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SL24e3/TR7 Microsemi Corporation Description: TVS DIODE SOT23
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MPLAD6.5KP100CA MPLAD6.5KP100CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 100VWM 162VC PLAD
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MPLAD6.5KP100CAe3 MPLAD6.5KP100CAe3 Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 100VWM 162VC PLAD
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MAP5KE33Ae3 MAP5KE33Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MXLP5KE33A MXLP5KE33A Microsemi Corporation Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXP5KE33CAe3 MXP5KE33CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MP5KE33A MP5KE33A Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXP5KE33A MXP5KE33A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MXLP5KE33CA MXLP5KE33CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MAP5KE33CAe3 MAP5KE33CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXLP5KE33CAe3 MXLP5KE33CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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1090MP Microsemi Corporation 5663-1090mp-datasheet-rev-b-pdf Description: RF TRANS NPN 65V 1.15GHZ 55FW-1
Packaging: Bulk
Package / Case: 55FW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.08dB ~ 8.5dB
Power - Max: 250W
Current - Collector (Ic) (Max): 6.5A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55FW-1
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MPT-12C Microsemi Corporation 129294-lds-0292-datasheet Description: TVS DIODE 12VWM 17.1VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 17.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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JANTX1N4982CUS JANTX1N4982CUS Microsemi Corporation 11059-sd44a-datasheet Description: DIODE ZENER 100V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 76 V
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SG137AIG-883B SG137AIG-883B Microsemi Corporation 135123-sg137-sg137a-datasheet Description: IC REG LIN NEG ADJ 1.5A TO257
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JANSR2N7381 Microsemi Corporation 8937-lds-0124-datasheet Description: MOSFET N-CH 200V 9.4A TO257
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JANSR2N7380 Microsemi Corporation 8936-lds-0123-datasheet Description: MOSFET N-CH 100V 14.4A TO257
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APT5012JN APT5012JN Microsemi Corporation APT5010JN,_APT5012JN_Web.pdf Description: MOSFET N-CH 500V 43A ISOTOP
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MXP5KE33Ae3 MXP5KE33Ae3 Microsemi Corporation Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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1N4118 (DO35) 1N4118 (DO35) Microsemi Corporation 129734-lds-0245-2-datasheet Description: DIODE ZENER 27V 400MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 20.45 V
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APTGT150DA60TG Microsemi Corporation APTGT150DA60TG.pdf Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DU60TG Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=7735 Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150H170G Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=7737 Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150SK60TG Microsemi Corporation APTGT150SK60TG.pdf Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DA170D1G Microsemi Corporation APTGT150DA170D1.pdf Description: IGBT MODULE 1700V 280A 780W D1
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APTGT150SK120D1G Microsemi Corporation Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150SK170D1G Microsemi Corporation APTGT150SK170D1.pdf Description: IGBT MODULE 1700V 280A 780W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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APTGT150DA120D1G Microsemi Corporation Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150A170G Microsemi Corporation Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150A60TG Microsemi Corporation APTGT150A60TG.pdf Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DU170G Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=7734 Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150A120D1G Microsemi Corporation Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150A170D1G Microsemi Corporation Description: IGBT MODULE 1700V 280A 780W D1
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APTGT150DA120TG Microsemi Corporation APTGT150DA120TG.pdf Description: IGBT MODULE 1200V 220A 690W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V
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APTGT150DA170G Microsemi Corporation Description: IGBT MODULE 1700V 250A 890W SP6
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APTC80DA15T1G Microsemi Corporation APTC80DA15T1G.pdf Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
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APTC80SK15T1G Microsemi Corporation APTC80SK15T1G.pdf Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
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APTC80DSK15T3G Microsemi Corporation Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Obsolete
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APTC80DSK29T3G Microsemi Corporation APTC80DSK29T3G.pdf Description: MOSFET 2N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
Part Status: Obsolete
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APTC80A15T1G Microsemi Corporation APTC80A15T1G.pdf Description: MOSFET 2N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
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DS31408DK Microsemi Corporation DS31408DK_2012May.pdf Description: KIT DEMO DS31408
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31408
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31404DK Microsemi Corporation DS31404DK_2012May.pdf Description: KIT DEMO DS31404
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31404
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31415DK Microsemi Corporation DS31415DK_2012May.pdf Description: EVAL BOARD FOR DS31415
Packaging: Box
Function: PLL
Type: Timing
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: DS31415
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31400DK Microsemi Corporation DS31400DK_2012May.pdf Description: KIT DEMO DS31400
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31400
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31407DK Microsemi Corporation DS31407DK_2012May.pdf Description: KIT DEMO DS31407
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31407
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31406DK Microsemi Corporation DS31406DK_2012May.pdf Description: KIT DEMO DS31406
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31406
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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APT20M19JVR APT20M19JVR Microsemi Corporation APT20M19JVR.pdf Description: MOSFET N-CH 200V 112A ISOTOP
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1N5250A (DO-35) 1N5250A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 20V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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1.5KE22CAE3/TR13 1.5KE22CAE3/TR13 Microsemi Corporation DS_278_1.5KE%20Series.pdf Description: TVS DIODE 18.8VWM 30.6VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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MP5KE22CA MP5KE22CA Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE22CAe3 MP5KE22CAe3 Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE22CA MAP5KE22CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE22CAe3 MAP5KE22CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE22CAe3 MXP5KE22CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE22CA MXP5KE22CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE33CA MXP5KE33CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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APT5025BN Microsemi Corporation APT5025BN%2C_APT5030BN.pdf Description: MOSFET N-CH 500V 23A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 11.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
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APT50GT120B2RDLG APT50GT120B2RDLG Microsemi Corporation 7105-apt50gt120b2rdlg-datasheet Description: IGBT NPT 1200V 106A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/215ns
Switching Energy: 3585µJ (on), 1910µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 694 W
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+1480.79 грн
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APT5022BNG Microsemi Corporation APT5020BN,_APT5022BN.pdf Description: MOSFET N-CH 500V 27A TO247AD
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APT50M80B2VRG APT50M80B2VRG Microsemi Corporation Description: MOSFET N-CH 500V 58A T-MAX
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SL24e3/TR7
Виробник: Microsemi Corporation
Description: TVS DIODE SOT23
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MPLAD6.5KP100CA 129479-rf01083-datasheet
MPLAD6.5KP100CA
Виробник: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
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MPLAD6.5KP100CAe3 129479-rf01083-datasheet
MPLAD6.5KP100CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
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MAP5KE33Ae3 11043-p5ke-datasheet
MAP5KE33Ae3
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MXLP5KE33A
MXLP5KE33A
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXP5KE33CAe3 11043-p5ke-datasheet
MXP5KE33CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MP5KE33A MP5KE5.0A-170CA%28e3%29.pdf
MP5KE33A
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXP5KE33A 11043-p5ke-datasheet
MXP5KE33A
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MXLP5KE33CA 11043-p5ke-datasheet
MXLP5KE33CA
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MAP5KE33CAe3 11043-p5ke-datasheet
MAP5KE33CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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MXLP5KE33CAe3 11043-p5ke-datasheet
MXLP5KE33CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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1090MP 5663-1090mp-datasheet-rev-b-pdf
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.15GHZ 55FW-1
Packaging: Bulk
Package / Case: 55FW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.08dB ~ 8.5dB
Power - Max: 250W
Current - Collector (Ic) (Max): 6.5A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55FW-1
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MPT-12C 129294-lds-0292-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 12VWM 17.1VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 17.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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JANTX1N4982CUS 11059-sd44a-datasheet
JANTX1N4982CUS
Виробник: Microsemi Corporation
Description: DIODE ZENER 100V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 110 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 76 V
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SG137AIG-883B 135123-sg137-sg137a-datasheet
SG137AIG-883B
Виробник: Microsemi Corporation
Description: IC REG LIN NEG ADJ 1.5A TO257
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JANSR2N7381 8937-lds-0124-datasheet
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 9.4A TO257
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JANSR2N7380 8936-lds-0123-datasheet
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 14.4A TO257
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APT5012JN APT5010JN,_APT5012JN_Web.pdf
APT5012JN
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 43A ISOTOP
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MXP5KE33Ae3
MXP5KE33Ae3
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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1N4118 (DO35) 129734-lds-0245-2-datasheet
1N4118 (DO35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 27V 400MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 20.45 V
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APTGT150DA60TG APTGT150DA60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DU60TG index.php?option=com_docman&task=doc_download&gid=7735
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150H170G index.php?option=com_docman&task=doc_download&gid=7737
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150SK60TG APTGT150SK60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DA170D1G APTGT150DA170D1.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 280A 780W D1
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APTGT150SK120D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150SK170D1G APTGT150SK170D1.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 280A 780W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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APTGT150DA120D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150A170G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150A60TG APTGT150A60TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DU170G index.php?option=com_docman&task=doc_download&gid=7734
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150A120D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150A170D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 280A 780W D1
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APTGT150DA120TG APTGT150DA120TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 690W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V
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APTGT150DA170G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
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APTC80DA15T1G APTC80DA15T1G.pdf
Виробник: Microsemi Corporation
Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
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APTC80SK15T1G APTC80SK15T1G.pdf
Виробник: Microsemi Corporation
Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
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APTC80DSK15T3G
Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Obsolete
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APTC80DSK29T3G APTC80DSK29T3G.pdf
Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
Part Status: Obsolete
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APTC80A15T1G APTC80A15T1G.pdf
Виробник: Microsemi Corporation
Description: MOSFET 2N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
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DS31408DK DS31408DK_2012May.pdf
Виробник: Microsemi Corporation
Description: KIT DEMO DS31408
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31408
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31404DK DS31404DK_2012May.pdf
Виробник: Microsemi Corporation
Description: KIT DEMO DS31404
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31404
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31415DK DS31415DK_2012May.pdf
Виробник: Microsemi Corporation
Description: EVAL BOARD FOR DS31415
Packaging: Box
Function: PLL
Type: Timing
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: DS31415
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31400DK DS31400DK_2012May.pdf
Виробник: Microsemi Corporation
Description: KIT DEMO DS31400
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31400
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31407DK DS31407DK_2012May.pdf
Виробник: Microsemi Corporation
Description: KIT DEMO DS31407
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31407
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31406DK DS31406DK_2012May.pdf
Виробник: Microsemi Corporation
Description: KIT DEMO DS31406
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31406
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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APT20M19JVR APT20M19JVR.pdf
APT20M19JVR
Виробник: Microsemi Corporation
Description: MOSFET N-CH 200V 112A ISOTOP
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1N5250A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5250A (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 20V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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1.5KE22CAE3/TR13 DS_278_1.5KE%20Series.pdf
1.5KE22CAE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 18.8VWM 30.6VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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MP5KE22CA MP5KE5.0A-170CA%28e3%29.pdf
MP5KE22CA
Виробник: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE22CAe3 MP5KE5.0A-170CA%28e3%29.pdf
MP5KE22CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE22CA 11043-p5ke-datasheet
MAP5KE22CA
Виробник: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE22CAe3 11043-p5ke-datasheet
MAP5KE22CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE22CAe3 11043-p5ke-datasheet
MXP5KE22CAe3
Виробник: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE22CA 11043-p5ke-datasheet
MXP5KE22CA
Виробник: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE33CA 11043-p5ke-datasheet
MXP5KE33CA
Виробник: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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APT5025BN APT5025BN%2C_APT5030BN.pdf
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 23A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 11.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
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APT50GT120B2RDLG 7105-apt50gt120b2rdlg-datasheet
APT50GT120B2RDLG
Виробник: Microsemi Corporation
Description: IGBT NPT 1200V 106A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/215ns
Switching Energy: 3585µJ (on), 1910µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 694 W
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1480.79 грн
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APT5022BNG APT5020BN,_APT5022BN.pdf
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 27A TO247AD
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APT50M80B2VRG
APT50M80B2VRG
Виробник: Microsemi Corporation
Description: MOSFET N-CH 500V 58A T-MAX
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