Продукція > A3I
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| A3I20D040WGNR1 | NXP USA Inc. | Description: AIRFAST RF LDMOS WIDEBAND INTEGR | товар відсутній | |||||||||||||||
| A3I20D040WNR1 | NXP USA Inc. | Description: AIRFAST RF LDMOS WIDEBAND INTEGR | товар відсутній | |||||||||||||||
| A3I20X050GNR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I20X050GNR1 | NXP USA Inc. | Description: AIRFAST RF LDMOS WIDEBAND INTEGR Packaging: Tape & Reel (TR) Package / Case: OM-400G-8 Current Rating (Amps): 10µA Mounting Type: Surface Mount Frequency: 1.8GHz ~ 2.2GHz Configuration: Dual Voltage - Supply: 20V ~ 32V Power - Output: 6.3W Gain: 29.3dB Technology: LDMOS Supplier Device Package: OM-400G-8 Part Status: Active Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 145 mA | товар відсутній | |||||||||||||||
| A3I20X050GNR3 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I20X050NR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I20X050NR1 | NXP USA Inc. | Description: AIRFAST RF LDMOS WIDEBAND INTEGR Packaging: Tape & Reel (TR) Package / Case: OM-400-8 Current Rating (Amps): 10µA Mounting Type: Surface Mount Frequency: 1.8GHz ~ 2.2GHz Configuration: Dual Voltage - Supply: 20V ~ 32V Power - Output: 6.3W Gain: 29.3dB Technology: LDMOS Supplier Device Package: OM-400-8 Part Status: Active Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 145 mA | товар відсутній | |||||||||||||||
| A3I20X050NR3 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1800-2200 MHz, 6.3 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I25D080GNR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 2300-2690 MHz, 8.3 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I25D080NR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 2300-2690 MHz, 8.3 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I25X050GNR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 2300-2700 MHz, 5.6 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I25X050GNR1 | NXP USA Inc. | Description: RF MOSFET LDMOS 28V OM400G-8 Packaging: Tape & Reel (TR) Package / Case: OM-400G-8 Current Rating (Amps): 10µA Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.7GHz Configuration: 2 N-Channel Power - Output: 5.6W Technology: LDMOS (Dual) Supplier Device Package: OM-400G-8 Part Status: Active Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 130 mA Gain: 28.8dB @ 3.84GHz | товар відсутній | |||||||||||||||
| A3I25X050NR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Integrated Power Amplifier, 2300-2700 MHz, 5.6 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I25X050NR1 | NXP USA Inc. | Description: RF MOSFET LDMOS 28V OM400-8 Packaging: Tape & Reel (TR) Package / Case: OM-400-8 Current Rating (Amps): 10µA Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.7GHz Configuration: 2 N-Channel Power - Output: 5.6W Technology: LDMOS (Dual) Supplier Device Package: OM-400-8 Part Status: Active Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 130 mA Gain: 28.8dB @ 2.59GHz | товар відсутній | |||||||||||||||
| A3I35D012WGNR1 | NXP USA Inc. | Description: AIRFAST RF LDMOS WIDEBAND INTEGR | товар відсутній | |||||||||||||||
| A3I35D012WGNR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 1.8 W Avg., 28 V | товар відсутній | |||||||||||||||
| A3I35D012WNR1 | NXP Semiconductors | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 1.8 W Avg., 28 V | на замовлення 397 шт: термін постачання 21-30 дні (днів) | |||||||||||||||
| A3I35D012WNR1 | NXP Semiconductors | Description: A3I35D012 - Airfast RF LDMOS Wid Packaging: Bulk Package / Case: TO-270-17 Variant, Flat Leads Current Rating (Amps): 10µA Mounting Type: Surface Mount Frequency: 3.2GHz ~ 4GHz Configuration: 2 N-Channel Power - Output: 1.8W Gain: 27.8dB Technology: LDMOS (Dual) Supplier Device Package: TO-270WB-17 Voltage - Rated: 65 V Voltage - Test: 28 V Current - Test: 138 mA | на замовлення 396 шт: термін постачання 21-31 дні (днів) |
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| A3I35D025WGNR1 | NXP USA Inc. | Description: AIRFAST RF LDMOS WIDEBAND INTEGR | товар відсутній | |||||||||||||||
| A3I35D025WGNR1 | NXP Semiconductors | RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V | товар відсутній | |||||||||||||||
| A3I35D025WNR1 | NXP Semiconductors | RF Amp Dual Power Amp 4GHz 32V 19-Pin(17+2Tab) TO-270 WB EP T/R | товар відсутній | |||||||||||||||
| A3I35D025WNR1 | NXP USA Inc. | Description: IC AMP GPS 3.2GHZ-4GHZ TO270WB Packaging: Cut Tape (CT) Package / Case: TO-270-17 Variant, Flat Leads Mounting Type: Surface Mount Frequency: 3.2GHz ~ 4GHz RF Type: General Purpose Voltage - Supply: 28V Gain: 30.5dB P1dB: 42.6dBm Test Frequency: 3.8GHz ~ 4GHz Supplier Device Package: TO-270WB-17 Part Status: Active | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| A3I35D025WNR1 | NXP Semiconductors | RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V | на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| A3I35D025WNR1 | NXP USA Inc. | Description: IC AMP GPS 3.2GHZ-4GHZ TO270WB Packaging: Tape & Reel (TR) Package / Case: TO-270-17 Variant, Flat Leads Mounting Type: Surface Mount Frequency: 3.2GHz ~ 4GHz RF Type: General Purpose Voltage - Supply: 28V Gain: 30.5dB P1dB: 42.6dBm Test Frequency: 3.8GHz ~ 4GHz Supplier Device Package: TO-270WB-17 Part Status: Active | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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