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FQN1N50Consemi / FairchildMOSFET QFC 500V 6.0OHM TO92
товар відсутній
FQN1N50CBUFairchild SemiconductorDescription: MOSFET N-CH 500V 380MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
на замовлення 1254 шт:
термін постачання 21-31 дні (днів)
1254+15.73 грн
Мінімальне замовлення: 1254
FQN1N50CBUonsemi / FairchildMOSFET N-CH/400V/5 A/.75OHM
товар відсутній
FQN1N50CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
кількість в упаковці: 2000 шт
товар відсутній
FQN1N50CTAonsemiDescription: MOSFET N-CH 500V 380MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
на замовлення 3302 шт:
термін постачання 21-31 дні (днів)
8+39.04 грн
10+ 32.61 грн
100+ 22.54 грн
500+ 17.67 грн
1000+ 15.04 грн
Мінімальне замовлення: 8
FQN1N50CTAonsemi / FairchildMOSFET N-CH/500V 0.38A/6OHM
на замовлення 2181 шт:
термін постачання 21-30 дні (днів)
9+37.74 грн
10+ 36.6 грн
100+ 22.05 грн
500+ 18.44 грн
1000+ 15.68 грн
2000+ 13.91 грн
4000+ 13.12 грн
Мінімальне замовлення: 9
FQN1N50CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
товар відсутній
FQN1N50CTAON SemiconductorTrans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Fan-Fold
товар відсутній
FQN1N50CTAON SemiconductorTrans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Fan-Fold
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
FQN1N50CTAonsemiDescription: MOSFET N-CH 500V 380MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
товар відсутній
FQN1N50CTAONSEMIDescription: ONSEMI - FQN1N50CTA - Leistungs-MOSFET, n-Kanal, 500 V, 380 mA, 4.6 ohm, TO-226AA, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 380mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 890mW
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 890mW
Bauform - Transistor: TO-226AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 4.6ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.6ohm
SVHC: No SVHC (14-Jun-2023)
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
19+40.49 грн
21+ 35.85 грн
100+ 27.53 грн
500+ 16.2 грн
Мінімальне замовлення: 19
FQN1N50CTAON SemiconductorTrans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Fan-Fold
товар відсутній
FQN1N60CBUON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Bulk
товар відсутній
FQN1N60CBUonsemiDescription: MOSFET N-CH 600V 300MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
товар відсутній
FQN1N60CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
товар відсутній
FQN1N60CTAonsemiDescription: MOSFET N-CH 600V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
2000+13.09 грн
6000+ 11.96 грн
10000+ 11.11 грн
Мінімальне замовлення: 2000
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
товар відсутній
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
товар відсутній
FQN1N60CTAonsemiDescription: MOSFET N-CH 600V 300MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 1384 шт:
термін постачання 21-31 дні (днів)
8+39.04 грн
10+ 31.92 грн
100+ 22.22 грн
500+ 16.28 грн
1000+ 13.23 грн
Мінімальне замовлення: 8
FQN1N60CTAFairchild SemiconductorDescription: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
на замовлення 80002 шт:
термін постачання 21-31 дні (днів)
1461+13.62 грн
Мінімальне замовлення: 1461
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
товар відсутній
FQN1N60CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
FQN1N60CTAonsemi / FairchildMOSFET 600V NCH MOSFET
на замовлення 17559 шт:
термін постачання 21-30 дні (днів)
7+49 грн
10+ 40 грн
100+ 25.46 грн
500+ 20.87 грн
Мінімальне замовлення: 7
FQNL1N50Bonsemi / FairchildMOSFET
товар відсутній
FQNL1N50BBUonsemi / FairchildMOSFET 500V Single
товар відсутній
FQNL1N50BBUonsemiDescription: MOSFET N-CH 500V 270MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 135mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товар відсутній
FQNL1N50BBU_Qonsemi / FairchildMOSFET
товар відсутній
FQNL1N50BTAON SemiconductorTrans MOSFET N-CH 500V 0.27A 3-Pin TO-92L Ammo
товар відсутній
FQNL1N50BTAonsemi / FairchildMOSFET 500V N-Channel QFET
товар відсутній
FQNL1N50BTAonsemiDescription: MOSFET N-CH 500V 270MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 135mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
товар відсутній
FQNL2N50Bonsemi / FairchildMOSFET QF 500V 5.3OHM TO92L
товар відсутній
FQNL2N50BBUonsemiDescription: MOSFET N-CH 500V 350MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товар відсутній
FQNL2N50BBUonsemi / FairchildMOSFET 500V Single
товар відсутній
FQNL2N50BBU_Qonsemi / FairchildMOSFET 500V Single
товар відсутній
FQNL2N50BTAonsemiDescription: MOSFET N-CH 500V 350MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товар відсутній
FQNL2N50BTAFairchild
на замовлення 24000 шт:
термін постачання 14-28 дні (днів)
FQNL2N50BTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Power dissipation: 1.5W
Mounting: THT
Kind of package: Ammo Pack
Case: TO92L
Polarisation: unipolar
Gate charge: 8nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.4A
Drain-source voltage: 500V
Drain current: 0.22A
On-state resistance: 5.3Ω
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
FQNL2N50BTAonsemiDescription: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
товар відсутній
FQNL2N50BTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Power dissipation: 1.5W
Mounting: THT
Kind of package: Ammo Pack
Case: TO92L
Polarisation: unipolar
Gate charge: 8nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 1.4A
Drain-source voltage: 500V
Drain current: 0.22A
On-state resistance: 5.3Ω
Type of transistor: N-MOSFET
товар відсутній
FQNL2N50BTAonsemi / FairchildMOSFET 500V N-Channel QFET
товар відсутній
FQNL2N50BTAON SemiconductorTrans MOSFET N-CH 500V 0.35A 3-Pin TO-92L Fan-Fold
товар відсутній
FQNL2N50BTAFAIRCHILD2003 TO-92L
на замовлення 5000 шт:
термін постачання 14-28 дні (днів)
FQNL2N50BTA_NLonsemi / FairchildMOSFET N-CH/500V/0.64A/5.3OHM
товар відсутній