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MCP6H01T-E/LT MCP6H01T-E/LT Microchip Technology 22243D.pdf Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
3000+45.40 грн
Мінімальне замовлення: 3000
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MCP6H01T-E/OT MCP6H01T-E/OT Microchip Technology 22243D.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
3000+46.93 грн
Мінімальне замовлення: 3000
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SST12LF03-Q3DE SST12LF03-Q3DE Microchip Technology 75010B.pdf Description: IC MOD FEM 11B/G/N BT 20-UQFN
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PIC24F08KL302T-I/MQ PIC24F08KL302T-I/MQ Microchip Technology PIC24F16KL402-Family-Data-Sheet-DS30001037D.pdf Description: IC MCU 16BIT 8KB FLASH 28QFN
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MCP6H01T-E/LT MCP6H01T-E/LT Microchip Technology 22243D.pdf Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
6+60.34 грн
25+48.65 грн
100+43.72 грн
Мінімальне замовлення: 6
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MCP6H01T-E/OT MCP6H01T-E/OT Microchip Technology 22243D.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 71396 шт:
термін постачання 21-31 дні (днів)
6+61.92 грн
25+50.30 грн
100+45.19 грн
Мінімальне замовлення: 6
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SST12LF03-Q3DE SST12LF03-Q3DE Microchip Technology 75010B.pdf Description: IC MOD FEM 11B/G/N BT 20-UQFN
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APT106N60B2C6 APT106N60B2C6 Microchip Technology 6586-apt106n60b2c6-apt106n60lc6-datasheet Description: MOSFET N-CH 600V 106A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+1224.18 грн
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APT150GN120JDQ4 APT150GN120JDQ4 Microchip Technology 6632-apt150gn120jdq4-datasheet Description: IGBT MOD 1200V 215A 625W ISOTOP
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+5461.98 грн
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APT150GN60B2G APT150GN60B2G Microchip Technology 6633-apt150gn60b2g-datasheet Description: IGBT 600V 220A 536W SOT227
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APT150GN60LDQ4G APT150GN60LDQ4G Microchip Technology 6634-apt150gn60ldq4g-datasheet Description: IGBT TRENCH FS 600V 220A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/430ns
Switching Energy: 8.81mJ (on), 4.295mJ (off)
Test Condition: 400V, 150A, 1Ohm, 15V
Gate Charge: 970 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 536 W
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APT15D120BG APT15D120BG Microchip Technology 6638-apt15d120bg-apt15d120sg-datasheet Description: DIODE GEN PURP 1.2KV 15A TO247
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APT30F60J APT30F60J Microchip Technology 6894-apt30f60j-datasheet Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
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APT30GS60BRDQ2G APT30GS60BRDQ2G Microchip Technology 6905-apt30gs60brdq2g-apt30gs60srdq2g-datasheet Description: IGBT 600V 54A 250W SOT227
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/360ns
Switching Energy: 570µJ (off)
Test Condition: 400V, 30A, 9.1Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 113 A
Power - Max: 250 W
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APT30N60BC6 APT30N60BC6 Microchip Technology 77169-apt30n60bc6-apt30n60sc6-datasheet Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
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APT35GA90B APT35GA90B Microchip Technology 123658-apt35ga90b-apt35ga90s-datasheet Description: IGBT 900V 63A 290W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/104ns
Switching Energy: 642µJ (on), 382µJ (off)
Test Condition: 600V, 18A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 290 W
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APT36GA60B APT36GA60B Microchip Technology 123674-apt36ga60b-apt36ga60s-datasheet Description: IGBT PT 600V 65A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 307µJ (on), 254µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 109 A
Power - Max: 290 W
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APT36GA60BD15 APT36GA60BD15 Microchip Technology 122681-apt36n90bc3g-datasheet Description: IGBT 600V 65A 290W TO-247
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APT38N60BC6 APT38N60BC6 Microchip Technology 122682-apt38n60bc6-apt38n60sc6-datasheet Description: MOSFET N-CH 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
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APT43F60L APT43F60L Microchip Technology 7031-apt43f60b2-apt43f60l-datasheet Description: MOSFET N-CH 600V 45A TO264
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APT43GA90B APT43GA90B Microchip Technology 123659-apt43ga90b-apt43ga90s-datasheet Description: IGBT PT 900V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 875µJ (on), 425µJ (off)
Test Condition: 600V, 25A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 129 A
Power - Max: 337 W
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
1+466.01 грн
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APT44GA60B APT44GA60B Microchip Technology 123660-apt44ga60b-apt44ga60s-datasheet Description: IGBT 600V 78A 337W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/84ns
Switching Energy: 409µJ (on), 258µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
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APT44GA60BD30 APT44GA60BD30 Microchip Technology 123648-apt44ga60bd30-apt44ga60sd30-datasheet Description: IGBT 600V 78A 337W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/84ns
Switching Energy: 409µJ (on), 258µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
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APT46GA90JD40 APT46GA90JD40 Microchip Technology 123670-apt46ga90jd40-datasheet Description: IGBT MODULE 900V 87A 284W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 87 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
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APT47F60J APT47F60J Microchip Technology 7058-apt47f60j-datasheet Description: MOSFET N-CH 600V 49A ISOTOP
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APT47GA60JD40 APT47GA60JD40 Microchip Technology 123663-apt47ga60jd40-datasheet Description: IGBT 600V 87A 283W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 87 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
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APT53N60BC6 APT53N60BC6 Microchip Technology APT53N60BC6.pdf Description: MOSFET N-CH 600V 53A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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APT54GA60B APT54GA60B Microchip Technology 123655-apt54ga60b-apt54ga60s-datasheet Description: IGBT 600V 96A 416W TO-247
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APT56F50B2 APT56F50B2 Microchip Technology 7147-apt56f50b2-apt56f50l-datasheet Description: MOSFET N-CH 500V 56A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+985.22 грн
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APT56F50L APT56F50L Microchip Technology 7147-apt56f50b2-apt56f50l-datasheet Description: MOSFET N-CH 500V 56A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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APT60GA60JD60 APT60GA60JD60 Microchip Technology 123665-apt60ga60jd60-d-datasheet Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
на замовлення 1248 шт:
термін постачання 21-31 дні (днів)
1+2175.26 грн
100+1700.33 грн
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APT64GA90B2D30 APT64GA90B2D30 Microchip Technology 123651-apt80ga90b-apt80ga90s-datasheet Description: IGBT PT 900V 117A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/131ns
Switching Energy: 1192µJ (on), 1088µJ (off)
Test Condition: 600V, 38A, 4.7Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 117 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 193 A
Power - Max: 500 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+839.14 грн
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APT66F60B2 APT66F60B2 Microchip Technology 7222-apt66f60b2-apt66f60l-datasheet Description: MOSFET N-CH 600V 70A T-MAX
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APT66F60L APT66F60L Microchip Technology 7222-apt66f60b2-apt66f60l-datasheet Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT68GA60B APT68GA60B Microchip Technology 123653-apt68ga60b-apt68ga60s-datasheet Description: IGBT 600V 121A 520W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/133ns
Switching Energy: 715µJ (on), 607µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 298 nC
Part Status: Active
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 202 A
Power - Max: 520 W
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+642.26 грн
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APT68GA60B2D40 APT68GA60B2D40 Microchip Technology 123666-apt68ga60b2d40-apt68ga60ld40-datasheet Description: IGBT 600V 121A 520W TO-247
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APT68GA60LD40 APT68GA60LD40 Microchip Technology 123666-apt68ga60b2d40-apt68ga60ld40-datasheet Description: IGBT 600V 121A 520W TO-264
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APT75F50B2 APT75F50B2 Microchip Technology 7244-apt75f50b2-apt75f50l-datasheet Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT75F50L APT75F50L Microchip Technology 7244-apt75f50b2-apt75f50l-datasheet Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT77N60BC6 APT77N60BC6 Microchip Technology 77173-apt77n60bc6-apt77n60sc6-datasheet Description: MOSFET N-CH 600V 77A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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APT80F60J APT80F60J Microchip Technology 123471-apt80f60j-datasheet Description: MOSFET N-CH 600V 84A ISOTOP
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APT84F50L APT84F50L Microchip Technology 7299-apt84f50b2m-apt84f50l-datasheet Description: MOSFET N-CH 500V 84A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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USB2514B-AEZC USB2514B-AEZC Microchip Technology 00001692C.pdf Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7734 шт:
термін постачання 21-31 дні (днів)
2+165.13 грн
25+132.41 грн
100+128.55 грн
Мінімальне замовлення: 2
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USB2241-AEZG-06 USB2241-AEZG-06 Microchip Technology 00001979A.pdf Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
2+200.85 грн
25+159.53 грн
100+144.91 грн
Мінімальне замовлення: 2
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24C00T-E/MNY 24C00T-E/MNY Microchip Technology 24AA00-24LC00-24C00-Data-Sheet-20001178J.pdf Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
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24LCS52T-I/MNY 24LCS52T-I/MNY Microchip Technology 21166K.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
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25AA040AT-I/MNY 25AA040AT-I/MNY Microchip Technology 21827H.pdf Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-E/MNY 25LC040AT-E/MNY Microchip Technology 21827H.pdf Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-I/MNY 25LC040AT-I/MNY Microchip Technology 21827H.pdf Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C46CT-E/MNY 93C46CT-E/MNY Microchip Technology 20001749K.pdf Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93C56AT-E/MNY 93C56AT-E/MNY Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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93C56BT-E/MNY 93C56BT-E/MNY Microchip Technology filehandler.aspx?ddocname=en013939 Description: IC EEPROM 2K SPI 2MHZ 8TDFN
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93C56CT-E/MNY 93C56CT-E/MNY Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
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93C66AT-E/MNY 93C66AT-E/MNY Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C66BT-E/MNY 93C66BT-E/MNY Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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93C66CT-E/MNY 93C66CT-E/MNY Microchip Technology filehandler.aspx?ddocname=en011819 Description: IC EEPROM 4KBIT 3MHZ 8TDFN
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93C76CT-E/MNY 93C76CT-E/MNY Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C86CT-E/MNY 93C86CT-E/MNY Microchip Technology 21797L.pdf Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
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93LC46CT-E/MNY 93LC46CT-E/MNY Microchip Technology 20001749K.pdf Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93LC56AT-E/MNY 93LC56AT-E/MNY Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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MCP6H01T-E/LT 22243D.pdf
MCP6H01T-E/LT
Виробник: Microchip Technology
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+45.40 грн
Мінімальне замовлення: 3000
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MCP6H01T-E/OT 22243D.pdf
MCP6H01T-E/OT
Виробник: Microchip Technology
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+46.93 грн
Мінімальне замовлення: 3000
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SST12LF03-Q3DE 75010B.pdf
SST12LF03-Q3DE
Виробник: Microchip Technology
Description: IC MOD FEM 11B/G/N BT 20-UQFN
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PIC24F08KL302T-I/MQ PIC24F16KL402-Family-Data-Sheet-DS30001037D.pdf
PIC24F08KL302T-I/MQ
Виробник: Microchip Technology
Description: IC MCU 16BIT 8KB FLASH 28QFN
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MCP6H01T-E/LT 22243D.pdf
MCP6H01T-E/LT
Виробник: Microchip Technology
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.34 грн
25+48.65 грн
100+43.72 грн
Мінімальне замовлення: 6
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MCP6H01T-E/OT 22243D.pdf
MCP6H01T-E/OT
Виробник: Microchip Technology
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 135µA
Slew Rate: 0.8V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 10 pA
Voltage - Input Offset: 700 µV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 3.5 V
Voltage - Supply Span (Max): 16 V
на замовлення 71396 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.92 грн
25+50.30 грн
100+45.19 грн
Мінімальне замовлення: 6
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SST12LF03-Q3DE 75010B.pdf
SST12LF03-Q3DE
Виробник: Microchip Technology
Description: IC MOD FEM 11B/G/N BT 20-UQFN
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APT106N60B2C6 6586-apt106n60b2c6-apt106n60lc6-datasheet
APT106N60B2C6
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 106A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 53A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.4mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 308 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8390 pF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1224.18 грн
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APT150GN120JDQ4 6632-apt150gn120jdq4-datasheet
APT150GN120JDQ4
Виробник: Microchip Technology
Description: IGBT MOD 1200V 215A 625W ISOTOP
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5461.98 грн
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APT150GN60B2G 6633-apt150gn60b2g-datasheet
APT150GN60B2G
Виробник: Microchip Technology
Description: IGBT 600V 220A 536W SOT227
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APT150GN60LDQ4G 6634-apt150gn60ldq4g-datasheet
APT150GN60LDQ4G
Виробник: Microchip Technology
Description: IGBT TRENCH FS 600V 220A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 150A
Supplier Device Package: TO-264 [L]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/430ns
Switching Energy: 8.81mJ (on), 4.295mJ (off)
Test Condition: 400V, 150A, 1Ohm, 15V
Gate Charge: 970 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Power - Max: 536 W
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APT15D120BG 6638-apt15d120bg-apt15d120sg-datasheet
APT15D120BG
Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 15A TO247
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APT30F60J 6894-apt30f60j-datasheet
APT30F60J
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Power Dissipation (Max): 355W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
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APT30GS60BRDQ2G 6905-apt30gs60brdq2g-apt30gs60srdq2g-datasheet
APT30GS60BRDQ2G
Виробник: Microchip Technology
Description: IGBT 600V 54A 250W SOT227
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/360ns
Switching Energy: 570µJ (off)
Test Condition: 400V, 30A, 9.1Ohm, 15V
Gate Charge: 145 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 113 A
Power - Max: 250 W
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APT30N60BC6 77169-apt30n60bc6-apt30n60sc6-datasheet
APT30N60BC6
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
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APT35GA90B 123658-apt35ga90b-apt35ga90s-datasheet
APT35GA90B
Виробник: Microchip Technology
Description: IGBT 900V 63A 290W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/104ns
Switching Energy: 642µJ (on), 382µJ (off)
Test Condition: 600V, 18A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 290 W
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APT36GA60B 123674-apt36ga60b-apt36ga60s-datasheet
APT36GA60B
Виробник: Microchip Technology
Description: IGBT PT 600V 65A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 307µJ (on), 254µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 109 A
Power - Max: 290 W
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APT36GA60BD15 122681-apt36n90bc3g-datasheet
APT36GA60BD15
Виробник: Microchip Technology
Description: IGBT 600V 65A 290W TO-247
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APT38N60BC6 122682-apt38n60bc6-apt38n60sc6-datasheet
APT38N60BC6
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
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APT43F60L 7031-apt43f60b2-apt43f60l-datasheet
APT43F60L
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 45A TO264
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APT43GA90B 123659-apt43ga90b-apt43ga90s-datasheet
APT43GA90B
Виробник: Microchip Technology
Description: IGBT PT 900V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 875µJ (on), 425µJ (off)
Test Condition: 600V, 25A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 129 A
Power - Max: 337 W
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+466.01 грн
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APT44GA60B 123660-apt44ga60b-apt44ga60s-datasheet
APT44GA60B
Виробник: Microchip Technology
Description: IGBT 600V 78A 337W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/84ns
Switching Energy: 409µJ (on), 258µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
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APT44GA60BD30 123648-apt44ga60bd30-apt44ga60sd30-datasheet
APT44GA60BD30
Виробник: Microchip Technology
Description: IGBT 600V 78A 337W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/84ns
Switching Energy: 409µJ (on), 258µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
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APT46GA90JD40 123670-apt46ga90jd40-datasheet
APT46GA90JD40
Виробник: Microchip Technology
Description: IGBT MODULE 900V 87A 284W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 87 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
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APT47F60J 7058-apt47f60j-datasheet
APT47F60J
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 49A ISOTOP
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APT47GA60JD40 123663-apt47ga60jd40-datasheet
APT47GA60JD40
Виробник: Microchip Technology
Description: IGBT 600V 87A 283W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 87 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
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APT53N60BC6 APT53N60BC6.pdf
APT53N60BC6
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 53A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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APT54GA60B 123655-apt54ga60b-apt54ga60s-datasheet
APT54GA60B
Виробник: Microchip Technology
Description: IGBT 600V 96A 416W TO-247
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APT56F50B2 7147-apt56f50b2-apt56f50l-datasheet
APT56F50B2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 56A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+985.22 грн
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APT56F50L 7147-apt56f50b2-apt56f50l-datasheet
APT56F50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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APT60GA60JD60 123665-apt60ga60jd60-d-datasheet
APT60GA60JD60
Виробник: Microchip Technology
Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
на замовлення 1248 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2175.26 грн
100+1700.33 грн
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APT64GA90B2D30 123651-apt80ga90b-apt80ga90s-datasheet
APT64GA90B2D30
Виробник: Microchip Technology
Description: IGBT PT 900V 117A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/131ns
Switching Energy: 1192µJ (on), 1088µJ (off)
Test Condition: 600V, 38A, 4.7Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 117 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 193 A
Power - Max: 500 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+839.14 грн
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APT66F60B2 7222-apt66f60b2-apt66f60l-datasheet
APT66F60B2
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
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APT66F60L 7222-apt66f60b2-apt66f60l-datasheet
APT66F60L
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT68GA60B 123653-apt68ga60b-apt68ga60s-datasheet
APT68GA60B
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/133ns
Switching Energy: 715µJ (on), 607µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 298 nC
Part Status: Active
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 202 A
Power - Max: 520 W
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+642.26 грн
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APT68GA60B2D40 123666-apt68ga60b2d40-apt68ga60ld40-datasheet
APT68GA60B2D40
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
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APT68GA60LD40 123666-apt68ga60b2d40-apt68ga60ld40-datasheet
APT68GA60LD40
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-264
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APT75F50B2 7244-apt75f50b2-apt75f50l-datasheet
APT75F50B2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT75F50L 7244-apt75f50b2-apt75f50l-datasheet
APT75F50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT77N60BC6 77173-apt77n60bc6-apt77n60sc6-datasheet
APT77N60BC6
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 77A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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APT80F60J 123471-apt80f60j-datasheet
APT80F60J
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 84A ISOTOP
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APT84F50L 7299-apt84f50b2m-apt84f50l-datasheet
APT84F50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 84A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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USB2514B-AEZC 00001692C.pdf
USB2514B-AEZC
Виробник: Microchip Technology
Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 7734 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+165.13 грн
25+132.41 грн
100+128.55 грн
Мінімальне замовлення: 2
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USB2241-AEZG-06 00001979A.pdf
USB2241-AEZG-06
Виробник: Microchip Technology
Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.85 грн
25+159.53 грн
100+144.91 грн
Мінімальне замовлення: 2
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24C00T-E/MNY 24AA00-24LC00-24C00-Data-Sheet-20001178J.pdf
24C00T-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
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24LCS52T-I/MNY 21166K.pdf
24LCS52T-I/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
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25AA040AT-I/MNY 21827H.pdf
25AA040AT-I/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-E/MNY 21827H.pdf
25LC040AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-I/MNY 21827H.pdf
25LC040AT-I/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C46CT-E/MNY 20001749K.pdf
93C46CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93C56AT-E/MNY 21794G.pdf
93C56AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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93C56BT-E/MNY filehandler.aspx?ddocname=en013939
93C56BT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2K SPI 2MHZ 8TDFN
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93C56CT-E/MNY 21794G.pdf
93C56CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
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93C66AT-E/MNY 21795E.pdf
93C66AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C66BT-E/MNY 21795E.pdf
93C66BT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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93C66CT-E/MNY filehandler.aspx?ddocname=en011819
93C66CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT 3MHZ 8TDFN
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93C76CT-E/MNY 21796M.pdf
93C76CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C86CT-E/MNY 21797L.pdf
93C86CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
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93LC46CT-E/MNY 20001749K.pdf
93LC46CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93LC56AT-E/MNY 21794G.pdf
93LC56AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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