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1N6073US 1N6073US Microchip Technology 1N6073US-1N6081US.pdf Description: DIODE GEN PURP 50V 3A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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1N6075US 1N6075US Microchip Technology 1N6073US-1N6081US.pdf Description: DIODE GEN PURP 150V 3A D-5A
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1N6080 1N6080 Microchip Technology 10971-sa7-53-datasheet Description: DIODE STANDARD 100V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N6080US 1N6080US Microchip Technology 1N6073US-1N6081US.pdf Description: DIODE STANDARD 100V 2A GMELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N6081 1N6081 Microchip Technology 10971-sa7-53-datasheet Description: DIODE STANDARD 150V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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1N6081US 1N6081US Microchip Technology 1N6073US-1N6081US.pdf Description: DIODE STANDARD 150V 2A GMELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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1N6103AUS 1N6103AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
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1N6106A 1N6106A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 7.6VWM 14.5VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.5A
Voltage - Reverse Standoff (Typ): 7.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6106AUS 1N6106AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 7.6VWM 14.5VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.5A
Voltage - Reverse Standoff (Typ): 7.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6107A 1N6107A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 8.4VWM 15.6VC AXIAL
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+1034.44 грн
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1N6108AUS 1N6108AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 9.1VWM 16.9VC SQ-MELF
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1N6109AUS 1N6109AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF
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1N6110 Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 11.4V 22.05V AXIAL
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1N6110AUS 1N6110AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 11.4VWM 21VC B SQ-MELF
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1N6111A 1N6111A Microchip Technology lds-0277.pdf Description: TVS DIODE 12.2VWM 22.3V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6111AUS 1N6111AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 12.2VWM 22.3VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6113AUS 1N6113AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 15.2VWM 27.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 15.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
1+895.66 грн
100+800.07 грн
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1N6114A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 16.7V 30.5V AXIAL
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1N6114AUS 1N6114AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 16.7V 30.5V B SQ-MELF
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1N6118A 1N6118A Microchip Technology lds-0277.pdf Description: TVS DIODE 25.1VWM 45.7V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6118AUS 1N6118AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6122A 1N6122A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 35.8V 64.6V AXIAL
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1N6124A 1N6124A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 42.6V 77V AXIAL
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1N6125A 1N6125A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 47.1VWM 85.3VC AXIAL
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1N6126AUS 1N6126AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6129A 1N6129A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 69.2VWM 125.1VC AXIAL
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1N6130A 1N6130A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 76VWM 137.6VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 76V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137.6V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6130AUS 1N6130AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 76VWM 137.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 76V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137.6V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6133A 1N6133A Microchip Technology lds-0277.pdf Description: TVS DIODE 98.8VWM AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6133AUS 1N6133AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 98.8VWM B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6134A 1N6134A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6134AUS 1N6134AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6136A 1N6136A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 136.8V 245.7V AXIAL
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1N6136AUS 1N6136AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 136.8V 245.7V SQ-MELF
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1N6137A 1N6137A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 152VWM 273VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6137AUS 1N6137AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 152VWM 273VC B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6139A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 5.7VWM 11.2VC AXIAL
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1N6139AUS Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
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1N6142A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 7.6VWM 14.5VC AXIAL
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1N6143A 1N6143A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 8.4VWM 15.6VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6143AUS 1N6143AUS Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE 8.4VWM 15.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6144A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 9.1VWM 16.9VC AXIAL
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1N6151A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 18.2V 33.3V AXIAL
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1N6157A 1N6157A Microchip Technology 1N6138_1N6173A.pdf Description: TVS DIODE 32.7VWM 59.1V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.4A
Voltage - Reverse Standoff (Typ): 32.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
1+1115.13 грн
100+997.87 грн
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1N6160A 1N6160A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 42.6VWM 77VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 42.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6160AUS 1N6160AUS Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE 42.6VWM 77VC C SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 42.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6164AUS Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE 62.2VWM 112.8V SQ-MELF
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1N6166A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 76VWM 137.6VC AXIAL
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1N6167AUS Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE 86.6V 151.3V C SQ-MELF
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1N6169A 1N6169A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 98.8V 178.8V AXIAL
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
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1N6170A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 114VWM 206.3VC AXIAL
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1N6170AUS 1N6170AUS Microchip Technology 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6171A 1N6171A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 121.6VWM 218.4VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 218.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6172A 1N6172A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 136.8VWM 245.7VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 136.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 245.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6309US 1N6309US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 2.4V 500MW MELF
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1N6310 1N6310 Microchip Technology 10924-lds-0193-datasheet Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 1 V
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1N6358 Microchip Technology 129294-lds-0292-datasheet Description: TVS DIODE 10VWM 14.1VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6359 1N6359 Microchip Technology 129294-lds-0292-datasheet Description: TVS DIODE 12VWM 16.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6360 Microchip Technology 129294-lds-0292-datasheet Description: TVS DIODE 15VWM 20.6VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 20.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N645-1 1N645-1 Microchip Technology 5878-1n645-1-datasheet Description: DIODE STD 225V 400MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
на замовлення 3334 шт:
термін постачання 21-31 дні (днів)
3+138.79 грн
100+124.33 грн
Мінімальне замовлення: 3
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1N6073US 1N6073US-1N6081US.pdf
1N6073US
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 3A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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1N6075US 1N6073US-1N6081US.pdf
1N6075US
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A D-5A
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1N6080 10971-sa7-53-datasheet
1N6080
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N6080US 1N6073US-1N6081US.pdf
1N6080US
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 2A GMELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N6081 10971-sa7-53-datasheet
1N6081
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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1N6081US 1N6073US-1N6081US.pdf
1N6081US
Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2A GMELF
Packaging: Bulk
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G-MELF (D-5C)
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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1N6103AUS 127892-lds-0277-1-datasheet
1N6103AUS
Виробник: Microchip Technology
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
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1N6106A 127891-lds-0277-datasheet
1N6106A
Виробник: Microchip Technology
Description: TVS DIODE 7.6VWM 14.5VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.5A
Voltage - Reverse Standoff (Typ): 7.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6106AUS 127892-lds-0277-1-datasheet
1N6106AUS
Виробник: Microchip Technology
Description: TVS DIODE 7.6VWM 14.5VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.5A
Voltage - Reverse Standoff (Typ): 7.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6107A 127891-lds-0277-datasheet
1N6107A
Виробник: Microchip Technology
Description: TVS DIODE 8.4VWM 15.6VC AXIAL
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1034.44 грн
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1N6108AUS 127892-lds-0277-1-datasheet
1N6108AUS
Виробник: Microchip Technology
Description: TVS DIODE 9.1VWM 16.9VC SQ-MELF
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1N6109AUS 127892-lds-0277-1-datasheet
1N6109AUS
Виробник: Microchip Technology
Description: TVS DIODE 9.9VWM 18.2VC SQ-MELF
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1N6110 127891-lds-0277-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 11.4V 22.05V AXIAL
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1N6110AUS 127892-lds-0277-1-datasheet
1N6110AUS
Виробник: Microchip Technology
Description: TVS DIODE 11.4VWM 21VC B SQ-MELF
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1N6111A lds-0277.pdf
1N6111A
Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 22.3V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6111AUS lds-0277-1.pdf
1N6111AUS
Виробник: Microchip Technology
Description: TVS DIODE 12.2VWM 22.3VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 22.4A
Voltage - Reverse Standoff (Typ): 12.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6113AUS lds-0277-1.pdf
1N6113AUS
Виробник: Microchip Technology
Description: TVS DIODE 15.2VWM 27.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 15.2V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 27.7V
Power - Peak Pulse: 500W
Power Line Protection: No
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+895.66 грн
100+800.07 грн
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1N6114A 127891-lds-0277-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 16.7V 30.5V AXIAL
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1N6114AUS 127892-lds-0277-1-datasheet
1N6114AUS
Виробник: Microchip Technology
Description: TVS DIODE 16.7V 30.5V B SQ-MELF
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1N6118A lds-0277.pdf
1N6118A
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6118AUS lds-0277-1.pdf
1N6118AUS
Виробник: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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1N6122A 127891-lds-0277-datasheet
1N6122A
Виробник: Microchip Technology
Description: TVS DIODE 35.8V 64.6V AXIAL
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1N6124A 127891-lds-0277-datasheet
1N6124A
Виробник: Microchip Technology
Description: TVS DIODE 42.6V 77V AXIAL
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1N6125A 127891-lds-0277-datasheet
1N6125A
Виробник: Microchip Technology
Description: TVS DIODE 47.1VWM 85.3VC AXIAL
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1N6126AUS 127892-lds-0277-1-datasheet
1N6126AUS
Виробник: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6129A 127891-lds-0277-datasheet
1N6129A
Виробник: Microchip Technology
Description: TVS DIODE 69.2VWM 125.1VC AXIAL
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1N6130A 127891-lds-0277-datasheet
1N6130A
Виробник: Microchip Technology
Description: TVS DIODE 76VWM 137.6VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 76V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137.6V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6130AUS 127892-lds-0277-1-datasheet
1N6130AUS
Виробник: Microchip Technology
Description: TVS DIODE 76VWM 137.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 76V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137.6V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6133A lds-0277.pdf
1N6133A
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6133AUS lds-0277-1.pdf
1N6133AUS
Виробник: Microchip Technology
Description: TVS DIODE 98.8VWM B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 98.8V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 123.5V
Voltage - Clamping (Max) @ Ipp: 178.8V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6134A 127891-lds-0277-datasheet
1N6134A
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6134AUS 127892-lds-0277-1-datasheet
1N6134AUS
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.4A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6136A 127891-lds-0277-datasheet
1N6136A
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V AXIAL
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1N6136AUS 127892-lds-0277-1-datasheet
1N6136AUS
Виробник: Microchip Technology
Description: TVS DIODE 136.8V 245.7V SQ-MELF
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1N6137A 127891-lds-0277-datasheet
1N6137A
Виробник: Microchip Technology
Description: TVS DIODE 152VWM 273VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6137AUS 127892-lds-0277-1-datasheet
1N6137AUS
Виробник: Microchip Technology
Description: TVS DIODE 152VWM 273VC B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 152V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 273V
Power - Peak Pulse: 500W
Power Line Protection: No
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1N6139A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 5.7VWM 11.2VC AXIAL
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1N6139AUS 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 5.7VWM 11.2VC SQ-MELF
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1N6142A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 7.6VWM 14.5VC AXIAL
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1N6143A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
1N6143A
Виробник: Microchip Technology
Description: TVS DIODE 8.4VWM 15.6VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6143AUS 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6143AUS
Виробник: Microchip Technology
Description: TVS DIODE 8.4VWM 15.6VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96.2A
Voltage - Reverse Standoff (Typ): 8.4V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.45V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6144A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 9.1VWM 16.9VC AXIAL
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1N6151A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 18.2V 33.3V AXIAL
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1N6157A 1N6138_1N6173A.pdf
1N6157A
Виробник: Microchip Technology
Description: TVS DIODE 32.7VWM 59.1V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.4A
Voltage - Reverse Standoff (Typ): 32.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1115.13 грн
100+997.87 грн
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1N6160A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
1N6160A
Виробник: Microchip Technology
Description: TVS DIODE 42.6VWM 77VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 42.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6160AUS 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6160AUS
Виробник: Microchip Technology
Description: TVS DIODE 42.6VWM 77VC C SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 42.6V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6164AUS 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 62.2VWM 112.8V SQ-MELF
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1N6166A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 76VWM 137.6VC AXIAL
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1N6167AUS 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 86.6V 151.3V C SQ-MELF
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1N6169A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
1N6169A
Виробник: Microchip Technology
Description: TVS DIODE 98.8V 178.8V AXIAL
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
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1N6170A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC AXIAL
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1N6170AUS 127854-1n6138us-1n6173aus-tvs-diode-series-datasheet
1N6170AUS
Виробник: Microchip Technology
Description: TVS DIODE 114VWM 206.3VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, C
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 114V
Supplier Device Package: C, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 142.5V
Voltage - Clamping (Max) @ Ipp: 206.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6171A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
1N6171A
Виробник: Microchip Technology
Description: TVS DIODE 121.6VWM 218.4VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 121.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 218.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6172A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
1N6172A
Виробник: Microchip Technology
Description: TVS DIODE 136.8VWM 245.7VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 136.8V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 245.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6309US 11083-lds-0193-1-datasheet
1N6309US
Виробник: Microchip Technology
Description: DIODE ZENER 2.4V 500MW MELF
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1N6310 10924-lds-0193-datasheet
1N6310
Виробник: Microchip Technology
Description: DIODE ZENER 2.7V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 60 µA @ 1 V
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1N6358 129294-lds-0292-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 14.1VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 14.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6359 129294-lds-0292-datasheet
1N6359
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 16.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 16.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N6360 129294-lds-0292-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 15VWM 20.6VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.6V
Voltage - Clamping (Max) @ Ipp: 20.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N645-1 5878-1n645-1-datasheet
1N645-1
Виробник: Microchip Technology
Description: DIODE STD 225V 400MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
на замовлення 3334 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.79 грн
100+124.33 грн
Мінімальне замовлення: 3
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