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SI3415D-TP SI3415D-TP MCC (Micro Commercial Components) SI3415D(SOT-23).pdf Description: SMALL SINGAL MOSFETS,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
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MSJPFFR20N60-BP MSJPFFR20N60-BP MCC (Micro Commercial Components) MSJPFFR20N60(TO-220F).pdf Description: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
Rds On (Max) @ Id, Vgs: 204mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)
2+236.03 грн
10+147.78 грн
100+102.68 грн
500+78.30 грн
1000+72.50 грн
Мінімальне замовлення: 2
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MSJPFR20N60-BP MSJPFR20N60-BP MCC (Micro Commercial Components) MSJPFR20N60(TO-220AB(H)).pdf Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 204mOhm @ 8.5A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+236.03 грн
10+147.78 грн
100+102.68 грн
500+78.30 грн
1000+72.50 грн
2000+67.62 грн
Мінімальне замовлення: 2
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15KP33AL-TP 15KP33AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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BC847BSQ-TP BC847BSQ-TP MCC (Micro Commercial Components) BC847BSQ(SOT-363).pdf Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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BC847BSQ-TP BC847BSQ-TP MCC (Micro Commercial Components) BC847BSQ(SOT-363).pdf Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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UMD3N-TPQ2 UMD3N-TPQ2 MCC (Micro Commercial Components) UMD3N(SOT-363).pdf Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
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MCQD08P04-TP MCQD08P04-TP MCC (Micro Commercial Components) MCQD08P04(SOP-8).pdf Description: MOSFET 2P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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MURB15120L-TP MURB15120L-TP MCC (Micro Commercial Components) MURB15120L(D2-PAK).pdf Description: DIODE STANDARD 1200V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
2+172.71 грн
10+106.52 грн
100+72.34 грн
800+51.08 грн
Мінімальне замовлення: 2
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15KP33CAL-TP 15KP33CAL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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SICW080N120H-BP SICW080N120H-BP MCC (Micro Commercial Components) Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
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SICW080N120H4-BP SICW080N120H4-BP MCC (Micro Commercial Components) SICW080N120H4(TO-247-4).pdf Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
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SICW080N120Y-BP SICW080N120Y-BP MCC (Micro Commercial Components) SICW080N120Y(TO-247).pdf Description: MOSFET N-CH 1200V 38A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V
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SMBJP6KE110CAQ-TP SMBJP6KE110CAQ-TP MCC (Micro Commercial Components) SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf Description: TVS DIODE 94VWM 152VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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15KP30AL-TP 15KP30AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 30VWM 50.7VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 296A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 50.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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MCAC80P06YHE3-TP MCAC80P06YHE3-TP MCC (Micro Commercial Components) MCAC80P06YHE3(DFN5060).pdf Description: MOSFET P-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
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MCAC80P06YHE3-TP MCAC80P06YHE3-TP MCC (Micro Commercial Components) MCAC80P06YHE3(DFN5060).pdf Description: MOSFET P-CH 60 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2362 шт:
термін постачання 21-31 дні (днів)
2+184.22 грн
10+133.92 грн
100+92.21 грн
500+69.72 грн
1000+62.79 грн
2000+59.77 грн
Мінімальне замовлення: 2
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MCAC40P03-TP MCAC40P03-TP MCC (Micro Commercial Components) Description: MOSFET P-CH 30 40A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2718 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+23.68 грн
10000+21.23 грн
Мінімальне замовлення: 5000
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MCAC40P03-TP MCAC40P03-TP MCC (Micro Commercial Components) Description: MOSFET P-CH 30 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2718 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
4+97.87 грн
10+59.48 грн
100+39.23 грн
500+28.64 грн
1000+26.01 грн
2000+23.80 грн
Мінімальне замовлення: 4
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MCAC50P04HE3-TP MCAC50P04HE3-TP MCC (Micro Commercial Components) NULL Description: MOSFET P-CH 40 50A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3302 pF @ 30 V
Qualification: AEC-Q101
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SR208-BP SR208-BP MCC (Micro Commercial Components) Description: DIODE SCHOTTKY 80V 2A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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BAT54CWTHQ-TP BAT54CWTHQ-TP MCC (Micro Commercial Components) BAT54WTHQ_BAT54SWTHQ(SOT-323).PDF Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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SICW050N065H-BP SICW050N065H-BP MCC (Micro Commercial Components) SICW050N065H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SICW050N065H4-BP SICW050N065H4-BP MCC (Micro Commercial Components) SICW050N065H4(TO-247-4).pdf Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SM5S24AHE3-TP SM5S24AHE3-TP MCC (Micro Commercial Components) SM5S10AHE3-SM5S43CAHE3(DO-218AB).pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESD5V0D3A-TP ESD5V0D3A-TP MCC (Micro Commercial Components) ESD3V3D3A_ESD36VD3A(SOD-323).pdf Description: TVS DIODE 5VWM 14VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -45°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 140pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 200W
Power Line Protection: No
товару немає в наявності
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CSPSBULC3V3P6-TP CSPSBULC3V3P6-TP MCC (Micro Commercial Components) CSPSBULC3V3P6(CSP1610-6).pdf Description: TVS DIODE 3.3VWM 16.5V CSP16106
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CSP1610-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 200W
Power Line Protection: Yes
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CSPSBULC3V3P6-TP CSPSBULC3V3P6-TP MCC (Micro Commercial Components) CSPSBULC3V3P6(CSP1610-6).pdf Description: TVS DIODE 3.3VWM 16.5V CSP16106
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CSP1610-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 200W
Power Line Protection: Yes
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
10+35.36 грн
16+20.83 грн
100+12.04 грн
500+8.09 грн
1000+7.51 грн
Мінімальне замовлення: 10
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MCACD033N10YL-TP MCACD033N10YL-TP MCC (Micro Commercial Components) MCACD033N10YL(PDFN5060-8D).pdf Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Power - Max: 41W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+23.93 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCACD033N10YL-TP MCACD033N10YL-TP MCC (Micro Commercial Components) MCACD033N10YL(PDFN5060-8D).pdf Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Power - Max: 41W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)
4+97.04 грн
10+59.24 грн
100+39.24 грн
500+28.77 грн
1000+26.17 грн
2000+24.55 грн
Мінімальне замовлення: 4
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RB521S-40-T3P RB521S-40-T3P MCC (Micro Commercial Components) Description: DIODE SCHOTTKY 40V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
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15KP51AL-TP 15KP51AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 51VWM 82.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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P4KE39CA-AP P4KE39CA-AP MCC (Micro Commercial Components) P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE39CA-BP P4KE39CA-BP MCC (Micro Commercial Components) P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE39CA-TP P4KE39CA-TP MCC (Micro Commercial Components) P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE39CA-TP SMAJP4KE39CA-TP MCC (Micro Commercial Components) SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE39CAHE3-TP SMAJP4KE39CAHE3-TP MCC (Micro Commercial Components) SMAJP4KE12(C)AHE3-SMAJP4KE220(C)AHE3(DO-214AC).pdf Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJP4KE39CAQ-TP SMAJP4KE39CAQ-TP MCC (Micro Commercial Components) SMAJP4KE6.8AQ_SMAJP4KE220CAQ(SMA).pdf Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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15KP100AL-TP 15KP100AL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 100VWM 162VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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MT5016W-BP MT5016W-BP MCC (Micro Commercial Components) MT5010W_MT5016W(MT-W).pdf Description: BRIDGE RECT 3P 1.6KV 50A MT-W
Packaging: Bulk
Package / Case: 5-Square, MT-W
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-W
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.6 kV
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SICW025N065H-BP SICW025N065H-BP MCC (Micro Commercial Components) SICW025N065H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
1+945.78 грн
10+636.97 грн
В кошику  од. на суму  грн.
SICW025N065H4-BP SICW025N065H4-BP MCC (Micro Commercial Components) SICW025N065H4(TO-247-4).pdf Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
1+952.36 грн
10+641.72 грн
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MCAC25N10YHE3-TP MCAC25N10YHE3-TP MCC (Micro Commercial Components) MCAC25N10YHE3(DFN5060).pdf Description: MOSFET N-CH 100 25A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
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MCAC25N10YHE3-TP MCAC25N10YHE3-TP MCC (Micro Commercial Components) MCAC25N10YHE3(DFN5060).pdf Description: MOSFET N-CH 100 25A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4941 шт:
термін постачання 21-31 дні (днів)
4+103.62 грн
10+63.12 грн
100+41.96 грн
500+30.84 грн
1000+28.09 грн
2000+26.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SICW120N120H-BP SICW120N120H-BP MCC (Micro Commercial Components) SICW120N120H(TO-247AB).pdf Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
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SICW120N120H4-BP SICW120N120H4-BP MCC (Micro Commercial Components) SICW120N120H4(TO-247-4).pdf Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
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SMAJ4751AQ-TP SMAJ4751AQ-TP MCC (Micro Commercial Components) SMAJ4735AQ_SMAJ4764AQ(SMA).pdf Description: DIODE ZENER 30V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+7.51 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
SMAJ4751AQ-TP SMAJ4751AQ-TP MCC (Micro Commercial Components) SMAJ4735AQ_SMAJ4764AQ(SMA).pdf Description: DIODE ZENER 30V 1W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
на замовлення 14965 шт:
термін постачання 21-31 дні (днів)
10+36.19 грн
13+25.82 грн
100+16.86 грн
500+11.94 грн
1000+10.23 грн
2000+9.63 грн
Мінімальне замовлення: 10
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MCU011N10YL-TP MCU011N10YL-TP MCC (Micro Commercial Components) MCU011N10YL(DPAK).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
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MCU011N10YL-TP MCU011N10YL-TP MCC (Micro Commercial Components) MCU011N10YL(DPAK).pdf Description: POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
на замовлення 2438 шт:
термін постачання 21-31 дні (днів)
4+99.51 грн
10+60.58 грн
100+40.16 грн
500+29.47 грн
1000+26.83 грн
Мінімальне замовлення: 4
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SI2307K-TP SI2307K-TP MCC (Micro Commercial Components) SI2307K(SOT-23).pdf Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.48 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SI2307K-TP SI2307K-TP MCC (Micro Commercial Components) SI2307K(SOT-23).pdf Description: P-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
на замовлення 5360 шт:
термін постачання 21-31 дні (днів)
16+21.38 грн
25+12.67 грн
100+7.90 грн
500+5.48 грн
1000+4.85 грн
Мінімальне замовлення: 16
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MBRBFL30100CT-TP MBRBFL30100CT-TP MCC (Micro Commercial Components) MBRBFL30100CT(TO-263AC).pdf Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+80.73 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
MBRBFL30100CT-TP MBRBFL30100CT-TP MCC (Micro Commercial Components) MBRBFL30100CT(TO-263AC).pdf Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+226.16 грн
10+138.91 грн
100+105.42 грн
500+84.70 грн
Мінімальне замовлення: 2
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GBU4J-BP-HF GBU4J-BP-HF MCC (Micro Commercial Components) Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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MC6331-3.3-TP MC6331-3.3-TP MCC (Micro Commercial Components) MC6331(SOT23-5L).pdf Description: IC REG LIN 3.3V 300MA SOT23-5L
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-23-5L
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.16V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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MC6331-5.0-TP MC6331-5.0-TP MCC (Micro Commercial Components) MC6331(SOT23-5L).pdf Description: IC REG LINEAR 5V 300MA SOT23-5L
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-23-5L
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature, Short Circuit
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MC6331-2.8-TP MC6331-2.8-TP MCC (Micro Commercial Components) MC6331(SOT23-5L).pdf Description: IC REG LIN 2.8V 300MA SOT23-5L
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-23-5L
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature, Short Circuit
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SICW030N120H-BP SICW030N120H-BP MCC (Micro Commercial Components) SICW030N120H(TO-247AB).pdf Description: SIC MOSFETS,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
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SICW030N120H4-BP SICW030N120H4-BP MCC (Micro Commercial Components) SICW030N120H4(TO-247-4).pdf Description: SIC MOSFETS,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
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SI3415D-TP SI3415D(SOT-23).pdf
SI3415D-TP
Виробник: MCC (Micro Commercial Components)
Description: SMALL SINGAL MOSFETS,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Tj)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
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MSJPFFR20N60-BP MSJPFFR20N60(TO-220F).pdf
MSJPFFR20N60-BP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc)
Rds On (Max) @ Id, Vgs: 204mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 1984 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+236.03 грн
10+147.78 грн
100+102.68 грн
500+78.30 грн
1000+72.50 грн
Мінімальне замовлення: 2
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MSJPFR20N60-BP MSJPFR20N60(TO-220AB(H)).pdf
MSJPFR20N60-BP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.9A (Tc)
Rds On (Max) @ Id, Vgs: 204mOhm @ 8.5A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.7mA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+236.03 грн
10+147.78 грн
100+102.68 грн
500+78.30 грн
1000+72.50 грн
2000+67.62 грн
Мінімальне замовлення: 2
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15KP33AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP33AL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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BC847BSQ-TP BC847BSQ(SOT-363).pdf
BC847BSQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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BC847BSQ-TP BC847BSQ(SOT-363).pdf
BC847BSQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS 2NPN 45V 100MA SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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UMD3N-TPQ2 UMD3N(SOT-363).pdf
UMD3N-TPQ2
Виробник: MCC (Micro Commercial Components)
Description: PRE-BIASED TRANSISTOR
Packaging: Tape & Reel (TR)
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MCQD08P04-TP MCQD08P04(SOP-8).pdf
MCQD08P04-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2P-CH 40V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 30V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23.98nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
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MURB15120L-TP MURB15120L(D2-PAK).pdf
MURB15120L-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1200V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.71 грн
10+106.52 грн
100+72.34 грн
800+51.08 грн
Мінімальне замовлення: 2
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15KP33CAL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP33CAL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33VWM 54.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 274A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 54.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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SICW080N120H-BP
SICW080N120H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
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SICW080N120H4-BP SICW080N120H4(TO-247-4).pdf
SICW080N120H4-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 20V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2644 pF @ 800 V
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SICW080N120Y-BP SICW080N120Y(TO-247).pdf
SICW080N120Y-BP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 1200V 38A TO247-3
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 18V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 1000 V
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SMBJP6KE110CAQ-TP SMBJP6KE6.8AQ_SMBJP6KE220CAQ(SMB).pdf
SMBJP6KE110CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 94VWM 152VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 104.5V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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15KP30AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP30AL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 30VWM 50.7VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 296A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 50.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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MCAC80P06YHE3-TP MCAC80P06YHE3(DFN5060).pdf
MCAC80P06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
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MCAC80P06YHE3-TP MCAC80P06YHE3(DFN5060).pdf
MCAC80P06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 60 80A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 120W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2362 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.22 грн
10+133.92 грн
100+92.21 грн
500+69.72 грн
1000+62.79 грн
2000+59.77 грн
Мінімальне замовлення: 2
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MCAC40P03-TP
MCAC40P03-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 30 40A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2718 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+23.68 грн
10000+21.23 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC40P03-TP
MCAC40P03-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 30 40A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 54W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2718 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.87 грн
10+59.48 грн
100+39.23 грн
500+28.64 грн
1000+26.01 грн
2000+23.80 грн
Мінімальне замовлення: 4
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MCAC50P04HE3-TP NULL
MCAC50P04HE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET P-CH 40 50A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3302 pF @ 30 V
Qualification: AEC-Q101
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SR208-BP
SR208-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 80V 2A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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BAT54CWTHQ-TP BAT54WTHQ_BAT54SWTHQ(SOT-323).PDF
BAT54CWTHQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
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SICW050N065H-BP SICW050N065H(TO-247AB).pdf
SICW050N065H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SICW050N065H4-BP SICW050N065H4(TO-247-4).pdf
SICW050N065H4-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 400 V
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SM5S24AHE3-TP SM5S10AHE3-SM5S43CAHE3(DO-218AB).pdf
SM5S24AHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3600W (3.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESD5V0D3A-TP ESD3V3D3A_ESD36VD3A(SOD-323).pdf
ESD5V0D3A-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 5VWM 14VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -45°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 140pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 200W
Power Line Protection: No
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CSPSBULC3V3P6-TP CSPSBULC3V3P6(CSP1610-6).pdf
CSPSBULC3V3P6-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 16.5V CSP16106
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CSP1610-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 200W
Power Line Protection: Yes
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.03 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
CSPSBULC3V3P6-TP CSPSBULC3V3P6(CSP1610-6).pdf
CSPSBULC3V3P6-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 16.5V CSP16106
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CSP1610-6
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.8V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 200W
Power Line Protection: Yes
на замовлення 5960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.36 грн
16+20.83 грн
100+12.04 грн
500+8.09 грн
1000+7.51 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MCACD033N10YL-TP MCACD033N10YL(PDFN5060-8D).pdf
MCACD033N10YL-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Power - Max: 41W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+23.93 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCACD033N10YL-TP MCACD033N10YL(PDFN5060-8D).pdf
MCACD033N10YL-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 100V 20A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Power - Max: 41W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
на замовлення 9990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.04 грн
10+59.24 грн
100+39.24 грн
500+28.77 грн
1000+26.17 грн
2000+24.55 грн
Мінімальне замовлення: 4
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RB521S-40-T3P
RB521S-40-T3P
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 200MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
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15KP51AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP51AL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 51VWM 82.8VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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P4KE39CA-AP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE39CA-AP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE39CA-BP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE39CA-BP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE39CA-TP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE39CA-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE39CA-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE39CA-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJP4KE39CAHE3-TP SMAJP4KE12(C)AHE3-SMAJP4KE220(C)AHE3(DO-214AC).pdf
SMAJP4KE39CAHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJP4KE39CAQ-TP SMAJP4KE6.8AQ_SMAJP4KE220CAQ(SMA).pdf
SMAJP4KE39CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 7.4A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.05V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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15KP100AL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP100AL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 100VWM 162VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: R-6
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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MT5016W-BP MT5010W_MT5016W(MT-W).pdf
MT5016W-BP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 3P 1.6KV 50A MT-W
Packaging: Bulk
Package / Case: 5-Square, MT-W
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-W
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1.6 kV
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SICW025N065H-BP SICW025N065H(TO-247AB).pdf
SICW025N065H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+945.78 грн
10+636.97 грн
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SICW025N065H4-BP SICW025N065H4(TO-247-4).pdf
SICW025N065H4-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 400 V
на замовлення 357 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+952.36 грн
10+641.72 грн
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MCAC25N10YHE3-TP MCAC25N10YHE3(DFN5060).pdf
MCAC25N10YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 25A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
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MCAC25N10YHE3-TP MCAC25N10YHE3(DFN5060).pdf
MCAC25N10YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 100 25A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 25A, 10V
Power Dissipation (Max): 53W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4941 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.62 грн
10+63.12 грн
100+41.96 грн
500+30.84 грн
1000+28.09 грн
2000+26.75 грн
Мінімальне замовлення: 4
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SICW120N120H-BP SICW120N120H(TO-247AB).pdf
SICW120N120H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
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SICW120N120H4-BP SICW120N120H4(TO-247-4).pdf
SICW120N120H4-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFET,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 20V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 800 V
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SMAJ4751AQ-TP SMAJ4735AQ_SMAJ4764AQ(SMA).pdf
SMAJ4751AQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 30V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+7.51 грн
Мінімальне замовлення: 7500
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SMAJ4751AQ-TP SMAJ4735AQ_SMAJ4764AQ(SMA).pdf
SMAJ4751AQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 30V 1W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 22.8 V
на замовлення 14965 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.19 грн
13+25.82 грн
100+16.86 грн
500+11.94 грн
1000+10.23 грн
2000+9.63 грн
Мінімальне замовлення: 10
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MCU011N10YL-TP MCU011N10YL(DPAK).pdf
MCU011N10YL-TP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
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MCU011N10YL-TP MCU011N10YL(DPAK).pdf
MCU011N10YL-TP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
на замовлення 2438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.51 грн
10+60.58 грн
100+40.16 грн
500+29.47 грн
1000+26.83 грн
Мінімальне замовлення: 4
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SI2307K-TP SI2307K(SOT-23).pdf
SI2307K-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.48 грн
Мінімальне замовлення: 3000
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SI2307K-TP SI2307K(SOT-23).pdf
SI2307K-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
на замовлення 5360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+21.38 грн
25+12.67 грн
100+7.90 грн
500+5.48 грн
1000+4.85 грн
Мінімальне замовлення: 16
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MBRBFL30100CT-TP MBRBFL30100CT(TO-263AC).pdf
MBRBFL30100CT-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+80.73 грн
Мінімальне замовлення: 1500
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MBRBFL30100CT-TP MBRBFL30100CT(TO-263AC).pdf
MBRBFL30100CT-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOT 100V 15A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 30 µA @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+226.16 грн
10+138.91 грн
100+105.42 грн
500+84.70 грн
Мінімальне замовлення: 2
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GBU4J-BP-HF
GBU4J-BP-HF
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 600V 4A GBU
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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MC6331-3.3-TP MC6331(SOT23-5L).pdf
MC6331-3.3-TP
Виробник: MCC (Micro Commercial Components)
Description: IC REG LIN 3.3V 300MA SOT23-5L
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-23-5L
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.16V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
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MC6331-5.0-TP MC6331(SOT23-5L).pdf
MC6331-5.0-TP
Виробник: MCC (Micro Commercial Components)
Description: IC REG LINEAR 5V 300MA SOT23-5L
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-23-5L
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature, Short Circuit
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MC6331-2.8-TP MC6331(SOT23-5L).pdf
MC6331-2.8-TP
Виробник: MCC (Micro Commercial Components)
Description: IC REG LIN 2.8V 300MA SOT23-5L
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 18V
Number of Regulators: 1
Supplier Device Package: SOT-23-5L
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 80dB ~ 45dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature, Short Circuit
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SICW030N120H-BP SICW030N120H(TO-247AB).pdf
SICW030N120H-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247AB
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247AB
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
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SICW030N120H4-BP SICW030N120H4(TO-247-4).pdf
SICW030N120H4-BP
Виробник: MCC (Micro Commercial Components)
Description: SIC MOSFETS,TO-247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 20V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4909 pF @ 800 V
товару немає в наявності
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