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IDP2309XUMA1 IDP2309XUMA1 Infineon Technologies Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+241.00 грн
10+194.76 грн
100+157.57 грн
500+131.44 грн
1000+112.55 грн
Мінімальне замовлення: 2
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CYPD2134A-24LQXQ CYPD2134A-24LQXQ Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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CYPD2134A-24LQXQT CYPD2134A-24LQXQT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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CYPDC1185B2-32LQXQ CYPDC1185B2-32LQXQ Infineon Technologies Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37 Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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CYPDC1185B2-32LQXQT CYPDC1185B2-32LQXQT Infineon Technologies Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37 Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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IRFR18N15DPBF IRFR18N15DPBF Infineon Technologies irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069 description Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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TLF35585QVS01XUMA1 TLF35585QVS01XUMA1 Infineon Technologies Infineon-TLF35585QVS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb0c65057 Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QVS02XUMA1 TLF35585QVS02XUMA1 Infineon Technologies Infineon-TLF35585QVS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054 Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QUS01XUMA1 TLF35585QUS01XUMA1 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QUS02XUMA1 TLF35585QUS02XUMA1 Infineon Technologies Infineon-TLF35585QUS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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SFH756 Infineon Technologies SFH756_756V.pdf Description: XMITTER FIBER OPTIC 660NM
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
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IRF1010EPBF IRF1010EPBF Infineon Technologies irf1010epbf.pdf?fileId=5546d462533600a4015355da5fa41883 description Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1949 шт:
термін постачання 21-31 дні (днів)
3+148.18 грн
50+69.02 грн
100+61.83 грн
500+46.20 грн
1000+42.40 грн
Мінімальне замовлення: 3
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IRFR4105ZPBF IRFR4105ZPBF Infineon Technologies irfr4105zpbf.pdf?fileId=5546d462533600a4015356321faf20ee description Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRGP4063D1-EPBF IRGP4063D1-EPBF Infineon Technologies IRGP4063D1%28-E%29PBF.pdf Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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IRGP4063D1PBF IRGP4063D1PBF Infineon Technologies IRGP4063D1%28-E%29PBF.pdf Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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IRGP4063D-EPBF IRGP4063D-EPBF Infineon Technologies IRGP4063D%28-E%29PbF.pdf Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
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IRGP4062D-EPBF IRGP4062D-EPBF Infineon Technologies IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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ESD121B1W0201E6327XTSA1 ESD121B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175 Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
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ESD121B1W0201E6327XTSA1 ESD121B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175 Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
на замовлення 9845 шт:
термін постачання 21-31 дні (днів)
31+11.07 грн
45+7.30 грн
100+3.40 грн
500+2.92 грн
1000+2.39 грн
2000+2.36 грн
5000+2.29 грн
Мінімальне замовлення: 31
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OC2321VQFN8XTMA2 Infineon Technologies Description: OC23VQESINDUSTRY
Packaging: Bulk
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BGT80E6327XTMA1 BGT80E6327XTMA1 Infineon Technologies Description: BACKHAUL TRANSCEICER
Packaging: Bulk
на замовлення 5175 шт:
термін постачання 21-31 дні (днів)
5+5978.22 грн
Мінімальне замовлення: 5
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BGT80E6327XTSA1 BGT80E6327XTSA1 Infineon Technologies BGT70_BGT80-70_80GHz_Radar_PB.pdf?fileId=db3a30433de4e67f013df36d4ad467b1 Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
на замовлення 9474 шт:
термін постачання 21-31 дні (днів)
5+5722.91 грн
Мінімальне замовлення: 5
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CY3202-C Infineon Technologies PSoC Dev. Tools Selector Guide.pdf Description: PSOC C-COMPILER FOR CY8C25/8C26
Type: Compiler
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IKY150N65EH7XKSA1 IKY150N65EH7XKSA1 Infineon Technologies Infineon-IKY150N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701892507ba8f202d Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
1+922.39 грн
30+536.59 грн
120+459.53 грн
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IRGP30B120KD-EP IRGP30B120KD-EP Infineon Technologies irgp30b120kd-epbf.pdf?fileId=5546d462533600a401535655acdb2440 Description: IGBT NPT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
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SAK-XC2263N40F40LAAKXUMA1 SAK-XC2263N40F40LAAKXUMA1 Infineon Technologies Infineon-XC223XN-DS-v01_06-en.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAF-XE164HM-72F80LAA SAF-XE164HM-72F80LAA Infineon Technologies INFNS15545-1.pdf?t.download=true&u=5oefqw Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRGP50B60PD1PBF IRGP50B60PD1PBF Infineon Technologies irgp50b60pd1pbf.pdf?fileId=5546d462533600a401535656c5e9248a Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
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IRGP50B60PDPBF IRGP50B60PDPBF Infineon Technologies irgp50b60pdpbf.pdf?fileId=5546d462533600a401535656ce5f248c Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
товару немає в наявності
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AUIRGP50B60PD1 AUIRGP50B60PD1 Infineon Technologies AUIRGP50B60PD1%28E%29.pdf Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 Infineon Technologies Infineon-IKQ50N120CT2-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015c0be00a1b0a7a Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
1+739.19 грн
30+421.45 грн
120+357.69 грн
510+308.01 грн
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 IPD65R1K4C6ATMA1 Infineon Technologies Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+22.80 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 IPD65R1K4C6ATMA1 Infineon Technologies Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 12335 шт:
термін постачання 21-31 дні (днів)
4+99.64 грн
10+60.85 грн
100+40.31 грн
500+29.55 грн
1000+26.88 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD65R420CFDAATMA1 IPD65R420CFDAATMA1 Infineon Technologies Infineon-IPD65R420CFDA-DS-v02_01-EN.pdf?fileId=db3a30433ea3aef6013eac59c2420dff Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1919 шт:
термін постачання 21-31 дні (днів)
2+195.02 грн
10+120.96 грн
100+82.99 грн
500+62.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD65R1K0CEAUMA1 IPD65R1K0CEAUMA1 Infineon Technologies Infineon-IPD65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015385336909754c Description: MOSFET N-CH 650V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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IPD65R1K4CFDATMA1 IPD65R1K4CFDATMA1 Infineon Technologies Infineon-IPD65R1K4CFD-DS-v02_01-en.pdf?fileId=db3a304338ec6d3901390056583f48f4 Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 Infineon Technologies Infineon-IPD65R660CFD-DataSheet-v02_07-EN.pdf?fileId=db3a30433efacd9a013f0a34774b30ac Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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IPD65R420CFDATMA1 IPD65R420CFDATMA1 Infineon Technologies Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997 Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2526 шт:
термін постачання 21-31 дні (днів)
249+88.34 грн
Мінімальне замовлення: 249
В кошику  од. на суму  грн.
TT425N12KOFHPSA2 TT425N12KOFHPSA2 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.2 kV
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FM22L16-55-TGTR FM22L16-55-TGTR Infineon Technologies Infineon-FM22L16_4_MBIT_(256K_X_16)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec87dbd40fc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+2333.72 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY9AF312LPMC1-G-MJE1 CY9AF312LPMC1-G-MJE1 Infineon Technologies Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+618.26 грн
10+461.77 грн
25+428.40 грн
160+358.70 грн
320+347.49 грн
640+338.27 грн
1120+326.58 грн
В кошику  од. на суму  грн.
CY9AF312LAPMC1-G-MNE2 CY9AF312LAPMC1-G-MNE2 Infineon Technologies Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1 Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+618.26 грн
10+461.77 грн
25+428.40 грн
160+358.70 грн
320+347.49 грн
640+338.27 грн
1120+326.58 грн
В кошику  од. на суму  грн.
CY9AF312LPMC-G-MJE1 CY9AF312LPMC-G-MJE1 Infineon Technologies infineon-cy9af311l-m-n-cy9af312l-m-n-cy9af314l-m-n-cy9af315m-n-cy9af316m-n-fm3-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1&utm_source=cypress&utm_medium=referral&utm_campaig Description: IC MCU 32BIT
Packaging: Tray
DigiKey Programmable: Not Verified
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CG7423AF Infineon Technologies Description: IC MICROPOWER SRAM 48TSOP I
Packaging: Tray
DigiKey Programmable: Not Verified
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CG7423AFT Infineon Technologies Description: IC MICROPOWER SRAM 48TSOP I
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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TLE9350XSJXTMA1 TLE9350XSJXTMA1 Infineon Technologies Infineon-TLE9350XSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eeb1121256 Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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TLE9350XSJXTMA1 TLE9350XSJXTMA1 Infineon Technologies Infineon-TLE9350XSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eeb1121256 Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)
4+86.01 грн
10+59.37 грн
25+53.76 грн
100+44.58 грн
250+41.79 грн
500+40.10 грн
1000+38.08 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPG20N06S2L50AATMA1 IPG20N06S2L50AATMA1 Infineon Technologies Infineon-IPG20N06S2L_50A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d4552ed7b51ae Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
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IPG20N06S2L50AATMA1 IPG20N06S2L50AATMA1 Infineon Technologies Infineon-IPG20N06S2L_50A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d4552ed7b51ae Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4976 шт:
термін постачання 21-31 дні (днів)
3+128.59 грн
10+78.89 грн
100+52.92 грн
500+39.21 грн
1000+35.85 грн
2000+35.64 грн
Мінімальне замовлення: 3
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98-0193 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOSFET HS PWR SW 35A D2PAK
Packaging: Tube
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XMC1201T038F0128ABXUMA1 XMC1201T038F0128ABXUMA1 Infineon Technologies XMC1200.pdf Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
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ESD307U102NE6327XTSA1 ESD307U102NE6327XTSA1 Infineon Technologies Infineon-ESD307-U1-02N-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d43228a7f27d7 Description: TVS DIODE 10VWM 29VC TSNP-2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 34A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 800W
Power Line Protection: No
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ESD307U102NE6327XTSA1 ESD307U102NE6327XTSA1 Infineon Technologies Infineon-ESD307-U1-02N-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d43228a7f27d7 Description: TVS DIODE 10VWM 29VC TSNP-2-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 34A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 800W
Power Line Protection: No
на замовлення 6100 шт:
термін постачання 21-31 дні (днів)
9+41.73 грн
10+34.36 грн
100+23.86 грн
500+17.48 грн
1000+14.21 грн
2000+12.70 грн
Мінімальне замовлення: 9
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IRLZ34NSPBF IRLZ34NSPBF Infineon Technologies irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722 Description: MOSFET N-CH 55V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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CY8C9560A-24AXI CY8C9560A-24AXI Infineon Technologies Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tray
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+844.79 грн
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ICE3A2065ZXKLA1 ICE3A2065ZXKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Power (Watts): 57 W
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AUIRF3710Z AUIRF3710Z Infineon Technologies AUIRF3710Z%28S%29.pdf Description: MOSFET N-CH 100V 59A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
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CY7C1480BV33-250BZXC CY7C1480BV33-250BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
3+12665.83 грн
Мінімальне замовлення: 3
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CY8C4014SXS-421Z CY8C4014SXS-421Z Infineon Technologies download Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Grade: Automotive
Number of I/O: 13
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 421 шт:
термін постачання 21-31 дні (днів)
2+291.25 грн
10+211.33 грн
48+184.43 грн
144+160.97 грн
288+155.04 грн
Мінімальне замовлення: 2
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IDP2309XUMA1
IDP2309XUMA1
Виробник: Infineon Technologies
Description: XDP SMPS TV/PC
Packaging: Cut Tape (CT)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+241.00 грн
10+194.76 грн
100+157.57 грн
500+131.44 грн
1000+112.55 грн
Мінімальне замовлення: 2
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CYPD2134A-24LQXQ Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b
CYPD2134A-24LQXQ
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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CYPD2134A-24LQXQT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b
CYPD2134A-24LQXQT
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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CYPDC1185B2-32LQXQ Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37
CYPDC1185B2-32LQXQ
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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CYPDC1185B2-32LQXQT Infineon-EZ-PD_CCG3PA2_DATASHEET_USB_TYPE-C_PORT_CONTROLLER-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd01802832031e7f37
CYPDC1185B2-32LQXQT
Виробник: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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IRFR18N15DPBF description irfr18n15dpbf.pdf?fileId=5546d462533600a40153562d7a002069
IRFR18N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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TLF35585QVS01XUMA1 Infineon-TLF35585QVS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb0c65057
TLF35585QVS01XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QVS02XUMA1 Infineon-TLF35585QVS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054
TLF35585QVS02XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QUS01XUMA1 Infineon-TLF35585QUS01-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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TLF35585QUS02XUMA1 Infineon-TLF35585QUS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a
TLF35585QUS02XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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SFH756 SFH756_756V.pdf
Виробник: Infineon Technologies
Description: XMITTER FIBER OPTIC 660NM
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
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IRF1010EPBF description irf1010epbf.pdf?fileId=5546d462533600a4015355da5fa41883
IRF1010EPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
на замовлення 1949 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+148.18 грн
50+69.02 грн
100+61.83 грн
500+46.20 грн
1000+42.40 грн
Мінімальне замовлення: 3
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IRFR4105ZPBF description irfr4105zpbf.pdf?fileId=5546d462533600a4015356321faf20ee
IRFR4105ZPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IRGP4063D1-EPBF IRGP4063D1%28-E%29PBF.pdf
IRGP4063D1-EPBF
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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IRGP4063D1PBF IRGP4063D1%28-E%29PBF.pdf
IRGP4063D1PBF
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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IRGP4063D-EPBF IRGP4063D%28-E%29PbF.pdf
IRGP4063D-EPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
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IRGP4062D-EPBF IRG%28B%2CP%294062DPbF%28-EPbF%29.pdf
IRGP4062D-EPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
товару немає в наявності
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ESD121B1W0201E6327XTSA1 Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175
ESD121B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
товару немає в наявності
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ESD121B1W0201E6327XTSA1 Infineon-ESD121-B1-W0201-DataSheet-v01_01-EN.pdf?fileId=5546d46272aa54c00172cccef3990175
ESD121B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
на замовлення 9845 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+11.07 грн
45+7.30 грн
100+3.40 грн
500+2.92 грн
1000+2.39 грн
2000+2.36 грн
5000+2.29 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
OC2321VQFN8XTMA2
Виробник: Infineon Technologies
Description: OC23VQESINDUSTRY
Packaging: Bulk
товару немає в наявності
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BGT80E6327XTMA1
BGT80E6327XTMA1
Виробник: Infineon Technologies
Description: BACKHAUL TRANSCEICER
Packaging: Bulk
на замовлення 5175 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+5978.22 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BGT80E6327XTSA1 BGT70_BGT80-70_80GHz_Radar_PB.pdf?fileId=db3a30433de4e67f013df36d4ad467b1
BGT80E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
на замовлення 9474 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+5722.91 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CY3202-C PSoC Dev. Tools Selector Guide.pdf
Виробник: Infineon Technologies
Description: PSOC C-COMPILER FOR CY8C25/8C26
Type: Compiler
товару немає в наявності
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IKY150N65EH7XKSA1 Infineon-IKY150N65EH7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701892507ba8f202d
IKY150N65EH7XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+922.39 грн
30+536.59 грн
120+459.53 грн
В кошику  од. на суму  грн.
IRGP30B120KD-EP irgp30b120kd-epbf.pdf?fileId=5546d462533600a401535655acdb2440
IRGP30B120KD-EP
Виробник: Infineon Technologies
Description: IGBT NPT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
товару немає в наявності
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SAK-XC2263N40F40LAAKXUMA1 Infineon-XC223XN-DS-v01_06-en.pdf?t.download=true&u=5oefqw
SAK-XC2263N40F40LAAKXUMA1
Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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SAF-XE164HM-72F80LAA INFNS15545-1.pdf?t.download=true&u=5oefqw
SAF-XE164HM-72F80LAA
Виробник: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
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IRGP50B60PD1PBF irgp50b60pd1pbf.pdf?fileId=5546d462533600a401535656c5e9248a
IRGP50B60PD1PBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
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IRGP50B60PDPBF irgp50b60pdpbf.pdf?fileId=5546d462533600a401535656ce5f248c
IRGP50B60PDPBF
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
товару немає в наявності
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AUIRGP50B60PD1 AUIRGP50B60PD1%28E%29.pdf
AUIRGP50B60PD1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
товару немає в наявності
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IKQ50N120CT2XKSA1 Infineon-IKQ50N120CT2-DS-v02_01-EN.pdf?fileId=5546d4625bd71aa0015c0be00a1b0a7a
IKQ50N120CT2XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+739.19 грн
30+421.45 грн
120+357.69 грн
510+308.01 грн
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d
IPD65R1K4C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+22.80 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD65R1K4C6ATMA1 Infineon-IPD65R1K4C6-DS-v02_00-en.pdf?fileId=db3a304340155f3d014034f54e9c4c0d
IPD65R1K4C6ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 12335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.64 грн
10+60.85 грн
100+40.31 грн
500+29.55 грн
1000+26.88 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD65R420CFDAATMA1 Infineon-IPD65R420CFDA-DS-v02_01-EN.pdf?fileId=db3a30433ea3aef6013eac59c2420dff
IPD65R420CFDAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1919 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+195.02 грн
10+120.96 грн
100+82.99 грн
500+62.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD65R1K0CEAUMA1 Infineon-IPD65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015385336909754c
IPD65R1K0CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
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IPD65R1K4CFDATMA1 Infineon-IPD65R1K4CFD-DS-v02_01-en.pdf?fileId=db3a304338ec6d3901390056583f48f4
IPD65R1K4CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 2.8A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 100 V
товару немає в наявності
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IPD65R660CFDATMA1 Infineon-IPD65R660CFD-DataSheet-v02_07-EN.pdf?fileId=db3a30433efacd9a013f0a34774b30ac
IPD65R660CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
товару немає в наявності
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IPD65R420CFDATMA1 Infineon-IPX65R420CFD-DataSheet-v02_06-EN.pdf?fileId=8ac78c8c82ce56640182d510b9ad5997
IPD65R420CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 300µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
товару немає в наявності
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IPD65R420CFDBTMA1 IPx65R420CFD.pdf
IPD65R420CFDBTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 2526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
249+88.34 грн
Мінімальне замовлення: 249
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TT425N12KOFHPSA2 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TT425N12KOFHPSA2
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 471 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.2 kV
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FM22L16-55-TGTR Infineon-FM22L16_4_MBIT_(256K_X_16)_F-RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec87dbd40fc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM22L16-55-TGTR
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+2333.72 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
CY9AF312LPMC1-G-MJE1 Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf
CY9AF312LPMC1-G-MJE1
Виробник: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+618.26 грн
10+461.77 грн
25+428.40 грн
160+358.70 грн
320+347.49 грн
640+338.27 грн
1120+326.58 грн
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CY9AF312LAPMC1-G-MNE2 Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1
CY9AF312LAPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MM MCU 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 9x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+618.26 грн
10+461.77 грн
25+428.40 грн
160+358.70 грн
320+347.49 грн
640+338.27 грн
1120+326.58 грн
В кошику  од. на суму  грн.
CY9AF312LPMC-G-MJE1 infineon-cy9af311l-m-n-cy9af312l-m-n-cy9af314l-m-n-cy9af315m-n-cy9af316m-n-fm3-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1&utm_source=cypress&utm_medium=referral&utm_campaig
CY9AF312LPMC-G-MJE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT
Packaging: Tray
DigiKey Programmable: Not Verified
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CG7423AF
Виробник: Infineon Technologies
Description: IC MICROPOWER SRAM 48TSOP I
Packaging: Tray
DigiKey Programmable: Not Verified
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CG7423AFT
Виробник: Infineon Technologies
Description: IC MICROPOWER SRAM 48TSOP I
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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TLE9350XSJXTMA1 Infineon-TLE9350XSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eeb1121256
TLE9350XSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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TLE9350XSJXTMA1 Infineon-TLE9350XSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eeb1121256
TLE9350XSJXTMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2373 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.01 грн
10+59.37 грн
25+53.76 грн
100+44.58 грн
250+41.79 грн
500+40.10 грн
1000+38.08 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPG20N06S2L50AATMA1 Infineon-IPG20N06S2L_50A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d4552ed7b51ae
IPG20N06S2L50AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
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IPG20N06S2L50AATMA1 Infineon-IPG20N06S2L_50A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d4552ed7b51ae
IPG20N06S2L50AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 55V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 19µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+128.59 грн
10+78.89 грн
100+52.92 грн
500+39.21 грн
1000+35.85 грн
2000+35.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
98-0193 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC MOSFET HS PWR SW 35A D2PAK
Packaging: Tube
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XMC1201T038F0128ABXUMA1 XMC1200.pdf
XMC1201T038F0128ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
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ESD307U102NE6327XTSA1 Infineon-ESD307-U1-02N-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d43228a7f27d7
ESD307U102NE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 10VWM 29VC TSNP-2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 34A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 800W
Power Line Protection: No
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ESD307U102NE6327XTSA1 Infineon-ESD307-U1-02N-DS-v01_00-EN.pdf?fileId=5546d4624cb7f111014d43228a7f27d7
ESD307U102NE6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 10VWM 29VC TSNP-2-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 270pF @ 1MHz
Current - Peak Pulse (10/1000µs): 34A (8/20µs)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: PG-TSNP-2-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 29V
Power - Peak Pulse: 800W
Power Line Protection: No
на замовлення 6100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.73 грн
10+34.36 грн
100+23.86 грн
500+17.48 грн
1000+14.21 грн
2000+12.70 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
IRLZ34NSPBF irlz34nspbf.pdf?fileId=5546d462533600a40153567210152722
IRLZ34NSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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CY8C9560A-24AXI Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9560A-24AXI
Виробник: Infineon Technologies
Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tray
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+844.79 грн
В кошику  од. на суму  грн.
ICE3A2065ZXKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A2065ZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Power (Watts): 57 W
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AUIRF3710Z AUIRF3710Z%28S%29.pdf
AUIRF3710Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 59A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
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CY7C1480BV33-250BZXC download
CY7C1480BV33-250BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+12665.83 грн
Мінімальне замовлення: 3
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CY8C4014SXS-421Z download
CY8C4014SXS-421Z
Виробник: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: D/A 1x7b, 1x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 16-SOIC
Grade: Automotive
Number of I/O: 13
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 421 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+291.25 грн
10+211.33 грн
48+184.43 грн
144+160.97 грн
288+155.04 грн
Мінімальне замовлення: 2
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