Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (332303) > Сторінка 1570 з 5539
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||
---|---|---|---|---|---|---|---|---|---|---|---|
MXP4KE170CAe3 | Microchip Technology | Description: TVS DIODE 145VWM 234VC DO204AL |
товар відсутній |
||||||||
MXP4KE180CA | Microchip Technology | Description: TVS DIODE 154VWM 246VC DO204AL |
товар відсутній |
||||||||
MXP4KE100A | Microchip Technology | Description: TVS DIODE 85.5VWM 137VC DO204AL |
товар відсутній |
||||||||
MXP4KE30CAe3 | Microchip Technology | Description: TVS DIODE 25.6VWM 41.4VC DO204AL |
товар відсутній |
||||||||
MXP4KE350Ae3 | Microchip Technology | Description: TVS DIODE 300VWM 482VC DO204AL |
товар відсутній |
||||||||
MXP4KE43Ae3 | Microchip Technology | Description: TVS DIODE 36.8VWM 59.3VC DO204AL |
товар відсутній |
||||||||
MXP4KE110CAe3 | Microchip Technology | Description: TVS DIODE 94VWM 152VC DO204AL |
товар відсутній |
||||||||
MXP4KE24CAe3 | Microchip Technology | Description: TVS DIODE 20.5VWM 33.2VC DO204AL |
товар відсутній |
||||||||
MXP4KE9.1CA | Microchip Technology | Description: TVS DIODE 7.78VWM 13.4VC DO204AL |
товар відсутній |
||||||||
MXP4KE110A | Microchip Technology | Description: TVS DIODE 94VWM 152VC DO204AL |
товар відсутній |
||||||||
MXP4KE120Ae3 | Microchip Technology | Description: TVS DIODE 102VWM 165VC DO204AL |
товар відсутній |
||||||||
MXP4KE11CA | Microchip Technology | Description: TVS DIODE 9.4VWM 15.6VC DO204AL |
товар відсутній |
||||||||
MXP4KE24Ae3 | Microchip Technology | Description: TVS DIODE 20.5VWM 33.2VC DO204AL |
товар відсутній |
||||||||
MXP4KE56CA | Microchip Technology | Description: TVS DIODE 47.8VWM 77VC DO204AL |
товар відсутній |
||||||||
MXP4KE12CA | Microchip Technology |
Description: TVS DIODE 10.2VWM 16.7VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24A Voltage - Reverse Standoff (Typ): 10.2V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
товар відсутній |
||||||||
MXP4KE170CA | Microchip Technology | Description: TVS DIODE 145VWM 234VC DO204AL |
товар відсутній |
||||||||
MXP4KE8.2A | Microchip Technology | Description: TVS DIODE 7.02VWM 12.1VC DO204AL |
товар відсутній |
||||||||
MXP4KE82Ae3 | Microchip Technology | Description: TVS DIODE 70.1VWM 113VC DO204AL |
товар відсутній |
||||||||
MXP4KE200CAe3 | Microchip Technology | Description: TVS DIODE 171VWM 274VC DO204AL |
товар відсутній |
||||||||
MNSKCB2N2907A | Microchip Technology |
Description: MNSKCB2N2907A Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товар відсутній |
||||||||
MNS2N2907AUBP | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
товар відсутній |
||||||||
MNS2N2907AUBP/TR | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
товар відсутній |
||||||||
DSC1202DI3-156M0000T | Microchip Technology | Description: MEMS OSC HP 156MHZ LVPECL -40C-8 |
товар відсутній |
||||||||
DSC1202DI3-156M0000 | Microchip Technology | Description: MEMS OSC HP 156MHZ LVPECL -40C-8 |
товар відсутній |
||||||||
MXRT100KP90CAe3 | Microchip Technology | Description: TVS DIODE 90VWM 178VC CASE 5A |
товар відсутній |
||||||||
MCP14A0601-E/MS | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8MSOP Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-MSOP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
|
|||||||
MCP14A0601-E/SN | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A Part Status: Active |
на замовлення 274 шт: термін постачання 21-31 дні (днів) |
|
|||||||
MCP14A0601T-E/MS | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-MSOP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
товар відсутній |
||||||||
MCP14A0601T-E/MS | Microchip Technology |
Description: IC GATE DRVR LOW-SIDE 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 18V Input Type: Inverting Supplier Device Package: 8-MSOP Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
товар відсутній |
||||||||
MCP14A0601T-E/SN | Microchip Technology | Description: IC GATE DRVR LOW-SIDE 8SOIC |
товар відсутній |
||||||||
MCP14A0601T-E/SN | Microchip Technology | Description: IC GATE DRVR LOW-SIDE 8SOIC |
товар відсутній |
||||||||
MCP14A0601T-E/MNY | Microchip Technology | Description: IC GATE DRVR LOW-SIDE 8DFN |
товар відсутній |
||||||||
MCP14A0601T-E/MNY | Microchip Technology | Description: IC GATE DRVR LOW-SIDE 8DFN |
товар відсутній |
||||||||
93LC66BT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Verified |
товар відсутній |
||||||||
93LC66BT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Verified |
на замовлення 2838 шт: термін постачання 21-31 дні (днів) |
|
|||||||
93LC66AT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
товар відсутній |
||||||||
93LC66AT-E/OT | Microchip Technology |
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: SOT-23-6 Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Verified |
на замовлення 2308 шт: термін постачання 21-31 дні (днів) |
|
|||||||
JAN1N3826AUR-1 | Microchip Technology |
Description: DIODE ZENER 5.1V 1W DO213AB Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200 Voltage Coupled to Current - Reverse Leakage @ Vr: 1 Grade: Military Qualification: MIL-PRF-19500/115 |
товар відсутній |
||||||||
JANS1N6125A | Microchip Technology | Description: TVS DIODE 47.1VWM 85.3VC AXIAL |
товар відсутній |
||||||||
MASMCG150CA | Microchip Technology | Description: TVS DIODE 150VWM 243VC SMCG |
товар відсутній |
||||||||
MASMCG150A | Microchip Technology | Description: TVS DIODE 150VWM 243VC SMCG |
товар відсутній |
||||||||
MASMCG14CAe3 | Microchip Technology | Description: TVS DIODE 14VWM 23.2VC SMCG |
товар відсутній |
||||||||
MASMCG150Ae3 | Microchip Technology | Description: TVS DIODE 150VWM 243VC SMCG |
товар відсутній |
||||||||
MASMCG14Ae3 | Microchip Technology | Description: TVS DIODE 14VWM 23.2VC SMCG |
товар відсутній |
||||||||
MASMCG14CA | Microchip Technology | Description: TVS DIODE 14VWM 23.2VC SMCG |
товар відсутній |
||||||||
MASMCG13CAe3 | Microchip Technology | Description: TVS DIODE 13VWM 21.5VC SMCG |
товар відсутній |
||||||||
MASMCG14A | Microchip Technology | Description: TVS DIODE 14VWM 23.2VC SMCG |
товар відсутній |
||||||||
MASMCG13CA | Microchip Technology | Description: TVS DIODE 13VWM 21.5VC SMCG |
товар відсутній |
||||||||
MASMCG150CAe3 | Microchip Technology | Description: TVS DIODE 150VWM 243VC SMCG |
товар відсутній |
||||||||
S504100 | Microchip Technology |
Description: DIODE GP 1KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1000 V |
товар відсутній |
||||||||
S504140 | Microchip Technology |
Description: DIODE GP 1.4KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1400 V |
товар відсутній |
||||||||
S504160 | Microchip Technology |
Description: DIODE GP 1.6KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1600 V |
товар відсутній |
||||||||
S504120 | Microchip Technology |
Description: DIODE GP 1.2KV 300A DO205AB DO9 Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
товар відсутній |
||||||||
MCP1501T-33E/SN | Microchip Technology |
Description: IC VREF SERIES 0.1% 8SOIC Packaging: Tape & Reel (TR) Tolerance: ±0.1% Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 3.5V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 550µA Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 3.3V Part Status: Active Current - Output: 20 mA |
товар відсутній |
||||||||
MCP1501T-33E/SN | Microchip Technology |
Description: IC VREF SERIES 0.1% 8SOIC Tolerance: ±0.1% Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 3.5V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 550µA Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 3.3V Part Status: Active Current - Output: 20 mA |
на замовлення 2841 шт: термін постачання 21-31 дні (днів) |
|
|||||||
SMAJ33CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
товар відсутній |
||||||||
SMAJ33CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
на замовлення 4560 шт: термін постачання 21-31 дні (днів) |
|
|||||||
DSA6102MI3B-038.4000TVAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
товар відсутній |
||||||||
DSA6102MI3B-038.4000VAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
товар відсутній |
||||||||
VSC8489YJU-17 | Microchip Technology | Description: IC TELECOM INTERFACE 196FCBGA |
на замовлення 323 шт: термін постачання 21-31 дні (днів) |
|
MXP4KE170CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 145VWM 234VC DO204AL
Description: TVS DIODE 145VWM 234VC DO204AL
товар відсутній
MXP4KE180CA |
Виробник: Microchip Technology
Description: TVS DIODE 154VWM 246VC DO204AL
Description: TVS DIODE 154VWM 246VC DO204AL
товар відсутній
MXP4KE100A |
Виробник: Microchip Technology
Description: TVS DIODE 85.5VWM 137VC DO204AL
Description: TVS DIODE 85.5VWM 137VC DO204AL
товар відсутній
MXP4KE30CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 25.6VWM 41.4VC DO204AL
Description: TVS DIODE 25.6VWM 41.4VC DO204AL
товар відсутній
MXP4KE350Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 300VWM 482VC DO204AL
Description: TVS DIODE 300VWM 482VC DO204AL
товар відсутній
MXP4KE43Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
Description: TVS DIODE 36.8VWM 59.3VC DO204AL
товар відсутній
MXP4KE110CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 94VWM 152VC DO204AL
Description: TVS DIODE 94VWM 152VC DO204AL
товар відсутній
MXP4KE24CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 20.5VWM 33.2VC DO204AL
Description: TVS DIODE 20.5VWM 33.2VC DO204AL
товар відсутній
MXP4KE9.1CA |
Виробник: Microchip Technology
Description: TVS DIODE 7.78VWM 13.4VC DO204AL
Description: TVS DIODE 7.78VWM 13.4VC DO204AL
товар відсутній
MXP4KE120Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 102VWM 165VC DO204AL
Description: TVS DIODE 102VWM 165VC DO204AL
товар відсутній
MXP4KE11CA |
Виробник: Microchip Technology
Description: TVS DIODE 9.4VWM 15.6VC DO204AL
Description: TVS DIODE 9.4VWM 15.6VC DO204AL
товар відсутній
MXP4KE24Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 20.5VWM 33.2VC DO204AL
Description: TVS DIODE 20.5VWM 33.2VC DO204AL
товар відсутній
MXP4KE56CA |
Виробник: Microchip Technology
Description: TVS DIODE 47.8VWM 77VC DO204AL
Description: TVS DIODE 47.8VWM 77VC DO204AL
товар відсутній
MXP4KE12CA |
Виробник: Microchip Technology
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10.2VWM 16.7VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 10.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
товар відсутній
MXP4KE170CA |
Виробник: Microchip Technology
Description: TVS DIODE 145VWM 234VC DO204AL
Description: TVS DIODE 145VWM 234VC DO204AL
товар відсутній
MXP4KE8.2A |
Виробник: Microchip Technology
Description: TVS DIODE 7.02VWM 12.1VC DO204AL
Description: TVS DIODE 7.02VWM 12.1VC DO204AL
товар відсутній
MXP4KE82Ae3 |
Виробник: Microchip Technology
Description: TVS DIODE 70.1VWM 113VC DO204AL
Description: TVS DIODE 70.1VWM 113VC DO204AL
товар відсутній
MXP4KE200CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 171VWM 274VC DO204AL
Description: TVS DIODE 171VWM 274VC DO204AL
товар відсутній
MNSKCB2N2907A |
Виробник: Microchip Technology
Description: MNSKCB2N2907A
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: MNSKCB2N2907A
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
MNS2N2907AUBP |
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товар відсутній
MNS2N2907AUBP/TR |
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
товар відсутній
DSC1202DI3-156M0000T |
Виробник: Microchip Technology
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
товар відсутній
DSC1202DI3-156M0000 |
Виробник: Microchip Technology
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
Description: MEMS OSC HP 156MHZ LVPECL -40C-8
товар відсутній
MXRT100KP90CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 178VC CASE 5A
Description: TVS DIODE 90VWM 178VC CASE 5A
товар відсутній
MCP14A0601-E/MS |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
на замовлення 171 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 102.82 грн |
25+ | 82.62 грн |
100+ | 76.95 грн |
MCP14A0601-E/SN |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
на замовлення 274 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 115.76 грн |
25+ | 93.22 грн |
100+ | 86.2 грн |
MCP14A0601T-E/MS |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
товар відсутній
MCP14A0601T-E/MS |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
товар відсутній
MCP14A0601T-E/SN |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Description: IC GATE DRVR LOW-SIDE 8SOIC
товар відсутній
MCP14A0601T-E/SN |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Description: IC GATE DRVR LOW-SIDE 8SOIC
товар відсутній
MCP14A0601T-E/MNY |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DFN
Description: IC GATE DRVR LOW-SIDE 8DFN
товар відсутній
MCP14A0601T-E/MNY |
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DFN
Description: IC GATE DRVR LOW-SIDE 8DFN
товар відсутній
93LC66BT-E/OT |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
товар відсутній
93LC66BT-E/OT |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
на замовлення 2838 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 28.04 грн |
25+ | 25.04 грн |
100+ | 24.37 грн |
93LC66AT-E/OT |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
товар відсутній
93LC66AT-E/OT |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
на замовлення 2308 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.6 грн |
25+ | 23.98 грн |
100+ | 23.35 грн |
JAN1N3826AUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Grade: Military
Qualification: MIL-PRF-19500/115
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Grade: Military
Qualification: MIL-PRF-19500/115
товар відсутній
JANS1N6125A |
Виробник: Microchip Technology
Description: TVS DIODE 47.1VWM 85.3VC AXIAL
Description: TVS DIODE 47.1VWM 85.3VC AXIAL
товар відсутній
MASMCG150CAe3 |
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
Description: TVS DIODE 150VWM 243VC SMCG
товар відсутній
S504100 |
Виробник: Microchip Technology
Description: DIODE GP 1KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
Description: DIODE GP 1KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
товар відсутній
S504140 |
Виробник: Microchip Technology
Description: DIODE GP 1.4KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
Description: DIODE GP 1.4KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
товар відсутній
S504160 |
Виробник: Microchip Technology
Description: DIODE GP 1.6KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
Description: DIODE GP 1.6KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
товар відсутній
S504120 |
Виробник: Microchip Technology
Description: DIODE GP 1.2KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE GP 1.2KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
товар відсутній
MCP1501T-33E/SN |
Виробник: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
товар відсутній
MCP1501T-33E/SN |
Виробник: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Tolerance: ±0.1%
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
Description: IC VREF SERIES 0.1% 8SOIC
Tolerance: ±0.1%
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
на замовлення 2841 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 56.08 грн |
25+ | 44.76 грн |
100+ | 40.92 грн |
SMAJ33CAE3/TR13 |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
SMAJ33CAE3/TR13 |
Виробник: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 4560 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
24+ | 12.22 грн |
100+ | 10.23 грн |
DSA6102MI3B-038.4000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
DSA6102MI3B-038.4000VAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
VSC8489YJU-17 |
Виробник: Microchip Technology
Description: IC TELECOM INTERFACE 196FCBGA
Description: IC TELECOM INTERFACE 196FCBGA
на замовлення 323 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 4812.41 грн |
25+ | 4222.76 грн |