Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (337401) > Сторінка 1457 з 5624
Фото | Назва | Виробник | Інформація |
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MASMCJ7.5Ae3 | Microchip Technology |
Description: TVS DIODE 7.5VWM 12.9VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 116.3A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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PIC16LF723A-I/SO | Microchip Technology |
Description: IC MCU 8BIT 7KB FLASH 28SOIC Packaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 7KB (4K x 14) RAM Size: 192 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 11x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 28-SOIC Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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PIC16LF723A-I/ML | Microchip Technology |
Description: IC MCU 8BIT 7KB FLASH 28QFN Packaging: Tube Package / Case: 28-VQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 7KB (4K x 14) RAM Size: 192 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 11x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 28-QFN (6x6) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
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PIC16LF723A-I/SS | Microchip Technology |
Description: IC MCU 8BIT 7KB FLASH 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 7KB (4K x 14) RAM Size: 192 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: PIC Data Converters: A/D 11x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 28-SSOP Part Status: Active Number of I/O: 25 DigiKey Programmable: Verified |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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MA5KP58CAe3 | Microchip Technology |
Description: TVS DIODE 58VWM 93.6VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 53A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
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MA5KP54CAe3 | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MA5KP58CA | Microchip Technology |
Description: TVS DIODE 58VWM 93.6VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 53A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
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MA5KP6.0A | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 485A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Part Status: Active |
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MA5KP51CAe3 | Microchip Technology |
Description: TVS DIODE 51VWM 82.4VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 61A Voltage - Reverse Standoff (Typ): 51V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 56.7V Voltage - Clamping (Max) @ Ipp: 82.4V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MA5KP54CA | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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24LC32AXT-E/ST | Microchip Technology |
Description: IC EEPROM 32KBIT I2C 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
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24LC32AXT-I/ST | Microchip Technology |
Description: IC EEPROM 32KBIT I2C 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
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24LC32AX-E/ST | Microchip Technology |
Description: IC EEPROM 32KBIT I2C 8TSSOP Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
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24LC32AX-I/ST | Microchip Technology |
Description: IC EEPROM 32KBIT I2C 8TSSOP Packaging: Tube Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
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MSC035SMA170S | Microchip Technology |
Description: MOSFET SIC 1700V 35 MOHM TO-268 Packaging: Bulk Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ) Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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MSC080SMA120B | Microchip Technology |
Description: SICFET N-CH 1200V 37A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V |
на замовлення 142 шт: термін постачання 21-31 дні (днів) |
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MSC035SMA070B4 | Microchip Technology |
Description: TRANS SJT N-CH 700V 77A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ) Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V |
на замовлення 133 шт: термін постачання 21-31 дні (днів) |
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MSC040SMA120B4 | Microchip Technology |
Description: SICFET N-CH 1200V 66A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 323W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 2mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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MSC040SMA120S | Microchip Technology |
Description: SICFET N-CH 1200V 64A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 303W Vgs(th) (Max) @ Id: 2.6V @ 2mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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MSC090SMA070S | Microchip Technology |
Description: SICFET N-CH 700V D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Supplier Device Package: D3Pak Part Status: Active Drain to Source Voltage (Vdss): 700 V |
на замовлення 113 шт: термін постачання 21-31 дні (днів) |
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MSC090SMA070B | Microchip Technology |
Description: SICFET N-CH 700V TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Supplier Device Package: TO-247-3 Part Status: Active Drain to Source Voltage (Vdss): 700 V |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
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MSC050SDA070BCT | Microchip Technology |
Description: DIODE SIL CARB 700V 88A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2034pF @ 1V, 1MHz Current - Average Rectified (Io): 88A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070BCT | Microchip Technology | Description: SIC SBD 700 V 30 A TO-247 |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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MSC050SDA070S | Microchip Technology |
Description: DIODE SIL CARBIDE 700V 88A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2034pF @ 1V, 1MHz Current - Average Rectified (Io): 88A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070K | Microchip Technology |
Description: DIODE SIL CARB 700V 30A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070S | Microchip Technology |
Description: DIODE SIL CARBIDE 700V 60A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 60A Supplier Device Package: D3Pak Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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MSC035SMA070S | Microchip Technology |
Description: MOSFET N-CH 700V D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Power Dissipation (Max): 206W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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MSC035SMA070B | Microchip Technology |
Description: MOSFET N-CH 700V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V |
на замовлення 60 шт: термін постачання 21-31 дні (днів) |
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MSC030SDA070B | Microchip Technology |
Description: DIODE SIL CARBIDE 700V 60A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 1V, 1MHz Current - Average Rectified (Io): 60A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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MSC080SMA120B4 | Microchip Technology |
Description: SICFET N-CH 1200V 37A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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JANTX1N4989US | Microchip Technology |
Description: DIODE ZENER 200V 5W D5B Packaging: Bulk Tolerance: ±5% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 500 Ohms Supplier Device Package: D-5B Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 152 V Grade: Military Qualification: MIL-PRF-19500/356 |
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PIC32MK1024MCF064T-I/MR | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 64QFN Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 27x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
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PIC32MK1024MCF064T-I/MR | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 64QFN Packaging: Cut Tape (CT) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 27x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 49 DigiKey Programmable: Not Verified |
на замовлення 3890 шт: термін постачання 21-31 дні (днів) |
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93C76CT-E/SN15KVAO | Microchip Technology |
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 1K x 8, 512 x 16 DigiKey Programmable: Not Verified |
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93C76C-I/W15K | Microchip Technology | Description: IC EEPROM 8KBIT SPI 3MHZ DIE |
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93C76C-I/S15K | Microchip Technology | Description: IC EEPROM 8KBIT SPI 3MHZ DIE |
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93C76C/WF15K | Microchip Technology | Description: IC EEPROM 8KBIT SPI 3MHZ DIE |
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MIC2564A-1BSM | Microchip Technology |
Description: DUAL SERIAL PCMCIA/CARDBUS POWER Features: Status Flag Packaging: Bulk Package / Case: 24-SSOP (0.209", 5.30mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: Serial Switch Type: PCMCIA Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 1.3Ohm Input Type: Non-Inverting Voltage - Load: 3.3V, 5V, 12V Current - Output (Max): 120mA Ratio - Input:Output: 3:4 Supplier Device Package: 24-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature |
на замовлення 11005 шт: термін постачання 21-31 дні (днів) |
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MIC2564A-0BSM | Microchip Technology |
Description: DUAL SERIAL PCMCIA/CARDBUS POWER Features: Status Flag Packaging: Bulk Package / Case: 24-SSOP (0.209", 5.30mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Interface: Serial Switch Type: PCMCIA Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 1.3Ohm Input Type: Non-Inverting Voltage - Load: 3.3V, 5V, 12V Current - Output (Max): 120mA Ratio - Input:Output: 3:4 Supplier Device Package: 24-SSOP Fault Protection: Current Limiting (Fixed), Over Temperature |
на замовлення 3474 шт: термін постачання 21-31 дні (днів) |
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85HQ035 | Microchip Technology |
Description: DIODE SCHOTTKY 35V 80A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
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51HQ035 | Microchip Technology |
Description: DIODE SCHOTTKY 35V 60A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 60A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
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75HQ035 | Microchip Technology |
Description: SCHOTTKY DIODE Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 80A Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A Current - Reverse Leakage @ Vr: 2 mA @ 35 V |
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GC2532-150A/TR | Microchip Technology | Description: SI SRD NON HERMETIC EPSM SMT |
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VCC1-B3E-12M3500000TR | Microchip Technology | Description: OSCILLATOR CMOS SMD |
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VCC1-B3E-12M3500000 | Microchip Technology | Description: OSCILLATOR CMOS SMD |
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MXLPLAD15KP33A | Microchip Technology | Description: TVS DIODE 33VWM 53.3VC PLAD |
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MX15KP33Ae3 | Microchip Technology | Description: TVS DIODE 33VWM 54.8VC CASE 5A |
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MX5KP33A/TR | Microchip Technology | Description: TVS DIODE 33VWM 53.3VC CASE 5A |
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MX5KP33Ae3 | Microchip Technology | Description: TVS DIODE 33VWM 53.3VC CASE 5A |
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MXLPLAD15KP33Ae3 | Microchip Technology | Description: TVS DIODE 33VWM 53.3VC PLAD |
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MX5KP33A | Microchip Technology | Description: TVS DIODE 33VWM 53.3VC CASE 5A |
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JANTX2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 20-CLCC Mounting Type: Surface Mount Transistor Type: 4 NPN (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 20-CLCC Grade: Military Qualification: MIL-PRF-19500/559 |
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JANTX2N6989U | Microchip Technology | Description: TRANS 4NPN 50V 0.8A 20CLCC |
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Jantxv2N6989U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
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JANTXV2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
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JAN2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
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Jan2N6989U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
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JANS2N6989U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
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JANS2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 4 PNP (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/559 |
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2N6989U/TR | Microchip Technology |
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 20-CLCC Mounting Type: Surface Mount Transistor Type: 4 NPN (Quad) Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: 20-CLCC Grade: Military Qualification: MIL-PRF-19500/559 |
товар відсутній |
MASMCJ7.5Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 116.3A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 116.3A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
PIC16LF723A-I/SO |
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 7KB FLASH 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 32 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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3+ | 102.37 грн |
PIC16LF723A-I/ML |
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 7KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 112.32 грн |
25+ | 99.48 грн |
100+ | 89.47 грн |
PIC16LF723A-I/SS |
Виробник: Microchip Technology
Description: IC MCU 8BIT 7KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Verified
Description: IC MCU 8BIT 7KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 7KB (4K x 14)
RAM Size: 192 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 11x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Verified
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 99.53 грн |
25+ | 87.6 грн |
100+ | 79.47 грн |
MA5KP58CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MA5KP54CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
MA5KP58CA |
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 58VWM 93.6VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MA5KP6.0A |
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 485A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6VWM 10.3VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 485A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MA5KP51CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 51VWM 82.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 51VWM 82.4VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61A
Voltage - Reverse Standoff (Typ): 51V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 56.7V
Voltage - Clamping (Max) @ Ipp: 82.4V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
MA5KP54CA |
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
24LC32AXT-E/ST |
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товар відсутній
24LC32AXT-I/ST |
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товар відсутній
24LC32AX-E/ST |
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товар відсутній
24LC32AX-I/ST |
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товар відсутній
MSC035SMA170S |
Виробник: Microchip Technology
Description: MOSFET SIC 1700V 35 MOHM TO-268
Packaging: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
Description: MOSFET SIC 1700V 35 MOHM TO-268
Packaging: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 2.5mA (Typ)
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 1000 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 2792.43 грн |
25+ | 2479.72 грн |
MSC080SMA120B |
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 142 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 831.76 грн |
25+ | 738.33 грн |
100+ | 603.18 грн |
MSC035SMA070B4 |
Виробник: Microchip Technology
Description: TRANS SJT N-CH 700V 77A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Description: TRANS SJT N-CH 700V 77A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA (Typ)
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 133 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1005.22 грн |
25+ | 893.12 грн |
100+ | 776.42 грн |
MSC040SMA120B4 |
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 66A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 323W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Description: SICFET N-CH 1200V 66A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 323W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1679.16 грн |
25+ | 1490.92 грн |
100+ | 1297.19 грн |
MSC040SMA120S |
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Description: SICFET N-CH 1200V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 303W
Vgs(th) (Max) @ Id: 2.6V @ 2mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1691.95 грн |
25+ | 1503.24 грн |
MSC090SMA070S |
Виробник: Microchip Technology
Description: SICFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: D3Pak
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Description: SICFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Supplier Device Package: D3Pak
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 113 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 573.7 грн |
25+ | 509.3 грн |
100+ | 413.88 грн |
MSC090SMA070B |
Виробник: Microchip Technology
Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
Description: SICFET N-CH 700V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Supplier Device Package: TO-247-3
Part Status: Active
Drain to Source Voltage (Vdss): 700 V
на замовлення 39 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 511.14 грн |
25+ | 453.57 грн |
MSC050SDA070BCT |
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 38 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1431.05 грн |
25+ | 1270.62 грн |
MSC030SDA070BCT |
Виробник: Microchip Technology
Description: SIC SBD 700 V 30 A TO-247
Description: SIC SBD 700 V 30 A TO-247
на замовлення 29 шт:
термін постачання 21-31 дні (днів)MSC050SDA070S |
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARBIDE 700V 88A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 813.27 грн |
25+ | 722.47 грн |
MSC030SDA070K |
Виробник: Microchip Technology
Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Description: DIODE SIL CARB 700V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
на замовлення 119 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 452.85 грн |
25+ | 401.74 грн |
100+ | 362.2 грн |
MSC030SDA070S |
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARBIDE 700V 60A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 539.58 грн |
25+ | 480.13 грн |
100+ | 403.02 грн |
MSC035SMA070S |
Виробник: Microchip Technology
Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Description: MOSFET N-CH 700V D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 206W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1075.6 грн |
25+ | 954.43 грн |
MSC035SMA070B |
Виробник: Microchip Technology
Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
Description: MOSFET N-CH 700V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 1012.33 грн |
25+ | 898.71 грн |
MSC030SDA070B |
Виробник: Microchip Technology
Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
Description: DIODE SIL CARBIDE 700V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 477.73 грн |
25+ | 423.75 грн |
MSC080SMA120B4 |
Виробник: Microchip Technology
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 838 pF @ 1000 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 865.88 грн |
25+ | 768.67 грн |
100+ | 669.43 грн |
JANTX1N4989US |
Виробник: Microchip Technology
Description: DIODE ZENER 200V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Grade: Military
Qualification: MIL-PRF-19500/356
Description: DIODE ZENER 200V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 152 V
Grade: Military
Qualification: MIL-PRF-19500/356
товар відсутній
PIC32MK1024MCF064T-I/MR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
товар відсутній
PIC32MK1024MCF064T-I/MR |
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 27x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, Motor Control PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 49
DigiKey Programmable: Not Verified
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 649.77 грн |
25+ | 573.34 грн |
100+ | 518.98 грн |
93C76CT-E/SN15KVAO |
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT MICROWIRE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
товар відсутній
93C76C-I/W15K |
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
товар відсутній
93C76C-I/S15K |
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
товар відсутній
93C76C/WF15K |
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
Description: IC EEPROM 8KBIT SPI 3MHZ DIE
товар відсутній
MIC2564A-1BSM |
Виробник: Microchip Technology
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 11005 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
198+ | 98.77 грн |
MIC2564A-0BSM |
Виробник: Microchip Technology
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
Description: DUAL SERIAL PCMCIA/CARDBUS POWER
Features: Status Flag
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: Serial
Switch Type: PCMCIA Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 1.3Ohm
Input Type: Non-Inverting
Voltage - Load: 3.3V, 5V, 12V
Current - Output (Max): 120mA
Ratio - Input:Output: 3:4
Supplier Device Package: 24-SSOP
Fault Protection: Current Limiting (Fixed), Over Temperature
на замовлення 3474 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
233+ | 83.82 грн |
85HQ035 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 80A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
51HQ035 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
75HQ035 |
Виробник: Microchip Technology
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 80A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 80 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
товар відсутній
GC2532-150A/TR |
Виробник: Microchip Technology
Description: SI SRD NON HERMETIC EPSM SMT
Description: SI SRD NON HERMETIC EPSM SMT
товар відсутній
VCC1-B3E-12M3500000TR |
Виробник: Microchip Technology
Description: OSCILLATOR CMOS SMD
Description: OSCILLATOR CMOS SMD
товар відсутній
MXLPLAD15KP33A |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Description: TVS DIODE 33VWM 53.3VC PLAD
товар відсутній
MX15KP33Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 54.8VC CASE 5A
Description: TVS DIODE 33VWM 54.8VC CASE 5A
товар відсутній
MX5KP33A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
Description: TVS DIODE 33VWM 53.3VC CASE 5A
товар відсутній
MX5KP33Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC CASE 5A
Description: TVS DIODE 33VWM 53.3VC CASE 5A
товар відсутній
MXLPLAD15KP33Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC PLAD
Description: TVS DIODE 33VWM 53.3VC PLAD
товар відсутній
JANTX2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній
Jantxv2N6989U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній
JANTXV2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній
JAN2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній
Jan2N6989U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній
JANS2N6989U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній
JANS2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній
2N6989U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
Description: TRANSISTOR QUAD SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 20-CLCC
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 20-CLCC
Grade: Military
Qualification: MIL-PRF-19500/559
товар відсутній