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DSC1001DI1-080.0000T DSC1001DI1-080.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 80.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Supplier Device Package: 4-CDFN (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 80 MHz
Base Resonator: MEMS
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DSC1001DI1-001.8432T DSC1001DI1-001.8432T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 1.8432MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 1.8432 MHz
Base Resonator: MEMS
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DSC1001DI1-002.0000T DSC1001DI1-002.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 2.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 2 MHz
Base Resonator: MEMS
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DSC1001DI1-029.4912T DSC1001DI1-029.4912T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 29.4912MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 29.49152 MHz
Base Resonator: MEMS
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DSC1001DI1-036.0000T DSC1001DI1-036.0000T Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 36 MHz
Base Resonator: MEMS
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DSC1001DI1-027.0000T DSC1001DI1-027.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 27.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
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DSC1001DI1-030.0000T DSC1001DI1-030.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 30.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 30 MHz
Base Resonator: MEMS
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DSC1001DI1-007.3728T DSC1001DI1-007.3728T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 7.3728MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 7.3728 MHz
Base Resonator: MEMS
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DSC1001DI1-003.6864T DSC1001DI1-003.6864T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 3.6864MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.6864 MHz
Base Resonator: MEMS
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DSC1001DI1-005.0000T DSC1001DI1-005.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 5.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
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DSC1001DI1-004.0000T DSC1001DI1-004.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
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DSC1001DI1-018.4320T DSC1001DI1-018.4320T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 18.4320MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
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DSC1001DI1-020.0000T DSC1001DI1-020.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 20.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 20 MHz
Base Resonator: MEMS
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DSC1001DI1-024.5760T DSC1001DI1-024.5760T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 24.5760MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 24.576 MHz
Base Resonator: MEMS
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DSC1001DI1-033.3330T DSC1001DI1-033.3330T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 33.3330MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 33.333 MHz
Base Resonator: MEMS
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DSC1001DI1-016.0000T DSC1001DI1-016.0000T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 16.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 16 MHz
Base Resonator: MEMS
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DSC1001DI1-028.6360T DSC1001DI1-028.6360T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.636 MHz
Base Resonator: MEMS
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DSC1001DI1-028.6364T DSC1001DI1-028.6364T Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC., LOW POWER, 28.6364MHZ
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.6364 MHz
Base Resonator: MEMS
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CD4731A CD4731A Microchip Technology 8368-cd4728a-cd4764a-datasheet Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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CDLL4731A/TR CDLL4731A/TR Microchip Technology 8388-cdll4728-cdll4764a-datasheet Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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CDLL4731Ae3 CDLL4731Ae3 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N3768R Microchip Technology 8540-coe-18-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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1N2138 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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1N2131R Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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1N2137 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2135 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2131 Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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1N2137R Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2135R Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2137AR Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2138AR Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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1N2138A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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1N2135RA Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2135A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2137RA Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2131A Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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1N2135AR Microchip Technology S%2CR35.pdf Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N3209 Microchip Technology 8541-coe-20-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N3209R Microchip Technology 8541-coe-20-datasheet Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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PM50028B1-FEI Microchip Technology Switchtec-PFX-Gen-5-Sell-Sheet-00003776.pdf Description: PFX 28XG5 FANOUT PCIE SWITCH
Packaging: Tray
Interface: 2-Wire, GMII, GPIO, JTAG, PCIe, RMII, UART
Applications: Fanout PCIe Switch
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+29409.10 грн
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PM40028B1-F3EI PM40028B1-F3EI Microchip Technology 00002866D.pdf Description: IC PFX 28XG4, 28-LANE PCIE SWITC
Packaging: Tray
Package / Case: 753-BGA
Mounting Type: Surface Mount
Interface: PCI
Applications: Fanout PCIe Switch
Supplier Device Package: 753-BBGA (29x29)
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M1.5KE170A Microchip Technology 9459-m1-5ke-datasheet Description: TVS DIODE 145VWM 234VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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TVS328e3 TVS328e3 Microchip Technology Description: TVS DIODE 28VWM 46VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.7V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 150W
Power Line Protection: No
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TVS324e3 TVS324e3 Microchip Technology Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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tvs324e3/tr tvs324e3/tr Microchip Technology Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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TVS324/TR TVS324/TR Microchip Technology Description: TVS DIODE 24VWM 42VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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APT20M16LFLLG APT20M16LFLLG Microchip Technology APT20M16%28B2%2CL%29FLL.pdf Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1965.70 грн
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APT20M20B2FLLG APT20M20B2FLLG Microchip Technology 6743-apt20m20b2fllg-apt20m20lfllg-datasheet Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
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APT20M18B2VRG APT20M18B2VRG Microchip Technology 6741-apt20m18b2vrg-apt20m18lvrg-datasheet Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
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APT10M09LVFRG APT10M09LVFRG Microchip Technology apt10m09%28b2%2Cl%29vfr.pdf Description: MOSFET N-CH 100V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
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APT20M20LFLLG APT20M20LFLLG Microchip Technology 6743-apt20m20b2fllg-apt20m20lfllg-datasheet Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
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1N5810 Microchip Technology Description: DIODE GEN PURP 6A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Axial
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
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EV33A17A Microchip Technology Description: PIC32CK SG01 CURIOSITY ULTRA
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: PIC32
Utilized IC / Part: PIC32CK SG01
Platform: Curiosity Ultra
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PIC32MZ1025DAH176T-I/2J PIC32MZ1025DAH176T-I/2J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
700+1362.49 грн
Мінімальне замовлення: 700
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PIC32MZ1025DAH176T-I/2J PIC32MZ1025DAH176T-I/2J Microchip Technology PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
1+1639.70 грн
25+1448.19 грн
100+1312.03 грн
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JAN1N5806/TR JAN1N5806/TR Microchip Technology 132686-lds-0211-datasheet Description: DIODE GEN PURP 150V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTX1N5806/TR JANTX1N5806/TR Microchip Technology 132686-lds-0211-datasheet Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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1N5806e3/TR 1N5806e3/TR Microchip Technology 11055-sd40a-datasheet Description: DIODE GEN PURP 150V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JANTXV1N5806 JANTXV1N5806 Microchip Technology Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTXV1N5806/TR JANTXV1N5806/TR Microchip Technology 132686-lds-0211-datasheet Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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DSC1001DI1-080.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-080.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 80.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 16.6mA
Supplier Device Package: 4-CDFN (2.5x2)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 80 MHz
Base Resonator: MEMS
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DSC1001DI1-001.8432T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-001.8432T
Виробник: Microchip Technology
Description: MEMS OSC XO 1.8432MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 1.8432 MHz
Base Resonator: MEMS
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DSC1001DI1-002.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-002.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 2 MHz
Base Resonator: MEMS
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DSC1001DI1-029.4912T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-029.4912T
Виробник: Microchip Technology
Description: MEMS OSC XO 29.4912MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 29.49152 MHz
Base Resonator: MEMS
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DSC1001DI1-036.0000T
DSC1001DI1-036.0000T
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 36 MHz
Base Resonator: MEMS
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DSC1001DI1-027.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-027.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 27.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 27 MHz
Base Resonator: MEMS
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DSC1001DI1-030.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-030.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 30.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 30 MHz
Base Resonator: MEMS
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DSC1001DI1-007.3728T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-007.3728T
Виробник: Microchip Technology
Description: MEMS OSC XO 7.3728MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 7.3728 MHz
Base Resonator: MEMS
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DSC1001DI1-003.6864T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-003.6864T
Виробник: Microchip Technology
Description: MEMS OSC XO 3.6864MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 3.6864 MHz
Base Resonator: MEMS
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DSC1001DI1-005.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-005.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 5.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 5 MHz
Base Resonator: MEMS
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DSC1001DI1-004.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-004.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 4.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 4 MHz
Base Resonator: MEMS
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DSC1001DI1-018.4320T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-018.4320T
Виробник: Microchip Technology
Description: MEMS OSC XO 18.4320MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 18.432 MHz
Base Resonator: MEMS
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DSC1001DI1-020.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-020.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 20.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 20 MHz
Base Resonator: MEMS
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DSC1001DI1-024.5760T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-024.5760T
Виробник: Microchip Technology
Description: MEMS OSC XO 24.5760MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 24.576 MHz
Base Resonator: MEMS
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DSC1001DI1-033.3330T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-033.3330T
Виробник: Microchip Technology
Description: MEMS OSC XO 33.3330MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 33.333 MHz
Base Resonator: MEMS
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DSC1001DI1-016.0000T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-016.0000T
Виробник: Microchip Technology
Description: MEMS OSC XO 16.0000MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 8mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 16 MHz
Base Resonator: MEMS
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DSC1001DI1-028.6360T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-028.6360T
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-85C SMD
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.636 MHz
Base Resonator: MEMS
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DSC1001DI1-028.6364T DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001DI1-028.6364T
Виробник: Microchip Technology
Description: MEMS OSC., LOW POWER, 28.6364MHZ
Packaging: Strip
Package / Case: 4-VDFN
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 28.6364 MHz
Base Resonator: MEMS
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CD4731A 8368-cd4728a-cd4764a-datasheet
CD4731A
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Die
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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CDLL4731A/TR 8388-cdll4728-cdll4764a-datasheet
CDLL4731A/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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CDLL4731Ae3
CDLL4731Ae3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N3768R 8540-coe-18-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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1N2138 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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1N2131R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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1N2137 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2135 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2131 S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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1N2137R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2135R S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2137AR S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2138AR S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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1N2138A S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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1N2135RA S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2135A S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N2137RA S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 500V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 500 V
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1N2131A S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
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1N2135AR S%2CR35.pdf
Виробник: Microchip Technology
Description: DIODE GEN PURP REV 400V 70A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 70A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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1N3209 8541-coe-20-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N3209R 8541-coe-20-datasheet
Виробник: Microchip Technology
Description: STANDARD RECTIFIER
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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PM50028B1-FEI Switchtec-PFX-Gen-5-Sell-Sheet-00003776.pdf
Виробник: Microchip Technology
Description: PFX 28XG5 FANOUT PCIE SWITCH
Packaging: Tray
Interface: 2-Wire, GMII, GPIO, JTAG, PCIe, RMII, UART
Applications: Fanout PCIe Switch
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+29409.10 грн
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PM40028B1-F3EI 00002866D.pdf
PM40028B1-F3EI
Виробник: Microchip Technology
Description: IC PFX 28XG4, 28-LANE PCIE SWITC
Packaging: Tray
Package / Case: 753-BGA
Mounting Type: Surface Mount
Interface: PCI
Applications: Fanout PCIe Switch
Supplier Device Package: 753-BBGA (29x29)
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M1.5KE170A 9459-m1-5ke-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 145VWM 234VC CASE-1
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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TVS328e3
TVS328e3
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 46VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 30.7V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 150W
Power Line Protection: No
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TVS324e3
TVS324e3
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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tvs324e3/tr
tvs324e3/tr
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 42VC A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, SQ-MELF
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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TVS324/TR
TVS324/TR
Виробник: Microchip Technology
Description: TVS DIODE 24VWM 42VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: A, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.4V
Voltage - Clamping (Max) @ Ipp: 42V
Power - Peak Pulse: 150W
Power Line Protection: No
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APT20M16LFLLG APT20M16%28B2%2CL%29FLL.pdf
APT20M16LFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7220 pF @ 25 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1965.70 грн
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APT20M20B2FLLG 6743-apt20m20b2fllg-apt20m20lfllg-datasheet
APT20M20B2FLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
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APT20M18B2VRG 6741-apt20m18b2vrg-apt20m18lvrg-datasheet
APT20M18B2VRG
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 100A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
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APT10M09LVFRG apt10m09%28b2%2Cl%29vfr.pdf
APT10M09LVFRG
Виробник: Microchip Technology
Description: MOSFET N-CH 100V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
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APT20M20LFLLG 6743-apt20m20b2fllg-apt20m20lfllg-datasheet
APT20M20LFLLG
Виробник: Microchip Technology
Description: MOSFET N-CH 200V 100A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6850 pF @ 25 V
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1N5810
Виробник: Microchip Technology
Description: DIODE GEN PURP 6A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Axial
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
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EV33A17A
Виробник: Microchip Technology
Description: PIC32CK SG01 CURIOSITY ULTRA
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: PIC32
Utilized IC / Part: PIC32CK SG01
Platform: Curiosity Ultra
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PIC32MZ1025DAH176T-I/2J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ1025DAH176T-I/2J
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
700+1362.49 грн
Мінімальне замовлення: 700
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PIC32MZ1025DAH176T-I/2J PIC32MZ-Graphics-DA-Family-Data-Sheet-DS60001361J.pdf
PIC32MZ1025DAH176T-I/2J
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Cut Tape (CT)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1639.70 грн
25+1448.19 грн
100+1312.03 грн
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JAN1N5806/TR 132686-lds-0211-datasheet
JAN1N5806/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTX1N5806/TR 132686-lds-0211-datasheet
JANTX1N5806/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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1N5806e3/TR 11055-sd40a-datasheet
1N5806e3/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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JANTXV1N5806
JANTXV1N5806
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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JANTXV1N5806/TR 132686-lds-0211-datasheet
JANTXV1N5806/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
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