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APT5020SVRG APT5020SVRG Microsemi Corporation Description: MOSFET N-CH 500V 26A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
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APT5014SLLG/TR APT5014SLLG/TR Microsemi Corporation APT5014xLL%28G%29.pdf Description: MOSFET N-CH 500V 35A TO247
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
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P6KE300CAE3/TR13 P6KE300CAE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 256VWM 414VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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APTGV25H120T3G Microsemi Corporation Description: IGBT MODULE 1200V 40A 156W SP3
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1N5375C/TR8 1N5375C/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ae3/TR8 1N5375Ae3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375e3/TR8 1N5375e3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ce3/TR12 1N5375Ce3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375/TR12 1N5375/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ce3/TR8 1N5375Ce3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375C/TR12 1N5375C/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375e3/TR12 1N5375e3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ae3/TR12 1N5375Ae3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ae3/TR13 1N5375Ae3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375e3/TR13 1N5375e3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375A/TR8 1N5375A/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375/TR8 1N5375/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375A/TR12 1N5375A/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ce3/TR13 1N5375Ce3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5384A/TR12 1N5384A/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384B/TR12 1N5384B/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384AE3/TR8 1N5384AE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384B/TR8 1N5384B/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384E3/TR8 1N5384E3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384C/TR8 1N5384C/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384BE3/TR12 1N5384BE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384C/TR12 1N5384C/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384/TR12 1N5384/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
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1N5384CE3/TR13 1N5384CE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
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1N5384BE3/TR8 1N5384BE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
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1N5384BE3/TR13 1N5384BE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
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1N5384CE3/TR12 1N5384CE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
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1N5384AE3/TR12 1N5384AE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
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1N5384A/TR8 1N5384A/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
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1N5384AE3/TR13 1N5384AE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384E3/TR12 1N5384E3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384E3/TR13 1N5384E3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384/TR8 1N5384/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384CE3/TR8 1N5384CE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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SM12e3/TR7 Microsemi Corporation sm03-sM36,E3.pdf Description: TVS DIODE 12VWM 19VC SOT23
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LX1672-03CPW LX1672-03CPW Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 28TSSOP
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LX1672-05CPW LX1672-05CPW Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 28TSSOP
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LX1672-03CLQ Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 38MLPQ
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LX1672-06CLQ Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 38MLPQ
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1N5918CG 1N5918CG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5918DG 1N5918DG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5918AG 1N5918AG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5918BG 1N5918BG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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WDS3-UFE4-12-DC Microsemi Corporation download_p.pl?res_id=211621&filename=2110545_UFE412_PB_126931.pdf Description: UFE4 BOARD
Packaging: Bulk
Package / Case: 676-BGA, FCBGA
Mounting Type: Surface Mount
Interface: Asynchronous Host Interface
Applications: Network Processor
Core Processor: UFE4
Supplier Device Package: 676-FCBGA (27x27)
Part Status: Active
DigiKey Programmable: Not Verified
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JAN2N4957UB Microsemi Corporation 132607-lds-0313-1-datasheet Description: RF TRANS PNP 30V 30MA UB
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P6KE82AE3/TR13 P6KE82AE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 70.1VWM 113VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MRF581 MRF581 Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581G MRF581G Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581A MRF581A Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 15V 5GHZ MICRO-X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
Part Status: Obsolete
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MRF581AG MRF581AG Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 15V 5GHZ MACRO X
Packaging: Bulk
Package / Case: Macro-X
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Macro-X
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MRF5812GR2 MRF5812GR2 Microsemi Corporation MRF5812%28G%29R1%2CR2.pdf Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812GR2 MRF5812GR2 Microsemi Corporation MRF5812%28G%29R1%2CR2.pdf Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812G MRF5812G Microsemi Corporation 9536-mrf5812r1r2reva-datasheet Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812 MRF5812 Microsemi Corporation 9536-mrf5812r1r2reva-datasheet Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812R1 MRF5812R1 Microsemi Corporation 9536-mrf5812r1r2reva-datasheet Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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APT5020SVRG
APT5020SVRG
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 26A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
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APT5014SLLG/TR APT5014xLL%28G%29.pdf
APT5014SLLG/TR
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 35A TO247
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
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P6KE300CAE3/TR13 rf01007_rb.pdf
P6KE300CAE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 256VWM 414VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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APTGV25H120T3G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 156W SP3
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1N5375C/TR8 1N5333B-88B.pdf
1N5375C/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ae3/TR8 1N5333B-88B.pdf
1N5375Ae3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375e3/TR8 1N5333B-88B.pdf
1N5375e3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ce3/TR12 1N5333B-88B.pdf
1N5375Ce3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375/TR12 1N5333B-88B.pdf
1N5375/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ce3/TR8 1N5333B-88B.pdf
1N5375Ce3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375C/TR12 1N5333B-88B.pdf
1N5375C/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375e3/TR12 1N5333B-88B.pdf
1N5375e3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
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1N5375Ae3/TR12 1N5333B-88B.pdf
1N5375Ae3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5375Ae3/TR13 1N5333B-88B.pdf
1N5375Ae3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5375e3/TR13 1N5333B-88B.pdf
1N5375e3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5375A/TR8 1N5333B-88B.pdf
1N5375A/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5375/TR8 1N5333B-88B.pdf
1N5375/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5375A/TR12 1N5333B-88B.pdf
1N5375A/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5375Ce3/TR13 1N5333B-88B.pdf
1N5375Ce3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384A/TR12 1N5333B-88B.pdf
1N5384A/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384B/TR12 1N5333B-88B.pdf
1N5384B/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384AE3/TR8 1N5333B-88B.pdf
1N5384AE3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384B/TR8 1N5333B-88B.pdf
1N5384B/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384E3/TR8 1N5333B-88B.pdf
1N5384E3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384C/TR8 1N5333B-88B.pdf
1N5384C/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384BE3/TR12 1N5333B-88B.pdf
1N5384BE3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384C/TR12 1N5333B-88B.pdf
1N5384C/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384/TR12 1N5333B-88B.pdf
1N5384/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384CE3/TR13 1N5333B-88B.pdf
1N5384CE3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384BE3/TR8 1N5333B-88B.pdf
1N5384BE3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384BE3/TR13 1N5333B-88B.pdf
1N5384BE3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384CE3/TR12 1N5333B-88B.pdf
1N5384CE3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384AE3/TR12 1N5333B-88B.pdf
1N5384AE3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384A/TR8 1N5333B-88B.pdf
1N5384A/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384AE3/TR13 1N5333B-88B.pdf
1N5384AE3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384E3/TR12 1N5333B-88B.pdf
1N5384E3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384E3/TR13 1N5333B-88B.pdf
1N5384E3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384/TR8 1N5333B-88B.pdf
1N5384/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5384CE3/TR8 1N5333B-88B.pdf
1N5384CE3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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SM12e3/TR7 sm03-sM36,E3.pdf
Виробник: Microsemi Corporation
Description: TVS DIODE 12VWM 19VC SOT23
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LX1672-03CPW 9003-lx1672-pdf
LX1672-03CPW
Виробник: Microsemi Corporation
Description: IC REG CTRLR BUCK 28TSSOP
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LX1672-05CPW 9003-lx1672-pdf
LX1672-05CPW
Виробник: Microsemi Corporation
Description: IC REG CTRLR BUCK 28TSSOP
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LX1672-03CLQ 9003-lx1672-pdf
Виробник: Microsemi Corporation
Description: IC REG CTRLR BUCK 38MLPQ
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LX1672-06CLQ 9003-lx1672-pdf
Виробник: Microsemi Corporation
Description: IC REG CTRLR BUCK 38MLPQ
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1N5918CG 1N5913BG_1N5956BG.pdf
1N5918CG
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
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1N5918DG 1N5913BG_1N5956BG.pdf
1N5918DG
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5918AG 1N5913BG_1N5956BG.pdf
1N5918AG
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
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1N5918BG 1N5913BG_1N5956BG.pdf
1N5918BG
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику  од. на суму  грн.
WDS3-UFE4-12-DC download_p.pl?res_id=211621&filename=2110545_UFE412_PB_126931.pdf
Виробник: Microsemi Corporation
Description: UFE4 BOARD
Packaging: Bulk
Package / Case: 676-BGA, FCBGA
Mounting Type: Surface Mount
Interface: Asynchronous Host Interface
Applications: Network Processor
Core Processor: UFE4
Supplier Device Package: 676-FCBGA (27x27)
Part Status: Active
DigiKey Programmable: Not Verified
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JAN2N4957UB 132607-lds-0313-1-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS PNP 30V 30MA UB
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P6KE82AE3/TR13 rf01007_rb.pdf
P6KE82AE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 70.1VWM 113VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MRF581 11675-mrf581-mrf581a-reva-datasheet
MRF581
Виробник: Microsemi Corporation
Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581G 11675-mrf581-mrf581a-reva-datasheet
MRF581G
Виробник: Microsemi Corporation
Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581A 11675-mrf581-mrf581a-reva-datasheet
MRF581A
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ MICRO-X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
Part Status: Obsolete
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MRF581AG 11675-mrf581-mrf581a-reva-datasheet
MRF581AG
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ MACRO X
Packaging: Bulk
Package / Case: Macro-X
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Macro-X
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MRF5812GR2 MRF5812%28G%29R1%2CR2.pdf
MRF5812GR2
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812GR2 MRF5812%28G%29R1%2CR2.pdf
MRF5812GR2
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812G 9536-mrf5812r1r2reva-datasheet
MRF5812G
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812 9536-mrf5812r1r2reva-datasheet
MRF5812
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812R1 9536-mrf5812r1r2reva-datasheet
MRF5812R1
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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