Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (31396) > Сторінка 360 з 524
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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74HC373DB,112 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP 8:8 20-SSOPPackaging: Bulk Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Delay Time - Propagation: 12ns Supplier Device Package: 20-SSOP Part Status: Obsolete |
на замовлення 7238 шт: термін постачання 21-31 дні (днів) |
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PMXB350UPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1.2A DFN1010D-3Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN1010D-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Power Dissipation (Max): 360mW (Ta), 5.68W (Tc) Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: P-Channel |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMXB350UPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 1.2A DFN1010D-3Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: DFN1010D-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 360mW (Ta), 5.68W (Tc) Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 4205 шт: термін постачання 21-31 дні (днів) |
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PMXB43UNEZ | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 3.2A DFN1010D-3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMXB43UNEZ | Nexperia USA Inc. |
Description: MOSFET N-CH 20V 3.2A DFN1010D-3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: DFN1010D-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMDXB950UPEL/S500Z | Nexperia USA Inc. |
Description: PMDXB950UPEL - 20 V, DUAL P-CHANPackage / Case: 6-XFDFN Exposed Pad Packaging: Bulk Part Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 265mW (Ta), 4.025W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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PMCXB900UEL/S500Z | Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.6A 6DFN Part Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 0.95V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, 1.4Ohm @ 500mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, 43pF @ 10V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), 500mA (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 265mW (Ta), 4.03W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Bulk |
на замовлення 4300 шт: термін постачання 21-31 дні (днів) |
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PMDXB290UNEZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.93A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 280mW (Ta), 6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMDXB290UNEZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 0.93A 6DFNPart Status: Active Supplier Device Package: DFN1010B-6 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 280mW (Ta), 6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 1607 шт: термін постачання 21-31 дні (днів) |
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BC817DPN | Nexperia USA Inc. |
Description: NOW NEXPERIA BC817 - SMALL SIGNAPackaging: Bulk Package / Case: SOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 370mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz, 80MHz Supplier Device Package: SOT-23-6L Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G74GT,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1-BIT 8XSONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON, SOT833-1 (1.95x1) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G74GT,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1-BIT 8XSONPackaging: Cut Tape (CT) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON, SOT833-1 (1.95x1) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 2912 шт: термін постачання 21-31 дні (днів) |
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74LVC2G74GD,125 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1BIT 8XSONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON (2x3) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Obsolete Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LVC2G74GN,115 | Nexperia USA Inc. |
Description: IC FF D-TYPE SINGLE 1BIT 8XSONPackaging: Tape & Reel (TR) Package / Case: 8-XFDFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 32mA, 32mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 4 pF Supplier Device Package: 8-XSON (1.2x1) Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC1G175GN,132 | Nexperia USA Inc. |
Description: IC FF D-TYPE SNGL 1BIT 6XSONNumber of Bits per Element: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Supplier Device Package: 6-XSON (0.9x1) Input Capacitance: 2.5 pF Clock Frequency: 200 MHz Trigger Type: Positive Edge Current - Output High, Low: 32mA, 32mA Current - Quiescent (Iq): 40 µA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Type: D-Type Function: Reset Number of Elements: 1 Mounting Type: Surface Mount Output Type: Non-Inverted Package / Case: 6-XFDFN Packaging: Bulk |
на замовлення 109850 шт: термін постачання 21-31 дні (днів) |
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PTVS20VS1UR/8X | Nexperia USA Inc. |
Description: TVS DIODE 20VWM 32.4VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Automotive Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V (Max) Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PTVS20VS1UR-QX | Nexperia USA Inc. |
Description: TVS DIODE 20VWM 32.4VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V (Max) Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BC817K-25R | Nexperia USA Inc. |
Description: TRANS NPN 45V 0.5A TO-236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC817K-25R | Nexperia USA Inc. |
Description: TRANS NPN 45V 0.5A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW Qualification: AEC-Q100 |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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BC857BQB-QZ | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR IN DFN PACKPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMDPB30XNZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSONPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta), 8.33W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PMDPB30XNZ | Nexperia USA Inc. |
Description: MOSFET 2N-CH 20V 4A 6HUSONPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW (Ta), 8.33W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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74HC573BQ,115 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP 8:8 20-DHVQFNPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Delay Time - Propagation: 14ns Supplier Device Package: 20-DHVQFN (4.5x2.5) Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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74HC573BQ,115 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP 8:8 20-DHVQFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Delay Time - Propagation: 14ns Supplier Device Package: 20-DHVQFN (4.5x2.5) Part Status: Active |
на замовлення 21937 шт: термін постачання 21-31 дні (днів) |
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BCX71K,235 | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT86D/C5J | Nexperia USA Inc. |
Description: IC GATE XOR 4CH 2-INP 14SOPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SO Input Logic Level - High: 1.6V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 132500 шт: термін постачання 21-31 дні (днів) |
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PZU5.1B3A-QX | Nexperia USA Inc. |
Description: PZU5.1B3A-Q/SOD323/SOD2Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.26 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 320 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PZU5.1B3A-QX | Nexperia USA Inc. |
Description: PZU5.1B3A-Q/SOD323/SOD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.26 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 320 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Qualification: AEC-Q101 |
на замовлення 1857 шт: термін постачання 21-31 дні (днів) |
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| BZX384-C6V8-QX | Nexperia USA Inc. |
Description: BZX384-C6V8-Q/SOD323/SOD2Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±5% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| BZX384-B6V8-QX | Nexperia USA Inc. |
Description: BZX384-B6V8-Q/SOD323/SOD2Current - Reverse Leakage @ Vr: 2 µA @ 4 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 300 mW Part Status: Active Supplier Device Package: SOD-323 Impedance (Max) (Zzt): 15 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Tolerance: ±2% Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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74HCT4053D-Q100,11 | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 3 120OHM 16SOPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 120Ohm -3db Bandwidth: 170MHz Supplier Device Package: 16-SO Voltage - Supply, Single (V+): 4.5V ~ 5.5V Voltage - Supply, Dual (V±): ±1V ~ 5V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 6Ohm Switch Time (Ton, Toff) (Max): 34ns, 31ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Part Status: Active Number of Circuits: 3 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74HCT4053DB,118 | Nexperia USA Inc. |
Description: IC SWITCH SPDT X 3 120OHM 16SSOPPackaging: Tape & Reel (TR) Package / Case: 16-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 120Ohm -3db Bandwidth: 170MHz Supplier Device Package: 16-SSOP Voltage - Supply, Single (V+): 4.5V ~ 5.5V Voltage - Supply, Dual (V±): ±1V ~ 5V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 6Ohm Switch Time (Ton, Toff) (Max): 34ns, 31ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Obsolete Number of Circuits: 3 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN190-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN190-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
на замовлення 1393 шт: термін постачання 21-31 дні (днів) |
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GAN140-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN140-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
на замовлення 2365 шт: термін постачання 21-31 дні (днів) |
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GAN190-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN190-650EBEZ | Nexperia USA Inc. |
Description: 650 V, 190 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 12.2mA Supplier Device Package: DFN8080-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V |
на замовлення 945 шт: термін постачання 21-31 дні (днів) |
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GAN140-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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GAN140-650FBEZ | Nexperia USA Inc. |
Description: 650 V, 140 MOHM GALLIUM NITRIDEPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: DFN5060-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
на замовлення 1977 шт: термін постачання 21-31 дні (днів) |
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PTVS9V0S1UTR,115 | Nexperia USA Inc. |
Description: TVS DIODE 9VWM 15.4VC SOD123WPackaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PTVS9V0S1UTR,115 | Nexperia USA Inc. |
Description: TVS DIODE 9VWM 15.4VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 185°C (TA) Current - Peak Pulse (10/1000µs): 26A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 2742 шт: термін постачання 21-31 дні (днів) |
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74HC1G125GV-Q100H | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 6V SC74APackaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: SC-74A Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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74HC1G125GV-Q100H | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 6V SC74APackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: SC-74A Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 796 шт: термін постачання 21-31 дні (днів) |
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BUK965R4-40E,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 7196 шт: термін постачання 21-31 дні (днів) |
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PDTA124ET-QR | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PDTA124ET-QR | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA123YMB,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNResistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 180 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: DFN1006B-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Current - Collector Cutoff (Max): 1µA Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q100 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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PDTA123YMB,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
на замовлення 8130 шт: термін постачання 21-31 дні (днів) |
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PDTA123EU,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PDTA123EU,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 and R2 |
на замовлення 2924 шт: термін постачання 21-31 дні (днів) |
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PDTA123YU,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PDTA123YU,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 2576 шт: термін постачання 21-31 дні (днів) |
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PDTA123JMB,315 | Nexperia USA Inc. |
Description: TRANS PREBIASPackaging: Bulk Part Status: Active |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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PDTA123TM,315 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V SOT883Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: SOT-883 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Resistors Included: R1 Only |
на замовлення 89950 шт: термін постачання 21-31 дні (днів) |
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PDTA123TT,215 | Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V TO236ABPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 2.2 kOhms Qualification: AEC-Q100 Resistors Included: R1 Only |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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74LVC126ADB,118 | Nexperia USA Inc. |
Description: IC BUFFER NON-INVERT 3.6V 14SSOPPackaging: Bulk Package / Case: 14-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-SSOP Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74HCT20DB,118 | Nexperia USA Inc. |
Description: IC GATE NAND 2CH 4-INP 14SSOPPackaging: Bulk Package / Case: 14-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 4 Supplier Device Package: 14-SSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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74HCT20DB,112 | Nexperia USA Inc. |
Description: IC GATE NAND 2CH 4-INP 14SSOPPackaging: Tube Package / Case: 14-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 4 Supplier Device Package: 14-SSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 2184 шт: термін постачання 21-31 дні (днів) |
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74LVC1G10GN,132 | Nexperia USA Inc. |
Description: IC GATE NANDPart Status: Active Packaging: Bulk |
на замовлення 189790 шт: термін постачання 21-31 дні (днів) |
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| 74HC373DB,112 |
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Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 12ns
Supplier Device Package: 20-SSOP
Part Status: Obsolete
Description: IC D-TYPE TRANSP 8:8 20-SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 12ns
Supplier Device Package: 20-SSOP
Part Status: Obsolete
на замовлення 7238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 529+ | 38.41 грн |
| PMXB350UPEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
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Мінімальне замовлення: 5000 шт
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| PMXB350UPEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1.2A DFN1010D-3
Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: DFN1010D-3
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 4205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.37 грн |
| 21+ | 14.81 грн |
| 100+ | 7.33 грн |
| 500+ | 6.62 грн |
| 1000+ | 6.28 грн |
| PMXB43UNEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| PMXB43UNEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
Description: MOSFET N-CH 20V 3.2A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 551 pF @ 10 V
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| PMDXB950UPEL/S500Z |
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Виробник: Nexperia USA Inc.
Description: PMDXB950UPEL - 20 V, DUAL P-CHAN
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.025W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Description: PMDXB950UPEL - 20 V, DUAL P-CHAN
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.025W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3579+ | 6.34 грн |
| PMCXB900UEL/S500Z |
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 0.95V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.03W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 0.95V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, 1.4Ohm @ 500mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 265mW (Ta), 4.03W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Bulk
на замовлення 4300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4300+ | 6.75 грн |
| PMDXB290UNEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| PMDXB290UNEZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 0.93A 6DFN
Part Status: Active
Supplier Device Package: DFN1010B-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 3.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 280mW (Ta), 6W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 1607 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.72 грн |
| 15+ | 21.76 грн |
| 100+ | 10.98 грн |
| 500+ | 8.41 грн |
| 1000+ | 6.24 грн |
| BC817DPN |
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Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA BC817 - SMALL SIGNA
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz, 80MHz
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: NOW NEXPERIA BC817 - SMALL SIGNA
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz, 80MHz
Supplier Device Package: SOT-23-6L
Part Status: Active
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| 74LVC2G74GT,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
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Мінімальне замовлення: 5000 шт
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од. на суму грн.
| 74LVC2G74GT,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1-BIT 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON, SOT833-1 (1.95x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 2912 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.86 грн |
| 31+ | 10.00 грн |
| 35+ | 8.80 грн |
| 100+ | 7.07 грн |
| 250+ | 6.50 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.77 грн |
| 2500+ | 5.60 грн |
| 74LVC2G74GD,125 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (2x3)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (2x3)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 1
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| 74LVC2G74GN,115 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (1.2x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1BIT 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 32mA, 32mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 4 pF
Supplier Device Package: 8-XSON (1.2x1)
Max Propagation Delay @ V, Max CL: 4.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 1
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Мінімальне замовлення: 5000 шт
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| 74LVC1G175GN,132 |
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Виробник: Nexperia USA Inc.
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Supplier Device Package: 6-XSON (0.9x1)
Input Capacitance: 2.5 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 32mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 6-XFDFN
Packaging: Bulk
Description: IC FF D-TYPE SNGL 1BIT 6XSON
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Supplier Device Package: 6-XSON (0.9x1)
Input Capacitance: 2.5 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 32mA
Current - Quiescent (Iq): 40 µA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Type: D-Type
Function: Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Non-Inverted
Package / Case: 6-XFDFN
Packaging: Bulk
на замовлення 109850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2882+ | 7.56 грн |
| PTVS20VS1UR/8X |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
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| PTVS20VS1UR-QX |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BC817K-25R |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
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| BC817K-25R |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
Description: TRANS NPN 45V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Qualification: AEC-Q100
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.69 грн |
| 41+ | 7.48 грн |
| 100+ | 4.65 грн |
| BC857BQB-QZ |
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Виробник: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Qualification: AEC-Q101
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Qualification: AEC-Q101
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Мінімальне замовлення: 5000 шт
В кошику
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| PMDPB30XNZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
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Мінімальне замовлення: 3000 шт
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| PMDPB30XNZ |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4A 6HUSON
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 45.20 грн |
| 74HC573BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 15.06 грн |
| 6000+ | 14.11 грн |
| 9000+ | 13.92 грн |
| 15000+ | 12.86 грн |
| 74HC573BQ,115 |
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Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 14ns
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
на замовлення 21937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.10 грн |
| 14+ | 23.14 грн |
| 25+ | 20.71 грн |
| 100+ | 16.90 грн |
| 250+ | 15.69 грн |
| 500+ | 14.95 грн |
| 1000+ | 14.25 грн |
| BCX71K,235 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS PNP 45V 0.1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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| 74HCT86D/C5J |
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Виробник: Nexperia USA Inc.
Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.6V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE XOR 4CH 2-INP 14SO
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SO
Input Logic Level - High: 1.6V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 132500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1043+ | 19.70 грн |
| PZU5.1B3A-QX |
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Виробник: Nexperia USA Inc.
Description: PZU5.1B3A-Q/SOD323/SOD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
Description: PZU5.1B3A-Q/SOD323/SOD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PZU5.1B3A-QX |
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Виробник: Nexperia USA Inc.
Description: PZU5.1B3A-Q/SOD323/SOD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
Description: PZU5.1B3A-Q/SOD323/SOD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.26 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
на замовлення 1857 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.41 грн |
| 22+ | 14.13 грн |
| 100+ | 6.89 грн |
| 500+ | 5.39 грн |
| 1000+ | 3.75 грн |
| BZX384-C6V8-QX |
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Виробник: Nexperia USA Inc.
Description: BZX384-C6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: BZX384-C6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZX384-B6V8-QX |
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Виробник: Nexperia USA Inc.
Description: BZX384-B6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Description: BZX384-B6V8-Q/SOD323/SOD2
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74HCT4053D-Q100,11 |
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Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 3 120OHM 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Qualification: AEC-Q100
Description: IC SWITCH SPDT X 3 120OHM 16SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Part Status: Active
Number of Circuits: 3
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 499+ | 40.35 грн |
| 74HCT4053DB,118 |
![]() |
Виробник: Nexperia USA Inc.
Description: IC SWITCH SPDT X 3 120OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 3
Description: IC SWITCH SPDT X 3 120OHM 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 120Ohm
-3db Bandwidth: 170MHz
Supplier Device Package: 16-SSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 34ns, 31ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 3
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| GAN190-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN190-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
на замовлення 1393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 384.57 грн |
| 10+ | 246.94 грн |
| 100+ | 176.67 грн |
| 500+ | 149.09 грн |
| GAN140-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN140-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
на замовлення 2365 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 582.01 грн |
| 10+ | 381.55 грн |
| 100+ | 280.10 грн |
| 500+ | 258.83 грн |
| GAN190-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN190-650EBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
Description: 650 V, 190 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.9A, 6V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 12.2mA
Supplier Device Package: DFN8080-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 96 pF @ 400 V
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 416.29 грн |
| 10+ | 268.16 грн |
| 100+ | 192.79 грн |
| 500+ | 165.65 грн |
| GAN140-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| GAN140-650FBEZ |
![]() |
Виробник: Nexperia USA Inc.
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: 650 V, 140 MOHM GALLIUM NITRIDE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: DFN5060-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -1.4V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
на замовлення 1977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 537.61 грн |
| 10+ | 350.86 грн |
| 100+ | 256.33 грн |
| 500+ | 232.95 грн |
| PTVS9V0S1UTR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PTVS9V0S1UTR,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 185°C (TA)
Current - Peak Pulse (10/1000µs): 26A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 46.78 грн |
| 11+ | 27.87 грн |
| 50+ | 20.25 грн |
| 100+ | 16.67 грн |
| 74HC1G125GV-Q100H |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: SC-74A
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 6V SC74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: SC-74A
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74HC1G125GV-Q100H |
![]() |
Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 6V SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: SC-74A
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 6V SC74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: SC-74A
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 24+ | 13.48 грн |
| 37+ | 8.48 грн |
| 41+ | 7.45 грн |
| 100+ | 5.93 грн |
| 250+ | 5.44 грн |
| 500+ | 5.14 грн |
| BUK965R4-40E,118 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4483 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 442+ | 51.41 грн |
| PDTA124ET-QR |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PDTA124ET-QR |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| PDTA123YMB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 180 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| PDTA123YMB,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
на замовлення 8130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.82 грн |
| 27+ | 11.61 грн |
| 50+ | 8.28 грн |
| 100+ | 6.74 грн |
| PDTA123EU,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PDTA123EU,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
на замовлення 2924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 27+ | 11.89 грн |
| 46+ | 6.64 грн |
| 100+ | 4.11 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.45 грн |
| PDTA123YU,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PDTA123YU,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 2576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.52 грн |
| 56+ | 5.50 грн |
| 100+ | 3.37 грн |
| 500+ | 2.29 грн |
| 1000+ | 2.00 грн |
| PDTA123JMB,315 |
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на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11225+ | 2.27 грн |
| PDTA123TM,315 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V SOT883
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-883
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V SOT883
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: SOT-883
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
на замовлення 89950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11871+ | 2.27 грн |
| PDTA123TT,215 |
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Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 Only
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Qualification: AEC-Q100
Resistors Included: R1 Only
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74LVC126ADB,118 |
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Виробник: Nexperia USA Inc.
Description: IC BUFFER NON-INVERT 3.6V 14SSOP
Packaging: Bulk
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SSOP
Part Status: Active
Description: IC BUFFER NON-INVERT 3.6V 14SSOP
Packaging: Bulk
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SSOP
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2150+ | 10.58 грн |
| 74HCT20DB,118 |
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Виробник: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14SSOP
Packaging: Bulk
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 4
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 2CH 4-INP 14SSOP
Packaging: Bulk
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 4
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 610+ | 32.95 грн |
| 74HCT20DB,112 |
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Виробник: Nexperia USA Inc.
Description: IC GATE NAND 2CH 4-INP 14SSOP
Packaging: Tube
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 4
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE NAND 2CH 4-INP 14SSOP
Packaging: Tube
Package / Case: 14-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 4
Supplier Device Package: 14-SSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 28ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 2184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 548+ | 36.99 грн |
| 74LVC1G10GN,132 |
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на замовлення 189790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2882+ | 7.56 грн |
































