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APT20N60BC3G APT20N60BC3G Microsemi Corporation APT20N60xC3G.pdf Description: MOSFET N-CH 600V 20.7A TO247-3
товар відсутній
APT20N60SC3G APT20N60SC3G Microsemi Corporation APT20N60xC3G.pdf Description: MOSFET N-CH 600V 20.7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
товар відсутній
MSD130-08 MSD130-08 Microsemi Corporation 10534-msd130-rev1-datasheet Description: BRIDGE RECT 3PHASE 800V 130A M3
товар відсутній
MSD130-12 MSD130-12 Microsemi Corporation 10534-msd130-rev1-datasheet Description: BRIDGE RECT 3PHASE 1.2KV 130A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
товар відсутній
MSD130-16 MSD130-16 Microsemi Corporation 10534-msd130-rev1-datasheet Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
товар відсутній
MSD130-18 Microsemi Corporation 10534-msd130-rev1-datasheet Description: BRIDGE RECT 3PHASE 1.8KV 130A
товар відсутній
SD1309-01H Microsemi Corporation Description: RF POWER TRANSISTOR
товар відсутній
SD1330-05C Microsemi Corporation Description: TRANSISTOR
товар відсутній
SD1330-05H Microsemi Corporation Description: RF POWER TRANSISTOR
товар відсутній
SD1330-06H Microsemi Corporation Description: RF POWER TRANSISTOR
товар відсутній
SD1332-05C Microsemi Corporation Description: RF TRANS NPN 15V 5.5GHZ M150
товар відсутній
SD1332-05H Microsemi Corporation Description: RF TRANS NPN 15V 5.5GHZ M150
товар відсутній
SD1372-01H Microsemi Corporation Description: RF POWER TRANSISTOR
товар відсутній
SD1372-03H Microsemi Corporation Description: RF POWER TRANSISTOR
товар відсутній
SD1372-06H Microsemi Corporation Description: RF POWER TRANSISTOR
товар відсутній
JAN1N6116US Microsemi Corporation 127892-lds-0277-1-datasheet Description: TVS DIODE 20.6VWM 39.27V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.73A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.42V
Voltage - Clamping (Max) @ Ipp: 39.27V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
APTML102UM09R004T3AG Microsemi Corporation doc_details Description: MOSFET 2N-CH 100V 154A SP3
товар відсутній
APTML10UM09R004T1AG Microsemi Corporation doc_details Description: MOSFET N-CH 100V 154A SP1
товар відсутній
SMBG4740C/TR13 Microsemi Corporation 11031-sd19a-datasheet Description: DIODE ZENER 10V 2W SMBG
товар відсутній
SMBG4740CE3/TR13 Microsemi Corporation 11031-sd19a-datasheet Description: DIODE ZENER 10V 2W SMBG
товар відсутній
SMBJ4740C/TR13 SMBJ4740C/TR13 Microsemi Corporation 11031-sd19a-datasheet Description: DIODE ZENER 10V 2W SMBJ
товар відсутній
SMBJ4740Ce3/TR13 SMBJ4740Ce3/TR13 Microsemi Corporation 11031-sd19a-datasheet Description: DIODE ZENER 10V 2W SMBJ
товар відсутній
VRF2933FL VRF2933FL Microsemi Corporation Description: MOSFET RF N-CH 170V 30MHZ T2
Packaging: Tube
Package / Case: M177
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 22dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
товар відсутній
P6KE200CAE3/TR13 P6KE200CAE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
1N4755A G 1N4755A G Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 43V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
товар відсутній
APTML1002U60R020T3AG Microsemi Corporation doc_details Description: MOSFET 2N-CH 1000V 20A SP3
товар відсутній
SK110E3/TR13 Microsemi Corporation SK12 thru SK110.pdf Description: DIODE SCHOTTKY 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
1N332RB Microsemi Corporation 77269-lds-0077-datasheet Description: DIODE ZENER 51V 50W DO5
товар відсутній
MT8888CPR1 Microsemi Corporation 127044-mt8888c-datasheet-sep2005 Description: IC TELECOM INTERFACE 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: DTMF Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 7mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
товар відсутній
MT8889CPR Microsemi Corporation 127045-mt8889-datashet-july08-datasheet Description: IC TELECOM INTERFACE 28PLCC
товар відсутній
ZL49031DCF1 Microsemi Corporation 127105-zl4901xx-datasheet-feb2007 Description: IC TELECOM INTERFACE 18SOIC
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: DTMF Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 3mA
Supplier Device Package: 18-SOIC
Part Status: Obsolete
Number of Circuits: 1
товар відсутній
Core429-AN Core429-AN Microsemi Corporation Description: IP MODULE CORE429
товар відсутній
Core429-AR Core429-AR Microsemi Corporation Description: IP MODULE CORE429
товар відсутній
1N5230BDO35 1N5230BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
товар відсутній
TL431CDM TL431CDM Microsemi Corporation TL431%28A%2CB%29.pdf Description: IC VREF SHUNT ADJ 2% 8SOIC
Packaging: Tube
Tolerance: ±2%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 30ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
ZL50075GAC2 Microsemi Corporation 127189-zl50075-datasheet-jan2006 Description: IC TELECOM INTERFACE 324BGA
товар відсутній
ZL50117GAG Microsemi Corporation 127191-zl50115-120-datasheet-oct09 Description: IC TELECOM INTERFACE 324BGA
товар відсутній
ZL50119GAG Microsemi Corporation 127191-zl50115-120-datasheet-oct09 Description: IC TELECOM INTERFACE 324BGA
товар відсутній
1N3477 1N3477 Microsemi Corporation Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
товар відсутній
1N3477A 1N3477A Microsemi Corporation Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
товар відсутній
1N5221BDO35 1N5221BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 2.4V 500MW DO35
товар відсутній
1N5229A (DO-35) 1N5229A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+45.3 грн
Мінімальне замовлення: 10000
1N5229A (DO-35) 1N5229A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 11994 шт:
термін постачання 21-31 дні (днів)
3+107.74 грн
10+ 86.37 грн
25+ 83.52 грн
100+ 64.49 грн
Мінімальне замовлення: 3
1N5232A (DO-35)TR 1N5232A (DO-35)TR Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
товар відсутній
1N5232A (DO-35)TR 1N5232A (DO-35)TR Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 4296 шт:
термін постачання 21-31 дні (днів)
3+127.72 грн
10+ 102.03 грн
25+ 98.72 грн
100+ 76.22 грн
Мінімальне замовлення: 3
1N5233BDO35 1N5233BDO35 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
товар відсутній
1N5234BDO35 1N5234BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
товар відсутній
1N5235BDO35 1N5235BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
товар відсутній
1N5236BDO35 1N5236BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
1N5239BDO35 1N5239BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
товар відсутній
1N5245BDO35 1N5245BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
1N5251BDO35 1N5251BDO35 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
1N5262BDO35 1N5262BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 51V 500MW DO35
товар відсутній
1N5263BDO35 1N5263BDO35 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 56V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
1N5264BDO35 1N5264BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 60V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
на замовлення 1935 шт:
термін постачання 21-31 дні (днів)
2+168.39 грн
Мінімальне замовлення: 2
1N5265BDO35 1N5265BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 62V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
на замовлення 8724 шт:
термін постачання 21-31 дні (днів)
2+189.08 грн
Мінімальне замовлення: 2
1N5266BDO35 1N5266BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 68V 500MW DO35
товар відсутній
1N5267BDO35 1N5267BDO35 Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 75V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
1N5268BDO35 1N5268BDO35 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 82V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
товар відсутній
1N5270BDO35 1N5270BDO35 Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 91V 500MW DO35
товар відсутній
APT20N60BC3G APT20N60xC3G.pdf
APT20N60BC3G
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 20.7A TO247-3
товар відсутній
APT20N60SC3G APT20N60xC3G.pdf
APT20N60SC3G
Виробник: Microsemi Corporation
Description: MOSFET N-CH 600V 20.7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
товар відсутній
MSD130-08 10534-msd130-rev1-datasheet
MSD130-08
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 130A M3
товар відсутній
MSD130-12 10534-msd130-rev1-datasheet
MSD130-12
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 130A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
товар відсутній
MSD130-16 10534-msd130-rev1-datasheet
MSD130-16
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
товар відсутній
MSD130-18 10534-msd130-rev1-datasheet
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 130A
товар відсутній
SD1309-01H
Виробник: Microsemi Corporation
Description: RF POWER TRANSISTOR
товар відсутній
SD1330-05C
Виробник: Microsemi Corporation
Description: TRANSISTOR
товар відсутній
SD1330-05H
Виробник: Microsemi Corporation
Description: RF POWER TRANSISTOR
товар відсутній
SD1330-06H
Виробник: Microsemi Corporation
Description: RF POWER TRANSISTOR
товар відсутній
SD1332-05C
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5.5GHZ M150
товар відсутній
SD1332-05H
Виробник: Microsemi Corporation
Description: RF TRANS NPN 15V 5.5GHZ M150
товар відсутній
SD1372-01H
Виробник: Microsemi Corporation
Description: RF POWER TRANSISTOR
товар відсутній
SD1372-03H
Виробник: Microsemi Corporation
Description: RF POWER TRANSISTOR
товар відсутній
SD1372-06H
Виробник: Microsemi Corporation
Description: RF POWER TRANSISTOR
товар відсутній
JAN1N6116US 127892-lds-0277-1-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 20.6VWM 39.27V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.73A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.42V
Voltage - Clamping (Max) @ Ipp: 39.27V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
APTML102UM09R004T3AG doc_details
Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 100V 154A SP3
товар відсутній
APTML10UM09R004T1AG doc_details
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 154A SP1
товар відсутній
SMBG4740C/TR13 11031-sd19a-datasheet
Виробник: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBG
товар відсутній
SMBG4740CE3/TR13 11031-sd19a-datasheet
Виробник: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBG
товар відсутній
SMBJ4740C/TR13 11031-sd19a-datasheet
SMBJ4740C/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBJ
товар відсутній
SMBJ4740Ce3/TR13 11031-sd19a-datasheet
SMBJ4740Ce3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBJ
товар відсутній
VRF2933FL
VRF2933FL
Виробник: Microsemi Corporation
Description: MOSFET RF N-CH 170V 30MHZ T2
Packaging: Tube
Package / Case: M177
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 22dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
товар відсутній
P6KE200CAE3/TR13 rf01007_rb.pdf
P6KE200CAE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
1N4755A G 10912-sa5-35-datasheet
1N4755A G
Виробник: Microsemi Corporation
Description: DIODE ZENER 43V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
товар відсутній
APTML1002U60R020T3AG doc_details
Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 20A SP3
товар відсутній
SK110E3/TR13 SK12 thru SK110.pdf
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
1N332RB 77269-lds-0077-datasheet
Виробник: Microsemi Corporation
Description: DIODE ZENER 51V 50W DO5
товар відсутній
MT8888CPR1 127044-mt8888c-datasheet-sep2005
Виробник: Microsemi Corporation
Description: IC TELECOM INTERFACE 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: DTMF Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 7mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
товар відсутній
MT8889CPR 127045-mt8889-datashet-july08-datasheet
Виробник: Microsemi Corporation
Description: IC TELECOM INTERFACE 28PLCC
товар відсутній
ZL49031DCF1 127105-zl4901xx-datasheet-feb2007
Виробник: Microsemi Corporation
Description: IC TELECOM INTERFACE 18SOIC
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: DTMF Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 3mA
Supplier Device Package: 18-SOIC
Part Status: Obsolete
Number of Circuits: 1
товар відсутній
Core429-AN
Core429-AN
Виробник: Microsemi Corporation
Description: IP MODULE CORE429
товар відсутній
Core429-AR
Core429-AR
Виробник: Microsemi Corporation
Description: IP MODULE CORE429
товар відсутній
1N5230BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5230BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
товар відсутній
TL431CDM TL431%28A%2CB%29.pdf
TL431CDM
Виробник: Microsemi Corporation
Description: IC VREF SHUNT ADJ 2% 8SOIC
Packaging: Tube
Tolerance: ±2%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 30ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
товар відсутній
ZL50075GAC2 127189-zl50075-datasheet-jan2006
Виробник: Microsemi Corporation
Description: IC TELECOM INTERFACE 324BGA
товар відсутній
ZL50117GAG 127191-zl50115-120-datasheet-oct09
Виробник: Microsemi Corporation
Description: IC TELECOM INTERFACE 324BGA
товар відсутній
ZL50119GAG 127191-zl50115-120-datasheet-oct09
Виробник: Microsemi Corporation
Description: IC TELECOM INTERFACE 324BGA
товар відсутній
1N3477
1N3477
Виробник: Microsemi Corporation
Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
товар відсутній
1N3477A
1N3477A
Виробник: Microsemi Corporation
Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
товар відсутній
1N5221BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5221BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 2.4V 500MW DO35
товар відсутній
1N5229A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5229A (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10000+45.3 грн
Мінімальне замовлення: 10000
1N5229A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5229A (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
на замовлення 11994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+107.74 грн
10+ 86.37 грн
25+ 83.52 грн
100+ 64.49 грн
Мінімальне замовлення: 3
1N5232A (DO-35)TR 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5232A (DO-35)TR
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
товар відсутній
1N5232A (DO-35)TR 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5232A (DO-35)TR
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 4296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+127.72 грн
10+ 102.03 грн
25+ 98.72 грн
100+ 76.22 грн
Мінімальне замовлення: 3
1N5233BDO35 1N5221 - 1N5281B, e3 DO-35.pdf
1N5233BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 6V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
товар відсутній
1N5234BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5234BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
товар відсутній
1N5235BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5235BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 6.8V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
товар відсутній
1N5236BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5236BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
1N5239BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5239BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
товар відсутній
1N5245BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5245BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
товар відсутній
1N5251BDO35 1N5221 - 1N5281B, e3 DO-35.pdf
1N5251BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 22V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 17 V
товар відсутній
1N5262BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5262BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 51V 500MW DO35
товар відсутній
1N5263BDO35 1N5221 - 1N5281B, e3 DO-35.pdf
1N5263BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 56V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
товар відсутній
1N5264BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5264BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 60V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 60 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 46 V
на замовлення 1935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+168.39 грн
Мінімальне замовлення: 2
1N5265BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5265BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 62V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 185 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
на замовлення 8724 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+189.08 грн
Мінімальне замовлення: 2
1N5266BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5266BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 68V 500MW DO35
товар відсутній
1N5267BDO35 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5267BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 75V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
товар відсутній
1N5268BDO35 1N5221 - 1N5281B, e3 DO-35.pdf
1N5268BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 82V 500MW DO35
Packaging: Bag
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 330 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 62 V
товар відсутній
1N5270BDO35 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5270BDO35
Виробник: Microsemi Corporation
Description: DIODE ZENER 91V 500MW DO35
товар відсутній
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