Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (30503) > Сторінка 251 з 509
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BC856AQCZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BC856AQCZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 4950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
74AHCT1G79GW125 | Nexperia USA Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
74AUP1G80GF132 | Nexperia USA Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
74LVC1G80GM,115 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 6-XFDFN Output Type: Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 200 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 400 MHz Input Capacitance: 5 pF Supplier Device Package: 6-XSON (1.45x1) Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 155000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BQCZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BQCZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 22184 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BC856BQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BC856BQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Qualification: AEC-Q101 |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PZU7.5B,115 | Nexperia USA Inc. |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323F Grade: Automotive Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PZU7.5B,115 | Nexperia USA Inc. |
![]() Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323F Grade: Automotive Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V Qualification: AEC-Q100 |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PMEG4005ESF315 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PMEG4005EGW,115 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PMEG4005EH/6X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 43pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PSMN1R5-50YLHX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PSMN1R5-50YLHX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
на замовлення 4169 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PSMN1R2-55SLHAX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PSMN1R2-55SLHAX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PSMN1R2-55SLH | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PSMN1R2-55SLH | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PSMN1R2-25YLD,115 | Nexperia USA Inc. | Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PSMN1R7-25YLD115 | Nexperia USA Inc. |
![]() Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
PSMN1R1-30EL,127 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74HCT10DB,112 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
на замовлення 4056 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PXP6R1-30QLJ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PXP6R1-30QLJ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
на замовлення 2294 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74AHCT1G125GF,132 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 6-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 6-XSON, SOT891 (1x1) Part Status: Obsolete |
на замовлення 130643 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74HC20PW118 | Nexperia USA Inc. | Description: IC GATE NAND 2CH 4-INP 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PUMT1 | Nexperia USA Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
PXN5R4-30QLJ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
PXN5R4-30QLJ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 32449 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BZX58550-C62-QX | Nexperia USA Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BZX58550-C62-QX | Nexperia USA Inc. |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BCV28,115 | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.3 W Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BCV28,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: SOT-89 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.3 W Qualification: AEC-Q101 |
на замовлення 515 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74LVC1G08GF/S500,1 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
на замовлення 245000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
74LVC1G08GM,115 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-XSON, SOT886 (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 4 µA |
на замовлення 2553 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PESD3USB30Z | Nexperia USA Inc. |
![]() |
на замовлення 17350 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
PESD3USB3S/CZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 15-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 15-WLCSP (2.37x1.17) Unidirectional Channels: 3 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
PESD2USB3S/CZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 10-WLCSP (1.57x1.17) Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PESD1USB3S/CZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.45pF @ 1MHz Current - Peak Pulse (10/1000µs): 8A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 5-WLCSP (0.77x1.17) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BZB84-B47,215 | Nexperia USA Inc. |
![]() Tolerance: ±2% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 170 Ohms Supplier Device Package: SOT-23 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V |
на замовлення 9273 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BZB84-C4V3,215 | Nexperia USA Inc. |
![]() Tolerance: ±5% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23 Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 1 V |
на замовлення 168000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BZB84-B30,215 | Nexperia USA Inc. |
![]() Tolerance: ±2% Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: TO-236AB Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 21 V |
на замовлення 58251 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143ZQCZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143ZQCZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143XQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143XQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143EQB-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PDTA143EQB-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143ZQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143ZQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143EQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
PDTA143EQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143XQCZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143XQCZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143ZQB-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143ZQB-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143XQB-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
PDTA143XQB-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
BC856AQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
товару немає в наявності
В кошику
од. на суму грн.
BC856AQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 4950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 15.55 грн |
36+ | 8.98 грн |
100+ | 5.55 грн |
500+ | 3.81 грн |
1000+ | 3.36 грн |
2000+ | 2.97 грн |
74AHCT1G79GW125 |
![]() |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
товару немає в наявності
В кошику
од. на суму грн.
74AUP1G80GF132 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Description: IC FF D-TYPE SNGL 1BIT 6XSON
товару немає в наявності
В кошику
од. на суму грн.
74LVC1G80GM,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 155000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4661+ | 4.70 грн |
BC856BQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 2.83 грн |
10000+ | 2.45 грн |
15000+ | 2.31 грн |
BC856BQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 22184 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 15.55 грн |
36+ | 8.90 грн |
100+ | 5.55 грн |
500+ | 3.81 грн |
1000+ | 3.36 грн |
2000+ | 2.97 грн |
BC856BQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
BC856BQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 15.55 грн |
35+ | 9.22 грн |
100+ | 5.70 грн |
500+ | 3.92 грн |
1000+ | 3.45 грн |
2000+ | 3.06 грн |
PZU7.5B,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
PZU7.5B,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
29+ | 11.46 грн |
47+ | 6.78 грн |
100+ | 3.70 грн |
500+ | 3.36 грн |
1000+ | 3.26 грн |
PMEG4005ESF315 |
![]() |
Виробник: Nexperia USA Inc.
Description: NEXPERIA PMEG4005ESF - RECTIFIER
Packaging: Bulk
Part Status: Active
Description: NEXPERIA PMEG4005ESF - RECTIFIER
Packaging: Bulk
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7969+ | 3.10 грн |
PMEG4005EGW,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Packaging: Bulk
Part Status: Active
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
PMEG4005EH/6X |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
PSMN1R5-50YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 125.89 грн |
PSMN1R5-50YLHX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
на замовлення 4169 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 301.93 грн |
10+ | 191.63 грн |
100+ | 135.29 грн |
500+ | 116.04 грн |
PSMN1R2-55SLHAX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
товару немає в наявності
В кошику
од. на суму грн.
PSMN1R2-55SLHAX |
![]() |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
товару немає в наявності
В кошику
од. на суму грн.
PSMN1R2-55SLH |
![]() |
Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
товару немає в наявності
В кошику
од. на суму грн.
PSMN1R2-55SLH |
![]() |
Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 298.66 грн |
10+ | 258.44 грн |
100+ | 211.73 грн |
500+ | 169.15 грн |
1000+ | 142.65 грн |
PSMN1R2-25YLD,115 |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
товару немає в наявності
В кошику
од. на суму грн.
PSMN1R1-30EL,127 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
333+ | 73.64 грн |
74HCT10DB,112 |
![]() |
на замовлення 4056 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1293+ | 17.91 грн |
PXP6R1-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
PXP6R1-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
на замовлення 2294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 110.46 грн |
10+ | 66.97 грн |
100+ | 44.67 грн |
500+ | 32.95 грн |
1000+ | 30.06 грн |
74AHCT1G125GF,132 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
на замовлення 130643 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1880+ | 12.53 грн |
74HC20PW118 |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14TSSOP
Description: IC GATE NAND 2CH 4-INP 14TSSOP
товару немає в наявності
В кошику
од. на суму грн.
PUMT1 |
![]() |
Виробник: Nexperia USA Inc.
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
товару немає в наявності
В кошику
од. на суму грн.
PXN5R4-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.23 грн |
PXN5R4-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 32449 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 34.37 грн |
11+ | 28.84 грн |
100+ | 19.99 грн |
500+ | 15.69 грн |
1000+ | 14.66 грн |
BZX58550-C62-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Description: BZX58550-C62-Q/SOD523/SC-79
товару немає в наявності
В кошику
од. на суму грн.
BZX58550-C62-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Description: BZX58550-C62-Q/SOD523/SC-79
товару немає в наявності
В кошику
од. на суму грн.
BCV28,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
BCV28,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Qualification: AEC-Q101
на замовлення 515 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 56.46 грн |
10+ | 33.72 грн |
100+ | 21.69 грн |
500+ | 15.48 грн |
74LVC1G08GF/S500,1 |
![]() |
на замовлення 245000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
720+ | 31.33 грн |
74LVC1G08GM,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
на замовлення 2553 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 15.55 грн |
31+ | 10.24 грн |
35+ | 9.05 грн |
100+ | 7.25 грн |
250+ | 6.65 грн |
500+ | 6.30 грн |
1000+ | 5.90 грн |
2500+ | 5.72 грн |
PESD3USB30Z |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 15WLCSP
Description: TVS DIODE 5.5VWM 15WLCSP
на замовлення 17350 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1159+ | 20.22 грн |
PESD3USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 15-WLCSP (2.37x1.17)
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 15WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 15-WLCSP (2.37x1.17)
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
PESD2USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
PESD1USB3S/CZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
BZB84-B47,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 47V SOT-23
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
Description: DIODE ZENER ARRAY 47V SOT-23
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 170 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 32.9 V
на замовлення 9273 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9273+ | 2.26 грн |
BZB84-C4V3,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 4.3V SOT-23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Description: DIODE ZENER ARRAY 4.3V SOT-23
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
на замовлення 168000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10764+ | 2.26 грн |
BZB84-B30,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER ARRAY 30V TO-236AB
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
Description: DIODE ZENER ARRAY 30V TO-236AB
Tolerance: ±2%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 21 V
на замовлення 58251 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9616+ | 2.26 грн |
PDTA143ZQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.20 грн |
PDTA143ZQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.18 грн |
32+ | 10.09 грн |
100+ | 6.26 грн |
500+ | 4.31 грн |
1000+ | 3.79 грн |
2000+ | 3.36 грн |
PDTA143XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.05 грн |
PDTA143XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.18 грн |
32+ | 10.01 грн |
100+ | 6.19 грн |
500+ | 4.26 грн |
1000+ | 3.75 грн |
2000+ | 3.33 грн |
PDTA143EQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
PDTA143EQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.18 грн |
32+ | 9.85 грн |
100+ | 6.09 грн |
500+ | 4.19 грн |
1000+ | 3.69 грн |
2000+ | 3.28 грн |
PDTA143ZQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.05 грн |
PDTA143ZQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.18 грн |
32+ | 10.01 грн |
100+ | 6.19 грн |
500+ | 4.26 грн |
1000+ | 3.75 грн |
2000+ | 3.33 грн |
PDTA143EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
PDTA143EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.18 грн |
32+ | 10.01 грн |
100+ | 6.19 грн |
500+ | 4.26 грн |
1000+ | 3.75 грн |
2000+ | 3.33 грн |
PDTA143XQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.05 грн |
PDTA143XQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.36 грн |
33+ | 9.61 грн |
100+ | 5.97 грн |
500+ | 4.10 грн |
1000+ | 3.62 грн |
2000+ | 3.20 грн |
PDTA143ZQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.19 грн |
PDTA143ZQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.18 грн |
32+ | 10.01 грн |
100+ | 6.23 грн |
500+ | 4.29 грн |
1000+ | 3.78 грн |
2000+ | 3.35 грн |
PDTA143XQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.12 грн |
PDTA143XQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.18 грн |
32+ | 9.85 грн |
100+ | 6.09 грн |
500+ | 4.19 грн |
1000+ | 3.69 грн |
2000+ | 3.27 грн |