Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (332490) > Сторінка 1438 з 5542
Фото | Назва | Виробник | Інформація |
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JAN1N4125D-1 | Microchip Technology | Description: DIODE ZENER 47V DO35 |
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JANTXV1N825-1 | Microchip Technology |
Description: DIODE ZENER 6.2V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 (DO-204AH) Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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JANTX1N982CUR-1 | Microchip Technology | Description: DIODE ZENER 75V 500MW DO213AA |
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1N5264B | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N5264B/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N5264BUR-1 | Microchip Technology | Description: DIODE ZENER |
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1N5264A | Microchip Technology | Description: DIODE ZENER |
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24LC64-E/SN16KVAO | Microchip Technology |
Description: IC EEPROM 64KBIT I2C 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
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24LC64-E/ST16KVAO | Microchip Technology |
Description: IC EEPROM 64KBIT I2C 8TSSOP Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
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24LC64XT-E/ST | Microchip Technology |
Description: IC EEPROM 64KBIT I2C 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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JANTX1N5302-1 | Microchip Technology | Description: DIODE REG 500MW DO-7 |
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JAN1N5301-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JANTXV1N5301-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JAN1N5301UR-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JANTX1N5301UR-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JANTXV1N5301UR-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JAN1N5302-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JAN1N5302UR-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JANTX1N5302UR-1 | Microchip Technology | Description: DIODE CURRENT REG 100V |
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JANTX1N4969US | Microchip Technology |
Description: DIODE ZENER 30V 5W D5B Tolerance: ±5% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: D-5B Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V |
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1N1352 | Microchip Technology | Description: STANDARD RECTIFIER |
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1N1352A | Microchip Technology | Description: STANDARD RECTIFIER |
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1N1353 | Microchip Technology | Description: STANDARD RECTIFIER |
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1N1353A | Microchip Technology | Description: STANDARD RECTIFIER |
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MMA052PP45E | Microchip Technology | Description: MMA052PP45E - EVAL BOARD |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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JANTX1N6137 | Microchip Technology | Description: TVS DIODE 152VWM 286.65VC AXIAL |
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MX5KP60CA | Microchip Technology |
Description: TVS DIODE 60VWM 96.8VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 52A Voltage - Reverse Standoff (Typ): 60V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 66.7V Voltage - Clamping (Max) @ Ipp: 96.8V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
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AT21CS01-UUM0B-T | Microchip Technology |
Description: IC EEPROM 1KBIT I2C 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.7V ~ 3.6V Technology: EEPROM Clock Frequency: 125 kbps Memory Format: EEPROM Supplier Device Package: 4-WLCSP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I²C, Single Wire Memory Organization: 128 x 8 DigiKey Programmable: Not Verified |
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IS1870SF-102-TRAY | Microchip Technology |
Description: BLUETOOTH BLE IC 6X6MM I-TEMP Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.402GHz ~ 2.48GHz Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C (TA) Voltage - Supply: 1.9V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v5.0 Current - Receiving: 13mA Data Rate (Max): 921.6kbps Current - Transmitting: 13mA Supplier Device Package: 48-QFN (6x6) GPIO: 31 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 486 шт: термін постачання 21-31 дні (днів) |
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JANTXV1N5531B-1 | Microchip Technology | Description: DIODE ZENER 11V 500MW DO35 |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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JANTX1N4959 | Microchip Technology | Description: DIODE ZENER 11V 5W AXIAL |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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PD-9004G/AC-EU | Microchip Technology | Description: 4-PORT AT 30W 1G AC EU CORD |
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PD-9501GR/SP/AC-US | Microchip Technology | Description: 1-PORT AT 60W SURGE AC US CORD |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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JAN1N6762R | Microchip Technology |
Description: DIODE GEN PURP 50V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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JANTXV1N6764R | Microchip Technology |
Description: DIODE GEN PURP 150V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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JAN1N6672R | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Qualification: MIL-PRF-19500/617 |
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JAN1N6766 | Microchip Technology | Description: RECTIFIER |
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JAN1N6658R | Microchip Technology |
Description: DIODE GEN PURP 150V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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JAN1N6765R | Microchip Technology |
Description: DIODE GEN PURP 200V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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JAN1N6767R | Microchip Technology |
Description: DIODE GEN PURP 600V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 480 V |
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JANTXV1N6659R | Microchip Technology |
Description: DIODE GEN PURP 200V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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JAN1N6763R | Microchip Technology |
Description: DIODE GEN PURP 100V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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JANTX1N6672 | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Qualification: MIL-PRF-19500/617 |
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JANTXV1N6766R | Microchip Technology |
Description: DIODE GEN PURP 400V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 320 V |
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JANTXV1N6767R | Microchip Technology |
Description: DIODE GEN PURP 600V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 480 V |
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JANTX2N7368 | Microchip Technology |
Description: TRANS NPN 80V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 115 W |
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JANTX2N7372 | Microchip Technology |
Description: TRANS PNP 80V 50UA TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 4 W |
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JANTX1N6762R | Microchip Technology | Description: RECTIFIER |
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JANTXV1N6764 | Microchip Technology | Description: RECTIFIER |
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JAN1N6763 | Microchip Technology | Description: RECTIFIER |
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JAN1N6764 | Microchip Technology | Description: RECTIFIER |
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JANTX1N6673 | Microchip Technology |
Description: DIODE GEN PURP 400V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 320 V |
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JANTX1N6657R | Microchip Technology | Description: RECTIFIER |
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JAN1N6673R | Microchip Technology |
Description: DIODE GEN PURP 400V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 320 V |
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JANTX1N6672R | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Qualification: MIL-PRF-19500/617 |
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JANTXV1N6762R | Microchip Technology | Description: RECTIFIER |
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JANTXV1N6657R | Microchip Technology | Description: RECTIFIER |
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JAN1N6674 | Microchip Technology |
Description: DIODE GEN PURP 500V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
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JANTX2N7369 | Microchip Technology |
Description: TRANS PNP 80V 0.005A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 5mA Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 5 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 115 W |
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JAN2N6306T1 | Microchip Technology |
Description: TRANS NPN 250V 8A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 200°C (TJ) Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 250 V |
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JANTXV1N825-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товар відсутній
JANTX1N982CUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AA
Description: DIODE ZENER 75V 500MW DO213AA
товар відсутній
24LC64-E/SN16KVAO |
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
24LC64-E/ST16KVAO |
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
товар відсутній
24LC64XT-E/ST |
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
товар відсутній
JANTX1N4969US |
Виробник: Microchip Technology
Description: DIODE ZENER 30V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Description: DIODE ZENER 30V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
товар відсутній
MMA052PP45E |
Виробник: Microchip Technology
Description: MMA052PP45E - EVAL BOARD
Description: MMA052PP45E - EVAL BOARD
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 43530.37 грн |
JANTX1N6137 |
Виробник: Microchip Technology
Description: TVS DIODE 152VWM 286.65VC AXIAL
Description: TVS DIODE 152VWM 286.65VC AXIAL
товар відсутній
MX5KP60CA |
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 60VWM 96.8VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
AT21CS01-UUM0B-T |
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 125 kbps
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C, Single Wire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT I2C 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 125 kbps
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C, Single Wire
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
товар відсутній
IS1870SF-102-TRAY |
Виробник: Microchip Technology
Description: BLUETOOTH BLE IC 6X6MM I-TEMP
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 13mA
Supplier Device Package: 48-QFN (6x6)
GPIO: 31
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: BLUETOOTH BLE IC 6X6MM I-TEMP
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 13mA
Supplier Device Package: 48-QFN (6x6)
GPIO: 31
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 486 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 203.35 грн |
JANTXV1N5531B-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO35
Description: DIODE ZENER 11V 500MW DO35
на замовлення 10 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 652.87 грн |
JANTX1N4959 |
Виробник: Microchip Technology
Description: DIODE ZENER 11V 5W AXIAL
Description: DIODE ZENER 11V 5W AXIAL
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 478.77 грн |
PD-9004G/AC-EU |
Виробник: Microchip Technology
Description: 4-PORT AT 30W 1G AC EU CORD
Description: 4-PORT AT 30W 1G AC EU CORD
товар відсутній
PD-9501GR/SP/AC-US |
Виробник: Microchip Technology
Description: 1-PORT AT 60W SURGE AC US CORD
Description: 1-PORT AT 60W SURGE AC US CORD
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 9427.01 грн |
JAN1N6762R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 50V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
JANTXV1N6764R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
JAN1N6672R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
товар відсутній
JAN1N6658R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
JAN1N6765R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
JAN1N6767R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 480 V
Description: DIODE GEN PURP 600V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 480 V
товар відсутній
JANTXV1N6659R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
JAN1N6763R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
JANTX1N6672 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
товар відсутній
JANTXV1N6766R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
Description: DIODE GEN PURP 400V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 320 V
товар відсутній
JANTXV1N6767R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 480 V
Description: DIODE GEN PURP 600V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 480 V
товар відсутній
JANTX2N7368 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
товар відсутній
JANTX2N7372 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
товар відсутній
JANTX1N6673 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 320 V
Description: DIODE GEN PURP 400V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 320 V
товар відсутній
JAN1N6673R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 320 V
Description: DIODE GEN PURP 400V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 320 V
товар відсутній
JANTX1N6672R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
товар відсутній
JAN1N6674 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
JANTX2N7369 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 0.005A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Description: TRANS PNP 80V 0.005A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 5mA
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
товар відсутній
JAN2N6306T1 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 8A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Description: TRANS NPN 250V 8A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
товар відсутній