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BC847CWH6433XTMA1 BC847CWH6433XTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC 847CW B6327 BC 847CW B6327 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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IRS2110PBF IRS2110PBF Infineon Technologies irs2110.pdf?fileId=5546d462533600a40153567660ff27b0 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
на замовлення 1444 шт:
термін постачання 21-31 дні (днів)
2+321.73 грн
10+234.83 грн
25+216.11 грн
100+183.55 грн
250+174.36 грн
500+168.83 грн
1000+161.58 грн
Мінімальне замовлення: 2
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CY8C21334-24PVXI CY8C21334-24PVXI Infineon Technologies Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a description Description: IC MCU 8BIT 8KB FLASH 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
82+301.84 грн
Мінімальне замовлення: 82
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IRGS14C40LPBF IRGS14C40LPBF Infineon Technologies IRG%28S%2CSL%2CB%2914C40LPbF.pdf description Description: IGBT 430V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
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CY8C24423A-24LTXIT CY8C24423A-24LTXIT Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+251.01 грн
Мінімальне замовлення: 2500
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CY8C20434-12LQXI CY8C20434-12LQXI Infineon Technologies Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
2+316.59 грн
10+231.21 грн
25+212.78 грн
100+180.66 грн
Мінімальне замовлення: 2
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CY8C23533-24LQXIT CY8C23533-24LQXIT Infineon Technologies Infineon-CY8C23533-24LQXI-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6c7463d3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
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CY8C21434-24LKXI CY8C21434-24LKXI Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C21434-24LKXIT CY8C21434-24LKXIT Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8CTMG100-32LKXI CY8CTMG100-32LKXI Infineon Technologies CY8CTMG100.pdf Description: IC TRUETOUCH CAPSENSE 32-QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
на замовлення 3945 шт:
термін постачання 21-31 дні (днів)
59+438.95 грн
Мінімальне замовлення: 59
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IGI60F2020A1LAUMA1 IGI60F2020A1LAUMA1 Infineon Technologies Infineon-IGI60F2020A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb34701867989404278c5 Description: IC HALF BRIDGE DRIVER 5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 200mOhm LS, 200mOhm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 14.1A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
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IGI60F200A1LAUMA1 IGI60F200A1LAUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
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IRG4PC40FPBF IRG4PC40FPBF Infineon Technologies irg4pc40fpbf.pdf?fileId=5546d462533600a4015356440a0b22d4 Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 160 W
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T501N70TOHXPSA1 T501N70TOHXPSA1 Infineon Technologies Infineon-T501N-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b4304de2500a Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+75480.49 грн
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CYDC1543-GC Infineon Technologies Description: DEVELOPMENT KIT
Packaging: Bulk
Contents: Board(s)
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CY7C64215-56LTXIT CY7C64215-56LTXIT Infineon Technologies Infineon-CY7C64215_enCoRe_III_Full-Speed_USB_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbcf87457f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: MCU ENCORE 16K FLASH 56MHZ 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
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IDP2309XUMA1 IDP2309XUMA1 Infineon Technologies Description: XDP SMPS TV/PC
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+117.83 грн
Мінімальне замовлення: 2500
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IDP2309XUMA1 IDP2309XUMA1 Infineon Technologies Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+242.15 грн
10+195.69 грн
100+158.33 грн
500+132.07 грн
1000+113.08 грн
Мінімальне замовлення: 2
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CYPD2134A-24LQXQ CYPD2134A-24LQXQ Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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CYPD2134A-24LQXQT CYPD2134A-24LQXQT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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CYPDC1185B2-32LQXQ CYPDC1185B2-32LQXQ Infineon Technologies Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37 Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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CYPDC1185B2-32LQXQT CYPDC1185B2-32LQXQT Infineon Technologies Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37 Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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IRFR18N15DPBF IRFR18N15DPBF Infineon Technologies irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069 description Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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TLF35585QVS01XUMA1 TLF35585QVS01XUMA1 Infineon Technologies Infineon-TLF35585QVS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb0c65057 Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QVS02XUMA1 TLF35585QVS02XUMA1 Infineon Technologies Infineon-TLF35585QVS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054 Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
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TLF35585QUS01XUMA1 TLF35585QUS01XUMA1 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QUS02XUMA1 TLF35585QUS02XUMA1 Infineon Technologies Infineon-TLF35585QUS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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SFH756 Infineon Technologies SFH756_756V.pdf Description: XMITTER FIBER OPTIC 660NM
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
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IRF1010EPBF IRF1010EPBF Infineon Technologies irf1010epbf.pdf?fileId=5546d462533600a4015355da5fa41883 description Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1892 шт:
термін постачання 21-31 дні (днів)
3+148.03 грн
50+69.02 грн
100+61.84 грн
500+46.20 грн
1000+42.40 грн
Мінімальне замовлення: 3
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IRFR4105ZPBF IRFR4105ZPBF Infineon Technologies irfr4105zpbf.pdf?fileId=5546d462533600a4015356321faf20ee description Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRGP4063D1-EPBF IRGP4063D1-EPBF Infineon Technologies IRGP4063D1%28-E%29PBF.pdf Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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IRGP4063D1PBF IRGP4063D1PBF Infineon Technologies IRGP4063D1%28-E%29PBF.pdf Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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IRGP4063D-EPBF IRGP4063D-EPBF Infineon Technologies IRGP4063D%28-E%29PbF.pdf Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
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IRGP4062D-EPBF IRGP4062D-EPBF Infineon Technologies IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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ESD121B1W0201E6327XTSA1 ESD121B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175 Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
товару немає в наявності
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ESD121B1W0201E6327XTSA1 ESD121B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175 Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
на замовлення 8510 шт:
термін постачання 21-31 дні (днів)
31+11.12 грн
46+7.17 грн
100+3.35 грн
500+2.89 грн
1000+2.36 грн
2000+2.33 грн
5000+2.26 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
OC2321VQFN8XTMA2 Infineon Technologies Description: OC23VQESINDUSTRY
Packaging: Bulk
товару немає в наявності
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BGT80E6327XTMA1 BGT80E6327XTMA1 Infineon Technologies Description: BACKHAUL TRANSCEICER
Packaging: Bulk
на замовлення 5175 шт:
термін постачання 21-31 дні (днів)
5+6006.75 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BGT80E6327XTSA1 BGT80E6327XTSA1 Infineon Technologies BGT70_BGT80-70_80GHz_Radar_PB.pdf?fileId=db3a30433de4e67f013df36d4ad467b1 Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
на замовлення 9474 шт:
термін постачання 21-31 дні (днів)
5+5750.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CY3202-C Infineon Technologies PSoC Dev. Tools Selector Guide.pdf Description: PSOC C-COMPILER FOR CY8C25/8C26
Type: Compiler
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IKY150N65EH7XKSA1 IKY150N65EH7XKSA1 Infineon Technologies Infineon-IKY150N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701892507ba8f202d Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
1+926.79 грн
30+539.15 грн
120+461.72 грн
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IRGP30B120KD-EP IRGP30B120KD-EP Infineon Technologies irgp30b120kd-epbf.pdf?fileId=5546d462533600a401535655acdb2440 Description: IGBT NPT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товару немає в наявності
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SAK-XC2263N40F40LAAKXUMA1 SAK-XC2263N40F40LAAKXUMA1 Infineon Technologies Infineon-XC223XN-DS-v01_06-en.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAF-XE164HM-72F80LAA SAF-XE164HM-72F80LAA Infineon Technologies INFNS15545-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRGP50B60PD1PBF IRGP50B60PD1PBF Infineon Technologies irgp50b60pd1pbf.pdf?fileId=5546d462533600a401535656c5e9248a Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
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IRGP50B60PDPBF IRGP50B60PDPBF Infineon Technologies irgp50b60pdpbf.pdf?fileId=5546d462533600a401535656ce5f248c Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
товару немає в наявності
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AUIRGP50B60PD1 AUIRGP50B60PD1 Infineon Technologies AUIRGP50B60PD1%28E%29.pdf Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 Infineon Technologies Infineon-IKQ50N120CT2-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015c0be00a1b0a7a Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
1+742.71 грн
30+423.47 грн
120+359.40 грн
510+309.48 грн
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 IPD65R1K4C6ATMA1 Infineon Technologies Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+22.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 IPD65R1K4C6ATMA1 Infineon Technologies Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 12335 шт:
термін постачання 21-31 дні (днів)
4+100.11 грн
10+61.14 грн
100+40.50 грн
500+29.69 грн
1000+27.01 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD65R420CFDAATMA1 IPD65R420CFDAATMA1 Infineon Technologies Infineon-IPD65R420CFDA-DS-v02_01-EN.pdf?fileId=db3a30433ea3aef6013eac59c2420dff Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1919 шт:
термін постачання 21-31 дні (днів)
2+195.95 грн
10+121.54 грн
100+83.39 грн
500+63.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD65R1K0CEAUMA1 IPD65R1K0CEAUMA1 Infineon Technologies Infineon-IPD65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015385336909754c Description: MOSFET N-CH 650V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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IPD65R1K4CFDATMA1 IPD65R1K4CFDATMA1 Infineon Technologies Infineon-IPD65R1K4CFD-DS-v02_01-en.pdf?fileId=db3a304338ec6d3901390056583f48f4 Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 Infineon Technologies Infineon-IPD65R660CFD-DataSheet-v02_07-EN.pdf?fileId=db3a30433efacd9a013f0a34774b30ac Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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IPD65R420CFDATMA1 IPD65R420CFDATMA1 Infineon Technologies Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997 Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2526 шт:
термін постачання 21-31 дні (днів)
249+88.76 грн
Мінімальне замовлення: 249
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TT425N12KOFHPSA2 TT425N12KOFHPSA2 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.2 kV
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FM22L16-55-TGTR FM22L16-55-TGTR Infineon Technologies Infineon-FM22L16_4_MBIT_(256K_X_16)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec87dbd40fc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+2652.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY9AF312LPMC1-G-MJE1 CY9AF312LPMC1-G-MJE1 Infineon Technologies Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+621.21 грн
10+463.98 грн
25+430.44 грн
160+360.41 грн
320+349.15 грн
640+339.88 грн
1120+328.14 грн
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BC847CWH6433XTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC847CWH6433XTMA1
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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BC 847CW B6327 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847CW B6327
Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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IRS2110PBF description irs2110.pdf?fileId=5546d462533600a40153567660ff27b0
IRS2110PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
на замовлення 1444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+321.73 грн
10+234.83 грн
25+216.11 грн
100+183.55 грн
250+174.36 грн
500+168.83 грн
1000+161.58 грн
Мінімальне замовлення: 2
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CY8C21334-24PVXI description Infineon-CY8C21634_CY8C21534_CY8C21434_CY8C21334_CY8C21234_PSoC_Programmable_System-on-Chip-DataSheet-v36_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd82ef47ed&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_a
CY8C21334-24PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
82+301.84 грн
Мінімальне замовлення: 82
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IRGS14C40LPBF description IRG%28S%2CSL%2CB%2914C40LPbF.pdf
IRGS14C40LPBF
Виробник: Infineon Technologies
Description: IGBT 430V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
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CY8C24423A-24LTXIT Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24423A-24LTXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+251.01 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
CY8C20434-12LQXI Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY8C20434-12LQXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+316.59 грн
10+231.21 грн
25+212.78 грн
100+180.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C23533-24LQXIT Infineon-CY8C23533-24LQXI-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6c7463d3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C23533-24LQXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
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CY8C21434-24LKXI
CY8C21434-24LKXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C21434-24LKXIT
CY8C21434-24LKXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8CTMG100-32LKXI CY8CTMG100.pdf
CY8CTMG100-32LKXI
Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 32-QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
на замовлення 3945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
59+438.95 грн
Мінімальне замовлення: 59
В кошику  од. на суму  грн.
IGI60F2020A1LAUMA1 Infineon-IGI60F2020A1L-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c85ecb34701867989404278c5
IGI60F2020A1LAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 200mOhm LS, 200mOhm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 14.1A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
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IGI60F200A1LAUMA1
IGI60F200A1LAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
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IRG4PC40FPBF irg4pc40fpbf.pdf?fileId=5546d462533600a4015356440a0b22d4
IRG4PC40FPBF
Виробник: Infineon Technologies
Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 160 W
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T501N70TOHXPSA1 Infineon-T501N-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b4304de2500a
T501N70TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+75480.49 грн
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CYDC1543-GC
Виробник: Infineon Technologies
Description: DEVELOPMENT KIT
Packaging: Bulk
Contents: Board(s)
товару немає в наявності
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CY7C64215-56LTXIT Infineon-CY7C64215_enCoRe_III_Full-Speed_USB_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecbcf87457f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C64215-56LTXIT
Виробник: Infineon Technologies
Description: MCU ENCORE 16K FLASH 56MHZ 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
товару немає в наявності
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IDP2309XUMA1
IDP2309XUMA1
Виробник: Infineon Technologies
Description: XDP SMPS TV/PC
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+117.83 грн
Мінімальне замовлення: 2500
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IDP2309XUMA1
IDP2309XUMA1
Виробник: Infineon Technologies
Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.15 грн
10+195.69 грн
100+158.33 грн
500+132.07 грн
1000+113.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CYPD2134A-24LQXQ Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b
CYPD2134A-24LQXQ
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
товару немає в наявності
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CYPD2134A-24LQXQT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b
CYPD2134A-24LQXQT
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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CYPDC1185B2-32LQXQ Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37
CYPDC1185B2-32LQXQ
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
товару немає в наявності
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CYPDC1185B2-32LQXQT Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37
CYPDC1185B2-32LQXQT
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
товару немає в наявності
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IRFR18N15DPBF description irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069
IRFR18N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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TLF35585QVS01XUMA1 Infineon-TLF35585QVS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb0c65057
TLF35585QVS01XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLF35585QVS02XUMA1 Infineon-TLF35585QVS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054
TLF35585QVS02XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2465 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLF35585QUS01XUMA1 Infineon-TLF35585QUS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLF35585QUS02XUMA1 Infineon-TLF35585QUS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a
TLF35585QUS02XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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SFH756 SFH756_756V.pdf
Виробник: Infineon Technologies
Description: XMITTER FIBER OPTIC 660NM
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
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IRF1010EPBF description irf1010epbf.pdf?fileId=5546d462533600a4015355da5fa41883
IRF1010EPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1892 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.03 грн
50+69.02 грн
100+61.84 грн
500+46.20 грн
1000+42.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR4105ZPBF description irfr4105zpbf.pdf?fileId=5546d462533600a4015356321faf20ee
IRFR4105ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRGP4063D1-EPBF IRGP4063D1%28-E%29PBF.pdf
IRGP4063D1-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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IRGP4063D1PBF IRGP4063D1%28-E%29PBF.pdf
IRGP4063D1PBF
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
товару немає в наявності
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IRGP4063D-EPBF IRGP4063D%28-E%29PbF.pdf
IRGP4063D-EPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
товару немає в наявності
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IRGP4062D-EPBF IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf
IRGP4062D-EPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
товару немає в наявності
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ESD121B1W0201E6327XTSA1 Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175
ESD121B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
товару немає в наявності
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ESD121B1W0201E6327XTSA1 Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175
ESD121B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
на замовлення 8510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+11.12 грн
46+7.17 грн
100+3.35 грн
500+2.89 грн
1000+2.36 грн
2000+2.33 грн
5000+2.26 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
OC2321VQFN8XTMA2
Виробник: Infineon Technologies
Description: OC23VQESINDUSTRY
Packaging: Bulk
товару немає в наявності
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BGT80E6327XTMA1
BGT80E6327XTMA1
Виробник: Infineon Technologies
Description: BACKHAUL TRANSCEICER
Packaging: Bulk
на замовлення 5175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+6006.75 грн
Мінімальне замовлення: 5
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BGT80E6327XTSA1 BGT70_BGT80-70_80GHz_Radar_PB.pdf?fileId=db3a30433de4e67f013df36d4ad467b1
BGT80E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
на замовлення 9474 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+5750.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CY3202-C PSoC Dev. Tools Selector Guide.pdf
Виробник: Infineon Technologies
Description: PSOC C-COMPILER FOR CY8C25/8C26
Type: Compiler
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IKY150N65EH7XKSA1 Infineon-IKY150N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701892507ba8f202d
IKY150N65EH7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+926.79 грн
30+539.15 грн
120+461.72 грн
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IRGP30B120KD-EP irgp30b120kd-epbf.pdf?fileId=5546d462533600a401535655acdb2440
IRGP30B120KD-EP
Виробник: Infineon Technologies
Description: IGBT NPT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товару немає в наявності
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SAK-XC2263N40F40LAAKXUMA1 Infineon-XC223XN-DS-v01_06-en.pdf?t.download=true&u=5oefqw
SAK-XC2263N40F40LAAKXUMA1
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAF-XE164HM-72F80LAA INFNS15545-1.pdf?t.download=true&u=5oefqw
SAF-XE164HM-72F80LAA
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRGP50B60PD1PBF irgp50b60pd1pbf.pdf?fileId=5546d462533600a401535656c5e9248a
IRGP50B60PD1PBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
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IRGP50B60PDPBF irgp50b60pdpbf.pdf?fileId=5546d462533600a401535656ce5f248c
IRGP50B60PDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
товару немає в наявності
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AUIRGP50B60PD1 AUIRGP50B60PD1%28E%29.pdf
AUIRGP50B60PD1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
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IKQ50N120CT2XKSA1 Infineon-IKQ50N120CT2-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015c0be00a1b0a7a
IKQ50N120CT2XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+742.71 грн
30+423.47 грн
120+359.40 грн
510+309.48 грн
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d
IPD65R1K4C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+22.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d
IPD65R1K4C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 12335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.11 грн
10+61.14 грн
100+40.50 грн
500+29.69 грн
1000+27.01 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD65R420CFDAATMA1 Infineon-IPD65R420CFDA-DS-v02_01-EN.pdf?fileId=db3a30433ea3aef6013eac59c2420dff
IPD65R420CFDAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+195.95 грн
10+121.54 грн
100+83.39 грн
500+63.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD65R1K0CEAUMA1 Infineon-IPD65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015385336909754c
IPD65R1K0CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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IPD65R1K4CFDATMA1 Infineon-IPD65R1K4CFD-DS-v02_01-en.pdf?fileId=db3a304338ec6d3901390056583f48f4
IPD65R1K4CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
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IPD65R660CFDATMA1 Infineon-IPD65R660CFD-DataSheet-v02_07-EN.pdf?fileId=db3a30433efacd9a013f0a34774b30ac
IPD65R660CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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IPD65R420CFDATMA1 Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997
IPD65R420CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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IPD65R420CFDBTMA1 IPx65R420CFD.pdf
IPD65R420CFDBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
249+88.76 грн
Мінімальне замовлення: 249
В кошику  од. на суму  грн.
TT425N12KOFHPSA2 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TT425N12KOFHPSA2
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.2 kV
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FM22L16-55-TGTR Infineon-FM22L16_4_MBIT_(256K_X_16)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec87dbd40fc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM22L16-55-TGTR
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+2652.36 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY9AF312LPMC1-G-MJE1 Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf
CY9AF312LPMC1-G-MJE1
Виробник: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+621.21 грн
10+463.98 грн
25+430.44 грн
160+360.41 грн
320+349.15 грн
640+339.88 грн
1120+328.14 грн
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