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PIC18F57K42T-I/MV PIC18F57K42T-I/MV Microchip Technology PIC18(L)F26-27-45-46-47-55-56-57K42-Data-Sheet-40001919G.pdf Description: IC MCU 8BIT 128KB FLASH 48UQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 48-UQFN (6x6)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 6089 шт:
термін постачання 21-31 дні (днів)
2+220.41 грн
25+193.74 грн
100+175.51 грн
Мінімальне замовлення: 2
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PIC18F57K42-E/PT PIC18F57K42-E/PT Microchip Technology PIC18(L)F26-27-45-46-47-55-56-57K42-Data-Sheet-40001919G.pdf Description: IC MCU 8BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP-EP (7x7)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
2+234.39 грн
25+206.67 грн
100+186.91 грн
Мінімальне замовлення: 2
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AT80C51RD2T-RLRUM AT80C51RD2T-RLRUM Microchip Technology doc4113.pdf Description: IC MCU 8BIT ROMLESS 44VQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Not Verified
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AT80C51RD2T-RLRUM AT80C51RD2T-RLRUM Microchip Technology doc4113.pdf Description: IC MCU 8BIT ROMLESS 44VQFP
Packaging: Cut Tape (CT)
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Not Verified
на замовлення 1048 шт:
термін постачання 21-31 дні (днів)
2+327.32 грн
25+289.60 грн
100+262.32 грн
Мінімальне замовлення: 2
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AT80C51RD2T-RLTUM AT80C51RD2T-RLTUM Microchip Technology doc4113.pdf Description: IC MCU 8BIT ROMLESS 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Not Verified
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
2+313.34 грн
25+276.71 грн
100+250.95 грн
Мінімальне замовлення: 2
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UFS160G/TR13 Microchip Technology Description: DIODE GEN PURP REV 600V 1A SMBG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBG)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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DSC1004CL2-003.2768T DSC1004CL2-003.2768T Microchip Technology Description: MEMS OSC 3.2768MHZ LVCMOS 25PPM
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.2768 MHz
Base Resonator: MEMS
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DSC1001CI5-003.2768 DSC1001CI5-003.2768 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 3.2768MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±10ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.2768 MHz
Base Resonator: MEMS
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DSC1001CI2-003.2768 DSC1001CI2-003.2768 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 3.2768MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.2768 MHz
Base Resonator: MEMS
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APT50M75LFLLG APT50M75LFLLG Microchip Technology 6349-apt50m75b2fllg-apt50m75lfllg-datasheet Description: MOSFET N-CH 500V 57A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50M75B2FLLG APT50M75B2FLLG Microchip Technology 6349-apt50m75b2fllg-apt50m75lfllg-datasheet Description: MOSFET N-CH 500V 57A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50M75JLL APT50M75JLL Microchip Technology 6352-apt50m75jll-datasheet Description: MOSFET N-CH 500V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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1N5279BUR-1/TR Microchip Technology 1N5221BUR-1%20thru%201N5281BUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BUR-1/TR Microchip Technology 1N5221BUR-1%20thru%201N5281BUR-1.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
1+367.62 грн
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1N5279 1N5279 Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 130 V
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1N5279B-1 1N5279B-1 Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BE3 1N5279BE3 Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279B/TR 1N5279B/TR Microchip Technology 1N5221%20-%201N5281B.pdf Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279/TR 1N5279/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 130 V
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1N5279B-1/TR 1N5279B-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BE3/TR 1N5279BE3/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BUR-1 Microchip Technology 1N5221BUR-1%20thru%201N5281BUR-1.pdf Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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MCP1642BT-33I/MC MCP1642BT-33I/MC Microchip Technology 20005253A.pdf Description: IC REG BOOST 3.3V 800MA 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 8-DFN (2x3)
Synchronous Rectifier: Yes
Voltage - Input (Min): 0.65V
Voltage - Output (Min/Fixed): 3.3V
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MCP1642DT-50I/MC MCP1642DT-50I/MC Microchip Technology 20005253A.pdf Description: IC REG BOOST 5V 800MA 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 8-DFN (2x3)
Synchronous Rectifier: Yes
Voltage - Input (Min): 0.65V
Voltage - Output (Min/Fixed): 5V
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M1.5KE160A Microchip Technology RF01008_rE.pdf Description: TVS DIODE 136VWM 219VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC1001AI2-025.0000T DSC1001AI2-025.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1003AI2-025.0000T DSC1003AI2-025.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 25.0000MHZ LVCMOS
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1001AI2-025.0007T DSC1001AI2-025.0007T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 25.0007MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25.0007 MHz
Base Resonator: MEMS
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DSC1001AI2-025.0000 DSC1001AI2-025.0000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1001AI2-025.0007 DSC1001AI2-025.0007 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 25.0007MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25.0007 MHz
Base Resonator: MEMS
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DSC1101AI2-025.0000T DSC1101AI2-025.0000T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1121AI2-025.0000T DSC1121AI2-025.0000T Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1121AI2-025.0000 DSC1121AI2-025.0000 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1003AI2-025.0000 DSC1003AI2-025.0000 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1101AI2-025.0000 DSC1101AI2-025.0000 Microchip Technology DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1103AI2-025.0000T DSC1103AI2-025.0000T Microchip Technology DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1123AI2-025.0000T DSC1123AI2-025.0000T Microchip Technology DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1123AI2-025.0000 DSC1123AI2-025.0000 Microchip Technology DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1103AI2-025.0000 DSC1103AI2-025.0000 Microchip Technology DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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1N4691/TR 1N4691/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691C 1N4691C Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691C/TR 1N4691C/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691D 1N4691D Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691D/TR 1N4691D/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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2N2907AUA Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UA
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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VC-807-EDE-FAAN-322M265625 Microchip Technology Description: VC-807-EDE-FAAN-322M265625
Packaging: Tape & Reel (TR)
Frequency: 322.265625 MHz
Base Resonator: Crystal
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TN2640LG-G TN2640LG-G Microchip Technology TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf Description: MOSFET N-CH 400V 260MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
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TN2640LG-G TN2640LG-G Microchip Technology TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf Description: MOSFET N-CH 400V 260MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
на замовлення 2718 шт:
термін постачання 21-31 дні (днів)
1+606.94 грн
25+434.31 грн
100+368.98 грн
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CDLL5918Be3 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
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CDLL5918Be3/TR CDLL5918Be3/TR Microchip Technology Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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PIC32CK1025SG01100-I/4SB-SL3 PIC32CK1025SG01100-I/4SB-SL3 Microchip Technology PIC32CK-SG01-SG00-GC01-GC00-Family-Data-Sheet-DS60001795.pdf Description: M33 HSM 1MB/256 100 TQFP
Packaging: Tray
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33
Data Converters: A/D 15x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SDHC, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, I2S, LVD, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 72
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
1+383.24 грн
25+335.25 грн
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SM1612C/TR13 SM1612C/TR13 Microchip Technology SM1603%28C%29-SM1624%28C%29.pdf Description: TVS DIODE 12VWM 24VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 16-SO
Bidirectional Channels: 8
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
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1PMT4135E3/TR7 1PMT4135E3/TR7 Microchip Technology 10029-msc0994-datasheet Description: DIODE ZENER 100V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
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1PMT4135E3/TR7 1PMT4135E3/TR7 Microchip Technology 10029-msc0994-datasheet Description: DIODE ZENER 100V 1W DO216
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
на замовлення 2853 шт:
термін постачання 21-31 дні (днів)
10+36.19 грн
25+32.66 грн
Мінімальне замовлення: 10
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MSMBJ11Ae3 MSMBJ11Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMBJ11A/TR MSMBJ11A/TR Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBJ11A MASMBJ11A Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBJ11Ae3 MASMBJ11Ae3 Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSC090SMA070SDT/R MSC090SMA070SDT/R Microchip Technology MSC090SMA070SD-SiC-MOSFET-Datasheet.pdf Description: MOSFET SIC 700 V 90 MOHM TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+279.92 грн
Мінімальне замовлення: 800
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MSC090SMA070SDT/R MSC090SMA070SDT/R Microchip Technology MSC090SMA070SD-SiC-MOSFET-Datasheet.pdf Description: MOSFET SIC 700 V 90 MOHM TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
1+348.70 грн
25+309.56 грн
100+269.55 грн
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PIC18F57K42T-I/MV PIC18(L)F26-27-45-46-47-55-56-57K42-Data-Sheet-40001919G.pdf
PIC18F57K42T-I/MV
Виробник: Microchip Technology
Description: IC MCU 8BIT 128KB FLASH 48UQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 48-UQFN (6x6)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 6089 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+220.41 грн
25+193.74 грн
100+175.51 грн
Мінімальне замовлення: 2
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PIC18F57K42-E/PT PIC18(L)F26-27-45-46-47-55-56-57K42-Data-Sheet-40001919G.pdf
PIC18F57K42-E/PT
Виробник: Microchip Technology
Description: IC MCU 8BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 43x12b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, HLVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP-EP (7x7)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.39 грн
25+206.67 грн
100+186.91 грн
Мінімальне замовлення: 2
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AT80C51RD2T-RLRUM doc4113.pdf
AT80C51RD2T-RLRUM
Виробник: Microchip Technology
Description: IC MCU 8BIT ROMLESS 44VQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Not Verified
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AT80C51RD2T-RLRUM doc4113.pdf
AT80C51RD2T-RLRUM
Виробник: Microchip Technology
Description: IC MCU 8BIT ROMLESS 44VQFP
Packaging: Cut Tape (CT)
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Not Verified
на замовлення 1048 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+327.32 грн
25+289.60 грн
100+262.32 грн
Мінімальне замовлення: 2
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AT80C51RD2T-RLTUM doc4113.pdf
AT80C51RD2T-RLTUM
Виробник: Microchip Technology
Description: IC MCU 8BIT ROMLESS 44VQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: 80C51
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 44-VQFP (10x10)
Number of I/O: 32
DigiKey Programmable: Not Verified
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+313.34 грн
25+276.71 грн
100+250.95 грн
Мінімальне замовлення: 2
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UFS160G/TR13
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 600V 1A SMBG
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBG)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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DSC1004CL2-003.2768T
DSC1004CL2-003.2768T
Виробник: Microchip Technology
Description: MEMS OSC 3.2768MHZ LVCMOS 25PPM
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 105°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.2768 MHz
Base Resonator: MEMS
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DSC1001CI5-003.2768 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001CI5-003.2768
Виробник: Microchip Technology
Description: MEMS OSC XO 3.2768MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±10ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.2768 MHz
Base Resonator: MEMS
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DSC1001CI2-003.2768 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001CI2-003.2768
Виробник: Microchip Technology
Description: MEMS OSC XO 3.2768MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Current - Supply (Max): 8mA
Supplier Device Package: 4-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.2768 MHz
Base Resonator: MEMS
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APT50M75LFLLG 6349-apt50m75b2fllg-apt50m75lfllg-datasheet
APT50M75LFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 57A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50M75B2FLLG 6349-apt50m75b2fllg-apt50m75lfllg-datasheet
APT50M75B2FLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 57A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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APT50M75JLL 6352-apt50m75jll-datasheet
APT50M75JLL
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 51A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 25 V
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1N5279BUR-1/TR 1N5221BUR-1%20thru%201N5281BUR-1.pdf
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BUR-1/TR 1N5221BUR-1%20thru%201N5281BUR-1.pdf
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
на замовлення 172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+367.62 грн
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1N5279
1N5279
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 130 V
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1N5279B-1
1N5279B-1
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BE3
1N5279BE3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279B/TR 1N5221%20-%201N5281B.pdf
1N5279B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279/TR
1N5279/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 130 V
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1N5279B-1/TR
1N5279B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BE3/TR
1N5279BE3/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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1N5279BUR-1 1N5221BUR-1%20thru%201N5281BUR-1.pdf
Виробник: Microchip Technology
Description: DIODE ZENER
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 2200 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 137 V
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MCP1642BT-33I/MC 20005253A.pdf
MCP1642BT-33I/MC
Виробник: Microchip Technology
Description: IC REG BOOST 3.3V 800MA 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 8-DFN (2x3)
Synchronous Rectifier: Yes
Voltage - Input (Min): 0.65V
Voltage - Output (Min/Fixed): 3.3V
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MCP1642DT-50I/MC 20005253A.pdf
MCP1642DT-50I/MC
Виробник: Microchip Technology
Description: IC REG BOOST 5V 800MA 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 8-DFN (2x3)
Synchronous Rectifier: Yes
Voltage - Input (Min): 0.65V
Voltage - Output (Min/Fixed): 5V
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M1.5KE160A RF01008_rE.pdf
Виробник: Microchip Technology
Description: TVS DIODE 136VWM 219VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC1001AI2-025.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI2-025.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1003AI2-025.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1003AI2-025.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ LVCMOS
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1001AI2-025.0007T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI2-025.0007T
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0007MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25.0007 MHz
Base Resonator: MEMS
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DSC1001AI2-025.0000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI2-025.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1001AI2-025.0007 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI2-025.0007
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0007MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25.0007 MHz
Base Resonator: MEMS
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DSC1101AI2-025.0000T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1101AI2-025.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1121AI2-025.0000T DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AI2-025.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1121AI2-025.0000 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1121AI2-025.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1003AI2-025.0000 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1003AI2-025.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1101AI2-025.0000 DSC1101-21-Low-Jitter-Precision-CMOS-Oscillator-DS20005613D.pdf
DSC1101AI2-025.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1103AI2-025.0000T DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf
DSC1103AI2-025.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1123AI2-025.0000T DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf
DSC1123AI2-025.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1123AI2-025.0000 DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf
DSC1123AI2-025.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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DSC1103AI2-025.0000 DSC1103-23-Low-Jitter-Precision-LVDS-Oscillator-DS20005745C.pdf
DSC1103AI2-025.0000
Виробник: Microchip Technology
Description: MEMS OSC XO 25.0000MHZ LVDS SMD
Packaging: Strip
Package / Case: 6-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 25 MHz
Base Resonator: MEMS
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1N4691/TR
1N4691/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691C
1N4691C
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691C/TR
1N4691C/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691D
1N4691D
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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1N4691D/TR
1N4691D/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
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2N2907AUA 8896-lds-0059-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UA
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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VC-807-EDE-FAAN-322M265625
Виробник: Microchip Technology
Description: VC-807-EDE-FAAN-322M265625
Packaging: Tape & Reel (TR)
Frequency: 322.265625 MHz
Base Resonator: Crystal
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TN2640LG-G TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf
TN2640LG-G
Виробник: Microchip Technology
Description: MOSFET N-CH 400V 260MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
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TN2640LG-G TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf
TN2640LG-G
Виробник: Microchip Technology
Description: MOSFET N-CH 400V 260MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
на замовлення 2718 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+606.94 грн
25+434.31 грн
100+368.98 грн
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CDLL5918Be3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
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CDLL5918Be3/TR
CDLL5918Be3/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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PIC32CK1025SG01100-I/4SB-SL3 PIC32CK-SG01-SG00-GC01-GC00-Family-Data-Sheet-DS60001795.pdf
PIC32CK1025SG01100-I/4SB-SL3
Виробник: Microchip Technology
Description: M33 HSM 1MB/256 100 TQFP
Packaging: Tray
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33
Data Converters: A/D 15x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.63V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SDHC, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, I2S, LVD, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 72
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+383.24 грн
25+335.25 грн
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SM1612C/TR13 SM1603%28C%29-SM1624%28C%29.pdf
SM1612C/TR13
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 24VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 16-SO
Bidirectional Channels: 8
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
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1PMT4135E3/TR7 10029-msc0994-datasheet
1PMT4135E3/TR7
Виробник: Microchip Technology
Description: DIODE ZENER 100V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
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1PMT4135E3/TR7 10029-msc0994-datasheet
1PMT4135E3/TR7
Виробник: Microchip Technology
Description: DIODE ZENER 100V 1W DO216
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 76 V
на замовлення 2853 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.19 грн
25+32.66 грн
Мінімальне замовлення: 10
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MSMBJ11Ae3 10560-msmb-datasheet
MSMBJ11Ae3
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMBJ11A/TR 10560-msmb-datasheet
MSMBJ11A/TR
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBJ11A 10560-msmb-datasheet
MASMBJ11A
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMBJ11Ae3 10560-msmb-datasheet
MASMBJ11Ae3
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSC090SMA070SDT/R MSC090SMA070SD-SiC-MOSFET-Datasheet.pdf
MSC090SMA070SDT/R
Виробник: Microchip Technology
Description: MOSFET SIC 700 V 90 MOHM TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+279.92 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
MSC090SMA070SDT/R MSC090SMA070SD-SiC-MOSFET-Datasheet.pdf
MSC090SMA070SDT/R
Виробник: Microchip Technology
Description: MOSFET SIC 700 V 90 MOHM TO-263-
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+348.70 грн
25+309.56 грн
100+269.55 грн
В кошику  од. на суму  грн.
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