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DLTS-30CA Microchip Technology 10882-sa4-35-datasheet Description: TVS DIODE 30VWM 58.8VC 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 165pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: 16-CDIP
Bidirectional Channels: 15
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 58.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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DLTS-30A Microchip Technology 10882-sa4-35-datasheet Description: TVS DIODE 30VWM 58.8VC 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: 16-CDIP
Unidirectional Channels: 15
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 58.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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DLTS-30AH1 Microchip Technology 10882-sa4-35-pdf.pdf Description: TVS DIODE 30VWM 58.8VC 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: 16-CDIP
Unidirectional Channels: 15
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 58.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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COREJPEG-OM Microchip Technology Description: PERPETUAL OBFUSCATED NODE LOCKED
Packaging: Electronic Delivery
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1197643.38 грн
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COREJPEG-OMFL Microchip Technology Description: PERPETUAL OBFUSCATED FLOATING LI
Packaging: Electronic Delivery
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1197643.38 грн
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COREJPEGDEC-OMFL Microchip Technology Description: PERPETUAL OBFUSCATED FLOATING LI
Packaging: Electronic Delivery
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COREJPEGENC-OM Microchip Technology Description: PERPETUAL OBFUSCATED NODE LOCKED
Packaging: Electronic Delivery
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COREJPEGENC-OMFL Microchip Technology Description: PERPETUAL OBFUSCATED FLOATING LI
Packaging: Electronic Delivery
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COREJPEGDEC-OM Microchip Technology Description: PERPETUAL OBFUSCATED NODE LOCKED
Packaging: Electronic Delivery
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M1.5KE300A Microchip Technology RF01008_rE.pdf Description: TVS DIODE 256VWM 414VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT10M19SVFRG APT10M19SVFRG Microchip Technology 6595-apt10m19bvfrg-apt10m19svfrg-datasheet Description: MOSFET N-CH 100V 75A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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MAPLAD15KP7.5CA MAPLAD15KP7.5CA Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 7.5VWM 12.9VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1164A (1.164kA)
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP7.5CAe3 MAPLAD15KP7.5CAe3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 7.5VWM 12.9VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1164A (1.164kA)
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP75CA MAPLAD15KP75CA Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 75VWM 121VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP75CAe3 MAPLAD15KP75CAe3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 75VWM 121VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMLJ110CA MASMLJ110CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 110VWM 177VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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USD320C USD320C Microchip Technology Description: DIODE SCHOTTKY 20V 30A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-204AA (TO-3)
Voltage - DC Reverse (Vr) (Max): 20 V
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USD520 Microchip Technology Description: DIODE SCHOTTKY 20V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
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USD535 Microchip Technology Description: DIODE SCHOTTKY 35V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Current - Reverse Leakage @ Vr: 20 mA @ 35 V
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USD545 Microchip Technology Description: DIODE SCHOTTKY 45V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
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AT49BV6416T-70TI-T AT49BV6416T-70TI-T Microchip Technology AT49BV6416%2C%20T.pdf Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 15µs
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MIC4469BN MIC4469BN Microchip Technology MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf Description: IC GATE DRVR LOW-SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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MIC4469CN MIC4469CN Microchip Technology MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf Description: IC GATE DRVR LOW-SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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1N2063R Microchip Technology 1N4044-1N4056.pdf Description: DIODE GP REV 500V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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1N2063 Microchip Technology 1N4044-1N4056.pdf Description: DIODE GP 500V 275A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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AT28LV010-20TU-T AT28LV010-20TU-T Microchip Technology doc0395F.pdf Description: IC EEPROM 1MBIT PARALLEL 32TSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 128K x 8
DigiKey Programmable: Verified
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)
1+4445.97 грн
25+4120.28 грн
100+3959.30 грн
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AT28BV64B-20JU-T AT28BV64B-20JU-T Microchip Technology Atmel-0299-PEEPROM-AT28BV64B-Datasheet.pdf Description: IC EEPROM 64KBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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AT28BV64B-20JU-T AT28BV64B-20JU-T Microchip Technology Atmel-0299-PEEPROM-AT28BV64B-Datasheet.pdf Description: IC EEPROM 64KBIT PARALLEL 32PLCC
Packaging: Cut Tape (CT)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
1+445.75 грн
25+412.96 грн
100+396.63 грн
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AT28LV010-20JU-T AT28LV010-20JU-T Microchip Technology doc0395F.pdf Description: IC EEPROM 1MBIT PARALLEL 32PLCC
Packaging: Cut Tape (CT)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)
1+4297.93 грн
25+3982.61 грн
100+3827.08 грн
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M1.5KE24A Microchip Technology RF01008_rE.pdf Description: TVS DIODE 20.5VWM 33.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N827-1/TR 1N827-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827/TR 1N827/TR Microchip Technology 1N821UR-1N829UR-1_CDLL821-829A_CDI.pdf Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827-1E3 1N827-1E3 Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827-1E3/TR 1N827-1E3/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JAN1N827-1 JAN1N827-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JAN1N827-1/TR JAN1N827-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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1N827A/TR 1N827A/TR Microchip Technology 1N821UR-1N829UR-1_CDLL821-829A_CDI.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827A-1 1N827A-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 5.89V 500MW DO204AH
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.89 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AE3 Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Packaging: Bulk
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1N827A-1/TR 1N827A-1/TR Microchip Technology 125462-lds-0220.pdf Description: DIODE ZENER 5.89V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.89 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827A-1E3/TR 1N827A-1E3/TR Microchip Technology 125462-lds-0220.pdf Description: DIODE ZENER 5.89V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.89 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANTX1N827-1/TR JANTX1N827-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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1N827AE3/TR 1N827AE3/TR Microchip Technology Description: DIODE ZENER 6.2V 400MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 400 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JAN1N827UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JAN1N827UR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTX1N827UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTX1N827UR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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1N827UR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AUR-1/TR 1N827AUR-1/TR Microchip Technology 125462-lds-0220.pdf Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827E3 1N827E3 Microchip Technology Description: TEMPERATURE COMPENSATED
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AUR-1e3 1N827AUR-1e3 Microchip Technology 11037-lds-0220-1.pdf Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AUR-1e3/TR 1N827AUR-1e3/TR Microchip Technology 11037-lds-0220-1.pdf Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827E3/TR 1N827E3/TR Microchip Technology Description: TEMPERATURE COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANTXV1N827-1/TR JANTXV1N827-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANHCA1N827 JANHCA1N827 Microchip Technology 14809-military-qualified-die-chip Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTXV1N827UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTXV1N827UR-1/TR Microchip Technology Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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AC40T08A Microchip Technology AC40T08A-5.5-4-Lane-MIPI-720p-LCD-Display-Module-With-maXTouch-DS50003687.pdf Description: EVAL BOARD FOR MIC2289
Packaging: Bulk
Function: LCD Display
Type: Display
Contents: Board(s)
Utilized IC / Part: MIC2289
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+18531.45 грн
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JAN1N4485 JAN1N4485 Microchip Technology 1N4460-1N4496.1N6485-1N6491.pdf Description: DIODE ZENER 68V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 54.4 V
Qualification: MIL-PRF-19500/406
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ATMXT768E-ABR Microchip Technology MXT768EKM%20flyer%20-%20US%20-%20low%20res.pdf Description: IC SENSOR MAXTOUCH 768CH
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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DLTS-30CA 10882-sa4-35-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 58.8VC 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 165pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: 16-CDIP
Bidirectional Channels: 15
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 58.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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DLTS-30A 10882-sa4-35-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 58.8VC 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: 16-CDIP
Unidirectional Channels: 15
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 58.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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DLTS-30AH1 10882-sa4-35-pdf.pdf
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 58.8VC 16CDIP
Packaging: Tube
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 220pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: 16-CDIP
Unidirectional Channels: 15
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 58.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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COREJPEG-OM
Виробник: Microchip Technology
Description: PERPETUAL OBFUSCATED NODE LOCKED
Packaging: Electronic Delivery
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1197643.38 грн
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COREJPEG-OMFL
Виробник: Microchip Technology
Description: PERPETUAL OBFUSCATED FLOATING LI
Packaging: Electronic Delivery
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1197643.38 грн
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COREJPEGDEC-OMFL
Виробник: Microchip Technology
Description: PERPETUAL OBFUSCATED FLOATING LI
Packaging: Electronic Delivery
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COREJPEGENC-OM
Виробник: Microchip Technology
Description: PERPETUAL OBFUSCATED NODE LOCKED
Packaging: Electronic Delivery
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COREJPEGENC-OMFL
Виробник: Microchip Technology
Description: PERPETUAL OBFUSCATED FLOATING LI
Packaging: Electronic Delivery
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COREJPEGDEC-OM
Виробник: Microchip Technology
Description: PERPETUAL OBFUSCATED NODE LOCKED
Packaging: Electronic Delivery
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M1.5KE300A RF01008_rE.pdf
Виробник: Microchip Technology
Description: TVS DIODE 256VWM 414VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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APT10M19SVFRG 6595-apt10m19bvfrg-apt10m19svfrg-datasheet
APT10M19SVFRG
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 75A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
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MAPLAD15KP7.5CA 9522-mplad15kp-datasheet
MAPLAD15KP7.5CA
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1164A (1.164kA)
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP7.5CAe3 9522-mplad15kp-datasheet
MAPLAD15KP7.5CAe3
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1164A (1.164kA)
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP75CA 9522-mplad15kp-datasheet
MAPLAD15KP75CA
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP75CAe3 9522-mplad15kp-datasheet
MAPLAD15KP75CAe3
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 123A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MASMLJ110CA 10563-msml-datasheet
MASMLJ110CA
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16.8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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USD320C
USD320C
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 30A TO204AD
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-204AA (TO-3)
Voltage - DC Reverse (Vr) (Max): 20 V
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USD520
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
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USD535
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 35V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Current - Reverse Leakage @ Vr: 20 mA @ 35 V
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USD545
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 75A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 75A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 60 A
Current - Reverse Leakage @ Vr: 20 mA @ 45 V
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AT49BV6416T-70TI-T AT49BV6416%2C%20T.pdf
AT49BV6416T-70TI-T
Виробник: Microchip Technology
Description: IC FLASH 64MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 15µs
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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MIC4469BN MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf
MIC4469BN
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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MIC4469CN MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf
MIC4469CN
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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1N2063R 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE GP REV 500V 275A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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1N2063 1N4044-1N4056.pdf
Виробник: Microchip Technology
Description: DIODE GP 500V 275A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 275A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 75 µA @ 500 V
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AT28LV010-20TU-T doc0395F.pdf
AT28LV010-20TU-T
Виробник: Microchip Technology
Description: IC EEPROM 1MBIT PARALLEL 32TSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-TSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 128K x 8
DigiKey Programmable: Verified
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4445.97 грн
25+4120.28 грн
100+3959.30 грн
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AT28BV64B-20JU-T Atmel-0299-PEEPROM-AT28BV64B-Datasheet.pdf
AT28BV64B-20JU-T
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT PARALLEL 32PLCC
Packaging: Tape & Reel (TR)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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AT28BV64B-20JU-T Atmel-0299-PEEPROM-AT28BV64B-Datasheet.pdf
AT28BV64B-20JU-T
Виробник: Microchip Technology
Description: IC EEPROM 64KBIT PARALLEL 32PLCC
Packaging: Cut Tape (CT)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (13.97x11.43)
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+445.75 грн
25+412.96 грн
100+396.63 грн
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AT28LV010-20JU-T doc0395F.pdf
AT28LV010-20JU-T
Виробник: Microchip Technology
Description: IC EEPROM 1MBIT PARALLEL 32PLCC
Packaging: Cut Tape (CT)
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 3V ~ 3.6V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 32-PLCC (11.43x13.97)
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 200 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
на замовлення 1055 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4297.93 грн
25+3982.61 грн
100+3827.08 грн
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M1.5KE24A RF01008_rE.pdf
Виробник: Microchip Technology
Description: TVS DIODE 20.5VWM 33.2VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N827-1/TR
1N827-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827/TR 1N821UR-1N829UR-1_CDLL821-829A_CDI.pdf
1N827/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827-1E3
1N827-1E3
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827-1E3/TR
1N827-1E3/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JAN1N827-1 125462-lds-0220-datasheet
JAN1N827-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JAN1N827-1/TR
JAN1N827-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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1N827A/TR 1N821UR-1N829UR-1_CDLL821-829A_CDI.pdf
1N827A/TR
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827A-1 125462-lds-0220-datasheet
1N827A-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.89V 500MW DO204AH
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.89 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AE3
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Packaging: Bulk
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1N827A-1/TR 125462-lds-0220.pdf
1N827A-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.89V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.89 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827A-1E3/TR 125462-lds-0220.pdf
1N827A-1E3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 5.89V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.89 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANTX1N827-1/TR
JANTX1N827-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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1N827AE3/TR
1N827AE3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 400MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 400 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JAN1N827UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JAN1N827UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTX1N827UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTX1N827UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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1N827UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AUR-1/TR 125462-lds-0220.pdf
1N827AUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827E3
1N827E3
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AUR-1e3 11037-lds-0220-1.pdf
1N827AUR-1e3
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827AUR-1e3/TR 11037-lds-0220-1.pdf
1N827AUR-1e3/TR
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827E3/TR
1N827E3/TR
Виробник: Microchip Technology
Description: TEMPERATURE COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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JANTXV1N827-1/TR
JANTXV1N827-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANHCA1N827 14809-military-qualified-die-chip
JANHCA1N827
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTXV1N827UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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JANTXV1N827UR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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AC40T08A AC40T08A-5.5-4-Lane-MIPI-720p-LCD-Display-Module-With-maXTouch-DS50003687.pdf
Виробник: Microchip Technology
Description: EVAL BOARD FOR MIC2289
Packaging: Bulk
Function: LCD Display
Type: Display
Contents: Board(s)
Utilized IC / Part: MIC2289
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18531.45 грн
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JAN1N4485 1N4460-1N4496.1N6485-1N6491.pdf
JAN1N4485
Виробник: Microchip Technology
Description: DIODE ZENER 68V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 54.4 V
Qualification: MIL-PRF-19500/406
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ATMXT768E-ABR MXT768EKM%20flyer%20-%20US%20-%20low%20res.pdf
Виробник: Microchip Technology
Description: IC SENSOR MAXTOUCH 768CH
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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