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BCR523UE6433HTMA1 BCR523UE6433HTMA1 Infineon Technologies bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Description: TRANS 2NPN PREBIAS 0.33W SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
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IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
товару немає в наявності
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IPT017N12NM6ATMA1 IPT017N12NM6ATMA1 Infineon Technologies Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
1+454.80 грн
10+293.24 грн
100+240.71 грн
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IPTC017N12NM6ATMA1 IPTC017N12NM6ATMA1 Infineon Technologies Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
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IPTC017N12NM6ATMA1 IPTC017N12NM6ATMA1 Infineon Technologies Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 1732 шт:
термін постачання 21-31 дні (днів)
1+566.69 грн
10+386.49 грн
100+301.52 грн
В кошику  од. на суму  грн.
IR4311MTRPBF IR4311MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 35W PQFN22
Packaging: Tape & Reel (TR)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
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IR4311MTRPBF IR4311MTRPBF Infineon Technologies ir4301.pdf?fileId=5546d462533600a4015355d5fc691819 Description: IC AMP CLASS D MONO 35W PQFN22
Packaging: Cut Tape (CT)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
2+280.93 грн
10+204.17 грн
25+187.43 грн
100+158.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399BN-12VXIT CY7C1399BN-12VXIT Infineon Technologies Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399BN-12VXIT CY7C1399BN-12VXIT Infineon Technologies Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
2+209.29 грн
10+188.51 грн
25+183.00 грн
50+167.81 грн
100+163.87 грн
250+158.68 грн
500+152.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399B-12VC CY7C1399B-12VC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-12ZC CY7C1399B-12ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3219 шт:
термін постачання 21-31 дні (днів)
333+67.83 грн
Мінімальне замовлення: 333
В кошику  од. на суму  грн.
CY7C1399B-12ZC CY7C1399B-12ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-15ZC CY7C1399B-15ZC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-12VXC CY7C1399B-12VXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
CY7C1399B-15VXC CY7C1399B-15VXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-12ZXC CY7C1399B-12ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-15ZXC CY7C1399B-15ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
226+107.06 грн
Мінімальне замовлення: 226
В кошику  од. на суму  грн.
CY7C1399B-15ZXC CY7C1399B-15ZXC Infineon Technologies CY7C1399B%20RevD.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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IDW30G120C5BFKSA1 IDW30G120C5BFKSA1 Infineon Technologies Infineon-20140610_IDW30G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146956f595b6a6b Description: DIODE ARR SIC 1200V 44A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 44A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
на замовлення 1147 шт:
термін постачання 21-31 дні (днів)
1+796.91 грн
30+478.06 грн
В кошику  од. на суму  грн.
KPY57-RK Infineon Technologies INFNS03494-1.pdf?t.download=true&u=5oefqw Description: SENSOR 870.2PSI 0.2" .2V TO8-5
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 200 mV
Operating Pressure: 870.2PSI (6000kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 1450.38PSI (10000kPa)
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
10+2517.91 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IGO60R070D1AUMA2 IGO60R070D1AUMA2 Infineon Technologies Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
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IGO60R070D1AUMA2 IGO60R070D1AUMA2 Infineon Technologies Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514 Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
1+1025.52 грн
10+692.90 грн
100+526.57 грн
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CYW55572MIFFBG Infineon Technologies Description: RF TXRX MODULE WIFI
Packaging: Tray
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IRSM836-084MATR IRSM836-084MATR Infineon Technologies irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+298.41 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRSM836-084MATR IRSM836-084MATR Infineon Technologies irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
1+559.45 грн
10+416.02 грн
25+385.22 грн
100+329.80 грн
250+314.67 грн
500+305.56 грн
1000+293.17 грн
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SIGC12T60SNCX1SA3 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX7SA2 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX7SA2 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA5 SIGC12T60NCX1SA5 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA4 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA3 Infineon Technologies SIGC12T60NC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX1SA2 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX1SA4 Infineon Technologies SIGC12T60SNC_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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XC836MT2FRAABKXUMA1 XC836MT2FRAABKXUMA1 Infineon Technologies Infineon-XC835_XC836-DS-v01_04-cn.pdf?fileId=db3a30432ba3fa6f012baa1500492fd3 Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 23
DigiKey Programmable: Not Verified
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CY8CKIT-009A CY8CKIT-009A Infineon Technologies CY8C38_PSoC-3_RevQ.pdf Description: CY8C38/CY8CKIT-001(A) EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: 8051
Utilized IC / Part: CY8C38, CY8CKIT-001(A)
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
1+842.79 грн
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F3L8MR12W2M1HB11BPSA1 F3L8MR12W2M1HB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+17460.32 грн
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CY8C5688AXI-LP099 CY8C5688AXI-LP099 Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
1+1736.29 грн
10+1350.30 грн
90+1276.27 грн
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CYAT81658-100AS48T CYAT81658-100AS48T Infineon Technologies PdfFile984121.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+593.62 грн
Мінімальне замовлення: 1500
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CYAT81658-100AS48T CYAT81658-100AS48T Infineon Technologies PdfFile984121.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+1040.81 грн
10+790.88 грн
25+737.97 грн
100+638.03 грн
250+612.04 грн
500+596.37 грн
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CYPD3173-24LQXQ CYPD3173-24LQXQ Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
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CYPD3173-24LQXQT CYPD3173-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
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CYPD3173P-24LQXQ CYPD3173P-24LQXQ Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
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CYPD3135-40LQXQ CYPD3135-40LQXQ Infineon Technologies Infineon-EZ-PD_CCG3_USB_Type-C_Controller_with_Power_Delivery-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed8b45c5a56 Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
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CYPD3120-40LQXIT CYPD3120-40LQXIT Infineon Technologies download Description: CCG3
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
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CYPD3123-40LQXI CYPD3123-40LQXI Infineon Technologies download Description: CCG3
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
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IRMCK341TY IRMCK341TY Infineon Technologies irmck341.pdf?fileId=5546d462533600a401535672ce66275e Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
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IPA60R210CFD7XKSA1 IPA60R210CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: LOW POWER_NEW
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+196.41 грн
50+92.24 грн
100+85.43 грн
500+70.01 грн
Мінімальне замовлення: 2
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IPA60R060C7XKSA1 IPA60R060C7XKSA1 Infineon Technologies Infineon-IPA60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a166e8e32bef Description: MOSFET N-CH 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
1+480.56 грн
50+332.13 грн
100+302.00 грн
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IPW65R280C6FKSA1 IPW65R280C6FKSA1 Infineon Technologies IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0 Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
200+118.95 грн
Мінімальне замовлення: 200
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IPA90R500C3XKSA2 IPA90R500C3XKSA2 Infineon Technologies Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6 Description: MOSFET N-CH 900V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
2+278.52 грн
50+136.61 грн
100+123.89 грн
500+108.47 грн
1000+93.09 грн
Мінімальне замовлення: 2
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EVAL5BR2280BZ700MA1TOBO1 EVAL5BR2280BZ700MA1TOBO1 Infineon Technologies Infineon-Engineering_Report_Evaluation_board_EVAL_5BR2280BZ_700mA1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189e3ae35157a Description: EVALUATION BOARD FOR ICE5BR2280B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 700mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR2280BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 10.5 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8175.95 грн
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REF5BR2280BZ22W1TOBO1 REF5BR2280BZ22W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5BR2280BZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018180800a9c5ee5 Description: REFERENCE BOARD FOR ICE5BR2280BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 1.4A, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR2280BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3, Isolated
Power - Output: 22 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8175.95 грн
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REF5AR2280CZ22W1TOBO1 REF5AR2280CZ22W1TOBO1 Infineon Technologies Infineon-Reference_board_REF_5AR2280CZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189f602721582 Description: REFERENCE BOARD FOR ICE5AR2280CZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 1.4A, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5AR2280CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3, Isolated
Power - Output: 22 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+8943.07 грн
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IPT210N25NFDATMA1 IPT210N25NFDATMA1 Infineon Technologies Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2 Description: MV POWER MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
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IPT210N25NFDATMA1 IPT210N25NFDATMA1 Infineon Technologies Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2 Description: MV POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
на замовлення 1873 шт:
термін постачання 21-31 дні (днів)
1+686.63 грн
10+453.30 грн
100+335.60 грн
500+287.17 грн
В кошику  од. на суму  грн.
FP35R12W2T4BOMA1 FP35R12W2T4BOMA1 Infineon Technologies Infineon-FP35R12W2T4-DS-v02_02-en_de.pdf?fileId=db3a3043163797a6011638a0541501a0 Description: IGBT MOD 1200V 54A 215W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+4255.00 грн
В кошику  од. на суму  грн.
FZ1600R17HP4HOSA2 FZ1600R17HP4HOSA2 Infineon Technologies Infineon-FZ1600R17HP4-DS-v02_02-en_de.pdf?fileId=db3a3043243b5f1701246cd271196360 Description: IGBT MODULE 1700V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+47399.08 грн
В кошику  од. на суму  грн.
FS25R12W1T4B11BOMA1 FS25R12W1T4B11BOMA1 Infineon Technologies Infineon-FS25R12W1T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0f40a895ded Description: IGBT MOD 1200V 45A 205W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+2761.00 грн
В кошику  од. на суму  грн.
AUIPS1011STRL AUIPS1011STRL Infineon Technologies AUIPS1011(S)(R).pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
товару немає в наявності
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BCR523UE6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523UE6433HTMA1
Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.33W SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
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IPT017N12NM6ATMA1 Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c
IPT017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
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IPT017N12NM6ATMA1 Infineon-IPT017N12NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185c27a93a6538c
IPT017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+454.80 грн
10+293.24 грн
100+240.71 грн
В кошику  од. на суму  грн.
IPTC017N12NM6ATMA1 Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e
IPTC017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
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IPTC017N12NM6ATMA1 Infineon-IPTC017N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c850f4bee0185c27a6afa537e
IPTC017N12NM6ATMA1
Виробник: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 331A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 275µA
Supplier Device Package: PG-HDSOP-16-U01
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
на замовлення 1732 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+566.69 грн
10+386.49 грн
100+301.52 грн
В кошику  од. на суму  грн.
IR4311MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4311MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 35W PQFN22
Packaging: Tape & Reel (TR)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
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IR4311MTRPBF ir4301.pdf?fileId=5546d462533600a4015355d5fc691819
IR4311MTRPBF
Виробник: Infineon Technologies
Description: IC AMP CLASS D MONO 35W PQFN22
Packaging: Cut Tape (CT)
Features: Depop, Differential Inputs
Package / Case: 22-PowerVQFN
Output Type: 1-Channel (Mono)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 100°C (TA)
Max Output Power x Channels @ Load: 35W x 1 @ 4Ohm
Supplier Device Package: 22-PQFN (5x6)
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+280.93 грн
10+204.17 грн
25+187.43 грн
100+158.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1399BN-12VXIT
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tape & Reel (TR)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399BN-12VXIT Infineon-CY7C1399BN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2fd5f37f9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1399BN-12VXIT
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Cut Tape (CT)
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 811 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+209.29 грн
10+188.51 грн
25+183.00 грн
50+167.81 грн
100+163.87 грн
250+158.68 грн
500+152.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY7C1399B-12VC CY7C1399B%20RevD.pdf
CY7C1399B-12VC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-12ZC CY7C1399B%20RevD.pdf
CY7C1399B-12ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 3219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
333+67.83 грн
Мінімальне замовлення: 333
В кошику  од. на суму  грн.
CY7C1399B-12ZC CY7C1399B%20RevD.pdf
CY7C1399B-12ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-15ZC CY7C1399B%20RevD.pdf
CY7C1399B-15ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1399B-12VXC CY7C1399B%20RevD.pdf
CY7C1399B-12VXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1399B-15VXC CY7C1399B%20RevD.pdf
CY7C1399B-15VXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1399B-12ZXC CY7C1399B%20RevD.pdf
CY7C1399B-12ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY7C1399B-15ZXC CY7C1399B%20RevD.pdf
CY7C1399B-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
226+107.06 грн
Мінімальне замовлення: 226
В кошику  од. на суму  грн.
CY7C1399B-15ZXC CY7C1399B%20RevD.pdf
CY7C1399B-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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IDW30G120C5BFKSA1 Infineon-20140610_IDW30G120C5-DS-v02_00-en.pdf?fileId=5546d461464245d30146956f595b6a6b
IDW30G120C5BFKSA1
Виробник: Infineon Technologies
Description: DIODE ARR SIC 1200V 44A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 44A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
на замовлення 1147 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+796.91 грн
30+478.06 грн
В кошику  од. на суму  грн.
KPY57-RK INFNS03494-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: SENSOR 870.2PSI 0.2" .2V TO8-5
Packaging: Bulk
Package / Case: TO-8 Style, 8 Leads
Output Type: Wheatstone Bridge
Mounting Type: Through Hole
Output: 0 mV ~ 200 mV
Operating Pressure: 870.2PSI (6000kPa)
Operating Temperature: -40°C ~ 125°C
Termination Style: PC Pins
Voltage - Supply: 12V
Port Size: Male - 0.2" (5.1mm) Tube
Applications: Board Mount
Supplier Device Package: TO-8-5
Port Style: Barbless
Maximum Pressure: 1450.38PSI (10000kPa)
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+2517.91 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
IGO60R070D1AUMA2 Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA2
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
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IGO60R070D1AUMA2 Infineon-IGO60R070D1-DataSheet-v02_11-EN.pdf?fileId=5546d46265f064ff016685f053216514
IGO60R070D1AUMA2
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Cut Tape (CT)
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-DSO-20-85
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1025.52 грн
10+692.90 грн
100+526.57 грн
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CYW55572MIFFBG
Виробник: Infineon Technologies
Description: RF TXRX MODULE WIFI
Packaging: Tray
товару немає в наявності
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IRSM836-084MATR irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c
IRSM836-084MATR
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+298.41 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRSM836-084MATR irsm836-084ma.pdf?fileId=5546d462533600a40153567f2ba0289c
IRSM836-084MATR
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 7A 36QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 36-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 310mOhm
Applications: AC Motors
Current - Output / Channel: 7A
Current - Peak Output: 27A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 36-PQFN (12x12)
Fault Protection: UVLO
Load Type: Inductive
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+559.45 грн
10+416.02 грн
25+385.22 грн
100+329.80 грн
250+314.67 грн
500+305.56 грн
1000+293.17 грн
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SIGC12T60SNCX1SA3 SIGC12T60SNC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX7SA2
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX7SA2
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA5 SIGC12T60NC_ed2_11-28-03.pdf
SIGC12T60NCX1SA5
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA4 SIGC12T60NC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60NCX1SA3 SIGC12T60NC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX1SA2 SIGC12T60SNC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX7SA1
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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SIGC12T60SNCX1SA4 SIGC12T60SNC_ed2_11-28-03.pdf
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: Die
IGBT Type: NPT
Td (on/off) @ 25°C: 29ns/266ns
Test Condition: 400V, 10A, 25Ohm, 15V
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
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XC836MT2FRAABKXUMA1 Infineon-XC835_XC836-DS-v01_04-cn.pdf?fileId=db3a30432ba3fa6f012baa1500492fd3
XC836MT2FRAABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Number of I/O: 23
DigiKey Programmable: Not Verified
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CY8CKIT-009A CY8C38_PSoC-3_RevQ.pdf
CY8CKIT-009A
Виробник: Infineon Technologies
Description: CY8C38/CY8CKIT-001(A) EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: 8051
Utilized IC / Part: CY8C38, CY8CKIT-001(A)
на замовлення 567 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+842.79 грн
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F3L8MR12W2M1HB11BPSA1
F3L8MR12W2M1HB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+17460.32 грн
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CY8C5688AXI-LP099 download
CY8C5688AXI-LP099
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 2x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
на замовлення 752 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1736.29 грн
10+1350.30 грн
90+1276.27 грн
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CYAT81658-100AS48T PdfFile984121.pdf
CYAT81658-100AS48T
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+593.62 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
CYAT81658-100AS48T PdfFile984121.pdf
CYAT81658-100AS48T
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1040.81 грн
10+790.88 грн
25+737.97 грн
100+638.03 грн
250+612.04 грн
500+596.37 грн
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CYPD3173-24LQXQ Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3173-24LQXQ
Виробник: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
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CYPD3173-24LQXQT Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3173-24LQXQT
Виробник: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
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CYPD3173P-24LQXQ Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3173P-24LQXQ
Виробник: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
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CYPD3135-40LQXQ Infineon-EZ-PD_CCG3_USB_Type-C_Controller_with_Power_Delivery-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed8b45c5a56
CYPD3135-40LQXQ
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
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CYPD3120-40LQXIT download
CYPD3120-40LQXIT
Виробник: Infineon Technologies
Description: CCG3
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
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CYPD3123-40LQXI download
CYPD3123-40LQXI
Виробник: Infineon Technologies
Description: CCG3
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 21.5V
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 16
DigiKey Programmable: Not Verified
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IRMCK341TY irmck341.pdf?fileId=5546d462533600a401535672ce66275e
IRMCK341TY
Виробник: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
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IPA60R210CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPA60R210CFD7XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_NEW
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.41 грн
50+92.24 грн
100+85.43 грн
500+70.01 грн
Мінімальне замовлення: 2
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IPA60R060C7XKSA1 Infineon-IPA60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a166e8e32bef
IPA60R060C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+480.56 грн
50+332.13 грн
100+302.00 грн
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IPW65R280C6FKSA1 IPW65R280C6_2_0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432a7fedfc012a8aceded858e0
IPW65R280C6FKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
200+118.95 грн
Мінімальне замовлення: 200
В кошику  од. на суму  грн.
IPA90R500C3XKSA2 Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6
IPA90R500C3XKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.52 грн
50+136.61 грн
100+123.89 грн
500+108.47 грн
1000+93.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVAL5BR2280BZ700MA1TOBO1 Infineon-Engineering_Report_Evaluation_board_EVAL_5BR2280BZ_700mA1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189e3ae35157a
EVAL5BR2280BZ700MA1TOBO1
Виробник: Infineon Technologies
Description: EVALUATION BOARD FOR ICE5BR2280B
Packaging: Bulk
Voltage - Output: 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 700mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE5BR2280BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 10.5 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8175.95 грн
В кошику  од. на суму  грн.
REF5BR2280BZ22W1TOBO1 Infineon-Reference_board_REF_5BR2280BZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018180800a9c5ee5
REF5BR2280BZ22W1TOBO1
Виробник: Infineon Technologies
Description: REFERENCE BOARD FOR ICE5BR2280BZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 1.4A, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5BR2280BZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3, Isolated
Power - Output: 22 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8175.95 грн
В кошику  од. на суму  грн.
REF5AR2280CZ22W1TOBO1 Infineon-Reference_board_REF_5AR2280CZ_22W1-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c80f4d329018189f602721582
REF5AR2280CZ22W1TOBO1
Виробник: Infineon Technologies
Description: REFERENCE BOARD FOR ICE5AR2280CZ
Packaging: Bulk
Voltage - Output: 5V, 12V, 15V
Voltage - Input: 85 ~ 264 VAC
Current - Output: 1.4A, 300mA, 150mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE5AR2280CZ
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 3, Isolated
Power - Output: 22 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8943.07 грн
В кошику  од. на суму  грн.
IPT210N25NFDATMA1 Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2
IPT210N25NFDATMA1
Виробник: Infineon Technologies
Description: MV POWER MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
товару немає в наявності
В кошику  од. на суму  грн.
IPT210N25NFDATMA1 Infineon-IPT210N25NFD-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be9c171f2
IPT210N25NFDATMA1
Виробник: Infineon Technologies
Description: MV POWER MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 267µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
на замовлення 1873 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+686.63 грн
10+453.30 грн
100+335.60 грн
500+287.17 грн
В кошику  од. на суму  грн.
FP35R12W2T4BOMA1 Infineon-FP35R12W2T4-DS-v02_02-en_de.pdf?fileId=db3a3043163797a6011638a0541501a0
FP35R12W2T4BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 54A 215W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4255.00 грн
В кошику  од. на суму  грн.
FZ1600R17HP4HOSA2 Infineon-FZ1600R17HP4-DS-v02_02-en_de.pdf?fileId=db3a3043243b5f1701246cd271196360
FZ1600R17HP4HOSA2
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 1600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 10500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 130 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+47399.08 грн
В кошику  од. на суму  грн.
FS25R12W1T4B11BOMA1 Infineon-FS25R12W1T4_B11-DS-v02_00-en_de.pdf?fileId=db3a30432ad629a6012af0f40a895ded
FS25R12W1T4B11BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 45A 205W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2761.00 грн
В кошику  од. на суму  грн.
AUIPS1011STRL AUIPS1011(S)(R).pdf
AUIPS1011STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
товару немає в наявності
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