Продукція > LUGUANG ELECTRONIC > Всі товари виробника LUGUANG ELECTRONIC (1232) > Сторінка 15 з 21
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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LGEA1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Number of channels: 1 Kind of package: reel; tape Tolerance: ±1% Input voltage: 4.75...10V Operating temperature: 0...125°C |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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LGEA1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Tolerance: ±1% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 6.5...12V Output current: 1A Type of integrated circuit: voltage regulator Voltage drop: 1.15V Operating temperature: 0...125°C Output voltage: 5V Kind of package: reel; tape Case: SOT89 Number of channels: 1 |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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LGEA1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V |
на замовлення 920 шт: термін постачання 14-30 дні (днів) |
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LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 125W Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Turn-on time: 40ns Turn-off time: 150ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 558 шт: термін постачання 14-30 дні (днів) |
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LGEGF15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Collector current: 15A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 60A Turn-on time: 40ns Turn-off time: 150ns Gate-emitter voltage: ±20V |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 15A Power dissipation: 125W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 45nC Kind of package: tube Turn-on time: 40ns Turn-off time: 150ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 124 шт: термін постачання 14-30 дні (днів) |
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LGEGW100N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS Type of transistor: IGBT Power dissipation: 500W Case: TO247PLUS Mounting: THT Gate charge: 135nC Kind of package: tube Collector current: 100A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 300A Turn-on time: 205ns Turn-off time: 375ns Gate-emitter voltage: ±20V |
на замовлення 56 шт: термін постачання 14-30 дні (днів) |
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LGEGW15N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 40W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 40W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 45A Mounting: THT Gate charge: 0.12µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 50ns Turn-off time: 245ns |
на замовлення 337 шт: термін постачання 14-30 дні (днів) |
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LGEGW20N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±30V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 80A Turn-on time: 74ns Turn-off time: 232ns Gate charge: 82nC |
на замовлення 130 шт: термін постачання 14-30 дні (днів) |
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LGEGW25N120S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 25A; 100W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 100W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 460ns Turn-on time: 57ns |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 110W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 503ns Turn-on time: 134ns |
на замовлення 130 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 417W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 270ns Turn-on time: 135ns |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 300W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 310ns Turn-on time: 121ns |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Kind of package: tube Turn-off time: 187ns Gate charge: 83nC Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 96ns |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Power dissipation: 151W Gate charge: 0.21µC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 240A Turn-on time: 123ns Turn-off time: 256ns Gate-emitter voltage: ±20V Collector current: 60A Collector-emitter voltage: 650V |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 71W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 300A Mounting: THT Gate charge: 192nC Kind of package: tube Turn-on time: 161ns Turn-off time: 274ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 114 шт: термін постачання 14-30 дні (днів) |
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LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 500W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 130nC Kind of package: tube Turn-on time: 215ns Turn-off time: 225ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 139 шт: термін постачання 14-30 дні (днів) |
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LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 250W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 300A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 156ns Turn-off time: 348ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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LGET1117-1.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...10V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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LGET1117-1.8 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape Tolerance: ±1% Input voltage: 4.75...10V Operating temperature: 0...125°C |
на замовлення 2003 шт: термін постачання 14-30 дні (днів) |
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LGET1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Tolerance: ±1% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 6.5...12V Output current: 1A Type of integrated circuit: voltage regulator Voltage drop: 1.15V Operating temperature: 0...125°C Output voltage: 5V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
на замовлення 3598 шт: термін постачання 14-30 дні (днів) |
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LGET1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape |
на замовлення 2946 шт: термін постачання 14-30 дні (днів) |
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LL4148 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 0.62V Max. load current: 0.3A Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 9272 шт: термін постачання 14-30 дні (днів) |
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LL4150 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 0.4A; MiniMELF glass; Ifsm: 1A Mounting: SMD Max. forward impulse current: 1A Max. off-state voltage: 50V Load current: 0.4A Max. load current: 0.6A Kind of package: reel; tape Semiconductor structure: single diode Case: MiniMELF glass Type of diode: switching |
на замовлення 13125 шт: термін постачання 14-30 дні (днів) |
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LL4151 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 50V Load current: 0.3A Semiconductor structure: single diode Case: MiniMELF glass Max. load current: 0.4A Max. forward impulse current: 0.5A Kind of package: reel; tape |
на замовлення 10665 шт: термін постачання 14-30 дні (днів) |
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LL4448 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 0.62V Max. forward impulse current: 1A Kind of package: reel; tape Max. load current: 0.5A |
на замовлення 175 шт: термін постачання 14-30 дні (днів) |
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M4 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 565 шт: термін постачання 14-30 дні (днів) |
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M6 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward impulse current: 30A Semiconductor structure: single diode Case: SMAJ Mounting: SMD Kind of package: reel; tape Max. forward voltage: 1.1V Load current: 1A |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||||
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MB05F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 8804 шт: термін постачання 14-30 дні (днів) |
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MB05S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 6563 шт: термін постачання 14-30 дні (днів) |
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MB10F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2324 шт: термін постачання 14-30 дні (днів) |
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MB10M | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBM Electrical mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated |
на замовлення 5012 шт: термін постачання 14-30 дні (днів) |
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MB10S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MB2F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 8000 шт: термін постачання 14-30 дні (днів) |
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MB2S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2230 шт: термін постачання 14-30 дні (днів) |
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MB4S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 2835 шт: термін постачання 14-30 дні (днів) |
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MB6F | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBF; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: MBF Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 1070 шт: термін постачання 14-30 дні (днів) |
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MB6M | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBM; THT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: MBM Electrical mounting: THT Kind of package: bulk Features of semiconductor devices: glass passivated |
на замовлення 3428 шт: термін постачання 14-30 дні (днів) |
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MB6S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
на замовлення 70600 шт: термін постачання 14-30 дні (днів) |
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MB8S | LUGUANG ELECTRONIC |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 0.5A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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MCR100-6 | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor: standard; Urmax: 400V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT Type of thyristor: standard Max. off-state voltage: 0.4kV Max. load current: 0.8A Gate current: 0.2mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward voltage: 1.7V Features of semiconductor devices: sensitive gate |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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MCR100-6S | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor: standard; Urmax: 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD Type of thyristor: standard Max. off-state voltage: 0.8kV Max. load current: 0.8A Gate current: 0.2mA Case: SOT23 Mounting: SMD Max. forward impulse current: 10A Kind of package: reel; tape Max. forward voltage: 1.35V Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCR100-8 | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor: standard; Urmax: 600V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT Type of thyristor: standard Max. off-state voltage: 0.6kV Max. load current: 0.8A Gate current: 0.2mA Case: TO92 Mounting: THT Kind of package: bulk Max. forward voltage: 1.7V Features of semiconductor devices: sensitive gate |
на замовлення 5192 шт: термін постачання 14-30 дні (днів) |
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MCR100-8S | LUGUANG ELECTRONIC |
Category: SMD/THT thyristorsDescription: Thyristor: standard; Urmax: 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD Type of thyristor: standard Max. off-state voltage: 0.8kV Max. load current: 0.8A Gate current: 0.2mA Case: SOT23 Mounting: SMD Max. forward impulse current: 10A Kind of package: reel; tape Max. forward voltage: 1.35V Features of semiconductor devices: sensitive gate |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MDC100A-08 | LUGUANG ELECTRONIC |
Category: Diode modulesDescription: Module: diode; double series; 800V; If: 100A; M01H; Ufmax: 1.45V Max. forward impulse current: 2.6kA Max. forward voltage: 1.45V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 0.8kV Electrical mounting: screw Load current: 100A Max. load current: 157A Semiconductor structure: double series Case: M01H |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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MDK46-18 | LUGUANG ELECTRONIC |
Category: Diode modules Description: Module: diode; double,common cathode; 1.8kV; If: 46A; M01H; screw Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.8kV Load current: 46A Case: M01H Max. forward voltage: 1.45V Max. forward impulse current: 1.3kA Electrical mounting: screw Max. load current: 72A Mechanical mounting: screw |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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MJD112 TO251 THT | LUGUANG ELECTRONIC |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO251 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO251 Current gain: 200...12000 Mounting: THT Kind of package: tube Frequency: 25MHz |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||
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MJD112 TO252 SMD | LUGUANG ELECTRONIC |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1W Case: TO252 Mounting: SMD Frequency: 25MHz Current gain: 200...12000 |
на замовлення 3718 шт: термін постачання 14-30 дні (днів) |
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MJD122 TO252 SMD | LUGUANG ELECTRONIC |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.5W; TO252 Power dissipation: 1.5W Type of transistor: NPN Current gain: 100...12000 Case: TO252 Collector current: 8A Mounting: SMD Collector-emitter voltage: 100V Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 487 шт: термін постачання 14-30 дні (днів) |
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MJD127 TO252 SMD | LUGUANG ELECTRONIC |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.5W; TO252 Power dissipation: 1.5W Type of transistor: PNP Current gain: 100...12000 Kind of package: reel; tape Case: TO252 Collector current: 8A Mounting: SMD Collector-emitter voltage: 100V Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 2009 шт: термін постачання 14-30 дні (днів) |
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MMBT2222A | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 300MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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MMBT2907A | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 200MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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MMBT3904 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.1A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 300MHz Pulsed collector current: 0.2A |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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MMBT3906 | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.1A; 0.25W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
| MMBT3906T | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SOT523 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SOT523 Current gain: 100...300 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||||||
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mmbt4401 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.25W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 250MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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MMBT4403 | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 100...300 Mounting: SMD Frequency: 200MHz |
на замовлення 4250 шт: термін постачання 14-30 дні (днів) |
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MMBT5401 | LUGUANG ELECTRONIC |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 150V; 0.5A; 0.35W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23 Current gain: 60...240 Mounting: SMD Frequency: 100MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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MMBT5551 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.35W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.35W Case: SOT23 Current gain: 80...250 Mounting: SMD Frequency: 100...300MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. |
| LGEA1117-3.3 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
на замовлення 950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 14.59 грн |
| 50+ | 8.70 грн |
| 100+ | 7.20 грн |
| 500+ | 6.11 грн |
| LGEA1117-5.0 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 6.5...12V
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.15V
Operating temperature: 0...125°C
Output voltage: 5V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 6.5...12V
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.15V
Operating temperature: 0...125°C
Output voltage: 5V
Kind of package: reel; tape
Case: SOT89
Number of channels: 1
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 14.59 грн |
| 50+ | 8.63 грн |
| 100+ | 7.26 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.77 грн |
| LGEA1117-ADJ |
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Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
на замовлення 920 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 13.31 грн |
| 55+ | 7.92 грн |
| 100+ | 6.65 грн |
| 500+ | 5.62 грн |
| LGEGB15N65T2 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 558 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.05 грн |
| 10+ | 42.58 грн |
| 25+ | 37.92 грн |
| 100+ | 35.13 грн |
| 400+ | 33.01 грн |
| LGEGF15N65T2 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.05 грн |
| 10+ | 42.33 грн |
| 12+ | 37.67 грн |
| LGEGP15N65T2 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 125W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 150ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 124 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.05 грн |
| 10+ | 42.33 грн |
| 12+ | 37.92 грн |
| 50+ | 35.13 грн |
| LGEGW100N65FP |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247PLUS
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Collector current: 100A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
Turn-on time: 205ns
Turn-off time: 375ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247PLUS
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Collector current: 100A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
Turn-on time: 205ns
Turn-off time: 375ns
Gate-emitter voltage: ±20V
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.67 грн |
| 3+ | 390.24 грн |
| 10+ | 346.22 грн |
| 30+ | 320.83 грн |
| LGEGW15N120TS |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 245ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 245ns
на замовлення 337 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.07 грн |
| 4+ | 128.67 грн |
| 10+ | 114.28 грн |
| 30+ | 105.81 грн |
| 120+ | 99.04 грн |
| 240+ | 96.50 грн |
| LGEGW20N65SEK |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 80A
Turn-on time: 74ns
Turn-off time: 232ns
Gate charge: 82nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 80A
Turn-on time: 74ns
Turn-off time: 232ns
Gate charge: 82nC
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.07 грн |
| 4+ | 128.67 грн |
| 10+ | 114.28 грн |
| 30+ | 106.66 грн |
| 120+ | 99.04 грн |
| LGEGW25N120S |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
Turn-on time: 57ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
Turn-on time: 57ns
на замовлення 71 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.91 грн |
| 10+ | 136.29 грн |
| 30+ | 126.98 грн |
| LGEGW40N120F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 503ns
Turn-on time: 134ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 503ns
Turn-on time: 134ns
на замовлення 130 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 309.04 грн |
| 3+ | 258.19 грн |
| 10+ | 228.56 грн |
| 30+ | 211.63 грн |
| 120+ | 198.08 грн |
| LGEGW40N120F2 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 270ns
Turn-on time: 135ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 270ns
Turn-on time: 135ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 318.16 грн |
| 3+ | 264.96 грн |
| 10+ | 235.33 грн |
| 30+ | 217.55 грн |
| 120+ | 204.01 грн |
| LGEGW40N120TS |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 310ns
Turn-on time: 121ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 310ns
Turn-on time: 121ns
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 309.04 грн |
| 3+ | 258.19 грн |
| 10+ | 228.56 грн |
| 30+ | 211.63 грн |
| LGEGW40N65F1 |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Turn-off time: 187ns
Gate charge: 83nC
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 96ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Kind of package: tube
Turn-off time: 187ns
Gate charge: 83nC
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 96ns
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.53 грн |
| 4+ | 132.90 грн |
| 10+ | 118.51 грн |
| 30+ | 110.05 грн |
| 120+ | 102.43 грн |
| 240+ | 99.89 грн |
| LGEGW60N65SEU |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 151W
Gate charge: 0.21µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 240A
Turn-on time: 123ns
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 151W
Gate charge: 0.21µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 240A
Turn-on time: 123ns
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Collector current: 60A
Collector-emitter voltage: 650V
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 187.08 грн |
| 10+ | 165.92 грн |
| 30+ | 153.22 грн |
| LGEGW75N65F |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 71W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-on time: 161ns
Turn-off time: 274ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 71W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-on time: 161ns
Turn-off time: 274ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 114 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.16 грн |
| 3+ | 240.41 грн |
| 10+ | 212.47 грн |
| 30+ | 198.08 грн |
| LGEGW75N65FP |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 500W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 215ns
Turn-off time: 225ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 500W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 215ns
Turn-off time: 225ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 139 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 294.46 грн |
| 3+ | 247.18 грн |
| 10+ | 217.55 грн |
| 30+ | 203.16 грн |
| 120+ | 189.62 грн |
| LGEGW75N65S |
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Виробник: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 156ns
Turn-off time: 348ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 156ns
Turn-off time: 348ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 287.16 грн |
| 3+ | 240.41 грн |
| 10+ | 212.47 грн |
| 30+ | 198.08 грн |
| LGET1117-1.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| LGET1117-1.8 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| LGET1117-3.3 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
на замовлення 2003 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 13.49 грн |
| 55+ | 7.99 грн |
| 100+ | 6.67 грн |
| 500+ | 5.64 грн |
| 1000+ | 5.32 грн |
| 2000+ | 4.80 грн |
| LGET1117-5.0 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 6.5...12V
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.15V
Operating temperature: 0...125°C
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 6.5...12V
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.15V
Operating temperature: 0...125°C
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
на замовлення 3598 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 14.77 грн |
| 50+ | 8.80 грн |
| 100+ | 7.32 грн |
| 500+ | 6.23 грн |
| 1000+ | 5.85 грн |
| 2000+ | 5.28 грн |
| LGET1117-ADJ |
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Виробник: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
на замовлення 2946 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 14.40 грн |
| 50+ | 8.60 грн |
| 100+ | 7.17 грн |
| 500+ | 6.09 грн |
| 1000+ | 5.71 грн |
| 2000+ | 5.16 грн |
| LL4148 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 9272 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.94 грн |
| 107+ | 3.98 грн |
| 172+ | 2.47 грн |
| 268+ | 1.58 грн |
| 407+ | 1.04 грн |
| 500+ | 0.93 грн |
| 1000+ | 0.89 грн |
| LL4150 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; MiniMELF glass; Ifsm: 1A
Mounting: SMD
Max. forward impulse current: 1A
Max. off-state voltage: 50V
Load current: 0.4A
Max. load current: 0.6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MiniMELF glass
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; MiniMELF glass; Ifsm: 1A
Mounting: SMD
Max. forward impulse current: 1A
Max. off-state voltage: 50V
Load current: 0.4A
Max. load current: 0.6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MiniMELF glass
Type of diode: switching
на замовлення 13125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 265+ | 1.73 грн |
| 405+ | 1.05 грн |
| 500+ | 0.92 грн |
| 2500+ | 0.83 грн |
| 10000+ | 0.77 грн |
| LL4151 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.3A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.3A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Kind of package: reel; tape
на замовлення 10665 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 530+ | 0.87 грн |
| 535+ | 0.80 грн |
| 560+ | 0.76 грн |
| LL4448 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 2.54 грн |
| M4 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 565 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 5.29 грн |
| 350+ | 1.24 грн |
| 500+ | 0.93 грн |
| M6 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
на замовлення 78 шт:
термін постачання 14-30 дні (днів)
| MB05F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 8804 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.83 грн |
| 140+ | 3.12 грн |
| 250+ | 2.81 грн |
| 1000+ | 2.48 грн |
| 5000+ | 2.45 грн |
| MB05S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 6563 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.76 грн |
| 75+ | 5.69 грн |
| 145+ | 2.99 грн |
| 500+ | 2.69 грн |
| 3000+ | 2.38 грн |
| MB10F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2324 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.93 грн |
| 135+ | 3.16 грн |
| 250+ | 2.84 грн |
| 1000+ | 2.51 грн |
| MB10M |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
на замовлення 5012 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 10.76 грн |
| 100+ | 4.33 грн |
| 110+ | 3.91 грн |
| 500+ | 3.45 грн |
| 2500+ | 3.40 грн |
| MB10S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.93 грн |
| 125+ | 3.40 грн |
| 250+ | 3.06 грн |
| 1000+ | 2.70 грн |
| 3000+ | 2.67 грн |
| MB2F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 8000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 6.02 грн |
| 135+ | 3.17 грн |
| 250+ | 2.86 грн |
| 1000+ | 2.52 грн |
| 5000+ | 2.51 грн |
| MB2S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2230 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 5.83 грн |
| 130+ | 3.32 грн |
| 250+ | 2.99 грн |
| 1000+ | 2.64 грн |
| MB4S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 2835 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 6.47 грн |
| 130+ | 3.28 грн |
| 250+ | 2.95 грн |
| 1000+ | 2.60 грн |
| MB6F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1070 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.84 грн |
| 125+ | 3.50 грн |
| 250+ | 3.16 грн |
| 1000+ | 2.79 грн |
| MB6M |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
на замовлення 3428 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 12.03 грн |
| 90+ | 4.88 грн |
| 100+ | 4.40 грн |
| 500+ | 3.89 грн |
| 2500+ | 3.86 грн |
| MB6S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 70600 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.20 грн |
| 105+ | 4.06 грн |
| 161+ | 2.64 грн |
| 500+ | 2.36 грн |
| 1000+ | 2.29 грн |
| MB8S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| MCR100-6 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 400V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward voltage: 1.7V
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 400V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.4kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward voltage: 1.7V
Features of semiconductor devices: sensitive gate
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| MCR100-6S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Max. forward impulse current: 10A
Kind of package: reel; tape
Max. forward voltage: 1.35V
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Max. forward impulse current: 10A
Kind of package: reel; tape
Max. forward voltage: 1.35V
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| MCR100-8 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 600V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward voltage: 1.7V
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 600V; Ifmax: 0.8A; Igt: 0.2mA; TO92; THT
Type of thyristor: standard
Max. off-state voltage: 0.6kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: TO92
Mounting: THT
Kind of package: bulk
Max. forward voltage: 1.7V
Features of semiconductor devices: sensitive gate
на замовлення 5192 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.93 грн |
| 15+ | 28.27 грн |
| 25+ | 20.28 грн |
| 100+ | 14.22 грн |
| 250+ | 10.18 грн |
| 500+ | 9.18 грн |
| 1000+ | 7.78 грн |
| 4000+ | 5.65 грн |
| MCR100-8S |
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Виробник: LUGUANG ELECTRONIC
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Max. forward impulse current: 10A
Kind of package: reel; tape
Max. forward voltage: 1.35V
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor: standard; Urmax: 800V; Ifmax: 0.8A; Igt: 0.2mA; SOT23; SMD
Type of thyristor: standard
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Gate current: 0.2mA
Case: SOT23
Mounting: SMD
Max. forward impulse current: 10A
Kind of package: reel; tape
Max. forward voltage: 1.35V
Features of semiconductor devices: sensitive gate
товару немає в наявності
В кошику
од. на суму грн.
| MDC100A-08 |
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Виробник: LUGUANG ELECTRONIC
Category: Diode modules
Description: Module: diode; double series; 800V; If: 100A; M01H; Ufmax: 1.45V
Max. forward impulse current: 2.6kA
Max. forward voltage: 1.45V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 100A
Max. load current: 157A
Semiconductor structure: double series
Case: M01H
Category: Diode modules
Description: Module: diode; double series; 800V; If: 100A; M01H; Ufmax: 1.45V
Max. forward impulse current: 2.6kA
Max. forward voltage: 1.45V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.8kV
Electrical mounting: screw
Load current: 100A
Max. load current: 157A
Semiconductor structure: double series
Case: M01H
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2645.54 грн |
| 3+ | 2171.30 грн |
| MDK46-18 |
Виробник: LUGUANG ELECTRONIC
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 46A; M01H; screw
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.8kV
Load current: 46A
Case: M01H
Max. forward voltage: 1.45V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 72A
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 46A; M01H; screw
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.8kV
Load current: 46A
Case: M01H
Max. forward voltage: 1.45V
Max. forward impulse current: 1.3kA
Electrical mounting: screw
Max. load current: 72A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4168.87 грн |
| 3+ | 3419.91 грн |
| MJD112 TO251 THT |
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Виробник: LUGUANG ELECTRONIC
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO251
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO251
Current gain: 200...12000
Mounting: THT
Kind of package: tube
Frequency: 25MHz
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO251
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO251
Current gain: 200...12000
Mounting: THT
Kind of package: tube
Frequency: 25MHz
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| MJD112 TO252 SMD |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO252
Mounting: SMD
Frequency: 25MHz
Current gain: 200...12000
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1W; TO252
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1W
Case: TO252
Mounting: SMD
Frequency: 25MHz
Current gain: 200...12000
на замовлення 3718 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 17.32 грн |
| 45+ | 9.73 грн |
| MJD122 TO252 SMD |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Power dissipation: 1.5W
Type of transistor: NPN
Current gain: 100...12000
Case: TO252
Collector current: 8A
Mounting: SMD
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Power dissipation: 1.5W
Type of transistor: NPN
Current gain: 100...12000
Case: TO252
Collector current: 8A
Mounting: SMD
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 487 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 17.14 грн |
| 40+ | 11.68 грн |
| 100+ | 10.50 грн |
| MJD127 TO252 SMD |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Power dissipation: 1.5W
Type of transistor: PNP
Current gain: 100...12000
Kind of package: reel; tape
Case: TO252
Collector current: 8A
Mounting: SMD
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.5W; TO252
Power dissipation: 1.5W
Type of transistor: PNP
Current gain: 100...12000
Kind of package: reel; tape
Case: TO252
Collector current: 8A
Mounting: SMD
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 2009 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.41 грн |
| 40+ | 11.94 грн |
| 100+ | 10.75 грн |
| 500+ | 9.57 грн |
| MMBT2222A |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MMBT2907A |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MMBT3904 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 300MHz
Pulsed collector current: 0.2A
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MMBT3906 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 0.25W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MMBT3906T |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SOT523
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SOT523
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| mmbt4401 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.25W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 250MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MMBT4403 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100...300
Mounting: SMD
Frequency: 200MHz
на замовлення 4250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 2.59 грн |
| 350+ | 1.21 грн |
| 500+ | 1.10 грн |
| 3000+ | 0.97 грн |
| MMBT5401 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.35W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 60...240
Mounting: SMD
Frequency: 100MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| MMBT5551 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 80...250
Mounting: SMD
Frequency: 100...300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23
Current gain: 80...250
Mounting: SMD
Frequency: 100...300MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
































