Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (278094) > Сторінка 899 з 4635
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
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SBR60100 | Microchip Technology |
Description: DIODE SCHOTTKY 100V 60A DO5 Current - Reverse Leakage @ Vr: 1 mA @ 100 V Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-5 Current - Average Rectified (Io): 60A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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SBR6030L | Microchip Technology |
Description: DIODE SCHOTTKY 30V 60A DO203ABSpeed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Packaging: Bulk Current - Reverse Leakage @ Vr: 5 mA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-203AB (DO-5) Current - Average Rectified (Io): 60A Technology: Schottky |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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UES1002 | Microchip Technology |
Description: DIODE STANDARD 100V 1A AXIALPackaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
на замовлення 95 шт: термін постачання 21-31 дні (днів) |
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UES1102SM | Microchip Technology |
Description: DIODE GEN PURP 100V 2.5A A-MELF |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||
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UES1103 | Microchip Technology |
Description: DIODE STANDARD 150V 2.5AXIALCurrent - Reverse Leakage @ Vr: 2 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: A, Axial Current - Average Rectified (Io): 2.5A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
на замовлення 109 шт: термін постачання 21-31 дні (днів) |
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UES1103SM | Microchip Technology |
Description: DIODE GEN PURP 150V 2.5A A-MELF Current - Reverse Leakage @ Vr: 2 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: A-MELF Current - Average Rectified (Io): 2.5A Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
на замовлення 131 шт: термін постачання 21-31 дні (днів) |
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UES1104 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A AXIALCurrent - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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UES1106 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIALCurrent - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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UES1303 | Microchip Technology |
Description: DIODE GEN PURP 150V 6A AXIAL |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||
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UES706HR2 | Microchip Technology |
Description: DIODE GEN PURP 400V 20A DO4Current - Reverse Leakage @ Vr: 50 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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UFR3020 | Microchip Technology |
Description: DIODE STANDARD 200V 30A DO4Current - Reverse Leakage @ Vr: 15 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-4 Current - Average Rectified (Io): 30A Capacitance @ Vr, F: 140pF @ 10V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
| CDLL5246BE3 | Microchip Technology |
Description: DIODE ZENER 16V DO-213AA Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-213AA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
товару немає в наявності |
Мінімальне замовлення: 371 шт В кошику од. на суму грн. | |||||
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CDLL5312 | Microchip Technology |
Description: DIODE CUR REG 100V 4.29MA 500MWPackaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 4.29mA Voltage - Limiting (Max): 2.6V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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JAN1N3174 | Microchip Technology |
Description: DIODE STD 1000V 300A DO205ABPackaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Current - Reverse Leakage @ Vr: 10 mA @ 1000 V Qualification: MIL-PRF-19500/211 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| JAN1N3595-1 | Microchip Technology |
Description: DIODE STD 125V 150MA DO204AH Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V Grade: Military Qualification: MIL-PRF-19500/241 |
товару немає в наявності |
Мінімальне замовлення: 341 шт В кошику од. на суму грн. | |||||
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JAN1N4125-1 | Microchip Technology |
Description: DIODE ZENER 47V 500MW DO35Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 250 Ohms Voltage - Zener (Nom) (Vz): 47 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
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JAN1N4150UR-1 | Microchip Technology |
Description: DIODE STANDARD 50V 200MA DO213AAQualification: MIL-PRF-19500/231 Grade: Military Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-213AA Current - Average Rectified (Io): 200mA Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: DO-213AA Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 516 шт В кошику од. на суму грн. | ||||
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JAN1N4481 | Microchip Technology |
Description: DIODE ZENER 47V 1.5W DO204ALQualification: MIL-PRF-19500/406 Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Power - Max: 1.5 W Grade: Military Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 50 Ohms Voltage - Zener (Nom) (Vz): 47 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JAN1N5283-1 | Microchip Technology |
Description: DIODE CUR REG 100V 242UA 500MWQualification: MIL-PRF-19500/463 Voltage - Limiting (Max): 1V Regulator Current (Max): 242µA Voltage - Anode - Cathode (Vak)(Max): 100V Power - Max: 500mW Grade: Military Supplier Device Package: DO-7 Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JAN1N5554US | Microchip Technology |
Description: DIODE GEN PURP 1KV 5A D-5BQualification: MIL-PRF-19500/420 Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Voltage - DC Reverse (Vr) (Max): 1000 V Grade: Military Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5B Current - Average Rectified (Io): 5A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, E Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JAN1N5615US | Microchip Technology |
Description: DIODE GEN PURP 200V 1A D-5AQualification: MIL-PRF-19500/429 Grade: Military Current - Reverse Leakage @ Vr: 500 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: D-5A Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JAN1N5711-1 | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO204AHPackaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 70 V Grade: Military Qualification: MIL-PRF-19500/444 |
товару немає в наявності |
Мінімальне замовлення: 133 шт В кошику од. на суму грн. | ||||
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JAN1N5711UR-1 | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO213AAPackaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/444 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JAN1N5819UR-1 | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213ABPackaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Grade: Military Qualification: MIL-PRF-19500/586 |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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JAN1N5822 | Microchip Technology |
Description: DIODE SCHOTTKY 40V 3A B AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Grade: Military Qualification: MIL-PRF-19500/620 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JAN1N6490 | Microchip Technology |
Description: DIODE ZENER 5.1V 1.5W DO41Qualification: MIL-PRF-19500/406 Grade: Military Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Bulk Current - Reverse Leakage @ Vr: 1 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Power - Max: 1.5 W Supplier Device Package: DO-41 Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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JAN1N750A-1 | Microchip Technology |
Description: DIODE ZENER 4.7V 500MW DO204AHQualification: MIL-PRF-19500/127 Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN1N751A-1 | Microchip Technology |
Description: DIODE ZENER 5.1V 500MW DO204AHCurrent - Reverse Leakage @ Vr: 5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 14 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk Qualification: MIL-PRF-19500/127 Grade: Military |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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JAN1N752A-1 | Microchip Technology |
Description: DIODE ZENER 5.6V 500MW DO35Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 8 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk Qualification: MIL-PRF-19500/127 Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V |
товару немає в наявності |
Мінімальне замовлення: 385 шт В кошику од. на суму грн. | ||||
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JAN1N754A-1 | Microchip Technology |
Description: DIODE ZENER 6.8V 500MW DO204AHQualification: MIL-PRF-19500/127 Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 3 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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JAN1N758A-1 | Microchip Technology |
Description: DIODE ZENER 10V 500MW DO35 |
товару немає в наявності |
Мінімальне замовлення: 385 шт В кошику од. на суму грн. | ||||
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JAN1N758AUR-1 | Microchip Technology |
Description: DIODE ZENER 10V 500MW DO213AA |
товару немає в наявності |
Мінімальне замовлення: 176 шт В кошику од. на суму грн. | ||||
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JAN1N759A-1 | Microchip Technology |
Description: DIODE ZENER 12V 500MW DO204AHQualification: MIL-PRF-19500/127 Current - Reverse Leakage @ Vr: 1 µA @ 9 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 385 шт В кошику од. на суму грн. | ||||
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JAN1N914 | Microchip Technology |
Description: DIODE STANDARD 75V 200MA DO204AHPackaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V Grade: Military Qualification: MIL-PRF-19500/116 |
на замовлення 1017 шт: термін постачання 21-31 дні (днів) |
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JAN1N944B-1 | Microchip Technology |
Description: DIODE ZENER 11.7V 500MW DO35Supplier Device Package: DO-35 Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 11.7 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Bulk Qualification: MIL-PRF-19500/157 Current - Reverse Leakage @ Vr: 15 µA @ 8 V Power - Max: 500 mW Grade: Military |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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JAN1N965B-1 | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO204AHPackaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V Grade: Military Qualification: MIL-PRF-19500/117 |
на замовлення 402 шт: термін постачання 21-31 дні (днів) |
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JAN2N1893 | Microchip Technology |
Description: TRANS NPN 80V 0.5A TO-5Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/182 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JAN2N2945A | Microchip Technology |
Description: TRANS PNP 20V 0.1A TO46Packaging: Bulk Qualification: MIL-PRF-19500/382 Power - Max: 400 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 100 mA Grade: Military Supplier Device Package: TO-46 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV Current - Collector Cutoff (Max): 10µA (ICBO) Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
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JAN2N6299 | Microchip Technology |
Description: TRANS PNP DARL 80V 8A TO213AA |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
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JANS1N4109UR-1 | Microchip Technology |
Description: DIODE ZENER 15V 500MW DO213AA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
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JANS1N4467US | Microchip Technology |
Description: DIODE ZENER 12V 1.5W D5AQualification: MIL-PRF-19500/406 Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Power - Max: 1.5 W Grade: Military Supplier Device Package: D-5A Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: SQ-MELF, A Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
| JANS1N4618UR-1 | Microchip Technology |
Description: DIODE ZENER 2.7V 500MW DO213AAQualification: MIL-PRF-19500/435 Current - Reverse Leakage @ Vr: 500 nA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Grade: Military Supplier Device Package: DO-213AA Impedance (Max) (Zzt): 1500 Ohms Voltage - Zener (Nom) (Vz): 2.7 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: DO-213AA Tolerance: ±5% Packaging: Bulk |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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JANS1N4627UR-1 | Microchip Technology |
Description: DIODE ZENER 6.2V 500MW DO213AA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
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JANS1N4962US | Microchip Technology |
Description: DIODE ZENER 15V 5W D5B |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||
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JANS1N5418 | Microchip Technology |
Description: DIODE GEN PURP 400V 3A AXIALQualification: MIL-PRF-19500/411 Grade: Military Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, Axial Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 165pF @ 4V Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
|
JANS1N5819-1 | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO41Current - Reverse Leakage @ Vr: 50 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 45 V Part Status: Active Operating Temperature - Junction: -65°C ~ 125°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 70pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Bulk Qualification: MIL-PRF-19500/586 Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
|
JANS1N6314US | Microchip Technology |
Description: DIODE ZENER 3.9V 5W MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANS1N6318US | Microchip Technology |
Description: DIODE ZENER 5.6V 500MW MELF |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||
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JANS1N6320 | Microchip Technology |
Description: DIODE ZENER 6.8V 500MW DO35Qualification: MIL-PRF-19500/533 Current - Reverse Leakage @ Vr: 2 µA @ 6.8 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Power - Max: 500 mW Grade: Military Supplier Device Package: DO-204AH (DO-35) Impedance (Max) (Zzt): 3 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±5% Packaging: Bulk |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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JANS1N6326US | Microchip Technology |
Description: DIODE ZENER 12V 500MW MELFQualification: MIL-PRF-19500/533 Current - Reverse Leakage @ Vr: 1 µA @ 9 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Power - Max: 500 mW Grade: Military Supplier Device Package: B, SQ-MELF Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 12 V Operating Temperature: -65°C ~ 175°C Mounting Type: Surface Mount Package / Case: SQ-MELF, B Tolerance: ±5% Packaging: Bulk |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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JANS2N2369AUB | Microchip Technology |
Description: TRANS NPN 20V UBPackaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: UB Part Status: Active Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
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JANS2N2907A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO206AAPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: TO-206AA (TO-18) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Qualification: MIL-PRF-19500/291 Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
| JANS2N5339U3 | Microchip Technology |
Description: TRANS NPN 100V 5A SMD5 Qualification: MIL-PRF-19500/560 Grade: Military Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 5 A Part Status: Discontinued at Digi-Key Supplier Device Package: SMD5 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 5-SMD Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JANSR2N2222A | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO-18Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 50nA Qualification: MIL-PRF-19500/255 Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
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JANSR2N2369AUB | Microchip Technology |
Description: TRANS NPN 15V UBPart Status: Active Supplier Device Package: UB DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Current - Collector Cutoff (Max): 400nA Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Bulk Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 15 V Qualification: MIL-PRF-19500/317 Grade: Military |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||
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JANTX1N1184 | Microchip Technology |
Description: DIODE GEN PURP 100V 35A DO5Supplier Device Package: DO-5 Current - Average Rectified (Io): 35A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Packaging: Bulk Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
JANTX1N1190 | Microchip Technology |
Description: DIODE GEN PURP 600V 35A DO5 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
|
JANTX1N1190R | Microchip Technology |
Description: DIODE GEN PURP 600V 35A DO5 |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||
|
JANTX1N1204A | Microchip Technology |
Description: DIODE GEN PURP 400V 12A DO203AA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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JANTX1N3020B-1 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO204ALQualification: MIL-PRF-19500/115 Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Power - Max: 1 W Grade: Military Supplier Device Package: DO-204AL (DO-41) Impedance (Max) (Zzt): 7 Ohms Voltage - Zener (Nom) (Vz): 10 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Tolerance: ±5% Packaging: Bulk |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SBR60100 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 60A DO5
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 60A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Description: DIODE SCHOTTKY 100V 60A DO5
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-5
Current - Average Rectified (Io): 60A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| SBR6030L |
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Виробник: Microchip Technology
Description: DIODE SCHOTTKY 30V 60A DO203AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 60A
Technology: Schottky
Description: DIODE SCHOTTKY 30V 60A DO203AB
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-203AB (DO-5)
Current - Average Rectified (Io): 60A
Technology: Schottky
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UES1002 |
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Виробник: Microchip Technology
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 95 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1233.32 грн |
| UES1102SM |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A A-MELF
Description: DIODE GEN PURP 100V 2.5A A-MELF
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
| UES1103 |
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Виробник: Microchip Technology
Description: DIODE STANDARD 150V 2.5AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE STANDARD 150V 2.5AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1482.80 грн |
| 100+ | 1325.45 грн |
| UES1103SM |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A A-MELF
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: DIODE GEN PURP 150V 2.5A A-MELF
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: A-MELF
Current - Average Rectified (Io): 2.5A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
на замовлення 131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1472.64 грн |
| 100+ | 1318.56 грн |
| UES1104 |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE GEN PURP 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1572.74 грн |
| 100+ | 1407.34 грн |
| UES1106 |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1489.06 грн |
| 100+ | 1332.34 грн |
| UES1303 |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A AXIAL
Description: DIODE GEN PURP 150V 6A AXIAL
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| UES706HR2 |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 20A DO4
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Description: DIODE GEN PURP 400V 20A DO4
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| UFR3020 |
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Виробник: Microchip Technology
Description: DIODE STANDARD 200V 30A DO4
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
Description: DIODE STANDARD 200V 30A DO4
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| CDLL5246BE3 |
Виробник: Microchip Technology
Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
товару немає в наявності
Мінімальне замовлення: 371 шт
В кошику
од. на суму грн.
| CDLL5312 |
![]() |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 324.56 грн |
| 100+ | 290.06 грн |
| JAN1N3174 |
![]() |
Виробник: Microchip Technology
Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 102905.42 грн |
| JAN1N3595-1 |
Виробник: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
товару немає в наявності
Мінімальне замовлення: 341 шт
В кошику
од. на суму грн.
| JAN1N4125-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 47V 500MW DO35
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 323.78 грн |
| JAN1N4150UR-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE STANDARD 50V 200MA DO213AA
Qualification: MIL-PRF-19500/231
Grade: Military
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
Description: DIODE STANDARD 50V 200MA DO213AA
Qualification: MIL-PRF-19500/231
Grade: Military
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 516 шт
В кошику
од. на суму грн.
| JAN1N4481 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 47V 1.5W DO204AL
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 47V 1.5W DO204AL
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN1N5283-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 242UA 500MW
Qualification: MIL-PRF-19500/463
Voltage - Limiting (Max): 1V
Regulator Current (Max): 242µA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 500mW
Grade: Military
Supplier Device Package: DO-7
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Packaging: Bulk
Description: DIODE CUR REG 100V 242UA 500MW
Qualification: MIL-PRF-19500/463
Voltage - Limiting (Max): 1V
Regulator Current (Max): 242µA
Voltage - Anode - Cathode (Vak)(Max): 100V
Power - Max: 500mW
Grade: Military
Supplier Device Package: DO-7
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN1N5554US |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 5A D-5B
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Description: DIODE GEN PURP 1KV 5A D-5B
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN1N5615US |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: DIODE GEN PURP 200V 1A D-5A
Qualification: MIL-PRF-19500/429
Grade: Military
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN1N5711-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
товару немає в наявності
Мінімальне замовлення: 133 шт
В кошику
од. на суму грн.
| JAN1N5711UR-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN1N5819UR-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 545.10 грн |
| 100+ | 487.15 грн |
| JAN1N5822 |
![]() |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN1N6490 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W DO41
Qualification: MIL-PRF-19500/406
Grade: Military
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Description: DIODE ZENER 5.1V 1.5W DO41
Qualification: MIL-PRF-19500/406
Grade: Military
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Supplier Device Package: DO-41
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5013.84 грн |
| JAN1N750A-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO204AH
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 4.7V 500MW DO204AH
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N751A-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/127
Grade: Military
Description: DIODE ZENER 5.1V 500MW DO204AH
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 14 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/127
Grade: Military
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.82 грн |
| 100+ | 115.78 грн |
| JAN1N752A-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Description: DIODE ZENER 5.6V 500MW DO35
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
товару немає в наявності
Мінімальне замовлення: 385 шт
В кошику
од. на суму грн.
| JAN1N754A-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO204AH
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 6.8V 500MW DO204AH
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 129.82 грн |
| JAN1N758A-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
Description: DIODE ZENER 10V 500MW DO35
товару немає в наявності
Мінімальне замовлення: 385 шт
В кошику
од. на суму грн.
| JAN1N758AUR-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AA
Description: DIODE ZENER 10V 500MW DO213AA
товару немає в наявності
Мінімальне замовлення: 176 шт
В кошику
од. на суму грн.
| JAN1N759A-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 12V 500MW DO204AH
Qualification: MIL-PRF-19500/127
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 385 шт
В кошику
од. на суму грн.
| JAN1N914 |
![]() |
Виробник: Microchip Technology
Description: DIODE STANDARD 75V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Grade: Military
Qualification: MIL-PRF-19500/116
Description: DIODE STANDARD 75V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Grade: Military
Qualification: MIL-PRF-19500/116
на замовлення 1017 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.58 грн |
| 100+ | 39.68 грн |
| JAN1N944B-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 11.7V 500MW DO35
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Bulk
Qualification: MIL-PRF-19500/157
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Power - Max: 500 mW
Grade: Military
Description: DIODE ZENER 11.7V 500MW DO35
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 11.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Bulk
Qualification: MIL-PRF-19500/157
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Power - Max: 500 mW
Grade: Military
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12270.66 грн |
| JAN1N965B-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Grade: Military
Qualification: MIL-PRF-19500/117
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Grade: Military
Qualification: MIL-PRF-19500/117
на замовлення 402 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 118.09 грн |
| 100+ | 105.39 грн |
| JAN2N1893 |
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Виробник: Microchip Technology
Description: TRANS NPN 80V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/182
Description: TRANS NPN 80V 0.5A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/182
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JAN2N2945A |
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Виробник: Microchip Technology
Description: TRANS PNP 20V 0.1A TO46
Packaging: Bulk
Qualification: MIL-PRF-19500/382
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 100 mA
Grade: Military
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Description: TRANS PNP 20V 0.1A TO46
Packaging: Bulk
Qualification: MIL-PRF-19500/382
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 100 mA
Grade: Military
Supplier Device Package: TO-46
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JAN2N6299 |
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Виробник: Microchip Technology
Description: TRANS PNP DARL 80V 8A TO213AA
Description: TRANS PNP DARL 80V 8A TO213AA
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANS1N4109UR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AA
Description: DIODE ZENER 15V 500MW DO213AA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS1N4467US |
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Виробник: Microchip Technology
Description: DIODE ZENER 12V 1.5W D5A
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: D-5A
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 12V 1.5W D5A
Qualification: MIL-PRF-19500/406
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 1.5 W
Grade: Military
Supplier Device Package: D-5A
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS1N4618UR-1 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 2.7V 500MW DO213AA
Qualification: MIL-PRF-19500/435
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 2.7V 500MW DO213AA
Qualification: MIL-PRF-19500/435
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1500 Ohms
Voltage - Zener (Nom) (Vz): 2.7 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8620.75 грн |
| JANS1N4627UR-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Description: DIODE ZENER 6.2V 500MW DO213AA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS1N4962US |
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Виробник: Microchip Technology
Description: DIODE ZENER 15V 5W D5B
Description: DIODE ZENER 15V 5W D5B
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| JANS1N5418 |
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Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 165pF @ 4V
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Description: DIODE GEN PURP 400V 3A AXIAL
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 165pF @ 4V
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS1N5819-1 |
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Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO41
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/586
Grade: Military
Description: DIODE SCHOTTKY 45V 1A DO41
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/586
Grade: Military
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS1N6314US |
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Виробник: Microchip Technology
Description: DIODE ZENER 3.9V 5W MELF
Description: DIODE ZENER 3.9V 5W MELF
товару немає в наявності
В кошику
од. на суму грн.
| JANS1N6318US |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 500MW MELF
Description: DIODE ZENER 5.6V 500MW MELF
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS1N6320 |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO35
Qualification: MIL-PRF-19500/533
Current - Reverse Leakage @ Vr: 2 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 6.8V 500MW DO35
Qualification: MIL-PRF-19500/533
Current - Reverse Leakage @ Vr: 2 µA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 3 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17561.36 грн |
| JANS1N6326US |
![]() |
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW MELF
Qualification: MIL-PRF-19500/533
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Grade: Military
Supplier Device Package: B, SQ-MELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 12V 500MW MELF
Qualification: MIL-PRF-19500/533
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Power - Max: 500 mW
Grade: Military
Supplier Device Package: B, SQ-MELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Tolerance: ±5%
Packaging: Bulk
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9056.36 грн |
| JANS2N2369AUB |
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Виробник: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS2N2907A |
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Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO206AA
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-206AA (TO-18)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/291
Grade: Military
Description: TRANS PNP 60V 0.6A TO206AA
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-206AA (TO-18)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/291
Grade: Military
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANS2N5339U3 |
Виробник: Microchip Technology
Description: TRANS NPN 100V 5A SMD5
Qualification: MIL-PRF-19500/560
Grade: Military
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: SMD5
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 5-SMD
Packaging: Bulk
Description: TRANS NPN 100V 5A SMD5
Qualification: MIL-PRF-19500/560
Grade: Military
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 5 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: SMD5
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 5-SMD
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| JANSR2N2222A |
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Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Qualification: MIL-PRF-19500/255
Grade: Military
Description: TRANS NPN 50V 0.8A TO-18
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Qualification: MIL-PRF-19500/255
Grade: Military
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANSR2N2369AUB |
![]() |
Виробник: Microchip Technology
Description: TRANS NPN 15V UB
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Qualification: MIL-PRF-19500/317
Grade: Military
Description: TRANS NPN 15V UB
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Qualification: MIL-PRF-19500/317
Grade: Military
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| JANTX1N1184 |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 35A DO5
Supplier Device Package: DO-5
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Description: DIODE GEN PURP 100V 35A DO5
Supplier Device Package: DO-5
Current - Average Rectified (Io): 35A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Packaging: Bulk
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N1190 |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 35A DO5
Description: DIODE GEN PURP 600V 35A DO5
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANTX1N1190R |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 35A DO5
Description: DIODE GEN PURP 600V 35A DO5
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.
| JANTX1N1204A |
![]() |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 12A DO203AA
Description: DIODE GEN PURP 400V 12A DO203AA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4998.98 грн |
| JANTX1N3020B-1 |
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Виробник: Microchip Technology
Description: DIODE ZENER 10V 1W DO204AL
Qualification: MIL-PRF-19500/115
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Military
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
Description: DIODE ZENER 10V 1W DO204AL
Qualification: MIL-PRF-19500/115
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1 W
Grade: Military
Supplier Device Package: DO-204AL (DO-41)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Tolerance: ±5%
Packaging: Bulk
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.






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