Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (276976) > Сторінка 1708 з 4617
| Фото | Назва | Виробник | Інформація |
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1N4753AUR/TR | Microchip Technology |
Description: DIODE ZENER 36V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N4753AUR/TR | Microchip Technology |
Description: DIODE ZENER 36V 1W DO213ABPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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DSC6101HA2B-072.5000T | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-125C 25Packaging: Tape & Reel (TR) Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 125°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| DSC6331HL1AB-072.5000T | Microchip Technology |
Description: MEMS OSC SMDPackaging: Tape & Reel (TR) Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: LVCMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±50ppm Voltage - Supply: 1.71V ~ 3.63V Spread Spectrum Bandwidth: ±0.25%, Center Spread Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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DSC6101HA2B-072.5000 | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-125C 25Packaging: Bag Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 125°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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DSC6101HL2B-072.5000 | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-105C 25Packaging: Bag Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| DSC6102HL2B-072.5000T | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-105C 25Packaging: Tape & Reel (TR) Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| DSC6102HL2B-072.5000 | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-105C 25Packaging: Bag Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| DSC6331HL1AB-072.5000 | Microchip Technology |
Description: MEMS OSC SMDPackaging: Bag Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: LVCMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±50ppm Voltage - Supply: 1.71V ~ 3.63V Spread Spectrum Bandwidth: ±0.25%, Center Spread Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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DSC6101HL2B-072.5000T | Microchip Technology |
Description: MEMS OSC ULP LVCMOS -40C-105C 25Packaging: Tape & Reel (TR) Package / Case: 4-VFLGA Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Output: CMOS Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 105°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 3mA (Typ) Height - Seated (Max): 0.035" (0.89mm) Part Status: Active Frequency: 72.5 MHz Base Resonator: MEMS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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ATSAM4SD32CA-CFUR | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 100VFBGAPackaging: Cut Tape (CT) Package / Case: 100-VFBGA Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 2MB (2M x 8) RAM Size: 160K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 16x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 100-VFBGA (7x7) Part Status: Active Number of I/O: 79 DigiKey Programmable: Not Verified |
на замовлення 7509 шт: термін постачання 21-31 дні (днів) |
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1N4733AURE3/TR | Microchip Technology |
Description: DIODE ZENER 5.1V 1W DO213ABPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N4733AURE3/TR | Microchip Technology |
Description: DIODE ZENER 5.1V 1W DO213ABPackaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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| MPFS-ICICLE-KIT-ES-FP5 | Microchip Technology |
Description: DEVELOPMENT KIT Packaging: Bulk For Use With/Related Products: MPFS250 Type: FPGA + MCU/MPU SoC Contents: Board(s), Cable(s), Power Supply Platform: PolarFire SoC FPGA SiFive RISC-V Icicle Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MIC6315-46D4UY TR | Microchip Technology |
Description: OPEN-DRAIN MICROPROCESSOR RESETPackaging: Bulk Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Power Supply Monitor Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 1.1s Minimum Voltage - Threshold: 4.63V Supplier Device Package: SOT-143 Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 1615 шт: термін постачання 21-31 дні (днів) |
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| 1N4578AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 1N4578AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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1N4576AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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1N4576AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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1N4577AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N4577AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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1N4571AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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1N4571AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
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| 1N4579AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| 1N4579AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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1N4570AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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1N4570AUR-1/TR | Microchip Technology |
Description: TEMPERATURE COMPENSATEDPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 160 шт: термін постачання 21-31 дні (днів) |
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1N457AUR-1/TR | Microchip Technology |
Description: SIGNAL OR COMPUTER DIODE Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N457AUR-1/TR | Microchip Technology |
Description: SIGNAL OR COMPUTER DIODE Packaging: Cut Tape (CT) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N4582AUR-1/TR | Microchip Technology |
Description: DIODE ZENER 500MW DO213AAPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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1N4582AUR-1/TR | Microchip Technology |
Description: DIODE ZENER 500MW DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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1N4580AUR-1/TR | Microchip Technology |
Description: DIODE ZENER 500MW DO213AAPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 175 шт: термін постачання 21-31 дні (днів) |
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1N4580AUR-1/TR | Microchip Technology |
Description: DIODE ZENER 500MW DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 175 шт: термін постачання 21-31 дні (днів) |
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1N4581AUR-1/TR | Microchip Technology |
Description: DIODE ZENER 500MW DO213AAPackaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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1N4581AUR-1/TR | Microchip Technology |
Description: DIODE ZENER 500MW DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
на замовлення 108 шт: термін постачання 21-31 дні (днів) |
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JANTXV1N4583AUR-1/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-213AA Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANHCA1N4580A | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATEDPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Zener (Nom) (Vz): 6.4 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-35 (DO-204AH) Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 2 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N5615 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A AXIALPackaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
на замовлення 139 шт: термін постачання 21-31 дні (днів) |
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JANTX1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A-PAK Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANS1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5615E3 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5615/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1APackaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5615E3/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANS1N5615US/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N5615US | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A SQ-MELFPackaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Grade: Military Qualification: MIL-PRF-19500/429 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1APackaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1APackaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1APackaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
1N4944/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 1APackaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 35pF @ 12V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR21 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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UTR21/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 1A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Current - Reverse Leakage @ Vr: 3 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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ATTINY827-MFR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 24VQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 8KB (8K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 15x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (4x4) Part Status: Active Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 11417 шт: термін постачання 21-31 дні (днів) |
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ATTINY827-MUR | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 24VQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 8KB (8K x 8) RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 15x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (4x4) Part Status: Active Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 5954 шт: термін постачання 21-31 дні (днів) |
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ATTINY427-MUR | Microchip Technology |
Description: IC MCU 8BIT 4KB FLASH 24VQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 15x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 24-VQFN (4x4) Part Status: Active Number of I/O: 22 DigiKey Programmable: Not Verified |
на замовлення 11278 шт: термін постачання 21-31 дні (днів) |
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ATTINY424-SSFR | Microchip Technology |
Description: IC MCU 8BIT 4KB FLASH 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 9x12b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 14-SOIC Part Status: Active Number of I/O: 12 DigiKey Programmable: Not Verified |
на замовлення 5933 шт: термін постачання 21-31 дні (днів) |
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| 1N4753AUR/TR |
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Виробник: Microchip Technology
Description: DIODE ZENER 36V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Description: DIODE ZENER 36V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4753AUR/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 36V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Description: DIODE ZENER 36V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
товару немає в наявності
В кошику
од. на суму грн.
| DSC6101HA2B-072.5000T |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| DSC6331HL1AB-072.5000T |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| DSC6101HA2B-072.5000 |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC ULP LVCMOS -40C-125C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 125°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| DSC6101HL2B-072.5000 |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| DSC6102HL2B-072.5000T |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| DSC6102HL2B-072.5000 |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
товару немає в наявності
В кошику
од. на суму грн.
| DSC6331HL1AB-072.5000 |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC SMD
Packaging: Bag
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: LVCMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.71V ~ 3.63V
Spread Spectrum Bandwidth: ±0.25%, Center Spread
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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| DSC6101HL2B-072.5000T |
![]() |
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
Description: MEMS OSC ULP LVCMOS -40C-105C 25
Packaging: Tape & Reel (TR)
Package / Case: 4-VFLGA
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 3mA (Typ)
Height - Seated (Max): 0.035" (0.89mm)
Part Status: Active
Frequency: 72.5 MHz
Base Resonator: MEMS
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од. на суму грн.
| ATSAM4SD32CA-CFUR |
![]() |
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 100VFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 100VFBGA
Packaging: Cut Tape (CT)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: EBI/EMI, I2C, IrDA, Memory Card, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 100-VFBGA (7x7)
Part Status: Active
Number of I/O: 79
DigiKey Programmable: Not Verified
на замовлення 7509 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 949.90 грн |
| 25+ | 831.26 грн |
| 100+ | 751.93 грн |
| 1N4733AURE3/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4733AURE3/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 264.34 грн |
| MPFS-ICICLE-KIT-ES-FP5 |
Виробник: Microchip Technology
Description: DEVELOPMENT KIT
Packaging: Bulk
For Use With/Related Products: MPFS250
Type: FPGA + MCU/MPU SoC
Contents: Board(s), Cable(s), Power Supply
Platform: PolarFire SoC FPGA SiFive RISC-V Icicle
Part Status: Obsolete
Description: DEVELOPMENT KIT
Packaging: Bulk
For Use With/Related Products: MPFS250
Type: FPGA + MCU/MPU SoC
Contents: Board(s), Cable(s), Power Supply
Platform: PolarFire SoC FPGA SiFive RISC-V Icicle
Part Status: Obsolete
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| MIC6315-46D4UY TR |
![]() |
Виробник: Microchip Technology
Description: OPEN-DRAIN MICROPROCESSOR RESET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
Description: OPEN-DRAIN MICROPROCESSOR RESET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Power Supply Monitor
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 1.1s Minimum
Voltage - Threshold: 4.63V
Supplier Device Package: SOT-143
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 1615 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1615+ | 17.16 грн |
| 1N4578AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4578AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4576AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 110+ | 568.39 грн |
| 1N4576AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 611.82 грн |
| 1N4577AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4577AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 742.82 грн |
| 1N4571AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 147+ | 427.97 грн |
| 1N4571AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 147 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 461.22 грн |
| 1N4579AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4579AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N4570AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 160+ | 393.62 грн |
| 1N4570AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: TEMPERATURE COMPENSATED
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 423.57 грн |
| 1N457AUR-1/TR |
Виробник: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SIGNAL OR COMPUTER DIODE
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N457AUR-1/TR |
Виробник: Microchip Technology
Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
Description: SIGNAL OR COMPUTER DIODE
Packaging: Cut Tape (CT)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N4582AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 574.47 грн |
| 1N4582AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 618.88 грн |
| 1N4580AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 175+ | 350.18 грн |
| 1N4580AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 175 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 377.29 грн |
| 1N4581AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER 500MW DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 108+ | 560.73 грн |
| 1N4581AUR-1/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER 500MW DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 108 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 603.20 грн |
| JANTXV1N4583AUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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| JANHCA1N4580A |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 6.4 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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| JAN1N5615 |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
на замовлення 139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 302.77 грн |
| 100+ | 270.62 грн |
| JANTX1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A A-PAK
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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| JAN1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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| JANTXV1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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| JAN1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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| JANS1N5615/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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| JANTXV1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/429
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| 1N5615E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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| 1N5615/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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| 1N5615E3/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
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| JANTX1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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| JANS1N5615US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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| JANTX1N5615US |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
Description: DIODE GEN PURP 200V 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Grade: Military
Qualification: MIL-PRF-19500/429
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| JANTX1N4944/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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| JAN1N4944/TR |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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| JANTXV1N4944/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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| 1N4944/TR |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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| UTR21 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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| UTR21/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
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| ATTINY827-MFR |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 11417 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.85 грн |
| 25+ | 77.35 грн |
| 100+ | 69.67 грн |
| ATTINY827-MUR |
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Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 5954 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 78.44 грн |
| 25+ | 68.49 грн |
| 100+ | 62.63 грн |
| ATTINY427-MUR |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 15x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 24-VQFN (4x4)
Part Status: Active
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 11278 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 71.38 грн |
| 25+ | 63.27 грн |
| 100+ | 57.41 грн |
| ATTINY424-SSFR |
![]() |
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 9x12b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Not Verified
на замовлення 5933 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 54.12 грн |
| 25+ | 48.28 грн |
| 100+ | 43.05 грн |












