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1N5523BUR-1 1N5523BUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 5.1V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2.5 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
1+554.9 грн
1N5532BUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 12V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
товар відсутній
1N5711-1 1N5711-1 Microchip Technology 8865-lds-0040-datasheet Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
на замовлення 913 шт:
термін постачання 21-31 дні (днів)
1+456.93 грн
100+ 409.44 грн
1N5712 1N5712 Microchip Technology 8865-lds-0040-datasheet Description: DIODE SCHOTTKY 20V 75MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
на замовлення 892 шт:
термін постачання 21-31 дні (днів)
1+407.55 грн
100+ 364.7 грн
1N5822US 1N5822US Microchip Technology 131998-lds-0303-1-datasheet Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
1+5371.82 грн
100+ 4803.56 грн
1N5907 1N5907 Microchip Technology 8921-lds-0095-datasheet Description: TVS DIODE 5VWM 8.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 120A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
1+1576.9 грн
1N6316US 1N6316US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 4.7V 500MW MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
товар відсутній
1N6325US 1N6325US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 11V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 8.5 V
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+1096.47 грн
100+ 980.52 грн
1N6335US 1N6335US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 30V 500MW MELF
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1N6392 1N6392 Microchip Technology 8886-lds-0053-datasheet Description: DIODE SCHOTTKY 45V 54A DO5
товар відсутній
1N6490US 1N6490US Microchip Technology 124793-lds-0183-1-datasheet Description: DIODE ZENER 5.1V 1.5W D5A
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
1+862.12 грн
1N6640US 1N6640US Microchip Technology 1N6639US,_1N6640US,_1N6641US.pdf Description: DIODE GEN PURP 75V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
1+624.65 грн
100+ 558.03 грн
1N6643US 1N6643US Microchip Technology 5895-1n6638-42-43us-datasheet Description: DIODE GEN PURP 50V 300MA D5B
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
1+543.92 грн
1N6659 1N6659 Microchip Technology 8910-lds-0068-datasheet Description: DIODE ARRAY GP 200V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254AA
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
1N6663US 1N6663US Microchip Technology 11107-sd88a-datasheet Description: DIODE GEN PURP 600V 500MA D5A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1593.36 грн
1N747A 1N747A Microchip Technology 10928-sa5-7-datasheet Description: DIODE ZENER 3.6V 500MW DO7
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
3+141.86 грн
100+ 126.09 грн
Мінімальне замовлення: 3
1N936A 1N936A Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1+769.64 грн
1N936B 1N936B Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товар відсутній
1N938B 1N938B Microchip Technology 5912-1n935-938b-datasheet Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товар відсутній
1N945B 1N945B Microchip Technology 124507-lds-0222-datasheet Description: DIODE ZENER 11.7V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
товар відсутній
1N965BE3 1N965BE3 Microchip Technology 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
товар відсутній
2N2323S 2N2323S Microchip Technology 6024-2n2323-datasheet Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
товар відсутній
2N3637UB 2N3637UB Microchip Technology 8968-lds-0156-datasheet Description: TRANS PNP 175V 1A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
1+998.5 грн
100+ 892.78 грн
2N6193 2N6193 Microchip Technology 6106-2n6193-datasheet Description: TRANS PNP 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
1+1014.17 грн
100+ 906.82 грн
S3480 S3480 Microchip Technology 8542-coe-23-datasheet Description: DIODE GEN PURP 800V 45A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+4051.99 грн
SBR60100 SBR60100 Microchip Technology Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
SBR6030L SBR6030L Microchip Technology 10320-msc1520-datasheet Description: DIODE SCHOTTKY 30V 60A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
UES1002 UES1002 Microchip Technology 11535-wt2-61-datasheet Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
1+1315.92 грн
UES1102SM UES1102SM Microchip Technology UES1102SM_Web.pdf Description: DIODE GEN PURP 100V 2.5A A-MELF
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
UES1103 UES1103 Microchip Technology 11536-wt2-63-datasheet Description: DIODE GEN PURP 150V 2.5A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
1+1435.83 грн
100+ 1283.16 грн
UES1103SM UES1103SM Microchip Technology Description: DIODE GEN PURP 150V 2.5A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A-MELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
1+1475.8 грн
100+ 1321.39 грн
UES1104 UES1104 Microchip Technology 11537-wt2-65-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+1576.12 грн
100+ 1410.36 грн
UES1106 UES1106 Microchip Technology 11537-wt2-65-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+1432.7 грн
100+ 1281.76 грн
UES1303 UES1303 Microchip Technology 11538-wt2-68-datasheet Description: DIODE GEN PURP 150V 6A AXIAL
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
UES706HR2 UES706HR2 Microchip Technology 11292-ues704-6-datasheet Description: DIODE GEN PURP 400V 20A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
UFR3020 UFR3020 Microchip Technology Description: DIODE GEN PURP 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
товар відсутній
CDLL5246BE3 Microchip Technology Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товар відсутній
CDLL5312 CDLL5312 Microchip Technology 5849-1n5283ur-1n5314ur-datasheet Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+1665.47 грн
JAN1N3174 JAN1N3174 Microchip Technology 8953-lds-0140-pdf Description: DIODE GP 1KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+101696.27 грн
JAN1N3595-1 JAN1N3595-1 Microchip Technology 5794-1n3595-1-datasheet Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
JAN1N4125-1 JAN1N4125-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
1+324.47 грн
JAN1N4150UR-1 Microchip Technology 5808-1n4150ur-1-datasheet Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/231
товар відсутній
JAN1N4481 JAN1N4481 Microchip Technology 122691-lds-0183-datasheet Description: DIODE ZENER 47V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Qualification: MIL-PRF-19500/406
товар відсутній
JAN1N5283-1 JAN1N5283-1 Microchip Technology 8970-lds-0159-pdf Description: DIODE CUR REG 100V 242UA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 242µA
Voltage - Limiting (Max): 1V
Qualification: MIL-PRF-19500/463
товар відсутній
JAN1N5615US JAN1N5615US Microchip Technology 11062-sd47a-datasheet Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
товар відсутній
JAN1N5711-1 JAN1N5711-1 Microchip Technology 8865-lds-0040-datasheet Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
JAN1N5711UR-1 Microchip Technology 131890-lds-0040-1-datasheet Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
JAN1N5819UR-1 JAN1N5819UR-1 Microchip Technology 131895-lds-0301-1-datasheet Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товар відсутній
JAN1N5822 JAN1N5822 Microchip Technology 131997-lds-0303 Description: DIODE SCHOTTKY 40V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
товар відсутній
JAN1N6490 JAN1N6490 Microchip Technology 122691-lds-0183-datasheet Description: DIODE ZENER 5.1V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Military
Qualification: MIL-PRF-19500/406
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+5024.62 грн
JAN1N750A-1 JAN1N750A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N751A-1 JAN1N751A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/127
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
3+139.51 грн
100+ 124.57 грн
Мінімальне замовлення: 3
JAN1N752A-1 JAN1N752A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 5.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N754A-1 JAN1N754A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N758A-1 JAN1N758A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 10V 500MW DO35
товар відсутній
JAN1N758AUR-1 JAN1N758AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER 10V 500MW DO213AA
товар відсутній
JAN1N759A-1 JAN1N759A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N914 JAN1N914 Microchip Technology 125209-lds-0279-datasheet Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
товар відсутній
JAN1N944B-1 JAN1N944B-1 Microchip Technology 124507-lds-0222-datasheet Description: DIODE ZENER 11.7V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Qualification: MIL-PRF-19500/157
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+12297.04 грн
JAN1N965B-1 JAN1N965B-1 Microchip Technology 125314-lds-0287-datasheet Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: MIL-PRF-19500/117
товар відсутній
1N5523BUR-1 8860-lds-0037-datasheet
1N5523BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2.5 V
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+554.9 грн
1N5532BUR-1 8860-lds-0037-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
товар відсутній
1N5711-1 8865-lds-0040-datasheet
1N5711-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
на замовлення 913 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+456.93 грн
100+ 409.44 грн
1N5712 8865-lds-0040-datasheet
1N5712
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 75MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 75mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 16 V
на замовлення 892 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+407.55 грн
100+ 364.7 грн
1N5822US 131998-lds-0303-1-datasheet
1N5822US
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 186 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+5371.82 грн
100+ 4803.56 грн
1N5907 8921-lds-0095-datasheet
1N5907
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 8.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 120A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 8.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1576.9 грн
1N6316US 11083-lds-0193-1-datasheet
1N6316US
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: B, SQ-MELF
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
товар відсутній
1N6325US 11083-lds-0193-1-datasheet
1N6325US
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: B, SQ-MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 8.5 V
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1096.47 грн
100+ 980.52 грн
1N6335US 11083-lds-0193-1-datasheet
1N6335US
Виробник: Microchip Technology
Description: DIODE ZENER 30V 500MW MELF
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
1N6392 8886-lds-0053-datasheet
1N6392
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 54A DO5
товар відсутній
1N6490US 124793-lds-0183-1-datasheet
1N6490US
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W D5A
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: D-5A
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
на замовлення 94 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+862.12 грн
1N6640US 1N6639US,_1N6640US,_1N6641US.pdf
1N6640US
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+624.65 грн
100+ 558.03 грн
1N6643US 5895-1n6638-42-43us-datasheet
1N6643US
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 300MA D5B
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+543.92 грн
1N6659 8910-lds-0068-datasheet
1N6659
Виробник: Microchip Technology
Description: DIODE ARRAY GP 200V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-254AA
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
1N6663US 11107-sd88a-datasheet
1N6663US
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 500MA D5A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1593.36 грн
1N747A 10928-sa5-7-datasheet
1N747A
Виробник: Microchip Technology
Description: DIODE ZENER 3.6V 500MW DO7
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-7 (DO-204AA)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 362 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+141.86 грн
100+ 126.09 грн
Мінімальне замовлення: 3
1N936A 5912-1n935-938b-datasheet
1N936A
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
на замовлення 41 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+769.64 грн
1N936B 5912-1n935-938b-datasheet
1N936B
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товар відсутній
1N938B 5912-1n935-938b-datasheet
1N938B
Виробник: Microchip Technology
Description: DIODE ZENER 9V 500MW DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
товар відсутній
1N945B 124507-lds-0222-datasheet
1N945B
Виробник: Microchip Technology
Description: DIODE ZENER 11.7V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
товар відсутній
1N965BE3 1N957B%28-1%29-1N992B%28-1%29%2Ce3.pdf
1N965BE3
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
товар відсутній
2N2323S 6024-2n2323-datasheet
2N2323S
Виробник: Microchip Technology
Description: SCR 50V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - On State (It (AV)) (Max): 220 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 50 V
товар відсутній
2N3637UB 8968-lds-0156-datasheet
2N3637UB
Виробник: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+998.5 грн
100+ 892.78 грн
2N6193 6106-2n6193-datasheet
2N6193
Виробник: Microchip Technology
Description: TRANS PNP 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1014.17 грн
100+ 906.82 грн
S3480 8542-coe-23-datasheet
S3480
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 45A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+4051.99 грн
SBR60100
SBR60100
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
товар відсутній
SBR6030L 10320-msc1520-datasheet
SBR6030L
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 30V 60A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
UES1002 11535-wt2-61-datasheet
UES1002
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1315.92 грн
UES1102SM UES1102SM_Web.pdf
UES1102SM
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A A-MELF
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
UES1103 11536-wt2-63-datasheet
UES1103
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1435.83 грн
100+ 1283.16 грн
UES1103SM
UES1103SM
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A-MELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1475.8 грн
100+ 1321.39 грн
UES1104 11537-wt2-65-datasheet
UES1104
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1576.12 грн
100+ 1410.36 грн
UES1106 11537-wt2-65-datasheet
UES1106
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1432.7 грн
100+ 1281.76 грн
UES1303 11538-wt2-68-datasheet
UES1303
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A AXIAL
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
UES706HR2 11292-ues704-6-datasheet
UES706HR2
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 20A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
товар відсутній
UFR3020
UFR3020
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
товар відсутній
CDLL5246BE3
Виробник: Microchip Technology
Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товар відсутній
CDLL5312 5849-1n5283ur-1n5314ur-datasheet
CDLL5312
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1665.47 грн
JAN1N3174 8953-lds-0140-pdf
JAN1N3174
Виробник: Microchip Technology
Description: DIODE GP 1KV 300A DO205AB DO9
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+101696.27 грн
JAN1N3595-1 5794-1n3595-1-datasheet
JAN1N3595-1
Виробник: Microchip Technology
Description: DIODE GEN PURP 125V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Qualification: MIL-PRF-19500/241
товар відсутній
JAN1N4125-1 129734-lds-0245-2-datasheet
JAN1N4125-1
Виробник: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+324.47 грн
JAN1N4150UR-1 5808-1n4150ur-1-datasheet
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: MIL-PRF-19500/231
товар відсутній
JAN1N4481 122691-lds-0183-datasheet
JAN1N4481
Виробник: Microchip Technology
Description: DIODE ZENER 47V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Qualification: MIL-PRF-19500/406
товар відсутній
JAN1N5283-1 8970-lds-0159-pdf
JAN1N5283-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 242UA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 242µA
Voltage - Limiting (Max): 1V
Qualification: MIL-PRF-19500/463
товар відсутній
JAN1N5615US 11062-sd47a-datasheet
JAN1N5615US
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
товар відсутній
JAN1N5711-1 8865-lds-0040-datasheet
JAN1N5711-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
JAN1N5711UR-1 131890-lds-0040-1-datasheet
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
товар відсутній
JAN1N5819UR-1 131895-lds-0301-1-datasheet
JAN1N5819UR-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товар відсутній
JAN1N5822 131997-lds-0303
JAN1N5822
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
товар відсутній
JAN1N6490 122691-lds-0183-datasheet
JAN1N6490
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Military
Qualification: MIL-PRF-19500/406
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+5024.62 грн
JAN1N750A-1 131821-lds-0288-datasheet
JAN1N750A-1
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N751A-1 131821-lds-0288-datasheet
JAN1N751A-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/127
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+139.51 грн
100+ 124.57 грн
Мінімальне замовлення: 3
JAN1N752A-1 131821-lds-0288-datasheet
JAN1N752A-1
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N754A-1 131821-lds-0288-datasheet
JAN1N754A-1
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N758A-1 131821-lds-0288-datasheet
JAN1N758A-1
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
товар відсутній
JAN1N758AUR-1 131822-lds-0288-1-datasheet
JAN1N758AUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AA
товар відсутній
JAN1N759A-1 131821-lds-0288-datasheet
JAN1N759A-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/127
товар відсутній
JAN1N914 125209-lds-0279-datasheet
JAN1N914
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: MIL-PRF-19500/116
товар відсутній
JAN1N944B-1 124507-lds-0222-datasheet
JAN1N944B-1
Виробник: Microchip Technology
Description: DIODE ZENER 11.7V 500MW DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Qualification: MIL-PRF-19500/157
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+12297.04 грн
JAN1N965B-1 125314-lds-0287-datasheet
JAN1N965B-1
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: MIL-PRF-19500/117
товар відсутній
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