Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (277104) > Сторінка 648 з 4619
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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APT15D120BG | Microchip Technology |
Description: DIODE GEN PURP 1.2KV 15A TO247 |
товару немає в наявності |
Мінімальне замовлення: 210 шт В кошику од. на суму грн. | ||||||
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APT30F60J | Microchip Technology |
Description: MOSFET N-CH 600V 31A ISOTOPInput Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOTOP® Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 355W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||
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APT30GS60BRDQ2G | Microchip Technology |
Description: IGBT 600V 54A 250W SOT227Power - Max: 250 W Current - Collector Pulsed (Icm): 113 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 54 A Gate Charge: 145 nC Test Condition: 400V, 30A, 9.1Ohm, 15V Switching Energy: 570µJ (off) Td (on/off) @ 25°C: 16ns/360ns IGBT Type: NPT Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A Reverse Recovery Time (trr): 25 ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT30N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 30A TO247Package / Case: TO-247-3 Packaging: Tube Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 960µA Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||
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APT35GA90B | Microchip Technology |
Description: IGBT 900V 63A 290W TO-247Power - Max: 290 W Current - Collector Pulsed (Icm): 105 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 63 A Part Status: Active Gate Charge: 84 nC Test Condition: 600V, 18A, 10Ohm, 15V Switching Energy: 642µJ (on), 382µJ (off) Td (on/off) @ 25°C: 12ns/104ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 110 шт В кошику од. на суму грн. | ||||||
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APT36GA60B | Microchip Technology |
Description: IGBT PT 600V 65A TO247Power - Max: 290 W Current - Collector Pulsed (Icm): 109 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 65 A Gate Charge: 102 nC Test Condition: 400V, 20A, 10Ohm, 15V Switching Energy: 307µJ (on), 254µJ (off) Td (on/off) @ 25°C: 16ns/122ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT36GA60BD15 | Microchip Technology |
Description: IGBT 600V 65A 290W TO-247 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT38N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 38A TO247Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||
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APT43F60L | Microchip Technology |
Description: MOSFET N-CH 600V 45A TO264 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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APT43GA90B | Microchip Technology |
Description: IGBT PT 900V 78A TO247Power - Max: 337 W Current - Collector Pulsed (Icm): 129 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 78 A Part Status: Active Gate Charge: 116 nC Test Condition: 600V, 25A, 4.7Ohm, 15V Switching Energy: 875µJ (on), 425µJ (off) Td (on/off) @ 25°C: 12ns/82ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 81 шт: термін постачання 21-31 дні (днів) |
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APT44GA60B | Microchip Technology |
Description: IGBT 600V 78A 337W TO-247Power - Max: 337 W Current - Collector Pulsed (Icm): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 78 A Gate Charge: 128 nC Test Condition: 400V, 26A, 4.7Ohm, 15V Switching Energy: 409µJ (on), 258µJ (off) Td (on/off) @ 25°C: 16ns/84ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 70 шт В кошику од. на суму грн. | ||||||
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APT44GA60BD30 | Microchip Technology |
Description: IGBT 600V 78A 337W TO-247Power - Max: 337 W Current - Collector Pulsed (Icm): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 78 A Gate Charge: 128 nC Test Condition: 400V, 26A, 4.7Ohm, 15V Switching Energy: 409µJ (on), 258µJ (off) Td (on/off) @ 25°C: 16ns/84ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. | ||||||
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APT46GA90JD40 | Microchip Technology |
Description: IGBT MODULE 900V 87A 284W ISOTOPVoltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 87 A Part Status: Active IGBT Type: PT Supplier Device Package: ISOTOP® NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V Current - Collector Cutoff (Max): 350 µA Power - Max: 284 W |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||
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APT47F60J | Microchip Technology |
Description: MOSFET N-CH 600V 49A ISOTOP |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||
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APT47GA60JD40 | Microchip Technology |
Description: IGBT MODULE 600V 87A 283W ISOTOPInput Capacitance (Cies) @ Vce: 6.32 nF @ 25 V Current - Collector Cutoff (Max): 275 µA Power - Max: 283 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 87 A Part Status: Active IGBT Type: PT Supplier Device Package: ISOTOP® NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||
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APT53N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 53A TO247Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 1.72mA Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 70 шт В кошику од. на суму грн. | ||||||
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APT54GA60B | Microchip Technology |
Description: IGBT 600V 96A 416W TO-247 |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||
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APT56F50B2 | Microchip Technology |
Description: MOSFET N-CH 500V 56A T-MAXInput Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: T-MAX™ [B2] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
на замовлення 41 шт: термін постачання 21-31 дні (днів) |
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APT56F50L | Microchip Technology |
Description: MOSFET N-CH 500V 56A TO264Package / Case: TO-264-3, TO-264AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
| APT56F60L | Microchip Technology |
Description: MOSFET N-CH 600V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 (L) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | |||||||
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APT60GA60JD60 | Microchip Technology |
Description: IGBT MOD 600V 112A 356W ISOTOPCurrent - Collector Cutoff (Max): 275 µA Power - Max: 356 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 112 A IGBT Type: PT Supplier Device Package: ISOTOP® NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V |
на замовлення 1233 шт: термін постачання 21-31 дні (днів) |
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APT64GA90B2D30 | Microchip Technology |
Description: IGBT PT 900V 117A TO247Power - Max: 500 W Current - Collector Pulsed (Icm): 193 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector (Ic) (Max): 117 A Part Status: Active Gate Charge: 162 nC Test Condition: 600V, 38A, 4.7Ohm, 15V Switching Energy: 1192µJ (on), 1088µJ (off) Td (on/off) @ 25°C: 18ns/131ns IGBT Type: PT Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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APT66F60B2 | Microchip Technology |
Description: MOSFET N-CH 600V 70A T-MAX |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||
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APT66F60L | Microchip Technology |
Description: MOSFET N-CH 600V 70A TO264Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||
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APT68GA60B | Microchip Technology |
Description: IGBT 600V 121A 520W TO-247Power - Max: 520 W Current - Collector Pulsed (Icm): 202 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 121 A Part Status: Active Gate Charge: 298 nC Test Condition: 400V, 40A, 4.7Ohm, 15V Switching Energy: 715µJ (on), 607µJ (off) Td (on/off) @ 25°C: 21ns/133ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Type: Standard |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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APT68GA60B2D40 | Microchip Technology |
Description: IGBT 600V 121A 520W TO-247 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
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APT68GA60LD40 | Microchip Technology |
Description: IGBT 600V 121A 520W TO-264 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||
| APT75F50B2 | Microchip Technology |
Description: MOSFET N-CH 500V 75A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | |||||||
| APT75F50L | Microchip Technology |
Description: MOSFET N-CH 500V 75A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 (L) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | |||||||
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APT77N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 77A TO247Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.6V @ 2.96mA Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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APT80F60J | Microchip Technology |
Description: MOSFET N-CH 600V 84A ISOTOP |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||
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APT84F50L | Microchip Technology |
Description: MOSFET N-CH 500V 84A TO264Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 [L] Vgs(th) (Max) @ Id: 5V @ 2.5mA Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||
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USB2514B-AEZC | Microchip Technology |
Description: IC USB 2.0 4PORT HUB CTLR 36QFNPackaging: Tray Package / Case: 36-VFQFN Exposed Pad Function: Hub Controller Interface: USB Operating Temperature: 0°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Current - Supply: 70mA Protocol: USB Supplier Device Package: 36-QFN (6x6) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 11724 шт: термін постачання 21-31 дні (днів) |
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USB2241-AEZG-06 | Microchip Technology |
Description: IC CONTROLLER USB 36QFNPackaging: Tray Package / Case: 36-VFQFN Exposed Pad Function: Controller Interface: Serial Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Current - Supply: 135mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 36-QFN (6x6) DigiKey Programmable: Not Verified |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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24C00T-E/MNY | Microchip Technology |
Description: IC EEPROM 128BIT I2C 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128bit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 100 kHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 4ms Memory Interface: I2C Access Time: 3.5 µs Memory Organization: 16 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
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24LCS52T-I/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
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25AA040AT-I/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFNTechnology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-TDFN (2x3) Memory Format: EEPROM Clock Frequency: 10 MHz |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
25LC040AT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFNDigiKey Programmable: Not Verified Memory Organization: 512 x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-TDFN (2x3) Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 4Kbit Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
25LC040AT-I/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C46CT-E/MNY | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C56AT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C56BT-E/MNY | Microchip Technology |
Description: IC EEPROM 2K SPI 2MHZ 8TDFN |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C56CT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C66AT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C66BT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C66CT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT 3MHZ 8TDFN |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C76CT-E/MNY | Microchip Technology |
Description: IC EEPROM 8KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 2ms Memory Interface: Microwire Memory Organization: 1K x 8, 512 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93C86CT-E/MNY | Microchip Technology |
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93LC46CT-E/MNY | Microchip Technology |
Description: IC EEPROM 1KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 8, 64 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93LC56AT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93LC56BT-E/MNY | Microchip Technology |
Description: IC EEPROM 2KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 128 x 16 DigiKey Programmable: Not Verified |
на замовлення 3300 шт: термін постачання 21-31 дні (днів) |
|
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|
93LC66AT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93LC66BT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 256 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93LC66CT-E/MNY | Microchip Technology |
Description: IC EEPROM 4KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 6ms Memory Interface: Microwire Memory Organization: 512 x 8, 256 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93LC76CT-E/MNY | Microchip Technology |
Description: IC EEPROM 8KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 1K x 8, 512 x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
|
93LC86CT-E/MNY | Microchip Technology |
Description: IC EEPROM 16KBIT MICROWIRE 8TDFNPackaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 3 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Microwire Memory Organization: 2K x 8, 1K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3300 шт В кошику од. на суму грн. | ||||||
| AC164347 | Microchip Technology | Description: SOCKET MODULE PM3 UNIV 144LQFP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
|
AC164351 | Microchip Technology | Description: SOCKET MODULE MPLAB PM3 121BGA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
|
AC164355 | Microchip Technology |
Description: SOCKET MODULE PM3 36VLAP 5X5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| BK0011 | Microchip Technology | Description: LITERATURE MPLAB PROGRAMMING |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| APT15D120BG |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 1.2KV 15A TO247
Description: DIODE GEN PURP 1.2KV 15A TO247
товару немає в наявності
Мінімальне замовлення: 210 шт
В кошику
од. на суму грн.
| APT30F60J |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 355W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: MOSFET N-CH 600V 31A ISOTOP
Input Capacitance (Ciss) (Max) @ Vds: 8590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOTOP®
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 355W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| APT30GS60BRDQ2G |
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Виробник: Microchip Technology
Description: IGBT 600V 54A 250W SOT227
Power - Max: 250 W
Current - Collector Pulsed (Icm): 113 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 54 A
Gate Charge: 145 nC
Test Condition: 400V, 30A, 9.1Ohm, 15V
Switching Energy: 570µJ (off)
Td (on/off) @ 25°C: 16ns/360ns
IGBT Type: NPT
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Reverse Recovery Time (trr): 25 ns
Description: IGBT 600V 54A 250W SOT227
Power - Max: 250 W
Current - Collector Pulsed (Icm): 113 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 54 A
Gate Charge: 145 nC
Test Condition: 400V, 30A, 9.1Ohm, 15V
Switching Energy: 570µJ (off)
Td (on/off) @ 25°C: 16ns/360ns
IGBT Type: NPT
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
Reverse Recovery Time (trr): 25 ns
товару немає в наявності
В кошику
од. на суму грн.
| APT30N60BC6 |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 30A TO247
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 30A TO247
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| APT35GA90B |
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Виробник: Microchip Technology
Description: IGBT 900V 63A 290W TO-247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 63 A
Part Status: Active
Gate Charge: 84 nC
Test Condition: 600V, 18A, 10Ohm, 15V
Switching Energy: 642µJ (on), 382µJ (off)
Td (on/off) @ 25°C: 12ns/104ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 900V 63A 290W TO-247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 63 A
Part Status: Active
Gate Charge: 84 nC
Test Condition: 600V, 18A, 10Ohm, 15V
Switching Energy: 642µJ (on), 382µJ (off)
Td (on/off) @ 25°C: 12ns/104ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 18A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 110 шт
В кошику
од. на суму грн.
| APT36GA60B |
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Виробник: Microchip Technology
Description: IGBT PT 600V 65A TO247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 109 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 102 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 307µJ (on), 254µJ (off)
Td (on/off) @ 25°C: 16ns/122ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 600V 65A TO247
Power - Max: 290 W
Current - Collector Pulsed (Icm): 109 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
Gate Charge: 102 nC
Test Condition: 400V, 20A, 10Ohm, 15V
Switching Energy: 307µJ (on), 254µJ (off)
Td (on/off) @ 25°C: 16ns/122ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| APT36GA60BD15 |
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Виробник: Microchip Technology
Description: IGBT 600V 65A 290W TO-247
Description: IGBT 600V 65A 290W TO-247
товару немає в наявності
В кошику
од. на суму грн.
| APT38N60BC6 |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 90 шт
В кошику
од. на суму грн.
| APT43F60L |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 45A TO264
Description: MOSFET N-CH 600V 45A TO264
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| APT43GA90B |
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Виробник: Microchip Technology
Description: IGBT PT 900V 78A TO247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 129 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 78 A
Part Status: Active
Gate Charge: 116 nC
Test Condition: 600V, 25A, 4.7Ohm, 15V
Switching Energy: 875µJ (on), 425µJ (off)
Td (on/off) @ 25°C: 12ns/82ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 900V 78A TO247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 129 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 78 A
Part Status: Active
Gate Charge: 116 nC
Test Condition: 600V, 25A, 4.7Ohm, 15V
Switching Energy: 875µJ (on), 425µJ (off)
Td (on/off) @ 25°C: 12ns/82ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 455.88 грн |
| APT44GA60B |
![]() |
Виробник: Microchip Technology
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 70 шт
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| APT44GA60BD30 |
![]() |
Виробник: Microchip Technology
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 600V 78A 337W TO-247
Power - Max: 337 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 78 A
Gate Charge: 128 nC
Test Condition: 400V, 26A, 4.7Ohm, 15V
Switching Energy: 409µJ (on), 258µJ (off)
Td (on/off) @ 25°C: 16ns/84ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 80 шт
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| APT46GA90JD40 |
![]() |
Виробник: Microchip Technology
Description: IGBT MODULE 900V 87A 284W ISOTOP
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Description: IGBT MODULE 900V 87A 284W ISOTOP
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 4.17 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
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Мінімальне замовлення: 20 шт
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| APT47F60J |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 49A ISOTOP
Description: MOSFET N-CH 600V 49A ISOTOP
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Мінімальне замовлення: 20 шт
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| APT47GA60JD40 |
![]() |
Виробник: Microchip Technology
Description: IGBT MODULE 600V 87A 283W ISOTOP
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
Current - Collector Cutoff (Max): 275 µA
Power - Max: 283 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Description: IGBT MODULE 600V 87A 283W ISOTOP
Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V
Current - Collector Cutoff (Max): 275 µA
Power - Max: 283 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 87 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Мінімальне замовлення: 20 шт
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| APT53N60BC6 |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 53A TO247
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 600V 53A TO247
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 1.72mA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 25.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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Мінімальне замовлення: 70 шт
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| APT54GA60B |
![]() |
Виробник: Microchip Technology
Description: IGBT 600V 96A 416W TO-247
Description: IGBT 600V 96A 416W TO-247
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Мінімальне замовлення: 90 шт
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| APT56F50B2 |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 56A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: MOSFET N-CH 500V 56A T-MAX
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 963.80 грн |
| APT56F50L |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 500V 56A TO264
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Мінімальне замовлення: 50 шт
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| APT56F60L |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
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Мінімальне замовлення: 40 шт
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| APT60GA60JD60 |
![]() |
Виробник: Microchip Technology
Description: IGBT MOD 600V 112A 356W ISOTOP
Current - Collector Cutoff (Max): 275 µA
Power - Max: 356 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 112 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
Description: IGBT MOD 600V 112A 356W ISOTOP
Current - Collector Cutoff (Max): 275 µA
Power - Max: 356 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 112 A
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Cies) @ Vce: 8.01 nF @ 25 V
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1992.84 грн |
| 100+ | 1557.51 грн |
| APT64GA90B2D30 |
![]() |
Виробник: Microchip Technology
Description: IGBT PT 900V 117A TO247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 193 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 117 A
Part Status: Active
Gate Charge: 162 nC
Test Condition: 600V, 38A, 4.7Ohm, 15V
Switching Energy: 1192µJ (on), 1088µJ (off)
Td (on/off) @ 25°C: 18ns/131ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Description: IGBT PT 900V 117A TO247
Power - Max: 500 W
Current - Collector Pulsed (Icm): 193 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 117 A
Part Status: Active
Gate Charge: 162 nC
Test Condition: 600V, 38A, 4.7Ohm, 15V
Switching Energy: 1192µJ (on), 1088µJ (off)
Td (on/off) @ 25°C: 18ns/131ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 820.90 грн |
| APT66F60B2 |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A T-MAX
Description: MOSFET N-CH 600V 70A T-MAX
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Мінімальне замовлення: 40 шт
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| APT66F60L |
![]() |
Виробник: Microchip Technology
Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 600V 70A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 25 шт
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| APT68GA60B |
![]() |
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
Power - Max: 520 W
Current - Collector Pulsed (Icm): 202 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 121 A
Part Status: Active
Gate Charge: 298 nC
Test Condition: 400V, 40A, 4.7Ohm, 15V
Switching Energy: 715µJ (on), 607µJ (off)
Td (on/off) @ 25°C: 21ns/133ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Type: Standard
Description: IGBT 600V 121A 520W TO-247
Power - Max: 520 W
Current - Collector Pulsed (Icm): 202 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 121 A
Part Status: Active
Gate Charge: 298 nC
Test Condition: 400V, 40A, 4.7Ohm, 15V
Switching Energy: 715µJ (on), 607µJ (off)
Td (on/off) @ 25°C: 21ns/133ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Type: Standard
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 628.30 грн |
| APT68GA60B2D40 |
![]() |
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-247
Description: IGBT 600V 121A 520W TO-247
товару немає в наявності
Мінімальне замовлення: 50 шт
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| APT68GA60LD40 |
![]() |
Виробник: Microchip Technology
Description: IGBT 600V 121A 520W TO-264
Description: IGBT 600V 121A 520W TO-264
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
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| APT75F50B2 |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Description: MOSFET N-CH 500V 75A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 40 шт
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| APT75F50L |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Description: MOSFET N-CH 500V 75A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 37A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
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| APT77N60BC6 |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 77A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 77A TO247
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.6V @ 2.96mA
Power Dissipation (Max): 481W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 44.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| APT80F60J |
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Виробник: Microchip Technology
Description: MOSFET N-CH 600V 84A ISOTOP
Description: MOSFET N-CH 600V 84A ISOTOP
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Мінімальне замовлення: 10 шт
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| APT84F50L |
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Виробник: Microchip Technology
Description: MOSFET N-CH 500V 84A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Description: MOSFET N-CH 500V 84A TO264
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 [L]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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Мінімальне замовлення: 40 шт
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| USB2514B-AEZC |
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Виробник: Microchip Technology
Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC USB 2.0 4PORT HUB CTLR 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 70mA
Protocol: USB
Supplier Device Package: 36-QFN (6x6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 11724 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.66 грн |
| 25+ | 126.21 грн |
| 100+ | 122.53 грн |
| USB2241-AEZG-06 |
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Виробник: Microchip Technology
Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
Description: IC CONTROLLER USB 36QFN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Function: Controller
Interface: Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 135mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 36-QFN (6x6)
DigiKey Programmable: Not Verified
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.74 грн |
| 25+ | 138.95 грн |
| 100+ | 126.21 грн |
| 24C00T-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128BIT I2C 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128bit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 3.5 µs
Memory Organization: 16 x 8
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 3300 шт
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| 24LCS52T-I/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
Description: IC EEPROM 2KBIT I2C 400KHZ 8TDFN
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Мінімальне замовлення: 3300 шт
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| 25AA040AT-I/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
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Мінімальне замовлення: 3300 шт
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| 25LC040AT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-TDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3300 шт
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| 25LC040AT-I/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT SPI 10MHZ 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
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| 93C46CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
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| 93C56AT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
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| 93C56BT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 2K SPI 2MHZ 8TDFN
Description: IC EEPROM 2K SPI 2MHZ 8TDFN
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Мінімальне замовлення: 3300 шт
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| 93C56CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
Description: IC EEPROM 2KBIT SPI 3MHZ 8TDFN
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Мінімальне замовлення: 3300 шт
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| 93C66AT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
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| 93C66BT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
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од. на суму грн.
| 93C66CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT 3MHZ 8TDFN
Description: IC EEPROM 4KBIT 3MHZ 8TDFN
товару немає в наявності
Мінімальне замовлення: 3300 шт
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од. на суму грн.
| 93C76CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 2ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
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| 93C86CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
товару немає в наявності
Мінімальне замовлення: 3300 шт
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| 93LC46CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 1KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 8, 64 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
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од. на суму грн.
| 93LC56AT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| 93LC56BT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 128 x 16
DigiKey Programmable: Not Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3300+ | 30.88 грн |
| 93LC66AT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN
Description: IC EEPROM 4KBIT SPI 2MHZ 8TDFN
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| 93LC66BT-E/MNY |
![]() |
Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| 93LC66CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8, 256 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| 93LC76CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 8KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 1K x 8, 512 x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| 93LC86CT-E/MNY |
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Виробник: Microchip Technology
Description: IC EEPROM 16KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 3 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Microwire
Memory Organization: 2K x 8, 1K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3300 шт
В кошику
од. на суму грн.
| AC164347 |
Виробник: Microchip Technology
Description: SOCKET MODULE PM3 UNIV 144LQFP
Description: SOCKET MODULE PM3 UNIV 144LQFP
товару немає в наявності
В кошику
од. на суму грн.
| AC164351 |
Виробник: Microchip Technology
Description: SOCKET MODULE MPLAB PM3 121BGA
Description: SOCKET MODULE MPLAB PM3 121BGA
товару немає в наявності
В кошику
од. на суму грн.
| AC164355 |
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Виробник: Microchip Technology
Description: SOCKET MODULE PM3 36VLAP 5X5
Description: SOCKET MODULE PM3 36VLAP 5X5
товару немає в наявності
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од. на суму грн.
| BK0011 |
Виробник: Microchip Technology
Description: LITERATURE MPLAB PROGRAMMING
Description: LITERATURE MPLAB PROGRAMMING
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
















