Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338623) > Сторінка 1572 з 5644
| Фото | Назва | Виробник | Інформація |
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SMAJ33CAE3/TR13 | Microchip Technology |
 Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
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SMAJ33CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
на замовлення 4560 шт: термін постачання 21-31 дні (днів) |
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| DSA6102MI3B-038.4000TVAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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| DSA6102MI3B-038.4000VAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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VSC8489YJU-17 | Microchip Technology |
Description: IC TELECOM INTERFACE 196FCBGA |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
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1N4154-1/TR | Microchip Technology |
Description: DIODE GEN PURP 35V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
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1N4154-1E3 | Microchip Technology |
Description: DIODE GEN PURP 35V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
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| JANTXV2N7368 | Microchip Technology |
Description: TRANS NPN 80V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 115 W |
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| JANTXV2N7372 | Microchip Technology |
Description: TRANS PNP 80V 50UA TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 4 W |
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| JAN2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Grade: Military Qualification: MIL-PRF-19500/623 |
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| JANTX2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Grade: Military Qualification: MIL-PRF-19500/623 |
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| JANS2N7373 | Microchip Technology |
Description: TRANS NPN 80V 50UA TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 4 W |
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| 2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Grade: Military Qualification: MIL-PRF-19500/623 |
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| MS1N6659R | Microchip Technology | Description: UFR,FRR |
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| MS1N6659 | Microchip Technology | Description: UFR,FRR |
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| MS1N6673 | Microchip Technology | Description: UFR,FRR |
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| MS1N6672 | Microchip Technology |
Description: DIODE ARRAY GP 300V 15A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-254AA Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V |
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| 1N6767 | Microchip Technology | Description: UFR,FRR |
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| MS1N6674R | Microchip Technology | Description: UFR,FRR |
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| 1N6674 | Microchip Technology |
Description: DIODE GEN PURP 500V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
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| 1N6766R | Microchip Technology | Description: UFR,FRR |
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| 2N7377 | Microchip Technology | Description: POWER BJT |
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| JANTX1N6674 | Microchip Technology |
Description: DIODE GEN PURP 500V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
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| 1N6767R | Microchip Technology | Description: UFR,FRR |
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| JAN1N6673 | Microchip Technology | Description: RECTIFIER |
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| JANTX1N6673R | Microchip Technology | Description: RECTIFIER |
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| 1N6766 | Microchip Technology | Description: UFR,FRR |
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| 1N6764 | Microchip Technology |
Description: DIODE GEN PURP 150V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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| Jantx1N6658 | Microchip Technology | Description: RECTIFIER |
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| 1N6659R | Microchip Technology |
Description: DIODE GEN PURP 200V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| 1N6657R | Microchip Technology |
Description: RECTIFIER DIODE |
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| JANTXV1N6672 | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Grade: Military Qualification: MIL-PRF-19500/617 |
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| 2N7376 | Microchip Technology | Description: POWER BJT |
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| JAN1N6672 | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Grade: Military Qualification: MIL-PRF-19500/617 |
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| 1N6657 | Microchip Technology |
Description: RECTIFIER DIODE |
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| 1N6763R | Microchip Technology |
Description: DIODE GEN PURP 100V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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| 1N6764R | Microchip Technology |
Description: RECTIFIER DIODE |
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| JANTXV1N6672R | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Grade: Military Qualification: MIL-PRF-19500/617 |
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| JANTX1N5653A | Microchip Technology |
Description: TVS DIODE 58.1VWM 92VC DO13 |
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DSC6013MI1A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
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DSC6112JE1A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
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DSC6112CI1A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
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DSC6111HI2A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
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DSC6011CE2A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
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DSC6011HI2A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
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DSC6112HI2A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
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3258UPC32IXS | Microchip Technology |
Description: SMARTRAID ULTRA 3258P-32I /E SIN Packaging: Bulk Interface: PCI Express Type: RAID Adapter Part Status: Active Number of Ports: 32 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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25LC320A-H/SN16KVAO | Microchip Technology |
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 150°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
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| JANTXV2N3879P | Microchip Technology | Description: POWER BJT |
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| 2N3879A | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A Current - Collector Cutoff (Max): 25mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V Supplier Device Package: TO-66 (TO-213AA) Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 75 V Power - Max: 35 W |
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| 2N4301 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Mounting Type: Stud Mount Transistor Type: NPN Supplier Device Package: TO-61 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 87 W |
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| MSCSM120AM042D3AG | Microchip Technology |
Description: SIC 2N-CH 1200V 495A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Part Status: Active |
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| VCD2-203-44M7360000 | Microchip Technology |
Description: VCD2-203-44M7360000 Packaging: Tube Package / Case: 4-SMD, No Lead Size / Dimension: 0.567" L x 0.378" W (14.40mm x 9.60mm) Mounting Type: Surface Mount Output: PECL Type: XO (Standard) Current - Supply (Max): 100mA Height - Seated (Max): 0.217" (5.50mm) Part Status: Active Frequency: 44.736 MHz Base Resonator: Crystal |
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MSCSM120DAM31CTBL1NG | Microchip Technology |
Description: PM-MOSFET-SIC-SBD-BL1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Power Dissipation (Max): 310W Vgs(th) (Max) @ Id: 2.8V @ 1mA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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MSCSM170HM23CT3AG | Microchip Technology |
Description: SIC 4N-CH 1700V 124A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 602W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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MSCSM170TLM15CAG | Microchip Technology |
Description: SIC 4N-CH 1700V 179A SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 843W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Supplier Device Package: SP6C Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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MSCSM170AM11CT3AG | Microchip Technology |
Description: SIC 2N-CH 1700V 240A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.14kW (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Part Status: Active |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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MSCSM170TLM11CAG | Microchip Technology |
Description: SIC 4N-CH 1700V 238A SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1114W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Supplier Device Package: SP6C Part Status: Active |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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| 1N4704 | Microchip Technology |
Description: DIODE ZENER |
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| 1N4704UR-1 | Microchip Technology |
Description: DIODE ZENER |
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| SMAJ33CAE3/TR13 |
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Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| SMAJ33CAE3/TR13 |
|
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 4560 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 12.25 грн |
| 100+ | 10.25 грн |
| DSA6102MI3B-038.4000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
| DSA6102MI3B-038.4000VAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
| VSC8489YJU-17 |
|
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 196FCBGA
Description: IC TELECOM INTERFACE 196FCBGA
на замовлення 323 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4821.39 грн |
| 25+ | 4230.63 грн |
| 1N4154-1/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
| 1N4154-1E3 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE GEN PURP 35V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
товар відсутній
| JANTXV2N7368 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
товар відсутній
| JANTXV2N7372 |
Виробник: Microchip Technology
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
товар відсутній
| JAN2N7371 |
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
товар відсутній
| JANTX2N7371 |
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
товар відсутній
| JANS2N7373 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
товар відсутній
| 2N7371 |
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
товар відсутній
| MS1N6672 |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
товар відсутній
| 1N6674 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
| JANTX1N6674 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
| 1N6764 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
| 1N6659R |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| JANTXV1N6672 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
товар відсутній
| JAN1N6672 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
товар відсутній
| 1N6763R |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| JANTXV1N6672R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
товар відсутній
| DSC6013MI1A-PROGRAMMABLE |
|
Виробник: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
товар відсутній
| DSC6112JE1A-PROGRAMMABLE |
|
Виробник: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
товар відсутній
| DSC6112CI1A-PROGRAMMABLE |
|
Виробник: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
товар відсутній
| DSC6111HI2A-PROGRAMMABLE |
|
Виробник: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
товар відсутній
| DSC6011CE2A-PROGRAMMABLE |
|
Виробник: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
товар відсутній
| DSC6011HI2A-PROGRAMMABLE |
|
Виробник: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
товар відсутній
| DSC6112HI2A-PROGRAMMABLE |
|
Виробник: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
товар відсутній
| 3258UPC32IXS |
Виробник: Microchip Technology
Description: SMARTRAID ULTRA 3258P-32I /E SIN
Packaging: Bulk
Interface: PCI Express
Type: RAID Adapter
Part Status: Active
Number of Ports: 32
Description: SMARTRAID ULTRA 3258P-32I /E SIN
Packaging: Bulk
Interface: PCI Express
Type: RAID Adapter
Part Status: Active
Number of Ports: 32
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 152725.59 грн |
| 25LC320A-H/SN16KVAO |
|
Виробник: Microchip Technology
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товар відсутній
| 2N3879A |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
товар відсутній
| 2N4301 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 87 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 87 W
товар відсутній
| MSCSM120AM042D3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 495A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
Description: SIC 2N-CH 1200V 495A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
товар відсутній
| VCD2-203-44M7360000 |
|
Виробник: Microchip Technology
Description: VCD2-203-44M7360000
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.567" L x 0.378" W (14.40mm x 9.60mm)
Mounting Type: Surface Mount
Output: PECL
Type: XO (Standard)
Current - Supply (Max): 100mA
Height - Seated (Max): 0.217" (5.50mm)
Part Status: Active
Frequency: 44.736 MHz
Base Resonator: Crystal
Description: VCD2-203-44M7360000
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.567" L x 0.378" W (14.40mm x 9.60mm)
Mounting Type: Surface Mount
Output: PECL
Type: XO (Standard)
Current - Supply (Max): 100mA
Height - Seated (Max): 0.217" (5.50mm)
Part Status: Active
Frequency: 44.736 MHz
Base Resonator: Crystal
товар відсутній
| MSCSM120DAM31CTBL1NG |
|
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SBD-BL1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 310W
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Description: PM-MOSFET-SIC-SBD-BL1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 310W
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7726.61 грн |
| MSCSM170HM23CT3AG |
Виробник: Microchip Technology
Description: SIC 4N-CH 1700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 602W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Part Status: Active
Description: SIC 4N-CH 1700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 602W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 40545.62 грн |
| MSCSM170TLM15CAG |
Виробник: Microchip Technology
Description: SIC 4N-CH 1700V 179A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 843W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Supplier Device Package: SP6C
Part Status: Active
Description: SIC 4N-CH 1700V 179A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 843W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Supplier Device Package: SP6C
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 49548.72 грн |
| MSCSM170AM11CT3AG |
|
Виробник: Microchip Technology
Description: SIC 2N-CH 1700V 240A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.14kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Part Status: Active
Description: SIC 2N-CH 1700V 240A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.14kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 36682.32 грн |
| MSCSM170TLM11CAG |
Виробник: Microchip Technology
Description: SIC 4N-CH 1700V 238A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1114W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Supplier Device Package: SP6C
Part Status: Active
Description: SIC 4N-CH 1700V 238A SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1114W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Supplier Device Package: SP6C
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 59505.58 грн |