Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (30842) > Сторінка 250 з 515
| Фото | Назва | Виробник | Інформація |
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| BUK92150-55A118 | Nexperia USA Inc. | Description: NOW NEXPERIA BUK92150-55A - POWE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX884-B20,315 | Nexperia USA Inc. |
Description: DIODE ZENER 20V 250MW DFN1006-2Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX884-B20,315 | Nexperia USA Inc. |
Description: DIODE ZENER 20V 250MW DFN1006-2Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 14 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 7955 шт: термін постачання 21-31 дні (днів) |
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74LVC3G34GM,125 | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 5.5V 8-XQFNPackaging: Bulk Package / Case: 8-XFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-XQFN (1.6x1.6) |
на замовлення 125375 шт: термін постачання 21-31 дні (днів) |
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74ALVCH16245DL,112 | Nexperia USA Inc. |
Description: IC TXRX NON-INVERT 3.6V 48SSOP |
на замовлення 1562 шт: термін постачання 21-31 дні (днів) |
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74ALVCH16501DGGS | Nexperia USA Inc. |
Description: IC UNIV BUS TXRX 18BIT 56TSSOPPackaging: Bulk Package / Case: 56-TFSOP (0.240", 6.10mm Width) Number of Circuits: 18-Bit Mounting Type: Surface Mount Logic Type: Universal Bus Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 24mA, 24mA Supplier Device Package: 56-TSSOP |
на замовлення 595 шт: термін постачання 21-31 дні (днів) |
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BZX884-C24,315 | Nexperia USA Inc. |
Description: DIODE ZENER 24V 250MW DFN1006-2Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX884-C24,315 | Nexperia USA Inc. |
Description: DIODE ZENER 24V 250MW DFN1006-2Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX38450-C5V1-QX | Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 300MW SOD323Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX38450-C5V1-QX | Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 300MW SOD323Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V Qualification: AEC-Q101 |
на замовлення 4371 шт: термін постачання 21-31 дні (днів) |
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IP4254CZ12-6-TTL,1 | Nexperia USA Inc. |
Description: FILTER RC(PI) 100 OHMS ESD SMDPackaging: Tape & Reel (TR) Package / Case: 12-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 30pF (Total) Height: 0.022" (0.55mm) Attenuation Value: 28dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: LAN, WAN Technology: RC (Pi) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 6 |
товару немає в наявності |
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| 74LVC2G14GW | Nexperia USA Inc. |
Description: INVERTER, LVC/LCX/Z SERIES, 2-FU Packaging: Bulk Part Status: Active Features: Schmitt Trigger Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-TSSOP Input Logic Level - High: 1.7V ~ 3.8V Input Logic Level - Low: 0.25V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2N7002KQBZ | Nexperia USA Inc. |
Description: 2N7002KQB/SOT8015/DFN1110D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 720mA (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V Power Dissipation (Max): 420mW (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: DFN1110D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002KQBZ | Nexperia USA Inc. |
Description: 2N7002KQB/SOT8015/DFN1110D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 720mA (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V Power Dissipation (Max): 420mW (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: DFN1110D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G32GXX | Nexperia USA Inc. |
Description: IC GATE OR 2CH 2-INP 8X2SONPackaging: Bulk Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 8-X2SON (1.35x0.8) Input Logic Level - High: 0.95V ~ 3.4V Input Logic Level - Low: 0.1V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 4 µA |
на замовлення 58353 шт: термін постачання 21-31 дні (днів) |
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| BZX84-C9V1/DG/B4VL | Nexperia USA Inc. |
Description: DIODE ZENER 9.05V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BZX84-C9V1/DG/B3:2 | Nexperia USA Inc. |
Description: DIODE ZENER 9.05V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PSMN057-200P,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 200V 39A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PXP011-20QXJ | Nexperia USA Inc. |
Description: PXP011-20QX/SOT8002/MLPAK33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PXP011-20QXJ | Nexperia USA Inc. |
Description: PXP011-20QX/SOT8002/MLPAK33 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V |
на замовлення 5875 шт: термін постачання 21-31 дні (днів) |
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BC856AQC-QZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856AQC-QZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856AQCZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856AQCZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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| 74AHCT1G79GW125 | Nexperia USA Inc. |
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 - |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AUP1G80GF132 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 1BIT 6XSON |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G80GM,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 1BIT 6XSONPackaging: Bulk Package / Case: 6-XFDFN Output Type: Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 200 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 400 MHz Input Capacitance: 5 pF Supplier Device Package: 6-XSON (1.45x1) Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 155000 шт: термін постачання 21-31 дні (днів) |
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BC856BQCZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856BQCZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW |
на замовлення 2184 шт: термін постачання 21-31 дні (днів) |
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BC856BQC-QZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856BQC-QZ | Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A DFN1412D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 360 mW Qualification: AEC-Q101 |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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PZU7.5B,115 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 310MW SOD323FTolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323F Grade: Automotive Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PZU7.5B,115 | Nexperia USA Inc. |
Description: DIODE ZENER 7.5V 310MW SOD323FTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323F Grade: Automotive Part Status: Active Power - Max: 310 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 4 V Qualification: AEC-Q100 |
на замовлення 2940 шт: термін постачання 21-31 дні (днів) |
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PMEG4005ESF315 | Nexperia USA Inc. |
Description: NEXPERIA PMEG4005ESF - RECTIFIERPackaging: Bulk Part Status: Active |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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PMEG4005EGW,115 | Nexperia USA Inc. |
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,Packaging: Bulk Part Status: Active |
товару немає в наявності |
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PMEG4005EH/6X | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 500MA SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 43pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN1R5-50YLHX | Nexperia USA Inc. |
Description: PSMN1R5-50YLH/SOT1023/4 LEADSPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN1R5-50YLHX | Nexperia USA Inc. |
Description: PSMN1R5-50YLH/SOT1023/4 LEADSPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V |
на замовлення 4169 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-55SLHAX | Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN1R2-55SLHAX | Nexperia USA Inc. |
Description: PSMN1R2-55SLH/SOT1235/LFPAK88Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tc) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN1R2-55SLH | Nexperia USA Inc. |
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 APackaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN1R2-55SLH | Nexperia USA Inc. |
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 APackaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Ta) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 375W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V |
на замовлення 1975 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-25YLD,115 | Nexperia USA Inc. | Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PSMN1R7-25YLD115 | Nexperia USA Inc. |
Description: NOW NEXPERIA PSMN1R7-25YLD - POWPackaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PSMN1R1-30EL,127 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A I2PAKPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
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74HCT10DB,112 | Nexperia USA Inc. |
Description: IC GATE NANDPackaging: Bulk Part Status: Active |
на замовлення 4056 шт: термін постачання 21-31 дні (днів) |
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PXP6R1-30QLJ | Nexperia USA Inc. |
Description: PXP6R1-30QL/SOT8002/MLPAK33Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PXP6R1-30QLJ | Nexperia USA Inc. |
Description: PXP6R1-30QL/SOT8002/MLPAK33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V Power Dissipation (Max): 1.8W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V |
на замовлення 2257 шт: термін постачання 21-31 дні (днів) |
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74AHCT1G125GF,132 | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 5.5V 6XSONPackaging: Bulk Package / Case: 6-XFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 6-XSON, SOT891 (1x1) Part Status: Obsolete |
на замовлення 130643 шт: термін постачання 21-31 дні (днів) |
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74HC20PW118 | Nexperia USA Inc. | Description: IC GATE NAND 2CH 4-INP 14TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PUMT1 | Nexperia USA Inc. |
Description: PUMT1 - PNP GENERAL PURPOSE DOUB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PXN5R4-30QLJ | Nexperia USA Inc. |
Description: PXN5R4-30QL/SOT8002/MLPAK33Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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PXN5R4-30QLJ | Nexperia USA Inc. |
Description: PXN5R4-30QL/SOT8002/MLPAK33Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V Power Dissipation (Max): 1.8W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: MLPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V |
на замовлення 32449 шт: термін постачання 21-31 дні (днів) |
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BZX58550-C62-QX | Nexperia USA Inc. |
Description: BZX58550-C62-Q/SOD523/SC-79 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX58550-C62-QX | Nexperia USA Inc. |
Description: BZX58550-C62-Q/SOD523/SC-79 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCV28,115 | Nexperia USA Inc. |
Description: TRANS PNP DARL 30V 0.5A SOT-89Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.3 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCV28,115 | Nexperia USA Inc. |
Description: TRANS PNP DARL 30V 0.5A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 220MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1.3 W Grade: Automotive Qualification: AEC-Q101 |
на замовлення 515 шт: термін постачання 21-31 дні (днів) |
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74LVC1G08GF/S500,1 | Nexperia USA Inc. |
Description: IC AND SNGL 2-INPPackaging: Bulk Part Status: Active |
на замовлення 245000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G08GM,115 | Nexperia USA Inc. |
Description: IC GATE AND 1CH 2-INP 6XSONPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-XSON, SOT886 (1.45x1) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 4 µA |
на замовлення 2553 шт: термін постачання 21-31 дні (днів) |
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PESD3USB30Z | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 15WLCSP |
на замовлення 17350 шт: термін постачання 21-31 дні (днів) |
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| BUK92150-55A118 |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA BUK92150-55A - POWE
Description: NOW NEXPERIA BUK92150-55A - POWE
товару немає в наявності
В кошику
од. на суму грн.
| BZX884-B20,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 20V 250MW DFN1006-2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 20V 250MW DFN1006-2
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BZX884-B20,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 20V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 20V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.39 грн |
| 44+ | 7.32 грн |
| 100+ | 3.79 грн |
| 500+ | 3.34 грн |
| 1000+ | 3.13 грн |
| 2000+ | 3.06 грн |
| 5000+ | 2.94 грн |
| 74LVC3G34GM,125 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 8-XQFN
Packaging: Bulk
Package / Case: 8-XFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XQFN (1.6x1.6)
Description: IC BUFFER NON-INVERT 5.5V 8-XQFN
Packaging: Bulk
Package / Case: 8-XFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XQFN (1.6x1.6)
на замовлення 125375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1001+ | 21.25 грн |
| 74ALVCH16245DL,112 |
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Виробник: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 3.6V 48SSOP
Description: IC TXRX NON-INVERT 3.6V 48SSOP
на замовлення 1562 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 441+ | 56.41 грн |
| 74ALVCH16501DGGS |
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Виробник: Nexperia USA Inc.
Description: IC UNIV BUS TXRX 18BIT 56TSSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Number of Circuits: 18-Bit
Mounting Type: Surface Mount
Logic Type: Universal Bus Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-TSSOP
Description: IC UNIV BUS TXRX 18BIT 56TSSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Number of Circuits: 18-Bit
Mounting Type: Surface Mount
Logic Type: Universal Bus Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 56-TSSOP
на замовлення 595 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 371+ | 62.19 грн |
| BZX884-C24,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| BZX884-C24,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 24V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 16.8 V
Grade: Automotive
Qualification: AEC-Q100
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| BZX38450-C5V1-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.39 грн |
| BZX38450-C5V1-QX |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 300MW SOD323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 4371 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 17.35 грн |
| 32+ | 10.02 грн |
| 50+ | 7.13 грн |
| 100+ | 5.80 грн |
| IP4254CZ12-6-TTL,1 |
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Виробник: Nexperia USA Inc.
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 28dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF (Total)
Height: 0.022" (0.55mm)
Attenuation Value: 28dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: LAN, WAN
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
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| 74LVC2G14GW |
Виробник: Nexperia USA Inc.
Description: INVERTER, LVC/LCX/Z SERIES, 2-FU
Packaging: Bulk
Part Status: Active
Features: Schmitt Trigger
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSSOP
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
Description: INVERTER, LVC/LCX/Z SERIES, 2-FU
Packaging: Bulk
Part Status: Active
Features: Schmitt Trigger
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-TSSOP
Input Logic Level - High: 1.7V ~ 3.8V
Input Logic Level - Low: 0.25V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
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| 2N7002KQBZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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| 2N7002KQBZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: 2N7002KQB/SOT8015/DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 720mA (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 720mA, 10V
Power Dissipation (Max): 420mW (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: DFN1110D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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| 74LVC2G32GXX |
![]() |
Виробник: Nexperia USA Inc.
Description: IC GATE OR 2CH 2-INP 8X2SON
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-X2SON (1.35x0.8)
Input Logic Level - High: 0.95V ~ 3.4V
Input Logic Level - Low: 0.1V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
Description: IC GATE OR 2CH 2-INP 8X2SON
Packaging: Bulk
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-X2SON (1.35x0.8)
Input Logic Level - High: 0.95V ~ 3.4V
Input Logic Level - Low: 0.1V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 4 µA
на замовлення 58353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1406+ | 14.79 грн |
| BZX84-C9V1/DG/B4VL |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.05V 250MW TO236AB
Description: DIODE ZENER 9.05V 250MW TO236AB
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| BZX84-C9V1/DG/B3:2 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 9.05V 250MW TO236AB
Description: DIODE ZENER 9.05V 250MW TO236AB
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В кошику
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| PSMN057-200P,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 200V 39A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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| PXP011-20QXJ |
Виробник: Nexperia USA Inc.
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
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| PXP011-20QXJ |
Виробник: Nexperia USA Inc.
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Description: PXP011-20QX/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 56.6A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
на замовлення 5875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.96 грн |
| 11+ | 29.04 грн |
| 25+ | 25.96 грн |
| 100+ | 21.20 грн |
| 250+ | 19.69 грн |
| 500+ | 18.79 грн |
| 1000+ | 17.74 грн |
| BC856AQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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од. на суму грн.
| BC856AQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
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| BC856AQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
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| BC856AQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.00 грн |
| 28+ | 11.38 грн |
| 50+ | 8.11 грн |
| 100+ | 6.62 грн |
| 74AHCT1G79GW125 |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
Description: NOW NEXPERIA 74AHCT1G79GW-Q100 -
товару немає в наявності
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| 74AUP1G80GF132 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Description: IC FF D-TYPE SNGL 1BIT 6XSON
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| 74LVC1G80GM,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 200 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 400 MHz
Input Capacitance: 5 pF
Supplier Device Package: 6-XSON (1.45x1)
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 155000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4661+ | 4.75 грн |
| BC856BQCZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
товару немає в наявності
В кошику
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| BC856BQCZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
на замовлення 2184 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.00 грн |
| 28+ | 11.46 грн |
| 50+ | 8.18 грн |
| 100+ | 6.67 грн |
| BC856BQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BC856BQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 360 mW
Qualification: AEC-Q101
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.83 грн |
| 28+ | 11.77 грн |
| 50+ | 8.40 грн |
| 100+ | 6.85 грн |
| PZU7.5B,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
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| PZU7.5B,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
Description: DIODE ZENER 7.5V 310MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Qualification: AEC-Q100
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.96 грн |
| 23+ | 14.40 грн |
| 50+ | 10.28 грн |
| 100+ | 8.39 грн |
| PMEG4005ESF315 |
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Виробник: Nexperia USA Inc.
Description: NEXPERIA PMEG4005ESF - RECTIFIER
Packaging: Bulk
Part Status: Active
Description: NEXPERIA PMEG4005ESF - RECTIFIER
Packaging: Bulk
Part Status: Active
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7969+ | 3.13 грн |
| PMEG4005EGW,115 |
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Виробник: Nexperia USA Inc.
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Packaging: Bulk
Part Status: Active
Description: RECTIFIER DIODE, SCHOTTKY, 0.5A,
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| PMEG4005EH/6X |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 500MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 43pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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| PSMN1R5-50YLHX |
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Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 127.10 грн |
| PSMN1R5-50YLHX |
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Виробник: Nexperia USA Inc.
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
Description: PSMN1R5-50YLH/SOT1023/4 LEADS
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 25A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11143 pF @ 25 V
на замовлення 4169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 304.83 грн |
| 10+ | 193.46 грн |
| 100+ | 136.59 грн |
| 500+ | 117.16 грн |
| PSMN1R2-55SLHAX |
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Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
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од. на суму грн.
| PSMN1R2-55SLHAX |
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Виробник: Nexperia USA Inc.
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: PSMN1R2-55SLH/SOT1235/LFPAK88
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
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| PSMN1R2-55SLH |
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Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
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| PSMN1R2-55SLH |
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Виробник: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 375W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 301.52 грн |
| 10+ | 260.92 грн |
| 100+ | 213.76 грн |
| 500+ | 170.77 грн |
| 1000+ | 144.02 грн |
| PSMN1R2-25YLD,115 |
Виробник: Nexperia USA Inc.
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
Description: PSMN1R2-25YLD - N-CHANNEL 25V, 2
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| PSMN1R1-30EL,127 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 333+ | 74.35 грн |
| 74HCT10DB,112 |
![]() |
на замовлення 4056 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1293+ | 18.08 грн |
| PXP6R1-30QLJ |
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Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
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| PXP6R1-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Description: PXP6R1-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 71.1A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 13.4A, 10V
Power Dissipation (Max): 1.8W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 116.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
на замовлення 2257 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.44 грн |
| 10+ | 85.67 грн |
| 50+ | 64.09 грн |
| 100+ | 53.62 грн |
| 74AHCT1G125GF,132 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 5.5V 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-XSON, SOT891 (1x1)
Part Status: Obsolete
на замовлення 130643 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1880+ | 12.65 грн |
| 74HC20PW118 |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14TSSOP
Description: IC GATE NAND 2CH 4-INP 14TSSOP
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| PUMT1 |
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Виробник: Nexperia USA Inc.
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
Description: PUMT1 - PNP GENERAL PURPOSE DOUB
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| PXN5R4-30QLJ |
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Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 16.38 грн |
| PXN5R4-30QLJ |
![]() |
Виробник: Nexperia USA Inc.
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Description: PXN5R4-30QL/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: MLPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
на замовлення 32449 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.70 грн |
| 11+ | 29.12 грн |
| 100+ | 20.18 грн |
| 500+ | 15.84 грн |
| 1000+ | 14.81 грн |
| BZX58550-C62-QX |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Description: BZX58550-C62-Q/SOD523/SC-79
товару немає в наявності
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| BZX58550-C62-QX |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C62-Q/SOD523/SC-79
Description: BZX58550-C62-Q/SOD523/SC-79
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од. на суму грн.
| BCV28,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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од. на суму грн.
| BCV28,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP DARL 30V 0.5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 515 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.00 грн |
| 10+ | 34.05 грн |
| 100+ | 21.90 грн |
| 500+ | 15.63 грн |
| 74LVC1G08GF/S500,1 |
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на замовлення 245000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 720+ | 31.63 грн |
| 74LVC1G08GM,115 |
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Виробник: Nexperia USA Inc.
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 1CH 2-INP 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
на замовлення 2553 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.70 грн |
| 31+ | 10.34 грн |
| 35+ | 9.13 грн |
| 100+ | 7.32 грн |
| 250+ | 6.72 грн |
| 500+ | 6.36 грн |
| 1000+ | 5.96 грн |
| 2500+ | 5.78 грн |
| PESD3USB30Z |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 15WLCSP
Description: TVS DIODE 5.5VWM 15WLCSP
на замовлення 17350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1159+ | 20.42 грн |



















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