Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (337538) > Сторінка 852 з 5626
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1N6012C | Microchip Technology |
 Description: DIODE ZENER 33V 500MW DO35 |
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1N6012D | Microchip Technology |
Description: DIODE ZENER 33V 500MW DO35 |
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1N6015A | Microchip Technology |
Description: DIODE ZENER 43V 500MW DO35 Tolerance: ±10% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 180 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 27 V |
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1N6020A | Microchip Technology |
Description: DIODE ZENER 68V 500MW DO35 Tolerance: ±10% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 280 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 43 V |
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1N6022B | Microchip Technology |
Description: DIODE ZENER 82V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 280 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 62 V |
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1N6026B | Microchip Technology |
Description: DIODE ZENER 120V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 120 V Impedance (Max) (Zzt): 800 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 91 V |
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1N6027A | Microchip Technology |
Description: DIODE ZENER 130V 500MW DO35 |
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1N6027B | Microchip Technology |
Description: DIODE ZENER 130V 500MW DO35 |
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1N6027C | Microchip Technology |
Description: DIODE ZENER 130V 500MW DO35 |
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1N6027D | Microchip Technology |
Description: DIODE ZENER 130V 500MW DO35 |
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1N6030A | Microchip Technology |
Description: DIODE ZENER 180V 500MW DO35 |
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1N6030B | Microchip Technology |
Description: DIODE ZENER 180V 500MW DO35 |
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1N6030C | Microchip Technology |
Description: DIODE ZENER 180V 500MW DO35 |
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1N6030D | Microchip Technology |
Description: DIODE ZENER 180V 500MW DO35 |
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1N6075US | Microchip Technology |
Description: DIODE GEN PURP 150V 3A D-5A |
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1N6080 | Microchip Technology |
Description: DIODE GEN PURP 100V 2A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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1N6080US | Microchip Technology |
Description: DIODE GEN PURP 100V 2A G-MELF Packaging: Bulk Package / Case: SQ-MELF, G Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G-MELF (D-5C) Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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1N6081 | Microchip Technology |
Description: DIODE GEN PURP 150V 2A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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1N6081US | Microchip Technology |
Description: DIODE GEN PURP 150V 2A G-MELF Packaging: Bulk Package / Case: SQ-MELF, G Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: G-MELF (D-5C) Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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1N6103AUS | Microchip Technology |
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF |
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1N6107A | Microchip Technology |
Description: TVS DIODE 8.4VWM 15.6VC AXIAL |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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1N6108AUS | Microchip Technology |
Description: TVS DIODE 9.1VWM 16.9VC SQ-MELF |
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1N6109AUS | Microchip Technology |
Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF |
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| 1N6110 | Microchip Technology |
Description: TVS DIODE 11.4V 22.05V AXIAL |
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1N6110AUS | Microchip Technology |
Description: TVS DIODE 11.4VWM 21VC B SQ-MELF |
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1N6111A | Microchip Technology |
Description: TVS DIODE 12.2VWM 22.3VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.4A Voltage - Reverse Standoff (Typ): 12.2V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.3V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
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1N6111AUS | Microchip Technology |
Description: TVS DIODE 12.2VWM 22.3VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 22.4A Voltage - Reverse Standoff (Typ): 12.2V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.3V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
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1N6113AUS | Microchip Technology |
Description: TVS DIODE 15.2VWM 27.7VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18A Voltage - Reverse Standoff (Typ): 15.2V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 19V Voltage - Clamping (Max) @ Ipp: 27.7V Power - Peak Pulse: 500W Power Line Protection: No |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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| 1N6114A | Microchip Technology |
Description: TVS DIODE 16.7V 30.5V AXIAL |
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1N6114AUS | Microchip Technology |
Description: TVS DIODE 16.7V 30.5V B SQ-MELF |
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1N6118A | Microchip Technology |
Description: TVS DIODE 25.1VWM 45.7VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 25.1V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
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1N6118AUS | Microchip Technology |
Description: TVS DIODE 25.1VWM 45.7VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.9A Voltage - Reverse Standoff (Typ): 25.1V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
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1N6122A | Microchip Technology |
Description: TVS DIODE 35.8V 64.6V AXIAL |
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1N6124A | Microchip Technology |
Description: TVS DIODE 42.6V 77V AXIAL |
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1N6125A | Microchip Technology |
Description: TVS DIODE 47.1VWM 85.3VC AXIAL |
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1N6126AUS | Microchip Technology |
Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.1A Voltage - Reverse Standoff (Typ): 51.7V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.6V Voltage - Clamping (Max) @ Ipp: 97.1V Power - Peak Pulse: 500W Power Line Protection: No |
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1N6129A | Microchip Technology |
Description: TVS DIODE 69.2VWM 125.1VC AXIAL |
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1N6133A | Microchip Technology |
Description: TVS DIODE 98.8VWM 178.8VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.8A Voltage - Reverse Standoff (Typ): 98.8V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 123.5V Voltage - Clamping (Max) @ Ipp: 178.8V Power - Peak Pulse: 500W Power Line Protection: No |
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1N6133AUS | Microchip Technology |
Description: TVS DIODE 98.8VWM 178.8V SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.8A Voltage - Reverse Standoff (Typ): 98.8V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 123.5V Voltage - Clamping (Max) @ Ipp: 178.8V Power - Peak Pulse: 500W Power Line Protection: No |
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1N6136A | Microchip Technology |
Description: TVS DIODE 136.8V 245.7V AXIAL |
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1N6136AUS | Microchip Technology |
Description: TVS DIODE 136.8V 245.7V SQ-MELF |
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1N6137A | Microchip Technology |
Description: TVS DIODE 152VWM 273VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.8A Voltage - Reverse Standoff (Typ): 152V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 273V Power - Peak Pulse: 500W Power Line Protection: No |
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1N6137AUS | Microchip Technology |
Description: TVS DIODE 152VWM 273VC B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.8A Voltage - Reverse Standoff (Typ): 152V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 273V Power - Peak Pulse: 500W Power Line Protection: No |
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| 1N6139A | Microchip Technology |
Description: TVS DIODE 5.7VWM 11.2VC AXIAL |
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| 1N6139AUS | Microchip Technology |
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF |
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| 1N6142A | Microchip Technology |
Description: TVS DIODE 7.6VWM 14.5VC AXIAL |
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1N6143A | Microchip Technology |
Description: TVS DIODE 8.4VWM 15.6VC AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 96.2A Voltage - Reverse Standoff (Typ): 8.4V Supplier Device Package: B, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 10.45V Voltage - Clamping (Max) @ Ipp: 15.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1N6143AUS | Microchip Technology |
Description: TVS DIODE 8.4VWM 15.6VC SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, C Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 96.2A Voltage - Reverse Standoff (Typ): 8.4V Supplier Device Package: C, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 10.45V Voltage - Clamping (Max) @ Ipp: 15.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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| 1N6144A | Microchip Technology |
Description: TVS DIODE 9.1VWM 16.9VC AXIAL |
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| 1N6151A | Microchip Technology |
Description: TVS DIODE 18.2V 33.3V AXIAL |
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| 1N6157A | Microchip Technology |
Description: TVS DIODE 32.7VWM 59.1VC AXIAL |
на замовлення 61 шт: термін постачання 21-31 дні (днів) |
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| 1N6164AUS | Microchip Technology |
Description: TVS DIODE 62.2VWM 112.8V SQ-MELF |
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| 1N6166A | Microchip Technology |
Description: TVS DIODE 76VWM 137.6VC AXIAL |
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| 1N6167AUS | Microchip Technology |
Description: TVS DIODE 86.6V 151.3V C SQ-MELF |
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1N6169A | Microchip Technology |
Description: TVS DIODE 98.8V 178.8V AXIAL |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| 1N6170A | Microchip Technology |
Description: TVS DIODE 114VWM 206.3VC AXIAL |
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| 1N6170AUS | Microchip Technology |
Description: TVS DIODE 114VWM 206.3VC SQ-MELF |
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1N6309US | Microchip Technology |
Description: DIODE ZENER 2.4V 500MW MELF |
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| 1N6358 | Microchip Technology |
Description: TVS DIODE 10VWM 14.1VC DO13 Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 90A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-13 Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.7V Voltage - Clamping (Max) @ Ipp: 14.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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| 1N6359 | Microchip Technology |
Description: TVS DIODE 12VWM 16.5VC DO13 Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 70A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-13 Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.1V Voltage - Clamping (Max) @ Ipp: 16.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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| 1N6015A |
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Виробник: Microchip Technology
Description: DIODE ZENER 43V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Description: DIODE ZENER 43V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 180 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
товар відсутній
| 1N6020A |
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Виробник: Microchip Technology
Description: DIODE ZENER 68V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Description: DIODE ZENER 68V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
| 1N6022B |
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Виробник: Microchip Technology
Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
Description: DIODE ZENER 82V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 280 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
товар відсутній
| 1N6026B |
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Виробник: Microchip Technology
Description: DIODE ZENER 120V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 91 V
Description: DIODE ZENER 120V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 120 V
Impedance (Max) (Zzt): 800 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 91 V
товар відсутній
| 1N6080 |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| 1N6080US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2A G-MELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 2A G-MELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
| 1N6081 |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
| 1N6081US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2A G-MELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 2A G-MELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
| 1N6103AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
товар відсутній
| 1N6107A |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.4VWM 15.6VC AXIAL
Description: TVS DIODE 8.4VWM 15.6VC AXIAL
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 911.38 грн |
| 1N6108AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 9.1VWM 16.9VC SQ-MELF
Description: TVS DIODE 9.1VWM 16.9VC SQ-MELF
товар відсутній
| 1N6109AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF
Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF
товар відсутній
| 1N6110AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 11.4VWM 21VC B SQ-MELF
Description: TVS DIODE 11.4VWM 21VC B SQ-MELF
товар відсутній
| 1N6111A |
|
Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 22.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.2VWM 22.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
| 1N6111AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 22.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.2VWM 22.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
| 1N6113AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 15.2VWM 27.7VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 15.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 15.2VWM 27.7VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 15.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1046.45 грн |
| 100+ | 935.57 грн |
| 1N6114AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 16.7V 30.5V B SQ-MELF
Description: TVS DIODE 16.7V 30.5V B SQ-MELF
товар відсутній
| 1N6118A |
|
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 25.1VWM 45.7VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
| 1N6118AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 25.1VWM 45.7VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
| 1N6126AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| 1N6133A |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 178.8VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 98.8VWM 178.8VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| 1N6133AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM 178.8V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 98.8VWM 178.8V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| 1N6136AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V SQ-MELF
Description: TVS DIODE 136.8V 245.7V SQ-MELF
товар відсутній
| 1N6137A |
|
Виробник: Microchip Technology
Description: TVS DIODE 152VWM 273VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 152VWM 273VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| 1N6137AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 152VWM 273VC B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 152VWM 273VC B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
товар відсутній
| 1N6139AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
товар відсутній
| 1N6143A |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.4VWM 15.6VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 8.4VWM 15.6VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
| 1N6143AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 8.4VWM 15.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 8.4VWM 15.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
| 1N6157A |
|
Виробник: Microchip Technology
Description: TVS DIODE 32.7VWM 59.1VC AXIAL
Description: TVS DIODE 32.7VWM 59.1VC AXIAL
на замовлення 61 шт:
термін постачання 21-31 дні (днів)| 1N6164AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 62.2VWM 112.8V SQ-MELF
Description: TVS DIODE 62.2VWM 112.8V SQ-MELF
товар відсутній
| 1N6167AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 86.6V 151.3V C SQ-MELF
Description: TVS DIODE 86.6V 151.3V C SQ-MELF
товар відсутній
| 1N6169A |
|
Виробник: Microchip Technology
Description: TVS DIODE 98.8V 178.8V AXIAL
Description: TVS DIODE 98.8V 178.8V AXIAL
на замовлення 50 шт:
термін постачання 21-31 дні (днів)| 1N6170AUS |
|
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
товар відсутній
| 1N6358 |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 14.1VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10VWM 14.1VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| 1N6359 |
|
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 16.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM 16.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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