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S29AL016J70TFI020 S29AL016J70TFI020 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Verified
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
2+220.83 грн
10+198.42 грн
25+192.58 грн
96+172.67 грн
192+168.54 грн
288+166.13 грн
576+159.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29AL016J70FFI010 S29AL016J70FFI010 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29AL016J70FAN020 S29AL016J70FAN020 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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S29AL016J70BFA023 S29AL016J70BFA023 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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S29AL016J70BFA023 S29AL016J70BFA023 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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S29AL016J70TFM010 S29AL016J70TFM010 Infineon Technologies Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803 Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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IRS2509CD Infineon Technologies Part_Number_Guide_Web.pdf Description: IC GATE DRVR MOSFET
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF524LPMC1-G-MNE2 CY9BF524LPMC1-G-MNE2 Infineon Technologies Infineon-CY9B520M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb80555e92 Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+553.28 грн
10+411.00 грн
25+380.64 грн
160+317.68 грн
320+307.47 грн
480+302.35 грн
960+290.01 грн
В кошику  од. на суму  грн.
IRF3710PBF 101D324.1 750 IRF3710PBF 101D324.1 750 Infineon Technologies Description: IRF3710 - 100V N-Channel Power M
Packaging: Bulk
Part Status: Active
товару немає в наявності
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CYPD2122-24LQXIT CYPD2122-24LQXIT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+80.02 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYPD2122-24LQXIT CYPD2122-24LQXIT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 3808 шт:
термін постачання 21-31 дні (днів)
3+156.59 грн
10+111.20 грн
25+101.36 грн
100+84.99 грн
250+80.15 грн
500+77.24 грн
1000+73.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE3BR4765JFKLA1 ICE3BR4765JFKLA1 Infineon Technologies Datasheet_ICE3BR4765J_v2_2_10Jun08.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a3043156fd5730115da40851e152a Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 27 W
на замовлення 1856 шт:
термін постачання 21-31 дні (днів)
3+121.26 грн
10+85.99 грн
50+73.51 грн
100+65.34 грн
250+61.50 грн
500+59.18 грн
1000+56.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE3BR0665JXKLA1 ICE3BR0665JXKLA1 Infineon Technologies Datasheet_ICE3BR0665J_v2_2_4Jul2011.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431a5c32f2011a7a6233036886 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 74 W
на замовлення 1751 шт:
термін постачання 21-31 дні (днів)
2+175.06 грн
10+125.50 грн
50+108.12 грн
100+96.42 грн
250+91.09 грн
500+87.87 грн
1000+83.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ICE3BR1765JZXKLA1 ICE3BR1765JZXKLA1 Infineon Technologies Infineon-ICE3BR1765JZ-DS-v02_01-en.pdf?fileId=db3a3043243b5f170124ec0e3d1951a3 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Not For New Designs
Power (Watts): 44.5 W
товару немає в наявності
В кошику  од. на суму  грн.
ICE3BR0665JZXKLA1 ICE3BR0665JZXKLA1 Infineon Technologies Infineon-ICE3BR0665JZ-DS-v02_01-en.pdf?fileId=db3a3043243b5f170124ec0a674a519e Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Not For New Designs
Power (Watts): 74 W
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IGW75N65H5XKSA1 IGW75N65H5XKSA1 Infineon Technologies Infineon-IGW75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df745d10c4394 Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
на замовлення 503 шт:
термін постачання 21-31 дні (днів)
1+406.33 грн
30+221.34 грн
120+183.88 грн
В кошику  од. на суму  грн.
IRF4905LPBF IRF4905LPBF Infineon Technologies irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 description Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
3+127.68 грн
50+83.56 грн
100+83.20 грн
500+77.08 грн
1000+73.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KITXMCLINKSEGGERV1TOBO1 KITXMCLINKSEGGERV1TOBO1 Infineon Technologies Infineon-ProductBrief_XMC_Link_Isolated_Debug_Probe.pdf-PB-v01_00-EN.pdf?fileId=5546d462518ffd85015245043db55e93 Description: ISOLATED DEBUG PROBE FOR XMC WIT
Packaging: Box
For Use With/Related Products: XMC
Type: Debugger
Contents: Board(s)
Part Status: Active
Utilized IC / Part: XMC
товару немає в наявності
В кошику  од. на суму  грн.
FP50R12KS4CBOSA1 FP50R12KS4CBOSA1 Infineon Technologies Infineon-FP50R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a7045175 Description: IGBT MOD 1200V 70A 360W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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FP50R12W3T7B11BPSA1 FP50R12W3T7B11BPSA1 Infineon Technologies Infineon-FP50R12W3T7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18af214838c3 Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6355.88 грн
В кошику  од. на суму  грн.
FP50R12KT4PBPSA1 FP50R12KT4PBPSA1 Infineon Technologies Infineon-FP50R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb225903fd Description: IGBT MOD 1200V 100A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+9041.97 грн
10+8060.09 грн
В кошику  од. на суму  грн.
FP50R12W2T7PBPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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FP50R12N2T7B16BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
товару немає в наявності
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FP50R12N2T4PB81BPSA2 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
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FP50R12N2T4B16BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Part Status: Active
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FP50R12N2T4B86BPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
товару немає в наявності
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PVT422PBF PVT422PBF Infineon Technologies pvt422.pdf?fileId=5546d462533600a401535684473f2973 description Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 8-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 2505 шт:
термін постачання 21-31 дні (днів)
1+744.40 грн
10+638.11 грн
25+609.31 грн
50+552.21 грн
100+533.26 грн
250+509.18 грн
500+483.62 грн
1000+466.98 грн
В кошику  од. на суму  грн.
PVT422SPBF PVT422SPBF Infineon Technologies pvt422.pdf?fileId=5546d462533600a401535684473f2973 description Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
на замовлення 1734 шт:
термін постачання 21-31 дні (днів)
1+746.81 грн
10+640.58 грн
25+611.69 грн
50+554.35 грн
100+535.33 грн
250+511.16 грн
500+485.49 грн
1000+468.79 грн
В кошику  од. на суму  грн.
S25FL128SAGBHI303 S25FL128SAGBHI303 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TZ800N16KOFHPSA3 TZ800N16KOFHPSA3 Infineon Technologies Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29 Description: SCR MODULE 1.6KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.6 kV
товару немає в наявності
В кошику  од. на суму  грн.
SPW20N60C3FKSA1 SPW20N60C3FKSA1 Infineon Technologies SPW20N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e3702497f Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1832 шт:
термін постачання 21-31 дні (днів)
1+382.24 грн
30+207.24 грн
120+171.97 грн
510+137.12 грн
1020+135.24 грн
В кошику  од. на суму  грн.
SPP20N60S5XKSA1 SPP20N60S5XKSA1 Infineon Technologies SPP20N60S5_rev2.8_2009-12-01.pdf Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 6770 шт:
термін постачання 21-31 дні (днів)
1+332.45 грн
50+166.08 грн
100+151.16 грн
500+117.31 грн
1000+112.56 грн
В кошику  од. на суму  грн.
SPP20N60C3XKSA1 SPP20N60C3XKSA1 Infineon Technologies SPx20N60C3.pdf Description: MOSFET N-CH 600V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
2+249.74 грн
50+129.51 грн
100+121.57 грн
500+110.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKQ120N60TXKSA1 IKQ120N60TXKSA1 Infineon Technologies Infineon-IKQ120N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d230bd094df7 Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 241 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/565ns
Switching Energy: 6.2mJ (on), 5.9mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 703 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
на замовлення 1296 шт:
термін постачання 21-31 дні (днів)
1+887.33 грн
30+515.93 грн
120+441.65 грн
510+396.57 грн
В кошику  од. на суму  грн.
IKP20N60H3XKSA1 IKP20N60H3XKSA1 Infineon Technologies IKP20N60H3_rev1.1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432b16d655012b199c4f6a2d17 Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
товару немає в наявності
В кошику  од. на суму  грн.
FF600R12IE4BOSA1 FF600R12IE4BOSA1 Infineon Technologies Infineon-FF600R12IE4-DS-v02_04-en.pdf?fileId=db3a30431f848401011febaeac813ece Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+26072.36 грн
В кошику  од. на суму  грн.
FF600R12IP4BOSA1 FF600R12IP4BOSA1 Infineon Technologies Infineon-FF600R12IP4-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011feb94350f3eb9 Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+30473.70 грн
В кошику  од. на суму  грн.
FF600R12ME4B72BOSA1 FF600R12ME4B72BOSA1 Infineon Technologies Infineon-FF600R12ME4_B72-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e949c2d312e12 Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+20720.25 грн
В кошику  од. на суму  грн.
FF650R17IE4BOSA1 FF650R17IE4BOSA1 Infineon Technologies Infineon-FF650R17IE4-DS-v03_03-en_de.pdf?fileId=db3a30431ff9881501201dcfe2a54986 Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+34765.83 грн
В кошику  од. на суму  грн.
FF600R12KE4BOSA1 FF600R12KE4BOSA1 Infineon Technologies Infineon-FF600R12KE4-DS-v02_02-EN.pdf?fileId=5546d46254e133b401550b1aeaef35e0 Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+12667.60 грн
В кошику  од. на суму  грн.
FF600R12ME4BOSA1 FF600R12ME4BOSA1 Infineon Technologies Infineon-FF600R12ME4-DS-v02_02-en_de.pdf?fileId=db3a30432a40a650012a40f9eac70002 Description: IGBT MODULE 1200V 4050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+22687.65 грн
10+20463.04 грн
В кошику  од. на суму  грн.
S25FS512SAGBHV213 S25FS512SAGBHV213 Infineon Technologies Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
TLE4983CHTNE6747HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Bulk
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
108+209.67 грн
Мінімальне замовлення: 108
В кошику  од. на суму  грн.
CY7C107D-10VXI CY7C107D-10VXI Infineon Technologies Infineon-CY7C107D_CY7C1007D_1-Mbit_(1M_x_1)_Static_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2ac23343&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FF2400RB12IP7PBPSA1 FF2400RB12IP7PBPSA1 Infineon Technologies Description: PP IHM I XHP 1 7KV AG-PRIME3+-71
Packaging: Tray
Input: Standard
Configuration: 2 Independent
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 750 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+108013.04 грн
В кошику  од. на суму  грн.
IRLSL4030PBF IRLSL4030PBF Infineon Technologies irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715 Description: MOSFET N-CH 100V 180A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
товару немає в наявності
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1EDS20I12SVXUMA1 1EDS20I12SVXUMA1 Infineon Technologies Infineon-1EDS20I12SV-DS-v00_73-en.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1 Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+345.71 грн
2000+326.07 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IKW40T120FKSA1 IKW40T120FKSA1 Infineon Technologies IKW40T120_Rev2G_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4289c3b3e35 Description: IGBT NPT FS 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
товару немає в наявності
В кошику  од. на суму  грн.
FZ400R12KS4HOSA1 FZ400R12KS4HOSA1 Infineon Technologies Infineon-FZ400R12KS4-DS-v03_04-en_de.pdf?fileId=db3a304412b407950112b4336f045caa Description: IGBT MOD 1200V 510A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPW35N60CFDFKSA1 SPW35N60CFDFKSA1 Infineon Technologies SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651 Description: MOSFET N-CH 600V 34.1A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 21.6A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 25 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
1+713.08 грн
30+407.77 грн
120+346.54 грн
В кошику  од. на суму  грн.
P2000DE45X168HPSA1 Infineon Technologies Description: PRESS PACK IGBT
Packaging: Tray
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
FZ400R12KE3HOSA1 FZ400R12KE3HOSA1 Infineon Technologies Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71 Description: IGBT MOD 1200V 650A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9079.72 грн
В кошику  од. на суму  грн.
FZ400R12KP4HOSA1 FZ400R12KP4HOSA1 Infineon Technologies Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293 Description: IGBT MOD 1200V 400A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+8392.33 грн
В кошику  од. на суму  грн.
FZ400R12KE3B1HOSA1 FZ400R12KE3B1HOSA1 Infineon Technologies Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75 Description: IGBT MOD 1200V 650A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+8729.60 грн
В кошику  од. на суму  грн.
FZ600R12KE4HOSA1 FZ600R12KE4HOSA1 Infineon Technologies Infineon-FZ600R12KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb7bb4ece5939 Description: IGBT MOD 1200V 600A 3000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.7 nF @ 25 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
1+7676.04 грн
10+6210.57 грн
В кошику  од. на суму  грн.
FZ600R17KE3HOSA1 FZ600R17KE3HOSA1 Infineon Technologies Infineon-FZ600R17KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43044fb4fda Description: IGBT MOD 1700V 840A 3150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 840 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+14064.04 грн
10+12502.71 грн
В кошику  од. на суму  грн.
FZ600R17KE4HOSA1 FZ600R17KE4HOSA1 Infineon Technologies Infineon-FZ600R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401294a1c37557de9 Description: IGBT MOD 1700V 1200A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
1+9718.11 грн
10+8216.13 грн
В кошику  од. на суму  грн.
FZ600R12KS4HOSA1 FZ600R12KS4HOSA1 Infineon Technologies Infineon-FZ600R12KS4-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b43370005cae Description: IGBT MOD 1200V 700A 3900W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+12336.75 грн
В кошику  од. на суму  грн.
FZ600R65KE3NOSA1 FZ600R65KE3NOSA1 Infineon Technologies Infineon-FZ600R65KE3-DS-v03_00-EN.pdf?fileId=db3a30432c64a60d012cbbecaa6f0356 Description: IGBT MOD 6500V 600A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
FZ600R17KE3S4HOSA1 FZ600R17KE3S4HOSA1 Infineon Technologies Infineon-FZ600R17KE3_S4-DS-v03_00-en_de.pdf?fileId=db3a3043416e106e014173bd63163a3b Description: IGBT MOD 1700V 1200A 3150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товару немає в наявності
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S29AL016J70TFI020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J70TFI020
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Verified
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+220.83 грн
10+198.42 грн
25+192.58 грн
96+172.67 грн
192+168.54 грн
288+166.13 грн
576+159.38 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S29AL016J70FFI010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J70FFI010
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29AL016J70FAN020 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J70FAN020
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29AL016J70BFA023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J70BFA023
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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S29AL016J70BFA023 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J70BFA023
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-FBGA (8.15x6.15)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29AL016J70TFM010 Infineon-S29AL016J_16_MBIT_(2M_X_8_BIT_1M_X_16_BIT)_3_V_BOOT_SECTOR_FLASH-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed709c05803
S29AL016J70TFM010
Виробник: Infineon Technologies
Description: IC FLASH 16MBIT PARALLEL 48TSOP
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IRS2509CD Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: IC GATE DRVR MOSFET
Packaging: Bulk
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
CY9BF524LPMC1-G-MNE2 Infineon-CY9B520M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb80555e92
CY9BF524LPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 23x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+553.28 грн
10+411.00 грн
25+380.64 грн
160+317.68 грн
320+307.47 грн
480+302.35 грн
960+290.01 грн
В кошику  од. на суму  грн.
IRF3710PBF 101D324.1 750
IRF3710PBF 101D324.1 750
Виробник: Infineon Technologies
Description: IRF3710 - 100V N-Channel Power M
Packaging: Bulk
Part Status: Active
товару немає в наявності
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CYPD2122-24LQXIT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD2122-24LQXIT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+80.02 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CYPD2122-24LQXIT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD2122-24LQXIT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
Number of I/O: 14
DigiKey Programmable: Not Verified
на замовлення 3808 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.59 грн
10+111.20 грн
25+101.36 грн
100+84.99 грн
250+80.15 грн
500+77.24 грн
1000+73.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE3BR4765JFKLA1 Datasheet_ICE3BR4765J_v2_2_10Jun08.pdf?folderId=db3a3043156fd5730115da1adffb1528&fileId=db3a3043156fd5730115da40851e152a
ICE3BR4765JFKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 27 W
на замовлення 1856 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.26 грн
10+85.99 грн
50+73.51 грн
100+65.34 грн
250+61.50 грн
500+59.18 грн
1000+56.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ICE3BR0665JXKLA1 Datasheet_ICE3BR0665J_v2_2_4Jul2011.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431a5c32f2011a7a6233036886
ICE3BR0665JXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 74 W
на замовлення 1751 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.06 грн
10+125.50 грн
50+108.12 грн
100+96.42 грн
250+91.09 грн
500+87.87 грн
1000+83.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ICE3BR1765JZXKLA1 Infineon-ICE3BR1765JZ-DS-v02_01-en.pdf?fileId=db3a3043243b5f170124ec0e3d1951a3
ICE3BR1765JZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Not For New Designs
Power (Watts): 44.5 W
товару немає в наявності
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ICE3BR0665JZXKLA1 Infineon-ICE3BR0665JZ-DS-v02_01-en.pdf?fileId=db3a3043243b5f170124ec0a674a519e
ICE3BR0665JZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Not For New Designs
Power (Watts): 74 W
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IGW75N65H5XKSA1 Infineon-IGW75N65H5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df745d10c4394
IGW75N65H5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 120A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.25mJ (on), 950µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
на замовлення 503 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+406.33 грн
30+221.34 грн
120+183.88 грн
В кошику  од. на суму  грн.
IRF4905LPBF description irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
IRF4905LPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.68 грн
50+83.56 грн
100+83.20 грн
500+77.08 грн
1000+73.58 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KITXMCLINKSEGGERV1TOBO1 Infineon-ProductBrief_XMC_Link_Isolated_Debug_Probe.pdf-PB-v01_00-EN.pdf?fileId=5546d462518ffd85015245043db55e93
KITXMCLINKSEGGERV1TOBO1
Виробник: Infineon Technologies
Description: ISOLATED DEBUG PROBE FOR XMC WIT
Packaging: Box
For Use With/Related Products: XMC
Type: Debugger
Contents: Board(s)
Part Status: Active
Utilized IC / Part: XMC
товару немає в наявності
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FP50R12KS4CBOSA1 Infineon-FP50R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a7045175
FP50R12KS4CBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 360W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 360 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
товару немає в наявності
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FP50R12W3T7B11BPSA1 Infineon-FP50R12W3T7_B11-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18af214838c3
FP50R12W3T7B11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 13 µA
Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6355.88 грн
В кошику  од. на суму  грн.
FP50R12KT4PBPSA1 Infineon-FP50R12KT4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b57eb225903fd
FP50R12KT4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9041.97 грн
10+8060.09 грн
В кошику  од. на суму  грн.
FP50R12W2T7PBPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
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FP50R12N2T7B16BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
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FP50R12N2T4PB81BPSA2
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
товару немає в наявності
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FP50R12N2T4B16BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-711
Packaging: Tray
Part Status: Active
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FP50R12N2T4B86BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
PVT422PBF description pvt422.pdf?fileId=5546d462533600a401535684473f2973
PVT422PBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 120 mA
Supplier Device Package: 8-DIP
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
на замовлення 2505 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+744.40 грн
10+638.11 грн
25+609.31 грн
50+552.21 грн
100+533.26 грн
250+509.18 грн
500+483.62 грн
1000+466.98 грн
В кошику  од. на суму  грн.
PVT422SPBF description pvt422.pdf?fileId=5546d462533600a401535684473f2973
PVT422SPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 120MA 0-400V
Packaging: Tube
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 120 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 400 V
On-State Resistance (Max): 35 Ohms
на замовлення 1734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+746.81 грн
10+640.58 грн
25+611.69 грн
50+554.35 грн
100+535.33 грн
250+511.16 грн
500+485.49 грн
1000+468.79 грн
В кошику  од. на суму  грн.
S25FL128SAGBHI303 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGBHI303
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Part Status: Active
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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TZ800N16KOFHPSA3 Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29
TZ800N16KOFHPSA3
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.6 kV
товару немає в наявності
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SPW20N60C3FKSA1 SPW20N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e3702497f
SPW20N60C3FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1832 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+382.24 грн
30+207.24 грн
120+171.97 грн
510+137.12 грн
1020+135.24 грн
В кошику  од. на суму  грн.
SPP20N60S5XKSA1 SPP20N60S5_rev2.8_2009-12-01.pdf
SPP20N60S5XKSA1
Виробник: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
на замовлення 6770 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+332.45 грн
50+166.08 грн
100+151.16 грн
500+117.31 грн
1000+112.56 грн
В кошику  од. на суму  грн.
SPP20N60C3XKSA1 SPx20N60C3.pdf
SPP20N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.74 грн
50+129.51 грн
100+121.57 грн
500+110.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKQ120N60TXKSA1 Infineon-IKQ120N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d230bd094df7
IKQ120N60TXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 241 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/565ns
Switching Energy: 6.2mJ (on), 5.9mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 703 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
на замовлення 1296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+887.33 грн
30+515.93 грн
120+441.65 грн
510+396.57 грн
В кошику  од. на суму  грн.
IKP20N60H3XKSA1 IKP20N60H3_rev1.1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432b16d655012b199c4f6a2d17
IKP20N60H3XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 690µJ
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
товару немає в наявності
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FF600R12IE4BOSA1 Infineon-FF600R12IE4-DS-v02_04-en.pdf?fileId=db3a30431f848401011febaeac813ece
FF600R12IE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+26072.36 грн
В кошику  од. на суму  грн.
FF600R12IP4BOSA1 Infineon-FF600R12IP4-DS-v02_04-en_de.pdf?fileId=db3a30431f848401011feb94350f3eb9
FF600R12IP4BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+30473.70 грн
В кошику  од. на суму  грн.
FF600R12ME4B72BOSA1 Infineon-FF600R12ME4_B72-DS-v03_00-EN.pdf?fileId=5546d4625e763904015e949c2d312e12
FF600R12ME4B72BOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+20720.25 грн
В кошику  од. на суму  грн.
FF650R17IE4BOSA1 Infineon-FF650R17IE4-DS-v03_03-en_de.pdf?fileId=db3a30431ff9881501201dcfe2a54986
FF650R17IE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 4150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+34765.83 грн
В кошику  од. на суму  грн.
FF600R12KE4BOSA1 Infineon-FF600R12KE4-DS-v02_02-EN.pdf?fileId=5546d46254e133b401550b1aeaef35e0
FF600R12KE4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12667.60 грн
В кошику  од. на суму  грн.
FF600R12ME4BOSA1 Infineon-FF600R12ME4-DS-v02_02-en_de.pdf?fileId=db3a30432a40a650012a40f9eac70002
FF600R12ME4BOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 4050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 4050 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22687.65 грн
10+20463.04 грн
В кошику  од. на суму  грн.
S25FS512SAGBHV213 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
S25FS512SAGBHV213
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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TLE4983CHTNE6747HAMA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Bulk
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
108+209.67 грн
Мінімальне замовлення: 108
В кошику  од. на суму  грн.
CY7C107D-10VXI Infineon-CY7C107D_CY7C1007D_1-Mbit_(1M_x_1)_Static_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2ac23343&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C107D-10VXI
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 1
DigiKey Programmable: Not Verified
товару немає в наявності
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FF2400RB12IP7PBPSA1
FF2400RB12IP7PBPSA1
Виробник: Infineon Technologies
Description: PP IHM I XHP 1 7KV AG-PRIME3+-71
Packaging: Tray
Input: Standard
Configuration: 2 Independent
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 750 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+108013.04 грн
В кошику  од. на суму  грн.
IRLSL4030PBF irls4030pbf.pdf?fileId=5546d462533600a401535671e1fd2715
IRLSL4030PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
товару немає в наявності
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1EDS20I12SVXUMA1 Infineon-1EDS20I12SV-DS-v00_73-en.pdf?fileId=5546d46145f1f3a40145faf0aa200fc1
1EDS20I12SVXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Part Status: Active
Number of Channels: 1
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+345.71 грн
2000+326.07 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
IKW40T120FKSA1 IKW40T120_Rev2G_2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4289c3b3e35
IKW40T120FKSA1
Виробник: Infineon Technologies
Description: IGBT NPT FS 1200V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 48ns/480ns
Switching Energy: 6.5mJ
Test Condition: 600V, 40A, 15Ohm, 15V
Gate Charge: 203 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 270 W
товару немає в наявності
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FZ400R12KS4HOSA1 Infineon-FZ400R12KS4-DS-v03_04-en_de.pdf?fileId=db3a304412b407950112b4336f045caa
FZ400R12KS4HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 510A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
SPW35N60CFDFKSA1 SPW35N60CFD_Rev.1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c05a24651
SPW35N60CFDFKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 34.1A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc)
Rds On (Max) @ Id, Vgs: 118mOhm @ 21.6A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.9mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 25 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+713.08 грн
30+407.77 грн
120+346.54 грн
В кошику  од. на суму  грн.
P2000DE45X168HPSA1
Виробник: Infineon Technologies
Description: PRESS PACK IGBT
Packaging: Tray
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
FZ400R12KE3HOSA1 Infineon-FZ400R12KE3-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433be115d71
FZ400R12KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 650A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9079.72 грн
В кошику  од. на суму  грн.
FZ400R12KP4HOSA1 Infineon-FZ400R12KP4-DS-v02_02-en_de.pdf?fileId=db3a304320896aa20120c8ca11e73293
FZ400R12KP4HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 400A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8392.33 грн
В кошику  од. на суму  грн.
FZ400R12KE3B1HOSA1 Infineon-FZ400R12KE3_B1-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b433c1965d75
FZ400R12KE3B1HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 650A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8729.60 грн
В кошику  од. на суму  грн.
FZ600R12KE4HOSA1 Infineon-FZ600R12KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb7bb4ece5939
FZ600R12KE4HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 3000W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.7 nF @ 25 V
на замовлення 46 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7676.04 грн
10+6210.57 грн
В кошику  од. на суму  грн.
FZ600R17KE3HOSA1 Infineon-FZ600R17KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b43044fb4fda
FZ600R17KE3HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 840A 3150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 840 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14064.04 грн
10+12502.71 грн
В кошику  од. на суму  грн.
FZ600R17KE4HOSA1 Infineon-FZ600R17KE4-DS-v02_02-en_de.pdf?fileId=db3a3043293a15c401294a1c37557de9
FZ600R17KE4HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1200A 3350W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3350 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 49 nF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9718.11 грн
10+8216.13 грн
В кошику  од. на суму  грн.
FZ600R12KS4HOSA1 Infineon-FZ600R12KS4-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b43370005cae
FZ600R12KS4HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 700A 3900W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 700 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12336.75 грн
В кошику  од. на суму  грн.
FZ600R65KE3NOSA1 Infineon-FZ600R65KE3-DS-v03_00-EN.pdf?fileId=db3a30432c64a60d012cbbecaa6f0356
FZ600R65KE3NOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 6500V 600A 2400W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -50°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 2400 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 160 nF @ 25 V
товару немає в наявності
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FZ600R17KE3S4HOSA1 Infineon-FZ600R17KE3_S4-DS-v03_00-en_de.pdf?fileId=db3a3043416e106e014173bd63163a3b
FZ600R17KE3S4HOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1200A 3150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 3150 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
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