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US2Q-TP US2Q-TP Micro Commercial Co US2Q(DO-214AA).pdf Description: DIODE GEN PURP 1.2KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 10568 шт:
термін постачання 21-31 дні (днів)
10+34.54 грн
12+28.52 грн
100+21.31 грн
500+15.72 грн
1000+12.14 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
US1Q-TP US1Q-TP Micro Commercial Co PdfFile_774590.pdf Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+12.40 грн
10000+11.09 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
US1Q-TP US1Q-TP Micro Commercial Co PdfFile_774590.pdf Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 11309 шт:
термін постачання 21-31 дні (днів)
9+38.86 грн
11+31.93 грн
100+22.18 грн
500+16.25 грн
1000+13.21 грн
2000+11.81 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
SIX3439K-TP SIX3439K-TP Micro Commercial Co SIX3439K(SOT-563).pdf Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
3000+10.09 грн
6000+8.85 грн
9000+8.41 грн
15000+7.43 грн
21000+7.15 грн
30000+6.89 грн
75000+6.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIX3439K-TP SIX3439K-TP Micro Commercial Co SIX3439K(SOT-563).pdf Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 103878 шт:
термін постачання 21-31 дні (днів)
8+44.91 грн
13+26.53 грн
100+16.93 грн
500+11.99 грн
1000+10.73 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIX3134K-TP SIX3134K-TP Micro Commercial Co SIX3134K(SOT-563).pdf Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
3000+10.67 грн
6000+9.37 грн
9000+8.90 грн
15000+7.86 грн
21000+7.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIX3134K-TP SIX3134K-TP Micro Commercial Co SIX3134K(SOT-563).pdf Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 40922 шт:
термін постачання 21-31 дні (днів)
8+47.50 грн
12+28.11 грн
100+17.92 грн
500+12.68 грн
1000+11.35 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DTC114ESA-BP DTC114ESA-BP Micro Commercial Co DTC114ESA%28TO-92S%29-V1.pdf Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
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DTC114ESA-AP DTC114ESA-AP Micro Commercial Co DTC114ESA%28TO-92S%29-V1.pdf Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
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FR1001GP-AP FR1001GP-AP Micro Commercial Co FR1001GP-FR1007GP(R-6).pdf Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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FR1001GP-TP FR1001GP-TP Micro Commercial Co FR1001GP-FR1007GP(R-6).pdf Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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1N4100-TP 1N4100-TP Micro Commercial Co 1N4614-1N4125(DO-35)_DS.pdf Description: DIODE ZENER 7.5V 500MW DO35
товару немає в наявності
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BZT52C6V8LP-TP BZT52C6V8LP-TP Micro Commercial Co DS_353_BZT52C2V4LP-BZT52C39LP.pdf Description: DIODE ZENER 6.8V 250MW SOD882
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-882
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FR602GP-AP FR602GP-AP Micro Commercial Co FR601GP-FR607GP(R-6).pdf Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
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1N6001B-TP 1N6001B-TP Micro Commercial Co 1N5985B-1N6016B_DS.pdf Description: DIODE ZENER 500MW DO-35
товару немає в наявності
В кошику  од. на суму  грн.
US5B-TP US5B-TP Micro Commercial Co US5A-US5M(DO-214AB).pdf Description: DIODE GEN PURP 100V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3000+11.74 грн
6000+10.62 грн
15000+9.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
US5B-TP US5B-TP Micro Commercial Co US5A-US5M(DO-214AB).pdf Description: DIODE GEN PURP 100V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 19115 шт:
термін постачання 21-31 дні (днів)
9+41.45 грн
11+32.18 грн
100+21.93 грн
500+15.43 грн
1000+11.58 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MPSW51AM-AP MPSW51AM-AP Micro Commercial Co Description: TRANS PNP 40V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товару немає в наявності
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MPSW51A-AP MPSW51A-AP Micro Commercial Co MPSW51A%28TO-92%29-V1.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
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MPSW51A-BP MPSW51A-BP Micro Commercial Co MPSW51A%28TO-92%29-V1.pdf Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
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MPSW51-AP MPSW51-AP Micro Commercial Co MPSW51(TO-92)-V1.pdf Description: TRANS PNP 30V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товару немає в наявності
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MPSW51-BP MPSW51-BP Micro Commercial Co MPSW51(TO-92)-V1.pdf Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товару немає в наявності
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GBL408-BPC01 GBL408-BPC01 Micro Commercial Co GBL4005-BPC01-GBL410-BPC01(GBL).pdf Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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GBL4005-BP GBL4005-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBL401-BP GBL401-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GBL402-BP GBL402-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBL404-BP GBL404-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GBL408-BP GBL408-BP Micro Commercial Co GBL4005-GBL410%28GBL%29-C.pdf Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MCAC45N10Y-YP MCAC45N10Y-YP Micro Commercial Co Description: N-CHANNEL MOSFET, DFN5060 PACKAG
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MCAC45N10Y-YP MCAC45N10Y-YP Micro Commercial Co Description: N-CHANNEL MOSFET, DFN5060 PACKAG
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SK210-TP SK210-TP Micro Commercial Co SK22-SK210%28HSMB%29.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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2SB647L-C-AP 2SB647L-C-AP Micro Commercial Co 2SB647L.pdf Description: TRANS PNP 80V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 750 mW
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MUR140GP-AP MUR140GP-AP Micro Commercial Co MUR105GP-MUR160GP(DO-41).pdf Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MUR140GP-TP MUR140GP-TP Micro Commercial Co MUR105GP-MUR160GP(DO-41).pdf Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SMCJ1.5KE540A-TP SMCJ1.5KE540A-TP Micro Commercial Co SMCJ1.5KE6.8(C)A-SMCJ1.5KE550(C)A(DO-214AB).pdf Description: TVS DIODE 459VWM 740VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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5KP40CA-TP 5KP40CA-TP Micro Commercial Co 5KP5.0(C)~5KP440(C)A(R-6).pdf Description: TVS DIODE 40VWM 64.5VC R6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+87.74 грн
Мінімальне замовлення: 500
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5KP40CA-TP 5KP40CA-TP Micro Commercial Co 5KP5.0(C)~5KP440(C)A(R-6).pdf Description: TVS DIODE 40VWM 64.5VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
3+157.18 грн
10+125.49 грн
100+99.85 грн
Мінімальне замовлення: 3
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S8550-C-BP S8550-C-BP Micro Commercial Co S8550(TO-92).pdf Description: TRANS PNP 25V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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KBP3005G-BP KBP3005G-BP Micro Commercial Co KBP3005G-KBP310G(GBP).pdf Description: BRIDGE RECT 50V 3A GBP
Packaging: Bulk
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N4935GP-AP 1N4935GP-AP Micro Commercial Co 1N4933GP-1N4937GP(DO-41).pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR2G-LTP Micro Commercial Co FR2A-L-FR2M-L(DO-214AA).pdf Description: DIODE GEN PURP 400V 2A DO214AA
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FR2G-TP Micro Commercial Co FR2A-FR2M_RevB_11-01-11.pdf Description: DIODE 2A 400V SMB DO-214AA
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BZT52C56-TP Micro Commercial Co BZT52C2V4~BZT52C75(500mW)(SOD-123).pdf Description: DIODE ZENER 500MW SOD-123
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MMBZ5240B-TP MMBZ5240B-TP Micro Commercial Co MMBZ5221B-MMBZ5259B(SOT-23).pdf Description: DIODE ZENER 10V 350MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
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FR203GP-AP FR203GP-AP Micro Commercial Co FR201GP-FR207GP(DO-15).pdf Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR203GP-TP FR203GP-TP Micro Commercial Co FR201GP-FR207GP(DO-15).pdf Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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2SD1499-P-BP 2SD1499-P-BP Micro Commercial Co 2SD1499-P.pdf Description: TRANS NPN 100V 5A TO220F
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KBJL408G-BP Micro Commercial Co Description: DIODE BRIDGE KBJL
Packaging: Bulk
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GBJA10005-BP Micro Commercial Co Description: DIODE BRIDGE 10A JA
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KBJA10005-BP Micro Commercial Co Description: DIODE BRIDGE 10A JB
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HER301G-AP HER301G-AP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N5396GP-AP 1N5396GP-AP Micro Commercial Co 1N5391GP~1N5399GP(DO-15).pdf Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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1N5396GP-TP 1N5396GP-TP Micro Commercial Co 1N5391GP~1N5399GP(DO-15).pdf Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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SIL05N06-TP SIL05N06-TP Micro Commercial Co SIL05N06(SOT23-6L).pdf Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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SIL05N06-TP SIL05N06-TP Micro Commercial Co SIL05N06(SOT23-6L).pdf Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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M8550-B-AP M8550-B-AP Micro Commercial Co Description: TRANS PNP 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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LLDB4-TP Micro Commercial Co LLDB4_DS.pdf Description: DIAC BIDIRECTIONAL MINIMELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Breakover: 35 ~ 45V
Current - Breakover: 100 µA
Supplier Device Package: Mini MELF
Current - Peak Output: 2 A
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FR1K-TP Micro Commercial Co FR10A-FR10M.pdf Description: DIODE GEN PURP 800V 1A DO214AA
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FR1K-LTP FR1K-LTP Micro Commercial Co FR1A-L-FR1M-L(DO-214AA).pdf Description: DIODE 800V 1A SMB DO214AA
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SI5618-TP SI5618-TP Micro Commercial Co SI5618(SOT-23).pdf Description: MOSFET P-CH 60V 1.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+7.97 грн
6000+7.36 грн
Мінімальне замовлення: 3000
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US2Q-TP US2Q(DO-214AA).pdf
US2Q-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1.2KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 10568 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.54 грн
12+28.52 грн
100+21.31 грн
500+15.72 грн
1000+12.14 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
US1Q-TP PdfFile_774590.pdf
US1Q-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+12.40 грн
10000+11.09 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
US1Q-TP PdfFile_774590.pdf
US1Q-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1.2KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
на замовлення 11309 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.86 грн
11+31.93 грн
100+22.18 грн
500+16.25 грн
1000+13.21 грн
2000+11.81 грн
Мінімальне замовлення: 9
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SIX3439K-TP SIX3439K(SOT-563).pdf
SIX3439K-TP
Виробник: Micro Commercial Co
Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.09 грн
6000+8.85 грн
9000+8.41 грн
15000+7.43 грн
21000+7.15 грн
30000+6.89 грн
75000+6.34 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIX3439K-TP SIX3439K(SOT-563).pdf
SIX3439K-TP
Виробник: Micro Commercial Co
Description: MOSFET N/P-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA, 660mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V, 170pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 103878 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.91 грн
13+26.53 грн
100+16.93 грн
500+11.99 грн
1000+10.73 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SIX3134K-TP SIX3134K(SOT-563).pdf
SIX3134K-TP
Виробник: Micro Commercial Co
Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.67 грн
6000+9.37 грн
9000+8.90 грн
15000+7.86 грн
21000+7.57 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIX3134K-TP SIX3134K(SOT-563).pdf
SIX3134K-TP
Виробник: Micro Commercial Co
Description: MOSFET 2N-CH 20V 0.75A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 16V
Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
на замовлення 40922 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+47.50 грн
12+28.11 грн
100+17.92 грн
500+12.68 грн
1000+11.35 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
DTC114ESA-BP DTC114ESA%28TO-92S%29-V1.pdf
DTC114ESA-BP
Виробник: Micro Commercial Co
Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC114ESA-AP DTC114ESA%28TO-92S%29-V1.pdf
DTC114ESA-AP
Виробник: Micro Commercial Co
Description: TRANS PREBIAS NPN 50V TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
товару немає в наявності
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FR1001GP-AP FR1001GP-FR1007GP(R-6).pdf
FR1001GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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FR1001GP-TP FR1001GP-FR1007GP(R-6).pdf
FR1001GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 10A R-6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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1N4100-TP 1N4614-1N4125(DO-35)_DS.pdf
1N4100-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 7.5V 500MW DO35
товару немає в наявності
В кошику  од. на суму  грн.
BZT52C6V8LP-TP DS_353_BZT52C2V4LP-BZT52C39LP.pdf
BZT52C6V8LP-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 6.8V 250MW SOD882
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-882
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
FR602GP-AP FR601GP-FR607GP(R-6).pdf
FR602GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 6A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N6001B-TP 1N5985B-1N6016B_DS.pdf
1N6001B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 500MW DO-35
товару немає в наявності
В кошику  од. на суму  грн.
US5B-TP US5A-US5M(DO-214AB).pdf
US5B-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.74 грн
6000+10.62 грн
15000+9.98 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
US5B-TP US5A-US5M(DO-214AB).pdf
US5B-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 19115 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.45 грн
11+32.18 грн
100+21.93 грн
500+15.43 грн
1000+11.58 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MPSW51AM-AP
MPSW51AM-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 40V 1A TO92MOD
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
товару немає в наявності
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MPSW51A-AP MPSW51A%28TO-92%29-V1.pdf
MPSW51A-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 40V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
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MPSW51A-BP MPSW51A%28TO-92%29-V1.pdf
MPSW51A-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
товару немає в наявності
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MPSW51-AP MPSW51(TO-92)-V1.pdf
MPSW51-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 30V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товару немає в наявності
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MPSW51-BP MPSW51(TO-92)-V1.pdf
MPSW51-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 30V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
товару немає в наявності
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GBL408-BPC01 GBL4005-BPC01-GBL410-BPC01(GBL).pdf
GBL408-BPC01
Виробник: Micro Commercial Co
Description: DIODE GPP SGL PHASE 4A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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GBL4005-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL4005-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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GBL401-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL401-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GBL402-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL402-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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GBL404-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL404-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GBL408-BP GBL4005-GBL410%28GBL%29-C.pdf
GBL408-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MCAC45N10Y-YP
MCAC45N10Y-YP
Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060 PACKAG
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MCAC45N10Y-YP
MCAC45N10Y-YP
Виробник: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060 PACKAG
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SK210-TP SK22-SK210%28HSMB%29.pdf
SK210-TP
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 100V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
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2SB647L-C-AP 2SB647L.pdf
2SB647L-C-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 80V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 5V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 750 mW
товару немає в наявності
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MUR140GP-AP MUR105GP-MUR160GP(DO-41).pdf
MUR140GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MUR140GP-TP MUR105GP-MUR160GP(DO-41).pdf
MUR140GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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SMCJ1.5KE540A-TP SMCJ1.5KE6.8(C)A-SMCJ1.5KE550(C)A(DO-214AB).pdf
SMCJ1.5KE540A-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 459VWM 740VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 459V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 513V
Voltage - Clamping (Max) @ Ipp: 740V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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5KP40CA-TP 5KP5.0(C)~5KP440(C)A(R-6).pdf
5KP40CA-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 40VWM 64.5VC R6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+87.74 грн
Мінімальне замовлення: 500
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5KP40CA-TP 5KP5.0(C)~5KP440(C)A(R-6).pdf
5KP40CA-TP
Виробник: Micro Commercial Co
Description: TVS DIODE 40VWM 64.5VC R6
Packaging: Cut Tape (CT)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.18 грн
10+125.49 грн
100+99.85 грн
Мінімальне замовлення: 3
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S8550-C-BP S8550(TO-92).pdf
S8550-C-BP
Виробник: Micro Commercial Co
Description: TRANS PNP 25V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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KBP3005G-BP KBP3005G-KBP310G(GBP).pdf
KBP3005G-BP
Виробник: Micro Commercial Co
Description: BRIDGE RECT 50V 3A GBP
Packaging: Bulk
Package / Case: 4-SIP, GBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C
Technology: Standard
Supplier Device Package: GBP
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N4935GP-AP 1N4933GP-1N4937GP(DO-41).pdf
1N4935GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR2G-LTP FR2A-L-FR2M-L(DO-214AA).pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 2A DO214AA
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FR2G-TP FR2A-FR2M_RevB_11-01-11.pdf
Виробник: Micro Commercial Co
Description: DIODE 2A 400V SMB DO-214AA
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BZT52C56-TP BZT52C2V4~BZT52C75(500mW)(SOD-123).pdf
Виробник: Micro Commercial Co
Description: DIODE ZENER 500MW SOD-123
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MMBZ5240B-TP MMBZ5221B-MMBZ5259B(SOT-23).pdf
MMBZ5240B-TP
Виробник: Micro Commercial Co
Description: DIODE ZENER 10V 350MW SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
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FR203GP-AP FR201GP-FR207GP(DO-15).pdf
FR203GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR203GP-TP FR201GP-FR207GP(DO-15).pdf
FR203GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 2A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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2SD1499-P-BP 2SD1499-P.pdf
2SD1499-P-BP
Виробник: Micro Commercial Co
Description: TRANS NPN 100V 5A TO220F
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KBJL408G-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE KBJL
Packaging: Bulk
Package / Case: 4-SIP, KBJL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBJL
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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GBJA10005-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 10A JA
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KBJA10005-BP
Виробник: Micro Commercial Co
Description: DIODE BRIDGE 10A JB
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HER301G-AP HER301G~HER308G(DO-201AD).pdf
HER301G-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N5396GP-AP 1N5391GP~1N5399GP(DO-15).pdf
1N5396GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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1N5396GP-TP 1N5391GP~1N5399GP(DO-15).pdf
1N5396GP-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 500V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
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SIL05N06-TP SIL05N06(SOT23-6L).pdf
SIL05N06-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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SIL05N06-TP SIL05N06(SOT23-6L).pdf
SIL05N06-TP
Виробник: Micro Commercial Co
Description: MOSFET N-CH 60V 5A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 30 V
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M8550-B-AP
M8550-B-AP
Виробник: Micro Commercial Co
Description: TRANS PNP 25V 0.8A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
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LLDB4-TP LLDB4_DS.pdf
Виробник: Micro Commercial Co
Description: DIAC BIDIRECTIONAL MINIMELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Operating Temperature: -40°C ~ 110°C (TJ)
Voltage - Breakover: 35 ~ 45V
Current - Breakover: 100 µA
Supplier Device Package: Mini MELF
Current - Peak Output: 2 A
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FR1K-TP FR10A-FR10M.pdf
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 800V 1A DO214AA
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FR1K-LTP FR1A-L-FR1M-L(DO-214AA).pdf
FR1K-LTP
Виробник: Micro Commercial Co
Description: DIODE 800V 1A SMB DO214AA
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SI5618-TP SI5618(SOT-23).pdf
SI5618-TP
Виробник: Micro Commercial Co
Description: MOSFET P-CH 60V 1.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.97 грн
6000+7.36 грн
Мінімальне замовлення: 3000
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