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SF68G-BP SF68G-BP MCC (Micro Commercial Components) SF61G_SF68G(DO-201AD).pdf Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SF68G-AP SF68G-AP MCC (Micro Commercial Components) SF61G_SF68G(DO-201AD).pdf Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SF68G-TP SF68G-TP MCC (Micro Commercial Components) SF61G_SF68G(DO-201AD).pdf Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MSJU06N80A-TP MSJU06N80A-TP MCC (Micro Commercial Components) MSJU06N80A(DPAK).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.8A, 10V
Power Dissipation (Max): 56.8W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 25 V
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SMCJ1.5KE9.1AQ-TP SMCJ1.5KE9.1AQ-TP MCC (Micro Commercial Components) SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf Description: TVS DIODE 7.8VWM 13.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 111.9A
Voltage - Reverse Standoff (Typ): 7.8V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJP6KE22CAQ-TP SMBJP6KE22CAQ-TP MCC (Micro Commercial Components) SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf Description: TVS DIODE 18.8VWM 30.6V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TBSA60M-TP TBSA60M-TP MCC (Micro Commercial Components) TBSA60M(TBSG).pdf Description: BRIDGE RECT 1PHASE 1KV 6A TBSG
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+13.12 грн
Мінімальне замовлення: 2500
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TBSA60M-TP TBSA60M-TP MCC (Micro Commercial Components) TBSA60M(TBSG).pdf Description: BRIDGE RECT 1PHASE 1KV 6A TBSG
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4374 шт:
термін постачання 21-31 дні (днів)
7+53.46 грн
10+31.92 грн
100+20.60 грн
500+14.74 грн
1000+13.26 грн
Мінімальне замовлення: 7
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3GBJ3516-BP-HF 3GBJ3516-BP-HF MCC (Micro Commercial Components) 3GBJ3508_3GBJ3516(TSB-5).pdf Description: BRIDGE RECT 3P 1.6KV 35A TSB-5
Packaging: Tape & Reel (TR)
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MCT1117C-ADJ-TP MCT1117C-ADJ-TP MCC (Micro Commercial Components) MCT1117C(SOT-223).pdf Description: IC REG LINEAR POS ADJ 1A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 1.25V
PSRR: 60dB ~ 62dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Temperature
на замовлення 2428 шт:
термін постачання 21-31 дні (днів)
25+13.16 грн
37+8.79 грн
41+7.73 грн
100+6.19 грн
250+5.68 грн
500+5.36 грн
1000+5.02 грн
Мінімальне замовлення: 25
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MUR160GP-TP MUR160GP-TP MCC (Micro Commercial Components) MUR105GP-MUR160GP(DO-41).pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+3.50 грн
Мінімальне замовлення: 5000
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MJD32CHE3-TP MJD32CHE3-TP MCC (Micro Commercial Components) MJD32CHE3(DPAK).pdf Description: TRANS PNP 100V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
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DDTC143ECA-TP DDTC143ECA-TP MCC (Micro Commercial Components) DDTC143ECA(SOT-23).pdf Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.53 грн
Мінімальне замовлення: 3000
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DDTC143ECA-TP DDTC143ECA-TP MCC (Micro Commercial Components) DDTC143ECA(SOT-23).pdf Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)
15+22.21 грн
25+12.83 грн
100+8.03 грн
500+5.55 грн
1000+4.91 грн
Мінімальне замовлення: 15
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P6KE91A-BP P6KE91A-BP MCC (Micro Commercial Components) P6KE6.8(A)-P6KE600(A)(DO-15).pdf Description: TVS DIODE 77.8VWM 125VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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SMAJ58CAQ-TP SMAJ58CAQ-TP MCC (Micro Commercial Components) SMAJ5.0AQ_SMAJ190CAQ(SMA).pdf Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MCAC1D4N04YL-TP MCAC1D4N04YL-TP MCC (Micro Commercial Components) MCAC1D4N04YL(DFN5060).pdf Description: MOSFET N-CH 40 185A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+32.74 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC1D4N04YL-TP MCAC1D4N04YL-TP MCC (Micro Commercial Components) MCAC1D4N04YL(DFN5060).pdf Description: MOSFET N-CH 40 185A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
на замовлення 9977 шт:
термін постачання 21-31 дні (днів)
4+106.09 грн
10+67.95 грн
100+48.34 грн
500+35.76 грн
1000+32.74 грн
2000+32.24 грн
Мінімальне замовлення: 4
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15KP200CAL-TP 15KP200CAL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 200VWM 322VC R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+174.08 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
15KP200CAL-TP 15KP200CAL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 200VWM 322VC R-6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
1+430.94 грн
10+278.29 грн
100+200.71 грн
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SICW025N120H4-BP SICW025N120H4-BP MCC (Micro Commercial Components) SICW025N120H4(TO-247-4).pdf Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
1+1217.99 грн
10+832.34 грн
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SICW025N120H-BP SICW025N120H-BP MCC (Micro Commercial Components) SICW025N120H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
на замовлення 356 шт:
термін постачання 21-31 дні (днів)
1+1210.59 грн
10+826.80 грн
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SB250-AP SB250-AP MCC (Micro Commercial Components) SB220-SB260(DO-15).pdf Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SB250-TP SB250-TP MCC (Micro Commercial Components) SB220-SB260(DO-15).pdf Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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P4KE120CA-BP P4KE120CA-BP MCC (Micro Commercial Components) P4KE6.8A_P4KE550A(DO-41).pdf Description: TVS DIODE 102VWM 165VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120A-BP P4KE120A-BP MCC (Micro Commercial Components) P4KE6.8A_P4KE550A(DO-41).pdf Description: TVS DIODE 102VWM 165VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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MCAC30P03-TP MCAC30P03-TP MCC (Micro Commercial Components) MCAC30P03(DFN5060).pdf Description: MOSFET P-CH 30 30A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
5000+11.10 грн
Мінімальне замовлення: 5000
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MCAC30P03-TP MCAC30P03-TP MCC (Micro Commercial Components) MCAC30P03(DFN5060).pdf Description: MOSFET P-CH 30 30A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
7+51.81 грн
11+30.57 грн
100+19.63 грн
500+13.98 грн
1000+12.55 грн
2000+11.34 грн
Мінімальне замовлення: 7
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MCU30P03-TP MCU30P03-TP MCC (Micro Commercial Components) MCU30P03(DPAK).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1719 pF @ 25 V
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SICW040N120H-BP SICW040N120H-BP MCC (Micro Commercial Components) SICW040N120H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
1+858.60 грн
10+575.35 грн
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GS1MFLHE3-TP GS1MFLHE3-TP MCC (Micro Commercial Components) GS1MFLHE3(DO-221AC).pdf Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
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GBUA10M-BP GBUA10M-BP MCC (Micro Commercial Components) GBUA10M(JC).pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4948 шт:
термін постачання 21-31 дні (днів)
6+61.68 грн
10+39.44 грн
100+30.25 грн
500+24.95 грн
1000+21.60 грн
2000+20.47 грн
Мінімальне замовлення: 6
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B5819P1L-TP B5819P1L-TP MCC (Micro Commercial Components) B5819P1L(DFN1608-2).pdf Description: DIODE SCHOTTKY 40V 1A DFN16082
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608-2
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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SMBJP6KE220CAQ-TP SMBJP6KE220CAQ-TP MCC (Micro Commercial Components) SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SI2310K-TP SI2310K-TP MCC (Micro Commercial Components) SI2310K(SOT-23).pdf Description: SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
на замовлення 29980 шт:
термін постачання 21-31 дні (днів)
12+28.78 грн
19+17.26 грн
100+10.83 грн
500+7.56 грн
1000+6.71 грн
Мінімальне замовлення: 12
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15KP58AL-TP 15KP58AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 58VWM 94VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 94V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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15KP54AL-TP 15KP54AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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15KP54CAL-TP 15KP54CAL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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SI2302AK-TP SI2302AK-TP MCC (Micro Commercial Components) SI2302AK(SOT-23).pdf Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 10 V
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SI2303K-TP SI2303K-TP MCC (Micro Commercial Components) SI2303K(SOT-23).PDF Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 300mA, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 25 V
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5.0SMLJ180CA-TP 5.0SMLJ180CA-TP MCC (Micro Commercial Components) 5.0SMLJ11A_5.0SMLJ400CA(SMC).pdf Description: TVS DIODE 180VWM 292VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.1A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 292V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMF12CAQ-TP SMF12CAQ-TP MCC (Micro Commercial Components) SMF5.0AQ_SMF100CAQ(SOD-123FL).pdf Description: TVS DIODE 12VWM 19.9VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.05A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SICW060N065H-BP SICW060N065H-BP MCC (Micro Commercial Components) SICW060N065H(TO-247AB).pdf Description: SIC MOSFETS,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SICW060N065H4-BP SICW060N065H4-BP MCC (Micro Commercial Components) SICW060N065H4(TO-247-4).pdf Description: SIC MOSFETS,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SIL04P06YHE3-TP SIL04P06YHE3-TP MCC (Micro Commercial Components) SIL04P06YHE3(SOT23-6L).pdf Description: P-CHANNEL MOSFET,SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+12.76 грн
Мінімальне замовлення: 3000
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SIL04P06YHE3-TP SIL04P06YHE3-TP MCC (Micro Commercial Components) SIL04P06YHE3(SOT23-6L).pdf Description: P-CHANNEL MOSFET,SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3233 шт:
термін постачання 21-31 дні (днів)
7+54.28 грн
10+32.39 грн
100+20.89 грн
500+14.95 грн
1000+13.44 грн
Мінімальне замовлення: 7
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ESD0552P6-TP ESD0552P6-TP MCC (Micro Commercial Components) ESD0552P6(DFN1610-2).pdf Description: TVS DIODE 5VWM 14VC DFN16102
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 160A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 2400W (2.4kW)
Power Line Protection: No
Packaging: Tape & Reel (TR)
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SMAZ24HE3-TP SMAZ24HE3-TP MCC (Micro Commercial Components) SMAZ10HE3~SMAZ39HE3(SMA).pdf Description: DIODE ZENER 24V 1W DO214AC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Qualification: AEC-Q101
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MCTL270N04YHE3-TP MCTL270N04YHE3-TP MCC (Micro Commercial Components) MCTL270N04YHE3(TOLL-8L).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 468W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
Qualification: AEC-Q101
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SL26HL-TP SL26HL-TP MCC (Micro Commercial Components) SL24HL_SL210HL(SOD-123HL).pdf Description: DIODE SCHOTTKY 60V 2A SOD123HL
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 4968 шт:
термін постачання 21-31 дні (днів)
11+30.43 грн
16+20.27 грн
100+10.51 грн
500+7.06 грн
1000+5.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MCTL1D4N10YH-TP MCTL1D4N10YH-TP MCC (Micro Commercial Components) Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10768 pF @ 50 V
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MCTL2D1N10YH-TP MCTL2D1N10YH-TP MCC (Micro Commercial Components) MCTL2D1N10YH(TOLL-8).pdf Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+81.13 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
MCTL2D1N10YH-TP MCTL2D1N10YH-TP MCC (Micro Commercial Components) MCTL2D1N10YH(TOLL-8).pdf Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
на замовлення 3044 шт:
термін постачання 21-31 дні (днів)
2+250.84 грн
10+157.36 грн
100+109.79 грн
500+89.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCTK105N60FH-TP MCTK105N60FH-TP MCC (Micro Commercial Components) MCTK105N60FH(TOLL-8L-KS).pdf Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+125.14 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
MCTK105N60FH-TP MCTK105N60FH-TP MCC (Micro Commercial Components) MCTK105N60FH(TOLL-8L-KS).pdf Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+341.30 грн
10+217.63 грн
100+169.76 грн
500+138.21 грн
1000+136.56 грн
В кошику  од. на суму  грн.
MCTK075N60FH-TP MCTK075N60FH-TP MCC (Micro Commercial Components) MCTK075N60FH(TOLL-8L-KS).pdf Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+181.83 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
MCTK075N60FH-TP MCTK075N60FH-TP MCC (Micro Commercial Components) MCTK075N60FH(TOLL-8L-KS).pdf Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1+424.37 грн
10+296.27 грн
100+239.67 грн
500+195.44 грн
В кошику  од. на суму  грн.
MCQ070N15YH-TP MCQ070N15YH-TP MCC (Micro Commercial Components) MCQ070N15YH(SOP-8).pdf Description: N-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+14.11 грн
8000+12.51 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MCQ070N15YH-TP MCQ070N15YH-TP MCC (Micro Commercial Components) MCQ070N15YH(SOP-8).pdf Description: N-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
6+61.68 грн
10+36.83 грн
100+23.82 грн
500+17.08 грн
1000+15.39 грн
2000+13.95 грн
Мінімальне замовлення: 6
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MSJWFR60N60-BP MSJWFR60N60-BP MCC (Micro Commercial Components) MSJWFR60N60(TO-247AB(E)).pdf Description: N-CHANNEL MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8078 pF @ 100 V
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SF68G-BP SF61G_SF68G(DO-201AD).pdf
SF68G-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SF68G-AP SF61G_SF68G(DO-201AD).pdf
SF68G-AP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SF68G-TP SF61G_SF68G(DO-201AD).pdf
SF68G-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 6A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MSJU06N80A-TP MSJU06N80A(DPAK).pdf
MSJU06N80A-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.8A, 10V
Power Dissipation (Max): 56.8W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 25 V
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SMCJ1.5KE9.1AQ-TP SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf
SMCJ1.5KE9.1AQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 7.8VWM 13.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 111.9A
Voltage - Reverse Standoff (Typ): 7.8V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJP6KE22CAQ-TP SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf
SMBJP6KE22CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 18.8VWM 30.6V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TBSA60M-TP TBSA60M(TBSG).pdf
TBSA60M-TP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 6A TBSG
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+13.12 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TBSA60M-TP TBSA60M(TBSG).pdf
TBSA60M-TP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 6A TBSG
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TBSG
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.46 грн
10+31.92 грн
100+20.60 грн
500+14.74 грн
1000+13.26 грн
Мінімальне замовлення: 7
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3GBJ3516-BP-HF 3GBJ3508_3GBJ3516(TSB-5).pdf
3GBJ3516-BP-HF
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 3P 1.6KV 35A TSB-5
Packaging: Tape & Reel (TR)
Package / Case: 5-SIP, TSB-5
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TSB-5
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MCT1117C-ADJ-TP MCT1117C(SOT-223).pdf
MCT1117C-ADJ-TP
Виробник: MCC (Micro Commercial Components)
Description: IC REG LINEAR POS ADJ 1A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 1.25V
PSRR: 60dB ~ 62dB (120Hz ~ 1kHz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Temperature
на замовлення 2428 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.16 грн
37+8.79 грн
41+7.73 грн
100+6.19 грн
250+5.68 грн
500+5.36 грн
1000+5.02 грн
Мінімальне замовлення: 25
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MUR160GP-TP MUR105GP-MUR160GP(DO-41).pdf
MUR160GP-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.50 грн
Мінімальне замовлення: 5000
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MJD32CHE3-TP MJD32CHE3(DPAK).pdf
MJD32CHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 100V 3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
Qualification: AEC-Q101
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DDTC143ECA-TP DDTC143ECA(SOT-23).pdf
DDTC143ECA-TP
Виробник: MCC (Micro Commercial Components)
Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.53 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DDTC143ECA-TP DDTC143ECA(SOT-23).pdf
DDTC143ECA-TP
Виробник: MCC (Micro Commercial Components)
Description: DIGITAL TRANSISTOR NPN SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 160 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.21 грн
25+12.83 грн
100+8.03 грн
500+5.55 грн
1000+4.91 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P6KE91A-BP P6KE6.8(A)-P6KE600(A)(DO-15).pdf
P6KE91A-BP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 77.8VWM 125VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
товару немає в наявності
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SMAJ58CAQ-TP SMAJ5.0AQ_SMAJ190CAQ(SMA).pdf
SMAJ58CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 58VWM 93.6VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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MCAC1D4N04YL-TP MCAC1D4N04YL(DFN5060).pdf
MCAC1D4N04YL-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 185A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+32.74 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC1D4N04YL-TP MCAC1D4N04YL(DFN5060).pdf
MCAC1D4N04YL-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 185A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6330 pF @ 20 V
на замовлення 9977 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+106.09 грн
10+67.95 грн
100+48.34 грн
500+35.76 грн
1000+32.74 грн
2000+32.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
15KP200CAL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP200CAL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 200VWM 322VC R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+174.08 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
15KP200CAL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP200CAL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 200VWM 322VC R-6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 47A
Voltage - Reverse Standoff (Typ): 200V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 222V
Voltage - Clamping (Max) @ Ipp: 322V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.94 грн
10+278.29 грн
100+200.71 грн
В кошику  од. на суму  грн.
SICW025N120H4-BP SICW025N120H4(TO-247-4).pdf
SICW025N120H4-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1217.99 грн
10+832.34 грн
В кошику  од. на суму  грн.
SICW025N120H-BP SICW025N120H(TO-247AB).pdf
SICW025N120H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
на замовлення 356 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1210.59 грн
10+826.80 грн
В кошику  од. на суму  грн.
SB250-AP SB220-SB260(DO-15).pdf
SB250-AP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SB250-TP SB220-SB260(DO-15).pdf
SB250-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 50V 2A DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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P4KE120CA-BP P4KE6.8A_P4KE550A(DO-41).pdf
P4KE120CA-BP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 102VWM 165VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE120A-BP P4KE6.8A_P4KE550A(DO-41).pdf
P4KE120A-BP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 102VWM 165VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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MCAC30P03-TP MCAC30P03(DFN5060).pdf
MCAC30P03-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 30 30A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+11.10 грн
Мінімальне замовлення: 5000
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MCAC30P03-TP MCAC30P03(DFN5060).pdf
MCAC30P03-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 30 30A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
на замовлення 9995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.81 грн
11+30.57 грн
100+19.63 грн
500+13.98 грн
1000+12.55 грн
2000+11.34 грн
Мінімальне замовлення: 7
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MCU30P03-TP MCU30P03(DPAK).pdf
MCU30P03-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1719 pF @ 25 V
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SICW040N120H-BP SICW040N120H(TO-247AB).pdf
SICW040N120H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 40mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3619 pF @ 800 V
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+858.60 грн
10+575.35 грн
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GS1MFLHE3-TP GS1MFLHE3(DO-221AC).pdf
GS1MFLHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
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GBUA10M-BP GBUA10M(JC).pdf
GBUA10M-BP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 4948 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.68 грн
10+39.44 грн
100+30.25 грн
500+24.95 грн
1000+21.60 грн
2000+20.47 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
B5819P1L-TP B5819P1L(DFN1608-2).pdf
B5819P1L-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 1A DFN16082
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DFN1608-2
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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SMBJP6KE220CAQ-TP SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf
SMBJP6KE220CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SI2310K-TP SI2310K(SOT-23).pdf
SI2310K-TP
Виробник: MCC (Micro Commercial Components)
Description: SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 104mOhm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
на замовлення 29980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+28.78 грн
19+17.26 грн
100+10.83 грн
500+7.56 грн
1000+6.71 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
15KP58AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP58AL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 58VWM 94VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 94V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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15KP54AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP54AL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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15KP54CAL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP54CAL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 54VWM 87.5VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 171A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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SI2302AK-TP SI2302AK(SOT-23).pdf
SI2302AK-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 10 V
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SI2303K-TP SI2303K(SOT-23).PDF
SI2303K-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 300mA, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 166 pF @ 25 V
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5.0SMLJ180CA-TP 5.0SMLJ11A_5.0SMLJ400CA(SMC).pdf
5.0SMLJ180CA-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 180VWM 292VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 17.1A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 200V
Voltage - Clamping (Max) @ Ipp: 292V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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SMF12CAQ-TP SMF5.0AQ_SMF100CAQ(SOD-123FL).pdf
SMF12CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 12VWM 19.9VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.05A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SICW060N065H-BP SICW060N065H(TO-247AB).pdf
SICW060N065H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SICW060N065H4-BP SICW060N065H4(TO-247-4).pdf
SICW060N065H4-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SIL04P06YHE3-TP SIL04P06YHE3(SOT23-6L).pdf
SIL04P06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.76 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIL04P06YHE3-TP SIL04P06YHE3(SOT23-6L).pdf
SIL04P06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V
Power Dissipation (Max): 1.7W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+54.28 грн
10+32.39 грн
100+20.89 грн
500+14.95 грн
1000+13.44 грн
Мінімальне замовлення: 7
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ESD0552P6-TP ESD0552P6(DFN1610-2).pdf
ESD0552P6-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 5VWM 14VC DFN16102
Package / Case: 0603 (1610 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 500pF @ 1MHz
Current - Peak Pulse (10/1000µs): 160A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN1610-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 2400W (2.4kW)
Power Line Protection: No
Packaging: Tape & Reel (TR)
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SMAZ24HE3-TP SMAZ10HE3~SMAZ39HE3(SMA).pdf
SMAZ24HE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 24V 1W DO214AC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Qualification: AEC-Q101
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MCTL270N04YHE3-TP MCTL270N04YHE3(TOLL-8L).pdf
MCTL270N04YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 468W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TOLL-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
Qualification: AEC-Q101
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SL26HL-TP SL24HL_SL210HL(SOD-123HL).pdf
SL26HL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 60V 2A SOD123HL
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 4968 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.43 грн
16+20.27 грн
100+10.51 грн
500+7.06 грн
1000+5.90 грн
Мінімальне замовлення: 11
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MCTL1D4N10YH-TP
MCTL1D4N10YH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 297W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10768 pF @ 50 V
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MCTL2D1N10YH-TP MCTL2D1N10YH(TOLL-8).pdf
MCTL2D1N10YH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+81.13 грн
Мінімальне замовлення: 2000
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MCTL2D1N10YH-TP MCTL2D1N10YH(TOLL-8).pdf
MCTL2D1N10YH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tj)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 50 V
на замовлення 3044 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+250.84 грн
10+157.36 грн
100+109.79 грн
500+89.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCTK105N60FH-TP MCTK105N60FH(TOLL-8L-KS).pdf
MCTK105N60FH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+125.14 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
MCTK105N60FH-TP MCTK105N60FH(TOLL-8L-KS).pdf
MCTK105N60FH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 114mOhm @ 15.3A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+341.30 грн
10+217.63 грн
100+169.76 грн
500+138.21 грн
1000+136.56 грн
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MCTK075N60FH-TP MCTK075N60FH(TOLL-8L-KS).pdf
MCTK075N60FH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+181.83 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
MCTK075N60FH-TP MCTK075N60FH(TOLL-8L-KS).pdf
MCTK075N60FH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+424.37 грн
10+296.27 грн
100+239.67 грн
500+195.44 грн
В кошику  од. на суму  грн.
MCQ070N15YH-TP MCQ070N15YH(SOP-8).pdf
MCQ070N15YH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+14.11 грн
8000+12.51 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MCQ070N15YH-TP MCQ070N15YH(SOP-8).pdf
MCQ070N15YH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 75 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.68 грн
10+36.83 грн
100+23.82 грн
500+17.08 грн
1000+15.39 грн
2000+13.95 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MSJWFR60N60-BP MSJWFR60N60(TO-247AB(E)).pdf
MSJWFR60N60-BP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8078 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
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