Продукція > MICROSEMI CORPORATION > Всі товари виробника MICROSEMI CORPORATION (11172) > Сторінка 158 з 187
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| S200-50 | Microsemi Corporation |
 Description: RF TRANS NPN 110V 30MHZ 55HXPackaging: Bulk Package / Case: 55HX Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12dB ~ 14.5dB Power - Max: 320W Current - Collector (Ic) (Max): 30A Voltage - Collector Emitter Breakdown (Max): 110V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 1.5MHz ~ 30MHz Supplier Device Package: 55HX Part Status: Obsolete |
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APT33N90JCCU2 | Microsemi Corporation |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
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APT33N90JCCU3 | Microsemi Corporation |
Description: MOSFET N-CH 900V 33A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SOT-227 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
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1N5366B | Microsemi Corporation |
 Description: DIODE ZENER 39V 5W T18Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 28.1 V |
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APT11GF120KRG | Microsemi Corporation |
Description: IGBT 1200V 25A 156W TO220 |
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MAP5KE28CA | Microsemi Corporation |
Description: TVS DIODE 28VWM 45.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MAP5KE28A | Microsemi Corporation |
Description: TVS DIODE 28VWM 45.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MAP5KE48A | Microsemi Corporation |
Description: TVS DIODE 48VWM 77.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.5A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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1N5223A (DO-35)TR | Microsemi Corporation |
Description: DIODE ZENER 2.7V 500MW DO35 Tolerance: ±10% Packaging: Bag Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-204AH (DO-35) Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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1N5223B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 2.7V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 75 µA @ 1 V |
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| APT30SCD65B | Microsemi Corporation |
Description: DIODE SIL CARBIDE 650V 46A TO247 Packaging: Bulk Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 945pF @ 1V, 1MHz Current - Average Rectified (Io): 46A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 600 µA @ 650 V |
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| MDS400 | Microsemi Corporation |
Description: RF TRANS NPN 55V 1.09GHZ 55KT Packaging: Bulk Package / Case: 55KT Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 6.5dB Power - Max: 1450W Current - Collector (Ic) (Max): 40A Voltage - Collector Emitter Breakdown (Max): 55V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Frequency - Transition: 1.03GHz ~ 1.09GHz Supplier Device Package: 55KT Part Status: Obsolete |
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| TAN300 | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.215GHZ 55KT |
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| TPR700 | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.09GHZ 55KT |
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| DME500 | Microsemi Corporation |
Description: RF TRANS NPN 55V 1.15GHZ 55KT Packaging: Bulk Package / Case: 55KT Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 6dB ~ 6.5dB Power - Max: 1700W Current - Collector (Ic) (Max): 40A Voltage - Collector Emitter Breakdown (Max): 55V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Frequency - Transition: 1.025GHz ~ 1.15GHz Supplier Device Package: 55KT Part Status: Obsolete |
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| 1214-110M | Microsemi Corporation |
Description: RF TRANS NPN 75V 1.4GHZ 55KT |
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1N4116 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 24V 400MW DO35 |
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ZL30347GGG | Microsemi Corporation |
Description: IC PLL IEEE SYNCH 100LFBGA Packaging: Tray Package / Case: 100-FBGA Mounting Type: Surface Mount Output: Clock Frequency - Max: 622.08MHz Input: Clock Operating Temperature: -40°C ~ 85°C Main Purpose: Ethernet, SONET/SDH Ratio - Input:Output: 1:13 Differential - Input:Output: No/Yes Supplier Device Package: 100-CABGA (9x9) PLL: Yes Number of Circuits: 1 DigiKey Programmable: Not Verified |
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ZL30321GGG | Microsemi Corporation |
Description: IC NETWORK SYNCHRONIZE 100LFBGA Packaging: Tray Package / Case: 100-FBGA Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 125MHz Input: LVCMOS Operating Temperature: -40°C ~ 85°C Main Purpose: Ethernet, SONET/SDH/PDH, Telecom Ratio - Input:Output: 11:9 Differential - Input:Output: No/No Supplier Device Package: 100-CABGA (9x9) PLL: Yes Number of Circuits: 1 DigiKey Programmable: Not Verified |
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MSDM75-16 | Microsemi Corporation |
Description: BRIDGE RECT 3P 1.6KV 75A M2-1 |
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| MS2212 | Microsemi Corporation |
Description: RF TRANS NPN 55V 1.215GHZ M222 |
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| WIN867W6NHEI-350A1 | Microsemi Corporation |
Description: WINPATH2 867W6 PROC 350MHZ LF Packaging: Tray Interface: Ethernet, PCI, SPI, USB Applications: Network Processor Core Processor: MIPS32® 24Kc™ Part Status: Active DigiKey Programmable: Not Verified |
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| 2C2329 | Microsemi Corporation |
Description: SCR SILICON CTRL RECTIFIER Packaging: Bulk Part Status: Obsolete |
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SMBJ5378B/TR13 | Microsemi Corporation |
Description: DIODE ZENER 100V 5W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 72 V |
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SMBJ5378BE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 100V 5W SMBJ Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 100 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SMBJ (DO-214AA) Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 72 V |
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MSD100-08 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 100A M3 Packaging: Bulk Package / Case: SM3-20H Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: M3 Part Status: Obsolete Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 300 A Current - Reverse Leakage @ Vr: 300 µA @ 800 V |
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| A3PE3000-FG324 | Microsemi Corporation |
Description: IC FPGA 221 I/O 324FBGA Packaging: Tray Package / Case: 324-BGA Mounting Type: Surface Mount Number of Gates: 3000000 Operating Temperature: 0°C ~ 85°C (TJ) Voltage - Supply: 1.425V ~ 1.575V Supplier Device Package: 324-FBGA (19x19) Total RAM Bits: 516096 Part Status: Active Number of I/O: 221 |
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2EZ5.1D2E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D10E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D2/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D10E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1DE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D2E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D10/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D10/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D10/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D2E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D10E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D2/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D10E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D2/TR8 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D10/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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3EZ5.1D/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D2/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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2EZ5.1D2E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
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1N5921BG | Microsemi Corporation |
Description: DIODE ZENER 6.8V 1.25W DO204AL Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V |
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| PD-IM-7301 | Microsemi Corporation |
Description: POE EVB Packaging: Bulk Function: Power Over Ethernet (PoE) Type: Power Management Utilized IC / Part: PD64001, PD64001H Supplied Contents: Board(s) Part Status: Active |
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1N4686 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 3.9V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.9 V Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
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| APTGF15H120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 25A 140W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 140 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
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| APTGF15A120T1G | Microsemi Corporation |
Description: IGBT MODULE 1200V 25A 140W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 140 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
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| APTGF15H120T1G | Microsemi Corporation |
Description: IGBT MODULE 1200V 25A 140W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 140 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 1 nF @ 25 V |
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APTGF150A120T3WG | Microsemi Corporation |
Description: IGBT MODULE 1200V 210A 961W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 210 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 961 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
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| 1N6303Ae3/TR13 | Microsemi Corporation |
Description: TVS DIODE 171VWM 274VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.5A Voltage - Reverse Standoff (Typ): 171V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 274V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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| 1N6303e3/TR13 | Microsemi Corporation |
Description: TVS DIODE 162VWM 287VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.2A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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APT60DQ120LCTG | Microsemi Corporation |
Description: DIODE ARRAY GP 1200V 60A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 320 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-264 [L] Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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APT15GP60KG | Microsemi Corporation |
Description: IGBT 600V 56A 250W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Supplier Device Package: TO-220 [K] IGBT Type: PT Td (on/off) @ 25°C: 8ns/29ns Switching Energy: 130µJ (on), 121µJ (off) Test Condition: 400V, 15A, 5Ohm, 15V Gate Charge: 55 nC Part Status: Obsolete Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 65 A Power - Max: 250 W |
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MXP5KE64CAe3 | Microsemi Corporation |
Description: TVS DIODE 64VWM 103VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4.9A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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1N5362B | Microsemi Corporation |
Description: DIODE ZENER 28V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 28 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V |
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| S200-50 |
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Виробник: Microsemi Corporation
Description: RF TRANS NPN 110V 30MHZ 55HX
Packaging: Bulk
Package / Case: 55HX
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 14.5dB
Power - Max: 320W
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 110V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.5MHz ~ 30MHz
Supplier Device Package: 55HX
Part Status: Obsolete
Description: RF TRANS NPN 110V 30MHZ 55HX
Packaging: Bulk
Package / Case: 55HX
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 14.5dB
Power - Max: 320W
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 110V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.5MHz ~ 30MHz
Supplier Device Package: 55HX
Part Status: Obsolete
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| APT33N90JCCU2 |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| APT33N90JCCU3 |
Виробник: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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| 1N5366B | |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 39V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 28.1 V
Description: DIODE ZENER 39V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 28.1 V
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| APT11GF120KRG |
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Виробник: Microsemi Corporation
Description: IGBT 1200V 25A 156W TO220
Description: IGBT 1200V 25A 156W TO220
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| MAP5KE28CA |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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| MAP5KE28A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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| MAP5KE48A |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| 1N5223A (DO-35)TR |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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| 1N5223B (DO-35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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| APT30SCD65B |
Виробник: Microsemi Corporation
Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
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| MDS400 |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 55V 1.09GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB
Power - Max: 1450W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55KT
Part Status: Obsolete
Description: RF TRANS NPN 55V 1.09GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB
Power - Max: 1450W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55KT
Part Status: Obsolete
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В кошику
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| TAN300 |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.215GHZ 55KT
Description: RF TRANS NPN 65V 1.215GHZ 55KT
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В кошику
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| TPR700 |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55KT
Description: RF TRANS NPN 65V 1.09GHZ 55KT
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В кошику
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| DME500 |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 55V 1.15GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55KT
Part Status: Obsolete
Description: RF TRANS NPN 55V 1.15GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55KT
Part Status: Obsolete
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В кошику
од. на суму грн.
| 1214-110M |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 75V 1.4GHZ 55KT
Description: RF TRANS NPN 75V 1.4GHZ 55KT
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В кошику
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| 1N4116 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 24V 400MW DO35
Description: DIODE ZENER 24V 400MW DO35
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В кошику
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| ZL30347GGG |
|
Виробник: Microsemi Corporation
Description: IC PLL IEEE SYNCH 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 622.08MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH
Ratio - Input:Output: 1:13
Differential - Input:Output: No/Yes
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC PLL IEEE SYNCH 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 622.08MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH
Ratio - Input:Output: 1:13
Differential - Input:Output: No/Yes
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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В кошику
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| ZL30321GGG |
|
Виробник: Microsemi Corporation
Description: IC NETWORK SYNCHRONIZE 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH/PDH, Telecom
Ratio - Input:Output: 11:9
Differential - Input:Output: No/No
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC NETWORK SYNCHRONIZE 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH/PDH, Telecom
Ratio - Input:Output: 11:9
Differential - Input:Output: No/No
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| MSDM75-16 |
|
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Description: BRIDGE RECT 3P 1.6KV 75A M2-1
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В кошику
од. на суму грн.
| MS2212 |
|
Виробник: Microsemi Corporation
Description: RF TRANS NPN 55V 1.215GHZ M222
Description: RF TRANS NPN 55V 1.215GHZ M222
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В кошику
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| WIN867W6NHEI-350A1 |
Виробник: Microsemi Corporation
Description: WINPATH2 867W6 PROC 350MHZ LF
Packaging: Tray
Interface: Ethernet, PCI, SPI, USB
Applications: Network Processor
Core Processor: MIPS32® 24Kc™
Part Status: Active
DigiKey Programmable: Not Verified
Description: WINPATH2 867W6 PROC 350MHZ LF
Packaging: Tray
Interface: Ethernet, PCI, SPI, USB
Applications: Network Processor
Core Processor: MIPS32® 24Kc™
Part Status: Active
DigiKey Programmable: Not Verified
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В кошику
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| 2C2329 |
Виробник: Microsemi Corporation
Description: SCR SILICON CTRL RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Description: SCR SILICON CTRL RECTIFIER
Packaging: Bulk
Part Status: Obsolete
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В кошику
од. на суму грн.
| SMBJ5378B/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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В кошику
од. на суму грн.
| SMBJ5378BE3/TR13 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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В кошику
од. на суму грн.
| MSD100-08 |
|
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 100A M3
Packaging: Bulk
Package / Case: SM3-20H
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
Description: BRIDGE RECT 3PHASE 800V 100A M3
Packaging: Bulk
Package / Case: SM3-20H
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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В кошику
од. на суму грн.
| A3PE3000-FG324 |
|
Виробник: Microsemi Corporation
Description: IC FPGA 221 I/O 324FBGA
Packaging: Tray
Package / Case: 324-BGA
Mounting Type: Surface Mount
Number of Gates: 3000000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 324-FBGA (19x19)
Total RAM Bits: 516096
Part Status: Active
Number of I/O: 221
Description: IC FPGA 221 I/O 324FBGA
Packaging: Tray
Package / Case: 324-BGA
Mounting Type: Surface Mount
Number of Gates: 3000000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 324-FBGA (19x19)
Total RAM Bits: 516096
Part Status: Active
Number of I/O: 221
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В кошику
од. на суму грн.
| 2EZ5.1D2E3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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В кошику
од. на суму грн.
| 2EZ5.1D10E3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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В кошику
од. на суму грн.
| 3EZ5.1D2/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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В кошику
од. на суму грн.
| 2EZ5.1D/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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В кошику
од. на суму грн.
| 3EZ5.1D10E3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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В кошику
од. на суму грн.
| 2EZ5.1DE3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D2E3/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D10/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D10/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EZ5.1D10/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D2E3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D10E3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D2/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EZ5.1D10E3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EZ5.1D2/TR8 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EZ5.1D10/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 3EZ5.1D/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EZ5.1D2/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 2EZ5.1D2E3/TR12 |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 5.1V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N5921BG |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 6.8V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Description: DIODE ZENER 6.8V 1.25W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
товару немає в наявності
В кошику
од. на суму грн.
| PD-IM-7301 |
|
Виробник: Microsemi Corporation
Description: POE EVB
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD64001, PD64001H
Supplied Contents: Board(s)
Part Status: Active
Description: POE EVB
Packaging: Bulk
Function: Power Over Ethernet (PoE)
Type: Power Management
Utilized IC / Part: PD64001, PD64001H
Supplied Contents: Board(s)
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N4686 (DO35) |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGF15H120T3G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGF15A120T1G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGF15H120T1G |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Description: IGBT MODULE 1200V 25A 140W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| APTGF150A120T3WG |
|
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 210A 961W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Description: IGBT MODULE 1200V 210A 961W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N6303Ae3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 171VWM 274VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 171VWM 274VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| 1N6303e3/TR13 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 162VWM 287VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 162VWM 287VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.2A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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| APT60DQ120LCTG |
|
Виробник: Microsemi Corporation
Description: DIODE ARRAY GP 1200V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 320 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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| APT15GP60KG |
|
Виробник: Microsemi Corporation
Description: IGBT 600V 56A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
Description: IGBT 600V 56A 250W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
Supplier Device Package: TO-220 [K]
IGBT Type: PT
Td (on/off) @ 25°C: 8ns/29ns
Switching Energy: 130µJ (on), 121µJ (off)
Test Condition: 400V, 15A, 5Ohm, 15V
Gate Charge: 55 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 65 A
Power - Max: 250 W
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| MXP5KE64CAe3 |
|
Виробник: Microsemi Corporation
Description: TVS DIODE 64VWM 103VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 64VWM 103VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.9A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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| 1N5362B |
|
Виробник: Microsemi Corporation
Description: DIODE ZENER 28V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V
Description: DIODE ZENER 28V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.1 V
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