Продукція > LUGUANG ELECTRONIC > Всі товари виробника LUGUANG ELECTRONIC (1013) > Сторінка 13 з 17
| Фото | Назва | Виробник | Інформація |
Доступність |
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LGEGW25N120S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 100W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 100W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 130nC Kind of package: tube Turn-on time: 57ns Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 460ns |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A |
на замовлення 130 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A |
на замовлення 186 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 120A |
на замовлення 112 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Turn-off time: 187ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
на замовлення 122 шт: термін постачання 14-30 дні (днів) |
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LGEGW50N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
на замовлення 146 шт: термін постачання 14-30 дні (днів) |
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LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Turn-off time: 256ns Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 161ns Turn-off time: 274ns Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A |
на замовлення 115 шт: термін постачання 14-30 дні (днів) |
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LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Power dissipation: 500W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 215ns Turn-off time: 225ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A |
на замовлення 355 шт: термін постачання 14-30 дні (днів) |
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LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 156ns Turn-off time: 348ns Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
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LGET1117-1.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LGET1117-1.8 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LGET1117-2.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Kind of package: reel; tape Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Number of channels: 1 Output current: 1A Tolerance: ±1% Voltage drop: 1.15V Output voltage: 2.5V Input voltage: 3.9...10V Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 4.75...10V Kind of package: reel; tape |
на замовлення 2223 шт: термін постачання 14-30 дні (днів) |
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LGET1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
на замовлення 1733 шт: термін постачання 14-30 дні (днів) |
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LGET1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V |
на замовлення 3466 шт: термін постачання 14-30 дні (днів) |
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LL4148 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 1A Kind of package: reel; tape Case: MiniMELF glass Max. load current: 0.3A |
на замовлення 10392 шт: термін постачання 14-30 дні (днів) |
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LL4448 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 0.62V Max. load current: 0.5A Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 5025 шт: термін постачання 14-30 дні (днів) |
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M2 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.1kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 617 шт: термін постачання 14-30 дні (днів) |
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M4 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 605 шт: термін постачання 14-30 дні (днів) |
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M6 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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M7 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 1kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 1849 шт: термін постачання 14-30 дні (днів) |
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MB05F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 8804 шт: термін постачання 14-30 дні (днів) |
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MB05S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 6563 шт: термін постачання 14-30 дні (днів) |
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MB10F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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MB10M | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBM Electrical mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated |
на замовлення 5322 шт: термін постачання 14-30 дні (днів) |
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MB10S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1130 шт: термін постачання 14-30 дні (днів) |
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MB2F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 8000 шт: термін постачання 14-30 дні (днів) |
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MB2S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 2230 шт: термін постачання 14-30 дні (днів) |
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MB4S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3480 шт: термін постачання 14-30 дні (днів) |
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MB6F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1220 шт: термін постачання 14-30 дні (днів) |
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MB6S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 42860 шт: термін постачання 14-30 дні (днів) |
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MB8S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2190 шт: термін постачання 14-30 дні (днів) |
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| MCR100-6 | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor; 400V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT; bulk; Ufmax: 1.7V Type of thyristor: thyristor Max. off-state voltage: 0.4kV Max. load current: 0.8A Gate current: 0.2mA Case: TO92 Mounting: THT Kind of package: bulk Features of semiconductor devices: sensitive gate Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MCR100-6S | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 0.8A Gate current: 0.2mA Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 10A Features of semiconductor devices: sensitive gate Max. forward voltage: 1.35V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MCR100-8 | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT; bulk; Ufmax: 1.7V Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 0.2mA Case: TO92 Mounting: THT Kind of package: bulk Features of semiconductor devices: sensitive gate Max. forward voltage: 1.7V |
на замовлення 5178 шт: термін постачання 14-30 дні (днів) |
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| MCR100-8S | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 0.8A Gate current: 0.2mA Case: SOT23 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 10A Features of semiconductor devices: sensitive gate Max. forward voltage: 1.35V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJD112 TO251 THT | LUGUANG ELECTRONIC |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO251 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO251 Current gain: 200...12000 Mounting: THT Kind of package: tube Frequency: 25MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJD112 TO252 SMD | LUGUANG ELECTRONIC |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO252 Mounting: SMD Current gain: 200...12000 Frequency: 25MHz |
на замовлення 4468 шт: термін постачання 14-30 дні (днів) |
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MJD122 TO252 SMD | LUGUANG ELECTRONIC |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.5W; TO252 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.5W Case: TO252 Mounting: SMD Current gain: 100...12000 |
на замовлення 1901 шт: термін постачання 14-30 дні (днів) |
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MJD127 TO252 SMD | LUGUANG ELECTRONIC |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.5W; TO252 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.5W Case: TO252 Mounting: SMD Kind of package: reel; tape Current gain: 100...12000 |
на замовлення 3364 шт: термін постачання 14-30 дні (днів) |
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| MMBT2222A | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT2907A | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3904 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.1A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 300MHz Pulsed collector current: 0.2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3906 | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.1A; 0.25W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT3906T | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT523 Current gain: 100...300 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| mmbt4401 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBT4403 | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 200MHz |
на замовлення 4250 шт: термін постачання 14-30 дні (днів) |
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| MMBT5401 | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.5A; 0.35W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 60...240 Mounting: SMD Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBT5551 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 80...250 Mounting: SMD Frequency: 100...300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MMBTA13 | LUGUANG ELECTRONIC |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Current gain: 5000...10000 |
на замовлення 2670 шт: термін постачання 14-30 дні (днів) |
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MMBTA14 | LUGUANG ELECTRONIC |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.35W Case: SOT23 Current gain: 10000...20000 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Kind of transistor: Darlington |
на замовлення 1430 шт: термін постачання 14-30 дні (днів) |
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| MMBTA42 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 300V; 0.2A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23 Current gain: 40 Mounting: SMD Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMBTA92 | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 300V; 0.5A; 0.35W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 40 Mounting: SMD Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMST2222A | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.2W; SOT323 Current gain: 100...300 Collector-emitter voltage: 40V Polarisation: bipolar Frequency: 300MHz Type of transistor: NPN Case: SOT323 Mounting: SMD Power dissipation: 0.2W Collector current: 0.6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMST2907A | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.2W; SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.2W Case: SOT323 Current gain: 100...300 Mounting: SMD Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MPS2222A | LUGUANG ELECTRONIC |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.8A; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.8A Case: TO92 Mounting: THT Frequency: 300MHz |
на замовлення 3625 шт: термін постачання 14-30 дні (днів) |
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MPS2907 | LUGUANG ELECTRONIC |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; TO92 Polarisation: bipolar Case: TO92 Mounting: THT Type of transistor: PNP Collector current: 0.6A Collector-emitter voltage: 40V Frequency: 200MHz |
на замовлення 2275 шт: термін постачання 14-30 дні (днів) |
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| LGEGW25N120S |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
на замовлення 78 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.67 грн |
| 10+ | 133.09 грн |
| 30+ | 123.89 грн |
| LGEGW40N120F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
на замовлення 130 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 301.99 грн |
| 3+ | 251.96 грн |
| 10+ | 222.66 грн |
| 30+ | 206.75 грн |
| 120+ | 193.36 грн |
| LGEGW40N120F2 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
на замовлення 186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 310.10 грн |
| 3+ | 258.65 грн |
| 10+ | 229.36 грн |
| 30+ | 212.61 грн |
| 120+ | 198.38 грн |
| LGEGW40N120TS |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
на замовлення 112 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 301.99 грн |
| 3+ | 251.96 грн |
| 10+ | 222.66 грн |
| 30+ | 206.75 грн |
| LGEGW40N65F1 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 480 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.85 грн |
| 4+ | 130.58 грн |
| 10+ | 115.51 грн |
| 30+ | 107.14 грн |
| 120+ | 100.45 грн |
| 240+ | 97.94 грн |
| LGEGW50N65F1A |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
на замовлення 21 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.53 грн |
| 10+ | 138.12 грн |
| LGEGW50N65SEK |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 122 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.53 грн |
| 10+ | 138.12 грн |
| 30+ | 128.07 грн |
| 120+ | 120.54 грн |
| LGEGW50N65SEU |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
на замовлення 146 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.53 грн |
| 10+ | 138.12 грн |
| 30+ | 128.07 грн |
| 120+ | 120.54 грн |
| LGEGW60N65SEU |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
на замовлення 79 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 184.99 грн |
| 10+ | 164.06 грн |
| 30+ | 152.35 грн |
| LGEGW75N65F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
на замовлення 115 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 283.06 грн |
| 3+ | 236.89 грн |
| 10+ | 209.27 грн |
| 30+ | 195.04 грн |
| LGEGW75N65FP |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
на замовлення 355 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 289.37 грн |
| 3+ | 243.59 грн |
| 10+ | 214.29 грн |
| 30+ | 200.06 грн |
| 120+ | 186.67 грн |
| 240+ | 180.81 грн |
| LGEGW75N65S |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
на замовлення 78 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 283.06 грн |
| 3+ | 236.89 грн |
| 10+ | 209.27 грн |
| 30+ | 195.04 грн |
| LGET1117-1.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-1.8 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-2.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Number of channels: 1
Output current: 1A
Tolerance: ±1%
Voltage drop: 1.15V
Output voltage: 2.5V
Input voltage: 3.9...10V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Kind of package: reel; tape
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Number of channels: 1
Output current: 1A
Tolerance: ±1%
Voltage drop: 1.15V
Output voltage: 2.5V
Input voltage: 3.9...10V
Kind of voltage regulator: fixed; LDO; linear
товару немає в наявності
В кошику
од. на суму грн.
| LGET1117-3.3 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
на замовлення 2223 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 12.98 грн |
| 55+ | 7.80 грн |
| 100+ | 6.52 грн |
| 500+ | 5.51 грн |
| 1000+ | 5.19 грн |
| 2000+ | 4.68 грн |
| LGET1117-5.0 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
на замовлення 1733 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 14.42 грн |
| 50+ | 8.61 грн |
| 100+ | 7.15 грн |
| 500+ | 6.08 грн |
| 1000+ | 5.70 грн |
| LGET1117-ADJ |
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Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
на замовлення 3466 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 35+ | 13.88 грн |
| 55+ | 8.34 грн |
| 100+ | 6.96 грн |
| 500+ | 5.91 грн |
| 1000+ | 5.55 грн |
| 2000+ | 5.01 грн |
| LL4148 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Kind of package: reel; tape
Case: MiniMELF glass
Max. load current: 0.3A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Kind of package: reel; tape
Case: MiniMELF glass
Max. load current: 0.3A
на замовлення 10392 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.82 грн |
| 109+ | 3.85 грн |
| 174+ | 2.41 грн |
| 272+ | 1.54 грн |
| 414+ | 1.01 грн |
| 500+ | 0.91 грн |
| 1000+ | 0.90 грн |
| LL4448 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 5025 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 245+ | 1.85 грн |
| 635+ | 0.66 грн |
| 695+ | 0.60 грн |
| 2500+ | 0.53 грн |
| M2 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 617 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 190+ | 2.48 грн |
| 410+ | 1.03 грн |
| 550+ | 0.77 грн |
| M4 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 605 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 5.23 грн |
| 350+ | 1.21 грн |
| 500+ | 0.91 грн |
| M6 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 78 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| M7 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 1849 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 170+ | 2.70 грн |
| 330+ | 1.27 грн |
| 500+ | 0.96 грн |
| MB05F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 8804 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.77 грн |
| 140+ | 3.08 грн |
| 250+ | 2.78 грн |
| 1000+ | 2.45 грн |
| 5000+ | 2.42 грн |
| MB05S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 6563 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.64 грн |
| 75+ | 5.63 грн |
| 145+ | 2.95 грн |
| 500+ | 2.66 грн |
| 3000+ | 2.35 грн |
| MB10F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 4 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| MB10M |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
на замовлення 5322 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 10.64 грн |
| 100+ | 4.25 грн |
| 110+ | 3.82 грн |
| 500+ | 3.36 грн |
| MB10S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1130 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.86 грн |
| 125+ | 3.35 грн |
| 250+ | 3.01 грн |
| 1000+ | 2.66 грн |
| MB2F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 8000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.95 грн |
| 135+ | 3.14 грн |
| 250+ | 2.83 грн |
| 1000+ | 2.49 грн |
| MB2S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 2230 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.68 грн |
| 135+ | 3.21 грн |
| 250+ | 2.90 грн |
| 1000+ | 2.55 грн |
| MB4S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3480 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 6.31 грн |
| 135+ | 3.18 грн |
| 250+ | 2.86 грн |
| 1000+ | 2.53 грн |
| 3000+ | 2.49 грн |
| MB6F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1220 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 70+ | 6.76 грн |
| 125+ | 3.47 грн |
| 250+ | 3.11 грн |
| 1000+ | 2.75 грн |
| MB6S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 42860 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.11 грн |
| 105+ | 4.02 грн |
| 161+ | 2.60 грн |
| 500+ | 2.33 грн |
| 1000+ | 2.25 грн |
| MB8S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2190 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.86 грн |
| 145+ | 2.98 грн |
| 250+ | 2.67 грн |
| 1000+ | 2.36 грн |
| MCR100-6 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT; bulk; Ufmax: 1.7V
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.7V
Category: SMD/THT thyristors
Description: Thyristor; 400V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT; bulk; Ufmax: 1.7V
Type of thyristor: thyristor
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| MCR100-6S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 10A
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.35V
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 10A
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.35V
товару немає в наявності
В кошику
од. на суму грн.
| MCR100-8 | ![]() |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT; bulk; Ufmax: 1.7V
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.7V
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT; bulk; Ufmax: 1.7V
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.7V
на замовлення 5178 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.57 грн |
| 16+ | 27.46 грн |
| 25+ | 19.72 грн |
| 100+ | 13.85 грн |
| 250+ | 9.90 грн |
| 500+ | 8.93 грн |
| 1000+ | 7.58 грн |
| 4000+ | 5.50 грн |
| MCR100-8S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 10A
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.35V
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 10A
Features of semiconductor devices: sensitive gate
Max. forward voltage: 1.35V
товару немає в наявності
В кошику
од. на суму грн.
| MJD112 TO251 THT |
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Виробник: LUGUANG ELECTRONIC
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO251
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO251
Current gain: 200...12000
Mounting: THT
Kind of package: tube
Frequency: 25MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO251
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO251
Current gain: 200...12000
Mounting: THT
Kind of package: tube
Frequency: 25MHz
товару немає в наявності
В кошику
од. на суму грн.
| MJD112 TO252 SMD |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO252
Mounting: SMD
Current gain: 200...12000
Frequency: 25MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO252
Mounting: SMD
Current gain: 200...12000
Frequency: 25MHz
на замовлення 4468 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 17.13 грн |
| 45+ | 9.71 грн |
| MJD122 TO252 SMD |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.5W
Case: TO252
Mounting: SMD
Current gain: 100...12000
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.5W
Case: TO252
Mounting: SMD
Current gain: 100...12000
на замовлення 1901 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 16.95 грн |
| 40+ | 11.55 грн |
| 100+ | 10.46 грн |
| 500+ | 9.21 грн |
| MJD127 TO252 SMD |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.5W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...12000
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.5W
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Current gain: 100...12000
на замовлення 3364 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.21 грн |
| 40+ | 11.80 грн |
| 100+ | 10.63 грн |
| 500+ | 9.46 грн |
| 2500+ | 8.87 грн |
| MMBT2222A |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBT2907A |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3904 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.2A
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906T |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| mmbt4401 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBT4403 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
на замовлення 4250 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.56 грн |
| 350+ | 1.20 грн |
| 500+ | 1.09 грн |
| 3000+ | 0.96 грн |
| MMBT5401 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBT5551 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 80...250
Mounting: SMD
Frequency: 100...300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 80...250
Mounting: SMD
Frequency: 100...300MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMBTA13 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Current gain: 5000...10000
на замовлення 2670 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 85+ | 5.50 грн |
| 185+ | 2.28 грн |
| 250+ | 2.04 грн |
| 1000+ | 1.81 грн |
| MMBTA14 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Current gain: 10000...20000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Current gain: 10000...20000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Kind of transistor: Darlington
на замовлення 1430 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.70 грн |
| 275+ | 1.54 грн |
| 305+ | 1.39 грн |
| 1000+ | 1.23 грн |
| MMBTA42 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 40
Mounting: SMD
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.2A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Current gain: 40
Mounting: SMD
Frequency: 50MHz
товару немає в наявності
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од. на суму грн.
| MMBTA92 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 40
Mounting: SMD
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 40
Mounting: SMD
Frequency: 50MHz
товару немає в наявності
В кошику
од. на суму грн.
| MMST2222A |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.2W; SOT323
Current gain: 100...300
Collector-emitter voltage: 40V
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN
Case: SOT323
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.2W; SOT323
Current gain: 100...300
Collector-emitter voltage: 40V
Polarisation: bipolar
Frequency: 300MHz
Type of transistor: NPN
Case: SOT323
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.6A
товару немає в наявності
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од. на суму грн.
| MMST2907A |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.2W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.2W; SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.2W
Case: SOT323
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
| MPS2222A | ![]() |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: TO92
Mounting: THT
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.8A; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.8A
Case: TO92
Mounting: THT
Frequency: 300MHz
на замовлення 3625 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 175+ | 2.60 грн |
| 325+ | 1.33 грн |
| 350+ | 1.21 грн |
| 1000+ | 1.06 грн |
| MPS2907 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; TO92
Polarisation: bipolar
Case: TO92
Mounting: THT
Type of transistor: PNP
Collector current: 0.6A
Collector-emitter voltage: 40V
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; TO92
Polarisation: bipolar
Case: TO92
Mounting: THT
Type of transistor: PNP
Collector current: 0.6A
Collector-emitter voltage: 40V
Frequency: 200MHz
на замовлення 2275 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 225+ | 2.16 грн |
| 400+ | 1.11 грн |
| 425+ | 1.00 грн |
| 1000+ | 0.99 грн |



























