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APT47GA60JD40 APT47GA60JD40 Microchip Technology APT47GA60JD40_C.pdf Description: IGBT MODULE 600V 87A 283W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 87 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
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APT53N60BC6 APT53N60BC6 Microchip Technology APT53N60BC6.pdf Description: MOSFET N-CH 600V 53A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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APT54GA60B APT54GA60B Microchip Technology 123655-apt54ga60b-apt54ga60s-datasheet Description: IGBT 600V 96A 416W TO-247
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APT56F50B2 APT56F50B2 Microchip Technology 7147-apt56f50b2-apt56f50l-datasheet Description: MOSFET N-CH 500V 56A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+970.88 грн
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APT56F50L APT56F50L Microchip Technology 7147-apt56f50b2-apt56f50l-datasheet Description: MOSFET N-CH 500V 56A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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APT56F60L Microchip Technology Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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APT60GA60JD60 APT60GA60JD60 Microchip Technology 123665-apt60ga60jd60-d-datasheet Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
1+2007.47 грн
100+1568.94 грн
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APT64GA90B2D30 APT64GA90B2D30 Microchip Technology 123651-apt80ga90b-apt80ga90s-datasheet Description: IGBT PT 900V 117A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/131ns
Switching Energy: 1192µJ (on), 1088µJ (off)
Test Condition: 600V, 38A, 4.7Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 117 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 193 A
Power - Max: 500 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+826.93 грн
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APT66F60B2 APT66F60B2 Microchip Technology 7222-apt66f60b2-apt66f60l-datasheet Description: MOSFET N-CH 600V 70A T-MAX
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APT66F60L APT66F60L Microchip Technology 7222-apt66f60b2-apt66f60l-datasheet Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT68GA60B APT68GA60B Microchip Technology 123653-apt68ga60b-apt68ga60s-datasheet Description: IGBT 600V 121A 520W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/133ns
Switching Energy: 715µJ (on), 607µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 298 nC
Part Status: Active
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 202 A
Power - Max: 520 W
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+632.91 грн
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APT68GA60B2D40 APT68GA60B2D40 Microchip Technology 123666-apt68ga60b2d40-apt68ga60ld40-datasheet Description: IGBT 600V 121A 520W TO-247
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APT68GA60LD40 APT68GA60LD40 Microchip Technology 123666-apt68ga60b2d40-apt68ga60ld40-datasheet Description: IGBT 600V 121A 520W TO-264
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APT75F50B2 Microchip Technology Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT75F50L Microchip Technology Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT77N60BC6 APT77N60BC6 Microchip Technology 77173-apt77n60bc6-apt77n60sc6-datasheet Description: MOSFET N-CH 600V 77A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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APT80F60J APT80F60J Microchip Technology 123471-apt80f60j-datasheet Description: MOSFET N-CH 600V 84A ISOTOP
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APT84F50L APT84F50L Microchip Technology 7299-apt84f50b2m-apt84f50l-datasheet Description: MOSFET N-CH 500V 84A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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USB2514B-AEZC USB2514B-AEZC Microchip Technology 00001692C.pdf Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)
2+157.25 грн
25+126.14 грн
100+122.45 грн
Мінімальне замовлення: 2
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USB2241-AEZG-06 USB2241-AEZG-06 Microchip Technology 00001979A.pdf Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
2+176.02 грн
25+139.97 грн
100+127.14 грн
Мінімальне замовлення: 2
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24C00T-E/MNY 24C00T-E/MNY Microchip Technology 24AA00-24LC00-24C00-Data-Sheet-20001178J.pdf Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
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24LCS52T-I/MNY 24LCS52T-I/MNY Microchip Technology 21166K.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
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25AA040AT-I/MNY 25AA040AT-I/MNY Microchip Technology 21827H.pdf Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-E/MNY 25LC040AT-E/MNY Microchip Technology 21827H.pdf Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-I/MNY 25LC040AT-I/MNY Microchip Technology 21827H.pdf Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C46CT-E/MNY 93C46CT-E/MNY Microchip Technology 20001749K.pdf Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93C56AT-E/MNY 93C56AT-E/MNY Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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93C56BT-E/MNY 93C56BT-E/MNY Microchip Technology filehandler.aspx?ddocname=en013939 Description: IC EEPROM 2K SPI 2MHZ 8TDFN
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93C56CT-E/MNY 93C56CT-E/MNY Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
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93C66AT-E/MNY 93C66AT-E/MNY Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C66BT-E/MNY 93C66BT-E/MNY Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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93C66CT-E/MNY 93C66CT-E/MNY Microchip Technology filehandler.aspx?ddocname=en011819 Description: IC EEPROM 4KBIT 3MHZ 8TDFN
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93C76CT-E/MNY 93C76CT-E/MNY Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C86CT-E/MNY 93C86CT-E/MNY Microchip Technology 21797L.pdf Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
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93LC46CT-E/MNY 93LC46CT-E/MNY Microchip Technology 20001749K.pdf Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93LC56AT-E/MNY 93LC56AT-E/MNY Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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93LC56BT-E/MNY 93LC56BT-E/MNY Microchip Technology 21794G.pdf Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+31.11 грн
Мінімальне замовлення: 3300
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93LC66AT-E/MNY 93LC66AT-E/MNY Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN
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93LC66BT-E/MNY 93LC66BT-E/MNY Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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93LC66CT-E/MNY 93LC66CT-E/MNY Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
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93LC76CT-E/MNY 93LC76CT-E/MNY Microchip Technology 21796M.pdf Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93LC86CT-E/MNY 93LC86CT-E/MNY Microchip Technology 21797L.pdf Description: IC EEPROM 16KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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AC164347 Microchip Technology Description: SOCKET MODULE PM3 UNIV 144LQFP
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AC164351 AC164351 Microchip Technology Description: SOCKET MODULE MPLAB PM3 121BGA
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AC164355 AC164355 Microchip Technology AC164355_Web.pdf Description: SOCKET MODULE PM3 36VLAP 5X5
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BK0011 Microchip Technology Description: LITERATURE MPLAB PROGRAMMING
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DSPIC33FJ16GS402T-50I/MM DSPIC33FJ16GS402T-50I/MM Microchip Technology filehandler.aspx?ddocname=en540501 Description: IC MCU 16BIT 16KB FLASH 28QFN
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DSPIC33FJ16GS402T-50I/SO DSPIC33FJ16GS402T-50I/SO Microchip Technology filehandler.aspx?ddocname=en540501 Description: IC MCU 16BIT 16KB FLASH 28SOIC
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DSPIC33FJ16GS404T-50I/ML DSPIC33FJ16GS404T-50I/ML Microchip Technology filehandler.aspx?ddocname=en540501 Description: IC MCU 16BIT 16KB FLASH 44QFN
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DSPIC33FJ16GS404T-50I/TL DSPIC33FJ16GS404T-50I/TL Microchip Technology filehandler.aspx?ddocname=en540501 Description: IC MCU 16BIT 16KB FLASH 44VTLA
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DSPIC33FJ16GS502T-50I/MM DSPIC33FJ16GS502T-50I/MM Microchip Technology 70000318g.pdf Description: IC MCU 16BIT 16KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50 MIPs
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 16x10b; D/A 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN-S (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33FJ16GS502T-50I/SO DSPIC33FJ16GS502T-50I/SO Microchip Technology 70000318g.pdf Description: IC MCU 16BIT 16KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 50 MIPs
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 16x10b; D/A 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33FJ16GS504T-50I/ML DSPIC33FJ16GS504T-50I/ML Microchip Technology 70000318g.pdf Description: IC MCU 16BIT 16KB FLASH 44QFN
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DSPIC33FJ16GS504T-50I/TL DSPIC33FJ16GS504T-50I/TL Microchip Technology 70000318g.pdf Description: IC MCU 16BIT 16KB FLASH 44VTLA
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DSPIC33FJ32GS406T-50I/MR DSPIC33FJ32GS406T-50I/MR Microchip Technology filehandler.aspx?ddocname=en547103 Description: IC MCU 16BIT 32KB FLASH 64QFN
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DSPIC33FJ32GS406T-50I/PT DSPIC33FJ32GS406T-50I/PT Microchip Technology filehandler.aspx?ddocname=en547103 Description: IC MCU 16BIT 32KB FLASH 64TQFP
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DSPIC33FJ32GS606T-50I/MR DSPIC33FJ32GS606T-50I/MR Microchip Technology filehandler.aspx?ddocname=en547103 Description: IC MCU 16BIT 32KB FLASH 64QFN
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DSPIC33FJ32GS608T-50I/PT DSPIC33FJ32GS608T-50I/PT Microchip Technology filehandler.aspx?ddocname=en547103 Description: IC MCU 16BIT 32KB FLASH 80TQFP
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DSPIC33FJ64GS406T-50I/PT DSPIC33FJ64GS406T-50I/PT Microchip Technology filehandler.aspx?ddocname=en547103 Description: IC MCU 16BIT 64KB FLASH 64TQFP
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DSPIC33FJ64GS606T-50I/MR DSPIC33FJ64GS606T-50I/MR Microchip Technology 70000591f.pdf Description: IC MCU 16BIT 64KB FLASH 64VQFN
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APT47GA60JD40 APT47GA60JD40_C.pdf
APT47GA60JD40
Виробник: Microchip Technology
Description: IGBT MODULE 600V 87A 283W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 87 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
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APT53N60BC6 APT53N60BC6.pdf
APT53N60BC6
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 53A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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APT54GA60B 123655-apt54ga60b-apt54ga60s-datasheet
APT54GA60B
Виробник: Microchip Technology
Description: IGBT 600V 96A 416W TO-247
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APT56F50B2 7147-apt56f50b2-apt56f50l-datasheet
APT56F50B2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 56A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+970.88 грн
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APT56F50L 7147-apt56f50b2-apt56f50l-datasheet
APT56F50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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APT56F60L
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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APT60GA60JD60 123665-apt60ga60jd60-d-datasheet
APT60GA60JD60
Виробник: Microchip Technology
Description: IGBT MOD 600V 112A 356W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 356 W
Current - Collector Cutoff (Max): 275 µA
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2007.47 грн
100+1568.94 грн
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APT64GA90B2D30 123651-apt80ga90b-apt80ga90s-datasheet
APT64GA90B2D30
Виробник: Microchip Technology
Description: IGBT PT 900V 117A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/131ns
Switching Energy: 1192µJ (on), 1088µJ (off)
Test Condition: 600V, 38A, 4.7Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 117 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 193 A
Power - Max: 500 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+826.93 грн
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APT66F60B2 7222-apt66f60b2-apt66f60l-datasheet
APT66F60B2
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
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APT66F60L 7222-apt66f60b2-apt66f60l-datasheet
APT66F60L
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
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APT68GA60B 123653-apt68ga60b-apt68ga60s-datasheet
APT68GA60B
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/133ns
Switching Energy: 715µJ (on), 607µJ (off)
Test Condition: 400V, 40A, 4.7Ohm, 15V
Gate Charge: 298 nC
Part Status: Active
Current - Collector (Ic) (Max): 121 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 202 A
Power - Max: 520 W
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.91 грн
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APT68GA60B2D40 123666-apt68ga60b2d40-apt68ga60ld40-datasheet
APT68GA60B2D40
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
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APT68GA60LD40 123666-apt68ga60b2d40-apt68ga60ld40-datasheet
APT68GA60LD40
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-264
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APT75F50B2
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT75F50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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APT77N60BC6 77173-apt77n60bc6-apt77n60sc6-datasheet
APT77N60BC6
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 77A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
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APT80F60J 123471-apt80f60j-datasheet
APT80F60J
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 84A ISOTOP
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APT84F50L 7299-apt84f50b2m-apt84f50l-datasheet
APT84F50L
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 84A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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USB2514B-AEZC 00001692C.pdf
USB2514B-AEZC
Виробник: Microchip Technology
Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+157.25 грн
25+126.14 грн
100+122.45 грн
Мінімальне замовлення: 2
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USB2241-AEZG-06 00001979A.pdf
USB2241-AEZG-06
Виробник: Microchip Technology
Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+176.02 грн
25+139.97 грн
100+127.14 грн
Мінімальне замовлення: 2
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24C00T-E/MNY 24AA00-24LC00-24C00-Data-Sheet-20001178J.pdf
24C00T-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
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24LCS52T-I/MNY 21166K.pdf
24LCS52T-I/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
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25AA040AT-I/MNY 21827H.pdf
25AA040AT-I/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-E/MNY 21827H.pdf
25LC040AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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25LC040AT-I/MNY 21827H.pdf
25LC040AT-I/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C46CT-E/MNY 20001749K.pdf
93C46CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93C56AT-E/MNY 21794G.pdf
93C56AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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93C56BT-E/MNY filehandler.aspx?ddocname=en013939
93C56BT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2K SPI 2MHZ 8TDFN
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93C56CT-E/MNY 21794G.pdf
93C56CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
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93C66AT-E/MNY 21795E.pdf
93C66AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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93C66BT-E/MNY 21795E.pdf
93C66BT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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93C66CT-E/MNY filehandler.aspx?ddocname=en011819
93C66CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT 3MHZ 8TDFN
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93C76CT-E/MNY 21796M.pdf
93C76CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93C86CT-E/MNY 21797L.pdf
93C86CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
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93LC46CT-E/MNY 20001749K.pdf
93LC46CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
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93LC56AT-E/MNY 21794G.pdf
93LC56AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
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93LC56BT-E/MNY 21794G.pdf
93LC56BT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+31.11 грн
Мінімальне замовлення: 3300
В кошику  од. на суму  грн.
93LC66AT-E/MNY 21795E.pdf
93LC66AT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN
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93LC66BT-E/MNY 21795E.pdf
93LC66BT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
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93LC66CT-E/MNY 21795E.pdf
93LC66CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
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93LC76CT-E/MNY 21796M.pdf
93LC76CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
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93LC86CT-E/MNY 21797L.pdf
93LC86CT-E/MNY
Виробник: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
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AC164347
Виробник: Microchip Technology
Description: SOCKET MODULE PM3 UNIV 144LQFP
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AC164351
AC164351
Виробник: Microchip Technology
Description: SOCKET MODULE MPLAB PM3 121BGA
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AC164355 AC164355_Web.pdf
AC164355
Виробник: Microchip Technology
Description: SOCKET MODULE PM3 36VLAP 5X5
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BK0011
Виробник: Microchip Technology
Description: LITERATURE MPLAB PROGRAMMING
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DSPIC33FJ16GS402T-50I/MM filehandler.aspx?ddocname=en540501
DSPIC33FJ16GS402T-50I/MM
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 28QFN
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DSPIC33FJ16GS402T-50I/SO filehandler.aspx?ddocname=en540501
DSPIC33FJ16GS402T-50I/SO
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 28SOIC
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DSPIC33FJ16GS404T-50I/ML filehandler.aspx?ddocname=en540501
DSPIC33FJ16GS404T-50I/ML
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 44QFN
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DSPIC33FJ16GS404T-50I/TL filehandler.aspx?ddocname=en540501
DSPIC33FJ16GS404T-50I/TL
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 44VTLA
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DSPIC33FJ16GS502T-50I/MM 70000318g.pdf
DSPIC33FJ16GS502T-50I/MM
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 28QFN
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50 MIPs
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 16x10b; D/A 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-QFN-S (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33FJ16GS502T-50I/SO 70000318g.pdf
DSPIC33FJ16GS502T-50I/SO
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 50 MIPs
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 16x10b; D/A 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
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DSPIC33FJ16GS504T-50I/ML 70000318g.pdf
DSPIC33FJ16GS504T-50I/ML
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 44QFN
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DSPIC33FJ16GS504T-50I/TL 70000318g.pdf
DSPIC33FJ16GS504T-50I/TL
Виробник: Microchip Technology
Description: IC MCU 16BIT 16KB FLASH 44VTLA
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DSPIC33FJ32GS406T-50I/MR filehandler.aspx?ddocname=en547103
DSPIC33FJ32GS406T-50I/MR
Виробник: Microchip Technology
Description: IC MCU 16BIT 32KB FLASH 64QFN
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DSPIC33FJ32GS406T-50I/PT filehandler.aspx?ddocname=en547103
DSPIC33FJ32GS406T-50I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 32KB FLASH 64TQFP
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DSPIC33FJ32GS606T-50I/MR filehandler.aspx?ddocname=en547103
DSPIC33FJ32GS606T-50I/MR
Виробник: Microchip Technology
Description: IC MCU 16BIT 32KB FLASH 64QFN
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DSPIC33FJ32GS608T-50I/PT filehandler.aspx?ddocname=en547103
DSPIC33FJ32GS608T-50I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 32KB FLASH 80TQFP
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DSPIC33FJ64GS406T-50I/PT filehandler.aspx?ddocname=en547103
DSPIC33FJ64GS406T-50I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 64TQFP
товару немає в наявності
В кошику  од. на суму  грн.
DSPIC33FJ64GS606T-50I/MR 70000591f.pdf
DSPIC33FJ64GS606T-50I/MR
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 64VQFN
товару немає в наявності
В кошику  од. на суму  грн.
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