Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (30512) > Сторінка 258 з 509
Фото | Назва | Виробник | Інформація |
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IP4282CZ6,115 | Nexperia USA Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84-C6V2/DG/B4VL | Nexperia USA Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84-C6V2/DG/B4R | Nexperia USA Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84-C5V1/DG/B4R | Nexperia USA Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84-C5V1/DG/B3,2 | Nexperia USA Inc. |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: TO-236AB Grade: Automotive Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX58550-C10-QX | Nexperia USA Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX58550-C10-QX | Nexperia USA Inc. |
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на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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BZX58550-C18X | Nexperia USA Inc. |
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на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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BZX58550-C18X | Nexperia USA Inc. |
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на замовлення 20421 шт: термін постачання 21-31 дні (днів) |
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PSMN030-150B,118 | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PESD5V0U1UT/ZLR | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: TO-236AB Unidirectional Channels: 2 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 21V Power - Peak Pulse: 80W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PUMH2/DG/B4X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PUMH1/DG/B4X | Nexperia USA Inc. |
Description: TRANS PREBIAS 2NPN 50V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Frequency - Transition: 230MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: 6-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMP4201Y/DG/B3X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AUP1T00GWH | Nexperia USA Inc. |
![]() Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 5-TSSOP Input Logic Level - High: 1.9V ~ 2.6V Input Logic Level - Low: 0.1V ~ 0.44V Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1.2 µA |
на замовлення 7765 шт: термін постачання 21-31 дні (днів) |
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BZX84-C6V2/DG/B3:2 | Nexperia USA Inc. |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMPB07R3VPX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMPB07R3VPX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V |
на замовлення 4160 шт: термін постачання 21-31 дні (днів) |
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PMPB09R5VPX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PMPB09R5VPX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V |
на замовлення 5626 шт: термін постачання 21-31 дні (днів) |
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PMPB12R5EPX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMPB12R5EPX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020M-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMPB07R3ENX | Nexperia USA Inc. |
Description: PMPB07R3EN/SOT1220-2/DFN2020M- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DFN2020M-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMPB07R3ENX | Nexperia USA Inc. |
Description: PMPB07R3EN/SOT1220-2/DFN2020M- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: DFN2020M-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V |
на замовлення 1159 шт: термін постачання 21-31 дні (днів) |
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NXS0101GMX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Output Type: Open Drain, Push-Pull Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Data Rate: 24Mbps Supplier Device Package: 6-XSON, SOT886 (1.45x1) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 2.3 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
на замовлення 8937 шт: термін постачання 21-31 дні (днів) |
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BUK7M9R9-60EX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BUK7M9R9-60EX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 992 шт: термін постачання 21-31 дні (днів) |
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BUK7M22-80EX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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BUK7M22-80EX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 11447 шт: термін постачання 21-31 дні (днів) |
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BUK7M67-60EX | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BUK7M67-60EX | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 940 шт: термін постачання 21-31 дні (днів) |
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BZX884S-B22YL | Nexperia USA Inc. |
![]() Tolerance: ±1.82% Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DFN1006BD-2 Power - Max: 365 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX884S-B22YL | Nexperia USA Inc. |
![]() Tolerance: ±1.82% Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DFN1006BD-2 Power - Max: 365 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT257PW,118 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 6mA, 6mA Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Active |
на замовлення 14654 шт: термін постачання 21-31 дні (днів) |
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74AHCT257D,112 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SO Part Status: Obsolete |
на замовлення 42878 шт: термін постачання 21-31 дні (днів) |
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74LVC126ABQ-Q100X | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-DHVQFN (2.5x3) Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC126ABQ-Q100X | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-DHVQFN (2.5x3) Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT241D,652 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SO Part Status: Active |
на замовлення 13954 шт: термін постачання 21-31 дні (днів) |
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74HC241DB,118 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SSOP Part Status: Obsolete |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74HCT240DB,118-NEX | Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 20SSOP Packaging: Bulk Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT240PW118 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-TSSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT240DB,118 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SSOP Part Status: Obsolete |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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74HCT240BQ,115 | Nexperia USA Inc. |
![]() Packaging: Bulk Package / Case: 20-VFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-DHVQFN (4.5x2.5) Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BUK9245-55A/C1118 | Nexperia USA Inc. |
![]() Packaging: Bulk Part Status: Active |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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BZX884S-B16-QYL | Nexperia USA Inc. |
![]() Tolerance: ±1.88% Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DFN1006BD-2 Grade: Automotive Part Status: Active Power - Max: 365 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V Qualification: AEC-Q100 |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BZX884S-B16-QYL | Nexperia USA Inc. |
![]() Tolerance: ±1.88% Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: DFN1006BD-2 Grade: Automotive Part Status: Active Power - Max: 365 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V Qualification: AEC-Q100 |
на замовлення 29090 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQB-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQB-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC123JQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTC123JQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4740 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC124XQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC124EQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTC124EQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4870 шт: термін постачання 21-31 дні (днів) |
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PDTC124EQB-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTC124EQB-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 4997 шт: термін постачання 21-31 дні (днів) |
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PDTC123JQB-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC123JQB-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 340 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC114EQC-QZ | Nexperia USA Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PDTC114EQC-QZ | Nexperia USA Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: DFN1412D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 360 mW Frequency - Transition: 230 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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IP4282CZ6,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 8V 6XSON SOT886
Description: TVS DIODE 5.5VWM 8V 6XSON SOT886
товару немає в наявності
В кошику
од. на суму грн.
BZX84-C6V2/DG/B4VL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Description: DIODE ZENER 6.2V 250MW TO236AB
товару немає в наявності
В кошику
од. на суму грн.
BZX84-C6V2/DG/B4R |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Description: DIODE ZENER 6.2V 250MW TO236AB
товару немає в наявності
В кошику
од. на суму грн.
BZX84-C5V1/DG/B4R |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 250MW TO236AB
Description: DIODE ZENER 5.1V 250MW TO236AB
товару немає в наявності
В кошику
од. на суму грн.
BZX84-C5V1/DG/B3,2 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 250MW TO236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
BZX58550-C10-QX |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C10-Q/SOD523/SC-79
Description: BZX58550-C10-Q/SOD523/SC-79
товару немає в наявності
В кошику
од. на суму грн.
BZX58550-C10-QX |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C10-Q/SOD523/SC-79
Description: BZX58550-C10-Q/SOD523/SC-79
на замовлення 170 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.35 грн |
14+ | 23.77 грн |
100+ | 12.61 грн |
BZX58550-C18X |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C18/SOD523/SC-79
Description: BZX58550-C18/SOD523/SC-79
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.08 грн |
6000+ | 4.25 грн |
15000+ | 3.62 грн |
BZX58550-C18X |
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Виробник: Nexperia USA Inc.
Description: BZX58550-C18/SOD523/SC-79
Description: BZX58550-C18/SOD523/SC-79
на замовлення 20421 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 29.53 грн |
14+ | 22.83 грн |
100+ | 12.12 грн |
500+ | 7.49 грн |
1000+ | 5.09 грн |
PSMN030-150B,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Description: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
товару немає в наявності
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PESD5V0U1UT/ZLR |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 21VC TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 80W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 21VC TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: TO-236AB
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 80W
Power Line Protection: No
Part Status: Obsolete
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PUMH2/DG/B4X |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
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PUMH1/DG/B4X |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSSOP
Description: TRANS PREBIAS 2NPN 50V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: 6-TSSOP
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PMP4201Y/DG/B3X |
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Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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74AUP1T00GWH |
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Виробник: Nexperia USA Inc.
Description: IC GATE NAND 1CH 2-INP 5TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.9V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.44V
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1.2 µA
Description: IC GATE NAND 1CH 2-INP 5TSSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 5-TSSOP
Input Logic Level - High: 1.9V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.44V
Max Propagation Delay @ V, Max CL: 6.9ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1.2 µA
на замовлення 7765 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 36.91 грн |
11+ | 30.65 грн |
25+ | 28.59 грн |
100+ | 21.47 грн |
250+ | 19.94 грн |
500+ | 16.87 грн |
1000+ | 12.83 грн |
BZX84-C6V2/DG/B3:2 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Description: DIODE ZENER 6.2V 250MW TO236AB
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PMPB07R3VPX |
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Виробник: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 15.60 грн |
PMPB07R3VPX |
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Виробник: Nexperia USA Inc.
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
Description: PMPB07R3VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2121 pF @ 6 V
на замовлення 4160 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.87 грн |
10+ | 37.28 грн |
100+ | 24.82 грн |
500+ | 18.16 грн |
1000+ | 16.37 грн |
PMPB09R5VPX |
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Виробник: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 11.65 грн |
PMPB09R5VPX |
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Виробник: Nexperia USA Inc.
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Description: PMPB09R5VP - 12 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
на замовлення 5626 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.29 грн |
12+ | 28.67 грн |
100+ | 19.30 грн |
500+ | 13.76 грн |
1000+ | 12.36 грн |
PMPB12R5EPX |
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Виробник: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
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PMPB12R5EPX |
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Виробник: Nexperia USA Inc.
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
Description: PMPB12R5EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8.8A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1392 pF @ 15 V
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PMPB07R3ENX |
Виробник: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
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PMPB07R3ENX |
Виробник: Nexperia USA Inc.
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
Description: PMPB07R3EN/SOT1220-2/DFN2020M-
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 914 pF @ 15 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 39.37 грн |
10+ | 32.30 грн |
100+ | 22.46 грн |
500+ | 16.46 грн |
1000+ | 13.38 грн |
NXS0101GMX |
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Виробник: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 2.3 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Open Drain, Push-Pull
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 2.3 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
на замовлення 8937 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.79 грн |
20+ | 16.03 грн |
25+ | 14.25 грн |
100+ | 11.53 грн |
250+ | 10.64 грн |
500+ | 10.11 грн |
1000+ | 9.52 грн |
2500+ | 9.06 грн |
BUK7M9R9-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
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BUK7M9R9-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 60A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Qualification: AEC-Q101
на замовлення 992 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.08 грн |
10+ | 50.79 грн |
100+ | 38.11 грн |
500+ | 28.23 грн |
BUK7M22-80EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 23.82 грн |
3000+ | 22.51 грн |
BUK7M22-80EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 23.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 25 V
Qualification: AEC-Q101
на замовлення 11447 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.41 грн |
10+ | 47.63 грн |
100+ | 33.02 грн |
500+ | 27.37 грн |
BUK7M67-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
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од. на суму грн.
BUK7M67-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 14A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Qualification: AEC-Q101
на замовлення 940 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 41.83 грн |
11+ | 29.62 грн |
100+ | 22.11 грн |
500+ | 17.17 грн |
BZX884S-B22YL |
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Виробник: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
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BZX884S-B22YL |
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Виробник: Nexperia USA Inc.
Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Description: BZX884S-B22/SOD882BD/XSON2
Tolerance: ±1.82%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DFN1006BD-2
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
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74HCT257PW,118 |
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Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Description: IC MULTIPLEXER 4 X 2:1 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
на замовлення 14654 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1803+ | 12.86 грн |
74AHCT257D,112 |
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Виробник: Nexperia USA Inc.
Description: IC MULTIPLEXER 4 X 2:1 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
Description: IC MULTIPLEXER 4 X 2:1 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
Part Status: Obsolete
на замовлення 42878 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1805+ | 12.43 грн |
74LVC126ABQ-Q100X |
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Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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74LVC126ABQ-Q100X |
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Виробник: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC BUF NON-INVERT 3.6V 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-DHVQFN (2.5x3)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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74HCT241D,652 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 5.5V 20SO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
Description: IC BUFFER NON-INVERT 5.5V 20SO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SO
Part Status: Active
на замовлення 13954 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
929+ | 25.02 грн |
74HC241DB,118 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
Description: IC BUFFER NON-INVERT 6V 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
645+ | 33.07 грн |
74HCT240DB,118-NEX |
Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Active
Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
74HCT240PW118 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-TSSOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
74HCT240DB,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
Description: IC BUFFER INVERT 5.5V 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SSOP
Part Status: Obsolete
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1076+ | 21.90 грн |
74HCT240BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
Description: IC BUFFER INVERT 5.5V 20DHVQFN
Packaging: Bulk
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1560+ | 14.86 грн |
BUK9245-55A/C1118 |
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Виробник: Nexperia USA Inc.
Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
Description: NEXPERIA BUK9245-55A - POWER FIE
Packaging: Bulk
Part Status: Active
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1368+ | 18.04 грн |
BZX884S-B16-QYL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 16V 365MW DFN1006BD
Tolerance: ±1.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
Description: DIODE ZENER 16V 365MW DFN1006BD
Tolerance: ±1.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10000+ | 4.93 грн |
20000+ | 2.22 грн |
BZX884S-B16-QYL |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 16V 365MW DFN1006BD
Tolerance: ±1.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
Description: DIODE ZENER 16V 365MW DFN1006BD
Tolerance: ±1.88%
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
Qualification: AEC-Q100
на замовлення 29090 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.40 грн |
38+ | 8.45 грн |
100+ | 6.41 грн |
500+ | 5.20 грн |
1000+ | 5.17 грн |
2000+ | 5.14 грн |
PDTC124XQB-QZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.21 грн |
PDTC124XQB-QZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.86 грн |
29+ | 10.90 грн |
100+ | 6.78 грн |
500+ | 4.66 грн |
1000+ | 4.11 грн |
2000+ | 3.64 грн |
PDTC123JQC-QZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
PDTC123JQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4740 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 16.40 грн |
33+ | 9.71 грн |
100+ | 6.01 грн |
500+ | 4.14 грн |
1000+ | 3.65 грн |
2000+ | 3.23 грн |
PDTC124XQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.32 грн |
PDTC124XQC-QZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.86 грн |
30+ | 10.82 грн |
100+ | 6.72 грн |
500+ | 4.63 грн |
1000+ | 4.08 грн |
2000+ | 3.62 грн |
PDTC124EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
PDTC124EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.86 грн |
30+ | 10.82 грн |
100+ | 6.72 грн |
500+ | 4.63 грн |
1000+ | 4.08 грн |
2000+ | 3.62 грн |
PDTC124EQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику
од. на суму грн.
PDTC124EQB-QZ |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 4997 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.86 грн |
29+ | 10.90 грн |
100+ | 6.78 грн |
500+ | 4.66 грн |
1000+ | 4.11 грн |
2000+ | 3.64 грн |
PDTC123JQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 2.96 грн |
PDTC123JQB-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 340 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.22 грн |
32+ | 10.03 грн |
100+ | 6.25 грн |
500+ | 4.30 грн |
1000+ | 3.79 грн |
2000+ | 3.36 грн |
PDTC114EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.33 грн |
PDTC114EQC-QZ |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: DFN1412D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 360 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
19+ | 18.04 грн |
31+ | 10.50 грн |
100+ | 6.51 грн |
500+ | 4.48 грн |
1000+ | 3.95 грн |
2000+ | 3.50 грн |