Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (32043) > Сторінка 251 з 535
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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PMEG120G20ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD123W Qualification: AEC-Q101 Grade: Automotive Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 75pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 11 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 30 nA @ 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMEG120G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 1A SOD123W Qualification: AEC-Q101 Grade: Automotive Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 30 nA @ 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 36pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 12 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PMEG120G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 36pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
на замовлення 2084 шт: термін постачання 21-31 дні (днів) |
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PMEG100T30ELPX | Nexperia USA Inc. |
Description: DIODE SCHOTT 100V 3A SOD128/CFP5Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.5 ns Technology: Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PMEG150G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PMEG150G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 2A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
на замовлення 2857 шт: термін постачання 21-31 дні (днів) |
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| PMEG120G30ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 103pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PMEG120G30ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 3A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 103pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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PMEG100T10ELXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 1A SOD323HPPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 95pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD323HP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 100 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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PMEG100T10ELXDX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 100V 1A SOD323HPPackaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Technology: Schottky Capacitance @ Vr, F: 95pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD323HP Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 100 V |
на замовлення 29728 шт: термін постачання 21-31 дні (днів) |
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PMEG150G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 34pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PMEG150G10ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 150V 1A SOD123W Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 34pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
на замовлення 1005 шт: термін постачання 21-31 дні (днів) |
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| PMEG120G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PMEG120G20ELP-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD128/CFP5 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 75pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 120 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX84-C3V6/DG/B4R | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84-C3V6/DG/B3:2 | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236ABTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: TO-236AB Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84-C3V6/DG/B3,2 | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BZX84-C3V6/DG/B4VL | Nexperia USA Inc. |
Description: DIODE ZENER 3.6V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BUK961R5-30E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 324W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 93.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 14.5 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4767 шт: термін постачання 21-31 дні (днів) |
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74HC4852BQ-Q100115 | Nexperia USA Inc. |
Description: NEXPERIA 74HC4852BQ-Q100 - SINGL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PMEG6020ETR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.5 ns Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| PMEG6020AELP-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 ns Technology: Schottky Capacitance @ Vr, F: 220pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Current - Reverse Leakage @ Vr: 700 nA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PMEG6020ETP-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8.6 ns Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PMEG6020ELR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5 ns Technology: Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A Current - Reverse Leakage @ Vr: 300 nA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PMEG6020AELR-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 ns Technology: Schottky Capacitance @ Vr, F: 220pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Current - Reverse Leakage @ Vr: 700 nA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| PMEG6020ER-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 60V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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| PMEG6020EP-QX | Nexperia USA Inc. |
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5 Packaging: Tape & Reel (TR) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 240pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
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PDTC124EQAZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 280 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 85000 шт: термін постачання 21-31 дні (днів) |
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PZU9.1B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 310MW SOD323F |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PZU9.1B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 310MW SOD323F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PZU9.1B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 9.1V 310MW SOD323F |
на замовлення 141000 шт: термін постачання 21-31 дні (днів) |
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74CBTLV3126BQ115 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74CBTLV3126BQ - BUS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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74CBTLV3126PW-Q100118 | Nexperia USA Inc. |
Description: BUS DRIVER, CBT SERIES |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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74HC2GU04GW | Nexperia USA Inc. |
Description: IC INVERTER 2CH 2-INP 6TSSOP |
товару немає в наявності |
Мінімальне замовлення: 2666 шт В кошику од. на суму грн. | ||||||||||||
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PMPB16R5XNEX | Nexperia USA Inc. |
Description: PMPB16R5XNE - 30 V, N-CHANNEL TRPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
на замовлення 5461 шт: термін постачання 21-31 дні (днів) |
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PMPB16R5XNEX | Nexperia USA Inc. |
Description: PMPB16R5XNE - 30 V, N-CHANNEL TRPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
на замовлення 7712 шт: термін постачання 21-31 дні (днів) |
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PMPB12R7EPX | Nexperia USA Inc. |
Description: PMPB12R7EP - 30 V, P-CHANNEL TREPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PMPB12R7EPX | Nexperia USA Inc. |
Description: PMPB12R7EP - 30 V, P-CHANNEL TREPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V |
на замовлення 3778 шт: термін постачання 21-31 дні (днів) |
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BZX884S-C4V7-QYL | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR IN DFN PACK |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||
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74LV4051PW | Nexperia USA Inc. |
Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BUK9MHH-65PNN,518 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 65V 15A 20SO Part Status: Obsolete Supplier Device Package: 20-SO Vgs(th) (Max) @ Id: 2V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 65V Power - Max: 5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PZU2.7B2,115 | Nexperia USA Inc. |
Description: DIODE ZENER 2.7V 310MW SOD323FTolerance: ±2% Packaging: Bulk Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.7 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: SOD-323F Grade: Automotive Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 20 µA @ 1 V Qualification: AEC-Q100 |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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74LVC2G240GF,115 | Nexperia USA Inc. |
Description: IC BUFFER INVERTING 5.5V 8-XSONPackaging: Bulk Package / Case: 8-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-XSON (1.35x1) Part Status: Last Time Buy |
на замовлення 112920 шт: термін постачання 21-31 дні (днів) |
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PZU4.3B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 4.3V 310MW SOD323FCurrent - Reverse Leakage @ Vr: 3 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 310 mW Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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PZU4.3B1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 4.3V 310MW SOD323FCurrent - Reverse Leakage @ Vr: 3 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 310 mW Supplier Device Package: SOD-323F Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±2% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NZX5V6A,133 | Nexperia USA Inc. |
Description: DIODE ZENER 5.35V 500MW ALF2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.35 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: ALF2 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 3924 шт: термін постачання 21-31 дні (днів) |
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PMN230ENEX | Nexperia USA Inc. |
Description: PMN230ENE - 60 V, N-CHANNEL TREN |
товару немає в наявності |
Мінімальне замовлення: 7416 шт В кошику од. на суму грн. | ||||||||||||
| PMN40UPE,115-NEX | Nexperia USA Inc. | Description: TRANSISTOR |
товару немає в наявності |
Мінімальне замовлення: 1316 шт В кошику од. на суму грн. | |||||||||||||
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74ALVT16823DGGS | Nexperia USA Inc. |
Description: IC FF D-TYPE DUAL 9BIT 56TSSOPPackaging: Tube Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 2 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Current - Quiescent (Iq): 100 µA Current - Output High, Low: 8mA, 24mA; 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 250 MHz Input Capacitance: 3 pF Supplier Device Package: 56-TSSOP Max Propagation Delay @ V, Max CL: 3.1ns @ 3.3V, 50pF Number of Bits per Element: 9 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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74ALVT16821DGGS | Nexperia USA Inc. |
Description: IC FF D-TYPE DUAL 10BIT 56TSSOPPackaging: Tube Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 2 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V Current - Quiescent (Iq): 70 µA Current - Output High, Low: 8mA, 24mA; 32mA, 64mA Trigger Type: Positive Edge Clock Frequency: 150 MHz Input Capacitance: 3 pF Supplier Device Package: 56-TSSOP Max Propagation Delay @ V, Max CL: 3.2ns @ 3.3V, 50pF Number of Bits per Element: 10 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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74LVC2G34GF | Nexperia USA Inc. |
Description: DUAL BUFFER GATEPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| 74LVC2G34GW | Nexperia USA Inc. |
Description: BUFFER, LVC/LCX/Z SERIES, 2-FUNC Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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74LVC1G58GF,132 | Nexperia USA Inc. |
Description: IC MF CFG 1-CIR 3-IN 6XSONPackaging: Bulk Package / Case: 6-XFDFN Output Type: Single-Ended Mounting Type: Surface Mount Logic Type: Configurable Multiple Function Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Schmitt Trigger Input: Yes Supplier Device Package: 6-XSON, SOT891 (1x1) Number of Circuits: 1 |
на замовлення 7660 шт: термін постачання 21-31 дні (днів) |
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PESD2USB3B/CZ | Nexperia USA Inc. |
Description: TVS DIODE 4VWM 10WLCSPPackaging: Tape & Reel (TR) Package / Case: 10-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.29pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.5A (8/20µs) Voltage - Reverse Standoff (Typ): 4V (Max) Supplier Device Package: 10-WLCSP (1.57x1.17) Bidirectional Channels: 2 Voltage - Breakdown (Min): 6V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PESD1USB3B/CZ | Nexperia USA Inc. |
Description: TVS DIODE 4VWM 5WLCSPPackaging: Tape & Reel (TR) Package / Case: 5-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TA) Applications: HDMI, USB Capacitance @ Frequency: 0.29pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.5A (8/20µs) Voltage - Reverse Standoff (Typ): 4V (Max) Supplier Device Package: 5-WLCSP (0.77x1.17) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PESD3USB3B/CZ | Nexperia USA Inc. | Description: TVS DIODE 4VWM 3.7VC DSN0603-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SZMM3Z4V3T1GX | Nexperia USA Inc. |
Description: SZMM3Z4V3T1G/SOD323/SOD2Current - Reverse Leakage @ Vr: 3 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SZMM3Z4V3T1GX | Nexperia USA Inc. |
Description: SZMM3Z4V3T1G/SOD323/SOD2Current - Reverse Leakage @ Vr: 3 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 300 mW Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 90 Ohms Voltage - Zener (Nom) (Vz): 4.3 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 11870 шт: термін постачання 21-31 дні (днів) |
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BUK9Y22-60ELX | Nexperia USA Inc. |
Description: SINGLE N-CHANNEL 60 V, 15 MOHM LPackaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK9Y22-60ELX | Nexperia USA Inc. |
Description: SINGLE N-CHANNEL 60 V, 15 MOHM LPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2927 шт: термін постачання 21-31 дні (днів) |
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| PMEG120G20ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Description: DIODE SIGE 120V 2A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
товару немає в наявності
В кошику
од. на суму грн.
| PMEG120G10ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 1A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Description: DIODE SIGE 120V 1A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 12 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
товару немає в наявності
В кошику
од. на суму грн.
| PMEG120G10ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
на замовлення 2084 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 41.16 грн |
| 13+ | 24.60 грн |
| 50+ | 17.81 грн |
| 100+ | 14.64 грн |
| PMEG100T30ELPX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.18 грн |
| 6000+ | 13.87 грн |
| PMEG150G20ELP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG150G20ELP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
на замовлення 2857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.69 грн |
| 10+ | 33.73 грн |
| 50+ | 24.62 грн |
| 100+ | 20.33 грн |
| PMEG120G30ELP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| PMEG120G30ELP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| PMEG100T10ELXDX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4500+ | 5.24 грн |
| 9000+ | 4.57 грн |
| 13500+ | 4.33 грн |
| 22500+ | 3.81 грн |
| PMEG100T10ELXDX |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
на замовлення 29728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.41 грн |
| 20+ | 15.48 грн |
| 100+ | 9.71 грн |
| 500+ | 6.76 грн |
| 1000+ | 6.00 грн |
| 2000+ | 5.36 грн |
| PMEG150G10ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG150G10ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE SIGE 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
на замовлення 1005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.40 грн |
| 15+ | 20.19 грн |
| 100+ | 12.83 грн |
| 500+ | 9.04 грн |
| 1000+ | 8.07 грн |
| PMEG120G20ELP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG120G20ELP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Description: DIODE SIGE 120V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
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од. на суму грн.
| BZX84-C3V6/DG/B4R |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Description: DIODE ZENER 3.6V 250MW TO236AB
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В кошику
од. на суму грн.
| BZX84-C3V6/DG/B3:2 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: TO-236AB
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 3.6V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: TO-236AB
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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од. на суму грн.
| BZX84-C3V6/DG/B3,2 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Description: DIODE ZENER 3.6V 250MW TO236AB
товару немає в наявності
В кошику
од. на суму грн.
| BZX84-C3V6/DG/B4VL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Description: DIODE ZENER 3.6V 250MW TO236AB
товару немає в наявності
В кошику
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| BUK961R5-30E,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.5 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 93.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 14.5 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4767 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 118+ | 171.05 грн |
| 74HC4852BQ-Q100115 |
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Виробник: Nexperia USA Inc.
Description: NEXPERIA 74HC4852BQ-Q100 - SINGL
Description: NEXPERIA 74HC4852BQ-Q100 - SINGL
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В кошику
од. на суму грн.
| PMEG6020ETR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.17 грн |
| 6000+ | 6.26 грн |
| PMEG6020AELP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG6020ETP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.6 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.6 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG6020ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG6020AELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG6020ER-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.17 грн |
| 6000+ | 6.26 грн |
| 9000+ | 5.93 грн |
| 15000+ | 5.22 грн |
| PMEG6020EP-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE SCHOTTK 60V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PDTC124EQAZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 85000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3647+ | 5.45 грн |
| PZU9.1B1,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Description: DIODE ZENER 9.1V 310MW SOD323F
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PZU9.1B1,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Description: DIODE ZENER 9.1V 310MW SOD323F
товару немає в наявності
В кошику
од. на суму грн.
| PZU9.1B1,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Description: DIODE ZENER 9.1V 310MW SOD323F
на замовлення 141000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9584+ | 2.28 грн |
| 74CBTLV3126BQ115 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74CBTLV3126BQ - BUS
Description: NOW NEXPERIA 74CBTLV3126BQ - BUS
товару немає в наявності
В кошику
од. на суму грн.
| 74CBTLV3126PW-Q100118 |
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Виробник: Nexperia USA Inc.
Description: BUS DRIVER, CBT SERIES
Description: BUS DRIVER, CBT SERIES
товару немає в наявності
В кошику
од. на суму грн.
| 74HC2GU04GW |
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Виробник: Nexperia USA Inc.
Description: IC INVERTER 2CH 2-INP 6TSSOP
Description: IC INVERTER 2CH 2-INP 6TSSOP
товару немає в наявності
Мінімальне замовлення: 2666 шт
В кошику
од. на суму грн.
| PMPB16R5XNEX |
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Виробник: Nexperia USA Inc.
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
на замовлення 5461 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.39 грн |
| PMPB16R5XNEX |
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Виробник: Nexperia USA Inc.
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
на замовлення 7712 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.38 грн |
| 13+ | 24.53 грн |
| 100+ | 15.69 грн |
| 500+ | 11.14 грн |
| 1000+ | 9.98 грн |
| PMPB12R7EPX |
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Виробник: Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMPB12R7EPX |
![]() |
Виробник: Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
на замовлення 3778 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.36 грн |
| 10+ | 32.31 грн |
| 100+ | 20.78 грн |
| 500+ | 14.83 грн |
| 1000+ | 13.33 грн |
| BZX884S-C4V7-QYL |
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Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| 74LV4051PW |
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Виробник: Nexperia USA Inc.
Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC
Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC
товару немає в наявності
В кошику
од. на суму грн.
| BUK9MHH-65PNN,518 |
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 65V 15A 20SO
Part Status: Obsolete
Supplier Device Package: 20-SO
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 65V
Power - Max: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 65V 15A 20SO
Part Status: Obsolete
Supplier Device Package: 20-SO
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 65V
Power - Max: 5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| PZU2.7B2,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 310MW SOD323F
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q100
Description: DIODE ZENER 2.7V 310MW SOD323F
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q100
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3404+ | 6.02 грн |
| 74LVC2G240GF,115 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERTING 5.5V 8-XSON
Packaging: Bulk
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.35x1)
Part Status: Last Time Buy
Description: IC BUFFER INVERTING 5.5V 8-XSON
Packaging: Bulk
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.35x1)
Part Status: Last Time Buy
на замовлення 112920 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 564+ | 35.42 грн |
| PZU4.3B1,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 310MW SOD323F
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 310 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 4.3V 310MW SOD323F
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 310 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PZU4.3B1,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.3V 310MW SOD323F
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 310 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 4.3V 310MW SOD323F
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 310 mW
Supplier Device Package: SOD-323F
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
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| NZX5V6A,133 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.35V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.35 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.35V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.35 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 3924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.98 грн |
| 38+ | 8.00 грн |
| 100+ | 4.94 грн |
| 500+ | 3.37 грн |
| 1000+ | 2.96 грн |
| 2000+ | 2.62 грн |
| PMN230ENEX |
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Виробник: Nexperia USA Inc.
Description: PMN230ENE - 60 V, N-CHANNEL TREN
Description: PMN230ENE - 60 V, N-CHANNEL TREN
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Мінімальне замовлення: 7416 шт
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| PMN40UPE,115-NEX |
Виробник: Nexperia USA Inc.
Description: TRANSISTOR
Description: TRANSISTOR
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Мінімальне замовлення: 1316 шт
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| 74ALVT16823DGGS |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DUAL 9BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 100 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.1ns @ 3.3V, 50pF
Number of Bits per Element: 9
Description: IC FF D-TYPE DUAL 9BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 100 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 250 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.1ns @ 3.3V, 50pF
Number of Bits per Element: 9
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| 74ALVT16821DGGS |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE DUAL 10BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 70 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.2ns @ 3.3V, 50pF
Number of Bits per Element: 10
Description: IC FF D-TYPE DUAL 10BIT 56TSSOP
Packaging: Tube
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 2
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
Current - Quiescent (Iq): 70 µA
Current - Output High, Low: 8mA, 24mA; 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 3 pF
Supplier Device Package: 56-TSSOP
Max Propagation Delay @ V, Max CL: 3.2ns @ 3.3V, 50pF
Number of Bits per Element: 10
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| 74LVC2G34GW |
Виробник: Nexperia USA Inc.
Description: BUFFER, LVC/LCX/Z SERIES, 2-FUNC
Packaging: Bulk
Part Status: Active
Description: BUFFER, LVC/LCX/Z SERIES, 2-FUNC
Packaging: Bulk
Part Status: Active
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| 74LVC1G58GF,132 |
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Виробник: Nexperia USA Inc.
Description: IC MF CFG 1-CIR 3-IN 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-XSON, SOT891 (1x1)
Number of Circuits: 1
Description: IC MF CFG 1-CIR 3-IN 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 6-XSON, SOT891 (1x1)
Number of Circuits: 1
на замовлення 7660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1160+ | 17.70 грн |
| PESD2USB3B/CZ |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 4VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Description: TVS DIODE 4VWM 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V (Max)
Supplier Device Package: 10-WLCSP (1.57x1.17)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: No
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| PESD1USB3B/CZ |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 4VWM 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
Description: TVS DIODE 4VWM 5WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.29pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 4V (Max)
Supplier Device Package: 5-WLCSP (0.77x1.17)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power Line Protection: No
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| PESD3USB3B/CZ |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 4VWM 3.7VC DSN0603-2
Description: TVS DIODE 4VWM 3.7VC DSN0603-2
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| SZMM3Z4V3T1GX |
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Виробник: Nexperia USA Inc.
Description: SZMM3Z4V3T1G/SOD323/SOD2
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: SZMM3Z4V3T1G/SOD323/SOD2
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.25 грн |
| 6000+ | 2.90 грн |
| 9000+ | 2.41 грн |
| SZMM3Z4V3T1GX |
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Виробник: Nexperia USA Inc.
Description: SZMM3Z4V3T1G/SOD323/SOD2
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: SZMM3Z4V3T1G/SOD323/SOD2
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 300 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 11870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.42 грн |
| 24+ | 12.79 грн |
| 100+ | 6.23 грн |
| 500+ | 4.88 грн |
| 1000+ | 3.39 грн |
| BUK9Y22-60ELX |
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Виробник: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 26.25 грн |
| BUK9Y22-60ELX |
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Виробник: Nexperia USA Inc.
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
Description: SINGLE N-CHANNEL 60 V, 15 MOHM L
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2927 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 94.75 грн |
| 10+ | 56.99 грн |
| 100+ | 37.63 грн |
| 500+ | 27.52 грн |






























