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1N5754B 1N5754B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 56V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
товар відсутній
1N5755B 1N5755B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 62V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
1N5756B 1N5756B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 68V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 48 V
товар відсутній
1N5757B 1N5757B Microchip Technology 10921-sa5-55-datasheet Description: DIODE ZENER 75V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
товар відсутній
1N5802US 1N5802US Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 50V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
1+594.89 грн
100+ 531.62 грн
1N5804US 1N5804US Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 302 шт:
термін постачання 21-31 дні (днів)
1+614.24 грн
100+ 549.38 грн
1N5806US 1N5806US Microchip Technology 132687-lds-0211-1-datasheet Description: DIODE GEN PURP 150V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 75690 шт:
термін постачання 21-31 дні (днів)
1+387.04 грн
100+ 346.07 грн
1N5809US 1N5809US Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
1+531.82 грн
100+ 475.44 грн
1N5811US 1N5811US Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
1+455.84 грн
100+ 407.89 грн
1N5819-1 1N5819-1 Microchip Technology 131894-lds-0301-datasheet Description: DIODE SCHOTTKY 45V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товар відсутній
1N5820US 1N5820US Microchip Technology 131998-lds-0303-1-datasheet Description: DIODE SCHOTTKY 20V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
товар відсутній
1N5821US 1N5821US Microchip Technology 131998-lds-0303-1-datasheet Description: DIODE SCHOTTKY 30V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товар відсутній
1N5913BUR-1 1N5913BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 3.3V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
1N5914BUR-1 1N5914BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 3.6V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
товар відсутній
1N5916BUR-1 1N5916BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 4.3V 1.25W DO213AB
товар відсутній
1N5917BUR-1 1N5917BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 4.7V 1.25W DO213AB
товар відсутній
1N5918BUR-1 1N5918BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 5.1V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товар відсутній
1N5919BUR-1 1N5919BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 5.6V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
товар відсутній
1N5922BUR-1 1N5922BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 7.5V 1.25W DO213AB
товар відсутній
1N5923BUR-1 1N5923BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 8.2V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 6.5 V
товар відсутній
1N5927BUR-1 1N5927BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 12V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
товар відсутній
1N5929BUR-1 1N5929BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 15V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
товар відсутній
1N5930BUR-1 1N5930BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 16V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
товар відсутній
1N5931BUR-1 1N5931BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 18V 1.25W DO213AB
товар відсутній
1N5932BUR-1 1N5932BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 20V 1.25W DO213AB
товар відсутній
1N5934BUR-1 1N5934BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 24V 1.25W DO213AB
товар відсутній
1N5938BUR-1 1N5938BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 36V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
2+225.05 грн
100+ 201.39 грн
Мінімальне замовлення: 2
1N5941BUR-1 1N5941BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 47V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 67 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 35.8 V
товар відсутній
1N5942BUR-1 1N5942BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 51V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
товар відсутній
1N5948BUR-1 1N5948BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 91V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 69.2 V
товар відсутній
1N5949BUR-1 1N5949BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 100V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
товар відсутній
1N5953BUR-1 1N5953BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 150V 1.25W DO213AB
товар відсутній
1N5955BUR-1 1N5955BUR-1 Microchip Technology 10865-sa3-35-datasheet Description: DIODE ZENER 180V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V
товар відсутній
1N5969 1N5969 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 6.2V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
1+1512.31 грн
1N5995C 1N5995C Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 6.2V 500MW DO35
товар відсутній
1N5995D 1N5995D Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
товар відсутній
1N5997A 1N5997A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 7.5V 500MW DO35
товар відсутній
1N6000A 1N6000A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 10V 500MW DO35
товар відсутній
1N6000C 1N6000C Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 10V 500MW DO35
товар відсутній
1N6000D 1N6000D Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 10V 500MW DO35
товар відсутній
1N6003D 1N6003D Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.9 V
товар відсутній
1N6005A 1N6005A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 16V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 48 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.9 V
товар відсутній
1N6006A 1N6006A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 18V 500MW DO35
товар відсутній
1N6006C 1N6006C Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 18V 500MW DO35
товар відсутній
1N6006D 1N6006D Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 18V 500MW DO35
товар відсутній
1N6010A 1N6010A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 88 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
1N6012A 1N6012A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 33V 500MW DO35
товар відсутній
1N6012C 1N6012C Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 33V 500MW DO35
товар відсутній
1N6012D 1N6012D Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 33V 500MW DO35
товар відсутній
1N6015A 1N6015A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 43V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
товар відсутній
1N6020A 1N6020A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 68V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
1N6022B 1N6022B Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
товар відсутній
1N6026B 1N6026B Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 120V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 91 V
товар відсутній
1N6027A 1N6027A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6027B 1N6027B Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6027C 1N6027C Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6027D 1N6027D Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6030A 1N6030A Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 180V 500MW DO35
товар відсутній
1N6030B 1N6030B Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 180V 500MW DO35
товар відсутній
1N6030C 1N6030C Microchip Technology 10923-sa5-60-datasheet Description: DIODE ZENER 180V 500MW DO35
товар відсутній
1N5754B 10921-sa5-55-datasheet
1N5754B
Виробник: Microchip Technology
Description: DIODE ZENER 56V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
товар відсутній
1N5755B 10921-sa5-55-datasheet
1N5755B
Виробник: Microchip Technology
Description: DIODE ZENER 62V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 215 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
1N5756B 10921-sa5-55-datasheet
1N5756B
Виробник: Microchip Technology
Description: DIODE ZENER 68V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 48 V
товар відсутній
1N5757B 10921-sa5-55-datasheet
1N5757B
Виробник: Microchip Technology
Description: DIODE ZENER 75V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 53 V
товар відсутній
1N5802US 132687-lds-0211-1-datasheet
1N5802US
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+594.89 грн
100+ 531.62 грн
1N5804US 132687-lds-0211-1-datasheet
1N5804US
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 302 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+614.24 грн
100+ 549.38 грн
1N5806US 132687-lds-0211-1-datasheet
1N5806US
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
на замовлення 75690 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+387.04 грн
100+ 346.07 грн
1N5809US 124792-lds-0168-1-datasheet
1N5809US
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+531.82 грн
100+ 475.44 грн
1N5811US 124792-lds-0168-1-datasheet
1N5811US
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+455.84 грн
100+ 407.89 грн
1N5819-1 131894-lds-0301-datasheet
1N5819-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
товар відсутній
1N5820US 131998-lds-0303-1-datasheet
1N5820US
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
товар відсутній
1N5821US 131998-lds-0303-1-datasheet
1N5821US
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 30V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
товар відсутній
1N5913BUR-1 10865-sa3-35-datasheet
1N5913BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 3.3V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
1N5914BUR-1 10865-sa3-35-datasheet
1N5914BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 3.6V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
товар відсутній
1N5916BUR-1 10865-sa3-35-datasheet
1N5916BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.3V 1.25W DO213AB
товар відсутній
1N5917BUR-1 10865-sa3-35-datasheet
1N5917BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 1.25W DO213AB
товар відсутній
1N5918BUR-1 10865-sa3-35-datasheet
1N5918BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.25W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товар відсутній
1N5919BUR-1 10865-sa3-35-datasheet
1N5919BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
товар відсутній
1N5922BUR-1 10865-sa3-35-datasheet
1N5922BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 1.25W DO213AB
товар відсутній
1N5923BUR-1 10865-sa3-35-datasheet
1N5923BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 8.2V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 6.5 V
товар відсутній
1N5927BUR-1 10865-sa3-35-datasheet
1N5927BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 6.5 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
товар відсутній
1N5929BUR-1 10865-sa3-35-datasheet
1N5929BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 15V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
товар відсутній
1N5930BUR-1 10865-sa3-35-datasheet
1N5930BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 12.2 V
товар відсутній
1N5931BUR-1 10865-sa3-35-datasheet
1N5931BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 18V 1.25W DO213AB
товар відсутній
1N5932BUR-1 10865-sa3-35-datasheet
1N5932BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 20V 1.25W DO213AB
товар відсутній
1N5934BUR-1 10865-sa3-35-datasheet
1N5934BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 24V 1.25W DO213AB
товар відсутній
1N5938BUR-1 10865-sa3-35-datasheet
1N5938BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 36V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+225.05 грн
100+ 201.39 грн
Мінімальне замовлення: 2
1N5941BUR-1 10865-sa3-35-datasheet
1N5941BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 47V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 67 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 35.8 V
товар відсутній
1N5942BUR-1 10865-sa3-35-datasheet
1N5942BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 51V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 38.8 V
товар відсутній
1N5948BUR-1 10865-sa3-35-datasheet
1N5948BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 91V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 69.2 V
товар відсутній
1N5949BUR-1 10865-sa3-35-datasheet
1N5949BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 100V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 76 V
товар відсутній
1N5953BUR-1 10865-sa3-35-datasheet
1N5953BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 150V 1.25W DO213AB
товар відсутній
1N5955BUR-1 10865-sa3-35-datasheet
1N5955BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 180V 1.25W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 900 Ohms
Supplier Device Package: DO-213AB
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 136.8 V
товар відсутній
1N5969 10913-sa5-37-datasheet
1N5969
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 4.74 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1512.31 грн
1N5995C 10923-sa5-60-datasheet
1N5995C
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
товар відсутній
1N5995D 10923-sa5-60-datasheet
1N5995D
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4 V
товар відсутній
1N5997A 10923-sa5-60-datasheet
1N5997A
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO35
товар відсутній
1N6000A 10923-sa5-60-datasheet
1N6000A
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
товар відсутній
1N6000C 10923-sa5-60-datasheet
1N6000C
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
товар відсутній
1N6000D 10923-sa5-60-datasheet
1N6000D
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
товар відсутній
1N6003D 10923-sa5-60-datasheet
1N6003D
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.9 V
товар відсутній
1N6005A 10923-sa5-60-datasheet
1N6005A
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 48 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.9 V
товар відсутній
1N6006A 10923-sa5-60-datasheet
1N6006A
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
товар відсутній
1N6006C 10923-sa5-60-datasheet
1N6006C
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
товар відсутній
1N6006D 10923-sa5-60-datasheet
1N6006D
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
товар відсутній
1N6010A 10923-sa5-60-datasheet
1N6010A
Виробник: Microchip Technology
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 88 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
1N6012A 10923-sa5-60-datasheet
1N6012A
Виробник: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
товар відсутній
1N6012C 10923-sa5-60-datasheet
1N6012C
Виробник: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
товар відсутній
1N6012D 10923-sa5-60-datasheet
1N6012D
Виробник: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
товар відсутній
1N6015A 10923-sa5-60-datasheet
1N6015A
Виробник: Microchip Technology
Description: DIODE ZENER 43V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
товар відсутній
1N6020A 10923-sa5-60-datasheet
1N6020A
Виробник: Microchip Technology
Description: DIODE ZENER 68V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
1N6022B 10923-sa5-60-datasheet
1N6022B
Виробник: Microchip Technology
Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
товар відсутній
1N6026B 10923-sa5-60-datasheet
1N6026B
Виробник: Microchip Technology
Description: DIODE ZENER 120V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 91 V
товар відсутній
1N6027A 10923-sa5-60-datasheet
1N6027A
Виробник: Microchip Technology
Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6027B 10923-sa5-60-datasheet
1N6027B
Виробник: Microchip Technology
Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6027C 10923-sa5-60-datasheet
1N6027C
Виробник: Microchip Technology
Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6027D 10923-sa5-60-datasheet
1N6027D
Виробник: Microchip Technology
Description: DIODE ZENER 130V 500MW DO35
товар відсутній
1N6030A 10923-sa5-60-datasheet
1N6030A
Виробник: Microchip Technology
Description: DIODE ZENER 180V 500MW DO35
товар відсутній
1N6030B 10923-sa5-60-datasheet
1N6030B
Виробник: Microchip Technology
Description: DIODE ZENER 180V 500MW DO35
товар відсутній
1N6030C 10923-sa5-60-datasheet
1N6030C
Виробник: Microchip Technology
Description: DIODE ZENER 180V 500MW DO35
товар відсутній
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