Продукція > LUGUANG ELECTRONIC > Всі товари виробника LUGUANG ELECTRONIC (1233) > Сторінка 14 з 21
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| HER207 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 2A; Ifsm: 60A; DO15; tape; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 60A Case: DO15 Kind of package: tape Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER208 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 2A; Ifsm: 60A; DO15; tape; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 60A Case: DO15 Kind of package: tape Max. forward voltage: 1.7V |
на замовлення 2969 шт: термін постачання 14-30 дні (днів) |
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| HER303 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD; tape; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD Kind of package: tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER307 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; Ifsm: 125A; DO201AD; tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD Kind of package: tape Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER308 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 125A Case: DO201AD Kind of package: tape Max. forward voltage: 1.7V |
на замовлення 1249 шт: термін постачання 14-30 дні (днів) |
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| HER502 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER503 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER504 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER505 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER506 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER507 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER508 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1.7V |
на замовлення 1250 шт: термін постачання 14-30 дні (днів) |
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| HER602 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: R6 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER602S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER603 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: R6 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER603S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER604 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 6A Semiconductor structure: single diode Case: R6 Max. forward voltage: 1.3V Kind of package: tape Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER604S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 6A Semiconductor structure: single diode Case: DO27 Max. forward voltage: 1.3V Kind of package: tape Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER605 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: R6 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER605S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.3V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER606 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.7V Load current: 6A Kind of package: tape Semiconductor structure: single diode Case: R6 Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1.7V Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER606S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V Load current: 6A Kind of package: tape Semiconductor structure: single diode Case: DO27 Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1.7V Max. off-state voltage: 0.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER607 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: R6 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| HER607S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 6A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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HER608 | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 200A Case: R6 Kind of package: tape Max. forward voltage: 1.7V |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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HER608S | LUGUANG ELECTRONIC |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: tape Max. forward voltage: 1.7V |
на замовлення 495 шт: термін постачання 14-30 дні (днів) |
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| KBJ2B | LUGUANG ELECTRONIC |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 50A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 2A Max. forward impulse current: 50A Version: flat Case: KBJ2 Electrical mounting: THT Max. forward voltage: 1V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
| KBJ2G | LUGUANG ELECTRONIC |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 2A Max. forward impulse current: 50A Version: flat Case: KBJ2 Electrical mounting: THT Max. forward voltage: 1V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
| KBJ2M | LUGUANG ELECTRONIC |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 50A Version: flat Case: KBJ2 Electrical mounting: THT Max. forward voltage: 1V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | |||||||||||||||
| KBP06 | LUGUANG ELECTRONIC |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 2A Max. forward impulse current: 50A Version: flat Case: KBP Electrical mounting: THT Max. forward voltage: 1.1V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| KBP08 | LUGUANG ELECTRONIC |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 50A Version: flat Case: KBP Electrical mounting: THT Max. forward voltage: 1.1V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
| KBP10 | LUGUANG ELECTRONIC |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 2A Max. forward impulse current: 50A Version: flat Case: KBP Electrical mounting: THT Max. forward voltage: 1.1V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||
| KTA1273 | LUGUANG ELECTRONIC |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92L Mounting: THT Type of transistor: PNP Current gain: 100...320 Case: TO92L Frequency: 120MHz Collector current: 2A Collector-emitter voltage: 30V Power dissipation: 1W Polarisation: bipolar |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||
| KTA1281 | LUGUANG ELECTRONIC |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92L Frequency: 100MHz Collector current: 2A Mounting: THT Collector-emitter voltage: 50V Power dissipation: 1W Polarisation: bipolar Type of transistor: PNP Current gain: 70...240 Case: TO92L |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||
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KTA1664 | LUGUANG ELECTRONIC |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.8A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.8A Power dissipation: 1W Case: SOT89 Current gain: 160...320 Mounting: SMD Frequency: 120MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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KTA1664-Y | LUGUANG ELECTRONIC |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.8A; 1W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.8A Power dissipation: 1W Case: SOT89 Current gain: 160...320 Mounting: SMD Frequency: 120MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||
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KTA1A80 | LUGUANG ELECTRONIC |
Category: Triacs Description: Triac; 800V; 1A; SOT89; Igt: 5mA; Ufmax: 1.6V Kind of package: reel; tape Case: SOT89 Type of thyristor: triac Mounting: SMD Gate current: 5mA Max. forward voltage: 1.6V Max. off-state voltage: 0.8kV Max. load current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KTC3875 | LUGUANG ELECTRONIC |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.15W Case: SOT23 Current gain: 70...700 Mounting: SMD Frequency: 80MHz |
на замовлення 2140 шт: термін постачання 14-30 дні (днів) |
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LGE2300 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23 On-state resistance: 32mΩ Mounting: SMD Power dissipation: 1.25W Gate charge: 11nC Polarisation: unipolar Drain current: 4A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 |
на замовлення 8940 шт: термін постачання 14-30 дні (днів) |
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LGE2301 | LUGUANG ELECTRONIC |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 12nC |
на замовлення 3025 шт: термін постачання 14-30 дні (днів) |
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LGE2302 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.115Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 10nC |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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LGE2304 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 6.7nC |
на замовлення 5477 шт: термін постачання 14-30 дні (днів) |
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LGE2305 | LUGUANG ELECTRONIC |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 7.8nC |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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LGE2312 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Kind of package: reel; tape On-state resistance: 31mΩ Polarisation: unipolar Drain current: 4.9A |
на замовлення 1790 шт: термін постачання 14-30 дні (днів) |
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LGE3D02120F | LUGUANG ELECTRONIC |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape Type of diode: Schottky rectifying Case: DPAK Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 1.9V Max. forward impulse current: 24A Kind of package: reel; tape Leakage current: 10µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| LGE3D05120A | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ufmax: 2V Type of diode: Schottky rectifying Case: TO220-2 Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 2V Max. forward impulse current: 55A Kind of package: tube Leakage current: 11µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D15065A | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.7V Max. forward impulse current: 135A Leakage current: 10µA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20065A | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 250uA Case: TO220-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Leakage current: 0.25mA Max. forward voltage: 1.7V Load current: 20A Max. load current: 100A Max. forward impulse current: 110A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20065D | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Leakage current: 10µA Max. forward voltage: 1.65V Load current: 10A x2 Max. forward impulse current: 160A Max. off-state voltage: 650V Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20065H | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Leakage current: 0.25mA Max. forward voltage: 1.7V Load current: 20A Max. load current: 100A Max. forward impulse current: 110A Max. off-state voltage: 650V Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120A | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 2.2V Max. forward impulse current: 160A Kind of package: tube Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120D | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 2V Max. forward impulse current: 160A Kind of package: tube Leakage current: 30µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20120H | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. load current: 100A Max. forward impulse current: 130A Kind of package: tube Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3D20170H | LUGUANG ELECTRONIC |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.7kV; 20A; TO247-2; Ir: 50uA Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Leakage current: 50µA Max. forward voltage: 2.3V Load current: 20A Max. load current: 140A Max. forward impulse current: 190A Max. off-state voltage: 1.7kV Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3M1K170B | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.5A Power dissipation: 69W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 1.5Ω Mounting: THT Gate charge: 21.8nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3M20120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 71A Power dissipation: 428W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 39mΩ Mounting: THT Gate charge: 254nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3M45170B | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Technology: SiC Case: TO247-3 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 54nC On-state resistance: 90mΩ Drain current: 48A Pulsed drain current: 160A Power dissipation: 520W Drain-source voltage: 1.7kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| LGE3M45170Q | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W Kind of channel: enhancement Mounting: THT Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Case: TO247-4 Kind of package: tube Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 54nC On-state resistance: 90mΩ Drain current: 48A Pulsed drain current: 160A Power dissipation: 520W Drain-source voltage: 1.7kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
LGEA1117-1.5 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3...10V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||
|
LGEA1117-1.8 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 1.8V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 3.2...10V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
| HER207 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 60A; DO15; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Case: DO15
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 60A; DO15; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Case: DO15
Kind of package: tape
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER208 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 60A; DO15; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Case: DO15
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 60A; DO15; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 60A
Case: DO15
Kind of package: tape
Max. forward voltage: 1.7V
на замовлення 2969 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 32+ | 13.41 грн |
| 100+ | 8.09 грн |
| 500+ | 4.55 грн |
| 1000+ | 2.76 грн |
| HER303 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 125A; DO201AD; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER307 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 125A; DO201AD; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 125A; DO201AD; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER308 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 125A; DO201AD; tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 125A
Case: DO201AD
Kind of package: tape
Max. forward voltage: 1.7V
на замовлення 1249 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.20 грн |
| 20+ | 22.09 грн |
| 35+ | 12.39 грн |
| 100+ | 7.52 грн |
| 250+ | 4.86 грн |
| 500+ | 4.26 грн |
| HER502 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER503 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER504 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.3V
товару немає в наявності
В кошику
од. на суму грн.
| HER505 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.3V
товару немає в наявності
В кошику
од. на суму грн.
| HER506 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER507 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
товару немає в наявності
В кошику
од. на суму грн.
| HER508 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
на замовлення 1250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.49 грн |
| 17+ | 25.99 грн |
| 30+ | 14.53 грн |
| 100+ | 8.82 грн |
| 250+ | 5.71 грн |
| 500+ | 4.99 грн |
| 1250+ | 4.48 грн |
| HER602 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER602S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER603 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER603S |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
| HER604 |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 1.3V
Kind of package: tape
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 1.3V
Kind of package: tape
Max. forward impulse current: 200A
товару немає в наявності
В кошику
од. на суму грн.
| HER604S |
![]() |
Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 1.3V
Kind of package: tape
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Case: DO27
Max. forward voltage: 1.3V
Kind of package: tape
Max. forward impulse current: 200A
товару немає в наявності
В кошику
од. на суму грн.
| HER605 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
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| HER605S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
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| HER606 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.7V
Load current: 6A
Kind of package: tape
Semiconductor structure: single diode
Case: R6
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.7V
Load current: 6A
Kind of package: tape
Semiconductor structure: single diode
Case: R6
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.6kV
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| HER606S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Load current: 6A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.6kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Load current: 6A
Kind of package: tape
Semiconductor structure: single diode
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1.7V
Max. off-state voltage: 0.6kV
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| HER607 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
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| HER607S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
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| HER608 |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: R6
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; R6; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: R6
Kind of package: tape
Max. forward voltage: 1.7V
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 42.33 грн |
| HER608S |
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Виробник: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; Ifsm: 200A; DO27; tape; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: tape
Max. forward voltage: 1.7V
на замовлення 495 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.23 грн |
| 16+ | 27.68 грн |
| 28+ | 15.49 грн |
| 100+ | 9.40 грн |
| 250+ | 6.09 грн |
| KBJ2B |
Виробник: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBJ2
Electrical mounting: THT
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBJ2
Electrical mounting: THT
Max. forward voltage: 1V
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Мінімальне замовлення: 3 шт
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| KBJ2G |
Виробник: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBJ2
Electrical mounting: THT
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBJ2
Electrical mounting: THT
Max. forward voltage: 1V
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Мінімальне замовлення: 3 шт
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| KBJ2M |
Виробник: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBJ2
Electrical mounting: THT
Max. forward voltage: 1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBJ2
Electrical mounting: THT
Max. forward voltage: 1V
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Мінімальне замовлення: 3 шт
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| KBP06 |
Виробник: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
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Мінімальне замовлення: 5000 шт
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| KBP08 |
Виробник: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
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Мінімальне замовлення: 5 шт
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| KBP10 |
Виробник: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
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Мінімальне замовлення: 5 шт
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| KTA1273 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92L
Mounting: THT
Type of transistor: PNP
Current gain: 100...320
Case: TO92L
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Power dissipation: 1W
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92L
Mounting: THT
Type of transistor: PNP
Current gain: 100...320
Case: TO92L
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Power dissipation: 1W
Polarisation: bipolar
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Мінімальне замовлення: 10 шт
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| KTA1281 |
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Виробник: LUGUANG ELECTRONIC
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92L
Frequency: 100MHz
Collector current: 2A
Mounting: THT
Collector-emitter voltage: 50V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 70...240
Case: TO92L
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92L
Frequency: 100MHz
Collector current: 2A
Mounting: THT
Collector-emitter voltage: 50V
Power dissipation: 1W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 70...240
Case: TO92L
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Мінімальне замовлення: 10 шт
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| KTA1664 |
Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.8A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT89
Current gain: 160...320
Mounting: SMD
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.8A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT89
Current gain: 160...320
Mounting: SMD
Frequency: 120MHz
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Мінімальне замовлення: 10 шт
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| KTA1664-Y |
Виробник: LUGUANG ELECTRONIC
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.8A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT89
Current gain: 160...320
Mounting: SMD
Frequency: 120MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.8A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.8A
Power dissipation: 1W
Case: SOT89
Current gain: 160...320
Mounting: SMD
Frequency: 120MHz
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Мінімальне замовлення: 10 шт
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| KTA1A80 |
Виробник: LUGUANG ELECTRONIC
Category: Triacs
Description: Triac; 800V; 1A; SOT89; Igt: 5mA; Ufmax: 1.6V
Kind of package: reel; tape
Case: SOT89
Type of thyristor: triac
Mounting: SMD
Gate current: 5mA
Max. forward voltage: 1.6V
Max. off-state voltage: 0.8kV
Max. load current: 1A
Category: Triacs
Description: Triac; 800V; 1A; SOT89; Igt: 5mA; Ufmax: 1.6V
Kind of package: reel; tape
Case: SOT89
Type of thyristor: triac
Mounting: SMD
Gate current: 5mA
Max. forward voltage: 1.6V
Max. off-state voltage: 0.8kV
Max. load current: 1A
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| KTC3875 |
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Виробник: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
на замовлення 2140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 80+ | 6.38 грн |
| 120+ | 3.67 грн |
| 250+ | 3.30 грн |
| 1000+ | 2.92 грн |
| LGE2300 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
On-state resistance: 32mΩ
Mounting: SMD
Power dissipation: 1.25W
Gate charge: 11nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
On-state resistance: 32mΩ
Mounting: SMD
Power dissipation: 1.25W
Gate charge: 11nC
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
на замовлення 8940 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 3.15 грн |
| 180+ | 2.61 грн |
| 500+ | 2.30 грн |
| 3000+ | 2.12 грн |
| LGE2301 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
на замовлення 3025 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 135+ | 3.46 грн |
| 160+ | 2.66 грн |
| 500+ | 2.34 грн |
| 3000+ | 2.23 грн |
| LGE2302 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10nC
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.78 грн |
| 145+ | 2.95 грн |
| 500+ | 2.66 грн |
| 3000+ | 2.34 грн |
| LGE2304 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.7nC
на замовлення 5477 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 130+ | 3.51 грн |
| 145+ | 2.96 грн |
| 500+ | 2.67 грн |
| 3000+ | 2.36 грн |
| LGE2305 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.8nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.8nC
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 14.39 грн |
| LGE2312 |
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Виробник: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 31mΩ
Polarisation: unipolar
Drain current: 4.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 31mΩ
Polarisation: unipolar
Drain current: 4.9A
на замовлення 1790 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.66 грн |
| 95+ | 4.50 грн |
| 250+ | 4.05 грн |
| 1000+ | 3.57 грн |
| LGE3D02120F |
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Виробник: LUGUANG ELECTRONIC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 24A
Kind of package: reel; tape
Leakage current: 10µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 24A
Kind of package: reel; tape
Leakage current: 10µA
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| LGE3D05120A |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 55A
Kind of package: tube
Leakage current: 11µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 55A
Kind of package: tube
Leakage current: 11µA
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| LGE3D15065A |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 135A
Leakage current: 10µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 135A
Leakage current: 10µA
Kind of package: tube
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| LGE3D20065A |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 250uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 250uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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| LGE3D20065D |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.65V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.65V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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| LGE3D20065H |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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| LGE3D20120A |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
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| LGE3D20120D |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
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| LGE3D20120H |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 100A
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 100A
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
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| LGE3D20170H |
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Виробник: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 20A; TO247-2; Ir: 50uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.3V
Load current: 20A
Max. load current: 140A
Max. forward impulse current: 190A
Max. off-state voltage: 1.7kV
Semiconductor structure: single diode
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 20A; TO247-2; Ir: 50uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.3V
Load current: 20A
Max. load current: 140A
Max. forward impulse current: 190A
Max. off-state voltage: 1.7kV
Semiconductor structure: single diode
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| LGE3M1K170B |
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Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 6A
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| LGE3M20120Q |
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Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Power dissipation: 428W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Power dissipation: 428W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| LGE3M45170B |
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Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
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| LGE3M45170Q |
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Виробник: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
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| LGEA1117-1.5 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
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| LGEA1117-1.8 |
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Виробник: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
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Мінімальне замовлення: 5 шт
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