.46 грн
80+367.05 грн
230+347.47 грн
440+330.44 грн
945+327.02 грн
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PSB21493HV1.7
PSB21493HV1.7
Виробник: Infineon Technologies
Description: INCA-S CODEC
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Function: CODEC
Interface: IOM-2
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of Circuits: 1
на замовлення 793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+3507.93 грн
Мінімальне замовлення: 7
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SAF-C167CS-LMCA+ INFNS01700-1.pdf?t.download=true&u=5oefqw
SAF-C167CS-LMCA+
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
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C167SRLMHA
C167SRLMHA
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Part Status: Active
Number of I/O: 111
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XC2286M72F80LRABKXUMA1
XC2286M72F80LRABKXUMA1
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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SAB-C167CS-LMCA+ INFNS17729-1.pdf?t.download=true&u=5oefqw
SAB-C167CS-LMCA+
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-6
Part Status: Active
Number of I/O: 111
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SAF-C167CS-L33MCA+ INFNS01700-1.pdf?t.download=true&u=5oefqw
SAF-C167CS-L33MCA+
Виробник: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 33MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: 1Y24x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
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IPB100N08S207ATMA1 Infineon-IPP_B_I100N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e4463ae7&ack=t
IPB100N08S207ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
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TLF2931GV33 tlf2931_ds_101.pdf?t.download=true&u=5oefqw
TLF2931GV33
Виробник: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
776+32.35 грн
Мінімальне замовлення: 776
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IRFS3006PBF description irfs3006pbf.pdf?fileId=5546d462533600a4015356364a7a214f
IRFS3006PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
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AUIRFS3006-7TRL auirfs3006-7p.pdf?fileId=5546d462533600a4015355b6571e14b0
AUIRFS3006-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 293A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
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ND260N12KHPSA1 Infineon-ND260N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4312fc453c5
Виробник: Infineon Technologies
Description: DIODE GP 1.2KV 104A PB50ND-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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T560N12TOFXPSA1 T560N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 809A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 559 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 809 A
Voltage - Off State: 1.8 kV
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T3160N12TOFVTXPSA1 T3160N.pdf
T3160N12TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 7000A DO200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 7000 A
Voltage - Off State: 1.8 kV
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DD260N12KHPSA1 DD260N.pdf
DD260N12KHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 1200V 260A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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DD260N12KKHPSA1 DD260N.pdf
DD260N12KKHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 1200V 260A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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DD260N12KAHPSA1 DD260N.pdf
DD260N12KAHPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 1200V 260A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Module
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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IPP80P03P4L07AKSA1 IPx80P03P4L-07.pdf
IPP80P03P4L07AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 130µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
Qualification: AEC-Q101
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EVALM105F310RTOBO1 Infineon-UG-2020-24-EVAL-M1-05F310R-UserManual-v01_00-EN.pdf?fileId=5546d4627762291e01778cd09cc02d8a
EVALM105F310RTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRSM005-301MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM005-301MH
Supplied Contents: Board(s)
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9163.75 грн
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EVALM105F804RTOBO1 Infineon-UG-2020-25-EVAL-M1-05F804R-UserManual-v01_00-EN.pdf?fileId=5546d4627762291e01778cd0bbe42d93
EVALM105F804RTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRSM005-800MH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IRSM005-800MH
Supplied Contents: Board(s)
Primary Attributes: 6VAC ~ 30VAC Input Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: Yes, MCU
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9093.72 грн
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IFX1117MEVHTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEVHTMA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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IFX1117MEVHTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEVHTMA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Max): 13.6V
Voltage - Output (Min/Fixed): 1.25V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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PSB2186FV1.1D SIEMS00944-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: ISAC-S TE ISDN ACCESS CONTROLLER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: ISDN
Interface: 4-Wire, IOM-2
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 17mA
Supplier Device Package: P-TQFP-64-1
Part Status: Active
Number of Circuits: 1
на замовлення 3810 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
36+645.27 грн
Мінімальне замовлення: 36
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