Виробник: IXYS
MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET

Транзистори > Польові N-канальні

Виробник: Littelfuse
RF Power MOSFET

Виробник: Littelfuse
Trans RF FET N-CH 1000V 24A 6-Pin

Виробник: IXYS-RF
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 24A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 1000 V

Виробник: Littelfuse
Trans MOSFET N-CH 500V 48A 6-Pin

Виробник: IXYS-RF
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 20A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 1000 V

Виробник: IXYS-RF
Description: RF MOSFET DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 48A
Configuration: N-Channel
Power - Output: 1800W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE475
Voltage - Rated: 500 V

Виробник: IXYS-RF
Description: RF MOSFET DE375
Packaging: Tube
Package / Case: 6-SMD, Flat Lead Exposed Pad
Current Rating (Amps): 25A
Frequency: 50MHz
Configuration: N-Channel
Power - Output: 940W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: DE375
Voltage - Rated: 500 V

Виробник: IXYS-RF
Description: IXRFD630 DE-375/DE-475 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD630
Type: MOSFET Driver
Supplied Contents: Board(s)

Виробник: Littelfuse
DE375/DE475 MOSFET Development Board

Виробник: IXYS-RF
Description: IXRFD631 DE-375/DE-475 DEV BOARD
Packaging: Bulk
For Use With/Related Products: IXRFD631
Type: MOSFET Driver
Supplied Contents: Board(s)

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet

Виробник: IXYS
Description: MOSFET N-CH 250V 100A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 445W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V

Виробник: IXYS
MOSFET DiscMSFT NChTrenchGate-Gen1 DE475

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 420A; 600W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 420A
Power dissipation: 600W
Case: DE475
On-state resistance: 1.6mΩ
Mounting: SMD
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet

Виробник: IXYS
Description: MOSFET N-CH 75V 465A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 465A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: DE475
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 545 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41000 pF @ 25 V

Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 550A; 600W; DE475; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Power dissipation: 600W
Case: DE475
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 595nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns

Виробник: IXYS
Description: MOSFET N-CH 55V 550A DE475
Packaging: Tube
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DE475
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V

Виробник: IXYS
MOSFET 550Amps 55V