Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126522) > Сторінка 580 з 2109
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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MB91F467DBPFVS-GS-N2K5E2 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLASH 208QFP DigiKey Programmable: Not Verified Number of I/O: 170 Part Status: Discontinued at Digi-Key Supplier Device Package: 208-QFP (28x28) Peripherals: DMA, LVD, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x10b Core Processor: FR60 RISC Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 72K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 96MHz Mounting Type: Surface Mount Package / Case: 208-BQFP Packaging: Tray |
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| MB91F467DBPFVS-GSK5E2 | Infineon Technologies |
Description: IC AUTO MCU 208HQFP DigiKey Programmable: Not Verified Number of I/O: 170 Part Status: Obsolete Supplier Device Package: 208-QFP (28x28) Peripherals: DMA, LVD, PWM, WDT Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x10b Core Processor: FR60 RISC Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 72K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 96MHz Mounting Type: Surface Mount Package / Case: 208-BQFP Packaging: Tray |
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В кошику од. на суму грн. | |||||||||||||||
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CY91F467DBPFVS-GS-UJE2 | Infineon Technologies |
Description: IC MCU 32B 1.0625MB FLASH 208QFP DigiKey Programmable: Not Verified Number of I/O: 170 Part Status: Obsolete Supplier Device Package: 208-QFP (28x28) Peripherals: DMA, LVD, PWM, WDT Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x10b Core Processor: FR60 RISC Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 72K x 8 Program Memory Size: 1.0625MB (1.0625M x 8) Speed: 96MHz Mounting Type: Surface Mount Package / Case: 208-BQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BGSX24MU16E6327XUSA1 | Infineon Technologies |
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1Packaging: Cut Tape (CT) Package / Case: 16-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: DP4T RF Type: GSM, LTE, W-CDMA Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.4V Insertion Loss: 1dB Frequency Range: 100MHz ~ 5GHz Test Frequency: 5GHz Isolation: 34dB Supplier Device Package: PG-ULGA-16-1 IIP3: 77dBm Part Status: Active |
на замовлення 4307 шт: термін постачання 21-31 дні (днів) |
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BGSX33M5U16E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH 3P3T 7.125GHZPart Status: Active Isolation: 33dB Test Frequency: 5.925GHz ~ 7.125GHz Frequency Range: 600MHz ~ 7.125GHz Insertion Loss: 1.02dB Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) RF Type: 5G, GSM, LTE, WCDMA Circuit: 3P3T Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||||||
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BGSX33M5U16E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH 3P3T 7.125GHZPart Status: Active Isolation: 33dB Test Frequency: 5.925GHz ~ 7.125GHz Frequency Range: 600MHz ~ 7.125GHz Insertion Loss: 1.02dB Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) RF Type: 5G, GSM, LTE, WCDMA Circuit: 3P3T Mounting Type: Surface Mount Packaging: Cut Tape (CT) |
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| PASCO2V01XUMA1 | Infineon Technologies |
Description: SENSOR CARBON DIOXIDE I2C OUTPUTPart Status: Discontinued at Digi-Key Current - Supply: 800µA, 6.1mA Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V Operating Temperature: 0°C ~ 50°C Type: Carbon Dioxide (CO2) Output: I2C, PWM, UART Packaging: Tape & Reel (TR) |
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S6J351CHTBSC20000 | Infineon Technologies |
Description: TRAVEO-40NMNumber of I/O: 94 Part Status: Active Supplier Device Package: 144-TEQFP (16x16) Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 40x12b Core Processor: Arm® Cortex®-R5F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 256K x 8 Speed: 132MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Tray Program Memory Size: 2.112M x 8 |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||||||||||||
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S6J3429HUBSV20000 | Infineon Technologies |
Description: TRAVEO-40NMPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 832KB (832K x 8) RAM Size: 92K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 112K x 8 Core Processor: Arm® Cortex®-R5F Data Converters: A/D 56x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 144 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
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S6J3429HVBSV20000 | Infineon Technologies |
Description: TRAVEO-40NMPackaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 832KB (832K x 8) RAM Size: 92K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 112K x 8 Core Processor: Arm® Cortex®-R5F Data Converters: A/D 56x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 144 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||||
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IPB180N03S4L01ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 180A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 140µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||||
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IPB180N03S4L01ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 180A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 140µA Supplier Device Package: PG-TO263-7-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||||
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IPP80N04S4L04AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO220-3-1Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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IPB80N04S204ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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IPB80N04S204ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6388 шт: термін постачання 21-31 дні (днів) |
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CY8C4128LQI-BL553 | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 56QFNPackaging: Tray Package / Case: 56-UFQFN Exposed Pad Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 5.5V Power - Output: 3dBm Protocol: Bluetooth v4.2 Current - Receiving: 16.4mA ~ 21.5mA Data Rate (Max): 8Mbps Current - Transmitting: 12.5mA ~ 20mA Supplier Device Package: 56-QFN (7x7) GPIO: 36 Modulation: GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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| MB89925PF-G-166-BNDE1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 80PQFP DigiKey Programmable: Not Verified Number of I/O: 69 Part Status: Obsolete Supplier Device Package: 80-QFP (14x20) Peripherals: LCD, LVD, POR, PWM, WDT Connectivity: Serial I/O, UART/USART Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: F²MC-8L Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 16KB (16K x 8) Speed: 8MHz Mounting Type: Surface Mount Package / Case: 80-BQFP Packaging: Tray |
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В кошику од. на суму грн. | |||||||||||||||
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CY8C21534B-24PVXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOPPackaging: Tape & Reel (TR) Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 24 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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CY7C1353G-100AXC | Infineon Technologies |
Description: IC SRAM 4.5MBIT PAR 100TQFPMemory Organization: 256K x 18 Access Time: 8 ns Memory Interface: Parallel Part Status: Active Supplier Device Package: 100-TQFP (14x20) Memory Format: SRAM Clock Frequency: 100 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 4.5Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||||
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CY7C1041CV33-10BAJXET | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 48FBGADigiKey Programmable: Not Verified Memory Organization: 256K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Part Status: Discontinued at Digi-Key Supplier Device Package: 48-FBGA (7x8.5) Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 48-TFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB39A136PFT-G-BND-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 24TSSOPNumber of Outputs: 2 Part Status: Obsolete Clock Sync: No Duty Cycle (Max): 80% Output Phases: 2 Control Features: Current Limit, Soft Start Synchronous Rectifier: Yes Supplier Device Package: 24-TSSOP Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Topology: Buck Frequency - Switching: 500kHz Output Configuration: Positive Operating Temperature: -30°C ~ 85°C (TA) Function: Step-Down Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 24-TFSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB39A136PFT-G-BND-ERE1 | Infineon Technologies |
Description: IC REG CTRLR BUCK 24TSSOPNumber of Outputs: 2 Part Status: Obsolete Clock Sync: No Duty Cycle (Max): 80% Output Phases: 2 Control Features: Current Limit, Soft Start Synchronous Rectifier: Yes Supplier Device Package: 24-TSSOP Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V Topology: Buck Frequency - Switching: 500kHz Output Configuration: Positive Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Output Type: Transistor Driver Package / Case: 24-TFSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Function: Step-Down |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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T590N16TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 1250A DO-200ABVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 1250 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 590 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | ||||||||||||||
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T640N16TOFXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 1250A DO-200ABVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 1250 A Part Status: Active Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 644 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AA, A-PUK Packaging: Tray |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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FS400R07A1E3S7BOMA1 | Infineon Technologies |
Description: IGBT MODULEVce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 400A Current - Collector (Ic) (Max): 500 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: AG-HYBRID1-1 NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Full Bridge Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Input Capacitance (Cies) @ Vce: 28 nF @ 25 V Current - Collector Cutoff (Max): 100 µA Power - Max: 1250 W Voltage - Collector Emitter Breakdown (Max): 705 V |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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FM25V02A-DGQTR | Infineon Technologies |
Description: IC FRAM 256KBIT SPI 40MHZ 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 40 MHz Memory Format: FRAM Supplier Device Package: 8-DFN (4x4.5) Part Status: Active Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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DD89N14KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1400V 89ASupplier Device Package: Module Current - Average Rectified (Io) (per Diode): 89A Diode Configuration: 1 Pair Common Cathode Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Current - Reverse Leakage @ Vr: 20 mA @ 1400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Voltage - DC Reverse (Vr) (Max): 1400 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| MB2198-111-E | Infineon Technologies |
Description: TOOL KIT Packaging: Bulk Part Status: Obsolete Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FS75R07U1E4BPSA1 | Infineon Technologies |
Description: IGBT MOD 650V 100A 275WInput Capacitance (Cies) @ Vce: 4.6 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 275 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 100 A Part Status: Not For New Designs IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A Operating Temperature: -40°C ~ 150°C Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD100N04S4L02ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL_30/40VPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 95µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IPD100N04S4L02ATMA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL_30/40VPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 95µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2066 шт: термін постачання 21-31 дні (днів) |
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PEB3265FV1.3 | Infineon Technologies |
Description: SLIC FILTERPackaging: Bulk Part Status: Active |
на замовлення 640 шт: термін постачання 21-31 дні (днів) |
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IRS2890DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-14-903 Rise / Fall Time (Typ): 85ns, 30ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 220mA, 480mA Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IRS2890DSTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-14-903 Rise / Fall Time (Typ): 85ns, 30ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 220mA, 480mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 716 шт: термін постачання 21-31 дні (днів) |
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IPP65R190C7FKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 13A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 4V @ 290µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R190CFDXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
на замовлення 384 шт: термін постачання 21-31 дні (днів) |
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IPW65R190CFDFKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO247-3-41 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
на замовлення 581 шт: термін постачання 21-31 дні (днів) |
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IPW65R190CFDFKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 730µA Supplier Device Package: PG-TO247-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP65R190CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 730µA Supplier Device Package: PG-TO220-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI65R190CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 730µA Supplier Device Package: PG-TO262-3 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPA65R190CFDXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 730µA Supplier Device Package: PG-TO220-3-111 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPI65R190CFDXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 17.5A TO262-3Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Power Dissipation (Max): 151W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 700µA Supplier Device Package: PG-TO262-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
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IFX90121ELV50XUMA1 | Infineon Technologies |
Description: IC REG BUCK 5V 500MA PGSSOP14Mounting Type: Surface Mount Output Type: Fixed Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Output (Min/Fixed): 5V Voltage - Input (Min): 4.75V Synchronous Rectifier: No Supplier Device Package: PG-SSOP-14-EP Topology: Buck Voltage - Input (Max): 45V Frequency - Switching: 2.2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 500mA Function: Step-Down Number of Outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY90F347DASPFV-GS-9011E1 | Infineon Technologies |
Description: IC MCU 16BIT 128KB FLASH 100LQFPDigiKey Programmable: Not Verified Number of I/O: 82 Part Status: Obsolete Supplier Device Package: 100-LQFP (14x14) Peripherals: DMA, POR, WDT Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Core Size: 16-Bit Data Converters: A/D 16x8/10b Core Processor: F²MC-16LX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 6K x 8 Program Memory Size: 128KB (128K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S2GO3DSENSETLV493DTOBO1 | Infineon Technologies |
Description: 3D MAGNETIC SENSORType: Sensor Function: Magnetic Hall Effect Packaging: Bulk Part Status: Active Platform: Shield2Go Utilized IC / Part: TLV493D-A1B6 Contents: Board(s) |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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JOYSTICKFOR3D2GOKITTOBO1 | Infineon Technologies |
Description: JOYSTICK FOR 3D 2 GO KITUtilized IC / Part: TLV493D-A1B6 Part Status: Active Accessory Type: Joystick For Use With/Related Products: TLV493D-A1B6 Packaging: Bulk |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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IPP200N15N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 50A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V |
на замовлення 2719 шт: термін постачання 21-31 дні (днів) |
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CY8C21223-24SXIT | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 16-SOIC Part Status: Active Number of I/O: 12 DigiKey Programmable: Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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CY8C21223-24SXIT | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 16-SOIC Part Status: Active Number of I/O: 12 DigiKey Programmable: Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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CY3250-21X23 | Infineon Technologies |
Description: KIT ICE POD FOR CY8C21X23 SSOP Packaging: Bulk For Use With/Related Products: CY3215-DK, CY8C21123-24SXI, CY8C21223-24SXI, CY8C21323-24PVXI Accessory Type: Non-QFN Emulation Kit Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CY3213-16SOIC | Infineon Technologies |
Description: KIT FLEX POD FOR CY8C21223 Part Status: Obsolete Accessory Type: Emulator Flex Pod Kit For Use With/Related Products: CY3215-DK, CY8C21223-24SXI |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AUIRFR2905ZTRL | Infineon Technologies |
Description: MOSFET N-CH 55V 42A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| MB89635PF-GT-1205-BNDE1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 64QFP Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: F²MC-8L Program Memory Type: Mask ROM Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 16KB (16K x 8) Speed: 10MHz Mounting Type: Surface Mount Package / Case: 64-BQFP Packaging: Tray DigiKey Programmable: Not Verified Number of I/O: 53 Part Status: Obsolete Supplier Device Package: 64-QFP (14x20) Peripherals: POR, PWM, WDT Connectivity: EBI/EMI, Serial I/O, UART/USART |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CY8C4024AXI-S402 | Infineon Technologies |
Description: IC MCU 32BIT 16KB FLASH 32TQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 32-TQFP (7x7) Part Status: Active Number of I/O: 27 DigiKey Programmable: Not Verified |
на замовлення 2326 шт: термін постачання 21-31 дні (днів) |
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IR38064MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 35A IQFN-34-900Packaging: Tape & Reel (TR) Package / Case: 34-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 35A Output Configuration: Positive Frequency - Switching: 400kHz ~ 1.5MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: PG-IQFN-34-900 Synchronous Rectifier: Yes Voltage - Output (Max): 18.06V Voltage - Input (Min): 1.2V Voltage - Output (Min/Fixed): 0.5V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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IR38064MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJ 35A IQFN-34-900Packaging: Cut Tape (CT) Package / Case: 34-PowerVFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 35A Output Configuration: Positive Frequency - Switching: 400kHz ~ 1.5MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: PG-IQFN-34-900 Synchronous Rectifier: Yes Voltage - Output (Max): 18.06V Voltage - Input (Min): 1.2V Voltage - Output (Min/Fixed): 0.5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4295GV50NTSA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 30MA SCT595-5 Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 5V Control Features: Power Fail Part Status: Obsolete PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4296GV33NTSA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 30MA PG-SCT595-5Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 170 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Inhibit Grade: Automotive Part Status: Not For New Designs PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4.5 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4296GV50NTSA1 | Infineon Technologies |
Description: IC REG LIN 5V 30MA PG-SCT595-5Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Gull Wing Output Type: Fixed Mounting Type: Surface Mount Current - Output: 30mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 170 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-SCT595-5 Voltage - Output (Min/Fixed): 5V Control Features: Inhibit Grade: Automotive Part Status: Not For New Designs PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.3V @ 20mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 5.2 mA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CY91F223SPFV-GS-UJE1 | Infineon Technologies |
Description: ICU MCU FLASH 144LQFP Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| MB91F467DBPFVS-GS-N2K5E2 |
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Discontinued at Digi-Key
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Discontinued at Digi-Key
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| MB91F467DBPFVS-GSK5E2 |
Виробник: Infineon Technologies
Description: IC AUTO MCU 208HQFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Description: IC AUTO MCU 208HQFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
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| CY91F467DBPFVS-GS-UJE2 |
Виробник: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
Description: IC MCU 32B 1.0625MB FLASH 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 170
Part Status: Obsolete
Supplier Device Package: 208-QFP (28x28)
Peripherals: DMA, LVD, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x10b
Core Processor: FR60 RISC
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 72K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 96MHz
Mounting Type: Surface Mount
Package / Case: 208-BQFP
Packaging: Tray
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| BGSX24MU16E6327XUSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
на замовлення 4307 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.95 грн |
| 10+ | 66.12 грн |
| 25+ | 62.35 грн |
| 100+ | 53.65 грн |
| 250+ | 50.73 грн |
| 500+ | 48.67 грн |
| 1000+ | 45.96 грн |
| BGSX33M5U16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4500 шт
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| BGSX33M5U16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Description: IC RF SWITCH 3P3T 7.125GHZ
Part Status: Active
Isolation: 33dB
Test Frequency: 5.925GHz ~ 7.125GHz
Frequency Range: 600MHz ~ 7.125GHz
Insertion Loss: 1.02dB
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
RF Type: 5G, GSM, LTE, WCDMA
Circuit: 3P3T
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
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| PASCO2V01XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Part Status: Discontinued at Digi-Key
Current - Supply: 800µA, 6.1mA
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 50°C
Type: Carbon Dioxide (CO2)
Output: I2C, PWM, UART
Packaging: Tape & Reel (TR)
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Part Status: Discontinued at Digi-Key
Current - Supply: 800µA, 6.1mA
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Operating Temperature: 0°C ~ 50°C
Type: Carbon Dioxide (CO2)
Output: I2C, PWM, UART
Packaging: Tape & Reel (TR)
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| S6J351CHTBSC20000 |
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Виробник: Infineon Technologies
Description: TRAVEO-40NM
Number of I/O: 94
Part Status: Active
Supplier Device Package: 144-TEQFP (16x16)
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 40x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Speed: 132MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tray
Program Memory Size: 2.112M x 8
Description: TRAVEO-40NM
Number of I/O: 94
Part Status: Active
Supplier Device Package: 144-TEQFP (16x16)
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 40x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Speed: 132MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tray
Program Memory Size: 2.112M x 8
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Мінімальне замовлення: 840 шт
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| S6J3429HUBSV20000 |
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Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
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Мінімальне замовлення: 600 шт
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| S6J3429HVBSV20000 |
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Виробник: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 832KB (832K x 8)
RAM Size: 92K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 56x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 144
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Мінімальне замовлення: 600 шт
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| IPB180N03S4L01ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IPB180N03S4L01ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| IPP80N04S4L04AKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
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Мінімальне замовлення: 500 шт
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| IPB80N04S204ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 107.52 грн |
| IPB80N04S204ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6388 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 300.98 грн |
| 10+ | 190.66 грн |
| 100+ | 134.62 грн |
| 500+ | 103.86 грн |
| CY8C4128LQI-BL553 |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 8kB ROM, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA ~ 21.5mA
Data Rate (Max): 8Mbps
Current - Transmitting: 12.5mA ~ 20mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 422.48 грн |
| 10+ | 314.37 грн |
| 25+ | 291.26 грн |
| 100+ | 249.45 грн |
| 260+ | 240.29 грн |
| MB89925PF-G-166-BNDE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 80PQFP
DigiKey Programmable: Not Verified
Number of I/O: 69
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 8MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
Description: IC MCU 8BIT 16KB MROM 80PQFP
DigiKey Programmable: Not Verified
Number of I/O: 69
Part Status: Obsolete
Supplier Device Package: 80-QFP (14x20)
Peripherals: LCD, LVD, POR, PWM, WDT
Connectivity: Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 8MHz
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Packaging: Tray
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| CY8C21534B-24PVXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 1000 шт
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| CY7C1353G-100AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PAR 100TQFP
Memory Organization: 256K x 18
Access Time: 8 ns
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 100 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 4.5Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 360 шт
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| CY7C1041CV33-10BAJXET |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Discontinued at Digi-Key
Supplier Device Package: 48-FBGA (7x8.5)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
Description: IC SRAM 4MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Part Status: Discontinued at Digi-Key
Supplier Device Package: 48-FBGA (7x8.5)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Packaging: Tape & Reel (TR)
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| MB39A136PFT-G-BND-ERE1 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Function: Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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| MB39A136PFT-G-BND-ERE1 |
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Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Function: Step-Down
Description: IC REG CTRLR BUCK 24TSSOP
Number of Outputs: 2
Part Status: Obsolete
Clock Sync: No
Duty Cycle (Max): 80%
Output Phases: 2
Control Features: Current Limit, Soft Start
Synchronous Rectifier: Yes
Supplier Device Package: 24-TSSOP
Voltage - Supply (Vcc/Vdd): 4.5V ~ 25V
Topology: Buck
Frequency - Switching: 500kHz
Output Configuration: Positive
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 24-TFSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Function: Step-Down
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| T590N16TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 590 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 590 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
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Мінімальне замовлення: 6 шт
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| T640N16TOFXPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 644 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
Description: SCR MODULE 1.8KV 1250A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 1250 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 644 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 9400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9126.74 грн |
| FS400R07A1E3S7BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 400A
Current - Collector (Ic) (Max): 500 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRID1-1
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 705 V
Description: IGBT MODULE
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 400A
Current - Collector (Ic) (Max): 500 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-HYBRID1-1
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
Current - Collector Cutoff (Max): 100 µA
Power - Max: 1250 W
Voltage - Collector Emitter Breakdown (Max): 705 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 21993.84 грн |
| FM25V02A-DGQTR |
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Виробник: Infineon Technologies
Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 256KBIT SPI 40MHZ 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 40 MHz
Memory Format: FRAM
Supplier Device Package: 8-DFN (4x4.5)
Part Status: Active
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 3000 шт
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| DD89N14KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 1400V 89A
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 89A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Description: DIODE MODULE GP 1400V 89A
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 89A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8108.56 грн |
| MB2198-111-E |
Виробник: Infineon Technologies
Description: TOOL KIT
Packaging: Bulk
Part Status: Obsolete
Supplied Contents: Board(s)
Description: TOOL KIT
Packaging: Bulk
Part Status: Obsolete
Supplied Contents: Board(s)
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| FS75R07U1E4BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 650V 100A 275W
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 275 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: IGBT MOD 650V 100A 275W
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 275 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| IPD100N04S4L02ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL_30/40V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 2500 шт
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| IPD100N04S4L02ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL_30/40V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2066 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.28 грн |
| 10+ | 111.48 грн |
| 50+ | 84.79 грн |
| 100+ | 71.48 грн |
| 500+ | 57.30 грн |
| PEB3265FV1.3 |
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на замовлення 640 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 369.78 грн |
| IRS2890DSTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2890DSTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14-903
Rise / Fall Time (Typ): 85ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 220mA, 480mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 716 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.65 грн |
| 10+ | 79.78 грн |
| 25+ | 72.43 грн |
| 100+ | 60.44 грн |
| 250+ | 56.83 грн |
| 500+ | 54.66 грн |
| IPP65R190C7FKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Description: MOSFET N-CH 650V 13A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| IPP65R190CFDXKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 277.47 грн |
| 50+ | 135.51 грн |
| 100+ | 122.73 грн |
| IPW65R190CFDFKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 322.93 грн |
| 30+ | 172.29 грн |
| 120+ | 141.66 грн |
| 510+ | 111.85 грн |
| IPW65R190CFDFKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO247-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R190CFDXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO220-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
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В кошику
од. на суму грн.
| IPI65R190CFDXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO262-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
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В кошику
од. на суму грн.
| IPA65R190CFDXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 730µA
Supplier Device Package: PG-TO220-3-111
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
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В кошику
од. на суму грн.
| IPI65R190CFDXKSA2 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 17.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Description: MOSFET N-CH 650V 17.5A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 700µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| IFX90121ELV50XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG BUCK 5V 500MA PGSSOP14
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-SSOP-14-EP
Topology: Buck
Voltage - Input (Max): 45V
Frequency - Switching: 2.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 500mA
Function: Step-Down
Number of Outputs: 1
Description: IC REG BUCK 5V 500MA PGSSOP14
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Voltage - Input (Min): 4.75V
Synchronous Rectifier: No
Supplier Device Package: PG-SSOP-14-EP
Topology: Buck
Voltage - Input (Max): 45V
Frequency - Switching: 2.2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 500mA
Function: Step-Down
Number of Outputs: 1
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| CY90F347DASPFV-GS-9011E1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 82
Part Status: Obsolete
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC MCU 16BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 82
Part Status: Obsolete
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 6K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
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| S2GO3DSENSETLV493DTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: 3D MAGNETIC SENSOR
Type: Sensor
Function: Magnetic Hall Effect
Packaging: Bulk
Part Status: Active
Platform: Shield2Go
Utilized IC / Part: TLV493D-A1B6
Contents: Board(s)
Description: 3D MAGNETIC SENSOR
Type: Sensor
Function: Magnetic Hall Effect
Packaging: Bulk
Part Status: Active
Platform: Shield2Go
Utilized IC / Part: TLV493D-A1B6
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1000.15 грн |
| JOYSTICKFOR3D2GOKITTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: JOYSTICK FOR 3D 2 GO KIT
Utilized IC / Part: TLV493D-A1B6
Part Status: Active
Accessory Type: Joystick
For Use With/Related Products: TLV493D-A1B6
Packaging: Bulk
Description: JOYSTICK FOR 3D 2 GO KIT
Utilized IC / Part: TLV493D-A1B6
Part Status: Active
Accessory Type: Joystick
For Use With/Related Products: TLV493D-A1B6
Packaging: Bulk
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1983.05 грн |
| IPP200N15N3GXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
Description: MOSFET N-CH 150V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
на замовлення 2719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 260.23 грн |
| 10+ | 164.01 грн |
| 50+ | 126.53 грн |
| 100+ | 107.42 грн |
| 500+ | 87.56 грн |
| CY8C21223-24SXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 148.66 грн |
| CY8C21223-24SXIT |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
Description: IC MCU 8BIT 4KB FLASH 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 16-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.77 грн |
| 10+ | 198.58 грн |
| 25+ | 182.66 грн |
| 100+ | 154.94 грн |
| 250+ | 147.09 грн |
| 500+ | 142.36 грн |
| 1000+ | 136.19 грн |
| CY3250-21X23 |
Виробник: Infineon Technologies
Description: KIT ICE POD FOR CY8C21X23 SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI, CY8C21223-24SXI, CY8C21323-24PVXI
Accessory Type: Non-QFN Emulation Kit
Part Status: Obsolete
Description: KIT ICE POD FOR CY8C21X23 SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21123-24SXI, CY8C21223-24SXI, CY8C21323-24PVXI
Accessory Type: Non-QFN Emulation Kit
Part Status: Obsolete
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| CY3213-16SOIC |
Виробник: Infineon Technologies
Description: KIT FLEX POD FOR CY8C21223
Part Status: Obsolete
Accessory Type: Emulator Flex Pod Kit
For Use With/Related Products: CY3215-DK, CY8C21223-24SXI
Description: KIT FLEX POD FOR CY8C21223
Part Status: Obsolete
Accessory Type: Emulator Flex Pod Kit
For Use With/Related Products: CY3215-DK, CY8C21223-24SXI
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| AUIRFR2905ZTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
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| MB89635PF-GT-1205-BNDE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 53
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, Serial I/O, UART/USART
Description: IC MCU 8BIT 16KB MROM 64QFP
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: F²MC-8L
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 16KB (16K x 8)
Speed: 10MHz
Mounting Type: Surface Mount
Package / Case: 64-BQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 53
Part Status: Obsolete
Supplier Device Package: 64-QFP (14x20)
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, Serial I/O, UART/USART
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| CY8C4024AXI-S402 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 32-TQFP (7x7)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
на замовлення 2326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 141.09 грн |
| 10+ | 100.46 грн |
| 25+ | 91.63 грн |
| 100+ | 76.84 грн |
| 250+ | 72.48 грн |
| 500+ | 69.85 грн |
| 1000+ | 66.57 грн |
| IR38064MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 35A IQFN-34-900
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 35A
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Description: IC REG BUCK ADJ 35A IQFN-34-900
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 35A
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
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Мінімальне замовлення: 4000 шт
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| IR38064MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 35A IQFN-34-900
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 35A
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
Description: IC REG BUCK ADJ 35A IQFN-34-900
Packaging: Cut Tape (CT)
Package / Case: 34-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 35A
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PG-IQFN-34-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Active
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| TLE4295GV50NTSA1 |
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 30MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Power Fail
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Description: IC REG LINEAR 5V 30MA SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Power Fail
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
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| TLE4296GV33NTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Grade: Automotive
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4.5 mA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 30MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Inhibit
Grade: Automotive
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4.5 mA
Qualification: AEC-Q100
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| TLE4296GV50NTSA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 30MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 30MA PG-SCT595-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 30mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SCT595-5
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Grade: Automotive
Part Status: Not For New Designs
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 20mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 5.2 mA
Qualification: AEC-Q100
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| CY91F223SPFV-GS-UJE1 |
Виробник: Infineon Technologies
Description: ICU MCU FLASH 144LQFP
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: ICU MCU FLASH 144LQFP
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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