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JANTX1N757CUR-1 JANTX1N757CUR-1 Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 9.1V 500MW DO213AA
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dsPIC33EP128GS704T-I/PT dsPIC33EP128GS704T-I/PT Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 128KB FLASH 44TQFP
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dsPIC33EP128GS704T-I/PT dsPIC33EP128GS704T-I/PT Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 128KB FLASH 44TQFP
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dsPIC33EP128GS704-I/ML dsPIC33EP128GS704-I/ML Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 128KB FLASH 44QFN
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dsPIC33EP128GS704-I/PT dsPIC33EP128GS704-I/PT Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 128KB FLASH 44TQFP
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dsPIC33EP128GS704-E/PT dsPIC33EP128GS704-E/PT Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 128KB FLASH 44TQFP
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JANTXV2N3716 JANTXV2N3716 Microchip Technology Description: TRANS NPN 80V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/408
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JANTX2N3715 JANTX2N3715 Microchip Technology Description: TRANS NPN 60V 0.001A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Grade: Military
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/408
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2N3715 2N3715 Microchip Technology Description: TRANS NPN 60V 0.001A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
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2N3719 2N3719 Microchip Technology 10062-msc1026-datasheet Description: TRANS PNP 40V 3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 1.5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 6 W
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JANTXV2N3716P Microchip Technology Description: POWER BJT
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UM2106B Microchip Technology Description: SI PPIN HERMETIC GLASS AXIAL
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JANTXV1N6154A JANTXV1N6154A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 25.1VWM 45.7VC C AXIAL
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JANTXV1N6148A JANTXV1N6148A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 13.7VWM 25.1VC C AXIAL
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JANTXV1N6146A JANTXV1N6146A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 11.4VWM 21VC C AXIAL
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JANTXV1N6150A JANTXV1N6150A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 16.7VWM 30.5VC C AXIAL
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JANTXV1N6149A JANTXV1N6149A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 15.2VWM 27.7VC C AXIAL
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JANTXV1N6152A JANTXV1N6152A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 20.6VWM 37.4VC C AXIAL
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JANTXV1N6147A JANTXV1N6147A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 12.2VWM 22.3VC C AXIAL
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JANTXV1N6151A JANTXV1N6151A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 18.2VWM 33.3VC C AXIAL
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JANTXV1N6153A JANTXV1N6153A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 22.8VWM 41.6VC C AXIAL
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MSMCG30AE3/TR MSMCG30AE3/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCG30A/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCG30A/TR MSMCG30A/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCG30A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
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MSMCG30A MSMCG30A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCG30A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
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MSMCG30Ae3 MSMCG30Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCG30A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCG30Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCG30Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
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MXSMCG30Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCG
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EPS15HR2 EPS15HR2 Microchip Technology Description: TVS DIODE 15VWM 26V AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: A, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
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24AA025E48T-E/OT 24AA025E48T-E/OT Microchip Technology 24AA02E48-24AA025E48-24AA02E64-24AA025E64-Data-Sheet-20002124H.pdf Description: IC EEPROM 2KBIT I2C SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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24AA025E48T-E/OT 24AA025E48T-E/OT Microchip Technology 24AA02E48-24AA025E48-24AA02E64-24AA025E64-Data-Sheet-20002124H.pdf Description: IC EEPROM 2KBIT I2C SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
10+33.80 грн
25+31.69 грн
100+30.92 грн
Мінімальне замовлення: 10
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SY58602UMG-TR SY58602UMG-TR Microchip Technology sy58602u.pdf Description: IC LDRVR/RCVR LVPECL 400MV 8MLF
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
на замовлення 11906 шт:
термін постачання 21-31 дні (днів)
42+592.71 грн
Мінімальне замовлення: 42
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1N3064/TR 1N3064/TR Microchip Technology Description: DIODE STANDARD REV 50V 75MA DO7
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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EV36W50A EV36W50A Microchip Technology EV36W50A-WFI32-IoT-Board-Users-Guide-DS50003262.pdf Description: WFI32-IOT BOARD
Packaging: Bulk
For Use With/Related Products: WFI32E01PC, PIC32MZW1
Frequency: 2.4GHz
Type: Transceiver; 802.11 b/g/n (Wi-Fi, WiFi, WLAN)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: WFI32E01PC, PIC32MZW1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+6657.48 грн
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PIC16F1709T-I/ML PIC16F1709T-I/ML Microchip Technology 40001708A.pdf Description: IC MCU 8BIT 14KB FLASH 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
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PIC16F1709T-I/ML PIC16F1709T-I/ML Microchip Technology 40001708A.pdf Description: IC MCU 8BIT 14KB FLASH 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
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DSA612RA2A-01TRVAO Microchip Technology Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tube
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2.5x2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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2N5290 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 116 W
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2N5291 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 116 W
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JANS1N5294-1 JANS1N5294-1 Microchip Technology Description: DIODE CUR REG 100V 825UA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 825µA
Voltage - Limiting (Max): 1.2V
Grade: Military
Qualification: MIL-PRF-19500/463
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JANTX1N5297UR-1 JANTX1N5297UR-1 Microchip Technology Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
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2N3054 Microchip Technology 2N3054.pdf Description: POWER BJT
Packaging: Bulk
Part Status: Active
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1N4764UR-1 1N4764UR-1 Microchip Technology Description: DIODE ZENER 100V 1W DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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DSA6101JA2B-500K000TV05 DSA6101JA2B-500K000TV05 Microchip Technology DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf Description: MEMS OSC., AUTOMOTIVE, LOW POWER
Packaging: Tape & Reel (TR)
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 500 kHz
Base Resonator: MEMS
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VXM9-1DJ-09-32M0000000TR VXM9-1DJ-09-32M0000000TR Microchip Technology Description: VXM9-1DJ-09-32M0000000TR
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VXM9-1DJ-09-32M0000000 VXM9-1DJ-09-32M0000000 Microchip Technology Description: VXM9-1DJ-09-32M0000000
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1N5238 1N5238 Microchip Technology 1N5225-1N5267%20N0187%20REV.B.pdf Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.2 V
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1N5238/TR 1N5238/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.2 V
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MX554EBC180M000-TR Microchip Technology MX554EBC180M000.pdf Description: 180MHZ LVCMOS
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MX554EBC180M000 Microchip Technology MX554EBC180M000.pdf Description: OSC 180MHZ LVCMOS
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2N5069 2N5069 Microchip Technology Description: TRANS NPN 80V 5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 87 W
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24LC04BHT-I/SN 24LC04BHT-I/SN Microchip Technology 24AA04H-24LC04BH-24FC04H-4K-I2C-Serial-EEPROM-With-Half-Array-Write-Protect-20002119C.pdf Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
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24LC04BHT-I/SN 24LC04BHT-I/SN Microchip Technology 24AA04H-24LC04BH-24FC04H-4K-I2C-Serial-EEPROM-With-Half-Array-Write-Protect-20002119C.pdf Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
на замовлення 2856 шт:
термін постачання 21-31 дні (днів)
14+24.73 грн
Мінімальне замовлення: 14
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MXRT100KP250A MXRT100KP250A Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 250VWM 493VC CASE 5A
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DSC1001CE1-007.3728T Microchip Technology Description: OSC MEMS LOW PWR LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 7.3728 MHz
Base Resonator: MEMS
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DSC1001CE1-007.3728 Microchip Technology Description: OSC MEMS LOW PWR LVCMOS
Packaging: Tube
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 7.3728 MHz
Base Resonator: MEMS
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JANTX1N757CUR-1 5907-1n746aur-1n4370aur-datasheet
JANTX1N757CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO213AA
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dsPIC33EP128GS704T-I/PT dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP128GS704T-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 44TQFP
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dsPIC33EP128GS704T-I/PT dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP128GS704T-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 44TQFP
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dsPIC33EP128GS704-I/ML dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP128GS704-I/ML
Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 44QFN
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dsPIC33EP128GS704-I/PT dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP128GS704-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 44TQFP
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dsPIC33EP128GS704-E/PT dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP128GS704-E/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 44TQFP
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JANTXV2N3716
JANTXV2N3716
Виробник: Microchip Technology
Description: TRANS NPN 80V 10A TO-3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Grade: Military
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/408
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JANTX2N3715
JANTX2N3715
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.001A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Grade: Military
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
Qualification: MIL-PRF-19500/408
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2N3715
2N3715
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.001A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 5 W
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2N3719 10062-msc1026-datasheet
2N3719
Виробник: Microchip Technology
Description: TRANS PNP 40V 3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 1.5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 6 W
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JANTXV2N3716P
Виробник: Microchip Technology
Description: POWER BJT
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UM2106B
Виробник: Microchip Technology
Description: SI PPIN HERMETIC GLASS AXIAL
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JANTXV1N6154A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6154A
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC C AXIAL
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JANTXV1N6148A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6148A
Виробник: Microchip Technology
Description: TVS DIODE 13.7VWM 25.1VC C AXIAL
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JANTXV1N6146A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6146A
Виробник: Microchip Technology
Description: TVS DIODE 11.4VWM 21VC C AXIAL
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JANTXV1N6150A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6150A
Виробник: Microchip Technology
Description: TVS DIODE 16.7VWM 30.5VC C AXIAL
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JANTXV1N6149A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6149A
Виробник: Microchip Technology
Description: TVS DIODE 15.2VWM 27.7VC C AXIAL
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JANTXV1N6152A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6152A
Виробник: Microchip Technology
Description: TVS DIODE 20.6VWM 37.4VC C AXIAL
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JANTXV1N6147A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6147A
Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 22.3VC C AXIAL
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JANTXV1N6151A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6151A
Виробник: Microchip Technology
Description: TVS DIODE 18.2VWM 33.3VC C AXIAL
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JANTXV1N6153A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6153A
Виробник: Microchip Technology
Description: TVS DIODE 22.8VWM 41.6VC C AXIAL
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MSMCG30AE3/TR 10561-msmc-datasheet
MSMCG30AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCG30A/TR 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCG30A/TR 10561-msmc-datasheet
MSMCG30A/TR
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCG30A 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
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MSMCG30A 10561-msmc-datasheet
MSMCG30A
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXSMCG30A 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
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MSMCG30Ae3 10561-msmc-datasheet
MSMCG30Ae3
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCG30A 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMCG30Ae3 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCG30Ae3 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
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MXSMCG30Ae3 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCG
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EPS15HR2
EPS15HR2
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 26V AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33.9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: A, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
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24AA025E48T-E/OT 24AA02E48-24AA025E48-24AA02E64-24AA025E64-Data-Sheet-20002124H.pdf
24AA025E48T-E/OT
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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24AA025E48T-E/OT 24AA02E48-24AA025E48-24AA02E64-24AA025E64-Data-Sheet-20002124H.pdf
24AA025E48T-E/OT
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 1970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.80 грн
25+31.69 грн
100+30.92 грн
Мінімальне замовлення: 10
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SY58602UMG-TR sy58602u.pdf
SY58602UMG-TR
Виробник: Microchip Technology
Description: IC LDRVR/RCVR LVPECL 400MV 8MLF
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Bits: 1
Logic Type: Differential Receiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 8-MLF® (2x2)
Part Status: Active
на замовлення 11906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
42+592.71 грн
Мінімальне замовлення: 42
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1N3064/TR
1N3064/TR
Виробник: Microchip Technology
Description: DIODE STANDARD REV 50V 75MA DO7
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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EV36W50A EV36W50A-WFI32-IoT-Board-Users-Guide-DS50003262.pdf
EV36W50A
Виробник: Microchip Technology
Description: WFI32-IOT BOARD
Packaging: Bulk
For Use With/Related Products: WFI32E01PC, PIC32MZW1
Frequency: 2.4GHz
Type: Transceiver; 802.11 b/g/n (Wi-Fi, WiFi, WLAN)
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Utilized IC / Part: WFI32E01PC, PIC32MZW1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6657.48 грн
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PIC16F1709T-I/ML 40001708A.pdf
PIC16F1709T-I/ML
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
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PIC16F1709T-I/ML 40001708A.pdf
PIC16F1709T-I/ML
Виробник: Microchip Technology
Description: IC MCU 8BIT 14KB FLASH 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 14KB (8K x 14)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: PIC
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 20-QFN (4x4)
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
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DSA612RA2A-01TRVAO
Виробник: Microchip Technology
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tube
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2.5x2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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2N5290
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 116 W
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2N5291
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 5mA
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 116 W
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JANS1N5294-1
JANS1N5294-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 825UA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 825µA
Voltage - Limiting (Max): 1.2V
Grade: Military
Qualification: MIL-PRF-19500/463
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JANTX1N5297UR-1
JANTX1N5297UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.1MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.1mA
Voltage - Limiting (Max): 1.35V
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2N3054 2N3054.pdf
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Part Status: Active
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1N4764UR-1
1N4764UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 100V 1W DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 76 V
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DSA6101JA2B-500K000TV05 DSA61xx-Ultra-Small-Low-Power-MEMS-Oscillator-for-Automotive-DS20006222A.pdf
DSA6101JA2B-500K000TV05
Виробник: Microchip Technology
Description: MEMS OSC., AUTOMOTIVE, LOW POWER
Packaging: Tape & Reel (TR)
Package / Case: 4-VLGA
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 500 kHz
Base Resonator: MEMS
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VXM9-1DJ-09-32M0000000TR
VXM9-1DJ-09-32M0000000TR
Виробник: Microchip Technology
Description: VXM9-1DJ-09-32M0000000TR
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VXM9-1DJ-09-32M0000000
VXM9-1DJ-09-32M0000000
Виробник: Microchip Technology
Description: VXM9-1DJ-09-32M0000000
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1N5238 1N5225-1N5267%20N0187%20REV.B.pdf
1N5238
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.2 V
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1N5238/TR
1N5238/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.2 V
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MX554EBC180M000-TR MX554EBC180M000.pdf
Виробник: Microchip Technology
Description: 180MHZ LVCMOS
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MX554EBC180M000 MX554EBC180M000.pdf
Виробник: Microchip Technology
Description: OSC 180MHZ LVCMOS
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2N5069
2N5069
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 87 W
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24LC04BHT-I/SN 24AA04H-24LC04BH-24FC04H-4K-I2C-Serial-EEPROM-With-Half-Array-Write-Protect-20002119C.pdf
24LC04BHT-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
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24LC04BHT-I/SN 24AA04H-24LC04BH-24FC04H-4K-I2C-Serial-EEPROM-With-Half-Array-Write-Protect-20002119C.pdf
24LC04BHT-I/SN
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT I2C 400KHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8 x 2
DigiKey Programmable: Not Verified
на замовлення 2856 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+24.73 грн
Мінімальне замовлення: 14
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MXRT100KP250A 77294-mrt100kp-pdf
MXRT100KP250A
Виробник: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
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DSC1001CE1-007.3728T
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 7.3728 MHz
Base Resonator: MEMS
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DSC1001CE1-007.3728
Виробник: Microchip Technology
Description: OSC MEMS LOW PWR LVCMOS
Packaging: Tube
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.5mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 7.3728 MHz
Base Resonator: MEMS
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