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DSC2311KE1-R0047 DSC2311KE1-R0047 Microchip Technology DSC2311KE1-R0047.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI2-R0008T DSC2311KI2-R0008T Microchip Technology DSC2311KI2-R0008.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KL2-R0048 DSC2311KL2-R0048 Microchip Technology DSC2311KL2-R0048.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KM2-R0002 DSC2311KM2-R0002 Microchip Technology 20005611A.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL2-R0002T DSC2311KL2-R0002T Microchip Technology DSC2311KL2-R0002.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI1-R0054T DSC2311KI1-R0054T Microchip Technology DSC2311KI1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI1-R0059T DSC2311KI1-R0059T Microchip Technology DSC2311KI1-R0059.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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MSMCJ30A/TR MSMCJ30A/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC6001JI1B-460K800 DSC6001JI1B-460K800 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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DSC6001JI1B-460K800T DSC6001JI1B-460K800T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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1N4759AP/TR8 1N4759AP/TR8 Microchip Technology 10911-sa5-33-datasheet Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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1N4759AG/TR 1N4759AG/TR Microchip Technology 1N4728AG_1N4764AG_e3.pdf Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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1N4759UR-1 1N4759UR-1 Microchip Technology MLL4728A-1-Microsemi.pdf Description: DIODE ZENER 62V 1W DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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AX500-PQ208I Microchip Technology index.php?option=com_docman&task=doc_download&gid=130669 Description: IC FPGA 115 I/O 208QFP
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
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AX500-1PQ208I Microchip Technology index.php?option=com_docman&task=doc_download&gid=130669 Description: IC FPGA 115 I/O 208QFP
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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MNS1N5819UR-1 MNS1N5819UR-1 Microchip Technology 131895-lds-0301-1.pdf Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
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MNS1N5819UR-1/TR MNS1N5819UR-1/TR Microchip Technology 131895-lds-0301-1.pdf Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
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1N5913B/TR 1N5913B/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N5913BUR-1/TR 1N5913BUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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MSCSM120TAM31T3AG Microchip Technology MSCSM120TAM31T3AG-SiC-MOSFET-module-DS00004640.pdf Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM70HM19T3AG Microchip Technology MSCSM70HM19T3AG-SiC-MOSFET-module-DS00004607.pdf Description: MOSFET 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+15199.90 грн
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MSCSM120AM08T3AG Microchip Technology MSCSM120AM08T3AG-SiC-MOSFET-module-DS00004574.pdf Description: MOSFET 2N-CH 1200V 337A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1409W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM02T6LIAG Microchip Technology MSCSM120AM02T6LIAG-SiC-MOSFET-module-DS00004562.pdf Description: MOSFET 2N-CH 1200V 947A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
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MSCSM120HM50T3AG Microchip Technology MSCSM120HM50T3AG-SiC-MOSFET-module-DS00004645.pdf Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
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MSCSM120AM16T1AG Microchip Technology MSCSM120AM16T1AG-SiC-MOSFET-module-DS00004579.pdf Description: SIC 2N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
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MSCSM120AM042T6LIAG Microchip Technology MSCSM120AM042T6LIAG-SiC-MOSFET-module-DS00004631.pdf Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
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MSCSM70HM038AG Microchip Technology MSCSM70HM038AG-SiC-MOSFET-module-DS00004602.pdf Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
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MSCSM120HM083AG Microchip Technology MSCSM120HM083AG-SiC-MOSFET-module-DS00004648.pdf Description: MOSFET 4N-CH 1200V 251A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM120HM063AG Microchip Technology MSCSM120HM063AG-SiC-MOSFET-module-DS00004646.pdf Description: MOSFET 4N-CH 1200V 333A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM11T3AG Microchip Technology MSCSM120AM11T3AG-SiC-MOSFET-module-DS00004577.pdf Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM70AM07T3AG Microchip Technology MSCSM70AM07T3AG-SiC-MOSFET-module-DS00004606.pdf Description: MOSFET 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+21156.56 грн
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MSCSM70AM10T3AG Microchip Technology MSCSM70AM10T3AG-SiC-MOSFET-module-DS00004608.pdf Description: MOSFET 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+15403.85 грн
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MSCSM120HM16T3AG Microchip Technology MSCSM120HM16T3AG-SiC-MOSFET-module-DS00004613.pdf Description: SIC 4N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
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MSCSM70AM19T1AG MSCSM70AM19T1AG Microchip Technology MSCSM70AM19T1AG-SiC-MOSFET-module-DS00004605.pdf Description: MOSFET 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+7534.85 грн
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MSCSM120AM31T1AG Microchip Technology MSCSM120AM31T1AG-SiC-MOSFET-module-DS00004618.pdf Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM70AM025T6AG Microchip Technology MSCSM70AM025T6AG-SiC-MOSFET-module-DS00004628.pdf Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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MSCSM70AM025T6LIAG Microchip Technology MSCSM70AM025T6LIAG-SiC-MOSFET-module-DS00004627.pdf Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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MSCSM120AM03T6LIAG Microchip Technology MSCSM120AM03T6LIAG-SiC-MOSFET-module-DS00004570.pdf Description: MOSFET 2N-CH 1200V 805A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
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MSCSM120HM31T3AG Microchip Technology MSCSM120HM31T3AG-SiC-MOSFET-module-DS00004643.pdf Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM120AM027T6AG Microchip Technology MSCSM120AM027T6AG-SiC-MOSFET-module-DS00004630.pdf Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
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MSCSM70HM05AG Microchip Technology MSCSM70HM05AG-SiC-MOSFET-module-DS00004601.pdf Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
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MSCSM70TAM10TPAG Microchip Technology MSCSM70TAM10TPAG-SiC-MOSFET-module-DS00004626.pdf Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
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MSCSM120TAM11TPAG Microchip Technology MSCSM120TAM11TPAG-SiC-MOSFET-module-DS00004637.pdf Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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DSC6083CI2A-307K000T DSC6083CI2A-307K000T Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Obsolete
Frequency: 307 kHz
Base Resonator: MEMS
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MIC4685-5.0BR TR MIC4685-5.0BR TR Microchip Technology mic4685.pdf Description: IC REG BUCK 5V 3A 7SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-7 (7 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: 7-SPAK
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
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CDLL4976 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
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MXPLAD15KP130A MXPLAD15KP130A Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD15KP130Ae3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 130VWM 209VC PLAD
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MXLPLAD15KP130Ae3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 130VWM 209VC PLAD
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MPLAD15KP130A/TR MPLAD15KP130A/TR Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP130A MAPLAD15KP130A Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP130Ae3 MA15KP130Ae3 Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP130Ae3 MAPLAD15KP130Ae3 Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD15KP130A Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 130VWM 209VC PLAD
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M15KP130Ae3 M15KP130Ae3 Microchip Technology M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP130A MA15KP130A Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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AT87F52-24PI AT87F52-24PI Microchip Technology AT87F52.pdf Description: IC MCU 8BIT 8KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: OTP Quick FLASH
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Connectivity: UART/USART
Supplier Device Package: 40-PDIP
Number of I/O: 32
DigiKey Programmable: Not Verified
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11AA040-I/S16K Microchip Technology 22067J.pdf Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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11AA040-I/WF16K Microchip Technology 22067J.pdf Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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78160GNP Microchip Technology Description: RF MOSFET
Packaging: Bulk
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DSC2311KE1-R0047 DSC2311KE1-R0047.pdf
DSC2311KE1-R0047
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI2-R0008T DSC2311KI2-R0008.pdf
DSC2311KI2-R0008T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KL2-R0048 DSC2311KL2-R0048.pdf
DSC2311KL2-R0048
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KM2-R0002 20005611A.pdf
DSC2311KM2-R0002
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL2-R0002T DSC2311KL2-R0002.pdf
DSC2311KL2-R0002T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI1-R0054T DSC2311KI1-R0054.pdf
DSC2311KI1-R0054T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI1-R0059T DSC2311KI1-R0059.pdf
DSC2311KI1-R0059T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
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MSMCJ30A/TR 10561-msmc-datasheet
MSMCJ30A/TR
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC6001JI1B-460K800 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI1B-460K800
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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DSC6001JI1B-460K800T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI1B-460K800T
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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1N4759AP/TR8 10911-sa5-33-datasheet
1N4759AP/TR8
Виробник: Microchip Technology
Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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1N4759AG/TR 1N4728AG_1N4764AG_e3.pdf
1N4759AG/TR
Виробник: Microchip Technology
Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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1N4759UR-1 MLL4728A-1-Microsemi.pdf
1N4759UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 62V 1W DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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AX500-PQ208I index.php?option=com_docman&task=doc_download&gid=130669
Виробник: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
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AX500-1PQ208I index.php?option=com_docman&task=doc_download&gid=130669
Виробник: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
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MNS1N5819UR-1 131895-lds-0301-1.pdf
MNS1N5819UR-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
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MNS1N5819UR-1/TR 131895-lds-0301-1.pdf
MNS1N5819UR-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
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1N5913B/TR
1N5913B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N5913BUR-1/TR
1N5913BUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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MSCSM120TAM31T3AG MSCSM120TAM31T3AG-SiC-MOSFET-module-DS00004640.pdf
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM70HM19T3AG MSCSM70HM19T3AG-SiC-MOSFET-module-DS00004607.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15199.90 грн
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MSCSM120AM08T3AG MSCSM120AM08T3AG-SiC-MOSFET-module-DS00004574.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 337A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1409W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM02T6LIAG MSCSM120AM02T6LIAG-SiC-MOSFET-module-DS00004562.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 947A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
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MSCSM120HM50T3AG MSCSM120HM50T3AG-SiC-MOSFET-module-DS00004645.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
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MSCSM120AM16T1AG MSCSM120AM16T1AG-SiC-MOSFET-module-DS00004579.pdf
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
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MSCSM120AM042T6LIAG MSCSM120AM042T6LIAG-SiC-MOSFET-module-DS00004631.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
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MSCSM70HM038AG MSCSM70HM038AG-SiC-MOSFET-module-DS00004602.pdf
Виробник: Microchip Technology
Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
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MSCSM120HM083AG MSCSM120HM083AG-SiC-MOSFET-module-DS00004648.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 251A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM120HM063AG MSCSM120HM063AG-SiC-MOSFET-module-DS00004646.pdf
Виробник: Microchip Technology
Description: MOSFET 4N-CH 1200V 333A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM11T3AG MSCSM120AM11T3AG-SiC-MOSFET-module-DS00004577.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM70AM07T3AG MSCSM70AM07T3AG-SiC-MOSFET-module-DS00004606.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+21156.56 грн
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MSCSM70AM10T3AG MSCSM70AM10T3AG-SiC-MOSFET-module-DS00004608.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15403.85 грн
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MSCSM120HM16T3AG MSCSM120HM16T3AG-SiC-MOSFET-module-DS00004613.pdf
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
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MSCSM70AM19T1AG MSCSM70AM19T1AG-SiC-MOSFET-module-DS00004605.pdf
MSCSM70AM19T1AG
Виробник: Microchip Technology
Description: MOSFET 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7534.85 грн
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MSCSM120AM31T1AG MSCSM120AM31T1AG-SiC-MOSFET-module-DS00004618.pdf
Виробник: Microchip Technology
Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM70AM025T6AG MSCSM70AM025T6AG-SiC-MOSFET-module-DS00004628.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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MSCSM70AM025T6LIAG MSCSM70AM025T6LIAG-SiC-MOSFET-module-DS00004627.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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MSCSM120AM03T6LIAG MSCSM120AM03T6LIAG-SiC-MOSFET-module-DS00004570.pdf
Виробник: Microchip Technology
Description: MOSFET 2N-CH 1200V 805A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
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MSCSM120HM31T3AG MSCSM120HM31T3AG-SiC-MOSFET-module-DS00004643.pdf
Виробник: Microchip Technology
Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM120AM027T6AG MSCSM120AM027T6AG-SiC-MOSFET-module-DS00004630.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
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MSCSM70HM05AG MSCSM70HM05AG-SiC-MOSFET-module-DS00004601.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
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MSCSM70TAM10TPAG MSCSM70TAM10TPAG-SiC-MOSFET-module-DS00004626.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
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MSCSM120TAM11TPAG MSCSM120TAM11TPAG-SiC-MOSFET-module-DS00004637.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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DSC6083CI2A-307K000T DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6083CI2A-307K000T
Виробник: Microchip Technology
Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Obsolete
Frequency: 307 kHz
Base Resonator: MEMS
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MIC4685-5.0BR TR mic4685.pdf
MIC4685-5.0BR TR
Виробник: Microchip Technology
Description: IC REG BUCK 5V 3A 7SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-7 (7 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: 7-SPAK
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
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CDLL4976
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
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MXPLAD15KP130A mplad15kp.pdf
MXPLAD15KP130A
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD15KP130Ae3 9522-mplad15kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
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MXLPLAD15KP130Ae3 9522-mplad15kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
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MPLAD15KP130A/TR mplad15kp.pdf
MPLAD15KP130A/TR
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP130A mplad15kp.pdf
MAPLAD15KP130A
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP130Ae3 rf01011_m15kp_rev_e.pdf
MA15KP130Ae3
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP130Ae3 mplad15kp.pdf
MAPLAD15KP130Ae3
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD15KP130A 9522-mplad15kp-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
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M15KP130Ae3 M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf
M15KP130Ae3
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP130A rf01011_m15kp_rev_e.pdf
MA15KP130A
Виробник: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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AT87F52-24PI AT87F52.pdf
AT87F52-24PI
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: OTP Quick FLASH
Core Processor: 8051
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Connectivity: UART/USART
Supplier Device Package: 40-PDIP
Number of I/O: 32
DigiKey Programmable: Not Verified
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11AA040-I/S16K 22067J.pdf
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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11AA040-I/WF16K 22067J.pdf
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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78160GNP
Виробник: Microchip Technology
Description: RF MOSFET
Packaging: Bulk
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