Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (332514) > Сторінка 1707 з 5542
Фото | Назва | Виробник | Інформація |
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1N4578AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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1N4578AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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1N4576AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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1N4576AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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1N4577AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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1N4577AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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1N4571AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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1N4571AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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1N4579AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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1N4579AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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1N4570AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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1N4570AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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1N457AUR-1/TR | Microchip Technology |
Description: SIGNAL OR COMPUTER DIODE Packaging: Tape & Reel (TR) Part Status: Active |
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1N457AUR-1/TR | Microchip Technology |
Description: SIGNAL OR COMPUTER DIODE Packaging: Cut Tape (CT) Part Status: Active |
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1N4582AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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1N4582AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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1N4580AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 175 шт: термін постачання 21-31 дні (днів) |
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1N4580AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 175 шт: термін постачання 21-31 дні (днів) |
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1N4581AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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1N4581AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATED Packaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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1N458A | Microchip Technology |
Description: DIODE GEN PURP 150V 150MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
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JANTXV1N4583AUR-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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JANHCA1N4580A | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
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JAN1N5615 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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JANTX1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A-PAK Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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JAN1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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JANTXV1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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JAN1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
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JANS1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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JANTXV1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
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1N5615E3 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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1N5615E3/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
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JANTX1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A |
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JANS1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A |
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JANTX1N5615US | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A |
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JANTX1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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JAN1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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JANTXV1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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UTR21 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
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UTR21/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
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ATTINY827-MFR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 24VQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 8KB (8K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 15x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (4x4) Part Status: Active Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 11951 шт: термін постачання 21-31 дні (днів) |
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ATTINY827-MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 24VQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 8KB (8K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 15x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (4x4) Part Status: Active Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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ATTINY427-MUR | Microchip Technology |
Description: IC MCU 8BIT 4KB FLASH 24VQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 15x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (4x4) Part Status: Active Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 11991 шт: термін постачання 21-31 дні (днів) |
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ATTINY424-SSFR | Microchip Technology |
Description: IC MCU 8BIT 4KB FLASH 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 9x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 14-SOIC Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 2991 шт: термін постачання 21-31 дні (днів) |
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ATTINY424-XFR | Microchip Technology |
Description: IC MCU 8BIT 4KB FLASH 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 9x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 14-TSSOP Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ATTINY424-XUR | Microchip Technology |
Description: IC MCU 8BIT 4KB FLASH 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 9x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 14-TSSOP Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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1N6651 | Microchip Technology |
Description: RECTIFIER DIODE Packaging: Bulk Part Status: Active |
товар відсутній |
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1N6652 | Microchip Technology |
Description: DIODE GEN PURP 150V 20A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-59 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
товар відсутній |
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1N6653 | Microchip Technology |
Description: DIODE GEN PURP 200V 20A TO59 Packaging: Bulk Package / Case: TO-210AA, TO-59-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-59 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товар відсутній |
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1N6672 | Microchip Technology |
Description: DIODE ARRAY GP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V |
товар відсутній |
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1N6672R | Microchip Technology |
Description: DIODE ARRAY GP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V |
товар відсутній |
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PIC32MX250F256LT-50I/GJX | Microchip Technology |
Description: IC MCU 32BIT 256KB FLSH 100TFBGA Packaging: Tape & Reel (TR) Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® M4K™ Data Converters: A/D 48x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V Connectivity: I²C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT Supplier Device Package: 100-TFBGA (7x7) Part Status: Active Number of I/O: 81 DigiKey Programmable: Not Verified |
товар відсутній |
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PIC32MX250F256LT-I/GJX | Microchip Technology |
Description: IC MCU 32BIT 256KB FLSH 100TFBGA Packaging: Tape & Reel (TR) Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® M4K™ Data Converters: A/D 48x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V Connectivity: I²C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT Supplier Device Package: 100-TFBGA (7x7) Part Status: Active Number of I/O: 81 DigiKey Programmable: Not Verified |
товар відсутній |
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1N4733UR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товар відсутній |
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1N4733UR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Cut Tape (CT) Tolerance: ±10% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товар відсутній |
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AT26DF081A-SSU | Microchip Technology |
Description: IC FLASH 8MBIT SPI 70MHZ 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH Clock Frequency: 70 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Part Status: Discontinued at Digi-Key Write Cycle Time - Word, Page: 7µs, 5ms Memory Interface: SPI Memory Organization: 256 Bytes x 4096 pages DigiKey Programmable: Not Verified |
товар відсутній |
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ATMEGA329V-8MU | Microchip Technology |
Description: IC MCU 8BIT 32KB FLASH 64QFN Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 8MHz Program Memory Size: 32KB (16K x 16) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: SPI, UART/USART, USI Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Part Status: Active Number of I/O: 54 DigiKey Programmable: Verified |
товар відсутній |
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MIC6315-30D4UY-TR | Microchip Technology |
Description: IC SUPERVISOR 1 CHANNEL SOT143 Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 1.1s Minimum Voltage - Threshold: 3V Supplier Device Package: SOT-143 Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1N4578AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товар відсутній
1N4578AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товар відсутній
1N4576AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
110+ | 501.4 грн |
1N4576AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 539.42 грн |
1N4577AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
100+ | 608.79 грн |
1N4577AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 655.72 грн |
1N4571AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
147+ | 377.53 грн |
1N4571AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 406.71 грн |
1N4579AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товар відсутній
1N4579AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товар відсутній
1N4570AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
160+ | 347.22 грн |
1N4570AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 373.88 грн |
1N457AUR-1/TR |
Виробник: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SIGNAL OR COMPUTER DIODE
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
1N457AUR-1/TR |
Виробник: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
товар відсутній
1N4582AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
105+ | 517.81 грн |
1N4582AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 557.26 грн |
1N4580AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
175+ | 315.64 грн |
1N4580AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 339.64 грн |
1N4581AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
108+ | 505.42 грн |
1N4581AUR-1/TR |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 543.7 грн |
1N458A |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
товар відсутній
JANTXV1N4583AUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товар відсутній
JANHCA1N4580A |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товар відсутній
JAN1N5615 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
JANTX1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
JAN1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
JANTXV1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
JAN1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
товар відсутній
JANS1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
JANTXV1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
товар відсутній
1N5615E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
1N5615E3/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
товар відсутній
JANTX1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
товар відсутній
JANS1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
товар відсутній
JANTX1N5615US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
товар відсутній
JANTX1N4944/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
JAN1N4944/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
JANTXV1N4944/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
1N4944/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
товар відсутній
UTR21 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
товар відсутній
UTR21/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
товар відсутній
ATTINY827-MFR |
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 11951 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 79.91 грн |
25+ | 70.41 грн |
100+ | 63.45 грн |
ATTINY827-MUR |
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 75.63 грн |
25+ | 65.93 грн |
100+ | 60.29 грн |
ATTINY427-MUR |
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 11991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.5 грн |
25+ | 60.9 грн |
100+ | 55.26 грн |
ATTINY424-SSFR |
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 52.09 грн |
25+ | 46.47 грн |
100+ | 41.45 грн |
ATTINY424-XFR |
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 54.94 грн |
25+ | 48.34 грн |
100+ | 42.7 грн |
ATTINY424-XUR |
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 49.95 грн |
25+ | 43.97 грн |
100+ | 40.19 грн |
1N6651 |
товар відсутній
1N6652 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 20A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-59
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 20A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-59
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
1N6653 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 20A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-59
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 20A TO59
Packaging: Bulk
Package / Case: TO-210AA, TO-59-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-59
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
1N6672 |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Description: DIODE ARRAY GP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
товар відсутній
1N6672R |
Виробник: Microchip Technology
Description: DIODE ARRAY GP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Description: DIODE ARRAY GP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
товар відсутній
PIC32MX250F256LT-50I/GJX |
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 48x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I²C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 48x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I²C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
товар відсутній
PIC32MX250F256LT-I/GJX |
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 48x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I²C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLSH 100TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M4K™
Data Converters: A/D 48x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I²C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
Supplier Device Package: 100-TFBGA (7x7)
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
товар відсутній
1N4733UR-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товар відсутній
1N4733UR-1/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товар відсутній
AT26DF081A-SSU |
Виробник: Microchip Technology
Description: IC FLASH 8MBIT SPI 70MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 7µs, 5ms
Memory Interface: SPI
Memory Organization: 256 Bytes x 4096 pages
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI 70MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 7µs, 5ms
Memory Interface: SPI
Memory Organization: 256 Bytes x 4096 pages
DigiKey Programmable: Not Verified
товар відсутній
ATMEGA329V-8MU |
Виробник: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Verified
Description: IC MCU 8BIT 32KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: SPI, UART/USART, USI
Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Part Status: Active
Number of I/O: 54
DigiKey Programmable: Verified
товар відсутній
MIC6315-30D4UY-TR |
Виробник: Microchip Technology
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 3V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 29.25 грн |