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BZV55C9V1/TR BZV55C9V1/TR Microchip Technology Description: DIODE ZENER 9.1V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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JAN1N5711-1/TR JAN1N5711-1/TR Microchip Technology 8865-lds-0040-pdf.pdf Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANTXV1N5711UR-1/TR JANTXV1N5711UR-1/TR Microchip Technology 131890-lds-0040-1.pdf Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JAN1N5711UR-1/TR JAN1N5711UR-1/TR Microchip Technology 131890-lds-0040-1.pdf Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANTXV1N5711-1/TR JANTXV1N5711-1/TR Microchip Technology 8865-lds-0040-pdf.pdf Description: DIODE SCHOTTKY 50V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711-1/TR 1N5711-1/TR Microchip Technology LDS-0040_r4%2C+1N5711-12_1N6857-58_DSB2810_5712%2C+MIL-PRF-19500-444.pdf Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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1N5711E3/TR 1N5711E3/TR Microchip Technology 150_000072603.pdf Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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1N5711UR-1E3/TR 1N5711UR-1E3/TR Microchip Technology 131890-lds-0040-1.pdf Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANTXV1N5711UB/TR JANTXV1N5711UB/TR Microchip Technology 2448131889-lds-0040-2.pdf Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANKCA1N5711 JANKCA1N5711 Microchip Technology Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANHCA1N5711 JANHCA1N5711 Microchip Technology Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711/TR 1N5711/TR Microchip Technology 150_000072603.pdf Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANS1N5711UB/TR JANS1N5711UB/TR Microchip Technology Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711UR-1/TR 1N5711UR-1/TR Microchip Technology 131890-lds-0040-1.pdf Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANTX1N5711UB/TR JANTX1N5711UB/TR Microchip Technology 2448131889-lds-0040-2.pdf Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711E3 1N5711E3 Microchip Technology 150_000072603.pdf Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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Jantxv2N3057A Jantxv2N3057A Microchip Technology 125196-lds-0185-1-datasheet Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JAN2N3057A JAN2N3057A Microchip Technology 125196-lds-0185-1-datasheet Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANTX2N3057A JANTX2N3057A Microchip Technology 125196-lds-0185-1-datasheet Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANSR2N3057A JANSR2N3057A Microchip Technology Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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1N5240A/TR 1N5240A/TR Microchip Technology 1N5221%20-%201N5281B.pdf Description: DIODE ZENER 10V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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1N5240B/TR 1N5240B/TR Microchip Technology 1N5221%20-%201N5281B.pdf Description: DIODE ZENER 10V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
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PIC16F18425-E/SL PIC16F18425-E/SL Microchip Technology 40001894B.pdf Description: IC MCU 8BIT 14KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: EUSART, I2C, LINbus, MSSP, SMBus/PMBus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Number of I/O: 11
DigiKey Programmable: Not Verified
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
3+110.20 грн
25+97.16 грн
100+87.66 грн
Мінімальне замовлення: 3
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ATSAMG55J19B-AU ATSAMG55J19B-AU Microchip Technology Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
1+434.23 грн
25+382.10 грн
100+344.95 грн
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ATSAMG55J19B-AUT ATSAMG55J19B-AUT Microchip Technology Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+372.39 грн
Мінімальне замовлення: 1500
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ATSAMG55J19B-AUT ATSAMG55J19B-AUT Microchip Technology Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 2827 шт:
термін постачання 21-31 дні (днів)
1+451.51 грн
25+394.99 грн
100+358.60 грн
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ATSAMG55J19B-MU ATSAMG55J19B-MU Microchip Technology Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
1+414.50 грн
25+362.18 грн
100+327.58 грн
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ATSAMG55J19B-MUT ATSAMG55J19B-MUT Microchip Technology Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
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ATSAMG55J19B-MUT ATSAMG55J19B-MUT Microchip Technology Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 3277 шт:
термін постачання 21-31 дні (днів)
1+423.54 грн
25+370.35 грн
100+336.03 грн
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BM70BLE01FC2-0B05BA BM70BLE01FC2-0B05BA Microchip Technology Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+603.65 грн
25+530.93 грн
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BM70BLES1FC2-0B05BA BM70BLES1FC2-0B05BA Microchip Technology BM70 Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: 33-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
1+656.29 грн
25+578.00 грн
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BM70BLE01FC2-0B04AA BM70BLE01FC2-0B04AA Microchip Technology BM70-71-Bluetooth-Low-Energy-BLE-Module-Data-Sheet-DS60001372J.pdf Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Current - Transmitting: 13mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
1+603.65 грн
25+530.93 грн
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MXLSMLJ5.0Ae3 MXLSMLJ5.0Ae3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 5VWM 9.2VC DO214AB
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ATSAMD20E15B-AU ATSAMD20E15B-AU Microchip Technology SAM-D20-Family-Data-Sheet-DS60001504.pdf Description: IC MCU 32BIT 32KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 32-TQFP (7x7)
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)
2+179.29 грн
25+157.47 грн
100+141.93 грн
Мінімальне замовлення: 2
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678-2 Microchip Technology 11555-wt3-21-datasheet Description: BRIDGE RECTIFIER
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BZV55C6V2/TR BZV55C6V2/TR Microchip Technology 150_8298-bzv55-c2v4-c75-pdf.pdf Description: DIODE ZENER 6.2V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
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CDLL4148E3 CDLL4148E3 Microchip Technology 000068400.pdf Description: DIODE STANDARD 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
2+213.01 грн
100+190.16 грн
Мінімальне замовлення: 2
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CDLL4148/TR CDLL4148/TR Microchip Technology 000068400.pdf Description: DIODE STANDARD 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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PIC16F785T/CSD01 Microchip Technology Description: IC MCU 8BIT 3.5KB FLASH 20PLCC
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BZV55C5V6/TR BZV55C5V6/TR Microchip Technology 150_8298-bzv55-c2v4-c75-pdf.pdf Description: DIODE ZENER 5.6V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±7%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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JANS2N918UB/TR JANS2N918UB/TR Microchip Technology 8811-lds-0010-pdf.pdf Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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JAN2N918UB/TR Microchip Technology 8811-lds-0010-pdf.pdf Description: TRANS NPN 15V 0.05A
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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JANTXV2N918UB/TR JANTXV2N918UB/TR Microchip Technology 8811-lds-0010-pdf.pdf Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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JANTX2N918UB/TR JANTX2N918UB/TR Microchip Technology 8811-lds-0010-pdf.pdf Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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PIC18LF25K83-E/SO PIC18LF25K83-E/SO Microchip Technology filehandler.aspx?ddocname=en599873 Description: IC MCU 8BIT 32KB FLASH 28SOIC
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
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PIC24FJ64GL306T-I/MR PIC24FJ64GL306T-I/MR Microchip Technology PIC24FJ128GL306-Family-Data-Sheet-DS30010198B.pdf Description: IC MCU 16BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 17x10/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 52
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+170.87 грн
Мінімальне замовлення: 3300
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PIC24FJ64GL306T-I/MR PIC24FJ64GL306T-I/MR Microchip Technology PIC24FJ128GL306-Family-Data-Sheet-DS30010198B.pdf Description: IC MCU 16BIT 64KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 17x10/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 52
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
2+205.60 грн
25+181.36 грн
100+164.54 грн
Мінімальне замовлення: 2
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BZV55C2V4/TR BZV55C2V4/TR Microchip Technology Description: DIODE ZENER 2.4V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±8%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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ATSAML10D14A-MUT ATSAML10D14A-MUT Microchip Technology SAM-L10L11-Family-DataSheet-DS60001513F.pdf Description: IC MCU 32BIT 16KB FLASH 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 5x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+137.45 грн
Мінімальне замовлення: 6000
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ATSAML10D14A-YUT ATSAML10D14A-YUT Microchip Technology SAM-L10L11-Family-DataSheet-DS60001513F.pdf Description: IC MCU 32BIT 16KB FLASH 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 5x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 24-SSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
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JANSF2N2369AUB/TR JANSF2N2369AUB/TR Microchip Technology Description: TRANS NPN 15V 400NA UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 400 nA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSR2N2369A JANSR2N2369A Microchip Technology Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSR2N2369AUA JANSR2N2369AUA Microchip Technology Description: TRANS NPN 15V UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANTXV2N2369AUB/TR JANTXV2N2369AUB/TR Microchip Technology Description: TRANS NPN 20V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSM2N2369AUB/TR JANSM2N2369AUB/TR Microchip Technology Description: TRANS NPN 20V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JAN2N2369AUA/TR JAN2N2369AUA/TR Microchip Technology Description: TRANS NPN 15V TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANS2N2369AUA/TR JANS2N2369AUA/TR Microchip Technology Description: TRANS NPN 15V 400NA UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 400 nA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANKCAR2N2369A JANKCAR2N2369A Microchip Technology Description: TRANS NPN 15V TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSL2N2369AUB/TR JANSL2N2369AUB/TR Microchip Technology Description: TRANS NPN 20V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSR2N2369AUB/TR JANSR2N2369AUB/TR Microchip Technology Description: TRANS NPN 15V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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BZV55C9V1/TR
BZV55C9V1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 9.1V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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JAN1N5711-1/TR 8865-lds-0040-pdf.pdf
JAN1N5711-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANTXV1N5711UR-1/TR 131890-lds-0040-1.pdf
JANTXV1N5711UR-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JAN1N5711UR-1/TR 131890-lds-0040-1.pdf
JAN1N5711UR-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANTXV1N5711-1/TR 8865-lds-0040-pdf.pdf
JANTXV1N5711-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711-1/TR LDS-0040_r4%2C+1N5711-12_1N6857-58_DSB2810_5712%2C+MIL-PRF-19500-444.pdf
1N5711-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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1N5711E3/TR 150_000072603.pdf
1N5711E3/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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1N5711UR-1E3/TR 131890-lds-0040-1.pdf
1N5711UR-1E3/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANTXV1N5711UB/TR 2448131889-lds-0040-2.pdf
JANTXV1N5711UB/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JANKCA1N5711
JANKCA1N5711
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANHCA1N5711
JANHCA1N5711
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711/TR 150_000072603.pdf
1N5711/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANS1N5711UB/TR
JANS1N5711UB/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711UR-1/TR 131890-lds-0040-1.pdf
1N5711UR-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V 33MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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JANTX1N5711UB/TR 2448131889-lds-0040-2.pdf
JANTX1N5711UB/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 50V UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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1N5711E3 150_000072603.pdf
1N5711E3
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
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Jantxv2N3057A 125196-lds-0185-1-datasheet
Jantxv2N3057A
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JAN2N3057A 125196-lds-0185-1-datasheet
JAN2N3057A
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANTX2N3057A 125196-lds-0185-1-datasheet
JANTX2N3057A
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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JANSR2N3057A
JANSR2N3057A
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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1N5240A/TR 1N5221%20-%201N5281B.pdf
1N5240A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7.6 V
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1N5240B/TR 1N5221%20-%201N5281B.pdf
1N5240B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
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PIC16F18425-E/SL 40001894B.pdf
PIC16F18425-E/SL
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 11x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: EUSART, I2C, LINbus, MSSP, SMBus/PMBus, RS-232, RS-485, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Number of I/O: 11
DigiKey Programmable: Not Verified
на замовлення 552 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+110.20 грн
25+97.16 грн
100+87.66 грн
Мінімальне замовлення: 3
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ATSAMG55J19B-AU Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf
ATSAMG55J19B-AU
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+434.23 грн
25+382.10 грн
100+344.95 грн
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ATSAMG55J19B-AUT Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf
ATSAMG55J19B-AUT
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+372.39 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
ATSAMG55J19B-AUT Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf
ATSAMG55J19B-AUT
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 2827 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+451.51 грн
25+394.99 грн
100+358.60 грн
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ATSAMG55J19B-MU Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf
ATSAMG55J19B-MU
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 194 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+414.50 грн
25+362.18 грн
100+327.58 грн
В кошику  од. на суму  грн.
ATSAMG55J19B-MUT Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf
ATSAMG55J19B-MUT
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
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ATSAMG55J19B-MUT Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf
ATSAMG55J19B-MUT
Виробник: Microchip Technology
Description: IC MCU 32BIT 512KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-QFN (7.5x7.5)
Number of I/O: 48
DigiKey Programmable: Not Verified
на замовлення 3277 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+423.54 грн
25+370.35 грн
100+336.03 грн
В кошику  од. на суму  грн.
BM70BLE01FC2-0B05BA
BM70BLE01FC2-0B05BA
Виробник: Microchip Technology
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+603.65 грн
25+530.93 грн
В кошику  од. на суму  грн.
BM70BLES1FC2-0B05BA BM70
BM70BLES1FC2-0B05BA
Виробник: Microchip Technology
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: 33-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 10mA
Current - Transmitting: 10mA
Antenna Type: Integrated, Chip
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, GPIO, I2C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 164 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+656.29 грн
25+578.00 грн
В кошику  од. на суму  грн.
BM70BLE01FC2-0B04AA BM70-71-Bluetooth-Low-Energy-BLE-Module-Data-Sheet-DS60001372J.pdf
BM70BLE01FC2-0B04AA
Виробник: Microchip Technology
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Tray
Package / Case: 30-SMD Module
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Current - Transmitting: 13mA
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 106 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+603.65 грн
25+530.93 грн
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MXLSMLJ5.0Ae3 10563-msml-datasheet
MXLSMLJ5.0Ae3
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 9.2VC DO214AB
товару немає в наявності
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ATSAMD20E15B-AU SAM-D20-Family-Data-Sheet-DS60001504.pdf
ATSAMD20E15B-AU
Виробник: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 32-TQFP (7x7)
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 2230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+179.29 грн
25+157.47 грн
100+141.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
678-2 11555-wt3-21-datasheet
Виробник: Microchip Technology
Description: BRIDGE RECTIFIER
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BZV55C6V2/TR 150_8298-bzv55-c2v4-c75-pdf.pdf
BZV55C6V2/TR
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
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CDLL4148E3 000068400.pdf
CDLL4148E3
Виробник: Microchip Technology
Description: DIODE STANDARD 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.01 грн
100+190.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CDLL4148/TR 000068400.pdf
CDLL4148/TR
Виробник: Microchip Technology
Description: DIODE STANDARD 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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PIC16F785T/CSD01
Виробник: Microchip Technology
Description: IC MCU 8BIT 3.5KB FLASH 20PLCC
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BZV55C5V6/TR 150_8298-bzv55-c2v4-c75-pdf.pdf
BZV55C5V6/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±7%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
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JANS2N918UB/TR 8811-lds-0010-pdf.pdf
JANS2N918UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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JAN2N918UB/TR 8811-lds-0010-pdf.pdf
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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JANTXV2N918UB/TR 8811-lds-0010-pdf.pdf
JANTXV2N918UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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JANTX2N918UB/TR 8811-lds-0010-pdf.pdf
JANTX2N918UB/TR
Виробник: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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PIC18LF25K83-E/SO filehandler.aspx?ddocname=en599873
PIC18LF25K83-E/SO
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 28SOIC
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
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PIC24FJ64GL306T-I/MR PIC24FJ128GL306-Family-Data-Sheet-DS30010198B.pdf
PIC24FJ64GL306T-I/MR
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 17x10/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 52
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+170.87 грн
Мінімальне замовлення: 3300
В кошику  од. на суму  грн.
PIC24FJ64GL306T-I/MR PIC24FJ128GL306-Family-Data-Sheet-DS30010198B.pdf
PIC24FJ64GL306T-I/MR
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 17x10/12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 52
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.60 грн
25+181.36 грн
100+164.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BZV55C2V4/TR
BZV55C2V4/TR
Виробник: Microchip Technology
Description: DIODE ZENER 2.4V DO213AA
Packaging: Tape & Reel (TR)
Tolerance: ±8%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Supplier Device Package: DO-213AA
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
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ATSAML10D14A-MUT SAM-L10L11-Family-DataSheet-DS60001513F.pdf
ATSAML10D14A-MUT
Виробник: Microchip Technology
Description: IC MCU 32BIT 16KB FLASH 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 5x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+137.45 грн
Мінімальне замовлення: 6000
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ATSAML10D14A-YUT SAM-L10L11-Family-DataSheet-DS60001513F.pdf
ATSAML10D14A-YUT
Виробник: Microchip Technology
Description: IC MCU 32BIT 16KB FLASH 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M23
Data Converters: A/D 5x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.63V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 24-SSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
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JANSF2N2369AUB/TR
JANSF2N2369AUB/TR
Виробник: Microchip Technology
Description: TRANS NPN 15V 400NA UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 400 nA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSR2N2369A
JANSR2N2369A
Виробник: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSR2N2369AUA
JANSR2N2369AUA
Виробник: Microchip Technology
Description: TRANS NPN 15V UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UA
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANTXV2N2369AUB/TR
JANTXV2N2369AUB/TR
Виробник: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSM2N2369AUB/TR
JANSM2N2369AUB/TR
Виробник: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JAN2N2369AUA/TR
JAN2N2369AUA/TR
Виробник: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANS2N2369AUA/TR
JANS2N2369AUA/TR
Виробник: Microchip Technology
Description: TRANS NPN 15V 400NA UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 400 nA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANKCAR2N2369A
JANKCAR2N2369A
Виробник: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSL2N2369AUB/TR
JANSL2N2369AUB/TR
Виробник: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANSR2N2369AUB/TR
JANSR2N2369AUB/TR
Виробник: Microchip Technology
Description: TRANS NPN 15V UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
товару немає в наявності
В кошику  од. на суму  грн.
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