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1N823-1 1N823-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N823A 1N823A Microchip Technology 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 1195 шт:
термін постачання 21-31 дні (днів)
2+238.45 грн
100+213.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N823AUR 1N823AUR Microchip Technology 1N821UR-1N829AUR.pdf Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N823AUR-1 1N823AUR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N823UR-1 1N823UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N825 1N825 Microchip Technology 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
2+335.53 грн
25+300.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N825-1 1N825-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N825A 1N825A Microchip Technology 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 707 шт:
термін постачання 21-31 дні (днів)
2+278.47 грн
100+248.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N825AUR-1 1N825AUR-1 Microchip Technology 1N821UR-1-1N829AUR-1.pdf Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N825UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.55V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N827 1N827 Microchip Technology 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
1+459.86 грн
25+411.51 грн
В кошику  од. на суму  грн.
1N827-1 1N827-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N827A 1N827A Microchip Technology 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
1+490.52 грн
100+438.95 грн
В кошику  од. на суму  грн.
1N827AUR-1 1N827AUR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N827UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N829 1N829 Microchip Technology 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
1+1024.47 грн
25+915.94 грн
В кошику  од. на суму  грн.
1N829-1 1N829-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N829A 1N829A Microchip Technology 1N821_1N829A-1_DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 544 шт:
термін постачання 21-31 дні (днів)
1+924.84 грн
100+826.55 грн
В кошику  од. на суму  грн.
1N829AUR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
товару немає в наявності
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1N829UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
1+2375.11 грн
25+2123.95 грн
В кошику  од. на суму  грн.
1N914UR 1N914UR Microchip Technology 1N914UR.pdf Description: DIODE STANDARD 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
2+205.24 грн
100+182.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N957A 1N957A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 6.8V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
товару немає в наявності
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1N961A 1N961A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 10V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 8.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
3+153.29 грн
100+137.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1N962A 1N962A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 11V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
товару немає в наявності
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1N963A 1N963A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 12V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 11.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
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1N964A 1N964A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 13V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
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1N965A 1N965A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 15V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
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1N966A 1N966A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 16V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
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1N967A 1N967A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 18V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-7
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
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1N968A 1N968A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 20V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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1N970A 1N970A Microchip Technology 1N957B(-1)-1N992B(-1),e3.pdf Description: DIODE ZENER 24V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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1N971A 1N971A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 27V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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1N973A 1N973A Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 33V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
на замовлення 435 шт:
термін постачання 21-31 дні (днів)
3+154.14 грн
Мінімальне замовлення: 3
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1N980B 1N980B Microchip Technology 1N957B(-1)-1N992B(-1),e3.pdf Description: DIODE ZENER 62V 500MW DO7
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1N992A 1N992A Microchip Technology 10900-sa5-11-datasheet Description: DIODE ZENER 200V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 2500 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 152 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+898.44 грн
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1N992B 1N992B Microchip Technology 1N957B(-1)-1N992B(-1),e3.pdf Description: DIODE ZENER 200V 500MW DO7
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2N2219 2N2219 Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N2219AL 2N2219AL Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2N2222AL 2N2222AL Microchip Technology 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2N2369AU Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 15V SMD
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SMD
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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2N2369AUA 2N2369AUA Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 15V SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
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2N2369AUB 2N2369AUB Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 20V SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
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2N2484UB 2N2484UB Microchip Technology 2N2484+MIL-PRF-19500_376.pdf Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
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2N2605 2N2605 Microchip Technology 8918-lds-0092-datasheet Description: TRANS PNP 60V 0.03A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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2N2905AL 2N2905AL Microchip Technology LDS-0186_2N2904-05%28AL%29.pdf Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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2N2906AUB 2N2906AUB Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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2N2907AL 2N2907AL Microchip Technology 00005313A.pdf Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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2N2946A Microchip Technology 124373-lds-0236-datasheet Description: TRANS PNP 35V 0.1A TO46-3
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
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2N3019S 2N3019S Microchip Technology 125195-lds-0185-4-datasheet Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
1+1669.13 грн
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2N3057A Microchip Technology 125196-lds-0185-1-datasheet Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2N3439L 2N3439L Microchip Technology 124290-lds-0022-1-datasheet Description: TRANS NPN 350V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
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2N3439UA 2N3439UA Microchip Technology 125353-lds-0022-3-datasheet Description: TRANS NPN 350V 1A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
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2N3440L 2N3440L Microchip Technology 2N3439L-2N3440L-LDS-0022-1-MIL-PRF-19500-368.pdf Description: TRANS NPN 250V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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2N3501L 2N3501L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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2N3700UB 2N3700UB Microchip Technology 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf Description: TRANS NPN 80V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
1+741.74 грн
100+662.95 грн
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2N3735 2N3735 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3735L 2N3735L Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3737 2N3737 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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2N3737UB 2N3737UB Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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2N3810 2N3810 Microchip Technology 2N3810-2N3811-MIL-PRF-19500-336.pdf Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Part Status: Active
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
1+1197.35 грн
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1N823-1 125462-lds-0220-datasheet
1N823-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N823A 1N821_1N829A-1_DO-35.pdf
1N823A
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 1195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+238.45 грн
100+213.14 грн
Мінімальне замовлення: 2
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1N823AUR 1N821UR-1N829AUR.pdf
1N823AUR
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N823AUR-1 11037-lds-0220-1-datasheet
1N823AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N823UR-1 11037-lds-0220-1-datasheet
1N823UR-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N825 1N821_1N829A-1_DO-35.pdf
1N825
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+335.53 грн
25+300.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N825-1 125462-lds-0220-datasheet
1N825-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N825A 1N821_1N829A-1_DO-35.pdf
1N825A
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 707 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.47 грн
100+248.99 грн
Мінімальне замовлення: 2
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1N825AUR-1 1N821UR-1-1N829AUR-1.pdf
1N825AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N825UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.55V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.55 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827 1N821_1N829A-1_DO-35.pdf
1N827
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+459.86 грн
25+411.51 грн
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1N827-1 125462-lds-0220-datasheet
1N827-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827A 1N821_1N829A-1_DO-35.pdf
1N827A
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 179 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+490.52 грн
100+438.95 грн
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1N827AUR-1 11037-lds-0220-1-datasheet
1N827AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N827UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N829 1N821_1N829A-1_DO-35.pdf
1N829
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 55 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1024.47 грн
25+915.94 грн
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1N829-1 125462-lds-0220-datasheet
1N829-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N829A 1N821_1N829A-1_DO-35.pdf
1N829A
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 544 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+924.84 грн
100+826.55 грн
В кошику  од. на суму  грн.
1N829AUR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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1N829UR-1 11037-lds-0220-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2375.11 грн
25+2123.95 грн
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1N914UR 1N914UR.pdf
1N914UR
Виробник: Microchip Technology
Description: DIODE STANDARD 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.24 грн
100+182.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N957A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N957A
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
товару немає в наявності
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1N961A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N961A
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 8.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.29 грн
100+137.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1N962A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N962A
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 9.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
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1N963A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N963A
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 11.5 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
товару немає в наявності
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1N964A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N964A
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
товару немає в наявності
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1N965A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N965A
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
товару немає в наявності
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1N966A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N966A
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
товару немає в наявності
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1N967A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N967A
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-7
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 13.7 V
товару немає в наявності
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1N968A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N968A
Виробник: Microchip Technology
Description: DIODE ZENER 20V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 15.2 V
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1N970A 1N957B(-1)-1N992B(-1),e3.pdf
1N970A
Виробник: Microchip Technology
Description: DIODE ZENER 24V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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1N971A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N971A
Виробник: Microchip Technology
Description: DIODE ZENER 27V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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1N973A 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N973A
Виробник: Microchip Technology
Description: DIODE ZENER 33V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
на замовлення 435 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.14 грн
Мінімальне замовлення: 3
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1N980B 1N957B(-1)-1N992B(-1),e3.pdf
1N980B
Виробник: Microchip Technology
Description: DIODE ZENER 62V 500MW DO7
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1N992A 10900-sa5-11-datasheet
1N992A
Виробник: Microchip Technology
Description: DIODE ZENER 200V 500MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 2500 Ohms
Supplier Device Package: DO-7
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 152 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+898.44 грн
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1N992B 1N957B(-1)-1N992B(-1),e3.pdf
1N992B
Виробник: Microchip Technology
Description: DIODE ZENER 200V 500MW DO7
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2N2219 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
2N2219
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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2N2219AL 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
2N2219AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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2N2222AL 2N2221A%2C%202N2222A.pdf
2N2222AL
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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2N2369AU 2N2369A-2N4449-MIL-PRF-19500-317.pdf
Виробник: Microchip Technology
Description: TRANS NPN 15V SMD
Packaging: Bulk
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: SMD
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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2N2369AUA 2N2369A-2N4449-MIL-PRF-19500-317.pdf
2N2369AUA
Виробник: Microchip Technology
Description: TRANS NPN 15V SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
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2N2369AUB 2N2369A-2N4449-MIL-PRF-19500-317.pdf
2N2369AUB
Виробник: Microchip Technology
Description: TRANS NPN 20V SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
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2N2484UB 2N2484+MIL-PRF-19500_376.pdf
2N2484UB
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
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2N2605 8918-lds-0092-datasheet
2N2605
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.03A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
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2N2905AL LDS-0186_2N2904-05%28AL%29.pdf
2N2905AL
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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2N2906AUB 8896-lds-0059-datasheet
2N2906AUB
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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2N2907AL 00005313A.pdf
2N2907AL
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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2N2946A 124373-lds-0236-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 35V 0.1A TO46-3
Packaging: Bulk
Package / Case: TO-46-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
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2N3019S 125195-lds-0185-4-datasheet
2N3019S
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1669.13 грн
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2N3057A 125196-lds-0185-1-datasheet
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-46-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
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2N3439L 124290-lds-0022-1-datasheet
2N3439L
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
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2N3439UA 125353-lds-0022-3-datasheet
2N3439UA
Виробник: Microchip Technology
Description: TRANS NPN 350V 1A
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
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2N3440L 2N3439L-2N3440L-LDS-0022-1-MIL-PRF-19500-368.pdf
2N3440L
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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2N3501L 125198-lds-0276-1-datasheet
2N3501L
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
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2N3700UB 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf
2N3700UB
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
на замовлення 525 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+741.74 грн
100+662.95 грн
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2N3735 8978-lds-0173-datasheet
2N3735
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3735L 8978-lds-0173-datasheet
2N3735L
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N3737 8978-lds-0173-datasheet
2N3737
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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2N3737UB 8978-lds-0173-datasheet
2N3737UB
Виробник: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
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2N3810 2N3810-2N3811-MIL-PRF-19500-336.pdf
2N3810
Виробник: Microchip Technology
Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Part Status: Active
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1197.35 грн
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