Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (336135) > Сторінка 1479 з 5603
Фото | Назва | Виробник | Інформація |
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MX15KP220CAe3 | Microchip Technology | Description: TVS DIODE 220VWM 356VC CASE 5A |
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MA15KP220CA | Microchip Technology | Description: TVS DIODE 220VWM 356VC DO204AR |
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MX15KP220CA | Microchip Technology | Description: TVS DIODE 220VWM 356VC CASE 5A |
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MXL15KP220CAe3 | Microchip Technology | Description: TVS DIODE 220VWM 356VC CASE 5A |
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M15KP220CAe3 | Microchip Technology | Description: TVS DIODE 220VWM 356VC DO204AR |
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MA15KP220CAe3 | Microchip Technology | Description: TVS DIODE 220VWM 356VC DO204AR |
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DSC1001DL1-050.0000T | Microchip Technology | Description: MEMS OSC XO 50.0000MHZ CMOS SMD |
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DSC1001DL2-012.5000T | Microchip Technology |
Description: OSC MEMS LOW PWR LVCMOS Packaging: Tape & Reel (TR) Package / Case: 4-VDFN Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 6.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 12.5 MHz Base Resonator: MEMS |
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DSC1001DL2-049.5000 | Microchip Technology |
Description: MEMS OSC XO 49.5000MHZ CMOS SMD Packaging: Tube Package / Case: 4-SMD, No Lead Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 7.2mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 49.5 MHz Base Resonator: MEMS |
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DSA1001DL3-100.0000VAO | Microchip Technology | Description: MEMS OSC AUTO LP -40C-105C 20PPM |
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DSA1001DL3-030.0000VAO | Microchip Technology | Description: MEMS OSC., AUTOMOTIVE, LOW POWER |
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DSC1001DL1-007.3728T | Microchip Technology | Description: OSC MEMS AUTO -40C-105C SMD |
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DSC1001DL1-007.3728 | Microchip Technology | Description: OSC MEMS AUTO -40C-105C SMD |
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DSA1001DL3-080.0000TVAO | Microchip Technology | Description: OSC MEMS -40C-85C, 50PPM, 2.5X2. |
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DSC1001DL1-004.0000 | Microchip Technology | Description: MEMS OSC XO 4.0000MHZ CMOS SMD |
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DSA1001DL1-012.0000VAO | Microchip Technology | Description: MEMS OSC., AUTOMOTIVE, LOW POWER |
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DSA1001DL2-048.0000TVAO | Microchip Technology | Description: MEMS OSC AUTO LP -40C-105C 25PPM |
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DSA1001DL3-030.0000TVAO | Microchip Technology | Description: MEMS OSC., AUTOMOTIVE, LOW POWER |
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DSA1001DL2-024.5640VAO | Microchip Technology | Description: MEMS OSC AUTO LP -40C-105C 25PPM |
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DSA1001DL1-012.0000TVAO | Microchip Technology | Description: MEMS OSC., AUTOMOTIVE, LOW POWER |
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ATSAMR21G16A-MF | Microchip Technology | Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN |
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ATSAMR21G17A-MF | Microchip Technology |
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Sensitivity: -99dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 4dBm Current - Receiving: 11.3mA ~ 11.8mA Data Rate (Max): 250kbps Current - Transmitting: 7.2mA ~ 13.8mA Supplier Device Package: 48-QFN (7x7) GPIO: 28 Modulation: O-QPSK RF Family/Standard: General ISM > 1GHz Serial Interfaces: I²C, SPI, UART, USART, USB DigiKey Programmable: Not Verified |
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ATSAMR21G16A-MFT | Microchip Technology | Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN |
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ATSAMR21G16A-MFT | Microchip Technology | Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN |
на замовлення 3930 шт: термін постачання 21-31 дні (днів) |
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ATSAMR21G17A-MFT | Microchip Technology |
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Sensitivity: -99dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 4dBm Current - Receiving: 11.3mA ~ 11.8mA Data Rate (Max): 250kbps Current - Transmitting: 7.2mA ~ 13.8mA Supplier Device Package: 48-QFN (7x7) GPIO: 28 Modulation: O-QPSK RF Family/Standard: General ISM > 1GHz Serial Interfaces: I²C, SPI, UART, USART, USB DigiKey Programmable: Not Verified |
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ATSAMR21G17A-MFT | Microchip Technology |
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Sensitivity: -99dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 128kB Flash, 16kB SRAM Type: TxRx + MCU Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.8V ~ 3.6V Power - Output: 4dBm Current - Receiving: 11.3mA ~ 11.8mA Data Rate (Max): 250kbps Current - Transmitting: 7.2mA ~ 13.8mA Supplier Device Package: 48-QFN (7x7) GPIO: 28 Modulation: O-QPSK RF Family/Standard: General ISM > 1GHz Serial Interfaces: I²C, SPI, UART, USART, USB DigiKey Programmable: Not Verified |
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MIC2012PZMTR | Microchip Technology |
Description: USB POWER CONTROLLER Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Function: Controller Interface: USB Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Supply: 22µA Protocol: USB Supplier Device Package: 8-SOIC Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MIC2015-0.8YMLTR | Microchip Technology |
Description: FIXED CURRENT LIMIT POWER DISTRI Features: Slew Rate Controlled Packaging: Bulk Package / Case: 6-VDFN Exposed Pad, 6-MLF® Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.1A Ratio - Input:Output: 1:1 Supplier Device Package: 6-MLF® (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Part Status: Active |
на замовлення 2301 шт: термін постачання 21-31 дні (днів) |
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MIC2013-0.5YMLTR | Microchip Technology |
Description: CURRENT LIMITING CIRCUIT PROTECT Packaging: Bulk Package / Case: 6-VDFN Exposed Pad, 6-MLF® Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: USB Switch Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.1A Ratio - Input:Output: 1:1 Supplier Device Package: 6-MLF® (2x2) Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Part Status: Active |
на замовлення 4085 шт: термін постачання 21-31 дні (днів) |
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MIC2019YM6 | Microchip Technology |
Description: ADJUSTABLE CURRENT LIMIT POWER D Packaging: Bulk Package / Case: SOT-23-6 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 2.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SOT-23-6 Fault Protection: Current Limiting (Adjustable), Over Temperature Part Status: Obsolete |
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JANTX2N3810U | Microchip Technology |
Description: TRANS 2PNP 60V 0.05A Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANSR2N3810U | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Tray Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: 6-SMD |
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JANSR2N3810U/TR | Microchip Technology |
Description: TRANSISTOR DUAL RH SMALL-SIGNAL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: 6-SMD |
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JANTXV2N3810U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANTX2N3810U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JAN2N3810 | Microchip Technology | Description: TRANS 2PNP 60V 0.05A TO78 |
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JAN2N3810U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANS2N3810 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANSF2N3810 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANS2N3810U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: 6-SMD |
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JANKCAR2N3810 | Microchip Technology | Description: TRANSISTOR RH SMALL-SIGNAL BJT |
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JANS2N3810U | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: 6-SMD |
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JANKCA2N3810 | Microchip Technology |
Description: TRANSISTOR SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/336 |
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JANSM2N3810U/TR | Microchip Technology | Description: TRANSISTOR DUAL RH SMALL-SIGNAL |
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JANSR2N3810 | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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2N3810U/TR | Microchip Technology |
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANS2N3810L | Microchip Technology |
Description: PNP TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANSF2N3810L | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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JANSF2N3810U | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: 6-SMD |
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JANHCA2N3810 | Microchip Technology |
Description: TRANSISTOR SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/336 |
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JANSP2N3810U/TR | Microchip Technology | Description: TRANSISTOR DUAL RH SMALL-SIGNAL |
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JANSL2N3810U/TR | Microchip Technology | Description: TRANSISTOR DUAL RH SMALL-SIGNAL |
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MNS2N3810U/TR | Microchip Technology |
Description: DUAL SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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MNS2N3810UP/TR | Microchip Technology |
Description: DUAL SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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MNS2N3810UP | Microchip Technology |
Description: DUAL SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 PNP (Dual) Operating Temperature: -65°C ~ 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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2N2060 | Microchip Technology | Description: NPN TRANSISTOR |
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JANTX2N2060 | Microchip Technology | Description: NPN TRANSISTOR |
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JAN2N2060 | Microchip Technology | Description: NPN LOW POWER SILICON TRANSISTOR |
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ATR4251-PFQY 19 | Microchip Technology |
Description: IC RF AMP BROADCAST RADIO 24QFN Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: AM, FM RF Type: Broadcast Radio Voltage - Supply: 8V ~ 11V Gain: 6dB Current - Supply: 11mA ~ 17mA Noise Figure: 2.8dB Supplier Device Package: 24-QFN (4x4) Part Status: Obsolete |
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ATR4251-PFQY 19 | Microchip Technology |
Description: IC RF AMP BROADCAST RADIO 24QFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: AM, FM RF Type: Broadcast Radio Voltage - Supply: 8V ~ 11V Gain: 6dB Current - Supply: 11mA ~ 17mA Noise Figure: 2.8dB Supplier Device Package: 24-QFN (4x4) Part Status: Obsolete |
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MX15KP220CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC CASE 5A
Description: TVS DIODE 220VWM 356VC CASE 5A
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MA15KP220CA |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
Description: TVS DIODE 220VWM 356VC DO204AR
товар відсутній
MX15KP220CA |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC CASE 5A
Description: TVS DIODE 220VWM 356VC CASE 5A
товар відсутній
MXL15KP220CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC CASE 5A
Description: TVS DIODE 220VWM 356VC CASE 5A
товар відсутній
M15KP220CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
Description: TVS DIODE 220VWM 356VC DO204AR
товар відсутній
MA15KP220CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 220VWM 356VC DO204AR
Description: TVS DIODE 220VWM 356VC DO204AR
товар відсутній
DSC1001DL1-050.0000T |
Виробник: Microchip Technology
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
Description: MEMS OSC XO 50.0000MHZ CMOS SMD
товар відсутній
DSC1001DL2-012.5000T |
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 12.5 MHz
Base Resonator: MEMS
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 12.5 MHz
Base Resonator: MEMS
товар відсутній
DSC1001DL2-049.5000 |
Виробник: Microchip Technology
Description: MEMS OSC XO 49.5000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 7.2mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.5 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 49.5000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 7.2mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.5 MHz
Base Resonator: MEMS
товар відсутній
DSA1001DL3-100.0000VAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LP -40C-105C 20PPM
Description: MEMS OSC AUTO LP -40C-105C 20PPM
товар відсутній
DSA1001DL3-030.0000VAO |
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
товар відсутній
DSC1001DL1-007.3728T |
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Description: OSC MEMS AUTO -40C-105C SMD
товар відсутній
DSC1001DL1-007.3728 |
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Description: OSC MEMS AUTO -40C-105C SMD
товар відсутній
DSA1001DL3-080.0000TVAO |
Виробник: Microchip Technology
Description: OSC MEMS -40C-85C, 50PPM, 2.5X2.
Description: OSC MEMS -40C-85C, 50PPM, 2.5X2.
товар відсутній
DSC1001DL1-004.0000 |
Виробник: Microchip Technology
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
товар відсутній
DSA1001DL1-012.0000VAO |
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
товар відсутній
DSA1001DL2-048.0000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LP -40C-105C 25PPM
Description: MEMS OSC AUTO LP -40C-105C 25PPM
товар відсутній
DSA1001DL3-030.0000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
товар відсутній
DSA1001DL2-024.5640VAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LP -40C-105C 25PPM
Description: MEMS OSC AUTO LP -40C-105C 25PPM
товар відсутній
DSA1001DL1-012.0000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
товар відсутній
ATSAMR21G16A-MF |
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
товар відсутній
ATSAMR21G17A-MF |
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
товар відсутній
ATSAMR21G16A-MFT |
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
товар відсутній
ATSAMR21G16A-MFT |
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
на замовлення 3930 шт:
термін постачання 21-31 дні (днів)ATSAMR21G17A-MFT |
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
товар відсутній
ATSAMR21G17A-MFT |
Виробник: Microchip Technology
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU ISM>1GHZ 48VFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 128kB Flash, 16kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 4dBm
Current - Receiving: 11.3mA ~ 11.8mA
Data Rate (Max): 250kbps
Current - Transmitting: 7.2mA ~ 13.8mA
Supplier Device Package: 48-QFN (7x7)
GPIO: 28
Modulation: O-QPSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: I²C, SPI, UART, USART, USB
DigiKey Programmable: Not Verified
товар відсутній
MIC2012PZMTR |
Виробник: Microchip Technology
Description: USB POWER CONTROLLER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Supply: 22µA
Protocol: USB
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
Description: USB POWER CONTROLLER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Function: Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Supply: 22µA
Protocol: USB
Supplier Device Package: 8-SOIC
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
238+ | 89.57 грн |
MIC2015-0.8YMLTR |
Виробник: Microchip Technology
Description: FIXED CURRENT LIMIT POWER DISTRI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
Description: FIXED CURRENT LIMIT POWER DISTRI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 2301 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1110+ | 19.19 грн |
MIC2013-0.5YMLTR |
Виробник: Microchip Technology
Description: CURRENT LIMITING CIRCUIT PROTECT
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
Description: CURRENT LIMITING CIRCUIT PROTECT
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad, 6-MLF®
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-MLF® (2x2)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
на замовлення 4085 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1110+ | 17.95 грн |
MIC2019YM6 |
Виробник: Microchip Technology
Description: ADJUSTABLE CURRENT LIMIT POWER D
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting (Adjustable), Over Temperature
Part Status: Obsolete
Description: ADJUSTABLE CURRENT LIMIT POWER D
Packaging: Bulk
Package / Case: SOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 2.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting (Adjustable), Over Temperature
Part Status: Obsolete
товар відсутній
JANTX2N3810U |
Виробник: Microchip Technology
Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: TRANS 2PNP 60V 0.05A
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANSR2N3810U |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Tray
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Description: RH SMALL-SIGNAL BJT
Packaging: Tray
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
товар відсутній
JANSR2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 100µA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
товар відсутній
JANTXV2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANTX2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JAN2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANS2N3810 |
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANSF2N3810 |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANS2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
товар відсутній
JANKCAR2N3810 |
Виробник: Microchip Technology
Description: TRANSISTOR RH SMALL-SIGNAL BJT
Description: TRANSISTOR RH SMALL-SIGNAL BJT
товар відсутній
JANS2N3810U |
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
товар відсутній
JANKCA2N3810 |
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
товар відсутній
JANSM2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
товар відсутній
JANSR2N3810 |
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANS2N3810L |
Виробник: Microchip Technology
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: PNP TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANSF2N3810L |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JANSF2N3810U |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: 6-SMD
товар відсутній
JANHCA2N3810 |
Виробник: Microchip Technology
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
Description: TRANSISTOR SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
товар відсутній
JANSP2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
товар відсутній
JANSL2N3810U/TR |
Виробник: Microchip Technology
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
Description: TRANSISTOR DUAL RH SMALL-SIGNAL
товар відсутній
MNS2N3810U/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
MNS2N3810UP/TR |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
MNS2N3810UP |
Виробник: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: DUAL SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
товар відсутній
JAN2N2060 |
Виробник: Microchip Technology
Description: NPN LOW POWER SILICON TRANSISTOR
Description: NPN LOW POWER SILICON TRANSISTOR
товар відсутній
ATR4251-PFQY 19 |
Виробник: Microchip Technology
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
товар відсутній
ATR4251-PFQY 19 |
Виробник: Microchip Technology
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
Description: IC RF AMP BROADCAST RADIO 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: AM, FM
RF Type: Broadcast Radio
Voltage - Supply: 8V ~ 11V
Gain: 6dB
Current - Supply: 11mA ~ 17mA
Noise Figure: 2.8dB
Supplier Device Package: 24-QFN (4x4)
Part Status: Obsolete
товар відсутній