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JAN2N7224U Microsemi Corporation 125220-lds-0102-1-datasheet Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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2N7224U Microsemi Corporation 125220-lds-0102-1-datasheet Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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APTGF25DSK120T3G Microsemi Corporation APTGF25DSK120T3G.pdf Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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APTGF30X60T3G Microsemi Corporation APTGF30X60T3G.pdf Description: IGBT MODULE 600V 42A 140W SP3
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APTGF25DDA120T3G Microsemi Corporation APTGF25DDA120T3G.pdf Description: IGBT MODULE 1200V 40A 208W SP3
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APTGV75H60T3G Microsemi Corporation Description: IGBT MODULE 600V 100A 250W SP3
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APTGT20X60T3G Microsemi Corporation APTGT20X60T3G.pdf Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGT20H60T3G Microsemi Corporation 7789-aptgt20h60t3g-datasheet Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGV100H60T3G Microsemi Corporation Description: IGBT MODULE 600V 150A 340W SP3
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APTGT20DSK60T3G Microsemi Corporation 7787-aptgt20dsk60t3g-datasheet Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGF15X120T3G Microsemi Corporation APTGF15X120T3G.pdf Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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MPLAD6.5KP130CA MPLAD6.5KP130CA Microsemi Corporation rf01083_rev_b.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31.1A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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1N5524B (DO35) 1N5524B (DO35) Microsemi Corporation 123956-lds-0037-1-datasheet Description: DIODE ZENER 5.6V 500MW DO35
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ZLR88822L Microsemi Corporation Description: REFERENCE DESIGN ZL8882L
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DRF1202 Microsemi Corporation Description: IC PWR DRIVER N-CHANNEL 1:1
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DRF1203 Microsemi Corporation Description: IC PWR DRIVER N-CHANNEL 1:1
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P6KE47AE3/TR13 P6KE47AE3/TR13 Microsemi Corporation 10895-sa4-59-datasheet Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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1N4683 (DO35) 1N4683 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 3V 500MW DO35
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SBR3050E3 SBR3050E3 Microsemi Corporation 8499-coc-93-datasheet Description: DIODE SCHOTTKY 50V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 50 V
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2EZ47D5 2EZ47D5 Microsemi Corporation 11109-sd8a-datasheet Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 2EZ47D5DO41E3 Microsemi Corporation 11109-sd8a-datasheet Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 2EZ47D5DO41E3 Microsemi Corporation 11109-sd8a-datasheet Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR12 2EZ47D5/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR8 2EZ47D5/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR8 2EZ47D5E3/TR8 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR12 2EZ47D5E3/TR12 Microsemi Corporation 2EZ3.6D5-2EZ200DS,e3.pdf Description: DIODE ZENER 47V 2W DO204AL
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1N5916BG 1N5916BG Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR8 1N5916BP/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BE3/TR13 1N5916BE3/TR13 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR12 1N5916BPE3/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR8 1N5916BPE3/TR8 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR12 1N5916BP/TR12 Microsemi Corporation 10922-sa5-57-datasheet Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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APTGF150SK120TG Microsemi Corporation APTGF150SK120TG.pdf Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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S200-50 Microsemi Corporation 10768-s200-50reva-datasheet Description: RF TRANS NPN 110V 30MHZ 55HX
Packaging: Bulk
Package / Case: 55HX
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 14.5dB
Power - Max: 320W
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 110V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.5MHz ~ 30MHz
Supplier Device Package: 55HX
Part Status: Obsolete
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APT33N90JCCU2 APT33N90JCCU2 Microsemi Corporation Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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APT33N90JCCU3 APT33N90JCCU3 Microsemi Corporation Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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1N5366B 1N5366B Microsemi Corporation 1N5333B-88B.pdf description Description: DIODE ZENER 39V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 28.1 V
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APT11GF120KRG APT11GF120KRG Microsemi Corporation APT11GF120KR(G).pdf Description: IGBT 1200V 25A 156W TO220
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MAP5KE28CA MAP5KE28CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MAP5KE28A MAP5KE28A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MAP5KE48A MAP5KE48A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N5223A (DO-35)TR 1N5223A (DO-35)TR Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5223B (DO-35) 1N5223B (DO-35) Microsemi Corporation 1N5221 - 1N5281B, e3 DO-35.pdf Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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APT30SCD65B Microsemi Corporation Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
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MDS400 Microsemi Corporation 9482-mds400-datasheet Description: RF TRANS NPN 55V 1.09GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB
Power - Max: 1450W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55KT
Part Status: Obsolete
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TAN300 Microsemi Corporation 11249-tan300-datasheet Description: RF TRANS NPN 65V 1.215GHZ 55KT
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TPR700 Microsemi Corporation 11280-tpr700reva-datasheet Description: RF TRANS NPN 65V 1.09GHZ 55KT
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DME500 Microsemi Corporation 8602-dme500-datasheet Description: RF TRANS NPN 55V 1.15GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55KT
Part Status: Obsolete
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1214-110M Microsemi Corporation 5710-1214-110m-rev1-2-datasheet Description: RF TRANS NPN 75V 1.4GHZ 55KT
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1N4116 (DO35) 1N4116 (DO35) Microsemi Corporation 129734-lds-0245-2-datasheet Description: DIODE ZENER 24V 400MW DO35
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ZL30347GGG ZL30347GGG Microsemi Corporation Description: IC PLL IEEE SYNCH 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 622.08MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH
Ratio - Input:Output: 1:13
Differential - Input:Output: No/Yes
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ZL30321GGG ZL30321GGG Microsemi Corporation Description: IC NETWORK SYNCHRONIZE 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH/PDH, Telecom
Ratio - Input:Output: 11:9
Differential - Input:Output: No/No
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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MSDM75-16 MSDM75-16 Microsemi Corporation MSDM75.pdf Description: BRIDGE RECT 3P 1.6KV 75A M2-1
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MS2212 Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=9630 Description: RF TRANS NPN 55V 1.215GHZ M222
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WIN867W6NHEI-350A1 Microsemi Corporation Description: WINPATH2 867W6 PROC 350MHZ LF
Packaging: Tray
Interface: Ethernet, PCI, SPI, USB
Applications: Network Processor
Core Processor: MIPS32® 24Kc™
Part Status: Active
DigiKey Programmable: Not Verified
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2C2329 Microsemi Corporation Description: SCR SILICON CTRL RECTIFIER
Packaging: Bulk
Part Status: Obsolete
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SMBJ5378B/TR13 SMBJ5378B/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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SMBJ5378BE3/TR13 SMBJ5378BE3/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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MSD100-08 MSD100-08 Microsemi Corporation 10532-msd100-rev1-datasheet Description: BRIDGE RECT 3PHASE 800V 100A M3
Packaging: Bulk
Package / Case: SM3-20H
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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A3PE3000-FG324 Microsemi Corporation 130701-ds0098-proasic3e-flash-family-fpgas-datasheet Description: IC FPGA 221 I/O 324FBGA
Packaging: Tray
Package / Case: 324-BGA
Mounting Type: Surface Mount
Number of Gates: 3000000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 324-FBGA (19x19)
Total RAM Bits: 516096
Part Status: Active
Number of I/O: 221
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JAN2N7224U 125220-lds-0102-1-datasheet
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Qualification: MIL-PRF-19500/592
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2N7224U 125220-lds-0102-1-datasheet
Виробник: Microsemi Corporation
Description: MOSFET N-CH 100V 34A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 34A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
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APTGF25DSK120T3G APTGF25DSK120T3G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 208W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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APTGF30X60T3G APTGF30X60T3G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 42A 140W SP3
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APTGF25DDA120T3G APTGF25DDA120T3G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 208W SP3
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APTGV75H60T3G
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP3
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APTGT20X60T3G APTGT20X60T3G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGT20H60T3G 7789-aptgt20h60t3g-datasheet
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGV100H60T3G
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP3
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APTGT20DSK60T3G 7787-aptgt20dsk60t3g-datasheet
Виробник: Microsemi Corporation
Description: IGBT MODULE 600V 32A 62W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Buck Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 62 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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APTGF15X120T3G APTGF15X120T3G.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 25A 140W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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MPLAD6.5KP130CA rf01083_rev_b.pdf
MPLAD6.5KP130CA
Виробник: Microsemi Corporation
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31.1A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
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1N5524B (DO35) 123956-lds-0037-1-datasheet
1N5524B (DO35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO35
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ZLR88822L
Виробник: Microsemi Corporation
Description: REFERENCE DESIGN ZL8882L
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DRF1202
Виробник: Microsemi Corporation
Description: IC PWR DRIVER N-CHANNEL 1:1
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DRF1203
Виробник: Microsemi Corporation
Description: IC PWR DRIVER N-CHANNEL 1:1
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P6KE47AE3/TR13 10895-sa4-59-datasheet
P6KE47AE3/TR13
Виробник: Microsemi Corporation
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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1N4683 (DO35) 125997-lds-0240-datasheet
1N4683 (DO35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 3V 500MW DO35
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SBR3050E3 8499-coc-93-datasheet
SBR3050E3
Виробник: Microsemi Corporation
Description: DIODE SCHOTTKY 50V 30A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 50 V
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2EZ47D5 11109-sd8a-datasheet
2EZ47D5
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 11109-sd8a-datasheet
2EZ47D5DO41E3
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5DO41E3 11109-sd8a-datasheet
2EZ47D5DO41E3
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR8 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5E3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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2EZ47D5E3/TR12 2EZ3.6D5-2EZ200DS,e3.pdf
2EZ47D5E3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 47V 2W DO204AL
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1N5916BG 10922-sa5-57-datasheet
1N5916BG
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR8 10922-sa5-57-datasheet
1N5916BP/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BE3/TR13 10922-sa5-57-datasheet
1N5916BE3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR12 10922-sa5-57-datasheet
1N5916BPE3/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BPE3/TR8 10922-sa5-57-datasheet
1N5916BPE3/TR8
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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1N5916BP/TR12 10922-sa5-57-datasheet
1N5916BP/TR12
Виробник: Microsemi Corporation
Description: DIODE ZENER 4.3V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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APTGF150SK120TG APTGF150SK120TG.pdf
Виробник: Microsemi Corporation
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
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S200-50 10768-s200-50reva-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS NPN 110V 30MHZ 55HX
Packaging: Bulk
Package / Case: 55HX
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 14.5dB
Power - Max: 320W
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 110V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.5MHz ~ 30MHz
Supplier Device Package: 55HX
Part Status: Obsolete
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APT33N90JCCU2
APT33N90JCCU2
Виробник: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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APT33N90JCCU3
APT33N90JCCU3
Виробник: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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1N5366B description 1N5333B-88B.pdf
1N5366B
Виробник: Microsemi Corporation
Description: DIODE ZENER 39V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 28.1 V
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APT11GF120KRG APT11GF120KR(G).pdf
APT11GF120KRG
Виробник: Microsemi Corporation
Description: IGBT 1200V 25A 156W TO220
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MAP5KE28CA 11043-p5ke-datasheet
MAP5KE28CA
Виробник: Microsemi Corporation
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MAP5KE28A 11043-p5ke-datasheet
MAP5KE28A
Виробник: Microsemi Corporation
Description: TVS DIODE 28VWM 45.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
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MAP5KE48A 11043-p5ke-datasheet
MAP5KE48A
Виробник: Microsemi Corporation
Description: TVS DIODE 48VWM 77.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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1N5223A (DO-35)TR 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5223A (DO-35)TR
Виробник: Microsemi Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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1N5223B (DO-35) 1N5221 - 1N5281B, e3 DO-35.pdf
1N5223B (DO-35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 2.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
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APT30SCD65B
Виробник: Microsemi Corporation
Description: DIODE SIL CARBIDE 650V 46A TO247
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 945pF @ 1V, 1MHz
Current - Average Rectified (Io): 46A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 600 µA @ 650 V
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MDS400 9482-mds400-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS NPN 55V 1.09GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6.5dB
Power - Max: 1450W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55KT
Part Status: Obsolete
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TAN300 11249-tan300-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.215GHZ 55KT
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TPR700 11280-tpr700reva-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55KT
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DME500 8602-dme500-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS NPN 55V 1.15GHZ 55KT
Packaging: Bulk
Package / Case: 55KT
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 6dB ~ 6.5dB
Power - Max: 1700W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 55V
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55KT
Part Status: Obsolete
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1214-110M 5710-1214-110m-rev1-2-datasheet
Виробник: Microsemi Corporation
Description: RF TRANS NPN 75V 1.4GHZ 55KT
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1N4116 (DO35) 129734-lds-0245-2-datasheet
1N4116 (DO35)
Виробник: Microsemi Corporation
Description: DIODE ZENER 24V 400MW DO35
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ZL30347GGG
ZL30347GGG
Виробник: Microsemi Corporation
Description: IC PLL IEEE SYNCH 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 622.08MHz
Input: Clock
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH
Ratio - Input:Output: 1:13
Differential - Input:Output: No/Yes
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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ZL30321GGG
ZL30321GGG
Виробник: Microsemi Corporation
Description: IC NETWORK SYNCHRONIZE 100LFBGA
Packaging: Tray
Package / Case: 100-FBGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 125MHz
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C
Main Purpose: Ethernet, SONET/SDH/PDH, Telecom
Ratio - Input:Output: 11:9
Differential - Input:Output: No/No
Supplier Device Package: 100-CABGA (9x9)
PLL: Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
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MSDM75-16 MSDM75.pdf
MSDM75-16
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 75A M2-1
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MS2212 index.php?option=com_docman&task=doc_download&gid=9630
Виробник: Microsemi Corporation
Description: RF TRANS NPN 55V 1.215GHZ M222
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WIN867W6NHEI-350A1
Виробник: Microsemi Corporation
Description: WINPATH2 867W6 PROC 350MHZ LF
Packaging: Tray
Interface: Ethernet, PCI, SPI, USB
Applications: Network Processor
Core Processor: MIPS32® 24Kc™
Part Status: Active
DigiKey Programmable: Not Verified
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2C2329
Виробник: Microsemi Corporation
Description: SCR SILICON CTRL RECTIFIER
Packaging: Bulk
Part Status: Obsolete
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SMBJ5378B/TR13 124875-lds-0246-2-datasheet
SMBJ5378B/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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SMBJ5378BE3/TR13 124875-lds-0246-2-datasheet
SMBJ5378BE3/TR13
Виробник: Microsemi Corporation
Description: DIODE ZENER 100V 5W SMBJ
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 100 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SMBJ (DO-214AA)
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 72 V
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MSD100-08 10532-msd100-rev1-datasheet
MSD100-08
Виробник: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 100A M3
Packaging: Bulk
Package / Case: SM3-20H
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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A3PE3000-FG324 130701-ds0098-proasic3e-flash-family-fpgas-datasheet
Виробник: Microsemi Corporation
Description: IC FPGA 221 I/O 324FBGA
Packaging: Tray
Package / Case: 324-BGA
Mounting Type: Surface Mount
Number of Gates: 3000000
Operating Temperature: 0°C ~ 85°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 324-FBGA (19x19)
Total RAM Bits: 516096
Part Status: Active
Number of I/O: 221
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