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1N5956AP/TR12 1N5956AP/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товар відсутній
1N5956CPE3/TR12 1N5956CPE3/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товар відсутній
1N5956P/TR8 1N5956P/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товар відсутній
APTGT75A170D1G Microsemi Corporation Description: IGBT MODULE 1700V 120A 520W D1
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APTGT75DA170D1G Microsemi Corporation Description: IGBT MODULE 1700V 120A 520W D1
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APTGT25DA120D1G Microsemi Corporation APTGT25DA120D1.pdf Description: IGBT MODULE 1200V 40A 140W D1
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APTGT50A120D1G Microsemi Corporation Description: IGBT MODULE 1200V 75A 270W D1
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1.5KE250CAE3/TR13 1.5KE250CAE3/TR13 Microsemi Corporation 9459-m1-5ke-datasheet Description: TVS DIODE 214VWM 344VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SK310B/TR13 SK310B/TR13 Microsemi Corporation SK32-24%2C36%2C38%2C310B.pdf Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
SK310BE3/TR13 SK310BE3/TR13 Microsemi Corporation SK32-24%2C36%2C38%2C310B.pdf Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
SK310/TR13 Microsemi Corporation Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
SK310E3/TR13 Microsemi Corporation Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
MXPLAD30KP280A Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 280VWM 451VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 451V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP350Ae3 Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP300A Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 300VWM 483VC PLAD
товар відсутній
MXPLAD30KP300Ae3 Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 300VWM 483VC PLAD
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MXPLAD30KP350A Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP220A Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 220VWM 356VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP220Ae3 Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 220VWM 356VC PLAD
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MXPLAD30KP400Ae3 MXPLAD30KP400Ae3 Microsemi Corporation 9523-mplad30kp-datasheet Description: TVS DIODE 400VWM 644VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46A
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 444V
Voltage - Clamping (Max) @ Ipp: 644V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
1N5365B 1N5365B Microsemi Corporation 1N5333B-88B.pdf Description: ZENER DO201 36V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 25.9 V
товар відсутній
JANTX1N4480CUS JANTX1N4480CUS Microsemi Corporation 124793-lds-0183-1-datasheet Description: DIODE ZENER 43V 1.5W D5A
товар відсутній
JANTX1N4488DUS JANTX1N4488DUS Microsemi Corporation 124793-lds-0183-1-datasheet Description: DIODE ZENER 91V 1.5W D5A
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Qualification: MIL-PRF-19500/406
товар відсутній
JANTX1N4485DUS JANTX1N4485DUS Microsemi Corporation 124793-lds-0183-1-datasheet Description: DIODE ZENER 68V 1.5W D5A
товар відсутній
JANTX1N4481DUS JANTX1N4481DUS Microsemi Corporation 124793-lds-0183-1-datasheet Description: DIODE ZENER 47V 1.5W D5A
товар відсутній
JANTX1N4482CUS JANTX1N4482CUS Microsemi Corporation 124793-lds-0183-1-datasheet Description: DIODE ZENER 51V 1.5W D5A
товар відсутній
P6KE51AE3/TR13 P6KE51AE3/TR13 Microsemi Corporation 10895-sa4-59-datasheet Description: TVS DIODE 43.6VWM 70.1VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
APT47N65BC3G APT47N65BC3G Microsemi Corporation 7067-apt47n65bc3-apt47n65sc3-datasheet Description: MOSFET N-CH 650V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
товар відсутній
APT47N65SCS3G Microsemi Corporation Description: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
товар відсутній
1N5230A (DO-35) 1N5230A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B,%20e3%20DO-35.pdf Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V
товар відсутній
1N5230B (DO-35) 1N5230B (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
товар відсутній
1N5358/TR8 1N5358/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 22V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
товар відсутній
1N4102 (DO35) 1N4102 (DO35) Microsemi Corporation 129734-lds-0245-2-datasheet Description: DIODE ZENER 8.7V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V
товар відсутній
1N4702 (DO35) 1N4702 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
товар відсутній
1N4437_FT Microsemi Corporation 10488-msc1688-pdf Description: BRIDGE RECT 1PHASE 400V
товар відсутній
MDS60L Microsemi Corporation 9486-mds60l-data-sheet-rev-b-pdf Description: RF TRANS NPN 65V 1.09GHZ 55AW
Packaging: Bulk
Package / Case: 55AW
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 120W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55AW
Part Status: Obsolete
товар відсутній
1.5KE130AE3/TR13 1.5KE130AE3/TR13 Microsemi Corporation DS_278_1.5KE%20Series.pdf Description: TVS DIODE 111VWM 179VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
MP5KE43AE3 MP5KE43AE3 Microsemi Corporation MP5KE5.0A-170CA(e3).pdf Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MAP5KE43A MAP5KE43A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MXLP5KE43Ae3 MXLP5KE43Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
1.5KE43AE3/TR13 1.5KE43AE3/TR13 Microsemi Corporation 9459-m1-5ke-datasheet Description: TVS DIODE 36.8VWM 59.3VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товар відсутній
LX2203AILD-TR Microsemi Corporation LX2203AILD.pdf Description: IC BATT CHG LI-ION 1CELL 10MLPD
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LX2203CLD Microsemi Corporation 9125-lx2203-pdf Description: IC BATT CHG LI-ION 1CELL 10MLPD
товар відсутній
LX2203AILD Microsemi Corporation 9126-lx2203a-pdf Description: IC BATT CHG LI-ION 1CELL 10MLPD
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LX2203CLD-TR Microsemi Corporation LX2203CLD.pdf Description: IC BATT CHG LI-ION 1CELL 10MLPD
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MPT-36 Microsemi Corporation 129294-lds-0292-datasheet Description: TVS DIODE 36VWM 54.3VC DO13
товар відсутній
MPT-36C Microsemi Corporation 129294-lds-0292-datasheet Description: TVS DIODE 36VWM 54.3VC DO13
товар відсутній
JAN2N7236U Microsemi Corporation 125222-lds-0061-1-datasheet Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
товар відсутній
JANTX2N7236U Microsemi Corporation 125222-lds-0061-1-datasheet Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JAN2N7236 Microsemi Corporation 8900-lds-0061-datasheet Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JANTXV2N7236U Microsemi Corporation 125222-lds-0061-1-datasheet Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JANTX2N7236 Microsemi Corporation 8900-lds-0061-datasheet Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JANTXV2N7236 Microsemi Corporation 8900-lds-0061-datasheet Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
2N7236U Microsemi Corporation 125222-lds-0061-1-datasheet Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
товар відсутній
2N7236 Microsemi Corporation 8900-lds-0061-datasheet Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
товар відсутній
1N5236BDO35E3 1N5236BDO35E3 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
1N5236BDO35E3 1N5236BDO35E3 Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
1N5236A (DO-35) 1N5236A (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V
товар відсутній
1N5236B (DO-35) 1N5236B (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
JANTX2N2325AU4 Microsemi Corporation Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
товар відсутній
1N5956AP/TR12 10922-sa5-57-datasheet
1N5956AP/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товар відсутній
1N5956CPE3/TR12 10922-sa5-57-datasheet
1N5956CPE3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товар відсутній
1N5956P/TR8 10922-sa5-57-datasheet
1N5956P/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товар відсутній
APTGT75A170D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 120A 520W D1
товар відсутній
APTGT75DA170D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1700V 120A 520W D1
товар відсутній
APTGT25DA120D1G APTGT25DA120D1.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 140W D1
товар відсутній
APTGT50A120D1G
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W D1
товар відсутній
1.5KE250CAE3/TR13 9459-m1-5ke-datasheet
1.5KE250CAE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 214VWM 344VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товар відсутній
SK310B/TR13 SK32-24%2C36%2C38%2C310B.pdf
SK310B/TR13
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
SK310BE3/TR13 SK32-24%2C36%2C38%2C310B.pdf
SK310BE3/TR13
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товар відсутній
SK310/TR13
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
SK310E3/TR13
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
товар відсутній
MXPLAD30KP280A 9523-mplad30kp-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 280VWM 451VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 451V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP350Ae3 9523-mplad30kp-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP300A 9523-mplad30kp-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 300VWM 483VC PLAD
товар відсутній
MXPLAD30KP300Ae3 9523-mplad30kp-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 300VWM 483VC PLAD
товар відсутній
MXPLAD30KP350A 9523-mplad30kp-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP220A 9523-mplad30kp-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 220VWM 356VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
товар відсутній
MXPLAD30KP220Ae3 9523-mplad30kp-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 220VWM 356VC PLAD
товар відсутній
MXPLAD30KP400Ae3 9523-mplad30kp-datasheet
MXPLAD30KP400Ae3
Виробник: Microsemi Corporation
Description: TVS DIODE 400VWM 644VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46A
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 444V
Voltage - Clamping (Max) @ Ipp: 644V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
1N5365B 1N5333B-88B.pdf
1N5365B
Виробник: Microsemi Corporation
Description: ZENER DO201 36V 5W 5%
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 25.9 V
товар відсутній
JANTX1N4480CUS 124793-lds-0183-1-datasheet
JANTX1N4480CUS
Виробник: Microsemi Corporation
Description: DIODE ZENER 43V 1.5W D5A
товар відсутній
JANTX1N4488DUS 124793-lds-0183-1-datasheet
JANTX1N4488DUS
Виробник: Microsemi Corporation
Description: DIODE ZENER 91V 1.5W D5A
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Qualification: MIL-PRF-19500/406
товар відсутній
JANTX1N4485DUS 124793-lds-0183-1-datasheet
JANTX1N4485DUS
Виробник: Microsemi Corporation
Description: DIODE ZENER 68V 1.5W D5A
товар відсутній
JANTX1N4481DUS 124793-lds-0183-1-datasheet
JANTX1N4481DUS
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 1.5W D5A
товар відсутній
JANTX1N4482CUS 124793-lds-0183-1-datasheet
JANTX1N4482CUS
Виробник: Microsemi Corporation
Description: DIODE ZENER 51V 1.5W D5A
товар відсутній
P6KE51AE3/TR13 10895-sa4-59-datasheet
P6KE51AE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 43.6VWM 70.1VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товар відсутній
APT47N65BC3G 7067-apt47n65bc3-apt47n65sc3-datasheet
APT47N65BC3G
Виробник: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
товар відсутній
APT47N65SCS3G
Виробник: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
товар відсутній
1N5230A (DO-35) 1N5221%20-%201N5281B,%20e3%20DO-35.pdf
1N5230A (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V
товар відсутній
1N5230B (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5230B (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
товар відсутній
1N5358/TR8 1N5333B-88B.pdf
1N5358/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 22V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
товар відсутній
1N4102 (DO35) 129734-lds-0245-2-datasheet
1N4102 (DO35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 8.7V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V
товар відсутній
1N4702 (DO35) 125997-lds-0240-datasheet
1N4702 (DO35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
товар відсутній
1N4437_FT 10488-msc1688-pdf
Виробник: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 400V
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MDS60L 9486-mds60l-data-sheet-rev-b-pdf
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55AW
Packaging: Bulk
Package / Case: 55AW
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 120W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55AW
Part Status: Obsolete
товар відсутній
1.5KE130AE3/TR13 DS_278_1.5KE%20Series.pdf
1.5KE130AE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 111VWM 179VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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MP5KE43AE3 MP5KE5.0A-170CA(e3).pdf
MP5KE43AE3
Виробник: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE43A 11043-p5ke-datasheet
MAP5KE43A
Виробник: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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MXLP5KE43Ae3 11043-p5ke-datasheet
MXLP5KE43Ae3
Виробник: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
1.5KE43AE3/TR13 9459-m1-5ke-datasheet
1.5KE43AE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 36.8VWM 59.3VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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LX2203AILD-TR LX2203AILD.pdf
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
товар відсутній
LX2203CLD 9125-lx2203-pdf
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
товар відсутній
LX2203AILD 9126-lx2203a-pdf
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
товар відсутній
LX2203CLD-TR LX2203CLD.pdf
Виробник: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
товар відсутній
MPT-36 129294-lds-0292-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 36VWM 54.3VC DO13
товар відсутній
MPT-36C 129294-lds-0292-datasheet
Виробник: Microsemi Corporation
Description: TVS DIODE 36VWM 54.3VC DO13
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JAN2N7236U 125222-lds-0061-1-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
товар відсутній
JANTX2N7236U 125222-lds-0061-1-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JAN2N7236 8900-lds-0061-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JANTXV2N7236U 125222-lds-0061-1-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JANTX2N7236 8900-lds-0061-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
JANTXV2N7236 8900-lds-0061-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Grade: Military
Qualification: MIL-PRF-19500/595
товар відсутній
2N7236U 125222-lds-0061-1-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
товар відсутній
2N7236 8900-lds-0061-datasheet
Виробник: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
товар відсутній
1N5236BDO35E3 1N5221 - 1N5281B, e3 DO-35.pdf
1N5236BDO35E3
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
1N5236BDO35E3 1N5221 - 1N5281B, e3 DO-35.pdf
1N5236BDO35E3
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
1N5236A (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5236A (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V
товар відсутній
1N5236B (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5236B (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
товар відсутній
JANTX2N2325AU4
Виробник: Microsemi Corporation
Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 20 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 600 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
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