Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (31403) > Сторінка 252 з 524
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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NZX3V6C,133 | Nexperia USA Inc. |
Description: DIODE ZENER 3.7V 500MW ALF2Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: ALF2 Impedance (Max) (Zzt): 100 Ohms Voltage - Zener (Nom) (Vz): 3.7 V Operating Temperature: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±3% Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX8450-C51-QR | Nexperia USA Inc. |
Description: BZX8450-C51-Q/SOT23/TO-236AB |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX8450-C51-QR | Nexperia USA Inc. |
Description: BZX8450-C51-Q/SOT23/TO-236AB |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PZU3.3B1A,115 | Nexperia USA Inc. |
Description: DIODE ZENER 3.3V 320MW SOD323Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Power - Max: 320 mW Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 95 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±2% Packaging: Cut Tape (CT) |
на замовлення 4890 шт: термін постачання 21-31 дні (днів) |
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IP4282CZ6,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.5VWM 8V 6XSON SOT886 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84-C6V2/DG/B4VL | Nexperia USA Inc. |
Description: DIODE ZENER 6.2V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84-C6V2/DG/B4R | Nexperia USA Inc. |
Description: DIODE ZENER 6.2V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84-C5V1/DG/B4R | Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84-C5V1/DG/B3,2 | Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 250MW TO236ABQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: TO-236AB Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX58550-C10-QX | Nexperia USA Inc. |
Description: BZX58550-C10-Q/SOD523/SC-79 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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BZX58550-C10-QX | Nexperia USA Inc. |
Description: BZX58550-C10-Q/SOD523/SC-79 |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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BZX58550-C18X | Nexperia USA Inc. |
Description: BZX58550-C18/SOD523/SC-79 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BZX58550-C18X | Nexperia USA Inc. |
Description: BZX58550-C18/SOD523/SC-79 |
на замовлення 20421 шт: термін постачання 21-31 дні (днів) |
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PSMN030-150B,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 150V 55.5A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PESD5V0U1UT/ZLR | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 21VC TO236ABPart Status: Obsolete Power Line Protection: No Power - Peak Pulse: 80W Voltage - Clamping (Max) @ Ipp: 21V Voltage - Breakdown (Min): 7V Unidirectional Channels: 2 Supplier Device Package: TO-236AB Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.6pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PUMH2/DG/B4X | Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 50V 6TSSOPSupplier Device Package: 6-TSSOP Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 230MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PUMH1/DG/B4X | Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 50V 6TSSOP Supplier Device Package: 6-TSSOP Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 230MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Voltage - Collector Emitter Breakdown (Max): 50V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMP4201Y/DG/B3X | Nexperia USA Inc. |
Description: TRANS 2NPN 45V 100MA 6-TSSOPOperating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 6-TSSOP Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74AUP1T00GWH | Nexperia USA Inc. |
Description: IC GATE NAND 1CH 2-INP 5TSSOPCurrent - Quiescent (Max): 1.2 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF Input Logic Level - Low: 0.1V ~ 0.44V Input Logic Level - High: 1.9V ~ 2.6V Supplier Device Package: 5-TSSOP Number of Inputs: 2 Current - Output High, Low: 4mA, 4mA Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C Logic Type: NAND Gate Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Schmitt Trigger Packaging: Cut Tape (CT) |
на замовлення 7765 шт: термін постачання 21-31 дні (днів) |
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BZX84-C6V2/DG/B3:2 | Nexperia USA Inc. |
Description: DIODE ZENER 6.2V 250MW TO236AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMPB07R3VPX | Nexperia USA Inc. |
Description: PMPB07R3VP - 12 V, P-CHANNEL TREVgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN2020M-6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMPB07R3VPX | Nexperia USA Inc. |
Description: PMPB07R3VP - 12 V, P-CHANNEL TREPart Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
на замовлення 4160 шт: термін постачання 21-31 дні (днів) |
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PMPB09R5VPX | Nexperia USA Inc. |
Description: PMPB09R5VP - 12 V, P-CHANNEL TREInput Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMPB09R5VPX | Nexperia USA Inc. |
Description: PMPB09R5VP - 12 V, P-CHANNEL TREInput Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Part Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
на замовлення 5626 шт: термін постачання 21-31 дні (днів) |
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PMPB12R5EPX | Nexperia USA Inc. |
Description: PMPB12R5EP - 30 V, P-CHANNEL TREInput Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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PMPB12R5EPX | Nexperia USA Inc. |
Description: PMPB12R5EP - 30 V, P-CHANNEL TREInput Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PMPB07R3ENX | Nexperia USA Inc. |
Description: PMPB07R3EN/SOT1220-2/DFN2020M- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DFN2020M-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||
| PMPB07R3ENX | Nexperia USA Inc. |
Description: PMPB07R3EN/SOT1220-2/DFN2020M- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DFN2020M-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V |
на замовлення 2815 шт: термін постачання 21-31 дні (днів) |
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NXS0101GMX | Nexperia USA Inc. |
Description: IC XLTR VL BIDIR 6-XSON/SOT886Number of Circuits: 1 Part Status: Active Voltage - VCCB: 2.3 V ~ 5.5 V Voltage - VCCA: 1.65 V ~ 3.6 V Channels per Circuit: 1 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 6-XSON, SOT886 (1.45x1) Data Rate: 24Mbps Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain, Push-Pull Package / Case: 6-XFDFN Packaging: Cut Tape (CT) |
на замовлення 5743 шт: термін постачання 21-31 дні (днів) |
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BUK7M9R9-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 60A LFPAK33Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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BUK7M9R9-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 60A LFPAK33Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 5558 шт: термін постачання 21-31 дні (днів) |
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BUK7M22-80EX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 37A LFPAK33Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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BUK7M22-80EX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 37A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11257 шт: термін постачання 21-31 дні (днів) |
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BUK7M67-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 14A LFPAK33Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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BUK7M67-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 14A LFPAK33Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) |
на замовлення 415 шт: термін постачання 21-31 дні (днів) |
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BZX884S-B22YL | Nexperia USA Inc. |
Description: BZX884S-B22/SOD882BD/XSON2Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 365 mW Supplier Device Package: DFN1006BD-2 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 22 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Tolerance: ±1.82% Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX884S-B22YL | Nexperia USA Inc. |
Description: BZX884S-B22/SOD882BD/XSON2Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-882 Tolerance: ±1.82% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 365 mW Supplier Device Package: DFN1006BD-2 Impedance (Max) (Zzt): 55 Ohms Voltage - Zener (Nom) (Vz): 22 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HCT257PW,118 | Nexperia USA Inc. |
Description: IC MULTIPLEXER 4 X 2:1 16-TSSOPPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 6mA, 6mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Active |
на замовлення 13654 шт: термін постачання 21-31 дні (днів) |
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74AHCT257D,112 | Nexperia USA Inc. |
Description: IC MULTIPLEXER 4 X 2:1 16-SOPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SO Part Status: Obsolete |
на замовлення 42878 шт: термін постачання 21-31 дні (днів) |
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74LVC126ABQ-Q100X | Nexperia USA Inc. |
Description: IC BUF NON-INVERT 3.6V 14DHVQFNPart Status: Active Supplier Device Package: 14-DHVQFN (2.5x3) Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 1 Voltage - Supply: 1.2V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 4 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 14-VFQFN Exposed Pad Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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74LVC126ABQ-Q100X | Nexperia USA Inc. |
Description: IC BUF NON-INVERT 3.6V 14DHVQFNPart Status: Active Supplier Device Package: 14-DHVQFN (2.5x3) Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 1 Voltage - Supply: 1.2V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 4 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 14-VFQFN Exposed Pad Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HCT241D,652 | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 5.5V 20-SOPart Status: Active Supplier Device Package: 20-SO Current - Output High, Low: 6mA, 6mA Number of Bits per Element: 4 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SOIC (0.295", 7.50mm Width) Packaging: Bulk |
на замовлення 13954 шт: термін постачання 21-31 дні (днів) |
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74HC241DB,118 | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 6V 20-SSOPPart Status: Obsolete Supplier Device Package: 20-SSOP Current - Output High, Low: 7.8mA, 7.8mA Number of Bits per Element: 4 Voltage - Supply: 2V ~ 6V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SSOP (0.209", 5.30mm Width) Packaging: Bulk |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74HCT240DB,118-NEX | Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 20SSOP Part Status: Active Supplier Device Package: 20-SSOP Current - Output High, Low: 6mA, 6mA Number of Bits per Element: 4 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SSOP (0.209", 5.30mm Width) Packaging: Bulk Logic Type: Buffer, Inverting Number of Elements: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HCT240PW118 | Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 20TSSOPPart Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 6mA, 6mA Number of Bits per Element: 4 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HCT240DB,118 | Nexperia USA Inc. |
Description: IC BUFFER INVERTING 5.5V 20-SSOPPackaging: Bulk Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SSOP Part Status: Obsolete |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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74HCT240BQ,115 | Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 20-DHVQFNPackaging: Bulk Package / Case: 20-VFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-DHVQFN (4.5x2.5) Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BUK9245-55A/C1118 | Nexperia USA Inc. |
Description: NEXPERIA BUK9245-55A - POWER FIEPackaging: Bulk Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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BZX884S-B16-QYL | Nexperia USA Inc. |
Description: DIODE ZENER 16V 365MW DFN1006BDPackaging: Tape & Reel (TR) Tolerance: ±1.88% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DFN1006BD-2 Part Status: Active Power - Max: 365 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BZX884S-B16-QYL | Nexperia USA Inc. |
Description: DIODE ZENER 16V 365MW DFN1006BDPackaging: Cut Tape (CT) Tolerance: ±1.88% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DFN1006BD-2 Part Status: Active Power - Max: 365 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 11578 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC123JQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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PDTC123JQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4740 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC124EQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNFrequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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PDTC124EQC-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNPart Status: Active Supplier Device Package: DFN1412D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 230 MHz Power - Max: 360 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4870 шт: термін постачання 21-31 дні (днів) |
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PDTC124EQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 230 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Resistors Included: R1 and R2 Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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PDTC124EQB-QZ | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V 0.1A 3DFNResistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 230 MHz Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
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| NZX3V6C,133 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3.7V 500MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3.7 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±3%
Packaging: Tape & Box (TB)
Description: DIODE ZENER 3.7V 500MW ALF2
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: ALF2
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 3.7 V
Operating Temperature: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±3%
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZX8450-C51-QR |
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Виробник: Nexperia USA Inc.
Description: BZX8450-C51-Q/SOT23/TO-236AB
Description: BZX8450-C51-Q/SOT23/TO-236AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.96 грн |
| BZX8450-C51-QR |
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Виробник: Nexperia USA Inc.
Description: BZX8450-C51-Q/SOT23/TO-236AB
Description: BZX8450-C51-Q/SOT23/TO-236AB
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.50 грн |
| 23+ | 13.39 грн |
| 100+ | 7.08 грн |
| 500+ | 4.37 грн |
| 1000+ | 2.97 грн |
| PZU3.3B1A,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3.3V 320MW SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 320 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 3.3V 320MW SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Power - Max: 320 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
на замовлення 4890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 29+ | 11.00 грн |
| 42+ | 7.26 грн |
| 100+ | 4.86 грн |
| 500+ | 3.47 грн |
| 1000+ | 3.10 грн |
| IP4282CZ6,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 8V 6XSON SOT886
Description: TVS DIODE 5.5VWM 8V 6XSON SOT886
товару немає в наявності
В кошику
од. на суму грн.
| BZX84-C6V2/DG/B4VL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Description: DIODE ZENER 6.2V 250MW TO236AB
товару немає в наявності
В кошику
од. на суму грн.
| BZX84-C6V2/DG/B4R |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Description: DIODE ZENER 6.2V 250MW TO236AB
товару немає в наявності
В кошику
од. на суму грн.
| BZX84-C5V1/DG/B4R |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 250MW TO236AB
Description: DIODE ZENER 5.1V 250MW TO236AB
товару немає в наявності
В кошику
од. на суму грн.
| BZX84-C5V1/DG/B3,2 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 250MW TO236AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 5.1V 250MW TO236AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: TO-236AB
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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| BZX58550-C10-QX |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C10-Q/SOD523/SC-79
Description: BZX58550-C10-Q/SOD523/SC-79
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| BZX58550-C10-QX |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C10-Q/SOD523/SC-79
Description: BZX58550-C10-Q/SOD523/SC-79
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 29.07 грн |
| 14+ | 22.77 грн |
| 100+ | 12.08 грн |
| BZX58550-C18X |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C18/SOD523/SC-79
Description: BZX58550-C18/SOD523/SC-79
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.87 грн |
| 6000+ | 4.08 грн |
| 15000+ | 3.46 грн |
| BZX58550-C18X |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C18/SOD523/SC-79
Description: BZX58550-C18/SOD523/SC-79
на замовлення 20421 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.28 грн |
| 14+ | 21.86 грн |
| 100+ | 11.61 грн |
| 500+ | 7.17 грн |
| 1000+ | 4.88 грн |
| PSMN030-150B,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 150V 55.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 150V 55.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| PESD5V0U1UT/ZLR |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 21VC TO236AB
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 80W
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 7V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5VWM 21VC TO236AB
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 80W
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 7V
Unidirectional Channels: 2
Supplier Device Package: TO-236AB
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| PUMH2/DG/B4X |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| PUMH1/DG/B4X |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Supplier Device Package: 6-TSSOP
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 230MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
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| PMP4201Y/DG/B3X |
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Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: 6-TSSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
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| 74AUP1T00GWH |
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Виробник: Nexperia USA Inc.
Description: IC GATE NAND 1CH 2-INP 5TSSOP
Current - Quiescent (Max): 1.2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.44V
Input Logic Level - High: 1.9V ~ 2.6V
Supplier Device Package: 5-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Description: IC GATE NAND 1CH 2-INP 5TSSOP
Current - Quiescent (Max): 1.2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Input Logic Level - Low: 0.1V ~ 0.44V
Input Logic Level - High: 1.9V ~ 2.6V
Supplier Device Package: 5-TSSOP
Number of Inputs: 2
Current - Output High, Low: 4mA, 4mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
на замовлення 7765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.35 грн |
| 11+ | 29.35 грн |
| 25+ | 27.38 грн |
| 100+ | 20.57 грн |
| 250+ | 19.10 грн |
| 500+ | 16.16 грн |
| 1000+ | 12.28 грн |
| BZX84-C6V2/DG/B3:2 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Description: DIODE ZENER 6.2V 250MW TO236AB
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| PMPB07R3VPX |
![]() |
Виробник: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.94 грн |
| PMPB07R3VPX |
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Виробник: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
на замовлення 4160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 57.35 грн |
| 10+ | 35.71 грн |
| 100+ | 23.78 грн |
| 500+ | 17.40 грн |
| 1000+ | 15.68 грн |
| PMPB09R5VPX |
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Виробник: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.16 грн |
| PMPB09R5VPX |
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Виробник: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
на замовлення 5626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.42 грн |
| 12+ | 27.46 грн |
| 100+ | 18.48 грн |
| 500+ | 13.18 грн |
| 1000+ | 11.84 грн |
| PMPB12R5EPX |
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Виробник: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| PMPB12R5EPX |
![]() |
Виробник: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PMPB07R3ENX |
Виробник: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMPB07R3ENX |
Виробник: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
на замовлення 2815 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 59.70 грн |
| 10+ | 35.86 грн |
| 100+ | 23.24 грн |
| 500+ | 16.69 грн |
| 1000+ | 15.04 грн |
| NXS0101GMX |
![]() |
Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 2.3 V ~ 5.5 V
Voltage - VCCA: 1.65 V ~ 3.6 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Data Rate: 24Mbps
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 2.3 V ~ 5.5 V
Voltage - VCCA: 1.65 V ~ 3.6 V
Channels per Circuit: 1
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Data Rate: 24Mbps
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain, Push-Pull
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
на замовлення 5743 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.71 грн |
| 18+ | 17.78 грн |
| 50+ | 14.58 грн |
| 100+ | 12.76 грн |
| BUK7M9R9-60EX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 27.82 грн |
| 3000+ | 24.66 грн |
| 4500+ | 23.58 грн |
| BUK7M9R9-60EX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 5558 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.98 грн |
| 10+ | 59.91 грн |
| 100+ | 39.71 грн |
| 500+ | 29.11 грн |
| BUK7M22-80EX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 29.50 грн |
| 3000+ | 26.18 грн |
| 4500+ | 25.04 грн |
| 7500+ | 22.30 грн |
| 10500+ | 21.59 грн |
| BUK7M22-80EX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11257 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.69 грн |
| 10+ | 63.16 грн |
| 100+ | 41.95 грн |
| 500+ | 30.81 грн |
| BUK7M67-60EX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 14A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BUK7M67-60EX |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.13 грн |
| 10+ | 34.57 грн |
| 100+ | 22.32 грн |
| BZX884S-B22YL |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Description: BZX884S-B22/SOD882BD/XSON2
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BZX884S-B22YL |
![]() |
Виробник: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
Description: BZX884S-B22/SOD882BD/XSON2
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-882
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 365 mW
Supplier Device Package: DFN1006BD-2
Impedance (Max) (Zzt): 55 Ohms
Voltage - Zener (Nom) (Vz): 22 V
товару немає в наявності
В кошику
од. на суму грн.
| 74HCT257PW,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC MULTIPLEXER 4 X 2:1 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
на замовлення 13654 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 566+ | 35.67 грн |
| 74AHCT257D,112 |
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Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
Description: IC MULTIPLEXER 4 X 2:1 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
на замовлення 42878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 535+ | 37.69 грн |
| 74LVC126ABQ-Q100X |
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Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74LVC126ABQ-Q100X |
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Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Part Status: Active
Supplier Device Package: 14-DHVQFN (2.5x3)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 1
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 14-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
В кошику
од. на суму грн.
| 74HCT241D,652 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 20-SO
Part Status: Active
Supplier Device Package: 20-SO
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Description: IC BUFFER NON-INVERT 5.5V 20-SO
Part Status: Active
Supplier Device Package: 20-SO
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
на замовлення 13954 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 325+ | 62.42 грн |
| 74HC241DB,118 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 20-SSOP
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Current - Output High, Low: 7.8mA, 7.8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Description: IC BUFFER NON-INVERT 6V 20-SSOP
Part Status: Obsolete
Supplier Device Package: 20-SSOP
Current - Output High, Low: 7.8mA, 7.8mA
Number of Bits per Element: 4
Voltage - Supply: 2V ~ 6V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 275+ | 73.95 грн |
| 74HCT240DB,118-NEX |
Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SSOP
Part Status: Active
Supplier Device Package: 20-SSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Logic Type: Buffer, Inverting
Number of Elements: 2
Description: IC BUFFER INVERT 5.5V 20SSOP
Part Status: Active
Supplier Device Package: 20-SSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Bulk
Logic Type: Buffer, Inverting
Number of Elements: 2
товару немає в наявності
В кошику
од. на суму грн.
| 74HCT240PW118 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC BUFFER INVERT 5.5V 20TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 6mA, 6mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 74HCT240DB,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERTING 5.5V 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
Description: IC BUFFER INVERTING 5.5V 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 376+ | 54.08 грн |
| 74HCT240BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20-DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
Description: IC BUFFER INVERT 5.5V 20-DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 490+ | 41.24 грн |
| BUK9245-55A/C1118 |
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Виробник: Nexperia USA Inc.
Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1368+ | 17.28 грн |
| BZX884S-B16-QYL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Tape & Reel (TR)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Tape & Reel (TR)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.98 грн |
| BZX884S-B16-QYL |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Cut Tape (CT)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 16V 365MW DFN1006BD
Packaging: Cut Tape (CT)
Tolerance: ±1.88%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 11578 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.28 грн |
| 29+ | 10.44 грн |
| 100+ | 6.46 грн |
| 500+ | 4.44 грн |
| 1000+ | 3.92 грн |
| 2000+ | 3.48 грн |
| 5000+ | 2.95 грн |
| PDTC124XQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 3.08 грн |
| PDTC124XQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 29+ | 10.44 грн |
| 100+ | 6.49 грн |
| 500+ | 4.46 грн |
| 1000+ | 3.93 грн |
| 2000+ | 3.49 грн |
| PDTC123JQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PDTC123JQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4740 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.71 грн |
| 33+ | 9.30 грн |
| 100+ | 5.76 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.49 грн |
| 2000+ | 3.10 грн |
| PDTC124XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 3.18 грн |
| PDTC124XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 30+ | 10.36 грн |
| 100+ | 6.44 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.91 грн |
| 2000+ | 3.46 грн |
| PDTC124EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PDTC124EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Part Status: Active
Supplier Device Package: DFN1412D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4870 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 30+ | 10.36 грн |
| 100+ | 6.44 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.91 грн |
| 2000+ | 3.46 грн |
| PDTC124EQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistors Included: R1 and R2
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistors Included: R1 and R2
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PDTC124EQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.07 грн |
| 29+ | 10.44 грн |
| 100+ | 6.49 грн |
| 500+ | 4.46 грн |
| 1000+ | 3.93 грн |
| 2000+ | 3.49 грн |













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