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M15KP260A M15KP260A Microchip Technology 9460-rf01011-m15kp-rev-e-datasheet Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP260Ae3 M15KP260Ae3 Microchip Technology 9460-rf01011-m15kp-rev-e-datasheet Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP40A M15KP40A Microchip Technology 9460-rf01011-m15kp-rev-e-datasheet Description: TVS DIODE 40VWM 65.8VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 228A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 65.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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PIC18F27Q10T-E/STX Microchip Technology Description: 128KB FLASH, 3.6KB RAM, 256B EEP
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 3.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x10b SAR; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-VQFN (4x4)
Number of I/O: 25
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WP34C2R4NFEI-400B2 Microchip Technology 2110882_WinPath3_pb_127961.pdf Description: WP3 4C2R4 400 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+14518.20 грн
25+11620.09 грн
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WP32C2M6NELI-450B2 Microchip Technology Description: WP3 2C2M6 450 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+52339.10 грн
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SAM9X75D2GT-I/4TB SAM9X75D2GT-I/4TB Microchip Technology SAM9X75-SiP-Data-Sheet-DS60001827.pdf Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Tape & Reel (TR)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
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SAM9X75D2GT-I/4TB SAM9X75D2GT-I/4TB Microchip Technology SAM9X75-SiP-Data-Sheet-DS60001827.pdf Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Cut Tape (CT)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
1+1741.12 грн
25+1397.27 грн
100+1349.59 грн
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SAMA7G54D2GT-I/4UB SAMA7G54D2GT-I/4UB Microchip Technology SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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SAMA7G54D2GT-I/4UB SAMA7G54D2GT-I/4UB Microchip Technology SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Cut Tape (CT)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
на замовлення 805 шт:
термін постачання 21-31 дні (днів)
1+1382.92 грн
25+1109.66 грн
100+1071.60 грн
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M15KP90CA/TR M15KP90CA/TR Microchip Technology Description: TVS 90V 5% 15000W BI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP90CA MAPLAD15KP90CA Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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UES1001 UES1001 Microchip Technology Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1001/TR UES1001/TR Microchip Technology Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1002/TR UES1002/TR Microchip Technology Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1002SM UES1002SM Microchip Technology Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1003SM-1 UES1003SM-1 Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1002SM-1 UES1002SM-1 Microchip Technology Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1001SM UES1001SM Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UES1003SM/TR Microchip Technology Description: RECTIFIER UFR,FRR
Packaging: Tape & Reel (TR)
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UES1002SM/TR UES1002SM/TR Microchip Technology Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1002SM-1/TR UES1002SM-1/TR Microchip Technology Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1001SM/TR UES1001SM/TR Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UES1003SM-1/TR UES1003SM-1/TR Microchip Technology Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1003 UES1003 Microchip Technology Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1003/TR UES1003/TR Microchip Technology Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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MPLAD7.5KP13A/TR Microchip Technology Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M5KP13A M5KP13A Microchip Technology 9461-m5kp-pdf Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M5KP13A/TR Microchip Technology Description: TVS 13V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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AT90USB82-16MUR AT90USB82-16MUR Microchip Technology 7707S.pdf Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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AT90USB82-16MUR AT90USB82-16MUR Microchip Technology 7707S.pdf Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 2763 шт:
термін постачання 21-31 дні (днів)
2+256.78 грн
25+227.37 грн
100+206.63 грн
Мінімальне замовлення: 2
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AT90USB82-16MU AT90USB82-16MU Microchip Technology 7707S.pdf description Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
2+246.32 грн
25+218.06 грн
100+195.91 грн
Мінімальне замовлення: 2
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2N2988 2N2988 Microchip Technology Description: TRANS PNP 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2992 2N2992 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2990 2N2990 Microchip Technology Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2994 2N2994 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2324 Microchip Technology 6024-2n2323-datasheet Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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2N2324A Microchip Technology 6024-2n2323-datasheet Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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APT100GF60JU2 APT100GF60JU2 Microchip Technology APT100GF60JU2.pdf Description: IGBT MOD 600V 120A 416W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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2N3749 2N3749 Microchip Technology Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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Jantxv2N3749 Microchip Technology 132818-lds-0328-datasheet Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: MIL-PRF-19500/315
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2N2892 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N2877 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
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2N3746 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N3744 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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2N3751 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
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2N5326 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N5328 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N5411 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 52 W
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2N5410 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
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DSC1001AI1-049.1520 DSC1001AI1-049.1520 Microchip Technology DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.152 MHz
Base Resonator: MEMS
на замовлення 643 шт:
термін постачання 21-31 дні (днів)
3+144.09 грн
10+136.19 грн
50+134.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
24CS512T-I/Q4B 24CS512T-I/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-I/Q4B 24CS512T-I/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 4346 шт:
термін постачання 21-31 дні (днів)
4+98.20 грн
25+90.20 грн
100+86.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-I/OT 24CS512T-I/OT Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-I/OT 24CS512T-I/OT Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2787 шт:
термін постачання 21-31 дні (днів)
4+98.20 грн
25+90.20 грн
100+86.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-I/MS 24CS512T-I/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+94.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
24CS512T-I/MS 24CS512T-I/MS Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 4933 шт:
термін постачання 21-31 дні (днів)
4+102.23 грн
25+95.56 грн
100+90.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-E/Q4B 24CS512T-E/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-E/Q4B 24CS512T-E/Q4B Microchip Technology 24CS512_2021.pdf Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)
4+102.23 грн
25+95.56 грн
100+90.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-E/SN 24CS512T-E/SN Microchip Technology 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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M15KP260A 9460-rf01011-m15kp-rev-e-datasheet
M15KP260A
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP260Ae3 9460-rf01011-m15kp-rev-e-datasheet
M15KP260Ae3
Виробник: Microchip Technology
Description: TVS DIODE 260VWM 419VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 260V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 289V
Voltage - Clamping (Max) @ Ipp: 419V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M15KP40A 9460-rf01011-m15kp-rev-e-datasheet
M15KP40A
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 65.8VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 228A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 65.8V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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PIC18F27Q10T-E/STX
Виробник: Microchip Technology
Description: 128KB FLASH, 3.6KB RAM, 256B EEP
Packaging: Tape & Reel (TR)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 128KB (64K x 16)
RAM Size: 3.53K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: PIC
Data Converters: A/D 24x10b SAR; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-VQFN (4x4)
Number of I/O: 25
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WP34C2R4NFEI-400B2 2110882_WinPath3_pb_127961.pdf
Виробник: Microchip Technology
Description: WP3 4C2R4 400 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14518.20 грн
25+11620.09 грн
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WP32C2M6NELI-450B2
Виробник: Microchip Technology
Description: WP3 2C2M6 450 MHZ, LF BALLS, PBF
Packaging: Tray
Package / Case: 896-BGA
Mounting Type: Surface Mount
Interface: I2C, RMII, UART
Program Memory Type: SRAM
Applications: Network Processor
Core Processor: MIPS32® 34Kc™
Supplier Device Package: 896-B1BGA (31x31)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+52339.10 грн
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SAM9X75D2GT-I/4TB SAM9X75-SiP-Data-Sheet-DS60001827.pdf
SAM9X75D2GT-I/4TB
Виробник: Microchip Technology
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Tape & Reel (TR)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
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SAM9X75D2GT-I/4TB SAM9X75-SiP-Data-Sheet-DS60001827.pdf
SAM9X75D2GT-I/4TB
Виробник: Microchip Technology
Description: ARM926 MPU,2GBIT DDR3L,MIPI,LVDS
Packaging: Cut Tape (CT)
Package / Case: 243-LFBGA
Mounting Type: Surface Mount
Speed: 800MHz
Operating Temperature: -40°C ~ 85°C (TA)
Core Processor: ARM926EJ-S
Voltage - I/O: 1.8V, 2.5V, 3.3V
Supplier Device Package: 243-TFBGA (16x16)
Ethernet: 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
RAM Controllers: DDR2, DDR3, DDR3L, SDRAM
Graphics Acceleration: No
Display & Interface Controllers: LCD, LVDS, MIPI/DSI
Security Features: AES, Boot Security, Cryptography, DES, SHA, TRNG
Additional Interfaces: CANbus, EBI/EMI, I2C, MMC/SD/SDIO, QSPI, SPI, UART/USART, USB
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1741.12 грн
25+1397.27 грн
100+1349.59 грн
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SAMA7G54D2GT-I/4UB SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf
SAMA7G54D2GT-I/4UB
Виробник: Microchip Technology
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Tape & Reel (TR)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
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SAMA7G54D2GT-I/4UB SAMA7G5-SIP-Series-Data-Sheet-DS50003577.pdf
SAMA7G54D2GT-I/4UB
Виробник: Microchip Technology
Description: CORTEX-A7 MPU, 2GBIT DDR3, BGA,I
Packaging: Cut Tape (CT)
Package / Case: 427-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 1.35V
Supplier Device Package: 427-TFBGA (21x18)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB (3)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
на замовлення 805 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1382.92 грн
25+1109.66 грн
100+1071.60 грн
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M15KP90CA/TR
M15KP90CA/TR
Виробник: Microchip Technology
Description: TVS 90V 5% 15000W BI
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP90CA 9522-mplad15kp-datasheet
MAPLAD15KP90CA
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 102A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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UES1001
UES1001
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1001/TR
UES1001/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1002/TR
UES1002/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1002SM
UES1002SM
Виробник: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1003SM-1
UES1003SM-1
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1002SM-1
UES1002SM-1
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1001SM
UES1001SM
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UES1003SM/TR
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Packaging: Tape & Reel (TR)
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UES1002SM/TR
UES1002SM/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Supplier Device Package: A, Axial
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1002SM-1/TR
UES1002SM-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1001SM/TR
UES1001SM/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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UES1003SM-1/TR
UES1003SM-1/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 1A A SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1003
UES1003
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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UES1003/TR
UES1003/TR
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
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MPLAD7.5KP13A/TR
Виробник: Microchip Technology
Description: 13V, 5%, 8000W, UNI, MINI-PLAD,
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 349A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M5KP13A 9461-m5kp-pdf
M5KP13A
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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M5KP13A/TR
Виробник: Microchip Technology
Description: TVS 13V 5% 5000W UNI
Packaging: Tape & Reel (TR)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 233A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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AT90USB82-16MUR 7707S.pdf
AT90USB82-16MUR
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
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AT90USB82-16MUR 7707S.pdf
AT90USB82-16MUR
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 2763 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+256.78 грн
25+227.37 грн
100+206.63 грн
Мінімальне замовлення: 2
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AT90USB82-16MU description 7707S.pdf
AT90USB82-16MU
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 32VQFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 32-VQFN (5x5)
Number of I/O: 22
DigiKey Programmable: Not Verified
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.32 грн
25+218.06 грн
100+195.91 грн
Мінімальне замовлення: 2
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2N2988
2N2988
Виробник: Microchip Technology
Description: TRANS PNP 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 20µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2992
2N2992
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2990
2N2990
Виробник: Microchip Technology
Description: TRANS NPN 100V 1A TO-5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2994
2N2994
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 50µA, 200µA
Supplier Device Package: TO-5AA
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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2N2324 6024-2n2323-datasheet
Виробник: Microchip Technology
Description: SCR 100V 200UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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2N2324A 6024-2n2323-datasheet
Виробник: Microchip Technology
Description: SCR 100V 20UA TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Supplier Device Package: TO-5
Grade: Military
Voltage - Off State: 100 V
Qualification: MIL-PRF-19500/276
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APT100GF60JU2 APT100GF60JU2.pdf
APT100GF60JU2
Виробник: Microchip Technology
Description: IGBT MOD 600V 120A 416W SOT227
Packaging: Bulk
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 12.3 nF @ 25 V
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2N3749
2N3749
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
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Jantxv2N3749 132818-lds-0328-datasheet
Виробник: Microchip Technology
Description: TRANS NPN 80V 5A TO111
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
Supplier Device Package: TO-111
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Qualification: MIL-PRF-19500/315
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2N2892
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N2877
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
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2N3746
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N3744
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 30 W
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2N3751
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 30 W
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2N5326
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500µA, 1mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N5328
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
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2N5411
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 52 W
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2N5410
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-111-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200µA, 2mA
Supplier Device Package: TO-111
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 52 W
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DSC1001AI1-049.1520 DSC1001-3-4-1.8V-3.3V-Low-Power-Precision-CMOS-Oscillators-DS20005529.pdf
DSC1001AI1-049.1520
Виробник: Microchip Technology
Description: MEMS OSC XO 49.1520MHZ CMOS SMD
Packaging: Strip
Package / Case: 4-VDFN Exposed Pad
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.7V ~ 3.6V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 49.152 MHz
Base Resonator: MEMS
на замовлення 643 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.09 грн
10+136.19 грн
50+134.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
24CS512T-I/Q4B 24CS512_2021.pdf
24CS512T-I/Q4B
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-I/Q4B 24CS512_2021.pdf
24CS512T-I/Q4B
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 4346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.20 грн
25+90.20 грн
100+86.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-I/OT 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/OT
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-I/OT 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/OT
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+98.20 грн
25+90.20 грн
100+86.37 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-I/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/MS
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+94.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
24CS512T-I/MS 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-I/MS
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 4933 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.23 грн
25+95.56 грн
100+90.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-E/Q4B 24CS512_2021.pdf
24CS512T-E/Q4B
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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24CS512T-E/Q4B 24CS512_2021.pdf
24CS512T-E/Q4B
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
на замовлення 4793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.23 грн
25+95.56 грн
100+90.96 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
24CS512T-E/SN 24CS512-512-Kbit-3.4-MHz-I2C-Serial-EEPROM-with-128-Bit-Serial-Number-and-Enhanced-Software-Write-Protection.pdf
24CS512T-E/SN
Виробник: Microchip Technology
Description: IC EEPROM 512KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3.4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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