Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (342141) > Сторінка 1441 з 5703
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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JAN1N982CUR-1 | Microchip Technology |
 Description: DIODE ZENER 75V 500MW DO213AA |
товару немає в наявності |
В кошику од. на суму грн. |
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JANTXV1N827-1 | Microchip Technology |
Description: DIODE ZENER 6.2V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V Qualification: MIL-PRF-19500/159 |
товару немає в наявності |
В кошику од. на суму грн. |
| CD821 | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
товару немає в наявності |
В кошику од. на суму грн. | |
| CD821A | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
товару немає в наявності |
В кошику од. на суму грн. | |
.jpg "MXLSMCJ75CAe3") |
MXLSMCJ75CAe3 | Microchip Technology |
Description: TVS DIODE 75VWM 121VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.4A Voltage - Reverse Standoff (Typ): 75V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 83.3V Voltage - Clamping (Max) @ Ipp: 121V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ78Ae3 | Microchip Technology |
Description: TVS DIODE 78VWM 126VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.4A Voltage - Reverse Standoff (Typ): 78V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 86.7V Voltage - Clamping (Max) @ Ipp: 126V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ78CA | Microchip Technology |
Description: TVS DIODE 78VWM 126VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.4A Voltage - Reverse Standoff (Typ): 78V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 86.7V Voltage - Clamping (Max) @ Ipp: 126V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ78CAe3 | Microchip Technology |
Description: TVS DIODE 78VWM 126VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11.4A Voltage - Reverse Standoff (Typ): 78V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 86.7V Voltage - Clamping (Max) @ Ipp: 126V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
.jpg "MXLSMCJ8.0A") |
MXLSMCJ8.0A | Microchip Technology |
Description: TVS DIODE 8VWM 13.6VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ8.0Ae3 | Microchip Technology |
Description: TVS DIODE 8VWM 13.6VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ8.5A | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ8.5Ae3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ8.5CA | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ8.5CAe3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ9.0A | Microchip Technology |
Description: TVS DIODE 9VWM 15.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 97.4A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ9.0Ae3 | Microchip Technology |
Description: TVS DIODE 9VWM 15.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 97.4A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ9.0CA | Microchip Technology |
Description: TVS DIODE 9VWM 15.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ9.0CAe3 | Microchip Technology |
Description: TVS DIODE 9VWM 15.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ90CA | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJ90CAe3 | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE100A | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE10A | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE10Ae3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE110A | Microchip Technology |
Description: TVS DIODE 110VWM 178VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 8.4A Voltage - Reverse Standoff (Typ): 110V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 122V Voltage - Clamping (Max) @ Ipp: 178V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE110Ae3 | Microchip Technology |
Description: TVS DIODE 110VWM 178VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE11A | Microchip Technology |
Description: TVS DIODE 11VWM 18.2VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE11Ae3 | Microchip Technology |
Description: TVS DIODE 11VWM 18.2VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE120A | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE120Ae3 | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.8A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE12A | Microchip Technology |
Description: TVS DIODE 12VWM 19.9VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE12Ae3 | Microchip Technology |
Description: TVS DIODE 12VWM 19.9VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE130A | Microchip Technology |
Description: TVS DIODE 130VWM 209VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMCJLCE130Ae3 | Microchip Technology |
Description: TVS DIODE 130VWM 209VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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JAN2N4150 | Microchip Technology |
Description: TRANS NPN 70V 10A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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LC75/TR | Microchip Technology |
Description: TVS DIODE 75VWM 134VC DO202AA |
товару немає в наявності |
В кошику од. на суму грн. |
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LC75A/TR | Microchip Technology |
Description: TVS DIODE 75VWM 121VC DO202AA |
товару немає в наявності |
В кошику од. на суму грн. |
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JAN1N6105 | Microchip Technology |
Description: TVS DIODE 6.9VWM 14.07VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 35.44A Voltage - Reverse Standoff (Typ): 6.9V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 8.22V Voltage - Clamping (Max) @ Ipp: 14.07V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
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JANTX2N4150S | Microchip Technology |
Description: TRANS NPN 70V 10A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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JANS2N4150 | Microchip Technology |
Description: TRANS NPN 70V 10A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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JANTX2N4150 | Microchip Technology |
Description: TRANS NPN 70V 10A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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JAN2N4150S | Microchip Technology |
Description: TRANS NPN 70V 10A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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JANTXV2N4150S | Microchip Technology |
Description: TRANS NPN 70V 10A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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JANHCA2N4150 | Microchip Technology |
Description: TRANS NPN 70V 10A TO5 Packaging: Tape & Reel (TR) Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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JANKCA2N4150 | Microchip Technology |
Description: TRANS NPN 70V 10A TO5 Packaging: Tape & Reel (TR) Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 1 W Qualification: MIL-PRF-19500/394 |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLRT100KP260CAe3 | Microchip Technology |
Description: TVS DIODE 260VWM 512VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 260V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 289V Voltage - Clamping (Max) @ Ipp: 512V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMBG7.0CAe3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC SMBG Packaging: Bulk Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 50A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: SMBG (DO-215AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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MXLSMLJ120Ae3 | Microchip Technology |
Description: TVS DIODE 120VWM 193VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
| MXPLAD30KP75Ae3 | Microchip Technology |
Description: TVS DIODE 75VWM 121VC PLAD |
товару немає в наявності |
В кошику од. на суму грн. | |
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MXRT100KP260A | Microchip Technology |
Description: TVS DIODE 260VWM 512VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. |
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MXRT100KP260Ae3 | Microchip Technology |
Description: TVS DIODE 260VWM 512VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. |
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MXRT100KP260CAe3 | Microchip Technology |
Description: TVS DIODE 260VWM 512VC CASE 5A |
товару немає в наявності |
В кошику од. на суму грн. |
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MXSMLJ90Ae3 | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXSMLJ90CA | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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MXSMLJ90CAe3 | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. |
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JANTXV1N6128 | Microchip Technology |
Description: TVS DIODE 62.2VWM 118.44VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.18A Voltage - Reverse Standoff (Typ): 62.2V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 74V Voltage - Clamping (Max) @ Ipp: 118.44V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500/516 |
товару немає в наявності |
В кошику од. на суму грн. |
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JANTX1N6109AUS | Microchip Technology |
Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF |
товару немає в наявності |
В кошику од. на суму грн. |
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M5KP6.0Ae3 | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO204AR |
товару немає в наявності |
В кошику од. на суму грн. |
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MART100KP100A | Microchip Technology |
Description: TVS DIODE 100VWM 197VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 197V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
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MART100KP100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 197VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 197V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN1N982CUR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AA
Description: DIODE ZENER 75V 500MW DO213AA
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N827-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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В кошику
од. на суму грн.
| CD821 |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
товару немає в наявності
В кошику
од. на суму грн.
| CD821A |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Description: DIODE ZENER TEMP COMPENSATED
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ75CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 75VWM 121VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ78Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ78CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ78CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 78VWM 126VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.4A
Voltage - Reverse Standoff (Typ): 78V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.7V
Voltage - Clamping (Max) @ Ipp: 126V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ8.0A |
|
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.6VC DO214AB
Description: TVS DIODE 8VWM 13.6VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ8.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 8VWM 13.6VC DO214AB
Description: TVS DIODE 8VWM 13.6VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ8.5A |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ8.5Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ8.5CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ8.5CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ9.0A |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97.4A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97.4A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ9.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97.4A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 97.4A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ9.0CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.4VC DO214AB
Description: TVS DIODE 9VWM 15.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ9.0CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.4VC DO214AB
Description: TVS DIODE 9VWM 15.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ90CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJ90CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE100A |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE100Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO214AB
Description: TVS DIODE 100VWM 162VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE10A |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE10Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
Description: TVS DIODE 10VWM 17VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE110A |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 110VWM 178VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 178V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE110Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 178VC DO214AB
Description: TVS DIODE 110VWM 178VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE11A |
|
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO214AB
Description: TVS DIODE 11VWM 18.2VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE11Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO214AB
Description: TVS DIODE 11VWM 18.2VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE120A |
|
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO214AB
Description: TVS DIODE 120VWM 193VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE120Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE12A |
|
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19.9VC DO214AB
Description: TVS DIODE 12VWM 19.9VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE12Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19.9VC DO214AB
Description: TVS DIODE 12VWM 19.9VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE130A |
|
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO214AB
Description: TVS DIODE 130VWM 209VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MXLSMCJLCE130Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO214AB
Description: TVS DIODE 130VWM 209VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N4150 |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
товару немає в наявності
В кошику
од. на суму грн.
| LC75/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 134VC DO202AA
Description: TVS DIODE 75VWM 134VC DO202AA
товару немає в наявності
В кошику
од. на суму грн.
| LC75A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC DO202AA
Description: TVS DIODE 75VWM 121VC DO202AA
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6105 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.9VWM 14.07VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.44A
Voltage - Reverse Standoff (Typ): 6.9V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.22V
Voltage - Clamping (Max) @ Ipp: 14.07V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6.9VWM 14.07VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 35.44A
Voltage - Reverse Standoff (Typ): 6.9V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.22V
Voltage - Clamping (Max) @ Ipp: 14.07V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N4150S |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
товару немає в наявності
В кошику
од. на суму грн.
| JANS2N4150 |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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| JANTX2N4150 |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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| JAN2N4150S |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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| JANTXV2N4150S |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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од. на суму грн.
| JANHCA2N4150 |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO5
Packaging: Tape & Reel (TR)
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO5
Packaging: Tape & Reel (TR)
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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В кошику
од. на суму грн.
| JANKCA2N4150 |
Виробник: Microchip Technology
Description: TRANS NPN 70V 10A TO5
Packaging: Tape & Reel (TR)
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
Description: TRANS NPN 70V 10A TO5
Packaging: Tape & Reel (TR)
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/394
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В кошику
од. на суму грн.
| MXLRT100KP260CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 512VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 512V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 260VWM 512VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 512V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
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В кошику
од. на суму грн.
| MXLSMBG7.0CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7VWM 12VC SMBG
Packaging: Bulk
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: SMBG (DO-215AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MXLSMLJ120Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO214AB
Description: TVS DIODE 120VWM 193VC DO214AB
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| MXPLAD30KP75Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC PLAD
Description: TVS DIODE 75VWM 121VC PLAD
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| MXRT100KP260A |
|
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 512VC CASE 5A
Description: TVS DIODE 260VWM 512VC CASE 5A
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| MXRT100KP260Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 512VC CASE 5A
Description: TVS DIODE 260VWM 512VC CASE 5A
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| MXRT100KP260CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 512VC CASE 5A
Description: TVS DIODE 260VWM 512VC CASE 5A
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| MXSMLJ90Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
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| MXSMLJ90CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
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| MXSMLJ90CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
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В кошику
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| JANTXV1N6128 |
|
Виробник: Microchip Technology
Description: TVS DIODE 62.2VWM 118.44VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.18A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 74V
Voltage - Clamping (Max) @ Ipp: 118.44V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Description: TVS DIODE 62.2VWM 118.44VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.18A
Voltage - Reverse Standoff (Typ): 62.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 74V
Voltage - Clamping (Max) @ Ipp: 118.44V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
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| JANTX1N6109AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF
Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF
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| M5KP6.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO204AR
Description: TVS DIODE 6VWM 10.3VC DO204AR
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| MART100KP100A |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 197VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 197V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 197VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 197V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MART100KP100Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 197VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 197V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 197VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 197V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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од. на суму грн.