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ESDSBSLC3V3LT-TP ESDSBSLC3V3LT-TP MCC (Micro Commercial Components) ESDSBSLC3V3LT(DFN1006-3B).pdf Description: TVS DIODE 3.3VWM 5VC DFN10063
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.5V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 65W
Power Line Protection: Yes
товару немає в наявності
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ESDSBSLC3V3LT-TP ESDSBSLC3V3LT-TP MCC (Micro Commercial Components) ESDSBSLC3V3LT(DFN1006-3B).pdf Description: TVS DIODE 3.3VWM 5VC DFN10063
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.5V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 65W
Power Line Protection: Yes
на замовлення 6285 шт:
термін постачання 21-31 дні (днів)
19+18.65 грн
28+12.00 грн
100+5.87 грн
500+4.60 грн
1000+3.24 грн
2000+3.04 грн
5000+2.60 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
MCAC011P03L-TP MCAC011P03L-TP MCC (Micro Commercial Components) MCAC011P03L(DFN5060).pdf Description: P-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
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MCAC011P03L-TP MCAC011P03L-TP MCC (Micro Commercial Components) MCAC011P03L(DFN5060).pdf Description: P-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)
7+51.71 грн
11+31.18 грн
100+20.02 грн
500+14.28 грн
1000+12.83 грн
2000+11.61 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MBRP645CTQ-TP MBRP645CTQ-TP MCC (Micro Commercial Components) MBRP645CTQ(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,45V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+12.69 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MBRP645CTQ-TP MBRP645CTQ-TP MCC (Micro Commercial Components) MBRP645CTQ(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,45V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+56.79 грн
10+34.28 грн
100+22.11 грн
500+15.83 грн
1000+14.25 грн
2000+12.91 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBRP6200CTQ-TP MBRP6200CTQ-TP MCC (Micro Commercial Components) MBRP6200CTQ(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+13.34 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MBRP6200CTQ-TP MBRP6200CTQ-TP MCC (Micro Commercial Components) MBRP6200CTQ(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
6+60.18 грн
10+35.75 грн
100+23.14 грн
500+16.60 грн
1000+14.95 грн
2000+13.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC5D5N03YL-TP MCAC5D5N03YL-TP MCC (Micro Commercial Components) MCAC5D5N03YL(DFN5060).pdf Description: MOSFET N-CH 30 55A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+13.71 грн
10000+12.19 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC5D5N03YL-TP MCAC5D5N03YL-TP MCC (Micro Commercial Components) MCAC5D5N03YL(DFN5060).pdf Description: MOSFET N-CH 30 55A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
6+61.88 грн
10+36.65 грн
100+23.71 грн
500+17.03 грн
1000+15.34 грн
2000+13.92 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC2D7N03YL-TP MCAC2D7N03YL-TP MCC (Micro Commercial Components) MCAC2D7N03YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 73W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
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MCAC2D7N03YL-TP MCAC2D7N03YL-TP MCC (Micro Commercial Components) MCAC2D7N03YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 73W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
6+66.12 грн
10+39.43 грн
100+25.58 грн
500+18.42 грн
1000+16.62 грн
2000+15.10 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBRP10100Q-TP MBRP10100Q-TP MCC (Micro Commercial Components) MBRP10100Q(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MBRP10100Q-TP MBRP10100Q-TP MCC (Micro Commercial Components) MBRP10100Q(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)
6+66.12 грн
10+39.59 грн
100+25.72 грн
500+18.52 грн
1000+16.71 грн
2000+15.19 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBRP1560Q-TP MBRP1560Q-TP MCC (Micro Commercial Components) MBRP1560Q(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MBRP1560Q-TP MBRP1560Q-TP MCC (Micro Commercial Components) MBRP1560Q(DFN5060).pdf Description: SCHOTTKY BARRIER RECTIFIERS,60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
6+66.97 грн
10+40.08 грн
100+26.00 грн
500+18.73 грн
1000+16.91 грн
2000+15.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC150N15Y-TP MCAC150N15Y-TP MCC (Micro Commercial Components) MCAC150N15Y(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 41.6W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 75 V
товару немає в наявності
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MCAC150N15Y-TP MCAC150N15Y-TP MCC (Micro Commercial Components) MCAC150N15Y(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 41.6W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 75 V
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)
6+66.97 грн
10+40.08 грн
100+26.00 грн
500+18.73 грн
1000+16.91 грн
2000+15.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC2D6N04Y-TP MCAC2D6N04Y-TP MCC (Micro Commercial Components) MCAC2D6N04Y(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2134 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+31.01 грн
10000+29.23 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC2D6N04Y-TP MCAC2D6N04Y-TP MCC (Micro Commercial Components) MCAC2D6N04Y(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2134 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
6+66.97 грн
10+46.61 грн
25+41.99 грн
100+34.67 грн
250+32.41 грн
500+31.04 грн
1000+29.43 грн
2500+28.26 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC9D6N06YL-TP MCAC9D6N06YL-TP MCC (Micro Commercial Components) MCAC9D6N06YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 48W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+16.51 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC9D6N06YL-TP MCAC9D6N06YL-TP MCC (Micro Commercial Components) MCAC9D6N06YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 48W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+72.05 грн
10+43.10 грн
100+28.10 грн
500+20.30 грн
1000+18.35 грн
2000+16.71 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCAC2D4N03YL-TP MCAC2D4N03YL-TP MCC (Micro Commercial Components) MCAC2D4N03YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+17.05 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC2D4N03YL-TP MCAC2D4N03YL-TP MCC (Micro Commercial Components) MCAC2D4N03YL(DFN5060).pdf Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+73.75 грн
10+44.32 грн
100+28.92 грн
500+20.92 грн
1000+18.92 грн
2000+17.23 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCAC085P10-TP MCAC085P10-TP MCC (Micro Commercial Components) MCAC085P10(DFN5060).pdf Description: P-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 56.8W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+17.85 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC085P10-TP MCAC085P10-TP MCC (Micro Commercial Components) MCAC085P10(DFN5060).pdf Description: P-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 56.8W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+77.14 грн
10+46.12 грн
100+30.15 грн
500+21.85 грн
1000+19.77 грн
2000+18.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MBRB2020CT-TP MBRB2020CT-TP MCC (Micro Commercial Components) Description: DIODE ARRAY SCHOTT 20V 20A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
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ESDSBULC0504DFN10B-TP ESDSBULC0504DFN10B-TP MCC (Micro Commercial Components) ESDSBULC0504DFN10B(DFN-10).pdf Description: TVS DIODE 5VWM 8VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 56W
Power Line Protection: No
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MCG6D0N03YL-TP MCG6D0N03YL-TP MCC (Micro Commercial Components) MCG6D0N03YL(PDFN3333-B).pdf Description: N-CHANNEL MOSFET,PDFN3333-B
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN3333-B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V
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1N4005 1N4005 MCC (Micro Commercial Components) 1N4001_1N4007(DO-41).pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4002 1N4002 MCC (Micro Commercial Components) 1N4001_1N4007(DO-41).pdf Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1N4001 1N4001 MCC (Micro Commercial Components) 1N4001_1N4007(DO-41).pdf Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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MCW075N60FH-BP MCW075N60FH-BP MCC (Micro Commercial Components) MCW075N60FH(TO-247).pdf Description: N-CHANNEL MOSFET,TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
1+485.72 грн
10+315.08 грн
В кошику  од. на суму  грн.
SMF22CA-TP SMF22CA-TP MCC (Micro Commercial Components) SMF5.0A_SMF200CA(SOD-123FL).pdf Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF22CAQ-TP SMF22CAQ-TP MCC (Micro Commercial Components) SMF5.0AQ_SMF100CAQ(SOD-123FL).pdf Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE480A-AP P6KE480A-AP MCC (Micro Commercial Components) P6KE6.8(A)-P6KE600(A)(DO-15).pdf Description: TVS DIODE 408VWM 658VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 408V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 456V
Voltage - Clamping (Max) @ Ipp: 658V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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P6KE480A-TP P6KE480A-TP MCC (Micro Commercial Components) P6KE6.8(A)-P6KE600(A)(DO-15).pdf Description: TVS DIODE 408VWM 658VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 408V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 456V
Voltage - Clamping (Max) @ Ipp: 658V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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SMBJP6KE480A-TP SMBJP6KE480A-TP MCC (Micro Commercial Components) SMBJP6KE6.8(C)A-SMBJP6KE550(C)A(SMB).pdf Description: TVS DIODE 408VWM 658VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Reverse Standoff (Typ): 408V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 456V
Voltage - Clamping (Max) @ Ipp: 658V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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MCB200N06YB-TP MCB200N06YB-TP MCC (Micro Commercial Components) MCB200N06YB(D2-PAK).pdf Description: N-CHANNEL MOSFET,D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
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GBJ15L06-BP GBJ15L06-BP MCC (Micro Commercial Components) GBJ15L06(GBJ).pdf Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2243 шт:
термін постачання 21-31 дні (днів)
2+273.80 грн
10+172.72 грн
100+120.96 грн
500+92.75 грн
1500+82.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GBJ15L08-BP GBJ15L08-BP MCC (Micro Commercial Components) GBJ15L08(GBJ).pdf Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BSS138KV-TP BSS138KV-TP MCC (Micro Commercial Components) BSS138KV(SOT-563).pdf Description: DUAL N-CHANNEL MOSFET,SOT-563
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.55 грн
6000+2.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BSS138KV-TP BSS138KV-TP MCC (Micro Commercial Components) BSS138KV(SOT-563).pdf Description: DUAL N-CHANNEL MOSFET,SOT-563
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
50+6.78 грн
75+4.41 грн
84+3.92 грн
101+3.06 грн
250+2.78 грн
500+2.61 грн
1000+2.43 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
SMBJ78AHE3-TP SMBJ78AHE3-TP MCC (Micro Commercial Components) SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.7A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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SMBJ64AHE3-TP SMBJ64AHE3-TP MCC (Micro Commercial Components) SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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SMBJ64AQ-TP SMBJ64AQ-TP MCC (Micro Commercial Components) SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJP6KE36CAHE3-TP SMBJP6KE36CAHE3-TP MCC (Micro Commercial Components) SMBJP6KE12(C)AHE3-SMBJP6KE220(C)AHE3(DO-214AA).pdf Description: TVS DIODE 30.8VWM DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.2A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ85AHE3-TP SMBJ85AHE3-TP MCC (Micro Commercial Components) SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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DB107 DB107 MCC (Micro Commercial Components) DB101_DB107(DB-1).pdf Description: BRIDGE RECT 1PHASE 1KV 1A DB-1
Packaging: Tube
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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SMA2EZ22D5-TP SMA2EZ22D5-TP MCC (Micro Commercial Components) Description: DIODE ZENER 22V 2W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
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SMB2EZ22D5-TP SMB2EZ22D5-TP MCC (Micro Commercial Components) Description: DIODE ZENER 22V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
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SMA2EZ22D5HE3-TP SMA2EZ22D5HE3-TP MCC (Micro Commercial Components) SMA2EZ10D5HE3-75D5HE3(SMA).pdf Description: DIODE ZENER 22V 2W DO214AC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Qualification: AEC-Q101
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SMB2EZ22D5HE3-TP SMB2EZ22D5HE3-TP MCC (Micro Commercial Components) SMB2EZ10D5HE3-75D5HE3(SMB).pdf Description: DIODE ZENER 22V 2W DO214AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Qualification: AEC-Q101
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MCG010N06YL-TP MCG010N06YL-TP MCC (Micro Commercial Components) MCG010N06YL(PDFN3333).pdf Description: N-CHANNEL MOSFET,PDFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 927 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+13.62 грн
10000+12.10 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCG010N06YL-TP MCG010N06YL-TP MCC (Micro Commercial Components) MCG010N06YL(PDFN3333).pdf Description: N-CHANNEL MOSFET,PDFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 927 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
6+61.03 грн
10+36.49 грн
100+23.57 грн
500+16.92 грн
1000+15.25 грн
2000+13.83 грн
Мінімальне замовлення: 6
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MCQ10N06Y-TP MCQ10N06Y-TP MCC (Micro Commercial Components) MCQ10N06Y(SOP-8).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+14.83 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MCQ10N06Y-TP MCQ10N06Y-TP MCC (Micro Commercial Components) MCQ10N06Y(SOP-8).pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
на замовлення 7804 шт:
термін постачання 21-31 дні (днів)
6+63.58 грн
10+38.37 грн
100+24.86 грн
500+17.89 грн
1000+16.13 грн
2000+14.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCG013N10YL-TP MCG013N10YL-TP MCC (Micro Commercial Components) MCG013N10YL(DFN3333).pdf Description: N-CHANNEL MOSFET,DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+24.67 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCG013N10YL-TP MCG013N10YL-TP MCC (Micro Commercial Components) MCG013N10YL(DFN3333).pdf Description: N-CHANNEL MOSFET,DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
4+100.03 грн
10+61.06 грн
100+40.45 грн
500+29.65 грн
1000+26.98 грн
2000+25.31 грн
Мінімальне замовлення: 4
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SMBJ36AHE3-TP SMBJ36AHE3-TP MCC (Micro Commercial Components) SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf Description: TVS DIODE 36VWM 58.1VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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ESDSBSLC3V3LT-TP ESDSBSLC3V3LT(DFN1006-3B).pdf
ESDSBSLC3V3LT-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 5VC DFN10063
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.5V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 65W
Power Line Protection: Yes
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ESDSBSLC3V3LT-TP ESDSBSLC3V3LT(DFN1006-3B).pdf
ESDSBSLC3V3LT-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 5VC DFN10063
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.5V
Voltage - Clamping (Max) @ Ipp: 5V
Power - Peak Pulse: 65W
Power Line Protection: Yes
на замовлення 6285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.65 грн
28+12.00 грн
100+5.87 грн
500+4.60 грн
1000+3.24 грн
2000+3.04 грн
5000+2.60 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
MCAC011P03L-TP MCAC011P03L(DFN5060).pdf
MCAC011P03L-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
товару немає в наявності
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MCAC011P03L-TP MCAC011P03L(DFN5060).pdf
MCAC011P03L-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.71 грн
11+31.18 грн
100+20.02 грн
500+14.28 грн
1000+12.83 грн
2000+11.61 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MBRP645CTQ-TP MBRP645CTQ(DFN5060).pdf
MBRP645CTQ-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,45V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+12.69 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MBRP645CTQ-TP MBRP645CTQ(DFN5060).pdf
MBRP645CTQ-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,45V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+56.79 грн
10+34.28 грн
100+22.11 грн
500+15.83 грн
1000+14.25 грн
2000+12.91 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBRP6200CTQ-TP MBRP6200CTQ(DFN5060).pdf
MBRP6200CTQ-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+13.34 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MBRP6200CTQ-TP MBRP6200CTQ(DFN5060).pdf
MBRP6200CTQ-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.18 грн
10+35.75 грн
100+23.14 грн
500+16.60 грн
1000+14.95 грн
2000+13.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC5D5N03YL-TP MCAC5D5N03YL(DFN5060).pdf
MCAC5D5N03YL-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 30 55A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+13.71 грн
10000+12.19 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC5D5N03YL-TP MCAC5D5N03YL(DFN5060).pdf
MCAC5D5N03YL-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 30 55A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.88 грн
10+36.65 грн
100+23.71 грн
500+17.03 грн
1000+15.34 грн
2000+13.92 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC2D7N03YL-TP MCAC2D7N03YL(DFN5060).pdf
MCAC2D7N03YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 73W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
MCAC2D7N03YL-TP MCAC2D7N03YL(DFN5060).pdf
MCAC2D7N03YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 73W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+66.12 грн
10+39.43 грн
100+25.58 грн
500+18.42 грн
1000+16.62 грн
2000+15.10 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBRP10100Q-TP MBRP10100Q(DFN5060).pdf
MBRP10100Q-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MBRP10100Q-TP MBRP10100Q(DFN5060).pdf
MBRP10100Q-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 270pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+66.12 грн
10+39.59 грн
100+25.72 грн
500+18.52 грн
1000+16.71 грн
2000+15.19 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MBRP1560Q-TP MBRP1560Q(DFN5060).pdf
MBRP1560Q-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,60V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
MBRP1560Q-TP MBRP1560Q(DFN5060).pdf
MBRP1560Q-TP
Виробник: MCC (Micro Commercial Components)
Description: SCHOTTKY BARRIER RECTIFIERS,60V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: DFN5060
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+66.97 грн
10+40.08 грн
100+26.00 грн
500+18.73 грн
1000+16.91 грн
2000+15.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC150N15Y-TP MCAC150N15Y(DFN5060).pdf
MCAC150N15Y-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 41.6W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 75 V
товару немає в наявності
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MCAC150N15Y-TP MCAC150N15Y(DFN5060).pdf
MCAC150N15Y-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5A, 10V
Power Dissipation (Max): 41.6W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 75 V
на замовлення 4930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+66.97 грн
10+40.08 грн
100+26.00 грн
500+18.73 грн
1000+16.91 грн
2000+15.37 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC2D6N04Y-TP MCAC2D6N04Y(DFN5060).pdf
MCAC2D6N04Y-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2134 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+31.01 грн
10000+29.23 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC2D6N04Y-TP MCAC2D6N04Y(DFN5060).pdf
MCAC2D6N04Y-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2134 pF @ 20 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+66.97 грн
10+46.61 грн
25+41.99 грн
100+34.67 грн
250+32.41 грн
500+31.04 грн
1000+29.43 грн
2500+28.26 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCAC9D6N06YL-TP MCAC9D6N06YL(DFN5060).pdf
MCAC9D6N06YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 48W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+16.51 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC9D6N06YL-TP MCAC9D6N06YL(DFN5060).pdf
MCAC9D6N06YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 48W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+72.05 грн
10+43.10 грн
100+28.10 грн
500+20.30 грн
1000+18.35 грн
2000+16.71 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCAC2D4N03YL-TP MCAC2D4N03YL(DFN5060).pdf
MCAC2D4N03YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.05 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC2D4N03YL-TP MCAC2D4N03YL(DFN5060).pdf
MCAC2D4N03YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 62.5W (Tj)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.75 грн
10+44.32 грн
100+28.92 грн
500+20.92 грн
1000+18.92 грн
2000+17.23 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MCAC085P10-TP MCAC085P10(DFN5060).pdf
MCAC085P10-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 56.8W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.85 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC085P10-TP MCAC085P10(DFN5060).pdf
MCAC085P10-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Power Dissipation (Max): 56.8W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.14 грн
10+46.12 грн
100+30.15 грн
500+21.85 грн
1000+19.77 грн
2000+18.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
MBRB2020CT-TP
MBRB2020CT-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY SCHOTT 20V 20A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
товару немає в наявності
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ESDSBULC0504DFN10B-TP ESDSBULC0504DFN10B(DFN-10).pdf
ESDSBULC0504DFN10B-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 5VWM 8VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 56W
Power Line Protection: No
товару немає в наявності
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MCG6D0N03YL-TP MCG6D0N03YL(PDFN3333-B).pdf
MCG6D0N03YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,PDFN3333-B
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN3333-B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 594 pF @ 15 V
товару немає в наявності
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1N4005 1N4001_1N4007(DO-41).pdf
1N4005
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4002 1N4001_1N4007(DO-41).pdf
1N4002
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1N4001 1N4001_1N4007(DO-41).pdf
1N4001
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 50V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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MCW075N60FH-BP MCW075N60FH(TO-247).pdf
MCW075N60FH-BP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 5V @ 2.8mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3202 pF @ 100 V
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.72 грн
10+315.08 грн
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SMF22CA-TP SMF5.0A_SMF200CA(SOD-123FL).pdf
SMF22CA-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Bulk
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
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SMF22CAQ-TP SMF5.0AQ_SMF100CAQ(SOD-123FL).pdf
SMF22CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 22VWM 35.5VC SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.63A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE480A-AP P6KE6.8(A)-P6KE600(A)(DO-15).pdf
P6KE480A-AP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 408VWM 658VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 408V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 456V
Voltage - Clamping (Max) @ Ipp: 658V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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P6KE480A-TP P6KE6.8(A)-P6KE600(A)(DO-15).pdf
P6KE480A-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 408VWM 658VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 408V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 456V
Voltage - Clamping (Max) @ Ipp: 658V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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SMBJP6KE480A-TP SMBJP6KE6.8(C)A-SMBJP6KE550(C)A(SMB).pdf
SMBJP6KE480A-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 408VWM 658VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Reverse Standoff (Typ): 408V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 456V
Voltage - Clamping (Max) @ Ipp: 658V
Power - Peak Pulse: 600W
Power Line Protection: No
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MCB200N06YB-TP MCB200N06YB(D2-PAK).pdf
MCB200N06YB-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 260W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 25 V
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GBJ15L06-BP GBJ15L06(GBJ).pdf
GBJ15L06-BP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Tube
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 2243 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+273.80 грн
10+172.72 грн
100+120.96 грн
500+92.75 грн
1500+82.68 грн
Мінімальне замовлення: 2
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GBJ15L08-BP GBJ15L08(GBJ).pdf
GBJ15L08-BP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Tape & Reel (TR)
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BSS138KV-TP BSS138KV(SOT-563).pdf
BSS138KV-TP
Виробник: MCC (Micro Commercial Components)
Description: DUAL N-CHANNEL MOSFET,SOT-563
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.55 грн
6000+2.36 грн
Мінімальне замовлення: 3000
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BSS138KV-TP BSS138KV(SOT-563).pdf
BSS138KV-TP
Виробник: MCC (Micro Commercial Components)
Description: DUAL N-CHANNEL MOSFET,SOT-563
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+6.78 грн
75+4.41 грн
84+3.92 грн
101+3.06 грн
250+2.78 грн
500+2.61 грн
1000+2.43 грн
Мінімальне замовлення: 50
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SMBJ78AHE3-TP SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf
SMBJ78AHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 78VWM 126VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.7A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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SMBJ64AHE3-TP SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf
SMBJ64AHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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SMBJ64AQ-TP SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf
SMBJ64AQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 64VWM 103VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJP6KE36CAHE3-TP SMBJP6KE12(C)AHE3-SMBJP6KE220(C)AHE3(DO-214AA).pdf
SMBJP6KE36CAHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 30.8VWM DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.2A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ85AHE3-TP SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf
SMBJ85AHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 85VWM 137VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
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DB107 DB101_DB107(DB-1).pdf
DB107
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 1A DB-1
Packaging: Tube
Package / Case: 4-EDIP (0.321", 8.15mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DB-1
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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SMA2EZ22D5-TP
SMA2EZ22D5-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 22V 2W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
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SMB2EZ22D5-TP
SMB2EZ22D5-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 22V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AA (SMB)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
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SMA2EZ22D5HE3-TP SMA2EZ10D5HE3-75D5HE3(SMA).pdf
SMA2EZ22D5HE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 22V 2W DO214AC
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Qualification: AEC-Q101
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SMB2EZ22D5HE3-TP SMB2EZ10D5HE3-75D5HE3(SMB).pdf
SMB2EZ22D5HE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 22V 2W DO214AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Qualification: AEC-Q101
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MCG010N06YL-TP MCG010N06YL(PDFN3333).pdf
MCG010N06YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,PDFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 927 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+13.62 грн
10000+12.10 грн
Мінімальне замовлення: 5000
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MCG010N06YL-TP MCG010N06YL(PDFN3333).pdf
MCG010N06YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,PDFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 39W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 927 pF @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.03 грн
10+36.49 грн
100+23.57 грн
500+16.92 грн
1000+15.25 грн
2000+13.83 грн
Мінімальне замовлення: 6
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MCQ10N06Y-TP MCQ10N06Y(SOP-8).pdf
MCQ10N06Y-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+14.83 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
MCQ10N06Y-TP MCQ10N06Y(SOP-8).pdf
MCQ10N06Y-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 30 V
на замовлення 7804 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+63.58 грн
10+38.37 грн
100+24.86 грн
500+17.89 грн
1000+16.13 грн
2000+14.65 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MCG013N10YL-TP MCG013N10YL(DFN3333).pdf
MCG013N10YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+24.67 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCG013N10YL-TP MCG013N10YL(DFN3333).pdf
MCG013N10YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.03 грн
10+61.06 грн
100+40.45 грн
500+29.65 грн
1000+26.98 грн
2000+25.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SMBJ36AHE3-TP SMBJ5.0(C)AHE3_SMBJ190(C)AHE3(SMB).pdf
SMBJ36AHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 36VWM 58.1VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
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