Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343066) > Сторінка 1572 з 5718
| Фото | Назва | Виробник | Інформація |
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-2.50-mm-x-2.00-mm.jpg "DSC2311KI1-R0051T") |
DSC2311KI1-R0051T | Microchip Technology |
 Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KL1-R0054 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KI2-R0057T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
| DSC2311KI1-R0040 | Microchip Technology | Description: MEMS CLOCK GEN DUAL OUTPUT |
товару немає в наявності |
В кошику од. на суму грн. | |||
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DSC2311KI1-R0053T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KM1-R0002 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KI1-R0054 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KL1-R0054T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KI2-R0055T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
| DSC2311KI1-R0040T | Microchip Technology | Description: MEMS CLOCK GEN DUAL OUTPUT |
товару немає в наявності |
В кошику од. на суму грн. | |||
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DSC2311KE2-R0016T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KI2-R0016 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
| DSC2311KL2-R0091T | Microchip Technology | Description: MEMS CLOCK GEN DUAL OUTPUT |
товару немає в наявності |
В кошику од. на суму грн. | |||
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DSC2311KL2-R0048T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KM2-R0050 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KL1-R0002T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KE1-R0047 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KI2-R0008T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KL2-R0048 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KM2-R0002 | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KL2-R0002T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KI1-R0054T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6VDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC2311KI1-R0059T | Microchip Technology |
Description: MEMS OSC XO 2.25V-3.6V 6SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||
~~2-Top.jpg "MSMCJ30A/TR") |
MSMCJ30A/TR | Microchip Technology |
Description: TVS DIODE 30VWM 48.4VC SMCJ Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 31A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: SMCJ (DO-214AB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC6001JI1B-460K800 | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-85C 50P |
товару немає в наявності |
В кошику од. на суму грн. | ||
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DSC6001JI1B-460K800T | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-85C 50P |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N4759AP/TR8 | Microchip Technology |
Description: DIODE ZENER 62V 1W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N4759AG/TR | Microchip Technology |
Description: DIODE ZENER 62V 1W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N4759UR-1 | Microchip Technology |
Description: DIODE ZENER 62V 1W DO213AB Packaging: Bulk Tolerance: ±10% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
| AX500-PQ208I | Microchip Technology |
Description: IC FPGA 115 I/O 208QFP |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||
| AX500-1PQ208I | Microchip Technology |
Description: IC FPGA 115 I/O 208QFP |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||
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MNS1N5819UR-1 | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213AB Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Grade: Military Qualification: MIL-PRF-19500/586 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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MNS1N5819UR-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Grade: Military Qualification: MIL-PRF-19500/586 |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N5913B/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
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1N5913BUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||
| MSCSM120TAM31T3AG | Microchip Technology |
Description: SIC 6N-CH 1200V 89A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM70HM19T3AG | Microchip Technology |
Description: MOSFET 4N-CH 700V 124A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Part Status: Active |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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| MSCSM120AM08T3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.409kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120AM02T6LIAG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 947A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 36mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120HM50T3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 245W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120AM16T1AG | Microchip Technology |
Description: SIC 2N-CH 1200V 173A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120AM042T6LIAG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 495A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM70HM038AG | Microchip Technology |
Description: SIC 4N-CH 700V 464A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.277kW (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 16mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120HM083AG | Microchip Technology |
Description: MOSFET 4N-CH 1200V 251A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120HM063AG | Microchip Technology |
Description: MOSFET 4N-CH 1200V 333A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 873W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120AM11T3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.067kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM70AM07T3AG | Microchip Technology |
Description: MOSFET 2N-CH 700V 353A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 988W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| MSCSM70AM10T3AG | Microchip Technology |
Description: MOSFET 2N-CH 700V 241A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 690W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Part Status: Active |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| MSCSM120HM16T3AG | Microchip Technology |
Description: SIC 4N-CH 1200V 173A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
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MSCSM70AM19T1AG | Microchip Technology |
Description: MOSFET 2N-CH 700V 124A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Part Status: Active |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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| MSCSM120AM31T1AG | Microchip Technology |
Description: SIC 2N-CH 1200V 89A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM70AM025T6AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.882kW (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM70AM025T6LIAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6L1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.882kW (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120AM03T6LIAG | Microchip Technology |
Description: MOSFET 2N-CH 1200V 805A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.215kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 30mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120HM31T3AG | Microchip Technology |
Description: SIC 4N-CH 1200V 89A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120AM027T6AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 27mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM70HM05AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 966W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM70TAM10TPAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 674W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
| MSCSM120TAM11TPAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||
 |
DSC6083CI2A-307K000T | Microchip Technology |
Description: MEMS OSC XO 307.0000KHZ CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 1.3mA (Typ) Height - Seated (Max): 0.035" (0.90mm) Part Status: Obsolete Frequency: 307 kHz Base Resonator: MEMS Supplier Device Package: 4-VDFN (3.2x2.5) |
товару немає в наявності |
В кошику од. на суму грн. |
| DSC2311KI1-R0051T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KL1-R0054 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI2-R0057T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI1-R0040 |
Виробник: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
Description: MEMS CLOCK GEN DUAL OUTPUT
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI1-R0053T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KM1-R0002 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI1-R0054 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KL1-R0054T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI2-R0055T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI1-R0040T |
Виробник: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
Description: MEMS CLOCK GEN DUAL OUTPUT
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KE2-R0016T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI2-R0016 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KL2-R0091T |
Виробник: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
Description: MEMS CLOCK GEN DUAL OUTPUT
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KL2-R0048T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KM2-R0050 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KL1-R0002T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KE1-R0047 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI2-R0008T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KL2-R0048 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KM2-R0002 |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KL2-R0002T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI1-R0054T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товару немає в наявності
В кошику
од. на суму грн.
| DSC2311KI1-R0059T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товару немає в наявності
В кошику
од. на суму грн.
| MSMCJ30A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| DSC6001JI1B-460K800 |
|
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
товару немає в наявності
В кошику
од. на суму грн.
| DSC6001JI1B-460K800T |
|
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
товару немає в наявності
В кошику
од. на суму грн.
| 1N4759AP/TR8 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 62V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: DIODE ZENER 62V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4759AG/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 62V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: DIODE ZENER 62V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4759UR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 62V 1W DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: DIODE ZENER 62V 1W DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товару немає в наявності
В кошику
од. на суму грн.
| AX500-PQ208I |
|
Виробник: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
Description: IC FPGA 115 I/O 208QFP
на замовлення 33 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| AX500-1PQ208I |
|
Виробник: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
Description: IC FPGA 115 I/O 208QFP
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MNS1N5819UR-1 |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товару немає в наявності
В кошику
од. на суму грн.
| MNS1N5819UR-1/TR |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товару немає в наявності
В кошику
од. на суму грн.
| 1N5913B/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товару немає в наявності
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| 1N5913BUR-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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| MSCSM120TAM31T3AG |
|
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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| MSCSM70HM19T3AG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
Description: MOSFET 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 15974.32 грн |
| MSCSM120AM08T3AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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В кошику
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| MSCSM120AM02T6LIAG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 947A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 947A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
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В кошику
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| MSCSM120HM50T3AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
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В кошику
од. на суму грн.
| MSCSM120AM16T1AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Description: SIC 2N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
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В кошику
од. на суму грн.
| MSCSM120AM042T6LIAG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
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В кошику
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| MSCSM70HM038AG |
|
Виробник: Microchip Technology
Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
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В кошику
од. на суму грн.
| MSCSM120HM083AG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 251A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Description: MOSFET 4N-CH 1200V 251A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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В кошику
од. на суму грн.
| MSCSM120HM063AG |
|
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 333A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
Description: MOSFET 4N-CH 1200V 333A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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В кошику
од. на суму грн.
| MSCSM120AM11T3AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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В кошику
од. на суму грн.
| MSCSM70AM07T3AG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
Description: MOSFET 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 22234.46 грн |
| MSCSM70AM10T3AG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
Description: MOSFET 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 16188.65 грн |
| MSCSM120HM16T3AG |
|
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Description: SIC 4N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MSCSM70AM19T1AG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
Description: MOSFET 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 21 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7918.74 грн |
| MSCSM120AM31T1AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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| MSCSM70AM025T6AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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| MSCSM70AM025T6LIAG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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од. на суму грн.
| MSCSM120AM03T6LIAG |
|
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 805A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
Description: MOSFET 2N-CH 1200V 805A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
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| MSCSM120HM31T3AG |
|
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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| MSCSM120AM027T6AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
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| MSCSM70HM05AG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
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| MSCSM70TAM10TPAG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
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| MSCSM120TAM11TPAG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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| DSC6083CI2A-307K000T |
|
Виробник: Microchip Technology
Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Obsolete
Frequency: 307 kHz
Base Resonator: MEMS
Supplier Device Package: 4-VDFN (3.2x2.5)
Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Obsolete
Frequency: 307 kHz
Base Resonator: MEMS
Supplier Device Package: 4-VDFN (3.2x2.5)
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